JP2006093527A - Reactant gas supply part - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device exchanging a reactant gas discharge part without opening a vacuum treatment chamber to the atmosphere in a semiconductor device. <P>SOLUTION: The vacuum treatment chamber 1 and a reactant gas supply part 6 are provided, and the reactant gas supply part 6 is constituted of a mixing part 2 and the reactant gas discharge part 3. Two or more sets of the reactant gas discharge parts 3 are stored in a vacuum chamber 16 connected to the vacuum treatment chamber 1. A carrying, fixing, holding and rotating mechanism for separating a used reactant gas discharge part 3 from the mixing part 2, then for recovering it and connecting a clean reactant gas discharge part 3 with the mixing part 2 inside the vacuum treatment chamber 1, is provided, and the reactant gas discharge part 3 is exchanged in a state of a vacuum degree of the vacuum treatment chamber 1 being maintained. Thus, a maintenance cycle is prolonged and the operation loss of the device is reduced. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a reactive gas supply unit of a vacuum processing apparatus.

  In a vacuum processing apparatus that performs semiconductor substrate processing, when a process process using a reactive gas is performed in a vacuum processing chamber, a reactive gas supply unit is installed in the vacuum processing chamber. In the case of an apparatus that performs an etching process and a film forming process, a reactive gas discharge unit is provided on the substrate surface side of the reactive gas supply unit, and the reactive gas is supplied to the substrate surface.

When the process is carried out continuously, the reaction product of the reaction gas adheres to the reaction gas discharge part and clogging occurs. In a film forming apparatus, in a process using an organic metal MOCVD apparatus, particularly an organic metal such as TMAl, TMGa, and DEZn, and an AsH ₃ gas, clogging is generated by the reaction generation section from the center of the reaction gas discharge section. However, the clogging increases concentrically with time. Due to the clogging of the reaction gas discharge portion, the gas flow of the reaction gas changes, and the Al composition distribution in the substrate surface after the film formation process becomes worse as the composition is closer to the center of the substrate stage.

In the conventional film forming process using the vacuum processing apparatus, the reaction gas discharge portion is clogged with the reaction product of the reaction gas. Thereby, the composition distribution in the substrate surface was deteriorated. As a countermeasure against this, there has been a method described in Patent Document 1 that enables the reaction gas discharge unit of the reaction gas supply unit to be detachable after the reaction gas supply unit is clogged, thereby facilitating maintenance of the reaction gas discharge unit. .
JP-A-6-188202

  However, the conventional countermeasures against the deterioration of the composition distribution in the substrate surface have the following problems.

  When exchanging the reaction gas discharge part, the vacuum processing chamber is opened to the atmosphere. After opening the vacuum process chamber to the atmosphere, reaction products installed in the vacuum processing chamber other than the reaction gas discharge part are attached. As a result, not only will the maintenance time be longer, but the quality of the product will not be improved until the vacuum processing chamber is opened to the atmosphere and the product substrate is processed again, as in MOCVD equipment. There are many confirmation processing items to guarantee, causing an operation loss of the apparatus.

  In order to solve the above-mentioned problems, the present invention accommodates a plurality of sets of reactive gas discharge units in a vacuum chamber connected to the vacuum processing chamber without opening the vacuum processing chamber to the atmosphere when replacing the reactive gas discharge unit. Then, by regularly replacing the vacuum processing chamber while maintaining the degree of vacuum in the vacuum processing chamber, a clean reaction gas discharge unit is always arranged in the reaction gas supply unit.

  This enables the maintenance cycle in the vacuum processing chamber to be extended by exchanging the reaction gas discharge section without opening the vacuum processing chamber to the atmosphere. Prevents deterioration of composition distribution in the substrate surface due to clogging. This provides stable quality of semiconductor products.

  In order to solve the conventional problems, the reactive gas supply unit of the present invention includes a vacuum processing chamber and a reactive gas supply unit, and the reactive gas supply unit includes a mixing unit and a reactive gas discharge unit. Multiple sets of reactive gas discharge units are housed in a vacuum chamber connected to the vacuum processing chamber, and the used reactive gas discharge unit is separated from the mixing unit and then recovered, and a clean reactive gas discharge unit is mixed in the vacuum processing chamber. The reaction gas discharge unit can be exchanged in a state where the vacuum processing chamber is maintained in a vacuum state, and includes a transporting, fixing, holding, and rotating mechanism for coupling with the unit.

  In addition, the vacuum chamber in which the reaction gas discharge unit is housed, when all of the reaction gas discharge unit is used, the vacuum chamber is opened in the atmospheric state with the vacuum degree of the vacuum processing chamber maintained, and a clean reaction gas is obtained. It is characterized by exchanging with the discharge part.

  As described above, according to the reactive gas supply unit of the vacuum processing apparatus for performing semiconductor substrate processing of the present invention, the reactive gas supply unit can be separated into the mixing unit and the reactive gas discharge unit, and the vacuum processing chamber And a vacuum chamber in which a plurality of sets of reaction gas discharge portions are stored in a storage shelf, and a mechanism for transporting the reaction gas discharge portions between the vacuum processing chamber and the vacuum chamber. The reaction gas discharge unit can be replaced while maintaining the degree of vacuum in the chamber, and a clean reaction gas discharge unit is installed in the vacuum processing chamber.

  As a result, it is possible to prevent deterioration of the composition distribution in the substrate surface caused by the clogging of the reaction gas discharge portion due to the reaction product of the reaction gas, and to provide a semiconductor product with stable quality.

  In addition, by increasing the number of stored reactive gas discharge units, it is possible to extend the maintenance cycle in the vacuum processing chamber, and to reduce the operation loss of the semiconductor manufacturing apparatus.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a diagram showing an outline of a reactive gas supply unit in an embodiment of the present invention. 2-4 is a figure which shows the exchange flow of the reactive gas discharge | release part in embodiment of this invention.

  As shown in FIG. 1, a reaction gas supply unit 6 is provided in the upper part of the vacuum processing chamber 1, and the reaction gas supply unit 6 includes a mixing unit 2 and a reaction gas discharge unit 3. The vacuum processing chamber 1 is fixed. Guide grooves are provided in the inner peripheral portion of the mixing portion 2 and the outer peripheral portion of the reaction gas discharge portion 3, and the mixing portion 2 is moved by moving the reaction gas discharge portion 3 in the vertical direction while rotating. The reaction gas discharge part 3 is separated and combined. In addition, the reactive gas discharge unit 3 is installed at a position facing the surface of the substrate 5 installed on the substrate stage 4.

  A vacuum chamber 16 is installed at a position connected to the vacuum processing chamber 1, and the space between the vacuum processing chamber 1 and the vacuum chamber 16 is shielded by the gate door 9. When the gate door 9 operates and is accommodated in the gate door accommodating portion 10, the vacuum processing chamber 1 and the vacuum chamber 16 are opened.

  In addition, a plurality of reactive gas discharge units 3 are stored in a storage shelf 17 in the vacuum chamber 16, and include a transfer arm driving unit 15, a transfer arm 14, a transfer arm rotating and expanding unit 13, a transfer arm chuck unit 12, a reaction. The reaction gas discharge unit 3 is replaced by the gas discharge unit chuck unit 11.

  In the vacuum processing chamber 1, when it was confirmed that the composition distribution was deteriorated as a result of measurement of the composition distribution in the substrate surface of the substrate 5 subjected to film formation, between the vacuum processing chamber 1 and the vacuum chamber 16, The shielding gate door 9 is driven and accommodated in the gate door accommodating portion 10, and the shielding between the vacuum processing chamber 1 and the vacuum chamber 16 is released (FIG. 2A).

  Next, the transfer arm driving unit 15 housed in the vacuum chamber 16 is driven, and the transfer arm 14, the transfer arm chuck unit 12, and the reactive gas discharge unit chuck unit 11 are supplied with the reactive gas in the vacuum processing chamber 1. The unit 6 is operated to the attachment / detachment position.

  Next, after the reaction gas discharge part chuck part 11 is moved to a horizontal position with respect to the chuck groove provided on the outer peripheral part of the reaction gas discharge part 3, the transfer arm chuck part 12 is operated inwardly to react. The gas discharge part 3 is held.

  Next, after the transfer arm chuck unit 12 holds the reaction gas release unit 3, the transfer arm rotation expansion / contraction unit 13 operates downward while rotating the transfer arm chuck unit 12 to release the mixing unit 2 and the reaction gas. The part 3 is separated (FIG. 2B).

  Next, the transfer arm chuck unit 12 holding the reaction gas release unit 3 is recovered in the vacuum chamber 16 by operating the transfer arm 14 and the transfer arm driving unit 15.

  Next, the used reactive gas discharge part 3 is stored in the storage shelf 17. At that time, the reaction gas discharge part chuck part 11 holding the used reaction gas discharge part 3 is operated outward to be separated from the reaction gas discharge part 3, and the reaction gas discharge part chuck part 11 and the transfer arm chuck part 12 are separated. Operates the transfer arm 14 and the transfer arm drive unit 15 to return to the origin position. A reaction gas discharge unit support base 18 is disposed on the bottom of the storage shelf 17 in order to prevent the reaction gas discharge unit 3 from falling off (FIG. 3C).

Next, the storage shelf expansion / contraction part 20 is operated, and the storage shelf 17 held by the storage shelf holding part 19 is moved downward to convey the position of the shelf in which the unused reaction gas discharge part 3 is stored. Stop at position.
Next, in order to take out the unused reaction gas discharge part 3 from the storage shelf 17, the transfer arm 14 and the transfer arm drive part 15 are operated, and the reaction gas discharge part chuck part 11 is moved to the outer periphery of the reaction gas discharge part 3. It is moved to a position horizontal to the chuck groove provided in the part. Thereafter, the transfer arm chuck unit 12 is operated inward, and the reaction gas discharge unit chuck unit 11 holds the unused reaction gas discharge unit 3 and holds the unused reaction gas discharge unit 3. The chuck unit 11 and the transfer arm chuck unit 12 are returned to the original position by operating the transfer arm 14 and the transfer arm driving unit 15. Thereafter, the storage shelf telescopic unit 20 moves up, and the storage shelf 17 moves to the standby position (FIG. 3D).

  Next, the transfer arm driving unit 15 housed in the vacuum chamber 16 is driven, and the transfer arm 14, the transfer arm chuck unit 12, and the reactive gas discharge unit chuck unit that holds the unused reaction gas discharge unit 3. 11 is operated to the attachment / detachment position of the reactive gas supply unit 6 in the vacuum processing chamber 1.

  Next, the transfer arm chuck unit 12 holding the unused reactive gas discharge unit 3 is operated upward while rotating the transfer arm chuck unit 12 by the transfer arm rotation expansion / contraction unit 13, and the mixing unit 2, The unused reaction gas discharge part 3 is combined.

  Next, the transfer arm chuck part 12 is operated to the outside, and the reaction gas discharge part chuck part 11 and the unused reaction gas discharge part 3 are separated (FIG. 4E).

  Next, the transfer arm 14 and the transfer arm drive unit 15 are operated to recover the transfer arm chuck unit 12 and the reactive gas discharge unit chuck unit 11 to the standby position in the vacuum chamber 16.

  Next, the gate door 9 that shields between the vacuum processing chamber 1 and the vacuum chamber 16 is actuated, and is lifted from the gate door housing 10 to shield between the vacuum processing chamber 1 and the vacuum chamber 16. After all the operations are completed, the process process can be started (FIG. 4 (f)). The same operation is repeated until the maintenance in the vacuum processing chamber 1 is performed. A valve between the vacuum chamber exhaust pipe 22 that exhausts the vacuum chamber 16 and the exhaust device 8 when all of the reactive gas discharge portions 3 stored in the storage shelf 17 become the used reactive gas discharge portions 3. 21 is shielded and the vacuum chamber 16 is opened to the atmosphere.

  Next, the used reaction gas discharge unit 3 in the storage shelf 17 is replaced with an unused reaction gas discharge unit 3 and installed in the storage shelf 17 in the vacuum chamber 16. Thereafter, the valve 21 is opened and the vacuum chamber 16 is brought into a vacuum state.

  In the present embodiment, the vacuum processing chamber 1 and the vacuum chamber 16 have been described using the same exhaust device 8, but it goes without saying that the same effect can be obtained even if individual exhaust devices are used.

  In the embodiment, the number of storage shelves 17 is two, but it goes without saying that the same effect can be obtained by using two or more mixing units.

  In the embodiment, the method of coupling and separating the mixing unit 2 and the reactive gas discharge unit 3 has been described by using the method of rotating in the vertical direction along the guide groove. It goes without saying that the same effect can be obtained even if a cylinder chuck system or a lock system is used.

  In the embodiment, the reaction gas supply unit 6 is installed in the upper part of the vacuum processing chamber 1 and the storage shelf 17 is installed in the upper part of the vacuum chamber 16. It goes without saying that the same effect can be obtained by using the face-down method of the substrate 5 in which the gas supply unit 6 is installed in the lower part of the vacuum processing chamber 1 and the storage shelf 17 is installed in the lower part of the vacuum chamber 16.

  In the embodiment, a description has been given using an apparatus in which a plurality of substrates 5 are installed on the substrate stage 4. However, it goes without saying that the same effect can be obtained even in an apparatus having a single substrate 5.

  In the embodiment, the vacuum processing chamber 1 is described using an apparatus having a single configuration, but it goes without saying that the same effect can be obtained even in an apparatus having a plurality of vacuum processing chambers 1.

  Note that although the film formation processing apparatus is described in the embodiment, it goes without saying that the same effect can be obtained in all the processing apparatuses having a gas supply unit in the vacuum processing chamber.

  The reaction gas supply unit of the vacuum processing apparatus for performing the semiconductor substrate processing of the present invention can separate the reaction gas supply unit into the mixing unit and the reaction gas discharge unit, and the reaction gas supply unit is connected to the vacuum processing chamber at a position connected thereto. By having a vacuum chamber in which multiple sets of gas discharge units are stored in a storage shelf and having a mechanism for transporting the reaction gas discharge unit between the vacuum processing chamber and the vacuum chamber, the degree of vacuum of the vacuum processing chamber is maintained. In this state, the reaction gas discharge part can be replaced, and a clean reaction gas discharge part is installed in the vacuum processing chamber. This is useful as a method for preventing deterioration of the composition distribution in the substrate surface due to clogging of the reaction gas discharge portion due to the reaction product of the reaction gas.

  Further, by increasing the number of stored reactive gas discharge units, it is possible to extend the maintenance cycle in the vacuum processing chamber, which is also useful as a method for reducing the operating loss of the semiconductor manufacturing apparatus.

The figure which shows the outline of the reactive gas supply part in embodiment of this invention The figure which shows the exchange flow of the reactive gas discharge | release part in embodiment of this invention The figure which shows the exchange flow of the reactive gas discharge | release part in embodiment of this invention The figure which shows the exchange flow of the reactive gas discharge | release part in embodiment of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum processing chamber 2 Mixing part 3 Reaction gas discharge | emission part 4 Substrate stage 5 Substrate 6 Reaction gas supply part 8 Exhaust device 9 Gate door 10 Gate door storage part 11 Reaction gas discharge part chuck | zipper part 12 Transfer arm chuck | zipper part 13 Transfer arm rotation expansion / contraction part 14 Transfer arm 15 Transfer arm drive unit 16 Vacuum chamber 17 Storage shelf 18 Reactive gas discharge unit support base 19 Storage shelf holding unit 20 Storage shelf expansion / contraction unit 21 Valve 22 Vacuum chamber exhaust piping

Claims (5)

A vacuum processing chamber;
A reaction gas supply unit configured to supply a reaction gas provided in the vacuum processing chamber to a substrate surface installed on a substrate stage in the reaction chamber;
The reactive gas supply unit includes a mixing unit and a reactive gas discharge unit,
The mixing unit is fixed in the vacuum processing chamber,
The reactive gas discharge portion is coupled to the mixing portion at a position where the gas discharge surface faces the upper surface of the substrate.
A storage shelf for storing a plurality of sets of the reaction gas discharge portions;
The storage shelf is installed in a vacuum chamber connected to the vacuum processing chamber,
The vacuum chamber has a means to be cut off from the vacuum processing chamber,
Means for separating the reactive gas discharge portion from the mixing portion;
Means for taking out one set of the reaction gas discharge portions from the plurality of storage shelves;
Means for coupling the extracted set of reactive gas discharge portions with the mixing portion;
Means for transporting the reactive gas discharge portion between the vacuum processing chamber and the vacuum chamber;
The reactive gas supply unit, wherein the reactive gas discharge unit can be replaced while maintaining a vacuum degree in the vacuum processing chamber. The mixing part and the reactive gas discharge part have guide grooves on an inner peripheral part of the mixing part and an outer peripheral part of the reactive gas discharge part, and are rotated, separated and coupled in the vertical direction along the guide groove. The reaction gas supply unit according to claim 1. The transport arm for transporting the reactive gas discharge unit includes a mechanism for operating and holding the reactive gas discharge unit to the left and right, and a mechanism for moving up and down while rotating. The reactive gas supply unit according to 1. The reactive gas supply unit according to claim 1, wherein the storage shelf extends and contracts vertically. The storage shelf in which a plurality of sets of the reaction gas discharge units in the vacuum chamber are stored can maintain the degree of vacuum of the vacuum processing chamber when replacing the used reaction gas discharge unit in the storage shelf. The reactive gas supply unit according to 1, 2, 3, or 4.

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