JP2005101625A - Vacuum processing device and transportation method of substrate - Google Patents

Vacuum processing device and transportation method of substrate Download PDF

Info

Publication number
JP2005101625A
JP2005101625A JP2004302409A JP2004302409A JP2005101625A JP 2005101625 A JP2005101625 A JP 2005101625A JP 2004302409 A JP2004302409 A JP 2004302409A JP 2004302409 A JP2004302409 A JP 2004302409A JP 2005101625 A JP2005101625 A JP 2005101625A
Authority
JP
Japan
Prior art keywords
substrate
cassette
processed
chamber
vacuum processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004302409A
Other languages
Japanese (ja)
Inventor
Shigekazu Kato
重和 加藤
Koji Nishihata
廣治 西畑
Tsunehiko Tsubone
恒彦 坪根
Atsushi Ito
温司 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2004302409A priority Critical patent/JP2005101625A/en
Publication of JP2005101625A publication Critical patent/JP2005101625A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide vacuum processing and a vacuum processing method that realize a high production efficiency. <P>SOLUTION: The vacuum processing device comprises: a cassette stage 2 which keeps a substrate in a cassette 1 to be placed in a horizontal state; a first transportation device 13 arranged to access a plurality of cassettes 1 on the cassette stage 2 and a substrate receiving chamber 5 or a substrate taking-out chamber 6; a transportation chamber 16 configured for connection to a plurality of peripheral vacuum process chambers 11 along with the substrate receiving chamber 5 and the substrate taking-out chamber 6; and a second transportation device arranged to access all of the substrate receiving chamber 5 and the substrate taking-out chamber 6 provided in the transportation chamber 16, and of the plurality of vacuum process chambers 11. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、真空処理装置に係り、特に複数の真空処理室を有する真空処理装置用搬送システムに関するものである。   The present invention relates to a vacuum processing apparatus, and more particularly to a transfer system for a vacuum processing apparatus having a plurality of vacuum processing chambers.

ドライエッチング装置、CVD装置あるいはスパッタリング装置などの真空処理装置においては、定められた複数枚の被処理基板を一つの単位(一般にロットとよばれる)として基板カセットに収納して装置に投入し、処理済みの基板も同一の単位毎に基板カセットに収容して回収することにより、生産の効率化を図るのが一般的な真空処理装置である。   In a vacuum processing apparatus such as a dry etching apparatus, a CVD apparatus or a sputtering apparatus, a plurality of predetermined substrates to be processed are stored as a unit (generally called a lot) in a substrate cassette and put into the apparatus for processing. It is a common vacuum processing apparatus to improve the production efficiency by storing the collected substrates in the same unit and collecting them in the substrate cassette.

しかしながら、上記のような真空処理装置、特にドライエッチング装置、CVD装置など活性ガスによる反応を利用する装置においては、処理を行うに従って反応生成物が処理容器内に付着、堆積するために、真空性能の劣化、ゴミの増加、光学モニタ信号のレベル低下などの問題が生じることがしばしばあり、これを避けるために定期的に処理容器内をクリーニングする作業が行われている。クリーニング作業には、有機溶剤等によって付着物を拭き取る、所謂ウェットクリーニングと、付着物を分解する活性ガスやプラズマを利用するドライクリーニングとがあるが、作業性や効率面からはドライクリーニングが優れており、こうした機能は生産ラインの自動化が進むにつれて不可欠なものとなりつつある。   However, in vacuum processing apparatuses such as those described above, particularly dry etching apparatuses and CVD apparatuses that use a reaction by an active gas, the reaction product adheres and accumulates in the processing container as the processing is performed, so that the vacuum performance In many cases, problems such as deterioration of dust, increase in dust, and decrease in the level of the optical monitor signal occur, and in order to avoid such problems, work for periodically cleaning the inside of the processing container is performed. Cleaning operations include so-called wet cleaning that wipes off deposits with an organic solvent, etc., and dry cleaning that uses active gas or plasma that decomposes deposits. However, dry cleaning is superior in terms of workability and efficiency. These functions are becoming indispensable as production lines become more automated.

このような機能を備えた真空処理装置の一例として、特許文献1に開示された装置などがあげられる。   An example of a vacuum processing apparatus having such a function is an apparatus disclosed in Patent Document 1.

実開昭63−127125号公報Japanese Utility Model Publication No. 63-127125

例えば、特許文献1に開示された装置においては、処理室をプラズマクリーニングするにあたってあらかじめ真空予備室に収容されたダミーウェーハを処理室内に搬入し、プラズマクリーニングが終了したら搬送手段によってダミーウェーハを真空予備室に戻すようになされている。このため、ダミーウェーハを収容する真空予備室は、大きな容積を必要とするとともにダミーウェーハ専用の搬送機構を必要とし、装置が複雑化するという問題があった。   For example, in the apparatus disclosed in Patent Document 1, a dummy wafer previously accommodated in a vacuum preparatory chamber is carried into the processing chamber when performing plasma cleaning on the processing chamber. It is made to return to the room. For this reason, the vacuum preliminary chamber for accommodating the dummy wafer requires a large volume and requires a transport mechanism dedicated to the dummy wafer, which causes a problem that the apparatus becomes complicated.

また、一旦、プラズマクリーニングに使用されたダミーウェーハが、再び真空予備室に戻された後に正規の処理を続行するため、真空予備室内では使用済みのダミーウェーハとこれから正規の処理を受けようとする未処理のウェーハとが混在することとなり、製品汚染の観点から好ましくない。   Further, once the dummy wafer used for the plasma cleaning is returned to the vacuum preliminary chamber again, the normal process is continued. Therefore, the used dummy wafer and the normal process are to be received in the vacuum preliminary chamber. Unprocessed wafers are mixed, which is not preferable from the viewpoint of product contamination.

本発明の目的は、上記の問題点を解決し、ゴミの発生や残留ガスなどによる製品の汚染をなくし、高い生産効率と高い製品歩留まりを実現する真空処理装置用搬送システムを提供することにある。   An object of the present invention is to provide a transport system for a vacuum processing apparatus that solves the above-described problems, eliminates product contamination due to generation of dust and residual gas, and realizes high production efficiency and high product yield. .

本発明は、上記目的を達成するために、被処理基板を一枚毎水平状態で真空処理する複数の真空処理室に連結され、該真空処理室との間に各室を夫々分離する隔離弁を有する1つの室からなる搬送室と、被処理基板、処理済基板もしくはダミー処理済基板を複数枚収納できる複数のカセットを大気中で載置する複数のカセット台と、前記搬送室に連結され,該搬送室を介していずれかの真空処理室との間で前記基板を搬入するためのロードロック室及び前記搬送室を介していずれかの真空処理室との間で前記基板を搬出するためのアンロードロック室と、前記大気中のカセットと前記ロードロック室及び前記アンロードロック室の双方の室との間で前記基板を一枚毎搬送する大気搬送装置と、前記ロードロック室及び前記アンロードロック室の大気側及び真空側にそれぞれ設けられ、該ロードロック室及び前記アンロードロック室を大気雰囲気もしくは真空雰囲気に切り替えるために前記を搬入出する毎に開閉される隔離弁とを備えたことに特徴がある。   In order to achieve the above object, the present invention provides an isolation valve that is connected to a plurality of vacuum processing chambers for vacuum processing each substrate to be processed in a horizontal state and separates each chamber from the vacuum processing chamber. A transfer chamber comprising a single chamber, a plurality of cassette tables for mounting a plurality of cassettes capable of storing a plurality of substrates to be processed, processed substrates or dummy processed substrates in the atmosphere, and connected to the transfer chamber. In order to carry out the substrate between the load lock chamber for carrying the substrate into and out of any vacuum processing chamber through the transfer chamber and the vacuum processing chamber through the transfer chamber. An unload-lock chamber, an atmospheric transfer device that transfers the substrates one by one between the cassette in the atmosphere and both the load-lock chamber and the unload-lock chamber, the load-lock chamber, and the load-lock chamber Unload lock room An isolation valve is provided on each of the atmosphere side and the vacuum side, and is opened and closed each time the load lock chamber and the unload lock chamber are switched to the atmospheric atmosphere or the vacuum atmosphere each time they are loaded and unloaded. is there.

本発明によれば、いずれかの真空処理室へ被処理基板を搬出するためのロードロック室と、いずれかの真空処理室から前記搬送室を介して前記処理済基板を搬入するとともに前記大気中のカセットへ前記処理済基板を搬出するためのアンロードロック室がありこのロードロック室及びアンロードロック室を大気雰囲気もしくは真空雰囲気に切り替えるために被処理基板もしくは処理済基板を搬入出する毎に開閉される隔離弁とが設けられている。そして、大気雰囲気の前記ロードロック室及びアンロードロツク室と大気中のカセットとの間で、被処理基板もしくは処理済基板を一枚毎搬入出するとともに、真空雰囲気のロードロック室及びアンロードロック室といずれかの真空処理室との間で、被処理基板もしくは処理済基板を一枚毎搬入出する。   According to the present invention, a load lock chamber for unloading a substrate to be processed into any one of the vacuum processing chambers, and the processed substrate from the vacuum processing chamber via the transfer chamber and the atmosphere. There is an unload lock chamber for unloading the processed substrate to a cassette of the machine every time a substrate to be processed or a processed substrate is loaded / unloaded in order to switch the load lock chamber and the unload lock chamber to an air atmosphere or a vacuum atmosphere. An isolation valve that is opened and closed is provided. Then, the substrate to be processed or the processed substrate is loaded and unloaded one by one between the load lock chamber and the unload lock chamber in the atmospheric atmosphere and the cassette in the atmosphere, and the load lock chamber and the unload lock in the vacuum atmosphere. A substrate to be processed or a processed substrate is loaded and unloaded one by one between the chamber and one of the vacuum processing chambers.

そのため、基板の搬入出に伴い真空処理室とロードロック室またはアンロードロック室が導通状態になっている時間は短い。従って、処理済基板に付着したゴミや残留ガスのロードロック室及びアンロードロック室に持ち込まれる量が少なくなり、ゴミの発生や残留ガスなどによる製品の汚染をなくし、高い生産効率と高い製品歩留まりを実現する真空処理装置用搬送システムを提供することができる。   Therefore, the time during which the vacuum processing chamber and the load lock chamber or the unload lock chamber are in a conductive state with the loading / unloading of the substrate is short. Therefore, the amount of dust and residual gas adhering to the processed substrate brought into the load lock chamber and unload lock chamber is reduced, eliminating the generation of dust and product contamination due to residual gas, etc., and high production efficiency and high product yield. It is possible to provide a transfer system for a vacuum processing apparatus that realizes the above.

本発明によれば、ゴミの発生や残留ガスなどによる製品の汚染をなくし、高い生産効率と高い製品歩留まりを実現する真空処理装置用搬送システムを提供することができるという効果が有る。   Advantageous Effects of Invention According to the present invention, there is an effect that it is possible to provide a transfer system for a vacuum processing apparatus that eliminates the generation of dust and product contamination due to residual gas and realizes high production efficiency and high product yield.

以下、本発明の一実施例を図1により説明する。
図1は、本発明による真空処理装置の、半導体ウェーハに対するドライエッチング処理を行う装置への応用を示す図である。
An embodiment of the present invention will be described below with reference to FIG.
FIG. 1 is a diagram showing an application of a vacuum processing apparatus according to the present invention to an apparatus for performing a dry etching process on a semiconductor wafer.

装置は、未処理のウェーハ(基板)を収納した状態で、装置に処理対象を供給し、かつ処理済みのウェーハ(基板)を再度元の位置に収納して回収するための、複数(通常25枚)のウェーハ(基板)を収納できる複数のカセット1a、1bおよび1c、該カセット1a、1b、1cを載置し、装置への導入/払出しの位置を決定するための、位置及び姿勢を変えることがなく、水平又は水平に近い平面の上に常に一定位置に固定されたカセット台2a、2b、2c、図示しない真空排気装置及びガス導入装置を装備し、ウェーハを真空雰囲気に導入するためのロードロック室(基板受入室)5、同じくウェーハを大気中に取りだすためのアンロードロック室(基板取出室)6、ウェーハにエッチング処理を施すためのエッチング11、それらをそれぞれ気密に分離可能な隔離弁12、及びロードロック室(基板受入室)5/アンロードロック室(基板取出室)6とカセット1a、1b、1cとの間に配置され、X、Y、Z及びθ軸を有するロボットを備えた、ロードロック室(基板受入室)5/アンロードロック室(基板取出室)6とカセット1a、1b、1cとの間でウェーハ(基板)を授受するための第1搬送装置13から構成されている。   The apparatus supplies a processing target to the apparatus in a state where unprocessed wafers (substrates) are stored, and stores a plurality of (normally 25) wafers (substrates) for storing and recovering processed wafers (substrates) in their original positions again. A plurality of cassettes 1a, 1b, and 1c capable of storing a plurality of wafers (substrates), the cassettes 1a, 1b, and 1c are placed, and the positions and postures for determining the positions of introduction / discharge to the apparatus are changed. Equipped with cassette bases 2a, 2b, 2c, a vacuum exhaust device and a gas introduction device (not shown) that are always fixed at a fixed position on a horizontal or nearly horizontal plane, and for introducing a wafer into a vacuum atmosphere A load lock chamber (substrate receiving chamber) 5, an unload lock chamber (substrate extracting chamber) 6 for taking out the wafer into the atmosphere, an etching 11 for etching the wafer, Are arranged between the cassettes 1a, 1b and 1c, and the isolation valve 12 which can be hermetically separated and the load lock chamber (substrate receiving chamber) 5 / unload lock chamber (substrate take-out chamber) 6 and the cassettes 1a, 1b and 1c, respectively. For transferring wafers (substrates) between the load lock chamber (substrate receiving chamber) 5 / unload lock chamber (substrate taking-out chamber) 6 and the cassettes 1a, 1b, 1c having a robot having Z and θ axes. The 1st conveyance apparatus 13 is comprised.

装置の動作としては、まず、未処理のウェーハ(基板)を収納したカセット1a、1bがストッカ(図示省略)から装置へとロボット又はオペレータにより供給され、カセット台2a、2bに載置される。この時カセット台2a、2bは水平な同一平面上にあるため、カセットの供給動作を単純化することが可能であり、生産ラインの自動化への対応が容易である。一方、カセット台2cには、ダミーウェーハを収納したカセット1cが載置される。   As an operation of the apparatus, first, cassettes 1a and 1b containing unprocessed wafers (substrates) are supplied from a stocker (not shown) to the apparatus by a robot or an operator and placed on cassette stands 2a and 2b. At this time, since the cassette stands 2a and 2b are on the same horizontal plane, the cassette supply operation can be simplified, and it is easy to cope with automation of the production line. On the other hand, a cassette 1c storing dummy wafers is placed on the cassette table 2c.

装置は、カセットに付与された生産情報を自ら認識するか、上位の制御装置から送られる情報に基づくか、あるいはオペレータの入力する命令によるか、いずれかの方法によりウェーハに処理を行うことができる。   The device can process the wafer by either recognizing the production information given to the cassette itself, based on information sent from the host control device, or by a command input by the operator. .

カセット1aに収納された未処理のウェーハ(基板)20を第1搬送装置13により抜き取り、第1搬送装置13に対してカセット1aとは反対側に配置されたロードロック室(基板受入室)5へ隔離弁12aを通して搬入する。このときウェーハ(基板)20は、カセット1a内のいずれの場所に収納されたものでも良い。ウェーハ(基板)20は、隔離弁12aからロードロック室(基板受入室)5に入った後、隔離弁12bからアンロードロック室(基板取出室)6を出るまで、装置外部の雰囲気とは完全に遮断された状態にあるので、隔離弁12a、12bを境にして仕切りを設け、カセット台2a、2bとそこに載置されたカセット1a、1b及び第1搬送装置13のみを清浄度の高いクリーンルーム側に置き、残りの部分は清浄度の低いメインテナンスルーム側に置くことができる。ロードロック室(基板受入室)5は、隔離弁12aを閉じた後、排気装置(図示省略)によって所定の圧力まで真空排気され、次いで、隔離弁12bが開放されてウェーハ(基板)20は、搬送室16に設置された真空搬送装置(図示省略)によりエッチング室11(11a,11b,11c)へ搬送され、試料台8(8a,8b,8c)上に載置される。   An unprocessed wafer (substrate) 20 stored in the cassette 1a is extracted by the first transfer device 13, and a load lock chamber (substrate receiving chamber) 5 disposed on the opposite side of the cassette 1a with respect to the first transfer device 13. It carries in through the isolation valve 12a. At this time, the wafer (substrate) 20 may be stored in any location in the cassette 1a. After the wafer (substrate) 20 enters the load lock chamber (substrate receiving chamber) 5 from the isolation valve 12a and then exits from the isolation valve 12b to the unload lock chamber (substrate take-out chamber) 6, the atmosphere outside the apparatus is completely Therefore, a partition is provided with the isolation valves 12a and 12b as a boundary, and only the cassette bases 2a and 2b, and the cassettes 1a and 1b and the first transport device 13 placed thereon are highly clean. It can be placed on the clean room side, and the rest can be placed on the maintenance room side where the cleanliness is low. After the isolation valve 12a is closed, the load lock chamber (substrate receiving chamber) 5 is evacuated to a predetermined pressure by an exhaust device (not shown), then the isolation valve 12b is opened and the wafer (substrate) 20 is The sample is transferred to the etching chamber 11 (11a, 11b, 11c) by a vacuum transfer device (not shown) installed in the transfer chamber 16, and placed on the sample stage 8 (8a, 8b, 8c).

エッチング室11に搬入されたウェーハ(基板)20は、所定の条件によりエッチング処理を施される。この間に、ロードロック室(基板受入室)5は隔離弁12a、12bを閉じた状態で、ガス導入装置4により大気圧に復帰され、開放された隔離弁12aから1枚目のウェーハと同様に2枚目のウェーハ(基板)が第1搬送装置13によって搬入され、再び排気装置によって所定の圧力まで真空排気される。1枚目のウェーハ20のエッチング処理が終了すると、隔離弁12cが開かれて処理済みのウェーハ(基板)20がアンロードロック室(基板取出室)6に搬出され、続いて隔離弁12cが閉じられ、隔離弁12bが開かれて2枚目のウェーハ(基板)がロードロック室(基板受入室)5から搬入され、隔離弁12bを閉じた後エッチング処理が開始される。   The wafer (substrate) 20 carried into the etching chamber 11 is subjected to an etching process under predetermined conditions. During this time, the load lock chamber (substrate receiving chamber) 5 is returned to the atmospheric pressure by the gas introducing device 4 with the isolation valves 12a and 12b closed, and is similar to the first wafer from the opened isolation valve 12a. A second wafer (substrate) is carried in by the first transfer device 13 and again evacuated to a predetermined pressure by the exhaust device. When the etching process of the first wafer 20 is completed, the isolation valve 12c is opened, the processed wafer (substrate) 20 is carried out to the unload lock chamber (substrate extraction chamber) 6, and then the isolation valve 12c is closed. Then, the isolation valve 12b is opened, a second wafer (substrate) is loaded from the load lock chamber (substrate receiving chamber) 5, and after the isolation valve 12b is closed, the etching process is started.

アンロードロック室(基板取出室)6に搬出された処理済みウェーハ(基板)20は、アンロードロック室(基板取出室)6を大気圧に復帰した後、隔離弁12dを通して第1搬送装置13によって大気中に取りだされ、当初収納されていたカセット1a内の元の位置へ戻される。   The processed wafer (substrate) 20 carried out to the unload lock chamber (substrate take-out chamber) 6 returns the unload lock chamber (substrate take-out chamber) 6 to the atmospheric pressure, and then passes through the first transfer device 13 through the isolation valve 12d. Is taken out into the atmosphere and returned to the original position in the cassette 1a originally stored.

以上の動作を繰り返して、カセット1aに収納されていた未処理ウェーハの処理が完了し、元の位置に再収納し終わるとカセット1aは回収可能となり、別の未処理のウェーハを収納したカセットと交換されるが、装置はその間カセット1b内の未処理ウェーハの処理を続けており、カセット1bの全てのウェーハの処理が完了する前に別の未処理のウェーハを収納したカセットが供給されれば、装置は常に連続的に稼働可能である。この時カセット1a、カセット1bは水平な同一平面上にあるため、カセット1aの回収作業及び別の未処理のウェーハを収納したカセットの供給作業を、第1搬送装置13によるカセット1bへのアクセスに影響を与えることなく行うことができる。   By repeating the above operation, the processing of the unprocessed wafer stored in the cassette 1a is completed, and when the storage of the unprocessed wafer in the original position is completed, the cassette 1a can be recovered, and a cassette storing another unprocessed wafer In the meantime, the apparatus continues to process the unprocessed wafers in the cassette 1b, and if a cassette containing another unprocessed wafer is supplied before the processing of all the wafers in the cassette 1b is completed. The device can always be operated continuously. At this time, since the cassette 1a and the cassette 1b are on the same horizontal plane, the collection operation of the cassette 1a and the supply operation of the cassette containing another unprocessed wafer can be accessed by the first transfer device 13 to the cassette 1b. It can be done without any effect.

エッチング室11は、処理を重ねるにつれて反応生成物が内壁面に付着、堆積してくるためにプラズマクリーニングによって付着物を除去し、元の状態に復旧してやる必要があるが、プラズマクリーニングの実施に当っては、カセット1cに収納されたダミーウェーハ30を第1搬送装置13によって抜取り、以降は前記被処理ウェーハ20の場合と全く同様にして処理を行った後、ダミーウェーハ30をカセット1c内の元の位置に戻すことができ、ダミーウェーハ30は常にカセット1c内にストックされていることになる。尚、カセット1cのダミーウェーハ30が全てプラズマクリーニングで使用された場合や、数回の使用により使用不良となった場合、ダミーウェーハ30はカセット1cごと全て交換される。   In the etching chamber 11, the reaction product adheres to and accumulates on the inner wall surface as the processing is repeated. Therefore, it is necessary to remove the adhered material by plasma cleaning and restore the original state. After that, the dummy wafer 30 stored in the cassette 1c is extracted by the first transfer device 13, and thereafter the processing is performed in the same manner as in the case of the processing target wafer 20, and then the dummy wafer 30 is stored in the cassette 1c. The dummy wafer 30 is always stocked in the cassette 1c. When all the dummy wafers 30 in the cassette 1c are used for plasma cleaning, or when the use becomes defective due to several uses, the entire dummy wafer 30 is replaced.

従って、プラズマクリーニングを特別な処理シーケンスとして扱う必要は無く、通常のエッチング処理の中に組み込んで一連の作業として行うことができ、クリーニングを実施する周期も任意に設定することが可能である。装置のハードウェア上からもプラズマクリーニングの為の専用の機構は必要が無く、複数のカセット台の一つ(本例の場合2c)にダミーウェーハ30を収納したカセット(本例の場合1c)を設置するだけで良く、プラズマクリーニングの必要が無い用途の場合には、ダミーウェーハ30を収納したカセットの代わりに、被処理ウェーハ(基板)20を収納したカセットを設置することにより、より効率良く生産を行うことができることは説明するまでもない。   Accordingly, it is not necessary to treat plasma cleaning as a special processing sequence, and it can be incorporated into a normal etching process and performed as a series of operations, and the period for performing cleaning can be arbitrarily set. There is no need for a dedicated mechanism for plasma cleaning from the hardware of the apparatus, and a cassette (1c in this example) containing a dummy wafer 30 is stored in one of a plurality of cassette stands (2c in this example). For applications that do not require plasma cleaning, it is possible to produce more efficiently by installing a cassette containing a wafer (substrate) 20 to be processed instead of a cassette containing a dummy wafer 30. Needless to say that can be done.

また、一旦プラズマクリーニングに使用されたダミーウェーハは、再び大気中の元のカセットに戻るようになされているので、真空室内では使用済みのダミーウェーハとこれから正規の処理を受けようとする未処理のウェーハとが混在することがなく、製品の汚染の心配も無い。   In addition, since the dummy wafer once used for plasma cleaning is returned to the original cassette in the atmosphere again, the used dummy wafer in the vacuum chamber and the unprocessed one that is going to receive regular processing from now on. There is no mixing with wafers, and there is no worry of product contamination.

本発明の一実施例のドライエッチング装置の平面図である。It is a top view of the dry etching apparatus of one Example of this invention.

符号の説明Explanation of symbols

1…基板カセット、2…カセット台、5…ロードロック室(基板受入室)、6…アンロードロック室(基板取出室)、
8…試料台、11…エッチング室、12…隔離弁、13…第1搬送装置、16…搬送室、20…ウェーハ(基板)、30…ダミーウェーハ。
DESCRIPTION OF SYMBOLS 1 ... Substrate cassette, 2 ... Cassette stand, 5 ... Load lock chamber (substrate reception chamber), 6 ... Unload lock chamber (substrate extraction chamber),
DESCRIPTION OF SYMBOLS 8 ... Sample stand, 11 ... Etching chamber, 12 ... Isolation valve, 13 ... 1st transfer apparatus, 16 ... Transfer chamber, 20 ... Wafer (substrate), 30 ... Dummy wafer.

Claims (2)

被処理基板を真空処理する複数の真空処理室と、
被処理基板もしくは処理済基板を複数枚収納できるカセットを大気雰囲気で載置し得る実質的に水平な同一高さ面に配置された複数のカセット台と、
前記複数のカセット台のいずれかのカセット内のいずれの場所からも前記被処理基板を抜き取れるよう上下動可能に構成された大気搬送手段と、
前記複数のカセット台のいずれかのカセット内のいずれの場所からも前記被処理基板を一枚毎抜き取り前記いずれかの真空処理室へ搬入し、前記真空処理室で前記被処理基板を一枚毎処理し、前記処理された処理済基板を元のカセットの元の位置に一枚毎回収するように制御する制御手段、とを具備することを特徴とする真空処理装置。
A plurality of vacuum processing chambers for vacuum processing the substrate to be processed;
A plurality of cassette bases arranged on the same level surface that can be placed in the atmosphere, a cassette that can store a plurality of substrates to be processed or processed substrates; and
Atmospheric transfer means configured to be vertically movable so that the substrate to be processed can be removed from any location in any of the cassettes of the plurality of cassette stands;
The substrates to be processed are extracted one by one from any location in any of the cassettes of the plurality of cassette stands and loaded into one of the vacuum processing chambers, and the substrates to be processed are one by one in the vacuum processing chamber. And a control means for controlling the processed substrates so that the processed substrates are collected one by one at the original position of the original cassette.
被処理基板を真空処理する複数の真空処理室と、被処理基板もしくは処理済基板を複数枚収納できるカセットを大気雰囲気で載置し得る実質的に水平な同一高さ面に配置された複数のカセット台と、前記複数のカセット台のいずれかのカセット内のいずれの場所からも前記被処理基板を抜き取れるよう上下動可能に構成された大気搬送手段とを備えた真空処理装置における基板の搬送処理方法であって、
前記大気搬送手段の上下動作により、前記複数のカセット台のいずれかのカセット内のいずれの場所からも前記被処理基板を一枚毎抜き取り、
該被処理基板を、前記いずれかの真空処理室へ搬入し、
前記真空処理室で前記被処理基板を一枚毎処理し、
前記処理された処理済基板を、大気雰囲気に搬出し、元のカセットの元の位置に一枚毎回収することを特徴とする基板の搬送処理方法。
A plurality of vacuum processing chambers for vacuum processing a substrate to be processed and a plurality of substrates disposed on substantially the same level surface that can be placed in an atmospheric atmosphere with a cassette that can store a plurality of substrates to be processed or processed substrates. Substrate transport in a vacuum processing apparatus comprising a cassette table and atmospheric transfer means configured to be movable up and down so that the substrate to be processed can be extracted from any location in any of the plurality of cassette tables. A processing method,
By the vertical movement of the atmospheric transfer means, the substrate to be processed is extracted one by one from any location in any cassette of the plurality of cassette stands,
The substrate to be processed is carried into one of the vacuum processing chambers,
Processing each substrate to be processed in the vacuum processing chamber;
A substrate transfer processing method, wherein the processed substrates that have been processed are carried out to an air atmosphere and collected one by one at the original position of the original cassette.
JP2004302409A 2004-10-18 2004-10-18 Vacuum processing device and transportation method of substrate Pending JP2005101625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004302409A JP2005101625A (en) 2004-10-18 2004-10-18 Vacuum processing device and transportation method of substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004302409A JP2005101625A (en) 2004-10-18 2004-10-18 Vacuum processing device and transportation method of substrate

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004043758A Division JP3628683B2 (en) 2004-02-20 2004-02-20 Vacuum processing apparatus and substrate transfer processing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005135694A Division JP2005260274A (en) 2005-05-09 2005-05-09 Vacuum processing apparatus and transfer processing method of substrate

Publications (1)

Publication Number Publication Date
JP2005101625A true JP2005101625A (en) 2005-04-14

Family

ID=34464184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004302409A Pending JP2005101625A (en) 2004-10-18 2004-10-18 Vacuum processing device and transportation method of substrate

Country Status (1)

Country Link
JP (1) JP2005101625A (en)

Similar Documents

Publication Publication Date Title
JP2644912B2 (en) Vacuum processing apparatus and operating method thereof
JP2595132B2 (en) Vacuum processing equipment
KR100523822B1 (en) Vacuum processing apparatus and vacuum processing system
JP2646905B2 (en) Vacuum processing apparatus and operating method thereof
JP2005260274A (en) Vacuum processing apparatus and transfer processing method of substrate
JP3669998B2 (en) Substrate processing apparatus and substrate processing method
JP3628683B2 (en) Vacuum processing apparatus and substrate transfer processing method
JP3145376B2 (en) Substrate transfer method for vacuum processing equipment
JP2005101625A (en) Vacuum processing device and transportation method of substrate
JP3443421B2 (en) Vacuum processing device and vacuum processing method
JP3404391B2 (en) Vacuum processing method and vacuum processing apparatus for substrate
JP3561715B2 (en) Vacuum processing apparatus and vacuum processing method
JP2008109157A (en) Vacuum processing device
JP2816139B2 (en) Transfer system for vacuum processing apparatus and vacuum processing apparatus
JP3424750B2 (en) Vacuum processing apparatus and substrate vacuum processing method
JP2942527B2 (en) Vacuum processing device and its transport system
JP3404392B2 (en) Vacuum processing device and vacuum processing method
JP3145375B2 (en) Vacuum processing apparatus and vacuum processing method
JP3145359B2 (en) Vacuum processing apparatus and substrate vacuum processing method
JP3147230B2 (en) Vacuum processing apparatus and substrate vacuum processing method using the same
JP3183043B2 (en) Vacuum processing equipment
JP3073000B2 (en) Vacuum processing method and device
JP2000216211A (en) Substrate transfer system for vacuum treatment device
JP2000216220A (en) Substrate transportation method for vacuum process device
US7089680B1 (en) Vacuum processing apparatus and operating method therefor

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050308

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050509

A02 Decision of refusal

Effective date: 20051122

Free format text: JAPANESE INTERMEDIATE CODE: A02

RD02 Notification of acceptance of power of attorney

Effective date: 20051222

Free format text: JAPANESE INTERMEDIATE CODE: A7422

A521 Written amendment

Effective date: 20060120

Free format text: JAPANESE INTERMEDIATE CODE: A523

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Effective date: 20060314

Free format text: JAPANESE INTERMEDIATE CODE: A911

A912 Removal of reconsideration by examiner before appeal (zenchi)

Effective date: 20060421

Free format text: JAPANESE INTERMEDIATE CODE: A912