JP2006090873A - Electron beam transmission window, its manufacturing method, and electron beam irradiation apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron beam transmission window having high electron beam transmissivity and long life, and provide its manufacturing method and an electron beam irradiation apparatus. <P>SOLUTION: After forming a diamond nuclei on one surface of a silicon substrate, a diamond film 4 is formed as an electron beam transmission film on one surface of a silicon substrate by the chemical vapor deposition method. In the next, an opening is formed in the middle of the silicon substrate and a silicon support frame 2 is formed on one surface of the diamond film 4. Then, an aluminum support frame 3 pinching the periphery of the diamond film 4 together with the silicon support frame 2 is formed on the other surface of the diamond film 4 to be an electron beam transmission window 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an electron beam transmission window using a diamond thin film, a manufacturing method thereof, and an electron beam irradiation apparatus provided with the electron beam transmission window.

  The electron beam irradiation method in which electrons are accelerated by applying a voltage in a vacuum, and the accelerated electrons are taken out into a reduced-pressure or normal-pressure gas atmosphere to irradiate an object has good controllability and a high process speed. Since the object has the advantage that heat is not heated, it is used in a wide range of fields such as crosslinking or curing of paints, printing inks, adhesives, adhesives and other resin products, surface modification, desulfurization / denitration and sterilization Has been. Also, the electron beam irradiation method is frequently used in semiconductor manufacturing processes in which element circuits are miniaturized and highly integrated.

  For these reasons, development of electron beam irradiation apparatuses has been actively performed recently (see, for example, Patent Documents 1 to 3). FIG. 9A is a cross-sectional view showing a conventional electron beam irradiation apparatus, and FIG. 9B is a cross-sectional view showing the structure of the electron beam transmission window. As shown in FIG. 9A, the conventional electron beam irradiation apparatus 101 includes a vacuum container 103 having a vacuum chamber whose interior is kept at a high vacuum, and an electron detachment electrode that emits electrons into the vacuum chamber. An electronic detachment device 104 provided is provided. In addition, an acceleration electrode (not shown) that generates electrons by accelerating electrons leaving the electron detachment device 104 is provided in the vacuum vessel 103, and the vacuum chamber of the vacuum vessel 103 has electron beam transmission. It is connected to the conveyance part 102 which conveys an irradiation target object through the window 105.

  As shown in FIG. 7B, the electron beam transmission window 105 in the electron beam irradiation apparatus 101 is generally composed of an electron beam transmission film 106 made of titanium, aluminum, silicon, a silicon compound, or the like and extremely thin and transmits an electron beam. The support frame 107 is thick enough to support the electron beam permeable film so as not to transmit the electron beam.

  In such a conventional electron beam irradiation apparatus 101, electrons emitted from the electron detachment device 104 are accelerated in the vacuum chamber to generate an electron beam, and this electron beam is transmitted through the electron beam transmission film 106 of the electron beam transmission window 105. Irradiates the object installed in the conveyance unit 102 through the light.

JP 2003-337199 A JP 2004-105300 A JP 2004-239819 A

  However, the conventional techniques described above have the following problems. In the conventional electron beam irradiation apparatus as described in Patent Documents 1 to 3, the transmittance of the electron beam in the electron beam transmission window changes according to the thickness of the electron beam transmission film. For this reason, in order to increase the transmittance of the electron beam, extend the lifetime of the electron beam transmission window, and improve the performance of the electron beam irradiation device, it is desirable to make the electron beam transmission film as thin as possible. Since the window is also a vacuum partition between the transfer unit and the vacuum vessel, there is a problem that the function as the vacuum partition is lowered when the electron beam transmission film is thinned.

  In addition, in the conventional electron beam transmission window, a part of the electron beam is absorbed by the electron beam transmission film, the temperature rises due to the Joule heat generated thereby, and the electron beam transmission film is thermally deformed, broken, reduced in strength and There is a problem that peeling from the support frame occurs.

  The present invention has been made in view of such problems, and an object thereof is to provide an electron beam transmission window having a high electron beam transmittance and a long lifetime, a method for manufacturing the same, and an electron beam irradiation apparatus.

  An electron beam transmission window according to the first invention of the present application is a first provided on the front and back surfaces of an electron beam transmission film that mainly transmits diamond and transmits an electron beam, and a peripheral portion of the electron beam transmission film. And a second support frame.

  In the present invention, the electron beam transmission film is formed of diamond, and further, the first and second support frames are provided on both surfaces of the diamond film. The transmittance can be improved and the life can be extended.

  On at least one surface of the electron beam permeable film, an oxidation resistant film that transmits the electron beam may be formed on a region where the first and second support frames are not provided. Thereby, since the oxidation of the electron beam transmission film in the high temperature treatment process can be prevented, durability is improved. This oxidation resistant film can be formed of at least one material selected from the group consisting of SiC, SiO, SiN, AlO, Al, and Ti, for example.

  The first support frame can be formed of, for example, silicon or silicon carbide, and the second support frame is made of silicon, silicon carbide, a metal material having a thermal conductivity of 200 W / m · ° C. or more, and It can be formed of one material selected from the group consisting of hydrogen storage materials.

  Further, the electron beam permeable film may be doped with B. Thereby, since electroconductivity is provided to the electron beam permeable film, it is possible to prevent charge-up, and the thermal conductivity is improved, so that the durability is improved.

  According to a second aspect of the present invention, there is provided a method of manufacturing an electron beam transmission window comprising: a step of forming a diamond nucleus on one surface of a substrate made of silicon or silicon carbide; and a chemical vapor deposition method on one surface of the substrate. A step of forming an electron beam transmissive film comprising diamond as a main component, a step of forming an opening in the center of the substrate and forming a first support frame on one surface of the electron beam transmissive film, Forming a second support frame sandwiching a peripheral portion of the electron beam permeable film together with the first support frame on the other surface of the electron beam permeable film.

  In the present invention, after forming the diamond nucleus on the substrate, the electron beam transmitting film containing diamond as a main component is formed. Therefore, an electron beam transmitting film having no defects such as pinholes can be formed. it can. As a result, an electron beam transmission window having a high electron beam transmittance and a long lifetime can be obtained.

  The step of forming the diamond nuclei comprises polishing the surface of the substrate with diamond powder, sonicating the substrate in a suspension of diamond powder, uniformly applying the diamond powder to the surface of the substrate, and carbonizing the substrate. At least one treatment selected from the group consisting of exposure to contained plasma may be performed. Thereby, diamond nuclei can be easily formed on the substrate surface.

  In this method of manufacturing an electron beam transmission window, oxidation resistance is further achieved by a material that transmits an electron beam on a region where the first and second support frames are not formed on at least one surface of the electron beam transmission film. A film may be formed. Thereby, since the oxidation of the electron beam transmission film in the high temperature treatment process can be prevented, durability is improved.

  Further, in the step of forming the electron beam transmitting film, diborane can be added to the atmospheric gas, and the diamond film can be doped with B. Thereby, conductivity is imparted to the diamond film, so that charge-up can be prevented and thermal conductivity is improved, so that durability is improved.

  Furthermore, in the step of forming the electron beam permeable film, at least one gas selected from the group consisting of an oxygen-containing gas, a rare gas, and a nitrogen-containing gas may be added to the atmospheric gas. Thereby, since heat conductivity improves, durability improves.

  An electron beam irradiation apparatus according to the third invention of the present application has the electron beam transmission window. In the present invention, the main component of the electron beam transmission film is diamond, and an electron beam transmission window is used in which the periphery is sandwiched between the first and second support frames. Therefore, compared to a conventional electron beam irradiation apparatus. Thus, the electron beam transmittance in the electron beam transmission window can be improved and the life of the electron beam transmission window can be extended.

  According to the present invention, since the main component of the electron beam transmissive film is diamond, the electron beam transmittance can be improved. Further, since the electron beam transmissive film is sandwiched between the two support frames, the electron beam transmissive film is transmitted. The film is not easily damaged, and the lifetime of the electron beam transmission window can be extended.

  The electron beam irradiation window according to the embodiment of the present invention will be described below. The characteristics required for the electron beam permeable film for the electron beam transmission window are that it is not easily altered even when irradiated with an electron beam and has excellent thermal conductivity, high electron beam transmittance, and secondary electron emission properties. Examples thereof include excellent properties, electrical conductivity, uniform film thickness, high mechanical strength and a vacuum partition, no pinholes, and low residual stress. Conventionally, it has been difficult to realize an electron beam transmissive film satisfying all of these characteristics, but the present inventors have found that a diamond film formed by a CVD (Chemical Vapor Deposition method) method has all the above characteristics. Found to meet. The diamond film is excellent in thermal conductivity and mechanical strength as described in, for example, Japanese Patent Application Laid-Open No. 2002-217094. However, on the other hand, it is “oxidized and etched at high temperature”, “it is not easy to form a film without pinholes”, “residual stress is difficult to control, and the desired mechanical strength cannot be obtained. Etc. ”. Therefore, the present inventors have devised the structure of the electron beam transmission window and the method of forming the diamond film, thereby achieving an ideal electron beam transmission window using the diamond film as the electron beam transmission film, that is, the present invention. It was.

  First, the electron beam transmission window according to the first embodiment of the present invention will be described. FIG. 1A is a plan view of the electron beam transmission window according to the present embodiment as viewed from one surface side, and FIG. 1B is a plan view as viewed from the other surface side. FIG. 2 is a cross-sectional view taken along line AA shown in FIG. As shown in FIGS. 1A and 1B and FIG. 2, the electron beam transmission window 1 of the present embodiment is an electron beam transmission film having a thickness of, for example, 0.8 to 10 μm and a diameter of, for example, 0.1 mm. On one surface of the diamond film 4 having a thickness of 5 to 10 mm, a first support frame is formed with a thickness of, for example, 0.5 to 2.0 mm, a diameter of, for example, 25 to 200 mm, and a surface having a (001) surface. A support frame 2 made of silicon is provided. Further, on the other surface of the diamond film 4, as a second support frame, a support having a thickness of, for example, 0.01 to 1 mm, an outer diameter of, for example, 200 mm, and an inner diameter of, for example, 1 to 20 mm, and made of aluminum. A frame 3 is formed coaxially with the silicon support frame 2 and the diamond film 4.

  In the electron beam transmission window 1 of the present embodiment, since the electron transmission film is formed of diamond, the thermal conductivity, mechanical strength, and electron permeability of the electron transmission film are improved as compared with the conventional electron transmission window. . The diamond film 4 may be doped with impurities such as boron (B). Thereby, conductivity is imparted to the diamond film, and charge-up during electron beam transmission can be prevented. In addition, since the B-doped diamond film has improved thermal conductivity as compared with the undoped diamond film, the durability is improved.

  Further, in the electron beam transmission window 1 of the present embodiment, the silicon support frame 2 whose surface is formed by the (001) plane is used as the first support frame, and the aluminum support frame 3 is used as the second support frame. However, it is only necessary that these support frames are made of a material suitable for a fine patterning process such as a membrane array. Specifically, the first support frame can be formed of silicon or silicon carbide.

  On the other hand, the second support frame can be formed of one material selected from the group consisting of silicon, silicon carbide, a metal material having a thermal conductivity of 200 W / m · ° C. or higher, and a hydrogen storage material. In particular, when the second support frame is formed of a metal material having a thermal conductivity of 200 W / m · ° C. or higher, such as aluminum and silver, heat can be efficiently released from the diamond film 4 which is an electron beam transmitting film. it can. In addition, when the second support frame is formed of a hydrogen storage material such as non-diamond carbon, nitrogen carbide (CN), fullerene, or titanium, hydrogen is released from the other support frame due to temperature rise during electron beam transmission. The hydrogen termination of the diamond surface is maintained, and a high secondary electron emission rate can be maintained. As a result, the characteristics as an electron permeable film can be maintained for a long period of time, and generation of Joule heat can be suppressed.

  In the electron beam transmission window 1 of the present embodiment, the silicon support frame 2 and the aluminum support frame 3 and the support frames of different materials are provided on the front and back surfaces of the diamond film 4, respectively. However, the material of the two support frames may be the same. On the other hand, when the two support frames are formed of different materials like the electron beam transmission window 1, they can be provided with different functions, so that various requirements and applications can be met. In that case, whether the first and second support frames are arranged on the electron beam incident side or the electron beam emission side can be appropriately selected according to the purpose.

  Since the electron beam transmission window 1 of this embodiment is provided with support frames on both sides of the diamond film 4, the diamond film 4 which is an electron beam transmission film is not easily damaged. At this time, the positions of the two support frames greatly affect the mechanical strength of the electron beam transmission window. 3A to 3C are cross-sectional views showing the positional relationship of the support frames in the electron beam transmission window. For example, as shown in FIG. 3A, when the support frames 11a and 12a having the same outer diameter are arranged so as to sandwich the diamond film 13, the stress concentration on the diamond film 13 near the periphery of the opening is reduced. Like the conventional electron beam transmission window shown in FIG. 9B, the diamond film 13 is less likely to be damaged than when the support frame is provided only on one surface of the electron beam transmission film.

  Further, for example, a silicon substrate having a (100) surface is used as the support frame 11b. After the diamond film 13 is formed on the silicon substrate (support frame 11b), the silicon substrate (support) is formed by a chemical process. When the frame 11b) is anisotropically etched, the opening of the support frame 11b becomes larger as the distance from the diamond film 13 increases as shown in FIG. Even in such a case, the support frame 11b in the support frame 11b with the diamond film 13 sandwiched between the part of the support frame 11b in contact with the diamond film 13, that is, the part of the support frame 11b having the same opening as the smallest opening part. Since it arrange | positions so that it may mutually oppose, damage to an electron beam permeable film can be suppressed.

  Further, as shown in FIG. 3C, when the opening of the support frame 12c is smaller than the opening of the support frame 11c, the aperture ratio of the electron beam transmission window, that is, the ratio of the portion through which the electron beam is transmitted is Although it decreases, the mechanical breakage rate of the diamond film 13 can be further reduced.

  The shape of the opening in the electron beam transmission window 1 of the present embodiment is not only circular in plan view as shown in FIGS. 1A and 1B, but also elliptical, rectangular or polygonal in plan view. Good. FIG. 4 is a plan view showing an electron beam transmission window in which a square opening is formed in plan view. When the opening is rectangular, stress tends to concentrate on the diamond film near the corner. Therefore, like the electron beam transmission window 21 shown in FIG. 4, the shape of the opening on the support frame 23 side is a circular shape having a smaller diameter than one side of the opening on the support frame 22 side. As a result, stress concentration on the diamond film 13 is alleviated, so that the mechanical damage rate of the diamond film 13 can be reduced and the lifetime of the electron beam transmission window can be extended.

  As described above, in the electron beam transmission window 1 of the present embodiment, the electron transmission film is formed of diamond, and both surfaces of the diamond film 4 are supported by the support frames 2 and 3, respectively. Compared with the window, thermal conductivity, mechanical strength and electron permeability can be improved. As a result, an electron beam transmission window having a high electron beam transmittance and a long lifetime can be obtained.

  Next, the manufacturing method of the electron beam transmission window 1 of this embodiment is demonstrated. 5A to 5E are cross-sectional views showing the method of manufacturing the electron beam transmission window of this embodiment in the order of the steps. First, for a silicon substrate 5 having a thickness of, for example, 0.5 to 2.0 mm and having a (001) surface, the surface is polished with diamond powder having a particle size of 1 μm or less, and the particle size is 1 μm. At least one surface treatment selected from ultrasonic treatment in the following suspension of diamond powder, uniform application of diamond powder having a particle size of 1 μm or less on the surface, and exposure to carbon-containing plasma in a CVD apparatus Then, as shown in FIG. 5A, the thickness of the silicon substrate 5 is, for example, 0.8 to 10 μm, the diameter is, for example, 200 mm, and becomes an electron beam transmission film by CVD. A diamond film 4 is formed. At that time, in addition to hydrocarbons such as methane as the raw material gas and hydrogen as the carrier gas, oxygen component-containing gases such as oxygen, carbon monoxide, acetone and ethanol, rare gases such as argon and helium, or nitrogen, for example When a nitrogen component-containing gas such as ammonia or NOx is added, the thermal conductivity of the diamond film is improved, and an electron beam permeable film having excellent durability can be obtained.

  Next, as shown in FIG. 5B, a mask 6 made of SiN or the like and having an opening 6a is formed on the surface of the silicon substrate 5 where the diamond film 4 is not formed. Thereafter, as shown in FIG. 5C, the portion of the silicon substrate 5 where the mask 6 is not formed is etched with a KOH solution or the like to form the support frame 2 made of silicon on one surface of the diamond film 4. . Next, as shown in FIG. 5D, the mask 6 is removed, and as shown in FIG. 5E, the surface of the diamond film 4 has a thickness of, for example, 0.01 to 1 mm, an outer diameter of, for example, 200 mm, The support frame 3 made of aluminum having an inner diameter of, for example, 1 to 10 mm is fused or pattern-deposited.

  A diamond film is excellent in mechanical strength, thermal conductivity and chemical stability, and has a low density. Therefore, a diamond film is suitable for an electron beam transmission film. Since it was not, it was not put into practical use. Therefore, the present inventors have performed the above-described treatment on the surface of the support frame on which the diamond film is formed, thereby forming diamond nuclei on the surface of the silicon substrate 2 and realizing an extremely thin diamond film having no pinholes. did. As described above, when diamond nuclei are generated on the surface of the silicon substrate 5, the crystallinity of the diamond film is improved, and an extremely thin film without pinholes can be formed. These treatments can achieve the same effect even when the first support frame is formed of silicon carbide.

  The diamond film 4 does not need to be formed on the entire surface of the silicon substrate 5. For example, the diamond film 4 may be formed only in a predetermined region with a predetermined layout. Generally, a diamond film formed on a substrate such as a silicon substrate has a distribution in film thickness, but it is difficult to make the film thickness uniform by cutting the surface of the diamond film. Even in such a case, in the electron transmission window 1 of the present embodiment, the position and shape of the opening can be adjusted according to the film thickness distribution of the diamond film. The amount of electron beam transmission can be made uniform by making a diamond film in the form of a membrane array taking advantage of the properties of diamond film formation that is thick and thin in the peripheral part.

  The electron beam transmission window 1 of this embodiment is attached to the electron beam extraction port of an electron beam irradiation apparatus, for example. At this time, the silicon support frame 2 side surface is disposed on the vacuum side. This facilitates vacuum sealing.

  Next, an electron beam transmission window according to the second embodiment of the present invention will be described. FIG. 6 is a cross-sectional view showing the structure of the electron beam transmission window of this embodiment. In FIG. 6, the same components as those in the electron beam transmission window 1 of the first embodiment shown in FIG. 2 are denoted by the same reference numerals, and detailed description thereof is omitted. As shown in FIG. 6, the electron beam transmission window 31 of the present embodiment is an electron beam transmission film on one surface of the diamond film 4 having a thickness of, for example, 0.8 to 10 μm and a diameter of, for example, 200 mm. As the first support frame, there is provided a silicon support frame 2 having a thickness of, for example, 0.5 to 2.0 mm, a diameter of, for example, 25 to 200 mm, and a surface formed by a (001) plane, and a diamond film On the other surface of 4, an aluminum support frame 3 having a thickness of 0.01 to 1 mm, an outer diameter of 200 mm, and an inner diameter of 1 to 10 mm, for example, is provided as a second support frame.

  Further, on the other surface of the diamond film 4, an oxidation resistant film 7 having a thickness of, for example, 0.01 to 1.00 μm and transmitting an electron beam is formed on a region where the aluminum support frame 3 is not formed. Has been. Diamond is easily oxidized at a high temperature, and after the diamond film 4 is formed, if a high temperature treatment such as vacuum bonding is performed, the diamond film 4 is oxidized and etched, and breakage easily occurs. Therefore, by forming the oxidation resistant film 7 on the exposed portion of the diamond film 4 like the electron beam transmission window 31 of the present embodiment, the diamond film 4 can be prevented from being damaged in the high temperature process, Durability can be improved. Further, by forming the oxidation resistant film 7 on the diamond film 4, the residual stress of the diamond film 4 can be canceled or the diamond film 4 can be reinforced.

  Examples of the material for forming the oxidation resistant film 7 include SiC, SiO, SiN, AlO, Al, Ti, TiO, and a mixture thereof. Further, a plurality of films made of the aforementioned materials may be laminated. it can. As a method of forming the oxidation resistant film 7, for example, the oxidation resistant film 7 having a thickness of, for example, 0.01 to 1.00 μm is formed in advance on the silicon substrate 5 whose surface is (001). Then, there is a method of forming the diamond film 4 by the CVD method on the surface of the silicon substrate 5 where the oxidation resistant film 7 is not formed. Alternatively, after removing the mask 6, an oxidation resistant film 7 may be deposited on a predetermined region on the diamond film 4, and then the aluminum support frame 3 may be deposited or fused.

  The electron beam transmission window 31 is attached to, for example, an electron beam extraction port of an electron beam irradiation apparatus. At that time, the side on which the oxidation resistant film 7 is formed, that is, the side on which the aluminum support frame 3 is formed is arranged on the atmosphere side. Thereby, the oxidation of the diamond film 4 at the time of vacuum bonding can be prevented. The configuration and effects of the electron beam transmission window 31 of the present embodiment other than those described above are the same as those of the electron beam transmission window 1 of the first embodiment described above.

  In the electron beam transmission window 31 of the second embodiment described above, the oxidation-resistant film 7 is formed on the surface of the aluminum support frame 3, but the present invention is not limited to this, and the silicon support frame The oxidation resistant film 7 may be formed on the second side. FIG. 7 is a cross-sectional view showing the structure of an electron beam transmission window according to a modification of the second embodiment of the present invention. In FIG. 7, the same components as those in the electron beam transmission window 31 of the second embodiment shown in FIG. 6 are denoted by the same reference numerals, and detailed description thereof is omitted. As shown in FIG. 7, in the electron beam transmission window 32 of this modification, the thickness is, for example, 0.01 to 1... On the region of the one surface of the diamond film 4 where the silicon support frame 2 is not formed. An oxidation-resistant film 7 that transmits an electron beam at 00 μm is formed. As a method of forming the oxidation resistant film 7, there are methods such as CVD, thermal oxidation, sputter deposition and the like.

  The electron beam transmission window 32 is attached to, for example, an electron beam extraction port of an electron beam irradiation apparatus. At this time, the side where the oxidation-resistant film 7 is formed, that is, the silicon support frame 2 side is arranged on the atmosphere side. Thereby, the oxidation of the diamond film 4 at the time of vacuum bonding can be prevented. The configuration and effects of the electron beam transmission window 32 of this modification other than those described above are the same as those of the electron beam transmission window 31 of the second embodiment described above.

  Next, the electron beam irradiation apparatus of the 3rd Embodiment of this invention is demonstrated. FIG. 8 is a perspective view showing the electron beam irradiation apparatus of the present embodiment. As shown in FIG. 8, in the electron beam irradiation apparatus 41 of this embodiment, the electron source 43 is arrange | positioned in the vacuum sealed tube 42, The above-mentioned 1st above-mentioned 1st end of the vacuum sealed tube 42 is shown. The electron beam transmission window 1 of the embodiment is vacuum bonded. Further, a bias grid 44 is disposed between the electron beam transmission window 1 and the electron source 43.

  In this electron beam irradiation device 41, electrons generated from the electron source 43 are accelerated by the bias grid 44 to become an electron beam, and are transmitted through the diamond film 4 of the electron beam transmission window 1 and irradiated onto the object.

  In the electron beam irradiation apparatus 41 of the present embodiment, the electron transmission film is the diamond film 4, and the electron beam transmission window 1 in which the silicon support frame 2 and the aluminum support frame are formed on both surfaces thereof is used. Compared with the conventional electron beam irradiation apparatus, the electron beam transmittance in the electron beam transmission window can be improved and the life can be extended.

  In addition, in the electron beam irradiation apparatus 41 of this embodiment, although the electron beam transmission window 1 is used, this invention is not limited to this, The electron beam transmission window 31 of 2nd Embodiment mentioned above. And the electron beam transmission window 32 of the modified example may be used.

(A) is the top view which looked at the electron beam transmission window of the 1st Embodiment of this invention from the one surface side, (b) is the top view seen from the other surface side. It is sectional drawing by the AA line shown to Fig.1 (a). (A) thru | or (e) are sectional drawings which show the positional relationship of each support frame in an electron beam transmission window. It is a top view which shows the electron beam transmission window in which the square-shaped opening part was formed by planar view. (A) thru | or (d) is a top view which shows the manufacturing method of the electron beam irradiation window of the 1st Embodiment of this invention in the order of the process. It is sectional drawing which shows the structure of the electron beam transmission window of the 2nd Embodiment of this invention. It is sectional drawing which shows the structure of the electron beam transmission window of the modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the electron beam irradiation apparatus of the 3rd Embodiment of this invention. (A) It is sectional drawing which shows the conventional electron beam irradiation apparatus, (b) is sectional drawing which shows the structure of the electron beam permeable film.

Explanation of symbols

1, 21, 31, 32, 105; electron beam transmission window 2, 3, 11a to 11c, 12a to 12c, 22, 23, 107; support frame 4, 13; diamond film 5; silicon substrate 6; mask 6a; Part 7; Oxidation resistant film 41; Electron beam irradiation device 42; Vacuum sealed tube 43; Electron source 44; Bias grid 101; Electron beam irradiation device 102; Conveying unit 103; Vacuum container 104; Electron release device 106;

Claims (12)

An electron beam transmission film that transmits an electron beam mainly composed of diamond, and first and second support frames provided on the front and back surfaces of the electron beam transmission film so as to sandwich the periphery of the electron beam transmission film. Characteristic electron beam transmission window. The oxidation-resistant film that transmits an electron beam is formed on at least one surface of the electron beam transmitting film on a region where the first and second support frames are not provided. 2. The electron beam transmission window according to 1. 3. The electron beam transmission window according to claim 2, wherein the oxidation resistant film is formed of at least one material selected from the group consisting of SiC, SiO, SiN, AlO, Al, and Ti. 4. The electron beam permeable film according to claim 1, wherein the first support frame is made of silicon or silicon carbide. 5. The second support frame is formed of one material selected from the group consisting of silicon, silicon carbide, a metal material having a thermal conductivity of 200 W / m · ° C. or higher, and a hydrogen storage material. The electron beam transmission window according to any one of claims 1 to 4. 6. The electron beam transmitting window according to claim 1, wherein the electron beam transmitting film is doped with B. Forming diamond nuclei on one surface of a substrate made of silicon or silicon carbide; forming a electron beam transmissive film mainly composed of diamond on one surface of the substrate by chemical vapor deposition; and Forming a first support frame on one surface of the electron beam permeable film by forming an opening in the central portion of the substrate; and the first support frame on the other surface of the electron beam permeable film. And a step of forming a second support frame sandwiching the periphery of the electron beam permeable film. The step of forming the diamond nuclei comprises polishing the surface of the substrate with diamond powder, sonicating the substrate in a suspension of diamond powder, uniformly applying the diamond powder to the surface of the substrate, and carbonizing the substrate. 8. The method of manufacturing an electron beam transmitting window according to claim 7, wherein at least one treatment selected from the group consisting of exposure to contained plasma is performed. Forming an oxidation resistant film with a material that transmits an electron beam on a region where the first or second support frame is not formed on at least one surface of the electron beam transmitting film. The manufacturing method of the electron beam transmission window of Claim 7 or 8. 10. The electron beam transmission according to claim 7, wherein in the step of forming the electron beam transmission film, diborane is added to an atmospheric gas, and the electron beam transmission film is doped with B. Window manufacturing method. 11. The method according to claim 7, wherein in the step of forming the electron beam permeable film, at least one gas selected from the group consisting of an oxygen-containing gas, a rare gas, and a nitrogen-containing gas is added to the atmospheric gas. The manufacturing method of the electron beam transmissive window of any one of Claims 1. An electron beam irradiation apparatus comprising the electron beam transmission window according to claim 1.

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