JP2006090714A - Liquid level detecting sensor - Google Patents

Liquid level detecting sensor Download PDF

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JP2006090714A
JP2006090714A JP2004272844A JP2004272844A JP2006090714A JP 2006090714 A JP2006090714 A JP 2006090714A JP 2004272844 A JP2004272844 A JP 2004272844A JP 2004272844 A JP2004272844 A JP 2004272844A JP 2006090714 A JP2006090714 A JP 2006090714A
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liquid level
resistance layer
temperature detection
liquid
layer
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Kazuyuki Tsujioka
一幸 辻岡
義典 ▲高▼嶋
Yoshinori Takashima
Motoki Ogata
基樹 緒方
Hideo Kitahara
秀夫 北原
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid level detecting sensor capable of preventing a drip-feed solution in a drip container from being contaminated. <P>SOLUTION: This liquid level detecting sensor is provided with an erected insulation substrate 11, a liquid level detecting resistance layer 14 provided ranging over from an upper side to a lower side on one face of the insulation substrate 11, a gas temperature detecting resistance layer 18 provided to be positioned in the upper side on the one face of the insulation substrate 11, and a liquid temperature detecting resistance layer 20 provided to be positioned in the lower side on the one face of the insulation substrate 11, and the insulation substrate 11 is constituted to be film-like. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、特に点滴容器内の液面を検出する液面検出センサに関するものである。   The present invention particularly relates to a liquid level detection sensor for detecting a liquid level in an infusion container.

従来、この種の液面検出センサは、図５に示すような構成を有していた。   Conventionally, this type of liquid level detection sensor has a configuration as shown in FIG.

図５は従来の液面検出センサの正面図である。   FIG. 5 is a front view of a conventional liquid level detection sensor.

図５において、１はＡｌ2Ｏ3からなる絶縁基板で、この絶縁基板１は長手方向に略垂直に立設させるとともに、この絶縁基板１の一側面には上側に位置して電源電極２、中間電極３およびＧＮＤ電極４を並列に設けている。また、絶縁基板１の一側面には、第１の回路パターン５を介してＧＮＤ電極４と一端が電気的に接続されるように複数のサーミスタ抵抗層６を上側から下側にわたって設けている。そして、このサーミスタ抵抗層６は温度が上昇すると抵抗値が急激に下がる特性を有している。そしてまた、前記絶縁基板１の一側面にはサーミスタ抵抗層６と同じ高さに位置して複数の固定抵抗層７を設けており、この固定抵抗層７は一端を第２の回路パターン８を介して前記電源電極２に電気的に接続している。さらに、前記絶縁基板１の一側面には第３の回路パターン９を設けており、この第３の回路パターン９により、前記サーミスタ抵抗層６の他端と固定抵抗層７の他端を電気的に接続している。 In FIG. 5, reference numeral 1 denotes an insulating substrate made of Al 2 O 3 , and this insulating substrate 1 is erected substantially perpendicularly to the longitudinal direction. The intermediate electrode 3 and the GND electrode 4 are provided in parallel. In addition, a plurality of thermistor resistance layers 6 are provided on one side surface of the insulating substrate 1 from the upper side to the lower side so that one end of the GND electrode 4 is electrically connected via the first circuit pattern 5. The thermistor resistance layer 6 has a characteristic that the resistance value rapidly decreases as the temperature rises. Further, a plurality of fixed resistance layers 7 are provided on one side surface of the insulating substrate 1 at the same height as the thermistor resistance layer 6, and one end of the fixed resistance layer 7 has the second circuit pattern 8. And is electrically connected to the power supply electrode 2. Further, a third circuit pattern 9 is provided on one side surface of the insulating substrate 1, and the other end of the thermistor resistance layer 6 and the other end of the fixed resistance layer 7 are electrically connected by the third circuit pattern 9. Connected to.

以上のように構成された従来の液面検出センサについて、次にその動作を図面を参照しながら説明する。   Next, the operation of the conventional liquid level detection sensor configured as described above will be described with reference to the drawings.

液面検出センサを図６に示すように、液面に対して略垂直に立設して液体１０に浸漬し、電源電極２とＧＮＤ電極４との間に直流電圧を印加する。この場合、液面より上方に位置するサーミスタ抵抗層６は通電によって発熱し、また液面より下方に位置するサーミスタ抵抗層６は液体１０によって冷却される。そして、サーミスタ抵抗層６は温度が上昇すると抵抗値が急激に下がる特性を有しているため、液面より上方に位置するサーミスタ抵抗層６の抵抗値は液面より下方に位置するサーミスタ抵抗層６の抵抗値に比べて十分小さな値となり、これにより、液面より上方に位置するサーミスタ抵抗層６に流れる電流は、液面より下方に位置するサーミスタ抵抗層６に流れる電流に比べて十分大きな値となる。従って、電源電極２およびＧＮＤ電極４に直列に電流計（図示せず）を接続すると、電源電極２とＧＮＤ電極４との間に流れる電流は液面より上方に位置するサーミスタ抵抗層６の個数に応じ、増加した値となるため、液面の高さを知ることができるものである。   As shown in FIG. 6, the liquid level detection sensor is set up substantially perpendicular to the liquid level and immersed in the liquid 10, and a DC voltage is applied between the power supply electrode 2 and the GND electrode 4. In this case, the thermistor resistance layer 6 positioned above the liquid level generates heat when energized, and the thermistor resistance layer 6 positioned below the liquid level is cooled by the liquid 10. Since the thermistor resistance layer 6 has a characteristic that the resistance value rapidly decreases as the temperature rises, the resistance value of the thermistor resistance layer 6 located above the liquid level is the thermistor resistance layer located below the liquid level. Therefore, the current flowing through the thermistor resistance layer 6 located above the liquid level is sufficiently larger than the current flowing through the thermistor resistance layer 6 located below the liquid level. Value. Therefore, when an ammeter (not shown) is connected in series with the power supply electrode 2 and the GND electrode 4, the current flowing between the power supply electrode 2 and the GND electrode 4 is the number of the thermistor resistance layers 6 positioned above the liquid level. Therefore, the height of the liquid level can be known.

なお、この出願の発明に関連する先行技術文献情報としては、例えば、特許文献１が知られている。
特開昭６２−１０２１２０号公報 As prior art document information related to the invention of this application, for example, Patent Document 1 is known.
JP 62-102120 A

しかしながら上記従来の構成においては、液面検出センサにより、点滴容器の内側の液面を検出する場合、液面検出センサ自体を点滴容器内の点滴溶液に浸さなければならないため、点滴溶液が汚れる可能性があり、これにより、点滴溶液を使用することができなくなるという課題を有していた。   However, in the above-described conventional configuration, when the liquid level detection sensor detects the liquid level inside the drip container, the drip solution may become dirty because the liquid level detection sensor itself must be immersed in the drip solution in the drip container. Therefore, there is a problem that the drip solution cannot be used.

本発明は上記従来の課題を解決するもので、点滴容器内の点滴溶液を汚してしまうことがない液面検出センサを提供することを目的とするものである。   The present invention solves the above-described conventional problems, and an object of the present invention is to provide a liquid level detection sensor that does not contaminate the drip solution in the drip container.

上記目的を達成するために、本発明は以下の構成を有するものである。   In order to achieve the above object, the present invention has the following configuration.

本発明は、絶縁基板をフィルム状に構成したもので、この構成によれば、絶縁基板をフィルム状に構成しているため、点滴容器の外側面に点滴容器の外形形状に合わせて液面検出センサを設けることができ、これにより、点滴容器の外側面部を介して点滴溶液の液位を検出することができるため、点滴溶液を汚さずに液位を検出できるという作用効果を有するものである。   In the present invention, the insulating substrate is configured in a film shape. According to this configuration, since the insulating substrate is configured in a film shape, the liquid level detection is performed on the outer surface of the drip container according to the outer shape of the drip container. A sensor can be provided, whereby the liquid level of the drip solution can be detected via the outer surface portion of the drip container, so that the liquid level can be detected without contaminating the drip solution. .

以上のように本発明の液面検出センサは、絶縁基板をフィルム状に構成しているため、点滴容器の外側面に点滴容器の外形形状に合わせて液面検出センサを設けることができ、これにより、点滴容器の外側面部を介して点滴溶液の液位を検出することができるため、点滴溶液を汚さずに液位を検出できる液面検出センサを提供することができるという優れた効果を奏するものである。   As described above, since the liquid level detection sensor of the present invention has the insulating substrate configured in a film shape, the liquid level detection sensor can be provided on the outer surface of the drip container according to the outer shape of the drip container. Thus, since the liquid level of the drip solution can be detected via the outer surface portion of the drip container, the liquid level detection sensor capable of detecting the liquid level without contaminating the drip solution can be provided. Is.

以下、一実施の形態を用いて、本発明の請求項１〜４に記載の発明について説明する。   Hereinafter, the invention according to claims 1 to 4 of the present invention will be described using an embodiment.

図１は本発明の一実施の形態における液面検出センサの上面図、図２は同液面検出センサの側断面図である。   FIG. 1 is a top view of a liquid level detection sensor according to an embodiment of the present invention, and FIG. 2 is a side sectional view of the liquid level detection sensor.

図１、図２において、１１はフィルム状に構成されたポリエチレンテレフタレートからなる直方体形状の絶縁基板で、この絶縁基板１１は長手方向に略垂直に立設させるとともに、一側面にエポキシ系樹脂からなる絶縁層１２を設けており、さらに、前記絶縁基板１１と絶縁層１２との間にはＡｇ系樹脂とエポキシ系樹脂との混合物からなる発熱抵抗体層１３を設けている。また、前記絶縁基板１１における絶縁層１２の側面には上方から下方にわたってＡｇ系樹脂とエポキシ系樹脂との混合物からなる樹脂材料をバインダーとするサーミスタで構成した液位検出抵抗層１４を設けており、この液位検出抵抗層１４の長手方向と垂直な方向の両端には一対の液位測定電極１５を設けるとともに、この液位測定電極１５は配線パターン１６を介して外部電極１７と電気的に接続している。そしてまた、前記絶縁基板１１における絶縁層１２の側面には上方に位置してＡｇ系樹脂とエポキシ系樹脂との混合物からなる樹脂材料をバインダーとするサーミスタで構成した気体温度検出抵抗層１８を設けており、この気体温度検出抵抗層１８の両端には一対のＡｇからなる気体温度検出電極１９を設けるとともに、この気体温度検出電極１９は配線パターン１６を介して外部電極１７と電気的に接続している。さらに、前記絶縁基板１１における絶縁層１２の側面には下方に位置してＡｇ系樹脂とエポキシ系樹脂との混合物からなる樹脂材料をバインダーとするサーミスタで構成した液体温度検出抵抗層２０を設けており、この液体温度検出抵抗層２０の両端には一対のＡｇからなる液体温度検出電極２１を設けるとともに、この液体温度検出電極２１は配線パターン１６を介して外部電極１７と電気的に接続している。そして、前記一対の気体温度検出電極１９間の長さと、一対の液体温度検出電極２１間の長さは略同一とし、この長さを単位長さと定義する。２２はＳｉ系またはアクリル系からなる接着層で、この接着層２２は前記絶縁基板１１、液位検出抵抗層１４、液位測定電極１５、気体温度検出抵抗層１８、気体温度検出電極１９、液体温度検出抵抗層２０および液体温度検出電極２１の側面に設けている。   1 and 2, reference numeral 11 denotes a rectangular parallelepiped insulating substrate made of polyethylene terephthalate formed in a film shape. The insulating substrate 11 is erected substantially perpendicular to the longitudinal direction and is made of an epoxy resin on one side surface. An insulating layer 12 is provided, and a heating resistor layer 13 made of a mixture of Ag resin and epoxy resin is provided between the insulating substrate 11 and the insulating layer 12. Further, a liquid level detection resistance layer 14 composed of a thermistor using a resin material made of a mixture of an Ag-based resin and an epoxy-based resin as a binder is provided on the side surface of the insulating layer 12 in the insulating substrate 11 from above to below. A pair of liquid level measurement electrodes 15 are provided at both ends in the direction perpendicular to the longitudinal direction of the liquid level detection resistance layer 14, and the liquid level measurement electrodes 15 are electrically connected to the external electrode 17 through the wiring pattern 16. Connected. Further, a gas temperature detection resistance layer 18 is provided on the side surface of the insulating layer 12 in the insulating substrate 11 and is composed of a thermistor located above and having a resin material made of a mixture of Ag-based resin and epoxy-based resin as a binder. A gas temperature detection electrode 19 made of a pair of Ag is provided at both ends of the gas temperature detection resistance layer 18, and the gas temperature detection electrode 19 is electrically connected to the external electrode 17 through the wiring pattern 16. ing. Further, a liquid temperature detection resistance layer 20 is provided on the side surface of the insulating layer 12 in the insulating substrate 11 and is composed of a thermistor located below and including a resin material made of a mixture of Ag-based resin and epoxy-based resin as a binder. In addition, a liquid temperature detection electrode 21 made of a pair of Ag is provided at both ends of the liquid temperature detection resistance layer 20, and the liquid temperature detection electrode 21 is electrically connected to the external electrode 17 through the wiring pattern 16. Yes. The length between the pair of gas temperature detection electrodes 19 and the length between the pair of liquid temperature detection electrodes 21 are substantially the same, and this length is defined as a unit length. 22 is an adhesive layer made of Si or acrylic, and this adhesive layer 22 is the insulating substrate 11, the liquid level detection resistance layer 14, the liquid level measurement electrode 15, the gas temperature detection resistance layer 18, the gas temperature detection electrode 19, and the liquid. Provided on the side surfaces of the temperature detection resistance layer 20 and the liquid temperature detection electrode 21.

上記本発明の一実施の形態においては、液位検出抵抗層１４、気体温度検出抵抗層１８および液体温度検出抵抗層２０をＡｇ系樹脂とエポキシ系樹脂との混合物からなる樹脂材料をバインダーとするサーミスタで構成しているため、前記樹脂材料からなるバインダーの焼成温度は比較的低いものとなり、これにより、絶縁基板１１を耐熱性の低い材料で構成することができるという効果を有するものである。   In one embodiment of the present invention, the liquid level detection resistance layer 14, the gas temperature detection resistance layer 18 and the liquid temperature detection resistance layer 20 are made of a resin material made of a mixture of an Ag-based resin and an epoxy-based resin as a binder. Since it is composed of a thermistor, the firing temperature of the binder made of the resin material is relatively low, thereby having the effect that the insulating substrate 11 can be composed of a material having low heat resistance.

以上のように構成された本発明の一実施の形態における液面検出センサについて、次に、その製造方法を説明する。   Next, a manufacturing method of the liquid level detection sensor according to the embodiment of the present invention configured as described above will be described.

まず、ボールミル（図示せず）にＭｎ，Ｃｏ，Ｎｉを５０：２０：１０の原子％比で投入し、粉砕する。   First, Mn, Co, and Ni are charged into a ball mill (not shown) at an atomic% ratio of 50:20:10 and pulverized.

次に、粉砕されたＭｎ，Ｃｏ，Ｎｉを焼成炉（図示せず）に投入し、約１２４０℃で固相反応させて、スピネル構造体を形成する。   Next, the pulverized Mn, Co, and Ni are put into a firing furnace (not shown) and subjected to a solid phase reaction at about 1240 ° C. to form a spinel structure.

次に、３本ロール（図示せず）に、Ｍｎ，Ｃｏ，Ｎｉのスピネル構造体７０ｗｔ％と、熱硬化性ポリイミド樹脂２２ｗｔ％と、カーボン粉末８ｗｔ％とを投入し、有機溶剤を添加しながら練り合わせてサーミスタのペーストを形成する。   Next, 70 wt% of Mn, Co, Ni spinel structure, 22 wt% of thermosetting polyimide resin, and 8 wt% of carbon powder are put into three rolls (not shown), and an organic solvent is added. Knead to form thermistor paste.

次に、フィルム状に構成されたポリエチレンテレフタレートからなる絶縁基板１１を準備した後、絶縁基板１１の一面にＡｇ粉とエポキシ樹脂との混合物からなる樹脂ペースト（図示せず）をスクリーン印刷により印刷した後、焼成炉（図示せず）に投入し、約１２０〜１５０℃で約３０分間焼成し、発熱抵抗体層１３を形成する。   Next, after preparing the insulating substrate 11 made of polyethylene terephthalate configured in a film shape, a resin paste (not shown) made of a mixture of Ag powder and epoxy resin was printed on one surface of the insulating substrate 11 by screen printing. Thereafter, it is put into a firing furnace (not shown) and fired at about 120 to 150 ° C. for about 30 minutes to form the heating resistor layer 13.

次に、前記絶縁基板１１における発熱抵抗体層１３を覆うように、エポキシ樹脂からなる絶縁ペーストをスクリーン印刷した後、ＵＶ炉（図示せず）に投入し、光量約２０００ｍｊ／ｃｍ2によって硬化させ、絶縁層１２を形成する。 Next, an insulating paste made of an epoxy resin is screen-printed so as to cover the heating resistor layer 13 on the insulating substrate 11, and then put into a UV furnace (not shown) and cured with a light amount of about 2000 mj / cm 2 . Then, the insulating layer 12 is formed.

次に、絶縁基板１１における絶縁層１２の一側面にＡｇの厚膜ペーストをスクリーン印刷した後、焼成炉（図示せず）に投入し、約２７０℃で約２〜１０分間焼成し、液位測定電極１５、気体温度検出電極１９、液体温度検出電極２１、配線パターン１６および外部電極１７を形成する。   Next, a thick film paste of Ag is screen-printed on one side surface of the insulating layer 12 in the insulating substrate 11, and then placed in a baking furnace (not shown) and baked at about 270 ° C. for about 2 to 10 minutes. A measurement electrode 15, a gas temperature detection electrode 19, a liquid temperature detection electrode 21, a wiring pattern 16 and an external electrode 17 are formed.

次に、絶縁基板１１の一側面に、前記液位測定電極１５、気体温度検出電極１９および液体温度検出電極２１の上面に重なるように、サーミスタのペーストをスクリーン印刷した後、約２７０℃で約２〜３時間焼成し、液位検出抵抗層１４、気体温度検出抵抗層１８および液体温度検出抵抗層２０を形成する。   Next, a thermistor paste is screen-printed on one side of the insulating substrate 11 so as to overlap the upper surfaces of the liquid level measurement electrode 15, the gas temperature detection electrode 19 and the liquid temperature detection electrode 21, and then about 270 ° C. The liquid level detection resistance layer 14, the gas temperature detection resistance layer 18, and the liquid temperature detection resistance layer 20 are formed by baking for 2 to 3 hours.

上記本発明の一実施の形態においては、液位検出抵抗層１４、液位測定電極１５、気体温度検出抵抗層１８、気体温度検出電極１９、液体温度検出抵抗層２０および液体温度検出電極２１を厚膜印刷工法により形成しているため、液面検出センサを容易に構成することができるという効果を有するものである。   In the above embodiment of the present invention, the liquid level detection resistance layer 14, the liquid level measurement electrode 15, the gas temperature detection resistance layer 18, the gas temperature detection electrode 19, the liquid temperature detection resistance layer 20, and the liquid temperature detection electrode 21 are provided. Since it is formed by the thick film printing method, the liquid level detection sensor can be easily configured.

最後に、前記絶縁基板１１、液位検出抵抗層１４、液位測定電極１５、気体温度検出抵抗層１８、気体温度検出電極１９、液体温度検出抵抗層２０および液体温度検出電極の側面を覆うように、Ｓｉからなる接着剤を塗布して接着層２２を形成する。   Finally, the insulating substrate 11, the liquid level detection resistance layer 14, the liquid level measurement electrode 15, the gas temperature detection resistance layer 18, the gas temperature detection electrode 19, the liquid temperature detection resistance layer 20, and the side surface of the liquid temperature detection electrode are covered. Then, an adhesive layer 22 is formed by applying an adhesive made of Si.

以上のように構成され、かつ製造された本発明の一実施の形態における液面検出センサについて、次に、その動作を図面を参照しながら説明する。   Next, the operation of the liquid level detection sensor according to the embodiment of the present invention configured and manufactured as described above will be described with reference to the drawings.

図３、図４に示すように、液面検出センサを点滴溶液２３を満たした点滴容器２４の外側面に貼り付ける。この場合、気体温度検出抵抗層１８は点滴容器２４内における気体と対向し、かつ液体温度検出抵抗層２０は点滴容器２４内における液体と対向し、さらに液位検出抵抗層１４は点滴容器２４の外側面を介して液面に接する位置になるように、液面検出センサを点滴容器２４の外側面に接着層２２の接着力により貼り付ける。   As shown in FIGS. 3 and 4, the liquid level detection sensor is attached to the outer surface of the drip container 24 filled with the drip solution 23. In this case, the gas temperature detection resistance layer 18 faces the gas in the drip container 24, the liquid temperature detection resistance layer 20 faces the liquid in the drip container 24, and the liquid level detection resistance layer 14 further A liquid level detection sensor is affixed to the outer surface of the drip container 24 by the adhesive force of the adhesive layer 22 so as to be in contact with the liquid level via the outer side surface.

上記本発明の一実施の形態においては、絶縁基板１１をフィルム状に構成しているため、点滴容器２４の外側面に点滴容器２４の外形形状に合わせて液面検出センサを設けることができ、これにより、点滴容器２４の外側面を介して点滴溶液２３の液位を検出することができるため、点滴溶液２３を汚さずに点滴容器２４内の液位を検出できるという効果を有するものである。   In the embodiment of the present invention, since the insulating substrate 11 is configured in a film shape, a liquid level detection sensor can be provided on the outer surface of the drip container 24 in accordance with the outer shape of the drip container 24. Thereby, since the liquid level of the drip solution 23 can be detected through the outer surface of the drip container 24, the liquid level in the drip container 24 can be detected without contaminating the drip solution 23. .

上記点滴容器２４の外側面に液面検出センサを貼り付けた状態において、絶縁基板１１に埋設された発熱抵抗体層１３に電圧が印加されると、発熱抵抗体層１３に流れる電流により発熱抵抗体層１３からジュール熱が発生する。このジュール熱は絶縁層１２を介して液位検出抵抗層１４、気体温度検出抵抗層１８および液体温度検出抵抗層２０に到達する。このとき、液位検出抵抗層１４のうちの液体に対向する部分と気体に対向する部分とでは、熱放散定数の差により単位長さあたりの自己発熱量に差が生じるため、液位検出抵抗層１４のうちの気体に対向する部分と液体に対向する部分とでは温度差が生じ、これにより、サーミスタの抵抗−温度特性により単位長さあたりの抵抗値に差が生じる。この抵抗値の差を一対の気体温度検出電極１９間に位置する気体温度検出抵抗層１８の抵抗値および一対の液体温度検出電極２１間に位置する液体温度検出抵抗層２０の抵抗値と比較して演算することにより、点滴容器２４内の点滴溶液２３の液面を検出するものである。   When a voltage is applied to the heating resistor layer 13 embedded in the insulating substrate 11 in a state where the liquid level detection sensor is attached to the outer surface of the drip container 24, the heating resistance is generated by the current flowing through the heating resistor layer 13. Joule heat is generated from the body layer 13. This Joule heat reaches the liquid level detection resistance layer 14, the gas temperature detection resistance layer 18, and the liquid temperature detection resistance layer 20 through the insulating layer 12. At this time, the liquid level detection resistance layer 14 has a difference in self-heat generation amount per unit length due to a difference in heat dissipation constant between the part facing the liquid and the part facing the gas. There is a temperature difference between the portion of the layer 14 facing the gas and the portion facing the liquid, which causes a difference in resistance value per unit length due to the resistance-temperature characteristics of the thermistor. The difference between the resistance values is compared with the resistance value of the gas temperature detection resistance layer 18 positioned between the pair of gas temperature detection electrodes 19 and the resistance value of the liquid temperature detection resistance layer 20 positioned between the pair of liquid temperature detection electrodes 21. In this way, the liquid level of the drip solution 23 in the drip container 24 is detected.

上記本発明の一実施の形態においては、絶縁基板１１における液位検出抵抗層１４、気体温度検出抵抗層１８および液体温度検出抵抗層２０を設けた箇所の近傍に位置して発熱抵抗層１３を埋設しているため、この発熱抵抗体層１３から液位検出抵抗層１４、気体温度検出抵抗層１８および液体温度検出抵抗層２０に対して熱を供給することができ、これにより、点滴容器２４内の液体より気体がさらに高温になるため、液体温度検出抵抗層２０および液位検出抵抗層１４のうちの液体に対向する部分は気体温度検出抵抗層１８および液位検出抵抗層１４のうちの気体に対向する部分より低温となり、これにより、各々の抵抗層の液体に対向する部分と気体に対向する部分の抵抗値の差が大となるため、液面検出センサの感度が向上するという効果を有するものである。   In one embodiment of the present invention, the heating resistor layer 13 is located in the vicinity of the location where the liquid level detecting resistor layer 14, the gas temperature detecting resistor layer 18 and the liquid temperature detecting resistor layer 20 are provided on the insulating substrate 11. Since it is embedded, heat can be supplied from the heating resistor layer 13 to the liquid level detection resistance layer 14, the gas temperature detection resistance layer 18, and the liquid temperature detection resistance layer 20. Since the temperature of the gas is higher than that of the liquid in the liquid, the portion of the liquid temperature detection resistance layer 20 and the liquid level detection resistance layer 14 that faces the liquid is the portion of the gas temperature detection resistance layer 18 and the liquid level detection resistance layer 14. The temperature is lower than that of the portion facing the gas, which increases the difference in resistance between the portion of each resistance layer that faces the liquid and the portion that faces the gas, thereby improving the sensitivity of the liquid level detection sensor. It is intended to have an effect.

本発明にかかる液面検出センサは、点滴容器内の点滴溶液を汚さずに液位を検出できる液面検出センサを提供することができるという効果を有し、点滴容器内の点滴溶液の液面を検出する液面検出センサとして有用である。   The liquid level detection sensor according to the present invention has an effect of providing a liquid level detection sensor capable of detecting the liquid level without contaminating the drip solution in the drip container, and the liquid level of the drip solution in the drip container. It is useful as a liquid level detection sensor for detecting the

本発明の一実施の形態における液面検出センサの上面図The top view of the liquid level detection sensor in one embodiment of this invention 同液面検出センサの側断面図Side sectional view of the same liquid level detection sensor 同液面検出センサを点滴容器に貼り付けた状態を示す斜視図The perspective view which shows the state which affixed the liquid level detection sensor on the drip container 同液面検出センサを点滴容器に貼り付けた状態を示す側断面図Side sectional view showing a state where the liquid level detection sensor is attached to the drip container 従来の液面検出センサの正面図Front view of conventional liquid level detection sensor 従来の液面検出センサの動作状態を示す部分拡大図Partial enlarged view showing the operating state of a conventional liquid level detection sensor

符号の説明Explanation of symbols

１１ 絶縁基板
１３ 発熱抵抗体層
１４ 液位検出抵抗層
１５ 液位測定電極
１８ 気体温度検出抵抗層
１９ 気体温度検出電極
２０ 液体温度検出抵抗層
２１ 液体温度検出電極 DESCRIPTION OF SYMBOLS 11 Insulating substrate 13 Heating resistor layer 14 Liquid level detection resistance layer 15 Liquid level measurement electrode 18 Gas temperature detection resistance layer 19 Gas temperature detection electrode 20 Liquid temperature detection resistance layer 21 Liquid temperature detection electrode

Claims (4)

立設された絶縁基板と、この絶縁基板の一面に上方から下方にわたって設けられた液位検出抵抗層と、この液位検出抵抗層の両端に設けられた一対の液位測定電極と、前記絶縁基板の一面の上方に位置して設けられた気体温度検出抵抗層と、この気体温度検出抵抗層の両端に設けられた一対の気体温度検出電極と、前記絶縁基板の一面の下方に位置して設けられた液体温度検出抵抗層と、この液体温度検出抵抗層の両端に設けられた一対の液体温度検出電極とを備え、前記絶縁基板をフィルム状に構成した液面検出センサ。 A standing insulating substrate; a liquid level detecting resistor layer provided on one surface of the insulating substrate from above to below; a pair of liquid level measuring electrodes provided at both ends of the liquid level detecting resistor layer; A gas temperature detecting resistor layer provided above one surface of the substrate, a pair of gas temperature detecting electrodes provided at both ends of the gas temperature detecting resistor layer, and positioned below one surface of the insulating substrate. A liquid level detection sensor comprising a liquid temperature detection resistance layer provided and a pair of liquid temperature detection electrodes provided at both ends of the liquid temperature detection resistance layer, wherein the insulating substrate is configured in a film shape. 液位検出抵抗層、液位測定電極、気体温度検出抵抗層、気体温度検出電極、液体温度検出抵抗層および液体温度検出電極を厚膜印刷工法により形成した請求項１記載の液面検出センサ。 The liquid level detection sensor according to claim 1, wherein the liquid level detection resistance layer, the liquid level measurement electrode, the gas temperature detection resistance layer, the gas temperature detection electrode, the liquid temperature detection resistance layer, and the liquid temperature detection electrode are formed by a thick film printing method. 液位検出抵抗層、気体温度検出抵抗層および液体温度検出抵抗層を樹脂材料をバインダーとするサーミスタで構成した請求項１記載の液面検出センサ。 The liquid level detection sensor according to claim 1, wherein the liquid level detection resistance layer, the gas temperature detection resistance layer, and the liquid temperature detection resistance layer are constituted by a thermistor using a resin material as a binder. 絶縁基板における液位検出抵抗層、気体温度検出抵抗層および液体温度検出抵抗層を設けた箇所の近傍に位置して発熱抵抗体層を埋設した請求項１記載の液面検出センサ。 The liquid level detection sensor according to claim 1, wherein a heating resistor layer is embedded in the vicinity of a position where the liquid level detection resistance layer, the gas temperature detection resistance layer, and the liquid temperature detection resistance layer are provided on the insulating substrate.
JP2004272844A 2004-09-21 2004-09-21 Liquid level detecting sensor Pending JP2006090714A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007218601A (en) * 2006-02-14 2007-08-30 Matsushita Electric Ind Co Ltd Liquid level sensor
JP2019514014A (en) * 2016-04-21 2019-05-30 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． Liquid level detection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007218601A (en) * 2006-02-14 2007-08-30 Matsushita Electric Ind Co Ltd Liquid level sensor
JP2019514014A (en) * 2016-04-21 2019-05-30 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． Liquid level detection
US11046084B2 (en) 2016-04-21 2021-06-29 Hewlett-Packard Development Company, L.P. Liquid level sensing

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