JP2006083415A - Ion plating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To eliminate deficiencies that metal powder generated by etching a metallic shutter by ion beams causes improper operation of an ion gun unit, and degradation of the quality of a metal film deposited on a substrate. <P>SOLUTION: The ion plating device comprises a vacuum furnace 1, a substrate holder 2 which is arranged in the vacuum furnace to attachably/detachably support a plurality of substrates W by a supporting face, a vapor deposition substance evaporation unit 10 which is arranged in the vacuum furnace so as to be opposite to the supporting face of the substrate holder, an ion gun unit 20 arranged adjacent to the vapor deposition substance evaporation unit. The vapor deposition substance evaporation unit has a crucible in which the vapor deposition substance is held, and an electron gun which irradiates the vapor deposition substance on the crucible with electron beams so as to heat and vaporize the substance. The ion gun unit has an ion gun grid 21 for making the evaporation substance plasmatic by emitting ions toward the evaporation substance, and a shutter 22 to open/close an ion emission path from the ion gun grid, and the shutter 22 is formed of a non-conductive material. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an improvement of an ion-plating apparatus using an ion-assisted vapor deposition method, and more particularly to an ion-plating apparatus in which ions emitted from an ion gun collide with vaporized vapor deposition material to form a plasma and then adhere to a substrate. The present invention relates to an improvement in a shutter installed to control the amount of ions that continue to be emitted after the ion beam emission from the ion gun is turned off.

An ion-plating apparatus employing the ion assist method has a dome-shaped substrate holder disposed in the upper part of the vacuum furnace, and has a vapor deposition material evaporation means and an ion gun unit at appropriate positions in the furnace facing the substrate support surface of the substrate holder. It has a side-by-side configuration. In the ion assist method, plasma is generated by causing ions emitted from an ion gun to collide with the vapor deposition material evaporated from the vapor deposition material evaporation means to cause ionization. This ionized vapor deposition material is deposited on the substrate surface in an optimum state.
In Japanese Patent Laid-Open No. 9-256148, a plasma electron gun is installed on the side wall of a vacuum furnace, and ions emitted laterally from the electron gun into the furnace draw a parabola and are arranged in the upper part of the furnace. An ion-plating apparatus configured to reach a substrate surface set on a lower surface is disclosed. On the other hand, the vapor deposition material evaporation means is disposed on the bottom surface of the furnace so as to face the lower surface of the substrate holder, and the vapor deposition material is evaporated and reaches the substrate by the ion gun grid constituting the vapor deposition material evaporation means. . A shutter is disposed in the movement path of the evaporation substance from the vapor deposition substance so as to be openable and closable so that the movement of the evaporation substance to the substrate side can be turned on and off with good responsiveness. This is because even if the operation of the ion gun grid is turned off, evaporation of the vapor deposition material does not end immediately with good response, and it is necessary to physically prevent the evaporation material from rising using a shutter.
However, when the shutter is disposed, the shutter itself is etched when the shutter is positioned in the ion beam emission path from the ion gun grid, and its constituent material (usually stainless steel) becomes powder and floats in the vacuum furnace, and is then applied to the substrate. This adversely affects the quality of the film to be formed, and the quality of the film is deteriorated.
Next, in Japanese Patent Laid-Open No. 5-98430, an ion gun is inclined on the inner wall of the vacuum furnace so that the ion beam can reach the lower surface of the substrate holder directly, and immediately below the substrate holder. By providing the shutter, consideration is given to prevent the ion beam from etching the film formed on each substrate.
However, in practice, when the shutter is etched by the ion beam, the scraped powder drifts in the vacuum furnace, causing a problem that adversely affects the film quality on the substrate.

Next, FIG. 4A is a schematic configuration diagram of an ion-plating apparatus created by the present applicant. This apparatus is arranged in the vacuum furnace 100 and a plurality of substrates W on the support surface 101a. A substrate holder 101 that removably supports the substrate, a vapor deposition material evaporation unit 110 disposed in the vacuum furnace so as to face the support surface 101a of the substrate holder 101, and an ion gun unit that is disposed adjacent to the vapor deposition material evaporation unit 110. 120. The vapor deposition material evaporation unit 110 includes a crucible 111 holding the vapor deposition material S, an electron gun 112 that heats and evaporates the vapor deposition material S on the crucible by heating, and a vapor deposition material S and a support surface 101a of the substrate holder. And a shutter 113 that opens and closes the movement path of the evaporated deposition material S that is located between the two. The ion gun unit 120 includes an ion gun grid 121 that emits ions toward the moving path of the evaporating substance to convert the evaporating substance into plasma, and a shutter 122 that opens and closes the ion emitting path from the ion gun grid 121. Yes.
FIG. 4B is a schematic perspective view showing the configuration of the ion gun unit 120. A metal ion extraction grid 121a is arranged on the upper surface of the ion gun grid 121, and an ion beam is emitted from the ion extraction grid 121a in the direction of the arrow. Is emitted. Above the ion extraction grid 121a, a stainless steel shutter 122 for opening and closing an ion beam emission path is disposed.
The shutter 122 includes a disc-shaped shutter main body 122a made of a metal material such as stainless steel, and an arm 122b extending from the shutter main body 122a. The shutter main body 122a is horizontally moved around a rotation shaft 112c provided at the end of the arm. Rotate.
When the shutter 122 is moved onto the ion extraction grid 121a during ion plating and the ion beam emission path is shielded, the lower surface of the shutter 122 is sputtered by the ion beam to generate metal powder. When the sputtered metal powder falls on the ion extraction grid 121a, the grid is easily short-circuited by the metal powder. When ion plating is performed using such an ion extraction grid 121a, the quality of the film formed on the surface of the substrate W is degraded.
JP-A-9-256148 JP-A-5-98430

  The present invention has been made in view of the above-described conventional circumstances, and includes a vapor deposition material evaporation unit that emits an evaporated metal toward a substrate on a substrate holder, and an ion gun unit that irradiates the evaporated metal with an ion beam. An ion-plating apparatus in which ion beam emission is controlled to be turned on / off by a metal shutter provided on an ion extraction grid constituting the ion gun unit, and the ion extraction grid is shielded by the metal shutter. The metal shutter is etched by the ion beam during a period to generate metal powder, and this metal powder solves the malfunction of the ion gun unit and the deterioration of the quality of the metal film formed on the substrate. It is an object.

In order to solve the above-described problems, the invention of claim 1 is directed to a vacuum furnace, a substrate holder disposed in the vacuum furnace and detachably supporting a plurality of substrates on a support surface, and a support surface of the substrate holder. An ion plating apparatus comprising: a vapor deposition material evaporation unit disposed in a vacuum furnace; and an ion gun unit disposed adjacent to the vapor deposition material evaporation unit, wherein the vapor deposition material evaporation unit holds the vapor deposition material. An ion gun grid that emits ions toward the evaporating substance and turns the evaporating substance into plasma by irradiating the evaporation material on the crucible with an electron beam and evaporating the electron gun. And a shutter that opens and closes an ion emission path from the ion gun grid, and the shutter that constitutes the ion gun unit includes an ion beam from the ion gun grid. The shutter body that receives the shutter is made of a non-conductive material.
The invention of claim 2 is characterized in that, in claim 1, ceramic or quartz is used as the non-conductive material.

  In the present invention, plasma is generated by irradiating an ion beam from the ion gun unit to the evaporated metal emitted from the vapor deposition material evaporation unit, realizing high quality film formation on the substrate, and configuring the ion gun unit In an ion-plating apparatus in which ion beam emission is controlled to be turned on and off by a metal shutter provided on the ion extraction grid, the shutter body that receives the ion beam is made of a non-conductive material. Even if the shutter is etched by the ion beam during the period when the extraction grid is shielded, the powder is generated and the powder does not work properly, and the quality of the metal film deposited on the substrate is degraded. Will not be invited.

Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings.
FIG. 1 is a longitudinal sectional view showing a configuration of an ion plating apparatus according to an embodiment of the present invention.
The ion-plating apparatus includes a vacuum furnace 1, a substrate holder 2 disposed in the vacuum furnace 1 and detachably supporting a plurality of substrates W on a support surface 2 a, and a support surface 2 a of the substrate holder 2. A vapor deposition material evaporation unit 10 disposed in a vacuum furnace and an ion gun unit 20 disposed adjacent to the vapor deposition material evaporation unit 10 are provided.
The vapor deposition material evaporation unit 10 includes a crucible 11 that holds the vapor deposition material S, an electron gun 12 that heats and evaporates the vapor deposition material S on the crucible 11 by heating, an evaporation material S, and a support surface 2a of the substrate holder. And a shutter 13 that opens and closes the movement path of the evaporated deposition material S.
The ion gun unit 20 includes an ion gun grid 21 that emits ions toward the moving path of the evaporating substance to convert the evaporating substance into plasma, and a shutter 22 that opens and closes the ion emitting path from the ion gun grid 21. Yes.
The characteristic configuration of the present invention is that the ion beam shielding portion of the shutter 22 constituting the ion gun unit 20 is made of a non-conductive material. As the non-conductive material constituting the shutter 22, for example, ceramic is used.
2A and 2B are a perspective view and a cross-sectional view of an example of the shutter 22 of the present invention.
The shutter 22 includes a disc-shaped shutter body 25 made of a non-conductive material such as ceramic, an arm 26 made of a metal material having corrosion resistance such as stainless steel, and a ceramic body provided on one surface of the shutter body 25. Fastening means 28 such as bolts and nuts for connecting and integrating the shutter main body 25 and the distal end portion of the arm 26 via the contact plate 27 is provided. The shutter body 25 has an outer wall 25 b on the outer peripheral edge of a surface 25 a that faces the emission surface of the ion gun grid 21. By rotating the entire shutter around the base portion 26 a of the arm 26, the shutter body 25 can shield or open the beam from the ion gun grid 21.
In this embodiment, the shutter body 25 that receives the ion beam at the time of shielding is made of a non-conductive material such as ceramic, so that the non-conductive powder generated by etching the shutter body 25 by the ion beam is ion gun. There is no possibility of causing a short circuit by adhering to the ion extraction grid of the grid.

Next, FIGS. 3A, 3B, and 3C are a longitudinal sectional view, a configuration diagram of a ring portion, and an overall perspective view showing another configuration example of a shutter that constitutes the ion gun unit of the present invention.
The shutter 22 is fixed to the stainless steel arm 26 having a cross portion 26b near the tip by a fastening means 32 in a state where a ceramic disc 30 and a ceramic ring portion 31 are overlapped. It has a configuration. The disc 30 and the ring portion 31 constitute a shutter body.
That is, a fastening hole 26 b ′ is provided in the cross portion 26 b of the arm, and fastening holes 30 a and 31 a are provided at the same positions of the disk 30 and the ring portion 31, respectively. Then, bolts as fastening means 28 are inserted into the fastening holes 26b ', 30a, 31a and fastened with nuts to integrate these members.
Also in this embodiment, the shutter main bodies 30 and 31 that receive the ion beam at the time of shielding are made of a non-conductive material such as ceramic, so that the non-conductive powder generated by the ion beam etching the shutter main body can be obtained. There is no possibility of causing a short circuit by adhering to the ion extraction grid of the ion gun grid.
As the non-conductive material constituting the shutter body, quartz can be used in addition to ceramic, and high-quality film formation by ion plating is possible.

  As described above, according to the present invention, plasma is generated by irradiating the ion beam emitted from the vapor deposition material evaporation unit 10 with the ion beam from the ion gun unit 20 to form a metal film on the substrate W. In the ion-plating apparatus in which the ion beam emission is controlled to be turned on and off by the metal shutter provided on the ion extraction grid constituting the unit, the material of the shutter body that receives the ion beam is a non-conductive material. Even if the shutter is etched by the ion beam during the period in which the ion extraction grid is shielded by the shutter 22, even if the powder is generated, this powder is malfunctioning of the ion gun unit, the metal deposited on the substrate The film quality is not deteriorated.

It is a longitudinal section showing the composition of the ion plating device concerning one embodiment of the present invention. (A) And (b) is the perspective view and sectional drawing of an example of the shutter of this invention. (A) (b) And (c) is the longitudinal cross-sectional view which shows the other structural example of the shutter which comprises the ion gun unit of this invention, the block diagram of a ring part, and a whole perspective view. (A) is the schematic which shows the structure of the ion-plating apparatus (unknown) concerning the proposal of this applicant, (b) is a structure explanatory drawing of the ion gun unit containing a shutter.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Vacuum furnace, 2 Substrate holder, 2a Support surface, 10 Evaporation substance evaporation unit, 11 Crucible, 12 Electron gun, 13 Shutter, S Evaporation substance, 20 Ion gun unit, 21 Ion gun grid, 22 Shutter, 25 Shutter body, 26 Arm, 27 contact plate, 28 fastening means, 30 disc, 31 ring part.

Claims (2)

A vacuum furnace, a substrate holder disposed in the vacuum furnace and detachably supporting a plurality of substrates on a support surface, a vapor deposition material evaporation unit disposed in the vacuum furnace so as to face the support surface of the substrate holder, and vapor deposition An ion-plating apparatus comprising a substance evaporation unit and an ion gun unit disposed adjacent to the substance evaporation unit,
The vapor deposition material evaporation unit includes a crucible holding a vapor deposition material, and an electron gun that heats and evaporates the vapor deposition material by irradiating an electron beam,
The ion gun unit includes an ion gun grid that emits ions toward the evaporating substance to convert the evaporating substance into plasma, and a shutter that opens and closes an ion emission path from the ion gun grid,
The shutter which comprises the said ion gun unit comprised the shutter main body which receives the ion beam from an ion gun grid with the nonelectroconductive material, The ion plating apparatus characterized by the above-mentioned.   The ion plating apparatus according to claim 1, wherein ceramic or quartz is used as the non-conductive material.

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