JP2006082038A - Manufacturing method for thin-film laminated structure, thin-film laminated structure, function element, manufacturing method for function element, and manufacturing device of thin-film laminated structure and heterostructure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin-film laminated structure suitable for using for manufacture of a high-functional function element, which can make the best possible use of advantages of a bottom up system and a top down system, and to provide a manufacturing method therefor. <P>SOLUTION: The integrated thin-film laminated structure is manufactured by depositing thin films in a non-reciprocal process while rotating a cylindrical or polygonal column substrate 53. The thickness of the thin film is, for example, 1,000 nm or less. Deposition of the thin films is performed by the LB (Langmuir Brojet) method or an alternating adsorption method. Monomolecular films are deposited as the thin films in the LB method. A functional element such as a memory element and a solar cell is constituted using the thin-film laminated structure. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a thin film multilayer structure, a thin film multilayer structure, a functional element, a method for manufacturing a functional element, a manufacturing apparatus for a thin film multilayer structure, and a heterostructure, for example, a bottom-up system and a top-down system It is related to the integration with other systems.

Conventional functional elements, as represented by semiconductor integrated circuits, are mainly manufactured by a top-down approach based on microfabrication. In particular, with regard to semiconductor devices, a huge semiconductor electronics industry based on this top-down approach has been developed through the invention of transistors by Bardeen et al. And the invention of semiconductor integrated circuits by Noyce et al. ing.
On the other hand, the top-down approach has begun to show limits in various respects, and as a technique for overcoming this limit, a bottom-up approach by self-organization has recently attracted attention and has been actively studied.
It has been reported that both the cell system and the nervous system expand and grow continuously with time in an autonomous and distributed manner at each location (Non-Patent Document 1), and this belongs to the bottom-up category.
RRLlinas, The Biology of the Brain, p.94, WHFreeman & Company, NY, 1989

Also, in the bottom-up, each part forms a structure arbitrarily according to local rules due to autonomous distributed locality. There are four types of structure formation (constant, periodic [nested], functional structure, and random). It has been shown using a cellular automaton (Non-Patent Document 2).
S. Wolfram, A New Kind of Science, pp.51-81, Wolfram Media Inc., IL, USA, 2002

In addition, based on the constant drift velocity, Time Projection Chamber (TPC) is an elementary particle detector that uses secondary electrons that move continuously with time (electrons generated along the track of elementary particles). Has been reported by the present inventors (Non-patent Document 3).
P. Nemethy, P. Oddone, N. Toge, and A. Ishibashi, Nuclear Instruments and Methods 212 (1983) 273-280

In addition, useful and interesting physical phenomena such as the surface enhancement effect by plasmon excitation observed in the nanospace formed by the metal interface, especially in the local space between the two-dimensional sample plane and the probe facing it, have been observed. (Non-Patent Document 4).
Futama et al., Spectroscopical Society of Japan, 2002 Spring Lecture Symposium “Frontiers of Microvibration Spectroscopy”, pp.20-23

Further, it has been reported by the present inventor that a single atomic layer resolution can be obtained in the growth direction in semiconductor growth using metal organic chemical vapor deposition (MOCVD) (Non-patent Document 5).
A.Ishibashi, MOCVD-grown Atomic Layer Superlattices, Spectroscopy of Semiconductor Microstructures, eds.G. Fasol, A. Fasolino, P. Lugli, Plenum Press, NY, 1989

The details of the mechanism are also known in electrochemical growth (Non-patent Document 6).
Shiro Haruyama, Electrochemistry for Surface Engineers p.112, Maruzen, Tokyo, 2001

Also, in the electrochemical field, the object to be coated and the counter electrode are immersed in a solution in which a neutralized polymer electrolyte is dispersed in water, and a direct current is applied between the object to be coated and the counter electrode to It is known that a polymer electrolyte can be deposited (Non-patent Document 7).
Supervised by Atsuo Yamaoka, “New Development of Practical Polymer Resist Materials—Application Development as Photopolymers”, Chapter 6, CMC Publishing, 1996

In addition, a structure in which a molecular element is sandwiched between crossed portions of a metal wire having a width of about 40 nm has been reported (Non-Patent Document 8).
Y. Chen, DAA Ohlberg, X. Li, DR Stewart, RS Williams, JO Jeppesen, KA Nielsen, JF Stoddart, DL Olynick, and E. Anderson, Nanoscale molecular switch devices fabricated by imprint lithography, Appl. Phys. Lett. 82 (2003) 1610

Further, as another example of the bottom-up category, a structure formation method and a neuron growth method using self-organized progressive hierarchical acquisition (SOPHIA) have been proposed (Non-Patent Document 9, 10) In addition, there is morphological expression (gene-derived structure) by gene control that is generally found in life and biological systems. On the other hand, other examples of the top-down category include micro electromechanical systems (MEMS) systems and micro chemical reactors, and generally the formation of structures by the human brain (brain-derived structures) as homo-fabrics. (Non-patent Document 11).
JP 2000-216499 A International Publication No. 02/35616 Pamphlet Takeshi Yoro, “Theory of Brains”, Seidosha, 1989

Moreover, what is called a nano bridge (NanoBridge) structure using metal fine cross-linking based on metal atom movement in a solid electrolyte is known (Non-patent Document 12).
[Search February 18, 2004], Internet <URL: http://www.nec.co.jp/press/en/0402/1801-01.htm>

In addition, the frequency dependence of the magnetic impedance of the spin tunnel junction has been reported (Non-patent Document 13).
Jpn. J. Appl. Phys. Vol.42 (2003) pp.1246-1249

In addition, a spin tunnel junction element is connected to a part of the feedback loop between the transistor and the LC circuit in the oscillation circuit composed of the transistor and the LC circuit, and a switching means is provided, and the reading frequency of the magnetic data is increased by the switching frequency of the switching means. There has been proposed a magnetic recording apparatus that uses a magnetic sensor defined as a reproducing magnetic head (Patent Document 1).
Japanese Patent No. 3557442

Further, as a method for forming a cumulative film (LB film) by the Langmuir-Blodgett method (LB method), a vertical immersion method (Non-Patent Documents 14 to 16) and a cylindrical rotation method (Non-Patent Document 17 and Patent Document 2) are known. It has been.
"Practical technology to make good LB films" by Ishii Ikuo Tokyo: Kyoritsu Shuppan (1989) (Surface and Thin Film Molecular Design Series / Japan Surface Science Society; 9) p1-16 “Interface Handbook” supervised by Yasuhiro Iwasawa et al. Tokyo: NTS (2001) p29-35 "Thin Film Application Handbook" Supervised by Shunichi Gonda: Yasunori Taga, Toshihisa Tsukada, Takashi Hirao Tokyo: NTS (1995) p508-514 Thin Solid Films, 115 (1984) pp. 85-88 British Patent Application No. 2146653

In addition, as a method of continuously accumulating the LB film, a non-reciprocal method such as an air flow, a water flow, or a gradient is used in the process of pressing the monomolecular film against the substrate with a constant surface pressure. Is known (Patent Documents 3 to 5).
Japanese Patent No. 3262472 Japanese Patent Laid-Open No. 11-42455 JP-A-8-103718

In addition, since the LB film has insufficient heat resistance and mechanical strength, it has been pointed out that a large LB film stack cannot be produced (Non-patent Documents 18 and 19).
“Interface Handbook” supervised by Yasuhiro Iwasawa and others Tokyo: NTS (2001) p790 [Search August 5, 2004], Internet <URL: http://www.appi.keio.ac.jp/shiratori/seimei/research/selfasmbly/selfasmbly.html>

An alternate adsorption method is also known as a method for forming a cumulative film (Non-Patent Documents 20 and 21).
"Interface Handbook" supervised by Yasuhiro Iwasawa and others Tokyo: NTS (2001) p33-35 "Thin Film Application Handbook" Supervised by Shunichi Gonda: Yasunori Taga, Toshihisa Tsukada, Takashi Hirao Tokyo: NTS (1995) p520-524

Various materials for the LB film are known (for example, Patent Documents 6 and 7).
Japanese Patent No. 2731171 JP-A-6-132517

In addition, formation of an oriented thin film by a friction transfer method has been reported (Non-Patent Document 22).
Nature 352 (1991) pp.414-417

If the above-mentioned top-down system and bottom-up system can be integrated, it is considered that the advantages of both can be utilized to the maximum, and it is possible to realize a new functional element that has not existed before. As far as we know, no effective concrete method has been proposed so far.
Accordingly, the problem to be solved by the present invention is to provide a high-functional device capable of making the most of the advantages of the bottom-up system and the top-down system represented by silicon LSI, and a method for manufacturing the same. .
Another problem to be solved by the present invention is to provide a thin film laminated structure suitable for use in the production of the functional element, a method for producing the same, and a production apparatus.
Still another problem to be solved by the present invention is to provide a heterostructure suitable for use in various functional elements.
The above and other problems will become apparent from the following description of the present specification with reference to the accompanying drawings.

In order to solve the above-described problems of the prior art, the present inventors have conducted intensive studies. The outline will be described below.
As is well known, two-dimensional patterning using photolithography is frequently used in the manufacture of semiconductor devices by a top-down approach. FIG. 1A shows a MOS LSI (for example, a memory) as an example of a semiconductor device. As shown in FIG. 1A, two-dimensional patterning typically involves exchanging spatially lateral information in a semiconductor substrate using UV (ultraviolet), EUV (extreme ultraviolet) photolithography, or electron beam lithography. Rather, it is performed at each time (at a time when each elemental process such as batch exposure, development, and etching is performed, instantaneously at the time, that is, one point at a time on the time axis). That is, a major feature of two-dimensional patterning is that time is discontinuously and sporadically woven.

In the two-dimensional patterning, since the structure is determined by batch exposure using a photomask with respect to the photoresist, there is no exchange of lateral information between the structures in the structure formation. That is, causality exists mainly in out-of-plane causality rather than in-plane interaction. In the two-dimensional patterning, as shown in FIG. 1B, in the presence of a global rule, the block structure is taken, and there is a specific direction for each block. Become macroscopically anisotropic. In other words, the structure is determined by external factors, and can be said to be just a real space representation of the circuit design drawing. The amount of change in the structure on the substrate is a pulse train having a δ function with respect to time.
Thus, the top-down system is an anisotropic (directional) structure in which time is projected in a non-continuous manner. Now, when the system has time-continuous projectability or spatial isotropy, it is marked with ↑, and when the system has time-noncontinuous projection or spatial anisotropy, it is marked with ↓, respectively. If it is written as (temporal projection, spatial orientation) = (↑, ↑), the top-down system has temporal discontinuity and spatial anisotropy. , (Time projection, spatial orientation) = (↓, ↓).

On the other hand, as already mentioned, another trend that has recently been recognized as important is the bottom-up system. As such a system, for example, there is an inorganic self-organization system represented by semiconductor quantum dots. In the culture of biological cells, cell and nervous system growth as shown in FIG. 2A can be mentioned. In FIG. 2A, the code | symbol 11 shows a biological tissue body, 12 shows a nerve, 13 shows a cell. As described above, the cell system and the nervous system both expand and grow continuously with time in an autonomous and distributed manner at each location (Non-Patent Document 1).
As shown in FIG. 2B, in the bottom-up, time is continuously projected because each part arbitrarily forms a structure according to a local rule by autonomous distributed locality. At this time, for example, in a bottom-up structure (for example, bladder epithelial cells (FIG. 2C), etc.) having the same two-dimensional extent as in FIG. 1A, the causality is in-plane causality. As S. Wolfram shows using cellular automata, there are four types of structure I to IV (constant, periodic [nested], functional structure, random) (Non-Patent Document 2). . Further, in the bottom-up system, since the local rules are obeyed, there is no such special direction as a whole, so that the spatial structure is generally isotropic. In this case, the overall structure is determined from intrinsic factors according to the generation rule. The amount of change in structure is a continuous line that is smooth with respect to time.
Thus, since the bottom-up system is an isotropic (non-directional) structure in which time is continuously projected, according to the above notation (temporal projection, spatial orientation) = (↑, ↑).
By the way, the living body successfully entangles the bottom-up property based on the body organization controlled by genes and the top-down property based on the control by the brain, and embodies their integration as a whole. More specifically, the integration of bottom-up in body tissue formation and top-down by the brain is performed by attaching the nervous system to cells during the growth of individuals from fertilized eggs through a long evolutionary process. ing.
That is, as shown in FIG. 2B, in the aggregate of cells in which bottom-up has occurred, it is possible to access each place by accompanying a communication network called the nervous system. Control and information extraction are performed. It is essential that living organisms as self-organized bodies have this associated nervous system.

On the other hand, in order to operate the system effectively, the control system must perform information transmission and control with a much smaller “volume” than the controlled system. Therefore, it can be said that the biological system has a 1 + α (however, 0 <α <1) fractal dimension string as a nervous system with respect to a three-dimensional cell system. The dimension of the transmission / control system must always be smaller than the dimension of the cell system. This nervous system is stretched three-dimensionally in the living body.
In this way, the living body passes through a bottom-up self-similar low-dimensional structure called a nervous system onto which the elapsed time from the development of a fertilized egg is continuously projected, so to speak, a cell line 3 It controls and integrates another kind of bottom-up system with dimensionality.

On the other hand, in addition to the system of the living body itself as described above, in an artificial system, it is not a rigid solid system, but in a minimal setup of gas filled in a drum-like container, to the spatial coordinates of the elapsed time As shown in FIG. 3, there is a TPC as shown in FIG. 3 as a system for fully recognizing a spatial address in three dimensions using the continuous projection of the above, and the inventors have reported its development and excellent performance (non- Patent Document 3).
This TPC will be described in detail. As shown in FIG. 3, the electron beam 22 and the positron beam 23 incident from both ends of a cylindrical TPC 21 containing gas collide with each other to generate new elementary particles 24 in a jet shape. To do. The electrons 25 generated along the tracks of the elementary particles 24 reach the two-dimensional detectors called sectors 26 at both ends of the TPC 21 at a constant drift speed in the axial direction. The position in the axial direction, i.e., the z-direction, can be found from the elapsed time until reaching the sector 26 at that time. FIG. 4 is an enlarged view of a portion of the sector 26. Reference numeral 26a denotes a sense wire, 26b denotes a grid, 26c denotes a pad, and 26d denotes a line of electric force. As shown in FIG. 4, the electrons cause avalanche in the sense wire 26a portion of the sector 26, and thereby an electric signal is applied to the sense wire 26a and the pad 26c existing below the sense wire 26a. I want. In this way, the three-dimensional position is obtained, but the time information is projected on the space in the z direction as described above because the electron drift velocity is constant. Because of this feature, the system is called a time projection chamber, which is an example that demonstrates the usefulness of this concept of time projection into space.

  In the sector 26, the state between the sense wire 26a and the pad 26c is read out. That is, a kind of information reading is performed, and it can be considered that local addressing is performed. For example, the same effect can be obtained even if wires are brought close to each other and crossed instead of the pad 26c. In FIG. 4, the state of the electric field concentration in the vicinity of the microelectrode called the sense wire 26a is simply shown. A thin sense wire 26a is desirable to generate a strong electric field. Thus, TPC has two important functions: projection of time into space and electric field concentration (and accompanying signal amplification) at the intersection of thin structures. It has the following features.

Now, silicon LSIs that show development along the road map represented by Moore's law are representative of so-called top-down devices and systems. However, their size, operating power (environmental temperature) ), As well as the limits on manufacturing equipment investment, but no fundamental solution has been found, and it has long been feared that the limit will be reached sooner or later.
Although the bottom-up is screamed as an antithesis for the top-down type, the biggest difficulty is that individual addresses cannot be used.
At the nanoscale, biological and non-biological functions can be reduced to the same interaction mechanism (ultimately electromagnetic interaction), so remarkable nanotechnology has integrated non-biological and biological functions. However, it has not yet reached full-scale practical use.

  In other words, there are two methods for producing a microstructure on the extension line of the prior art, one using EUV or electron beam lithography, or the so-called bottom-up method using molecules. There is no device system to find. According to the notation regarding time-continuous projectability and spatial isotropy described above, bottom-up (time projection, spatial orientation) = (↑, ↑) system and top-down (time projection, space (Direction) = (↓, ↓) The system is completely opposite, that is, ↑ vs. ↓, so it is possible to find a contact point between them just as water and oil are incompatible. It ’s difficult.

Connecting the nanoscale world to the macroscopic world should be avoided when trying to bring out new synergies by connecting new effects and functions that will be obtained in the nanotechnology field to the existing silicon-based IT infrastructure structure. It is a barrier that cannot be passed. However, it is still believed that no one has been successful enough to connect.
The bottom-up material system, which is expected to have high efficacy through nanotechnology, has not yet been put into full-scale practical use because there is no mechanism for individual addressing at the nanoscale.

In other words, artificial bottom-up systems have not succeeded in providing a control line associated with the bottom-up subject corresponding to the nerve connecting the brain and body tissue of the living body. It can be said that the connection of the system has been difficult so far.
There is the above-mentioned TPC as a similar and non-similar system that partially satisfies the characteristics of the nervous system of the living body that grows with time and stretches the structure three-dimensionally and accesses it. It has two important features: time continuous projection based on constant electron drift velocity and three-dimensional access to the entire system based on signal amplification at the intersection of thin conductive structures, Since this TPC contains gas inside, it is not a complete solid state device.

As described above, conventionally, patterning by collective exposure as shown in FIG. 1A is used for manufacturing a two-dimensional structure such as a semiconductor integrated circuit (for example, a memory) having a top-down system. In this case, the resolution is required in two directions, x and y. The accuracy is the highest resolution at present, about 70 nm at the production level, and several nanometers for the laboratory champion data. It has not been realized as a whole.
In addition, useful and interesting physical phenomena such as a surface enhancement effect by plasmon excitation observed in a local space between a two-dimensional sample plane and a probe facing the plane are observed (Non-patent Document 4). There is no system in which nanostructures that can take on such physical phenomena are multiplexed in parallel over a bulk size of, for example, mm to cm. That is, there is no substance that forms a nano-discretized bulk size structure that has a dense structure on the nano scale and can be accessed individually.

The solution to the above problem is to say, a connected intermediate layer with the properties of soap (amphipathic) that connects water and oil, or qualities that correspond to the nervous system that connects the cell system and the brain system. Alternatively, it can be achieved by preparing a connection platform, and in particular, it can be achieved by taking an arrangement in which a bottom-up system and a top-down system are connected by an artificial nervous system.
More specifically, between the bottom-up system (time projection, spatial orientation) = (↑, ↑) and the top-down system (time projection, spatial orientation) = (↓, ↓) This can be achieved by inserting a system having the property of (time projection, spatial orientation) = (↑, ↓) as the structure 3. For this purpose, an accompanying line corresponding to a nerve is provided in an artificial bottom-up system. Alternatively, a self-organizing system is grown beside an adjoining system provided in advance.

As shown in FIG. 5, the growth of the one-dimensional superlattice 31 is caused to occur as a projection of time. Here, since the spatial coordinates in the growth direction of the one-dimensional superlattice 31 directly represent the flow of time, it can be said that this is a system in which time is continuously projected onto the spatial structure. By using a controlled growth rate, preferably a constant growth rate, the spatial structure is continuously controlled by time (coordinates). In addition, the presence of a special orientation called the growth direction can make the spatial structure generally anisotropic.
Needless to say, the one-dimensional superlattice 31 can also be obtained as a concentric superlattice or a structure obtained by cutting out a part of a concentric heteromaterial alternating laminate.

  Further, the one-dimensional superlattice 31 grown as described above is thinned. The significance lies in the following points. 6A shows a one-dimensional superlattice 31, FIG. 6B shows a superlattice wire 32 obtained by wire-forming the one-dimensional superlattice 31, and FIG. 6C shows a superlattice flake 33 obtained by thinning the one-dimensional superlattice 31. As shown in FIGS. 6A, 6B, and 6C, the one-dimensional superlattice 31 has a structure in which the time t is woven in the growth direction, but the time (= one point on the axis in the growth direction) is accessed. When the distance r is specified, the in-plane coordinates are infinite (FIG. 6A). When the one-dimensional superlattice 31 is wired, time (= one point on the axis in the growth direction) is specified. However, since the portion is a quantum dot and cannot be accessed from other places (FIG. 6B), when the one-dimensional superlattice 31 is thinned, the position can be uniquely determined, and , R, which are different from each other, are uniquely determined and can be accessed through the horizontal line (FIG. 6C). Thus, by thinning the one-dimensional superlattice 31, a system having the above-mentioned properties (↑, ↓) can be realized.

  Further, as shown in FIG. 7, the above-described two-dimensional superlattice flake 33 is superposed on another similar superlattice flake 34 with a 90 ° azimuth deviation from each other. Two layers of superlattice flakes restore pseudo (discrete) isotropic properties, while at the same time forming a two-dimensional lattice with two layers of superlattices to access space discretely but densely in nano size. A mechanism can be created, and with this, it is possible to artificially assign an equivalent to the nervous system individually addressing an arbitrary bottom-up system which is continuous as a whole.

The structure shown in FIG. 7 is an isotropic (non-directional) structure in which the bottom-up system shown in FIGS. 2A and 2B is continuously projected (this is now referred to as the first structure). The top-down system shown in FIGS. 1A and 1B has an anisotropic (directional) structure in which time is projected discontinuously (this is now referred to as a second structure). In contrast, it is an anisotropic (directional) structure (this is now the third structure) that is projected in time, with just the intermediate properties, and is a bottom-up system. And its continuous-time property, and its top-down system and its spatial anisotropy. For this reason, this third structure has a good affinity for both the bottom-up system and the top-down system, and has the property of time projection and spatial isotropy, that is, (↑, ↑). It is possible to connect the structures of the extreme extremes of time discontinuity projection and spatial anisotropy, that is, (↓, ↓) properties (that is why they have not been combined so far).
In addition, as shown in FIG. 7, the third structure restores discrete isotropicity (pseudoisotropy) by superimposing two superlattice flakes, and is two-dimensionally bottom-up. Fully accessible.

Furthermore, as described above, conventionally, patterning by batch exposure is used in a two-dimensional structure such as a semiconductor integrated circuit forming a top-down system, and resolution is required in two directions of x and y, and the accuracy is currently In contrast to the highest resolution of about several nanometers, the portion of the third structure described above can have atomic layer resolution because it is formed by a method of projecting time into space. For this reason, even if the bottom-up portion is composed of a unit having a size of about a molecule, individual access to the unit is possible.
Attempts have been made to use self-organization as a technique to overcome the resolution limit of conventional lithography. Actually, for example, in a two-dimensional memory using a quantum dot or a single molecule formed by self-organization, it is possible to arrange with an accuracy of several orders of magnitude. However, there is no method for independent access to these self-organized microstructures. Even if an attempt is made to access from the outside with a metal wiring or the like, as described above, the resolution is not sufficient when the metal wiring is formed by lithography.

  In other words, the conventional lithography used in the top-down system has not achieved a resolution of one atomic layer order, and if only the bottom-up was used (the resolution was still not), independent access was impossible. However, like the superlattice thin piece 33 described above, the growth rate of the one-dimensional superlattice is controlled to project time into space, and the structure is made thin to reduce the degree of freedom of directionality to the minimum. Thus, the top-down system and the bottom-up system can be connected complementarily, and both the resolution of one atomic layer order and independent access can be achieved. As described above, with respect to the resolution, as shown in FIG. 8, the present inventor has shown that the resolution of one atomic layer can be obtained in the growth direction in the growth of the AlAs / GaAs two atomic layer superlattice by the MOCVD method. (Non-Patent Document 5). Here, FIG. 8A, FIG. 8B, and FIG. 8C show a dark field image, a lattice image, and a diffraction pattern by a transmission electron microscope (TEM), respectively.

As already described, the growth mechanism of MOCVD consists essentially of surface diffusion and kink growth, and is the same as the electrochemical growth mechanism shown in FIG. 9 (Non-patent Document 6). Therefore, the growth of the one-dimensional superlattice can be performed as a function of time using an electrochemical technique. That is, a one-dimensional superlattice that directly represents a continuous flow of time as shown in FIG. 6A can be grown by using an electrochemical method, and the spatial structure can be controlled by continuous time coordinates. it can. Compared with the control of the spatial structure at discrete points on the time axis such as batch exposure, development, and etching shown in FIGS. 1A and 1B, the resolution can be improved by an order of magnitude or more.
For this reason, according to the above method, a fine, discrete and dense repetitive structure, for example, a conductive strip / dielectric repetitive structure such as a metal can be formed with an atomic layer accuracy.

  When the above third structure is formed with such a conductor strip / dielectric repeating structure, conductor strips 41 and 42 as shown in FIG. 10C intersect so that their surfaces face each other. As shown in FIG. 10B, the conductor strips 41 and 42 intersect with each other so that their knife edges face each other, and the area of the intersection is very small. Arrangement is desirable. In the case of FIG. 10B, the thickness of the conductor strips 41 and 42, that is, the edge width is, for example, on the order of 1 to 10 nm. At this time, the thickness of the dielectric separating the conductor strip 41 or the conductor strip 42 is, for example, 10 to 100 nm. It is an order. In FIG. 10B, reference numeral 45 indicates a pseudo 0-dimensional space whose size of one side is on the order of 1 to 10 nm, for example.

The reason why the arrangement shown in FIG. 10B is desirable is as follows.
FIG. 10A shows the arrangement of an SPM (surface probe microscope) in which a surface enhancement effect by a local electromagnetic field is confirmed, and the tip of the probe 43 is close to the surface 44 (two-dimensional surface) of the sample. Hereinafter, the spatial distribution of the potential in the nanospace is calculated for the case shown in FIG. 10A and the case shown in FIG. 10B.

In the case of FIG. 10A, it can be calculated as a case where the probes are facing each other in consideration of the reflection effect. The distance between the tips of the probe at this time and the interval between the conductor strip 41 and the conductor strip 42 at the intersection in FIG. 10B are the same for comparison. Now, if there is a metallic structure in vacuum and the potential of the metal part is set from the outside, the space charge is zero, so the Poisson equation to be solved in this case becomes simple and the Laplace equation
(∂ ² / ∂x ² + ∂ ² / ∂y ² + ∂ ² / ∂z ² ) φ (x, y, z) = 0 (1)
It becomes. When the space is cut into meshes (interval Δ) and converted into a differential equation, φ (i, j, k)
∂φ (i, j, k) / ∂x = (φ (i, j, k) -φ (i-1, j, k)) / Δ
∂φ (i, j, k) / ∂y = (φ (i, j, k) -φ (i, j-1, k)) / Δ
∂φ (i, j, k) / ∂z = (φ (i, j, k) -φ (i, j, k-1)) / Δ
It becomes. For example, for x,
∂ ² φ / ∂x ² = (φ '(i + 1, j, k)-φ' (i, j, k)) / Δ
= ((φ (i + 1, j, k) -φ (i, j, k)) / Δ- (φ (i, j, k) -φ (i-1, j, k)) / Δ) / Δ
= ((φ (i + 1, j, k) + φ (i-1, j, k) -2φ (i, j, k)) / Δ ²
It becomes. Similarly, when ∂ ² φ / ∂y ² and ∂ ² φ / ∂z ² are obtained and substituted into the equation (1), 0 = ((φ (i + 1, j, k) + φ (i-1, j, k) -2φ (i, j, k)) / Δ ²
+ ((φ (i, j + 1, k) + φ (i, j-1, k) -2φ (i, j, k)) / Δ ² + ((φ (i, j, k + 1) + φ (i, j, k-1) -2 φ (i, j, k)) / Δ ²
It becomes. In summary, φ (i, j, k) = (φ (i + 1, j, k) + φ (i−1, j, k) + (φ (i, j + 1, k) + φ ( i, j-1, k)
+ (Φ (i, j, k + 1) + φ (i, j, k-1)) / 6 (2)
The solution of the Laplace equation is obtained by turning the recurrence formula.

When the boundary condition in the arrangement of FIG. 10A is entered and calculation is performed using equation (2), the potential distributions shown in FIGS. 11 to 14 are obtained. Here, each number (1-12) in FIGS. 11-14 represents the spatial coordinates between the tips of the probe, and 0 and 12 are the positions of the tips of the probe. 11A to 14, the z axis is fixed at a full scale 1000 (arbitrary unit), and in each b diagram, the vertical axis is drawn by scaling according to the magnitude of the potential.
Similarly, in the case of FIG. 10B, that is, the case where the knife edges of the conductor strips 41 and 42 are opposed to each other, the potential distribution shown in FIGS. 15 to 18 is obtained. 15 to 18, as described above, each number represents a spatial coordinate between the knife edges of the conductor strips 41 and 42, and 0 and 12 are the positions of the tips of the knife edges. 15A to 18B, the z axis is fixed at a full scale 1000 (arbitrary unit), and in each b figure, the vertical axis is scaled by the magnitude of the potential. Is drawn.

  When comparing FIGS. 11 to 14 and FIGS. 15 to 18, in the case shown in FIG. 10A and the case shown in FIG. It can be seen that there is a change in potential, that is, a steep electric field change, but the amount of change from number 5 in FIG. 12 to number 7 in FIG. 13 and from number 5 in FIG. 16 to number 7 in FIG. Comparing with the amount of change, even when the same potential is applied, the knife edges of the conductor strips 41 and 42 are opposed to each other in a cross shape rather than when the tips of the probes are opposed to each other. This indicates that the electric field change per unit length is larger, and a strong quantum effect can be extracted.

As shown in FIGS. 11 to 14, the potential between the opposing probes is symmetrical in the direction of the axis connecting the tips of the two probes (the vertical direction in the figure), and is rotationally symmetric around the axis. On the other hand, in the cross arrangement of the knife edges, as shown in FIG. 16 and FIG. That is, it is asymmetrical in the vertical direction, and has two-fold rotational symmetry and invariance to a symmetrical operation of π / 4 rotation + vertical inversion. That is, it has D _2d symmetry. These can be good tools for controlling the arrangement and charge symmetry of molecules sandwiched between crosses to derive new quantum functions. Further, by shifting the crossing angle from 90 degrees, it is possible to break down to symmetry such as D ₂ , C _2v , C ₂ .

Further, in the structure shown in FIG. 6C or FIG. 7, the one-dimensional superlattice 31 is a periodic structure of a conductor layer and a dielectric layer, and the thickness of the conductor layer is made sufficiently small, so that FIG. It can be seen that the structure shown and the potential distribution shown in FIGS.
Thereby, in said 3rd structure, the site which causes a surface enhancement effect can be arranged in super multiple parallel. In this case, unlike the case of a multiple parallel surface probe having a structure in which a large number of heads of a surface probe microscope are arranged, it is a great merit that there is no moving part. Further, by using a superlattice flake having a thickness of, for example, 1 to 100 μm, the conductor strips 41 and 42 can be made extremely thin, and the electric conductivity of the conductor strips 41 and 42 can be reduced. Flatness can be maintained.

For example, when a bottom-up material is provided in the pseudo zero-dimensional space 45 at the intersection of the conductor strips 41 and 42 shown in FIG. 10B, the conductor strips 41 and 42 forming the x, y intersection system in the third structure are artificially formed. As a nerve line, for example, a conventional silicon LSI system provided outside the third structure and its bottom-up material can be connected to obtain a new function (for example, Patent Documents 9 and 10).
Since the conductor strips 41 and 42, more generally the conductive lines, use electrons as a medium, the speed at which the interaction is transmitted is extremely high. On the other hand, changes in the bottom-up region, particularly changes in the arrangement of atoms (configuration) (such as changes in the position of functional groups) have a large inertial mass, so the speed is considerably slow. There is usually a difference of one or more digits (generally several digits) between the speeds of the two. Therefore, the structure shown in FIG. 19 which is an example of realizing the arrangement conceptually shown in FIG. 7 using real materials is a bulk-sized space-time system discretized at the nanoscale, and at the intersection of each conductive line. The sandwiched atoms / molecules and the electrons (or holes) flowing through the line can be treated adiabatically. That is, FIG. 19 shows a superposition of two superlattice slices made of a periodic structure of metal and dielectric in a state where their orientations are deviated from each other by 90 degrees, and the intersection of conductor strips 41 and 42 made of metal. The bottom-up material is provided in the pseudo zero-dimensional space 45 of the part. The conductor strip 41 is separated by a dielectric layer 46, and the conductor strip 42 is separated by a dielectric layer 47. FIG. 19 shows an example of the size of each part corresponding to a storage density of 1 Tb / in ² when this system is a memory.

  In general, the interaction between atomic groups and molecular groups is transmitted in a near-field manner, so that a trap stands through the nearest neighbor. However, in the system shown in FIG. 19, exchange occurs instantaneously, that is, in a remote action for atoms / molecules through the conductive lines. Since it is one of the essences of the critical state that the system “knows” every corner, the system shown in FIG. 19 does not exist in conventional materials (for example, a cellular automaton (discrete system versus continuous system) For example, it can be said that it is a new substance close to the “critical state” as in Non-Patent Document 2). New aspects of nanostructured physics can be revealed through modulated self-organized critical phenomena and spontaneous symmetry breaking, which are expected to appear in this system. That is, by obtaining nanostructures that can be addressed locally and individually in a global size, it is possible to connect the microscopic world and the macroscopic world and to create new quantum functions.

  On the other hand, the LB method is conventionally known as a technique for forming a thin film laminated structure. In the conventional general LB method, water is applied to the trough, a monomolecular film is spread on a stationary water surface, and the relative velocity component in the horizontal direction (direction parallel to the water surface) between the water and the substrate. Under the condition of zero, the monomolecular film is repeatedly scraped on the substrate while pushing the monomolecular film at a constant surface pressure. This method is accompanied by a double alternating (reciprocal) process in the sense that the process of scooping the substrate is repeated and the process of pressing the monomolecular film onto the substrate at a constant surface pressure. Yes.

As a typical example of the LB method, there is a vertical dipping method (Non-Patent Documents 14 to 16). This vertical immersion method is a method of accumulating monomolecular films on a substrate one by one while vertically moving the substrate up and down with respect to water in which the monomolecular film is spread on the water surface. An example in the case of using a hydrophilic substrate is shown in FIG. In this method, as shown in FIG. 20A, the monomolecular film 302 is spread on the water surface in a state where the substrate 301 is previously submerged in water, and is compressed by a barrier (not shown), and then the surface pressure is kept constant. While maintaining, the substrate 301 is slowly raised as indicated by an arrow. At this time, when the hydrophilic group 302 a of the monomolecular film 302 is bonded to the surface of the substrate 301, the first monomolecular film 302 is transferred onto the substrate 301. Next, as shown in FIG. 20B, when the substrate 301 on which the first monolayer 302 is thus formed is slowly lowered as indicated by the arrow, the hydrophobic groups 302b of the first monolayer 302 and the water surface Are bonded to each other, and the second monolayer 302 is accumulated on the first monolayer 302. By repeating this process, a multilayer cumulative film is formed. The accumulation of the film in both the descending and ascending processes is called Y accumulation, and the film formed in this process is called the Y film.
Here, there are generally three ways of transferring the film depending on the combination of the substrate and the film substance. One is the Y accumulation described above, and the remaining two are the X accumulation accumulated only when the film is lowered and the Z accumulation accumulated only when the film is raised. A film made by X accumulation is called an X film, and a film made by Z accumulation is called a Z film. These X accumulation, Y accumulation, and Z accumulation are shown in FIGS.

There is also a cylindrical rotation method as an example of the LB method (Non-patent Document 17, Patent Document 2). In this cylindrical rotation method, the accumulation method of monomolecular films differs depending on the direction of rotation. Generally, depending on the substrate rotation method and the nature of the substrate or single molecule, three types of accumulation are performed in the same manner as in the vertical immersion method. These are shown in FIGS. 22A corresponds to FIG. 21C, FIG. 22B corresponds to FIG. 21A, and FIG. 22C corresponds to FIG. 21B.
As can be seen from the above, the conventional vertical dipping method described above has a process of pressing the monomolecular film against the substrate at a constant surface pressure and the process of repeatedly accumulating the monomolecular film on the substrate. Since this is a reciprocal process, it is difficult to continuously accumulate LB films.

As a method for improving this point and continuously accumulating the LB film, non-alternative (non-alternative) using an air flow or a water flow or a gradient in the process of pressing the monomolecular film against the substrate with a constant surface pressure. Reciprocal) (Patent Documents 3 to 5). However, even with these methods,
Since the process of repeatedly accumulating the monomolecular film on the substrate is a reciprocal process, the LB film cannot be accumulated thickly.
In the above-described cylindrical rotation method, the process of repeatedly accumulating a monomolecular film on a substrate is non-reciprocal, but the conventional method is not conscious of accumulating a thick LB film in the first place. As described in the above, as with other LB methods, it is very difficult to accumulate thickly.

  That is, the assembly and organization of the organic molecules constituting the LB film are based on intermolecular forces (van der Waals force), but since the intermolecular forces are very weak, the LB film Have the disadvantage of low mechanical strength and heat resistance. When the LB film is to be accumulated thick due to low mechanical strength, the LB film is peeled off from the substrate or destroyed during the accumulation due to gravity acting on the LB film. For these reasons, it has been impossible to make a large thin film laminated structure due to the accumulation of LB films (Non-Patent Documents 18 and 19).

  On the other hand, as a method for forming a thin film laminated structure, in addition to the LB method, an alternate adsorption method is also known (Non-Patent Documents 20 and 21). In this alternate adsorption method, a hydrophilic or hydrophobic treated substrate is alternately immersed in a dilute solution of polycation and a dilute solution of polyanion, so that the electrolyte polymer is spontaneously adsorbed on the substrate and self-assembled. This is a method for forming an organic ultrathin film. The assembly and organization of the organic molecules that make up the alternating adsorption film depend on electrostatic force (Coulomb force). However, this method has the disadvantage that continuous accumulation takes time because the substrate needs to be taken in and out in order to alternately immerse in the dilute solution of polycation and the dilute solution of polyanion.

The disadvantages of the conventional LB method and the alternate adsorption method as described above are that there is no reciprocal process such as the vertical movement of the substrate or the loading and unloading of the substrate, the supply of the monomolecular film to the substrate with a constant surface pressure, or the like. Furthermore, it can be solved at once by reducing or eliminating the influence of gravity by using buoyancy.
In particular, when the films are accumulated, the influence of gravity is reduced or eliminated by using buoyancy, so that the films can be accumulated much thicker than conventional ones. That is, the maximum film thickness that can be accumulated when the LB film is accumulated by the cylindrical rotation method in which a finite relative velocity exists between the cylindrical substrate and the water system in which it partially sinks, that is, the critical film thickness Try calculating l _c . In the case of using the rotating cylinder method, the LB film and the substrate are not peeled off, but the bonds between the molecules of the LB film 302 accumulated on the substrate 301 are cleaved as shown in FIG. The critical film thickness l _c at the time of fracture is calculated. When the mass of the LB film 302 accumulated in the total thickness l is M, the gravitational acceleration is g, and the force acting in the in-plane direction of the LB film 302 is f, the force acting on each part is as shown in FIG. 23A. Considering moment balance, f satisfies the following relationship.
f> Mg / 2 (1)
Therefore, if f is larger than Mg / 2, the accumulated LB film 302 is not broken.

As shown in FIG. 23B, in consideration of the specific gravity of the LB film 302, by submerging the substrate 301 is a rotating cylinder in water, and gravity f _t across the buoyancy f _b and aerial part applied to the submerged portion is offset Can be set as follows. Thereby, the amount of the right side of the equation (1) can be reduced to almost zero. In other words, f has a certain positive definite value,
f> 0 (2)
In this case, the critical film thickness l _c is ∞. This means that an arbitrarily thick LB film can be formed.

The present invention has been devised based on the above consideration, and is supported by the above consideration and embodiments of the invention described later.
That is, in order to solve the above problem, the first invention
A method for producing a thin film laminated structure comprising producing an integrated thin film laminated structure by accumulating thin films in a non-reciprocal process while rotating a columnar or polygonal columnar substrate having an elliptical cross section.

The second invention is
A thin film laminated structure in which thin films are accumulated and integrated in a non-reciprocal process while rotating a columnar or polygonal columnar substrate having an elliptical cross section.
The third invention is
A method of manufacturing a functional element, comprising a step of manufacturing an integrated thin film laminated structure by accumulating thin films in a non-reciprocal process while rotating a columnar or polygonal columnar substrate having an elliptical cross section. .

The fourth invention is:
A functional element using a thin film laminated structure in which thin films are integrally formed by accumulating thin films in a non-reciprocal process while rotating a columnar or polygonal columnar substrate having an elliptical cross section.
In the first to fourth inventions, a columnar substrate is preferably used as the columnar substrate having an elliptical cross section. The manufactured thin-film laminated structure may be used as it is, but typically, it is cut into a desired thickness from a direction perpendicular to the rotation axis of the substrate. The thin film can be accumulated by the LB method or the alternate adsorption method. When the LB method is used, monomolecular films are accumulated as thin films. Typically, the process of forming a monomolecular film as a thin film with a constant surface pressure and the process of transferring the monomolecular film onto a substrate are non-reciprocal processes.
The fifth invention is:
A method of manufacturing a thin film laminated structure, wherein a thin film is accumulated while rotating a columnar or polygonal columnar substrate having an elliptical cross section while being partially submerged in a liquid.
Here, water is typically used as the liquid. When the monomolecular film is accumulated as a thin film by the LB method, it is preferable that the structural destructive force applied to the monomolecular film, particularly the tearing, is determined from the difference in gravity between the part immersed in the liquid and the part existing in the air. Try to keep the force within the intermolecular force. Alternatively, the thin film can be accumulated arbitrarily thick by utilizing the balance between the buoyancy generated because the substrate is partially submerged in the liquid and the gravity acting on the substrate coming out of the water surface and the thin film accumulated on the substrate. Can do.

The sixth invention is:
A method for producing a thin film laminated structure characterized by accumulating thin films while rotating a columnar or polygonal columnar substrate having an elliptical cross section with a nanoscale or mesoscopic scale diameter.
The seventh invention
A thin film laminated structure in which thin films are accumulated while rotating a columnar or polygonal columnar substrate having an elliptical cross section with a nanoscale or mesoscopic scale diameter.
The eighth invention
A method of manufacturing a functional device, comprising a step of manufacturing a thin film laminated structure by accumulating thin films while rotating a columnar or polygonal columnar substrate having an elliptical cross section having a diameter of nanoscale or mesoscopic scale .
The ninth invention
It is a functional element using a thin film laminated structure in which thin films are accumulated while rotating a columnar or polygonal columnar substrate having an elliptical cross section with a nanoscale or mesoscopic scale diameter.
In the sixth to ninth inventions, the diameter of the columnar or polygonal columnar base having an elliptical cross section is preferably a molecular size.

The tenth invention is
Fabrication of a thin film laminated structure characterized by utilizing an interaction generated between a liquid flow and the monomolecular film when the monomolecular film is accumulated while rotating a columnar or polygonal columnar substrate having an elliptical cross section Is the method.
Here, as the columnar substrate having an elliptical cross section, a columnar substrate is preferably used. The liquid flow is, for example, a simple water flow or a water flow including an electrolyte.
The eleventh invention is
A rotating member is provided with a plurality of barrier members rotatably about one end thereof on a container containing a liquid, and at least two of the plurality of barrier members are simultaneously applied to the liquid by rotating the rotating member. A method for producing a thin film laminated structure is characterized in that a monomolecular film is formed by dripping a film forming liquid into a liquid in a portion between these barrier members.
Here, typically, a monomolecular film is accumulated while rotating a columnar or polygonal columnar substrate having an elliptical cross section. Preferably, the monomolecular film is accumulated while the substrate is rotated while being partially submerged in the liquid. Typically, water is used as the liquid.
In the first to eleventh inventions, when forming a hetero-material laminated structure as a thin film laminated structure, it is desirable that the thickness of each thin film is thinner than 1000 nm. Thus, for example, in an application in which a memory is formed by laminating two thinned metal / insulator multilayer thin film structures so that these layers are orthogonal to each other, the intersection of the metal ribbon cross structures Thus, the quantum effect can be expected and the recording density can be improved. In addition, when the semiconductor / insulator multilayer thin film laminated structure is applied to a solar cell, the effective area can be increased.

The twelfth invention
A plurality of barrier members are provided on the rotating member so as to be rotatable about one end thereof on the container containing the liquid, and at least two of the plurality of barrier members are turned into liquid by rotating the rotating member. An apparatus for manufacturing a thin film laminated structure characterized by being soaked at the same time and configured to drop a film forming liquid onto a liquid in a portion between these barrier members.
In the eleventh and twelfth inventions, the rotating member includes, for example, a ring-shaped member and a belt-shaped member such as a caterpillar.
The thirteenth invention is
The heterostructure is characterized in that the cross section is a concentric superlattice structure.
The fourteenth invention is
A heterostructure characterized in that the cross-section is a fractured arc-shaped structure.
The fifteenth invention
A heterostructure characterized in that the cross section is a spiral superlattice structure.
The sixteenth invention is
A heterostructure characterized in that the cross-section is a fractured spiral structure.
The seventeenth invention
A heterostructure having a cross section of a polygonal columnar superlattice structure.
The eighteenth invention
A heterostructure characterized in that the cross section is a fractured polygonal columnar structure.
The nineteenth invention
A heterostructure characterized in that the cross section is a concentric heteromaterial alternating laminate.
The twentieth invention is
A heterostructure characterized in that the cross-section is a broken arc-shaped heteromaterial structure.
The twenty-first invention
The heterostructure is characterized in that the cross section is a spiral heteromaterial alternating laminate.
The twenty-second invention relates to
A heterostructure characterized in that the cross-section is a broken spiral heteromaterial structure.
The twenty-third invention
The heterostructure is characterized in that the cross section is a polygonal columnar heteromaterial alternating laminate.
The twenty-fourth invention is
A heterostructure characterized in that the cross section is a broken polygonal columnar heteromaterial structure.

More generally, the above problem can be solved as follows.
That is, the twenty-fifth invention
The first structure formed by local interaction and the second structure formed by a preset global rule are coupled via a third structure having an anisotropic structure. It is a functional element characterized by comprising.

The twenty-sixth invention
A method of manufacturing a functional element in which a first structure and a second structure are coupled via a third structure,
Forming a third structure to have an anisotropic structure;
Forming the second structure according to preset global rules;
And a step of forming the first structure by local interaction.

The twenty-seventh invention
The first structure formed by local interaction and the second structure formed by a preset global rule are coupled via a third structure having an anisotropic structure. This is a functional system characterized by using a functional element.

  In the twenty-fifth, twenty-sixth and twenty-seventh inventions, for example, the first structure is formed by an autonomous distributed interaction, and the second structure is formed by a global design rule set in advance. The third structure is a plane or curved surface having an anisotropic periodic structure. Alternatively, the first structure is formed by autonomous distributed interaction, the second structure is formed by a preset global design rule, and the third structure is anisotropic. A plurality of surfaces having a typical periodic structure are crossed and overlapped.

The twenty-eighth invention is
An isotropic first structure in which time is continuously projected and an anisotropic second structure in which time is projected discontinuously include a third structure having an anisotropic periodic structure. It is a functional element characterized by being connected by a structure.

The twenty-ninth invention
A method of manufacturing a functional element in which a first structure and a second structure are coupled via a third structure,
Forming a third structure to have an anisotropic structure;
Forming the second structure as isotropically projected in time, and
Forming the first structure as an isotropic one in which time is continuously projected.

The thirtieth invention is
An isotropic first structure in which time is continuously projected and an anisotropic second structure in which time is projected discontinuously include a third structure having an anisotropic periodic structure. It is a functional system characterized by using functional elements that are coupled by a structure.
In the twenty-eighth, twenty-ninth and thirtieth inventions, for example, the third structure is formed by overlapping a plurality of planes having an anisotropic periodic structure.

The thirty-first invention is
An isotropic first structure in which time is continuously projected and an anisotropic second structure in which time is projected discontinuously are anisotropic in which time is continuously projected. This is a functional element that is coupled by the third structure.

The thirty-second invention
A method of manufacturing a functional element in which a first structure and a second structure are coupled via a third structure,
Forming the third structure as anisotropic with time projected continuously;
Forming the second structure as isotropically projected in time, and
Forming the first structure as an isotropic one in which time is continuously projected.

The thirty-third invention
An isotropic first structure in which time is projected continuously and an anisotropic second structure in which time is projected discontinuously are anisotropic in which time is projected continuously This is a functional system characterized by using a functional element coupled by the third structure.
In the thirty-first, thirty-second, and thirty-third inventions, for example, the third structure is simulated by superimposing at least two anisotropic two-dimensional structures on which time is continuously projected while shifting their directions. Isotropically recovered.

The thirty-fourth invention is
A functional element comprising a first structure formed bottom-up and a second structure formed top-down coupled through an anisotropic periodic third structure It is.

The thirty-fifth invention
A method of manufacturing a functional element in which a first structure and a second structure are coupled via a third structure,
Forming the third structure as an anisotropic periodic one;
Forming the second structure top-down;
And a step of forming the first structure in a bottom-up manner.

The thirty-sixth invention is
The use of a functional element in which a first structure formed by bottom-up and a second structure formed by top-down are coupled via an anisotropic periodic third structure. It is a featured functional system.
In the thirty-fourth, thirty-fifth and thirty-sixth inventions, for example, an integrated circuit (semiconductor integrated circuit) in which the first structure is formed by bottom-up by self-organization and the second structure is formed by top-down. And the third structure is a pseudo-isotropic recovery by overlapping and intersecting a plurality of anisotropic two-dimensional structures on which time is continuously projected.

The thirty-seventh aspect of the invention is
A first structure having a self-similarity or fractal structure and a second structure made of an integrated circuit formed in a top-down manner are combined by a third structure having an anisotropic periodic structure; It is a functional element characterized.

The thirty-eighth invention is
A method of manufacturing a functional element in which a first structure and a second structure are coupled via a third structure,
Forming the third structure to have an anisotropic periodic structure;
Forming the second structure as a top-down integrated circuit;
And a step of forming the first structure as having a self-similarity or fractal structure.

The thirty-ninth invention is
A functional element in which a first structure having a self-similarity or fractal structure and a second structure made of an integrated circuit formed in a top-down manner are coupled by a third structure having an anisotropic periodic structure It is a functional system characterized by using
In the thirty-seventh, thirty-eighth and thirty-ninth inventions, for example, the third structure is formed by overlapping a plurality of surfaces having an anisotropic periodic structure, and the integrated circuit is a semiconductor integrated circuit. Etc.

In the 25th to 40th inventions, the third structure has, for example, a conductor layer with a thickness of 0.2 nm to 60 nm, preferably 0.2 nm to 30 nm, typically 1 to 10 nm. A layer having a thickness of 0.2 nm to 50 μm, typically 0.2 nm to 600 nm, and more typically a thin piece made of a periodic structure with a dielectric layer on the order of 10 to 100 nm so that the layers cross each other. At least two sheets.
Further, the anisotropic structure may have a single spatial frequency or a plurality of spatial frequencies. In addition, anisotropic structures, for example, have multiple types of interaction or physical phenomenon carriers with different properties that differ by more than an order of magnitude in the characteristic time at which the interaction is transmitted. In a system of host materials for a given interaction or physical phenomenon, a first host material corresponding to a carrier (eg, an electron) characterized by a fast interaction time or physical phenomenon time causes a slow interaction or physical phenomenon The second host material corresponding to the carrier (for example, atom or molecule) characterized by the above is discretized in the order of the scale of 1 nm to 100 nm (for example, 0.2 nm to 600 nm). Also, in this case, for example, for the first host material, the first host material connected to the arbitrary position in the entire system is at least one place surrounding the system at one position. Exists or is exposed on a line or curve.

When the third structure uses a repeated structure of a conductor layer and a dielectric layer, the properties of the dielectric layers on both sides in contact with the conductor layer may be the same or different.
In a typical example, a second structure composed of an integrated circuit (such as a semiconductor integrated circuit) manufactured in a top-down manner, and a combination of the first structure and the third structure are provided at the edge of the combination. An existing straight line or curved one-dimensional structure is connected as an interface region.

40th invention is
The functional material is characterized in that the third structure in the 25th, 28th, 31st, 34th, and 37th inventions is laminated by three or more layers.

The forty-first invention
A functional material comprising a laminate of the first structure and the third structure in the 25th, 29th, 31st, 34th and 37th inventions, wherein two or more layers are laminated.

The forty-second invention
A structure in which at least two sheets of a strip or ribbon-shaped periodic structure of a conductor layer and a dielectric layer are overlapped so that the layers intersect each other and the edges of the conductor layers face each other It is a functional element characterized by including.

The forty-third invention
Includes a structure in which at least two pieces of a thin piece composed of a periodic structure of a strip-like or ribbon-like conductor layer and a dielectric layer are overlapped so that the layers intersect each other and the edges of the conductor layers face each other It is a functional material characterized by this.

The forty-fourth invention is
Thin layers of a periodic structure of a strip-like or ribbon-like conductor layer having a thickness of 0.2 nm or more and 60 nm or less and a dielectric layer having a thickness greater than or equal to the thickness of the conductor layer intersect with each other. In addition, the functional element includes a structure in which at least two layers are stacked so that the edges of the conductor layer face each other.

Forty-fifth invention
Thin layers of a periodic structure of a strip-like or ribbon-like conductor layer having a thickness of 0.2 nm or more and 60 nm or less and a dielectric layer having a thickness greater than or equal to the thickness of the conductor layer intersect with each other. In addition, the functional material includes a structure in which at least two sheets are stacked so that edges of the conductor layers face each other.
In the forty-sixth and forty-fifth inventions, the thickness of the conductor layer is preferably 0.2 nm to 30 nm, and the thickness of the dielectric layer is generally 0.2 nm to 200 μm, typically 0. It is 2 nm or more and 50 μm or less.

The forty-sixth invention is
An anisotropic structure has multiple types of interaction or physical phenomena carriers with different properties that differ by more than an order of magnitude in the characteristic time at which the interaction is transmitted, A first host material corresponding to a carrier characterized by a fast interaction time or physical phenomenon time in a system of materials hosting it for a physical phenomenon, a first corresponding to a carrier characterized by a slow interaction or physical phenomenon. The functional element is characterized in that the host material of 2 is discretized on the order of a scale of 1 nm to 100 nm.

The 47th invention is
An anisotropic structure has multiple types of interaction or physical phenomena carriers with different properties that differ by more than an order of magnitude in the characteristic time at which the interaction is transmitted, A first host material corresponding to a carrier characterized by a fast interaction time or physical phenomenon time in a system of materials hosting it for a physical phenomenon, a first corresponding to a carrier characterized by a slow interaction or physical phenomenon. 2 is a method of manufacturing a functional device, wherein the host material is discretized in an order of a scale of 1 nm to 100 nm.

Forty-eighth invention is
An anisotropic structure has multiple types of interaction or physical phenomena carriers with different properties that differ by more than an order of magnitude in the characteristic time at which the interaction is transmitted, A first host material corresponding to a carrier characterized by a fast interaction time or physical phenomenon time in a system of substances hosting it for a physical phenomenon, a first corresponding to a carrier characterized by a slow interaction or physical phenomenon. 2 is a functional system using functional elements discretized on the order of a scale of 1 nm to 100 nm.
In the forty-fourth to forty-eighth inventions, what has been described in relation to the twenty-fifth to thirty-ninth inventions is valid as long as not against the nature thereof.
Further, in the twenty-fifth to forty-eighth inventions, what has been described in relation to the first to twenty-fourth inventions is valid as long as it is not contrary to the nature thereof.
In the present invention configured as described above, the first structure formed by local interaction and the second structure formed by a preset global rule are anisotropic. By coupling through the third structure having the structure, it is possible to easily integrate the top-down system and the bottom-up system, which has been difficult in the past.

According to the present invention, for example, a bulk-sized Baumkuchen, spiral, or polygonal composite multilayer thin film laminated structure controlled by molecular size can be formed. In addition, since the LB film accumulating apparatus used for forming this thin film laminated structure can be reduced in size, it can be put in a clean box and operated. Moreover, this thin film laminated structure can be applied to a heterostructure, a superlattice structure, an insulator / conductor laminated structure, and the like. Furthermore, 1000 or more layers or 10000 or more layers of thin films can be laminated without breaking, and an LB film having an arbitrary thickness can be formed. Then, by using a Baumkuchen-like metal / insulator multilayer structure cut out from this, it is possible to realize a memory such as a flexible thin film high-density ROM or RAM of 10 to 160 Gbits / cm ² (0.1 to 1 Tb / inch ² ), for example. . In this case, since the core portion of the memory can be formed free of lithography, a disposable memory and a ubiquitous information device in which the material surface becomes a storage element as it is can be realized at low cost. This thin film stacking method can also be applied to highly efficient solar cells.
Furthermore, according to the present invention, the advantages of the bottom-up system and the top-down system can be maximized, and a novel ultra-high density memory element, magnetic recording element, solar cell, catalytic reactor, etc. can be realized. be able to.
More generally, according to the present invention, it is possible to realize a highly functional device capable of making the most of the advantages of a bottom-up system represented by a living body and a top-down system represented by a silicon LSI. Can do. That is, it is possible to realize a high-functional functional element in which an artificial information transmission / control system corresponding to an associated nervous system is provided between a bottom-up system and a top-down system corresponding to cells.
Further, by using a structure in which time is continuously projected, an artificial nervous system equivalent having the ultimate resolution (control of atomic layer order) can be formed. This also makes it possible, for example, to arrange nanostructures / zero-dimensional structures that can be responsible for the surface enhancement effect in a massively parallel multiplex over the bulk size.

In addition, a nano-scale discretized bulk size system is created. For example, by combining an LSI system formed on a silicon substrate with an autonomous distributed system arranged in close proximity to it, a bottom-up system A platform that connects top-down systems can be realized.
In addition, by creating a bulk size system that is discretized at the nanoscale, and obtaining a 2 to 3 dimensional nanostructure that can be addressed locally and individually in a global size, it is microscopic. It is possible to realize a highly functional platform that connects the target world and the macroscopic world. In addition, most nanoscale parallel new functional elements that have no shape at present but are expected to appear in the future are synergistically combined with the silicon-based world and the carbon-based organic matter world. By taking a standoff, it is possible to dramatically increase the functions.

Further, according to the present invention, for example, a flexible functional element with an integration degree of 10 to 160 Gbits / cm ² (0.1 to 1 Tb / inch ² ) can be realized. For example, it is possible to realize a ubiquitous information device in which the material surface becomes a functional element as it is. In this case, since the core part of the functional element can be formed free of lithography, the functional element can be manufactured at low cost. If the number of elements is N, N ² alignment is conventionally required. However, in the present invention, 4N alignment is sufficient, and the alignment difficulty is reduced by 1 / N compared to the conventional case. Moreover, this effect increases as the recording capacity increases.
In particular, in a memory element, reading of information (data) stored in an intersection is performed by parallel reading over a plurality of intersections on a diagonal line, thereby enabling high-speed reading.

Further, according to the present invention, it is possible to provide a material system dominated by a discrete differential equation represented by a cellular automaton, not a material system dominated by a differential equation system. According to this material system, for example, it is possible to show a modulated dimension, connectivity, spontaneous symmetry breaking, or a self-organized critical phenomenon regarding the property of interest.
The development of nanotechnology is expected to be infinite, but the structure of the matrix that supports it has a cut-off of atomic spacing (because it does not become infinitely small), and its “convergence destination” is set in advance (with certain accuracy) It is not only from the point of view that it is ahead of the times, but it is not only a matter of the fact that the limit value and the combination of the existing ULSI system are set to the front goal from the present time and begin to capture. Without shape, it is also important in anticipating future nanotechnology achievements.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
First, a first embodiment of the present invention will be described.
24 and 25 show the LB film accumulation method according to the first embodiment. Here, FIG. 24 and FIG. 25 are a plan view of the LB film accumulating device and a sectional view in the direction along the trough, respectively.

As shown in FIGS. 24 and 25, in the first embodiment, water 52 is stretched on an annular trough 51. There is no restriction | limiting in particular in the cross-sectional shape of the trough 51, Although it can select as needed, For example, it is a rectangle. The radius, width, and depth of the trough 51 are not particularly limited and can be selected as necessary. For example, the radius is 5 to 20 cm, the width is 1 to 10 cm, and the depth is 2 to 10 cm. A cylindrical base 53 is attached to the trough 51 along the radial direction of the trough 51. The base 53 is configured to be rotatable about its central axis and movable up and down by a drive mechanism (not shown). On the trough 51, a film forming droplet dropping device 54 is attached to a portion different from the base 53, and a film is formed from the film forming droplet dropping device 54 on the surface of water 52 stretched on the trough 51. The liquid can be dripped.
As shown in FIG. 25, the bottom surface 51a of the trough 51 is configured to be rotatable around the central axis with respect to other parts of the trough 51 while maintaining the confidentiality of the trough 51 by a driving mechanism (not shown). Has been.

Next, a method for accumulating LB films using this LB film accumulator will be described.
The bottom surface 51a of the trough 51 on which the water 52 is stretched is rotated at a predetermined rotational speed v. Since friction exists between the bottom surface 51a of the trough 51 and the water 52, the water 52 also rotates in a form dragged by the bottom surface 51a with the rotation of the bottom surface 51a of the trough 51, and a water flow is generated. At this time, the flow velocity of the water 52 is distributed in the depth direction from the water surface, and the shallower the flow velocity is, the smaller the flow velocity becomes. For this reason, when the film forming liquid is dropped onto the water surface from the film forming droplet dropping device 54, the molecules of the developed film forming liquid are gradually aligned by a gentle water flow near the water surface, and a monomolecular film 55 is formed. At the same time, the monomolecular film 55 is appropriately compressed to have a constant surface pressure. On the other hand, the columnar base 53 is positioned so that, for example, the lower half thereof sinks into the water 52. Then, as shown in FIG. 26, the monomolecular film 55 formed as described above is attached to the surface of the substrate 53 while rotating, and is scooped. By repeating this a desired number of times, the monomolecular film 55 can be stacked on the substrate 53 by a desired number of layers.

As a raw material of the LB film, for example, a substance having a hydrophilic group and a hydrophobic group such as linear fatty acid C _n H _{2n + 1} COOH, arachidic acid, or the like is used. In particular, when a Z-type LB film is formed, an LB film of C ₁₅ · TCNQ (2-pentadecyl-7,7 ′, 8,8′-tetracy-anoquinodimethane, TCNQ), LB of protoporphyrin dimethylester, PPDM Membranes, mesopyrphyrin dimethylester (MPDM), polyamide (polyacid alkylamine salt, PAAS) LB membranes, etc. are used (Patent Documents 18 and 19).

  As described above, according to the first embodiment, the barrier is not moved as in the conventional LB method, but the bottom surface 51a of the trough 51 is rotated, so that the surface of the trough 51 is gently moved near the water surface by friction. A constant water pressure is generated in the monomolecular film 55 by dropping a film forming liquid onto the water surface in this state, and the monomolecular film 55 is attached to the surface of the substrate 53 while rotating the base 53. Therefore, the monomolecular film 55 can be continuously accumulated on the substrate 53 in a completely non-reciprocal process. Further, since the monomolecular film 55 is accumulated in a state where the lower half of the base 53 is submerged in the water 52, the monomolecular film 55 is not broken due to the effect of buoyancy as described above. Any number can be accumulated in multiple layers. For this reason, it is possible to accumulate, for example, 1000 layers or more or 10000 layers or more of monomolecular films 55 that could not be achieved by the conventional LB method, and a sufficiently thick LB film laminated structure can be obtained.

Next explained is the second embodiment of the invention.
FIG. 27 is a plan view of an LB film accumulating apparatus used in the second embodiment. The cross-sectional view along the trough of this LB film accumulator is the same as FIG.
As shown in FIG. 27, in the LB film accumulating apparatus according to the second embodiment, an annular trough 51 in which a straight portion and an arcuate curved portion are combined is used. The width of the trough 51, the length of the straight portion, the radius and the depth of the curved portion are not particularly limited and can be selected as necessary. For example, the width is 1 to 10 cm and the length of the straight portion is 30 -60 cm, the radius of the curved portion is 5-20 cm, and the depth is 2-10 cm. A columnar base 53 is attached in the middle of one straight portion of the trough 51, for example, near the center. A film forming droplet dropping device 54 is attached in the middle of one curved portion of the trough 51, for example, near the center. Further, a pump 56 is attached in the middle of the other straight portion of the trough 51, and the water 52 can be circulated by using the pump 56 so that a water flow having a desired flow rate can be generated.

Next, a method for accumulating LB films using this LB film accumulator will be described.
By circulating the water 52 using the pump 56, the flow velocity in the vicinity of the water surface is made sufficiently small, and the film-forming liquid is dropped from the film-forming droplet dropping device 54 onto the water surface in a state of a gentle water flow. Then, the molecules of the developed film forming solution are gradually aligned by a gentle water flow near the water surface to form a monomolecular film 55, and the monomolecular film 55 is appropriately compressed, before the base 53. With a constant surface pressure. On the other hand, the base 53 is positioned so that the lower half of the base 53 sinks into the water 52, for example. Then, as shown in FIG. 26, the monomolecular film 55 formed as described above is attached to the surface of the substrate 53 while being rotated and scraped off. By repeating this a desired number of times, the monomolecular film 55 can be stacked on the substrate 53 by a desired number of layers.

  As described above, according to the second embodiment, instead of moving the barrier as in the conventional LB method, the water 52 of the trough 51 is circulated using the pump 56, and a gentle water flow is generated near the water surface. In this state, a film forming solution is dropped on the water surface to generate a constant surface pressure on the monomolecular film 55, and the monomolecular film 55 is adhered to the surface of the substrate 53 while rotating. In addition, the monomolecular film 55 can be continuously accumulated on the substrate 53 in a non-reciprocal process. Further, since the monomolecular film 55 is accumulated in a state where the lower half of the base 53 is submerged in the water 52, the monomolecular film 55 is not broken due to the effect of buoyancy as described above. Any number can be accumulated in multiple layers. For this reason, it is possible to accumulate, for example, 1000 layers or more or 10000 layers or more of monomolecular films 55 that could not be achieved by the conventional LB method, and a sufficiently thick LB film laminated structure can be obtained.

Next explained is the third embodiment of the invention.
FIG. 28 is a plan view of an LB film accumulating apparatus used in the third embodiment. The cross-sectional view along the trough of this LB film accumulator is the same as FIG.
As shown in FIG. 28, in the third embodiment, water 52 is stretched on an annular trough 51. The cross-sectional shape, radius, width, depth and the like of the trough 51 are the same as those in the first embodiment. A cylindrical base 53 is attached to the trough 51 along the radial direction of the trough 51. The base 53 is configured to be rotatable about its central axis and movable up and down by a drive mechanism (not shown). On the trough 51, a film forming droplet dropping device 54 is attached to a portion different from the base 53, and a film is formed from the film forming droplet dropping device 54 on the surface of water 52 stretched on the trough 51. The liquid can be dripped. Further, a water flow generator 58 and a damper 59 with a screw 57 installed so as to be located in the water 52 are attached to the trough 51 at a site different from the base 53 and the film forming droplet dropping device 54.

Next, a method for accumulating LB films using this LB film accumulator will be described.
The screw 57 of the water flow generator 58 is rotated to circulate the water 52 in the trough 51. The water flow thus generated is attenuated by the damper 59 and becomes a gentle water flow. In this state, the film forming liquid is dropped from the film forming droplet dropping device 54 onto the water surface. Then, the molecules of the developed film forming solution are gradually aligned by a gentle water flow near the water surface to form a monomolecular film 55, and the monomolecular film 55 is appropriately compressed, before the base 53. With a constant surface pressure. On the other hand, the base 53 is positioned so that the lower half of the base 53 sinks into the water 52, for example. Then, as shown in FIG. 26, the monomolecular film 55 formed as described above is attached to the surface of the substrate 53 while being rotated and scraped off. By repeating this a desired number of times, the monomolecular film 55 can be stacked on the substrate 53 by a desired number of layers.

  As described above, according to the third embodiment, instead of moving the barrier as in the conventional LB method, the water 52 of the trough 51 is circulated using the screw 57, and the water surface is further passed through the damper 59. A gentle water flow is generated in the vicinity, and in this state, a film forming solution is dropped on the water surface to generate a constant surface pressure on the monomolecular film 55, and the monomolecular film 55 is attached to the surface while rotating the base 53. Therefore, the monomolecular film 55 can be continuously accumulated on the substrate 53 in a completely non-reciprocal process. Further, since the monomolecular film 55 is accumulated in a state where the lower half of the base 53 is submerged in the water 52, the monomolecular film 55 is not broken due to the effect of buoyancy as described above. Any number can be accumulated in multiple layers. For this reason, it is possible to accumulate, for example, 1000 layers or more or 10000 layers or more of monomolecular films 55 that could not be achieved by the conventional LB method, and a sufficiently thick LB film laminated structure can be obtained.

Next explained is the fourth embodiment of the invention.
In the fourth embodiment, a case where a composite cumulative structure is formed by accumulating a plurality of types of monomolecular films different from each other will be described.
That is, in the LB film accumulating method according to the first to third embodiments, a plurality of different types of film forming liquids are alternately dropped, and a partition is placed between them to make each monomolecular film have a constant surface pressure. . Then, these monomolecular films are scraped by adhering to the surface of the substrate 53 while rotating it. By repeating this for each monomolecular film a desired number of times, a plurality of types of monomolecular films can be stacked on the substrate 53 in a desired order and in a desired number of layers.

FIG. 29A shows how two types of monomolecular films 60 and 61 are accumulated as an example. FIG. 29B shows an example of a Baumkuchen-like composite cumulative structure in which these monomolecular films 60 and 61 are accumulated on the substrate 53.
According to the fourth embodiment, a plurality of types of monomolecular films can be continuously accumulated in any order and in any length on the substrate 53 in a completely non-reciprocal process. In addition, since the monomolecular films are accumulated in a state where the lower half of the substrate 53 is submerged in the water 52, as described above, these monomolecular films are produced without breaking due to the effect of buoyancy. Any number can be accumulated in multiple layers. For this reason, it is possible to accumulate, for example, 1000 layers or more or 10,000 layers or more of monomolecular films that could not be achieved by the conventional LB method, and a sufficiently thick LB film composite accumulation structure can be obtained.

Next explained is the fifth embodiment of the invention.
FIG. 30 is a side view of the LB film accumulating apparatus used in the fifth embodiment. FIG. 31 is a front view showing a state in which the film forming droplet dropping device of the LB film accumulating apparatus is close to the trough.
As shown in FIGS. 30 and 31, in the fifth embodiment, water 52 is stretched on a linear trough 51 having a predetermined width. The cross-sectional shape, width, depth, etc. of the trough 51 are the same as those in the first embodiment. Above the trough 51, two annular rings 63, 64 are fixed to both ends of the central shaft 62 by relay members (not shown) such as spokes, and a plurality of barrier pieces 65 are attached to these annular rings 63, 64. A ferris wheel-like object is installed as a whole around the one end. A film forming droplet dropping device 54 is attached to each barrier piece 65. These barrier pieces 65 may be provided at equal intervals or not. In this case, when the barrier piece 65 comes to the lowermost part, the lower part of the barrier piece 65 including the front and rear barrier pieces 65 sinks into the water 52. Each barrier piece 65 is preferably subjected to predetermined surface processing or surface treatment so that the interaction with the monomolecular film becomes small.
In addition, in FIG. 30, illustration of the front ring 64 is abbreviate | omitted.

Next, a method for accumulating LB films using this LB film accumulator will be described.
The central shaft 62 is rotated to rotate the rings 63 and 64, thereby rotating the barrier piece 65. In this case, since the barrier piece 65 is rotatable around one end thereof, it is always parallel to the direction of gravity. When a certain barrier piece 65 starts to enter the water 52 by the rotation, the film forming liquid is dropped onto the water surface from the film forming liquid dropping device 54 immediately before the barrier piece 65 as viewed in the rotation direction. Then, the molecules of the developed film forming solution are gradually aligned while being pushed by the barrier piece 65 which starts to enter the water 52, and the monomolecular film 55 is formed. Is moderately compressed to a constant surface pressure, which is sent out on the front water surface. Here, since the barrier piece 65 is always parallel to the direction of gravity, when the barrier piece 65 starts to enter the water 52, the barrier piece 65 is perpendicular to the water surface. It is compressed in the direction of the water surface by 65 and has an ideal shape. Next, for example, following the monomolecular film 55, the next monomolecular film 61 is formed using the same or different film forming liquid by the same method, and is sent out to the front water surface. On the other hand, although not shown in FIG. 30, the base 53 is positioned so that, for example, the lower half thereof sinks into the water 52. Then, as shown in FIG. 26, the monomolecular film formed as described above is attached to the surface of the substrate 53 while being rotated and skimmed. By repeating this as many times as necessary by appropriately changing the film forming liquid as necessary, a desired type of monomolecular film can be stacked on the substrate 53 in a desired order and in a desired number of layers.

  As described above, according to the fifth embodiment, the plurality of barrier pieces 65 are rotatably provided around one end of the annular rings 63 and 64 fixed to the central shaft 62, and the annular rings 63 and 64 are provided. Rotating around the central axis 62 and compressing the molecules of the film-forming solution dropped from the film-forming droplet dropping device 54 at a predetermined timing with the barrier piece 65, a constant surface pressure is generated in the monomolecular film. Since the monomolecular film is adhered to the surface of the substrate 53 while rotating the substrate 53, the monomolecular film can be continuously accumulated on the substrate 53 in a completely non-reciprocal process. If necessary, a plurality of different types of film forming liquids are used as the film forming liquid dropping devices 54, the dropping order of these film forming liquids is selected, and the interval between the barrier pieces 65 is arbitrarily set. By doing so, it is possible to form a composite cumulative structure in which any kind of monomolecular film is laminated in any length and in any order with any number of layers. For example, a composite cumulative structure similar to that shown in FIG. 29B can be formed. Further, since the monomolecular film is accumulated in a state where the lower half of the substrate 53 is submerged in the water 52, as described above, the monomolecular film can be arbitrarily formed without causing breakage due to the effect of buoyancy. It can be accumulated in multiple layers. For this reason, it is possible to accumulate, for example, 1000 layers or more or 10,000 layers or more of monomolecular films that could not be achieved by the conventional LB method, and a sufficiently thick composite LB film laminated structure can be obtained.

Next, a sixth embodiment of the present invention will be described.
In the sixth embodiment, in the LB film accumulating device according to the fifth embodiment, a ferris wheel-like device having a plurality of barrier pieces 65 provided on the annular rings 63 and 64 above the trough 51 is provided at a predetermined interval. Are installed in series and / or in parallel, and using these, accumulation of a desired type of monomolecular film is sequentially performed in a two-dimensional or three-dimensional manner in a desired arrangement pattern.
According to the sixth embodiment, it is possible to easily form a two-dimensional or three-dimensional superlattice with an arbitrary number of repetitions and an arbitrary thickness by accumulating monomolecular films.

Next explained is the seventh embodiment of the invention.
In the seventh embodiment, as the cylindrical substrate 53 in the first to sixth embodiments, a substrate having a sufficiently small diameter, for example, a size of a single molecule is used. Specifically, for example, carbon nanotubes (CNT) are used as the base 53. Then, monomolecular films are accumulated using the base 53 having a sufficiently small diameter.
According to the seventh embodiment, for example, as shown in FIG. 32, the monomolecular film 55 can be accumulated on the base 53 in a spiral shape. That is, a spiral LB film laminated structure can be obtained.

Next, an eighth embodiment of the invention will be described.
In the eighth embodiment, instead of the columnar base 53 in the first to sixth embodiments, a base 53 having a polygonal column shape (for example, a regular quadrangular prism shape, a regular triangle shape, a regular hexagon shape, etc.) is used. The monomolecular film is accumulated on the substrate 53.
According to the eighth embodiment, for example, as shown in FIGS. 33A to 33C, LB film laminated structures each having a regular quadrangular prism shape, a regular triangle shape, and a regular hexagon shape can be obtained. Then, by arranging a plurality of regular quadrangular columnar LB film stacked structures shown in FIG. 33A, the plane can be filled without gaps as shown in FIG. 34A. Similarly, by arranging a plurality of regular triangular prism-like LB film laminated structures shown in FIG. 33B, the plane can be filled without gaps as shown in FIGS. Similarly, by arranging a plurality of regular hexagonal columnar LB film laminated structures shown in FIG. 33C, the plane can be filled without gaps as shown in FIG. 34E. Furthermore, a regular triangular prism-shaped LB film laminated structure having an arbitrary side length shown in FIG. 33B and a regular hexagonal columnar LB film laminated structure having an arbitrary side length shown in FIG. 33C are arranged in a predetermined arrangement. By arranging a plurality of patterns, the plane can be filled without gaps as shown in FIG.

Next, a ninth embodiment of the invention will be described.
In the ninth embodiment, a cylindrical substrate 53 and a water flow are used, and an LB film laminated structure is formed by utilizing an interaction generated between the water flow and the LB film. That is, as shown in FIG. 36A, the flow rate of the water 52 in the trough 51 is increased to some extent even at a depth near the lower portion of the base 53, and the monomolecular film 55 is accumulated on the surface of the base 53 while rotating. At this time, the monomolecular film 55 accumulated on the substrate 53 is subjected to in-plane anisotropy similar to the frictional transfer method (Mechanical Deposition / Friction-Transfer Technique) by applying a force due to the flow of water in the water 52. (In addition, when an aqueous solution containing an electrolyte is put in the trough 51, in addition to the force caused by the flow of water, an electromagnetic interaction caused by the flow of charged substances and ions is also added). In particular, when the flow is strong, outside the water 52, the molecules of the monomolecular film 55 that are oriented in the normal direction of the substrate 53 are oriented in a direction inclined from the normal direction. For this reason, as shown in FIG. 36B, the monomolecular film 55 is accumulated in a state in which each molecule faces a direction inclined from the normal direction of the substrate 53. Subsequently, as shown in FIG. 36C, the second monolayer 55 is accumulated. At this time, the hydrophilic group of the molecule of the second monolayer 55 may be bonded to the side surface of the alkyl group that is the hydrophobic group of the molecule of the first monolayer 55.
As described above, according to the ninth embodiment, the monomolecular film 55 can be accumulated in a state in which each molecule faces a direction inclined from the normal direction of the substrate 53. In particular, it is possible to obtain an in-plane oriented laminated film or an anisotropic LB film with a film thickness controllability that is remarkably superior to that of the friction transfer method.

Next explained is the tenth embodiment of the invention.
In the tenth embodiment, the metal film is formed by plating the surface of the LB film laminated structure formed in the first to ninth embodiments.
According to the tenth embodiment, a metal / insulator multilayer structure in which metal films and LB film stack structures are alternately stacked can be formed.

Next, an eleventh embodiment of the present invention will be described.
In the eleventh embodiment, in the method for forming an LB film laminated structure according to the first to ninth embodiments, a base 53 is formed of an insulating material and a conductive material (for example, metal) as a monomolecular film. By alternately accumulating them on top of each other, an LB film laminated structure is formed.
According to the eleventh embodiment, a conductor (for example, metal) / insulator multilayer structure can be formed only by the LB film.

Next, a twelfth embodiment of the invention is described.
In the twelfth embodiment, in the second embodiment, in place of the pump 56, a water wheel driven by a motor is provided in the water 52, and the water 52 is circulated by turning the water wheel. A water flow with a flow rate of
Other than the above are the same as in the second embodiment.
According to the twelfth embodiment, the same advantages as those of the second embodiment can be obtained.

Next, a thirteenth embodiment of the invention is described.
In the thirteenth embodiment, instead of rotating the bottom surface of the trough 51 in the first embodiment, the water 52 is circulated by rotating the side surface of the trough 51 to generate a water flow having a desired flow rate. .
Other than the above are the same as in the first embodiment.
According to the thirteenth embodiment, advantages similar to those of the first embodiment can be obtained.

Next, a fourteenth embodiment of the invention is described.
In the fourteenth embodiment, instead of rotating the bottom surface of the trough 51 in the first embodiment, an iron ball is placed in the water 52 of the trough 51, and the iron ball is placed outside the trough 51. The water 52 is circulated by being moved by a magnetic field provided by a provided magnet, thereby generating a water flow having a desired flow rate.
Other than the above are the same as in the first embodiment.
According to the fourteenth embodiment, advantages similar to those of the first embodiment can be obtained.

Next, a fifteenth embodiment of the invention is described.
In the fifteenth embodiment, the trough 51 according to the first or second embodiment, the columnar or polygonal column base 53 according to the first to sixth or eighth embodiments, the first, second, The water flow generation method according to the twelfth to fourteenth embodiments is combined.
According to the fifteenth embodiment, it is possible to form a Baumkuchen-like multilayer LB film laminated structure, a spiral multilayer LB film laminated structure, or a polygonal columnar multilayer LB film laminated structure.

Next, a sixteenth embodiment of the present invention will be described.
In the sixteenth embodiment, the trough 51 according to the first or second embodiment, the columnar or polygonal base 53 according to the first to sixth or eighth embodiments, and the fifth embodiment. Combined with the Ferris wheel system.
According to the sixteenth embodiment, it is possible to form a Baumkuchen-like composite multilayer LB film laminated structure, a spiral composite multilayer LB film laminated structure, or a polygonal columnar composite multilayer LB film laminated structure.

Next, a seventeenth embodiment of the invention is described.
In the seventeenth embodiment, a case where a multilayer thin film stack structure is formed by forming an organic ultrathin film by an alternating adsorption method will be described.
FIG. 37 is a plan view of an organic ultrathin film accumulator used for accumulating organic ultrathin films according to the seventeenth embodiment.
As shown in FIG. 37, in the seventeenth embodiment, a columnar base 53 is rotatably provided at the center of the trough 66. The inside of the cylindrical container 66 is divided into four parts by a dividing wall 67, and a polycation dilute solution 68 is placed in one part, and a polyanion dilute solution 69 is placed in a part opposite to the part. The other two parts contain water 52. This water 52 is for preventing the polycation dilute solution 68 and the polyanion dilute solution 69 from being mixed. The dividing wall 67 can be controlled by the dividing wall control device 70. That is, the dividing wall 67 moves in the radial direction so as not to prevent the film from growing as the film is stacked on the base 53 and becomes larger. At this time, the dividing wall 67 moves while maintaining a minute gap so that the polycation dilute solution 68 and the polyanion dilute solution 69 are not mixed.

Next, a method for accumulating organic ultrathin films using this organic ultrathin film accumulator will be described.
The surface of the base 53 is previously subjected to hydrophilic treatment or hydrophobic treatment. While the substrate 53 is rotated, the surface of the substrate 53 is alternately immersed in the dilute polycation solution 68 and the dilute polyanion solution 69, so that the electrolyte polymer is adsorbed spontaneously, and self-organized to form an organic ultrathin film. Form. By repeating this a desired number of times, it is possible to stack the organic ultrathin film on the substrate 53 by the desired number of layers.
As the polycation, for example, polyallylamine (PAH), polyethyleneimine (PEI), polydimethyldiallylammonium chloride (PDDA) or the like is used. As the polyanion, for example, polystyrene sulfonic acid (PSS), polyacrylic acid (PAA), or the like is used.
As described above, according to the seventeenth embodiment, the organic ultrathin film is attached to the surface of the substrate 53 while rotating the substrate 53 by the alternate adsorption method. Therefore, the organic ultrathin film is formed on the substrate 53 in a completely non-reciprocal process. Thin films can be accumulated continuously.

Next, an eighteenth embodiment of the invention is described.
In the eighteenth embodiment, in the ultrathin film accumulating device according to the seventeenth embodiment, a portion where the polycation dilute solution 68 is placed inside the cylindrical container 66, and a portion where the polyanion dilute solution 69 is placed. In addition to the portion where the water 52 is placed, a portion where the plating solution is placed is provided.
Next, a method for accumulating organic ultrathin films using this organic ultrathin film accumulator will be described.
The surface of the base 53 is previously subjected to hydrophilic treatment or hydrophobic treatment. While the substrate 53 is rotated, the surface of the substrate 53 is alternately immersed in the dilute polycation solution 68 and the dilute polyanion solution 69, so that the electrolyte polymer is adsorbed spontaneously, and self-organized to form an organic ultrathin film. Form. Further, a metal film is formed by electroless plating by bringing the surface of the base 53 into contact with a plating solution.
According to the eighteenth embodiment, since the organic ultrathin film and the metal film are alternately attached to the surface of the substrate 53 while rotating the substrate 53 by the alternate adsorption method, the organic ultrathin film is completely deposited on the substrate 53 in a non-reciprocal process. Thin films and metal films can be continuously accumulated, and a multilayer metal / insulator stack structure can be formed.

Next, a nineteenth embodiment of the invention is described.
FIG. 38 is a side view of an organic ultrathin film accumulating apparatus used for accumulating organic ultrathin films according to the nineteenth embodiment.
As shown in FIG. 38, in the nineteenth embodiment, the interior of the trough 66 is divided into two parts by a base 53 and a dividing wall 67 oriented in the horizontal direction. A solution 68 is placed, and a dilute polyanion solution 69 is placed in the other part. The dividing wall 67 can be controlled by a dividing wall control device (not shown).

Next, a method for accumulating organic ultrathin films using this organic ultrathin film accumulator will be described.
The surface of the base 53 is previously subjected to hydrophilic treatment or hydrophobic treatment. While the substrate 53 is rotated, the surface of the substrate 53 is alternately immersed in the dilute polycation solution 68 and the dilute polyanion solution 69, so that the electrolyte polymer is adsorbed spontaneously, and self-organized to form an organic ultrathin film. Form. By repeating this a desired number of times, it is possible to stack the organic ultrathin film on the substrate 53 by the desired number of layers.
As described above, according to the nineteenth embodiment, the organic ultrathin film is attached to the surface of the substrate 53 while rotating the substrate 53 by the alternate adsorption method. Therefore, the organic ultrathin film is formed on the substrate 53 in a completely non-reciprocal process. Thin films can be accumulated continuously.

Next, a twentieth embodiment of the invention is described.
In the twentieth embodiment, in the ultrathin film accumulation apparatus according to the nineteenth embodiment, in addition to the portion where the polycation dilute solution 68 is placed inside the trough 66 and the portion where the polyanion dilute solution 69 is placed. A portion into which the plating solution is placed is provided.
Next, a method for accumulating organic ultrathin films using this organic ultrathin film accumulator will be described.
The surface of the base 53 is previously subjected to hydrophilic treatment or hydrophobic treatment. While the substrate 53 is rotated, the surface of the substrate 53 is alternately immersed in the dilute polycation solution 68 and the dilute polyanion solution 69, so that the electrolyte polymer is adsorbed spontaneously, and self-organized to form an organic ultrathin film. Form. Further, a metal film is formed by electroless plating by bringing the surface of the base 53 into contact with a plating solution.
According to the twentieth embodiment, the organic ultrathin film and the metal film are alternately attached to the surface of the substrate 53 while rotating the substrate 53 by the alternate adsorption method. Thin films and metal films can be continuously accumulated, and multilayer metal / insulator stack structures can be formed.

Next, a twenty-first embodiment of the present invention will be described.
In the twenty-first embodiment, the metal / insulator multilayer structure is formed only by the LB film by the method according to the eleventh embodiment. More specifically, as shown in FIG. 39, a disk-shaped superlattice flake made of a periodic structure of an insulator film 71 and a metal film 72 in which each layer has a thickness accuracy on the order of molecular size is obtained. The thickness of the insulator film 71 is, for example, 10 to 100 nm, and the thickness of the metal film is, for example, 1 to 10 nm.

  Next, two sheets are prepared by cutting out a part of the disk-shaped superlattice slice as shown by the solid square in FIG. 40A and 40B show the superlattice slices 73 and 74 having a square shape cut out in this way. Then, as shown in FIGS. 40A, 40B, and 40C, the superlattice flake 74 is superposed on the superlattice flake 73 by rotating the orientation of the superlattice flake 74 by 90 degrees. In this way, a lattice that allows signals and information to be accessed as an artificial nervous system is completed as a minimum unit of a two-dimensional pattern. The accuracy of this lattice can be on the atomic layer order. Here, although the insulator film 71 and the metal film 72 of each superlattice thin piece 73 and 74 are strictly arc-shaped, the period of the metal film 72 is extremely small, for example, around 10 nm. The metal film 72 can be regarded as extending linearly. Therefore, this lattice has a structure substantially similar to that shown in FIG.

Assuming that the number of the metal films 72 of the superlattice thin pieces 73 and 74 is N, there are a total of N ² intersections between the metal film 72 of the superlattice thin piece 73 and the metal film 72 of the superlattice thin piece 74. In this case, access to these intersections (addresses) can be easily performed through the metal films 72 of the superlattice slices 73 and 74. For example, as shown in FIG. 40C, it is possible to control which address is accessed by connecting relay circuits 75 and 76 to the metal films 72 at the edges of the superlattice slices 73 and 74, respectively. Specifically, for example, when one side of the superlattice thin pieces 73 and 74 is 1 cm and the interval between the metal films 72 is 10 nm, 1 cm / 10 nm = 10 ⁻² m / 10 ⁻⁸ m = 10 ⁶ to 2 ²⁰ . However, since, for example, 2 ²⁰ to 10 ⁶ electrodeposited metal films 62 can be selected by the 20-stage relay circuits 73 and 74, for example, information (about one degree of freedom in the xy plane) can be used for addressing with an address of about 20 bits. Can control access.

At the N ² intersections of the metal film 72 of the superlattice thin piece 73 and the metal film 72 of the superlattice thin piece 74, a structure having a desired function generated by bottom-up is provided. For this purpose, for example, the superlattice flakes 73 may be used as a substrate to grow quantum dots on the substrate by self-organization, and the superlattice flakes 74 may be superposed thereon in the same manner as described above. Alternatively, a functional material layer (for example, an inorganic molecule or an organic molecule) is sandwiched between the superlattice thin pieces 73 and 74, and energy is injected by, for example, applying current between the metal films 72 that intersect and face each other. As a result, a structure in which a bottom-up structure is provided between the superlattice flakes 73 and 74 can be manufactured using the self-organized critical phenomenon caused by the above.

When bottom-up structures provided at N ² intersections of superlattice slices 73 and 74 are finally formed by energy injection and dissipation, these bottom-up structures are self-aligned without any alignment. It can be automatically formed at each intersection. In this case, the metal films 72 of the superlattice thin pieces 73 and 74 do not necessarily have to be orthogonal to each other, and only have to be connected to the edges. Each bottom-up structure may be, for example, a simple memory element or a bottom-up element having a high function by the self-organization described above. The dimension of the mesh structure formed by the metal film 72 of the superlattice slices 73 and 74 is between 1 and dimension 2 of the bottom-up system (in this case, the planar system), and the dimension of the biological nervous system is that of the cell system. A relationship equivalent to being smaller than the dimension holds. The material substance that forms the bottom-up structure can be introduced by, for example, intercalation. Prior to the intercalation, the knife edge of the metal film 72 can be sharpened by electrolytic etching, thereby further enhancing the surface enhancement effect, and the intersection of the metal films 72 of the superlattice slices 73 and 74. It is also possible to make the bottom-up structure arranged in the part a smaller number of atomic groups (molecular groups).

  The above two-dimensional structure having a bottom-up structure sandwiched between the intersections of the superlattice slices 73 and 74 is connected to a silicon LSI to produce a functional element. That is, as shown in FIG. 41A, the above-described two-dimensional structure 82 is mounted on the substrate 81, and the metal film 72 of the superlattice thin piece 74 is connected to the wiring connection portion 84 via the connection pad 83, and the superlattice The metal film 72 of the thin piece 73 is connected to the wiring connection portion 85. The connection pad 83 has a sleeper shape, and the thickness thereof is substantially equal to the difference in height between the upper surface of the wiring connection portion 84 and the lower surface of the superlattice thin piece 74. FIG. 41B is an enlarged view of the connection portion between the metal film 72 of the superlattice thin piece 74 and the connection pad 83, and the insulator film formed on the connection pad 83 via the insulator 83a having a narrow width. The electrode part 83 b having a width equal to the width (thickness) 71 is connected to the metal film 72. FIG. 41C is an enlarged view of the connection part between the metal film 72 of the superlattice thin piece 73 and the wiring connection part 85, and is formed in the wiring connection part 85 via a narrow insulator 85 a. The electrode portion 85b having a width substantially equal to that of the insulator film 71 and the metal film 72 are connected. The wiring connection portions 84 and 85 are connected to a top-down LSI 87 having a desired function via the wiring 86, and as a result, the two-dimensional structure 82 and the LSI 87 are connected. In this way, a functional element is obtained. The LSI 87 is typically a silicon LSI, but may be an LSI using another semiconductor, for example, a compound semiconductor such as GaAs. The LSI 87 may be a chip mounted on the substrate 81, or a semiconductor substrate such as a silicon substrate may be used as the substrate 81, and a circuit may be formed on the semiconductor substrate using an LSI process.

The connection between the metal film 72 of the superlattice thin pieces 73 and 74 and the external connection pad 83 or the wiring connection portion 85 may be N connections per side. The ratio between the number of connections and the number of intersections of the superlattice slices 73 and 74 where the bottom-up structure is provided is scaled by 1 / N. For this reason, as N becomes larger, in other words, as the degree of integration increases, the alignment error decreases as compared with the conventional method in which the N ² alignment error occurs. Therefore, the device manufacturing yield is improved as compared with the conventional method. Can do. In particular, as shown in FIGS. 41B and 41C, the width of the electrode portion 83b of the connection pad 83 is substantially equal to the width (thickness) of the insulator film 71, which is a dielectric of the superlattice thin piece 74, and the wiring connection portion. The width of the electrode portion 85b of 85 can be set substantially equal to the width (thickness) of the insulator film 71, which is a dielectric of the superlattice thin piece 74, so that the metal film 72 and the electrode portion of the superlattice thin pieces 73 and 74 can be set. The margin for alignment with 83b and 85b can be increased, which also contributes to the improvement of the device manufacturing yield.

As described above, the top-down system composed of LSI 87 typified by silicon LSI or the like projects time non-continuously and has a spatially anisotropic structure (time projection property). , Spatial orientation) = (↓, ↓). In addition, the bottom-up structure sandwiched between the superlattice flakes 73 and 74 is formed by an autonomous distributed generation rule, so that time is continuously projected, and the local rule has globality. Therefore, there is no special direction and isotropic structure, that is, (time projection property, spatial orientation) = (↑, ↑) structure. Even if both structures are arranged directly next to each other, the arrows will flip (↑, ↑) (↓, ↓), so they will not be connected immediately. On the other hand, as described above, the above-described two-dimensional structure 82 has a structure having anisotropy in one direction of spatial coordinates formed by continuously projecting time in the growth direction, that is, ( Time projection, spatial orientation) = (↑, ↓). 41A, 41B, and 41C, the two-dimensional structure 82, that is, the (↑, ↓) structure is used as the bottom-up structure, that is, the (↑, ↑) structure and the top-down LSI 87, that is, ( ↓, ↓) By interposing with the structure, it becomes (↑, ↑) (↑, ↓) (↓, ↓), and the arrows are connected without flipping between the structures, so (↑ , ↑) structure and (↓, ↓) structure, that is, the bottom-up system and the top-down system can be connected well without losing the individual accessibility.
Thus, according to the twenty-first embodiment, it is possible to easily realize a high-functional functional element that can make the most of the advantages of the bottom-up system and the top-down system represented by silicon LSI. . This functional element can express various functions by combining the function given to the bottom-up system and the function given to the silicon LSI.

Next, a twenty-second embodiment of the present invention is described. In the twenty-second embodiment, quantum dots are particularly used as a bottom-up structure.
As shown in FIG. 42, in the twenty-second embodiment, the two-dimensional structure 82 is mounted at the center of the substrate 81. In this case, the superlattice slices 73 and 74 of the two-dimensional structure 82 are mounted. Quantum dots 91 are sandwiched between the cross points of the metal film 72 as a bottom-up structure. Here, since the period and thickness of the metal film 72 of the superlattice thin pieces 73 and 74 can be made sufficiently smaller than the size of the quantum dot 91, the cross intersection of the metal film 72 of the superlattice thin pieces 73 and 74 and the quantum dot 91. Does not necessarily correspond one-to-one. In other words, it is not necessary that the quantum dots 91 are attached to all the cross intersections, but each quantum dot 91 is always accompanied by a cross intersection. This redundancy improves the yield of the quantum dot device and can also serve as a side gate to the diode consisting of a cross with the quantum dot as an active part, which has been extremely difficult in the past. The three-terminal element can also be realized. In particular, as superlattice thin pieces 73 and 74, a laminated repetitive structure of a two-layer structure of a conductive layer sandwiched between very thin dielectrics and a slightly thicker dielectric, that is, a structure having two large and small frequencies as spatial frequencies. It is effective to use those.

  The structure shown in FIG. 42 can also be applied as a flat display. In this case, a luminescent quantum dot is used as the quantum dot 91, but a luminescent organic molecular monomer, oligomer, or polymer may be used. In this case, as described above, since there is a degree of freedom in setting the thickness of the superlattice thin pieces 73 and 74, the metal film 72 has a high conductivity and is configured as a very thin conductive line. Has the advantage of being able to According to this flat display, since the area of the cross intersection is small, it is less likely to be shaded and a bright screen can be realized with low power consumption. Further, although not shown in the drawing, each metal film 72 in the vertical and horizontal directions in FIG. 42, that is, each conductive line, is composed of a conductive layer two-layer structure sandwiching an extremely thin dielectric as described above and a slightly thicker dielectric. Redundancy introduced by using a stacked repetitive structure, that is, a structure having two large and small spatial frequencies, can reduce the risk of pixel dropping due to defective active parts, for example, and improve the manufacturing yield. be able to.

  Furthermore, the arrangement of FIG. 42 can be used not only as an optical element but also as an electronic element by controlling the arrangement and charge state of the functional group of the π-electron organic molecule sandwiched between the crossed portions. Although it can be used as an integrated molecular electronics device, the above-mentioned redundancy obtained by using a superlattice flake structure having two spatial and large frequencies is the fault tolerance (defect tolerance) required for molecular electronics devices. It is extremely effective in enhancing the property).

The outer peripheral portion 81a of the substrate 81 is a region where the top-down type LSI is arranged, but it is not necessarily arranged in all four directions, and may be arranged in a part.
In some cases, a top-down LSI can be arranged above and below the entire surface including the central portion of the substrate 81 in a multilayer structure.
The frame portion 81b around the two-dimensional structure 82 is connected to a parallel metal film 72 in the x and y directions that accesses the N ² intersections of the two-dimensional structure 82 in the same arrangement as in FIGS. 41B and 41C. To do.
Other than the above are the same as in the twenty-first embodiment as long as they are not contrary to the properties.
According to the twenty-second embodiment, the same advantages as those of the twenty-first embodiment can be obtained.

Next, a twenty-third embodiment of the present invention is described.
As shown in FIG. 43, in the twenty-third embodiment, instead of the quantum dot array used as the bottom-up structure in the twenty-second embodiment, a surface having a hierarchical structure having self-similarity, that is, a fractal. The surface 92 having the structure is used as a bottom-up structure. In this case as well, the above-described redundancy obtained by using a superlattice flake structure having two large and small frequencies as spatial frequencies is extremely effective in increasing the robustness of the system.
Other than the above are the same as in the twenty-first and twenty-second embodiments as long as they are not contrary to the nature thereof.
According to the twenty-third embodiment, the same advantages as those of the twenty-first and twenty-second embodiments can be obtained.

Next, a twenty-fourth embodiment of the present invention is described.
In the twenty-fourth embodiment, the functional element according to the twenty-first embodiment shown in FIG. 41 that is specialized for a ROM will be described. Here, for example, the thickness of the insulator film is 10 to 100 nm, and the thickness of the metal film is 1 to 10 nm. Further, as the LSI 87 connected to the metal films of the superlattice thin pieces 73 and 74, an LSI 87 including an inverter group (decoder) is used.

FIG. 44 schematically shows the ROM circuit. In this ROM, if the number of metal films of the superlattice thin pieces 73 and 74 is N, there are a total of N ² intersections between the metal film of the superlattice thin piece 73 and the metal film of the superlattice thin piece 74. The capacity of the ROM is N ² bits. The N metal films of the superlattice thin piece 74 are numbered j = 1 to N, and the N metal films of the superlattice thin piece 73 are numbered i = 1 to N. A thin natural oxide film (not shown) (for example, an Al ₂ O ₃ film when the metal film is made of Al) is formed on the surface of the metal film exposed on the opposing main surfaces of the superlattice thin pieces 73 and 74. Therefore, at each intersection, the metal film of the superlattice thin piece 73 and the metal film of the superlattice thin piece 74 are opposed to each other through this natural oxide film. One end of each of the N metal films of the superlattice thin piece 73 is connected to one end of an inverter I _j (j = 1 to N) made of an n-channel FET. The other end of the inverter I _j is grounded. One end of the N metal films of the superlattice thin piece 73 is connected to a predetermined power source via a load resistance R _L.

Next, the operation principle of this ROM will be described.
First, a method for writing information will be described. Consider a case where information is written to the memory cell A _ij at the address (i, j). A high level signal is input to the gate G _j of the n-channel FET constituting the inverter I _j connected to the jth metal film of the superlattice flake 74 to conduct it, and in this state, the superlattice flake 73 is supplied by the power supply. By applying a sufficiently high voltage between the metal film and the metal film of the superlattice thin piece 74, the natural oxide film between these metal films breaks down and is made conductive. If, for example, information “1” is written in the conductive part, it can be considered that the natural oxide film is not broken down and information “0” is written in the non-conductive part. Information is written by performing this operation on all of the memory cells at the selected address.

Next, a method for reading information will be described. Consider a case where the information of the memory cell A _{ij at} the address (i, j) is read. First, a high-level signal is input to the gate G _j of the n-channel FET constituting the inverter I _j connected to the j-th metal film of the superlattice flake 74, and the i-th of the superlattice flake 73 is turned on. A high level voltage is applied by a power source connected to one end of the metal film. At this time, if the memory cell A _ij information "1" is written, that is, if you are conducting the natural oxide film at the intersection of the memory cell A _ij, superlattice thin piece through the load resistor R _L A current flows through the i-th metal film 73, and as a result, the potential of the other end A _i ′ of the metal film becomes a low level. When a low-level signal is input to the gate G _j of the n-channel FET constituting the inverter I _j , no conduction occurs, so that a current flows through the load resistor R _L to the i-th metal film of the superlattice slice 73. As a result, the potential of the other end A _i ′ of this metal film is held at a high level. On the other hand, if the memory cell A _ij information "0" is written, that is, in the case of not conducting the natural oxide film is the intersection of the memory cell A _ij, conduction n-channel FET forming an inverter I _j Regardless of whether or not the current flows, the current does not flow through the load resistance R _L to the i-th metal film of the superlattice slice 73, and as a result, the potential of the other end A _i ′ of the metal film becomes high level. Retained.

As described above, according to the twenty-fourth embodiment, a novel ROM using superlattice slices 73 and 74 in the memory cell portion can be realized. This ROM can have a large capacity of, for example, 10 to 160 Gbit / cm ² . In addition, since it can be configured flexibly, it can be mounted on various electronic devices. Further, in this ROM, the superlattice slices 73 and 74 can be formed in a lithography-free manner, so that the manufacturing cost can be kept low. For example, it can be used as a disposable memory and used for a ubiquitous information device or the like. Is preferable.

Next, a twenty-fifth embodiment of the present invention is described.
In the twenty-fifth embodiment, in the ROM according to the twenty-fourth embodiment, a so-called nanobridge structure (Non-patent Document 12) is used at the intersection of the metal film of the superlattice thin piece 73 and the metal film of the superlattice thin piece 74. . In addition, a Cu film is used as the metal film of the superlattice thin piece 73, a Ti film is used as the metal film of the superlattice thin piece 74, and a Cu ₂ S film is used as a material to be inserted at these intersections.

FIG. 45A shows the structure of the intersection of these metal films. In FIG. 45A, reference numeral 141 denotes a Cu film as a metal film of the superlattice thin piece 71, 142 denotes a Ti film as a metal film of the superlattice thin piece 72, and 143 denotes a Cu ₂ S film inserted therebetween. In this case, when a negative voltage is applied to the Ti film 142, an oxidation reaction occurs on the surface of the Cu film 141, and Cu atoms become Cu ⁺ and dissolve into the Cu ₂ S film 143. A reduction reaction occurs on the surface of the Ti film 142, and Cu ⁺ in the Cu ₂ S film 143 is deposited as Cu. Reference numeral 144 denotes this Cu deposition region. As shown in FIG. 45B, when the deposited Cu reaches the Cu film 141 and forms a metal bridge composed of the Cu deposition region 144, the nanobridge is turned on. When a positive voltage is applied to the Ti film 142, a reverse reaction occurs, and as shown in FIG. 45C, the metal bridge disappears and the off state is entered. By utilizing the above phenomenon, information can be written in the memory cell.
Other than the above, it is almost the same as the twenty-fourth embodiment.
According to the twenty-fifth embodiment, in addition to the same advantages as those of the twenty-fourth embodiment, it is possible to obtain the advantage that information can be written into the memory cells nondestructively.

Next, a twenty-sixth embodiment of the invention is described.
The twenty-sixth embodiment is a functional element characterized in that, in a structure in which time is continuously woven, the structure is accessed from a direction orthogonal to the woven direction. This functional element has a thin piece composed of a periodic structure of a conductor layer such as a strip-like or ribbon-like metal layer and a non-metal layer having a thickness equal to or greater than the thickness of the conductor layer. The light (such as sunlight) is accessed from the direction intersecting with, preferably the direction orthogonal to.
Specifically, FIGS. 46A, B and C show an organic solar cell according to the twenty-sixth embodiment. 46A is a front view, FIG. 46B is a back view, and FIG. 46C is a side view. As shown in FIGS. 46A, 46B, and 46C, this organic solar cell is formed in a spiral shape with an organic semiconductor layer 153 interposed between an anode electrode 151 and a cathode electrode 152. It has a thin disk shape. On the back surface of the organic solar cell, linear extraction electrodes 154 and 155 are formed along the radial direction from the center. Here, the extraction electrode 154 is in contact with the anode electrode 151, and the extraction electrode 155 is in contact with the cathode electrode 152.

The organic semiconductor layer 153 has a heterojunction type or bulk heterojunction type structure. In the organic semiconductor layer 153 having a heterojunction type structure, the p-type organic semiconductor film and the n-type organic semiconductor film are bonded so as to be in contact with the anode electrode 151 and the cathode electrode 152, respectively. The organic semiconductor layer 153 having a bulk heterojunction structure is formed of a mixture of p-type organic semiconductor molecules and n-type organic semiconductor molecules, and has a fine structure in which the p-type organic semiconductor and the n-type organic semiconductor are intricately in contact with each other. As the material of the organic semiconductor layer 153, all materials generally reported as materials for organic solar cells can be used. Specifically, polyacetylene (preferably disubstituted polyacetylene), poly (p- Phenylene vinylene), poly (2,5-thienylene vinylene), polypyrrole, poly (3-methylthiophene), polyaniline, poly (9,9-dialkylfluorene) (PDAF), poly (9,9-dioctylfluorene-co - bithiophene) (F8T2), poly (1-hexyl-2-phenylacetylene) (PH _X PA), poly (diphenyl acetylene) derivative (PDPA- _n Bu), poly (pyridine) (PPy), poly (pyridyl vinylene) (PPyV), cyano-substituted poly (p-phenylene vinylene) (CNPPV), poly ( , 9-di-tert-butylindeno [1,2-b] fluorene (PIF), etc. For these organic semiconductor dopants, alkali metals (Li, Na, K, Cs) are used as donors. As acceptors, halogens (Br ₂ , I ₂ , CI ₂ ), Lewis acids (BF ₃ , PF ₅ , AsF ₅ , SbF ₅ , SO ₃ ), transition metal halides (FeCl ₃ , MoCl _{5) can be used.} , WCl ₅ , SnCl ₄ ), TCNE and TCNQ can be used as organic acceptor molecules, and dopant ions used for electrochemical doping include tetraethylammonium ion (TEA ⁺ ) and tetrabutylammonium ion as cations. ^{(TBA +), Li +,} Na +, K +, as the anion ClO ₄ ^-, BF ₄ ^{-, _{F 6 -, AsF 6 -,}} SbF 6 - or the like can be used.

  As the organic semiconductor layer 153, a polymer electrolyte can also be used. Specific examples of this polymer electrolyte include polyanions such as sulfonate polyaniline, poly (thiophene-3-acetic acid), sulfonate polystyrene, poly (3-thiophene alkane sulfonate), and the like. , Polyallylamine, poly (p-phenylene-vinylene) precursor polymer, poly (p-methylpyridinium vinylene), protonated poly (p-pyridylvinylene), polotone (2-N-methylpyridinium acetylene), etc. Can do.

The anode electrode 151 and the cathode electrode 152 are preferably made of metals having different work functions. Specifically, for example, the anode electrode 151 is made of Au or Ni, and the electrode 152 is made of Al.
Taking an example of the dimensions of each part of the organic solar cell, the thickness of the organic semiconductor layer 153 is 70 to 100 nm, and the thicknesses of the anode electrode 151 and the cathode electrode 152 are each about 100 nm. The height (thickness) of the organic solar cell, and hence the height of the organic semiconductor layer 153, is almost completely or completely absorbed and photoelectrically converted from light incident from a direction perpendicular to the surface of the organic solar cell. In particular, the height is selected to be about several μm to 1 mm.

Next, an example of the manufacturing method of this organic solar cell is demonstrated. Here, a case where the organic semiconductor layer 153 has a heterojunction type structure in which a p-type organic semiconductor film and an n-type organic semiconductor film are joined will be described.
That is, using a columnar substrate 53, while rotating the substrate 53, the cathode electrode 152 is first formed by the LB method or the alternate adsorption method, then the n-type organic semiconductor film is formed, and then the p-type organic semiconductor is formed. A semiconductor film is formed, and then an anode 151 is formed.

  According to the twenty-sixth embodiment, since the anode 151 and the cathode 152 are formed in a spiral shape with the organic semiconductor layer 153 interposed therebetween, an organic solar cell is configured in a thin disk shape. The area of the pn junction per unit area of the organic solar cell is extremely large. When light is incident on the surface of the organic solar cell in the vertical direction, the light absorption region of the organic semiconductor layer 153 can be increased. In addition, the organic semiconductor layer 153 generally has high electric resistance, but since the thickness of the organic semiconductor layer 153 can be sufficiently reduced, the electric resistance can be sufficiently reduced. For this reason, it is possible to realize a flexible organic solar cell with high photoelectric conversion efficiency.

Next, a twenty-seventh embodiment of the invention is described.
47A, B and C show an organic solar cell according to the twenty-seventh embodiment. 47A is a front view, FIG. 47B is a back view, and FIG. 47C is a side view. As shown in FIGS. 47A, B and C, this organic solar cell is formed in a hexagonal spiral shape with an organic semiconductor layer 153 sandwiched between an anode electrode 151 and a cathode electrode 152 as a whole. It has the shape of a thin hexagonal plate. Other configurations are the same as those in the twenty-sixth embodiment.

Next, an example of the manufacturing method of this organic solar cell is demonstrated. Here, a case where the organic semiconductor layer 153 has a heterojunction type structure in which a p-type organic semiconductor film and an n-type organic semiconductor film are joined will be described.
That is, using a hexagonal columnar substrate 53, while rotating the substrate 53, the cathode electrode 152 is first formed by the LB method or the alternate adsorption method, then the n-type organic semiconductor film is formed, and then the p-type organic semiconductor is formed. A semiconductor film is formed, and then an anode 151 is formed.

  According to the twenty-seventh embodiment, the same advantages as in the twenty-sixth embodiment can be obtained, and the following advantages can also be obtained. That is, since the organic solar cell according to the twenty-seventh embodiment has a hexagonal shape, the organic solar cell can be spread over the entire surface as shown in FIG. For this reason, the electric power generation amount per unit area can be increased significantly.

Next, a twenty-eighth embodiment of the present invention is described.
In the twenty-eighth embodiment, a magnetic recording apparatus using a spin tunnel junction (see, for example, Non-Patent Document 13 and Patent Document 1) will be described.
In this magnetic recording apparatus, in the same configuration as the ROM according to the twenty-fourth embodiment, a Co film is used as the metal film of the superlattice thin pieces 73 and 74, and Al is used as a material sandwiched between these superlattice thin pieces 73 and 74. _{A 2} O ₃ film is used. Here, for example, the thickness of the Al ₂ O ₃ film is 2 nm, and the thickness of the Co film is 10 to 50 nm. In this case, the structure in which the edges of the two-layered strip-like or ribbon-like Co film, which is a ferromagnetic metal, cross each other through the Al ₂ O ₃ film is a spin tunnel junction. At this time, electrons move in the direction along the width direction of the strip-like or ribbon-like structure across the crossing portion which is the active site.
According to the twenty-eighth embodiment, a novel magnetic recording apparatus with ultra-high density can be realized.

Next, a twenty-ninth embodiment of the present invention is described.
In this 29th embodiment, a catalytic reaction platform will be described.
As shown in FIG. 49, this catalytic reaction platform has a structure in which a plurality of superlattice slices 73 are stacked in parallel with each other at a predetermined interval. FIG. 45A shows one superlattice flake 73. As the insulator film and the metal film of the superlattice thin piece 73, an oxide film 181 such as a TiO ₂ film and a SiO ₂ film and a metal film 182 such as an Au film, a Pd film, and a Pt film are used. Here, for example, the thickness of the oxide film 181 is 10 to 100 nm, and the thickness of the metal film 182 is 0.5 to 10 nm. FIG. 50B shows an enlarged view of the vicinity of the end of the metal film 182 exposed on one main surface of the superlattice slice 71. As shown in FIG. 50B, the end of the metal film 182 has a convex surface, and its radius of curvature is about the same as its thickness, that is, about 0.5 to 10 nm.

The method for using this catalytic reaction platform is as follows.
As shown in FIG. 51A, this catalytic reaction platform is placed in a predetermined reaction apparatus, and a reaction gas is allowed to flow in parallel to the superlattice slice 73 from one side and flow out from the other side. At this time, the reactive gas comes into contact with the surface of the end portion of the metal film 182 exposed on one main surface of the superlattice slice 73, but the radius of curvature of this end portion is extremely small, about 0.5 to 10 nm. The catalytic activity of the surface of the part is extremely high. As a result, as shown in FIG. 51B, the reaction speed of the gas molecules 183 is greatly increased due to the catalytic action of the surface of the end of the metal film 182.
As described above, according to the twenty-ninth embodiment, by using the superlattice flake 71 having a convex surface with a radius of curvature of about 0.5 to 10 nm at the end of the metal film 182 exposed on one main surface. A highly efficient catalytic reaction platform can be realized.

As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, The various deformation | transformation based on the technical idea of this invention is possible.
For example, the numerical values, materials, shapes, arrangements, and the like given in the above-described embodiments are merely examples, and different numerical values, materials, shapes, arrangements, and the like may be used as necessary.
In the fifth embodiment, a plurality of barrier pieces 65 are attached to a pair of integrated rings 63 and 64. Instead of the rings 63 and 64, for example, a bicycle chain or a bulldozer is used. The barrier piece 65 may be attached to a closed belt that circumscribes a plurality of rings and moves like a belt conveyor like a caterpillar.
Further, for example, as a layer sandwiched between superlattice flakes, a ferroelectric material type or PrCaMnO type giant magnetoresistive material may be used in addition to a π-electron conjugated organic molecular material or a biomolecular material.

When linking (↑, ↑) and (↓, ↓), depending on the purpose, instead of having the properties of (↑, ↓) already described, those having the properties of (↓, ↑), Alternatively, a structure having a discontinuous projection in time and an isotropic structure in space may be used.
The brain-derived structure, which is one of the categories of the top-down structure described above, includes tangible and intangible. The former is a physical architecture such as hardware with a three-dimensional reality, and the latter includes an intelligent architecture such as an intelligent academic system, database, and software. Furthermore, gene-derived structures, which are one of the categories of bottom-up structures, include not only structures at the cell / tissue level but also organs such as skeletons and organs.

  Furthermore, the connection / integration between bottom-up and top-down is not applied only to hardware in a narrow sense, but can be applied to various situations where two systems that are incompatible with each other collide with each other. For example, we will carefully examine the attributes of both systems, identify and extract pairs of conflicting properties (↑, ↑) and (↓, ↓), and then (↑, ↓) ) In the middle layer (a measure to become a cushioning material) (and if necessary, iterate iteratively and iteratively) It moves from the top based on pre-set plans such as corporate management and administration (hierarchy top), which are inherent in the layers (such as the end of the hierarchy) such as consumers that form mass It can also function as a software-like mechanism (on the business model or service model) when matching the rules and planning that come.

Further, (x ₁ , x ₂ ,..., X _N ) can be extended to an N component system, and it can be coupled between a plurality of components such as x _i and x _j , and x _i is also ↑, ↓ Needless to say, it may be a multi-valued (discrete) variable as well as the binary value.

It is a basic diagram for demonstrating this invention. It is a basic diagram for demonstrating this invention. It is a basic diagram for demonstrating TPC. It is a basic diagram for demonstrating TPC. It is a basic diagram for demonstrating this invention. It is a basic diagram for demonstrating this invention. It is a basic diagram for demonstrating this invention. 3 is a drawing-substituting photograph showing a dark field image, a lattice image, and a diffraction pattern by a transmission electron microscope for explaining the growth of an AlAs / GaAs diatomic superlattice. It is a basic diagram for demonstrating an electrochemical growth mechanism. It is a basic diagram for demonstrating this invention. It is a basic diagram which shows the calculation result of the electric field distribution of the cross | intersection part shown in FIG. 10A. It is a basic diagram which shows the calculation result of the electric field distribution of the cross | intersection part shown in FIG. 10A. It is a basic diagram which shows the calculation result of the electric field distribution of the cross | intersection part shown in FIG. 10A. It is a basic diagram which shows the calculation result of the electric field distribution of the cross | intersection part shown in FIG. 10A. It is a basic diagram which shows the calculation result of the electric field distribution of the cross | intersection part shown in FIG. 10B. It is a basic diagram which shows the calculation result of the electric field distribution of the cross | intersection part shown in FIG. 10B. It is a basic diagram which shows the calculation result of the electric field distribution of the cross | intersection part shown in FIG. 10B. It is a basic diagram which shows the calculation result of the electric field distribution of the cross | intersection part shown in FIG. 10B. It is a basic diagram for demonstrating this invention. It is a basic diagram for demonstrating the conventional LB method. It is a basic diagram for demonstrating the conventional LB method. It is a basic diagram for demonstrating the conventional LB method. It is a basic diagram for demonstrating LB method by this invention. It is an approximate line figure for explaining a 1st embodiment of this invention. It is an approximate line figure for explaining a 1st embodiment of this invention. It is an approximate line figure for explaining a 1st embodiment of this invention. It is a basic diagram for demonstrating 2nd Embodiment of this invention. It is an approximate line figure for explaining a 3rd embodiment of this invention. It is an approximate line figure for explaining a 4th embodiment of this invention. It is a basic diagram for demonstrating 5th Embodiment of this invention. It is a basic diagram for demonstrating 5th Embodiment of this invention. It is an approximate line figure for explaining a 7th embodiment of this invention. It is a basic diagram for demonstrating 8th Embodiment of this invention. It is a basic diagram for demonstrating 8th Embodiment of this invention. It is a basic diagram for demonstrating 8th Embodiment of this invention. It is an approximate line figure for explaining a 9th embodiment of this invention. It is a basic diagram for demonstrating 17th Embodiment of this invention. It is a basic diagram for demonstrating 19th Embodiment of this invention. It is a basic diagram for demonstrating 21st Embodiment of this invention. It is a basic diagram for demonstrating 21st Embodiment of this invention. It is a basic diagram for demonstrating 21st Embodiment of this invention. It is a basic diagram for demonstrating 22nd Embodiment of this invention. It is a basic diagram for demonstrating 23rd Embodiment of this invention. It is a basic diagram for demonstrating 24th Embodiment of this invention. It is a basic diagram for demonstrating 25th Embodiment of this invention. It is a basic diagram for demonstrating 26th Embodiment of this invention. It is a basic diagram for demonstrating 27th Embodiment of this invention. It is a basic diagram for demonstrating 27th Embodiment of this invention. It is an approximate line figure for explaining a 29th embodiment of this invention. It is an approximate line figure for explaining a 29th embodiment of this invention. It is an approximate line figure for explaining a 29th embodiment of this invention.

Explanation of symbols

31 ... One-dimensional superlattice, 33, 34 ... Superlattice flake, 71, 72 ... Superlattice flake, 115, 116 ... Superlattice flake, 41, 42 ... Conductor strip, 46, 47 ... Dielectric layer, 51, 69 ... trough, 52 ... water, 53 ... substrate, 54 ... film forming droplet dropping device, 55, 60, 61 ... monomolecular film, 63, 64 ... ring, 65 ... barrier piece, 67, 68 ... dividing wall, 71 ... Insulator film, 72 ... metal film, 73, 74 ... relay circuit, 82 ... two-dimensional structure, 83 ... connection pad, 84,85 ... wiring connection part, 87 ... LSI, 91 ... quantum dot, 92 ... fractal structure surface having, 131 ... resin substrate, 132 ... nanostructure die 133 ... metal film, 141 ... Cu film, 142 ... Ti film, 143 ... Cu ₂ S layer, 151 ... anode electrode, 152 ... cathode electrode, 153 ... organic Semiconductor film, 162... Scan film, 181 ... oxide film, 182 ... metal film

Claims (33)

  A method for producing a thin film laminated structure, comprising producing an integrated thin film laminated structure by accumulating thin films in a non-reciprocal process while rotating a columnar or polygonal columnar substrate having an elliptical cross section.   2. The method of manufacturing a thin film laminated structure according to claim 1, wherein the thin film laminated structure is cut into pieces by cutting from a direction perpendicular to the rotation axis of the substrate.   The method for producing a thin film laminated structure according to claim 1 or 2, wherein a monomolecular film is accumulated as the thin film by an LB method.   2. The method of manufacturing a thin film laminated structure according to claim 1, wherein the thin films are accumulated by an alternating adsorption method.   2. The thin film laminated structure according to claim 1, wherein the step of forming a monomolecular film as the thin film with a constant surface pressure and the step of transferring the monomolecular film onto the substrate are non-reciprocal steps. Body manufacturing method.   A thin film laminated structure, wherein thin films are integrally formed by accumulating thin films by a non-reciprocal process while rotating a columnar or polygonal columnar substrate having an elliptical cross section.   7. The thin film laminated structure according to claim 6, wherein the thin film laminated structure is cut into pieces by cutting from a direction perpendicular to the rotation axis of the substrate.   A method of manufacturing a functional element, comprising a step of manufacturing an integrated thin film laminated structure by accumulating thin films in a non-reciprocal process while rotating a columnar or polygonal columnar substrate having an elliptical cross section.   A functional element using a thin film laminated structure formed integrally by accumulating thin films in a non-reciprocal process while rotating a columnar or polygonal columnar substrate having an elliptical cross section.   A method of manufacturing a thin film laminated structure, comprising: accumulating thin films while rotating a columnar or polygonal columnar substrate having an elliptical cross section while being partially submerged in a liquid.   11. The thin film laminated structure according to claim 10, wherein a monomolecular film is accumulated as the thin film by an LB method, and at this time, a structural destructive force applied to the monomolecular film is suppressed within an intermolecular force. Body manufacturing method.   A method for producing a thin film laminated structure, characterized in that a thin film is accumulated while rotating a columnar or polygonal columnar substrate having an elliptical cross section with a nanoscale or mesoscopic scale diameter.   A thin film laminated structure characterized by accumulating thin films while rotating a columnar or polygonal columnar substrate having an elliptical cross section with a nanoscale or mesoscopic scale diameter.   A method for producing a functional element, comprising a step of producing a thin film laminated structure by accumulating thin films while rotating a columnar or polygonal columnar substrate having an elliptical cross section having a diameter of nanoscale or mesoscopic scale.   A functional element using a thin film laminated structure in which thin films are accumulated while rotating a columnar or polygonal columnar substrate having an elliptical cross section with a nanoscale or mesoscopic scale diameter.   Production of a thin film laminated structure characterized by utilizing the interaction between a liquid flow and this monomolecular film when accumulating a monomolecular film while rotating a columnar or polygonal columnar substrate having an elliptical cross section Method.   A rotating member is provided with a plurality of barrier members rotatably about one end thereof on a container containing a liquid, and at least two of the plurality of barrier members are rotated by rotating the rotating member. A method for producing a thin film laminated structure, wherein a monomolecular film is formed by dripping a film forming liquid into the liquid between the barrier members at the same time soaking in a liquid.   18. The method of manufacturing a thin film laminated structure according to claim 17, wherein the monomolecular film is accumulated while rotating a columnar or polygonal columnar substrate having an elliptical cross section.   19. The method of manufacturing a thin film laminated structure according to claim 17, wherein the monomolecular film is accumulated while rotating the substrate while being partially submerged in the liquid.   The method for manufacturing a thin film laminated structure according to claim 1, wherein the thin film has a thickness of 1000 nm or less.   A plurality of barrier members are provided on a rotating member so as to be rotatable about one end thereof on a container containing liquid, and at least two of the plurality of barrier members are rotated by rotating the rotating member. An apparatus for producing a thin film laminated structure, wherein the apparatus is soaked in the liquid at the same time, and the film forming liquid is dropped into the liquid between the barrier members.   A heterostructure having a concentric superlattice cross section.   A heterostructure characterized in that the cross section is a broken arc-shaped structure.   A heterostructure having a spiral superlattice cross section.   A heterostructure characterized in that the cross section is a broken spiral structure.   A heterostructure characterized in that the cross section is a polygonal columnar superlattice structure.   A heterostructure characterized in that the cross section is a fractured polygonal columnar structure.   A heterostructure characterized in that the cross section is a concentric heteromaterial alternating laminate.   A heterostructure characterized in that the cross-section is a broken arc-shaped heteromaterial structure.   A heterostructure characterized in that the cross section is a spiral heteromaterial alternating laminate.   A heterostructure characterized in that the cross-section is a broken spiral heteromaterial structure.   A heterostructure characterized in that the cross section is a polygonal columnar heteromaterial alternating laminate. A heterostructure characterized in that the cross section is a broken polygonal columnar heteromaterial structure.

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