JP2006080194A - Temperature controller, exposure device and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a temperature controller capable of precisely controlling a temperature with a high response and a high output, and capable of being preferably applied even to an exposure device corresponding to an enlargement and an improvement in a throughput. <P>SOLUTION: The temperature controller 100 supplies each of a plurality of units (U1 to U4) of an exposure device body with temperature-controlled fluids, and has a medium-fluid flow path 130 in which a medium fluid for cooling or heating the fluids flows. The medium-fluid flow path 130 has a plurality of branch paths 130a to 130d corresponding to each of a plurality of the units (U1 to U4). Heat exchangers 114a to 114d for heat-exchanging the fluids and the medium fluid and flow controllers 135a to 135d controlling the flow rates of the medium fluid flowing in the heat exchangers 114a to 114d are arranged to each of a plurality of the branch paths 130a to 130d. Flow-rate fixing means (157, 158, 159 and 160) for keeping the quantities of the medium fluid flowing into a plurality of the branch paths 130a to 130d constant are mounted on the medium-fluid flow path 130. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a temperature control device for supplying a temperature-controlled fluid to a predetermined unit of an exposure apparatus main body.

  Conventionally, in the manufacturing process of electronic devices such as semiconductor elements and liquid crystal display elements, a circuit pattern formed on a mask (or reticle) is transferred onto a substrate (wafer, glass plate, etc.) coated with a resist (photosensitive material). An exposure apparatus is used.

  In recent years, in an exposure apparatus, the wavelength of an exposure illumination beam (exposure light) has been shortened with the miniaturization of circuits. For example, instead of mercury lamps which have been mainstream so far, light sources having a short wavelength such as KrF excimer laser (wavelength: 248 nm) and ArF excimer laser (193 nm) tend to be used. In an exposure apparatus using short wavelength light, precise temperature control of a space on the optical path of the exposure apparatus and a space where the exposure apparatus is arranged is required.

As a temperature control technique for the exposure apparatus, there is a technique for controlling the temperature of a temperature control fluid supplied to a predetermined unit of the exposure apparatus main body using an electric heater (see, for example, Patent Document 1).
JP 11-312632 A

  In recent electronic device manufacturing processes, the substrate has been increased in size and throughput has been increased, and a temperature control technology with higher accuracy is required. However, in the temperature control technology using an electric heater, it is difficult to control the temperature with high response, and the power consumption of the electric heater is greatly increased, and the operation cost is difficult to cope with the increase in substrate size and throughput. Increase.

The present invention has been made in view of the above-described circumstances, and is capable of precise temperature control with high response, high output, and temperature control that can be preferably applied to an exposure apparatus that supports large size and high throughput. An object is to provide an apparatus.
Another object of the present invention is to provide an exposure apparatus capable of improving the exposure accuracy.
Another object of the present invention is to provide a device manufacturing method capable of improving device quality.

In order to achieve the above object, the present invention adopts the following configuration corresponding to FIGS. 1 to 13 showing the embodiment.
The temperature control apparatus of the present invention is a temperature control apparatus for supplying a temperature-controlled fluid to each of a plurality of units (U1 to U4) of an exposure apparatus body, and a medium fluid for cooling or heating the fluid is provided. The medium fluid flow path (130) includes a plurality of branch paths (130a to 130d) through which the medium fluid flows, which are associated with each of the plurality of units. In each of the branch paths, a heat exchanger (114a to 114d) for exchanging heat between the fluid and the medium fluid, and a flow rate controller (135a to 135a) for controlling the flow rate of the medium fluid flowing through the heat exchanger. 135d), and the medium fluid flow path is provided with a flow rate stabilizing means for maintaining a constant amount of the medium fluid flowing into each of the plurality of branch paths. To do.

  In this temperature control device, the fluid temperature is controlled by heat exchange with the medium fluid. Temperature control using a fluid medium is easy to take a relatively large area (heat transfer area) for transferring heat to the fluid, and is suitable for high response and high output. That is, since the heat transfer area is wide, it is possible to precisely control the temperature of a large amount of fluid.

  Here, when the medium fluid flow path is branched into a plurality of paths, and heat exchange using the medium fluid is performed for each branch path, the influence of the flow fluctuation of the medium fluid in a certain branch path is influenced by the other branch paths. There are possibilities. That is, if the flow rate of the medium fluid used for heat exchange in a certain branch path varies greatly, the flow rate of the medium fluid flowing into the branch path varies greatly, and accordingly, the inflow amount of the medium fluid to other branch paths May change. A change in the inflow amount of the medium fluid tends to cause a delay in control of the fluid temperature and a decrease in control accuracy in the branch path.

  In the above temperature control apparatus, the flow rate of the medium fluid to each of the plurality of branch paths is kept constant by the flow rate stabilizing means. Therefore, heat exchange is stably performed in each branch path, and more precise temperature control is possible for each of the plurality of units.

  Specifically, for example, the flow rate stabilizing unit is configured to transfer the medium toward the heat exchanger (114c, 114d) for at least one branch path (130c, 130d) of the plurality of branch paths (130a to 130d). Detours (143a, 143b) for detouring part of the fluid, detectors (144a, 144b) for detecting fluctuations in the inflow or outflow amount of the medium fluid in the branch path, and detection results of the detectors And a detour amount controller (145a, 145b) for controlling the flow rate of the medium fluid flowing through the detour.

  According to this configuration, in at least one branch path of the plurality of branch paths, the overall flow rate of the medium fluid flowing through the branch path is kept constant. That is, even if the flow rate of the medium fluid flowing through the heat exchanger fluctuates by detecting the change in the inflow amount or outflow amount of the medium fluid in the branch path and controlling the detour amount based on the detection result, The fluctuation is absorbed by the detour. For example, in the branch path, when the flow rate of the medium fluid flowing through the heat exchanger increases, the flow rate of the medium fluid flowing through the detour (the bypass amount) decreases, and conversely when the flow rate of the medium fluid flowing through the heat exchanger decreases. Increase the amount. As a result, the overall flow rate of the medium fluid flowing through the branch path (the amount flowing through the heat exchanger + the bypass amount) is kept constant, and as a result, the amount of the medium fluid flowing into the branch path is kept constant.

  In this case, the detours (143a, 143b) are provided for the branch paths (130c, 130d) in which the flow variation of the medium fluid flowing through the heat exchanger is relatively large among the plurality of branch paths. Good.

  For branch paths with relatively large fluid flow fluctuations during heat exchange, the overall flow rate of the medium fluid is kept constant, preventing flow fluctuations in the branch paths from affecting other branch paths. Is done. As a result, the inflow amount of the medium fluid is kept substantially constant for each of the plurality of branch paths. Also, with this configuration, the configuration can be simplified as compared with the case where detours are provided for all of the plurality of branch paths.

  In the above temperature control apparatus, the plurality of branch paths (130a to 130d) include a first system (130a and 130b) in which the flow rate fluctuation of the heat medium flowing through the heat exchangers (114a to 114d) is relatively small. And the second system (130c, 130d) in which the flow rate variation of the heat medium flowing through the heat exchanger is relatively large, and the flow rate stabilizing means is the first system and the second system The configuration may be such that the inflow amount of the medium fluid to each of them is kept constant.

  According to this configuration, since the flow rate of the medium fluid into the first system and the second system is kept constant by the flow rate stabilizing means, heat exchange is stably performed in each system. Further, the configuration and control can be simplified by classifying the plurality of branch paths into the first system and the second system.

  Specifically, the medium fluid flow path (130) further includes an inlet branch pipe (155a) that divides the medium fluid going to the plurality of branch paths (130a to 130d) into the first system and the second system. The flow rate stabilizing means has a detour (157) for diverting a part of the medium fluid from the inlet branch pipe to the second system, and the first system or the second system A detector (158) for detecting a change in the inflow or outflow amount of the medium fluid, and a detour amount controller (159) for controlling the flow rate of the medium fluid flowing through the detour based on the detection result of the detector; It is good to include.

  According to this configuration, even if the flow rate of the medium fluid flowing through the heat exchanger in the second system varies greatly, the variation is absorbed by the detour. For example, when the flow rate of the medium fluid flowing through the heat exchanger in the second system increases, the flow rate (circulation amount) of the medium fluid flowing through the detour is reduced, and conversely, the medium fluid flowing through the heat exchanger in the second system is reduced. When the flow rate increases, the detour amount increases. As a result, the overall flow rate of the medium fluid flowing through the second system (the amount flowing through the heat exchanger + the bypass amount) is kept constant. As a result, the inflow amount of the medium fluid into the first system and the second system is also kept constant. Be drunk. Further, in this configuration, since the bypass control is collectively performed for a plurality of branch paths included in the second system, the configuration and the control can be simplified.

  Moreover, in said temperature control apparatus, the box (171) which accommodates each said flow controller (135a-135d) of each of these branch path (130a-130d) collectively, and the said several flow controller It is good also as a structure further equipped with the leak detection system (170) which detects the leak of this.

  According to this configuration, since the leak detection system detects leaks from a plurality of flow rate controllers, long-term and continuous stable temperature control is possible by performing maintenance work based on the detection results. Become.

  In this case, the leakage detection system (170) includes a first leakage detection system (170a) that detects a relatively small amount of leakage in each of the plurality of flow controllers (135a to 135d), and a plurality of the leakage detectors (170a). It is good to include the 2nd leak detection system (170b) which detects each comparatively large amount of leaks of a flow controller.

  As a result, the efficiency of maintenance work and the control stability of temperature control can be improved. For example, when a relatively small amount of liquid leakage is detected, a reduction in throughput is prevented by performing maintenance or replacement of the flow rate controller at the next maintenance time. In addition, when a relatively large amount of liquid leakage is detected, the occurrence of problems can be prevented by promptly maintaining or replacing the flow rate controller. Furthermore, since the stop time of the apparatus is suppressed, the temperature change of the medium fluid accompanying the stop of the apparatus is small, and the control stability of temperature control is improved.

  In this case, the first leakage detection system (170a) includes a plurality of detection wires (177a) individually associated with the leakage detector (176) and the plurality of flow controllers (135a to 135d). To 177d) and relays (178a to 178d) for switching the detection target of the leak detector to any of the plurality of detection wirings.

  Thereby, simplification of a structure is achieved compared with the case where a leak detector is provided in each of a plurality of flow controllers.

An exposure apparatus of the present invention is an exposure apparatus (EXP) that transfers a mask (R) pattern to a substrate via a projection optical system (PL), and includes the above-described temperature control apparatus (100). Yes.
The device manufacturing method of the present invention is characterized in that a device is manufactured using the exposure apparatus (EXP).

  According to the temperature control apparatus of the present invention, precise temperature control with high response and high output is possible, and the temperature control apparatus can be preferably applied to an exposure apparatus corresponding to an increase in size and throughput. It is also suitable for simplification of configuration and control.

  According to the exposure apparatus of the present invention, since the temperature is controlled with high accuracy by the temperature control device, the exposure accuracy can be improved.

  According to the device manufacturing method of the present invention, it is possible to improve device quality by improving exposure accuracy.

Next, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 schematically shows an example of a feature of a temperature control device according to the present invention. This temperature control apparatus 100a is applied to an exposure apparatus.

The temperature control apparatus 100a has an HFE system for supplying a temperature-controlled fluid (hydrofluoroether: HFE, Novec) to each of a plurality of units (U1, U2, U3, U4) of the exposure apparatus main body. The HFE system includes HFE circulation paths 110a, 110b, 110c, and 110d as fluid flow paths associated with the supply destination units (U1, U2, U3, U4). Moreover, the temperature control apparatus 100a has a hot water system for flowing a medium fluid (temperature medium fluid, hot water in this example) that controls the temperature of the HFE flowing through the HFE circulation paths 110a to 110d.
In this example, HFE is used as the temperature adjusting fluid. However, the present invention is not limited to this, and other fluids such as Fluorinert (FC) and H-Galden (HFPE) may be used.

  Here, the plurality of units to be temperature-controlled are the units (U1, U2) whose target temperature stability is strict although the variation in the thermal load is relatively small, and the target in which the variation in the thermal load is relatively large. It is classified into units (U3, U4) with relatively low temperature stability. In the temperature control apparatus 100a, the temperature control system for the units (U1, U2) with relatively small thermal load fluctuations is “constant temperature system”, and the temperature control system for the units (U3, U4) with relatively large thermal load fluctuations is “ The term “active system” is hereinafter referred to as necessary.

  In the warm water system, a warm water circulation path 130, which is a flow path for circulating warm water controlled to a target temperature, is branched into four paths (130a, 130b, 130c, and 130d) in association with supply destination units. In each of the branch paths 130a to 130d, heat exchangers 114a, 114b, 114c, and 114d for performing heat exchange with the HFE flowing through the HFE circulation paths 110a to 110d and hot water flowing through the heat exchangers 114a to 114d are provided. The flow rate control valves 135a, 135b, 135c, and 135d for controlling the flow rate are provided. The opening degree of the associated flow control valves 135a to 135d is controlled based on the instructions of the control systems 116a and 116b so that the HFE entering each unit becomes a target temperature (for example, 23 ° C.).

Among the hot water branch paths 130a to 130d, the active branch paths 130c and 130d are bypass circuits 143a and 143b for bypassing a part of the hot water toward the heat exchangers 114c and 114d, and the paths 130c and 130d, respectively. Flow rate detectors 144a and 144b that detect fluctuations in the flow rate of hot water in the water and detour amount control valves 145a and 145b that control the flow rate of hot water flowing in the detours 143a and 143b based on the detection results of the flow rate detectors 144a and 144b. And are provided. The detection results of the flow rate detectors 144a and 144b are sent to the control systems 146a and 146b. Based on the detection results of the flow rate detectors 144a and 144b, the control systems 146a and 146b control the opening amounts of the bypass amount control valves 145a and 145b so that the amount of warm water flowing out of the paths 130c and 130d is constant. .
The flow rate stabilizing means in the present invention includes detours 143a and 143b, flow rate detectors 144a and 144b, and control systems 146a and 146b.

  In the temperature control apparatus 100a having the above-described configuration, HFE is supplied to each of the plurality of units (U1 to U4) to be temperature controlled, and the temperature of the HFE is controlled by heat exchange with warm water. That is, the temperature of the HFE is controlled by controlling the flow rate of hot water entering the heat exchangers 114a to 114d. In the temperature control apparatus 100a of this example, since the heat exchangers 114a to 114d are disposed in association with each of the plurality of units (U1 to U4) to be temperature controlled, the plurality of units (U1 to U1) are arranged. The HFE controlled to the target temperature is reliably supplied to each of U4).

  As the heat exchangers 114a to 114d, a type having a wide heat transfer area, for example, a plate type heat exchanger is used. The plate heat exchanger is suitable for precisely controlling the temperature of a large amount of fluid because of its large heat transfer area. By utilizing a wide heat transfer area in the heat exchanger 114, high-precision and precise temperature control (for example, stability: ± 0.001 ° C.) becomes possible. Further, power consumption is reduced and operation costs can be reduced as compared with the case where an electric heater is used. Therefore, the temperature control apparatus 100a of this example is preferably applied to increase response and increase output.

  Moreover, in the temperature control apparatus 100a of this example, since water (warm water) is used as a heating medium fluid in a warm water system, the temperature of the heat transfer part in the heat exchangers 114a to 114d is limited to 100 ° C. or less. In the case of an electric heater, the temperature (surface temperature) of the heat transfer part may exceed 200 ° C. When this comes into contact with HFE (Novec), which is a fluorine-based liquid used in this example, it is thermally decomposed in the air. This may be avoided by reacting with water in the present example, although corrosive hydrofluoric acid (HF) may be generated. The same applies when Fluorinert (FC) or H-Galden (HFPE) is used as the fluid instead of HFE.

Here, FIGS. 2 to 4 show examples of characteristics (opening-flow characteristics) of the flow control valves 135a to 135d used in the temperature control device 100a.
As shown in FIG. 2, the flow control valves 135a and 135b used in the constant temperature system preferably have comparatively gentle characteristics with respect to the flow rate change with respect to the opening. This is because the temperature load of the unit to be temperature controlled is small, so that the flow rate is not greatly changed by a slight change in the opening degree, and the temperature stability is increased.

  On the other hand, the flow rate control valves 135c and 135d used in the active system preferably have a characteristic that the flow rate change with respect to the opening degree is relatively steep as shown in FIG. This is because the thermal load of the temperature control object changes greatly, so that the flow rate is changed greatly by a slight change in the opening degree, and the followability (responsiveness) of the temperature control is improved.

  In addition, by using the flow control valve having the characteristics shown in FIG. 4, it is possible to cope with either the above-described constant temperature system or active system. That is, in the flow rate control valve of FIG. 4, the flow rate change with respect to the opening degree varies depending on the opening range, the flow rate change with respect to the opening degree is gentle in a certain range, and is steep in another range. In this case, it is preferable to limit the use range of the constant temperature system and the active system by software or the like, and use within the range of appropriate characteristics.

  Returning to FIG. 1, in the temperature control apparatus 100a of this example, among the plurality of hot water branch paths 130a to 130d, in the active branch paths 130c and 130d, part of the hot water toward the heat exchangers 114c and 114d is obtained. The detours 143a and 143b are detoured. This is because the variation in the flow rate of hot water flowing through the heat exchangers 114c and 114d in the active system (the variation in the opening degree of the flow control valves 135c and 135d) is relatively large, and the influence is transmitted to the constant temperature system and the entire warm water system. It is for suppressing.

  That is, in the temperature control apparatus 100a of the present example, the bypass route 143a, 145b by the bypass amount control valves 145a, 145b so that the outflow amount from each branch route 130c, 130d is constant in the active branch route 130c, 130d. By controlling the amount of hot water flowing through 143b, even if the flow rate of hot water flowing through the heat exchangers 114c and 114d fluctuates relatively greatly, the fluctuation is absorbed by the detours 143a and 143b.

  For example, in each of the branch paths 130c and 130d of the active system, when the flow rate of the hot water flowing through the heat exchangers 114c and 114d increases, the flow rate (the bypass amount) of the hot water flowing through the detours 143a and 143b is decreased, On the contrary, when the flow rate of the hot water flowing through the heat exchangers 114c and 114d decreases, the detour amount is increased accordingly.

  By such control, the total flow rate of the warm water flowing through the active branch paths 130c and 130d (the amount flowing through the heat exchanger + the bypass amount) is kept constant, and as a result, the warm water flows into the active branch paths 130c and 130d. The amount is kept constant. Thereby, the balance of the inflow amount of warm water with respect to the plurality of branch paths 130a to 130d is kept constant, and the inflow amount of warm water is kept substantially constant with respect to each of the plurality of branch paths 130a to 130d. The flow rate fluctuations in the constant temperature branch paths 130a and 130b are small, and the influence of the fluctuations on the inflow amount balance is extremely small.

Thus, in the temperature control apparatus 100a of this example, since the inflow of warm water with respect to each branch path 130a-130d is kept constant, heat exchange is stably performed in each branch path 130a-130d. More precise temperature control is performed for each of the plurality of units (U1 to U4). Furthermore, there is an advantage that the entire flow of the hot water system is stabilized, the load applied to the temperature control of the hot water itself is reduced, and the temperature of the hot water is stabilized.
It should be noted that detours may be provided in the constant temperature system branch paths 130a and 130b, and the detour amount control similar to that of the active system may be performed. However, in this case, the configuration is complicated compared to FIG.

FIG. 5 shows a modification (temperature control device 100) of the temperature control device 100a shown in FIG.
In addition, about the temperature control apparatus 100 of FIG. 5, the same code | symbol is attached | subjected about the component which has the function similar to what was shown in FIG. 1, and the description is abbreviate | omitted or simplified.

  The temperature control apparatus 100 shown in FIG. 5 supplies temperature-controlled fluid (HFE) to each of a plurality of units (U1, U2, U3, U4) of the exposure apparatus main body, as in the example of FIG. The HFE system 101 includes HFE circulation paths 110a, 110b, 110c, and 110d as fluid flow paths associated with the supply destination units (U1, U2, U3, U4). Moreover, the temperature control apparatus 100 has the hot water system 103 for flowing the hot water which controls the temperature of the HFE flowing through the HFE circulation paths 110a to 110d, and the hot water system 103 circulates the hot water controlled to the target temperature. A hot water circulation path 130 which is a flow path is provided.

  Unlike the example of FIG. 1, the hot water circulation path 130 branches in two directions of the constant temperature system and the active system at the upstream position, and further downstream in each of the constant temperature system and the active system in two directions (total of four directions). It is branched to.

  Specifically, the hot water circulation path 130 includes an inlet branch pipe 155a for dividing the hot water flow path into two of a constant temperature system and an active system, and an auxiliary branch pipe 155b for further dividing the flow path into two, 155c, two isothermal branch paths 130a and 130b connected to the auxiliary branch pipe 155b, two active branch paths 130c and 130d connected to the auxiliary branch pipe 155c, and outlet junction pipes 156a and 156b, 156c. The outlet merging pipe 156a is connected to the two constant temperature system branch paths 130a and 130b, the outlet merging pipe 156b is connected to the two active system branch paths 130c and 130d, and the outlet merging pipe 156c is connected to the outlet merging pipe 156a, 156b.

  Hot water is divided into two directions of a constant temperature system and an active system at the inlet branch pipe 155a. In the constant temperature system, the hot water is further divided into two directions by the auxiliary branch pipe 155b and flows through the branch paths 130a and 130b. In the active system, the hot water is further divided into two directions by the auxiliary branch pipe 155c and flows through the branch paths 130c and 130d. Hot water flowing out from the two branch paths 130a and 130b of the constant temperature system is merged in the outlet merging pipe 156a. The hot water that has flowed out of the two active branch paths 130c and 130d is merged in the outlet merging pipe 156b. The hot water that has flowed out of the outlet merging pipes 156a and 156b is merged in the outlet merging pipe 156c.

  In the hot water circulation path 130, a detour 157 for bypassing a part of the hot water from the inlet branch pipe 155a to the active branch paths 130c and 130d, and fluctuations in the amount of hot water flowing out of the active branch paths 130c and 130d are detected. A flow rate detector 158 to be detected and a bypass amount control valve 159 for controlling the flow rate of the hot water flowing through the bypass circuit 157 based on the detection result of the flow rate detector 158 are provided. The inlet end of the detour 157 is connected to a pipe between the inlet branch pipe 155a and the auxiliary branch pipe 155c, that is, a position just before the hot water is divided into the two branch paths 130c and 130d of the active system. The outlet end of the detour 157 is connected to a position immediately after the hot water from the pipes between the outlet merging pipe 156b and the outlet merging pipe 156c, that is, the two branch paths 130c and 130d of the active system merge.

The arrangement position of the flow rate detector 158 is a position downstream of the outlet end of the bypass 157, that is, a position immediately after the hot water from the two branch paths 130c and 130d of the active system and the hot water from the bypass 157 merge. . The detection result of the flow rate detector 158 is sent to the control system 160. The control system 160 controls the opening degree of the bypass amount control valve 159 based on the detection result of the flow rate detector 158 so that the amount of hot water flowing out from the active system becomes constant.
The flow rate stabilizing means in the present invention includes an inlet branch pipe 155a, auxiliary branch pipes 155b and 155c, outlet merging pipes 156a, 156b and 156c, a detour circuit 157, a flow rate detector 158, a detour amount control valve 159, and the like.

  In the temperature control apparatus 100 of this example, the influence of fluctuations in the flow rate of hot water flowing through the heat exchangers 114c and 114d in the active system (changes in the opening degree of the flow control valves 135c and 135d) is transmitted to the constant temperature system and the entire hot water system. In order to suppress this, a part of the hot water toward the active heat exchangers 114 c and 114 d is diverted to the detour 157.

  That is, in the temperature control device 100 of this example, the amount of hot water flowing through the bypass circuit 157 is controlled by the bypass amount control valve 159 so that the outflow amount of warm water from the active system is constant, and thereby the heat exchanger Even if the flow rate of the hot water flowing through 114c and 114d fluctuates relatively large, the fluctuation is absorbed by the detour 157. For example, when the flow rate of the hot water flowing through the heat exchangers 114c and 114d increases, the flow rate of the warm water flowing through the detour 157 (the detour amount) is reduced by the increase, and conversely, the hot water flowing through the heat exchangers 114c and 114d When the flow rate decreases, the detour amount is increased accordingly.

  As a result, the total flow rate of the hot water flowing through the active system (the amount flowing through the heat exchanger + the bypass amount) is kept constant, and as a result, the inflow amount of hot water into the constant temperature system and the active system is kept constant. That is, in the inlet branch pipe 155a, the amount of hot water toward the constant temperature system (branch paths 130a and 130b) and the amount of hot water toward the active system (branch paths 130c and 130d) are kept constant. The flow rate fluctuations in the constant temperature branch paths 130a and 130b are small, and the influence of the fluctuations on the inflow amount balance is extremely small.

  Thus, in the temperature control apparatus 100 of this example, since the inflow of warm water is kept constant with respect to the constant temperature system and the active system, the heat exchange is stable in each system as in the example of FIG. Thus, precise temperature control is performed on each of the plurality of units (U1 to U4). Furthermore, there is an advantage that the entire flow of the hot water system 103 is stabilized, the load applied to the temperature control of the hot water itself is reduced, and the temperature of the hot water is stabilized.

  Further, unlike the example of FIG. 1, the temperature control device 100 of this example performs bypass control collectively through one bypass route 157 for the two branch paths 130 c included in the active system. Simplification of control is achieved.

FIG. 6 is a diagram showing a configuration of a leak detection system 170 that detects leaks of the flow control valves 135a to 135d used in the temperature control apparatus of FIG. 1 or FIG.
In FIG. 6, the plurality of flow control valves 135 a to 135 d are accommodated together in a box 171. The leakage detection system 170 includes a first leakage detection system 170a that detects a relatively small amount of leakage from each of the flow control valves 135a to 135d, and a relatively large amount of leakage from each of the flow control valves 135a to 135d. And a second leakage detection system 170b for detection.

  Here, each of the flow control valves 135a to 135d uses a resin member as a seal member for the drive shaft. When wear of the sealing member proceeds, such as when the temperature control device is continuously operated, a small amount of liquid leakage (leakage) is generated from the drain ports 172a to 172d. A small amount of leaked liquid passes through drain drain pipes 173a to 173d and is discharged from the drain outlet 174 at the lower part (bottom part) of the box 171.

  The first liquid leakage detection system 170a detects the above-described minute leakage, and a plurality of detections as liquid leakage sensors individually associated with the liquid leakage detector 176 and the flow control valves 135a to 135d. Wirings 177a to 177d and relays 178a to 178d for switching the detection target of liquid leakage detector 176 to any of detection wirings 177a to 177d are included.

  The detection target of the leak detector 176 is switched to any one of the flow control valves 135a to 135d via the relays 178a to 178d at regular time intervals. Therefore, the first liquid leakage detection system 170a can be simplified in configuration as compared with a configuration in which a liquid leakage detector is individually provided for each of the four flow control valves 135a to 135d. When a small amount of leak is detected by the liquid leak detector 176, the result is notified by a not-shown alarm (display panel or the like), and the operation of the apparatus (temperature control apparatus, exposure apparatus main body) is continued. . Based on the notification, the operator performs maintenance or replacement of the flow control valves 135a to 135d at the next maintenance.

  On the other hand, the second liquid leakage detection system 170b detects a large amount of liquid leakage from the flow rate control valves 135a to 135d and the piping in the box 171, and has a predetermined height from the liquid leakage detector 180 and the bottom of the box 171. And a detection wiring 181 as a liquid leakage sensor arranged at the position.

  In the second liquid leakage detection system 170b, when a large amount of liquid leakage occurs and the liquid reaches a predetermined height at the bottom of the box 171, the liquid leakage detector 180 detects the liquid leakage via the detection wiring 181. . When a large amount of liquid leakage is detected by the liquid leakage detector 180, the result is notified by a not-shown alarm (display panel, alarm, etc.) and the apparatus (temperature control apparatus, exposure apparatus main body) is stopped. Is done. Based on the notification, the worker promptly performs maintenance and replacement of the flow control valves 135a to 135d and maintenance and replacement of the pipes associated therewith.

  As described above, the leak detection system 170 of the present example separately detects a small amount of leak and a large amount of leak, thereby suppressing the stop time of the apparatus and increasing the efficiency of the maintenance work. . Further, by suppressing the stop time of the apparatus, the temperature change of the medium fluid accompanying the stop of the apparatus is suppressed, and the control stability of the temperature control is improved.

7 and 8 show a partial modification of the temperature control apparatus 100 shown in FIG.
In the example of FIG. 7, pressure gauges 158 a and 158 b that measure the pressure of the fluid are used as detectors for detecting the flow rate variation of hot water for bypass control instead of the flow rate detector 158 in the example of FIG. 5. Yes. The pressure gauge 158 a is disposed upstream of the inlet end of the bypass route 157, and the pressure gauge 158 b is disposed downstream of the outlet end of the bypass route 157. The measurement results of the pressure gauges 158a and 158b are sent to the control system 160a. The control system 160a obtains the differential pressure between the upstream position and the downstream position in the active system based on the measurement result, and controls the opening degree of the bypass control valve 159 so that the value becomes constant. Generally, a pressure gauge has a higher resolution than a flow rate detector. Therefore, by using a pressure gauge, more precise flow rate control (bypassing amount control) becomes possible.

  In the example of FIG. 8, the flow rate detector 158 in the example of FIG. 5 is provided at the inlet of the constant temperature system. Specifically, the flow detector 158 is disposed between the inlet branch pipe 155a and the constant temperature auxiliary branch pipe 155b, that is, immediately after the hot water is divided into two directions by the inlet branch pipe 155a. Position. The detection result of the flow rate detector 158 is sent to the control system 160. The control system 160 controls the opening degree of the bypass amount control valve 159 based on the detection result of the flow rate detector 158 so that the amount of hot water flowing out from the active system becomes constant. In this example, by detecting the flow rate fluctuation at the inlet of the constant temperature system, it becomes possible to more reliably keep the amount of warm water flowing into the constant temperature system where high-precision temperature stability is required. The arrangement position of the flow rate detector 158 is not limited to the above position, and may be another position.

FIG. 9 shows an overall configuration of the temperature control device 100 to which the feature example shown in FIG. 5 is applied.
In the temperature control device 100 of FIG. 9, components having the same functions as those shown in FIG. 5 are denoted by the same reference numerals, and description thereof is omitted or simplified.

  In FIG. 9, an exposure apparatus EXP to which the temperature control apparatus 100 is applied has an exposure apparatus main body 10 disposed in a clean room and a chamber CH that accommodates the exposure apparatus main body 10. The exposure apparatus main body 10 includes units (U1, U2) having a strict target temperature stability although the fluctuation of the thermal load is relatively small, and units (U3, U4) having a relatively large fluctuation of the thermal load. Yes.

  The temperature control apparatus 100 includes an HFE system 101 through which a temperature control fluid (hydrofluoroether: HFE, Novec) supplied to the exposure apparatus main body 10 flows, and a refrigerant fluid for cooling the fluid (HFE) through the HFE system 101. A cold water system 102 in which (cold water) flows and a hot water system 103 in which a hot medium fluid (hot water) for heating the fluid (HFE) flowing in the HFE system 101 flows are configured.

(HFE system)
The HFE system 101 includes constant-temperature HFE circulation paths 110a and 110b and active HFE circulation paths 110c and 110d. A constant temperature system HFE circulation path 110a, 110b is provided with a tank 111a, a pump 112a, a heat exchanger 113a for exchanging heat with the cold water system 102, and the like. Similarly, the active HFE circulation paths 110c and 110d are provided with a tank 111c, a pump 112c, a heat exchanger 113c for exchanging heat with the cold water system 102, and the like. The capacities of the tanks 111a and 111c, the capacities of the pumps 112a and 112c, and the capacities of the heat exchangers 113a and 113c are determined based on the amount of heat generated by the corresponding system (constant temperature system, active system), the amount of variation thereof, and the like. Yes.

  Further, in each HFE circulation path 110a, 110b, 110c, 110d, heat exchangers 114a, 114b, 114c, 114d for performing heat exchange with the hot water system 103, temperature sensors 115a, 115b, 115c, 115d, etc. Is arranged. The capacities of the heat exchangers 114a, 114b, 114c, and 114d are determined based on the fluctuation amount of the heat load of the corresponding unit, the heat generation amount, and the like. The temperature of the HFE in each of the circulation paths 110a to 110d is detected by the temperature sensors 115a to 115d, and the detection result is sent to the control systems 116a and 116b.

  The HFE flowing through the HFE circulation path 110a is once cooled by the heat exchanger 113a, heated to the target temperature by the heat exchanger 114a, and supplied to the first unit (U1). The HFE flowing through the HFE circulation path 110b is once cooled by the heat exchanger 113a, heated to the target temperature by the heat exchanger 114b, and supplied to the second unit (U2). The HFE exiting the first unit (U1) and the HFE exiting the second unit (U2) return to the tank 111a.

  Similarly, HFE flowing through the HFE circulation path 110c is once cooled by the heat exchanger 113c, heated to the target temperature by the heat exchanger 114c, and supplied to the third unit (U3). The HFE flowing through the HFE circulation path 110d is once cooled by the heat exchanger 113d, heated to the target temperature by the heat exchanger 114d, and supplied to the fourth unit (U4). The HFE leaving the third unit (U3) and the HFE leaving the fourth unit (U4) return to the tank 111c.

  More specifically, in the HFE system 101, the HFE in the tanks 111a and 111c is pumped by the pumps 112a and 112c. The tanks 111a and 111c temporarily store HFE for the purpose of stabilizing the HFE temperature in the HFE circulation paths 110a to 110d, and are arranged upstream of the pumps 112a and 112c. The HFE pumped by the pumps 112a and 112c is cooled to a target temperature (for example, 23 ° C.) or lower in the heat exchangers 113a and 113c, and then heated in the heat exchangers 114a to 114d, whereby the HFE is heated to the target temperature ( For example, it is controlled at 23 ° C.).

  In the HFE system 101 of this example, the HFE circulation paths 110a to 110d are independent from each other between the constant temperature system and the active system, and even if the temperature fluctuation of the HFE flowing through the active system is large, the influence is changed to the constant temperature system. Is hardly transmitted. As a result, it is possible to stabilize the temperature control accuracy in the constant temperature system and flexibly cope with fluctuations in the amount of heat generated in the active system.

  In controlling the temperature of the HFE, the HFE is once cooled and then heated. The HFE refluxed from each unit (U1 to U4) of the exposure apparatus main body 10 is expected to be heated by the heat generated by each unit. Therefore, in this case, it is possible to reduce the amount of operation by controlling the fluid temperature while reheating after cooling and removing the rough heat, so that the controllability is high. Conversely, when it is expected that the HFE returning from each unit of the exposure apparatus main body 10 will be cooled, it is better to control the fluid temperature while cooling it once heated.

(Cold water system)
The cold water system 102 includes a refrigerator 120 and a cold water circulation path 121 that is a flow path through which cold water controlled to a target temperature circulates.

  The refrigerator 120 includes a cold water condenser (condenser) 122, a heat exchanger (evaporator) 124, a compressor 125, and the like, and heat is generated from a low-temperature object by a cycle including evaporation, compression, condensation, and expansion processes. Pumps up and heats hot objects.

That is, in the refrigerator 120, the refrigerant vapor is compressed by the compressor 125 to be in a high temperature and high pressure state. The high-temperature and high-pressure refrigerant vapor remains at high pressure, passes through the heat exchanger 136, and then dissipates heat in the cold water condenser 122 to condense. The liquefied refrigerant is decompressed by an expansion valve (not shown) and becomes wet steam. The wet steam absorbs heat in the heat exchanger 124 and evaporates to become saturated steam and is sucked into the compressor 125. The cold water condenser 122 is provided with a cooling pipe 122a through which the factory cooling water flows, and heat released from the refrigerant is recovered as needed by the factory cooling water flowing through the refrigerant pipe 122a.
Examples of the refrigerant used in the refrigerator 120 include CFCs such as R410A, R407C, and R134a, ammonia, isobutane, carbon dioxide, and the like.

  In addition to the heat exchangers 113a and 113c and the heat exchanger 124, a tank 126, a pump 127, and the like are disposed in the cold water circulation path 121. The cold water circulation path 121 is branched into a constant temperature system (path 121a) and an active system (path 121c), and the heat exchangers 113a and 113c are arranged in the paths 121a and 121c.

  In the cold water circulation path 121, cold water in the tank 126 is pumped by the pump 127. The tank 126 temporarily stores cold water for the purpose of stabilizing the temperature of the cold water in the cold water circulation path 121, and is arranged upstream of the pump 127. The cold water pumped by the pump 127 is cooled by heat exchange with the refrigerant of the refrigerator 120 in the heat exchanger 124. The cold water cooled by the heat exchanger 124 exchanges heat with the HFE flowing through the HFE system 101 in the heat exchangers 113a and 113c. By this heat exchange, the temperature of the HFE flowing through the HFE system 101 decreases, and the temperature of the cold water flowing through the cold water circulation path 121 (paths 121a and 121c) increases.

(Hot water system)
The hot water system 103 has a hot water circulation path 130 that is a flow path for circulating hot water controlled to a target temperature. The hot water circulation path 130 includes a tank 131, a pump 133, flow control valves 134, 135a to 135d, Heat exchangers 114a to 114d, 136, detours 137, 157, a temperature sensor 139, and the like are disposed.

  As described above, the hot water circulation path 130 branches into four paths (130a, 130b, 130c, and 130d) in association with the supply destination units (U1 to U4). That is, the hot water circulation path 130 is branched in two directions of the constant temperature system and the active system in the inlet branch pipe 155a, and further in two directions in each of the constant temperature system and the active system in the auxiliary branch pipes 155b and 155c downstream thereof ( Branches in a total of 4 directions). The two constant temperature system branch paths 130a and 130b are connected at their outlets via an outlet merging pipe 156a, and the two active system branch paths 130c and 130d are connected at their outlets via an outlet merging pipe 156b, Further, these pipes are connected via an outlet merging pipe 156c. Further, the heat exchangers 114a, 114b, 114c, 114d and the flow control valves 135a, 135b, 135c, 135d are disposed in the respective branch paths 130a, 130b, 130c, 130d. Based on the detection results of the temperature sensors 115a, 115b, 115c, and 115d, the HFE entering each unit is matched based on the instructions of the control systems 116a and 116b so that the target temperature (for example, 23 ° C.) is reached. The opening degree of the flow control valves 135a, 135b, 135c, 135d is controlled.

  In the hot water system 103, the hot water in the tank 131 is pumped by the pump 133. The tank 131 temporarily stores hot water for the purpose of stabilizing the temperature of the hot water in the hot water circulation path 130, and is disposed upstream of the pump 133. The hot water pumped by the pump 133 is heated in the heat exchanger 136. In this example, the exhaust heat of the refrigerator 120 in the cold water system 102 is used as a heat source of the hot water flowing through the hot water system 103. That is, in the refrigerator 120, the heat exchanger 136 is disposed between the compressor 125 and the cold water condenser 122, and the heat of the refrigerant compressed to high temperature and high pressure by the compressor 125 passes through the heat exchanger 136. It is transmitted to the hot water of the hot water system 103.

  At the downstream position of the heat exchanger 136, the hot water heated by the heat exchanger 136 and the hot water that bypasses the heat exchanger 136 through the bypass 137 merge. The temperature of the warm water toward the heat exchangers 114a to 114d is determined by the mixing ratio of the warm water, and this warm water temperature is detected by the temperature sensor 139, and the detection result is sent to the control system 141. The flow control valve 134 controls the flow rate of the hot water entering the heat exchanger 136, and is downstream of the connection portion (branch portion) with the bypass 137 in the flow path between the pump 133 and the heat exchanger 136. It is arranged. Based on the detection result of the temperature sensor 139, the control system 141 controls the opening degree of the flow control valve 134 so that the temperature of the hot water discharged from the heat exchanger 136 becomes the target temperature. By controlling the opening degree of the flow rate control valve 134, the ratio between the flow rate of the hot water passing through the heat exchanger 136 and the flow rate of the detoured hot water, that is, the mixing ratio of the hot water toward the heat exchangers 114a to 114d is determined. In addition, the target temperature of warm water is a temperature (for example, 28 degreeC) 5 degreeC higher than the target temperature (for example, 23 degreeC) of the HFE system 101, for example.

  The hot water adjusted to the target temperature exchanges heat with the HFE flowing through the circulation paths 110a to 110d of the HFE system 101 in the heat exchangers 114a to 114d. By this heat exchange, the temperature of the HFE flowing through the circulation paths 110a to 110d increases, and the temperature of the hot water flowing through the hot water circulation path 130 decreases. Based on the detection results of the temperature sensors 115a to 115d, the control system 116 controls the flow rate control valves 135a to 135 so that the HFE entering each unit (U1 to U4) of the exposure apparatus body 10 becomes the target temperature (for example, 23 ° C.). The opening degree of 135d is controlled.

  In the hot water system 103 of this example, as described above, in the hot water circulation path 130, the detour 157 that bypasses a part of the hot water toward the active branch paths 130c and 130d, and the active branch paths 130c and 130d A flow rate detector 158 that detects fluctuations in the flow rate of hot water and a bypass amount control valve 159 that controls the flow rate of hot water flowing through the bypass route 157 based on the detection result of the flow rate detector 158 are provided. The detection result of the flow rate detector 158 is sent to the control system 160. The control system 160 controls the opening degree of the bypass amount control valve 159 based on the detection result of the flow rate detector 158 so that the amount of hot water flowing out from the active system becomes constant. And even if the flow rate of the warm water flowing through the heat exchangers 114c and 114d fluctuates relatively greatly, the fluctuation is absorbed by the detour 157 by this detour control. Therefore, the inflow of warm water to the constant temperature system and the active system is kept constant, and heat exchange is performed stably in each of the heat exchangers 114a to 114d. Furthermore, the entire flow of the hot water system 103 is stabilized, the load applied to the temperature control of the hot water itself is reduced, and the temperature stability of the hot water is improved in the entire hot water system 103.

  Further, in the hot water system 103, the hot water is heated using the exhaust heat utilization of the cold water system 102, that is, the exhaust heat generated in the refrigerator 120, so that the heat utilization efficiency can be improved. That is, the exhaust heat of the refrigerator 120 is normally recovered by factory cooling water, and by using the exhaust heat, it is possible to reduce energy consumption and to reduce the operation cost. In the hot water system 103, the temperature of the hot water discharged from the heat exchanger 136 is, for example, 60 to 80 ° C. It is also possible to sterilize bacteria contained in the pipe or in the hot water using the heat of the hot water.

FIG. 10 shows a partial modification of the temperature control device 100 of FIG.
In the example of FIG. 10, a bypass 191 is provided in the refrigerant pipe 190 connected to the heat exchanger 136 of the hot water system 103, and a flow control valve 192 (this example is a manual type, fixed valve) is provided in the bypass. 9 is different from FIG.
Here, the heat exchanger 136 is for heat exchange between the hot water and the heat source in the hot water system 103 as described above. Since the heat source of the hot water system 103 uses the exhaust heat of the refrigerator 120, the amount of heat may be easily changed. When the heat quantity fluctuation on the refrigerator 120 side is large, the flow rate control valve 134 that controls the flow rate of the hot water flowing into the heat exchanger 136 (the heat exchange flow rate on the hot water side) can deviate from the well-controllable opening range. There is sex.

  Therefore, as shown in FIG. 10, the flow rate of the refrigerant (exhaust heat gas) flowing into the heat exchanger 136 is appropriately adjusted by the flow rate control valve 192 provided in the bypass 191. That is, the opening degree of the flow control valve 192 is adjusted so that the amount of heat on the refrigerator 120 side supplied to the heat exchanger 136 falls within a desired range. Thereby, in this example, it becomes possible to always use the flow control valve 134 on the warm water side in a portion having good control characteristics, and it is possible to further stabilize the temperature of the warm water. As a modification of FIG. 10, a flow control three-way valve may be provided at the branch portion of the bypass 191 instead of the flow control valve 192 provided in the bypass 191 shown in FIG. 10.

  In the example of FIG. 9, the flow control valves 134 and 135a to 135d may be disposed upstream or downstream of the heat exchangers 114a to 114d and 136. In addition, since the hot water which comes out from the heat exchanger 136 is high temperature, there exists an advantage that the fall of the lifetime of the flow control valve 134 by heat | fever can be prevented by arrange | positioning the flow control valve 134 in front.

  Further, as the heat exchangers 113a, 113c, 114a to 114d, 124, 136, a type having a large heat transfer area, for example, a plate type heat exchanger is used. The plate heat exchanger is suitable for precisely controlling the temperature of a large amount of fluid because of its large heat transfer area.

  In the example of FIG. 9, among the components of the temperature control apparatus 100 described above, the HFE system 101 and a part of the cold water system 102 and the hot water system 103 (HFE circulation path 110, tanks 111a and 111c, pumps 112a and 112c). , Heat exchangers 113a, 113c, 114a to 114d, temperature sensors 115a to 115d, flow rate control valves 135a to 135d, detour 157, and the like) are arranged in substantially the same environment as the exposure apparatus EXP (hereinafter, this portion is referred to as the secondary). The temperature control system 150) and other components (for example, the remaining part of the cold water system 102 and the remaining part of the hot water system 103) are placed under the floor of the clean room or adjacent to the clean room. (This portion is hereinafter referred to as a primary temperature control system 151). The primary temperature control system 151 is arranged in an environment different from that of the clean room for the purpose of reducing the area that requires strict management in the clean room and reducing the management cost of the clean room.

FIG. 11 shows a specific configuration example of the exposure apparatus main body 10.
The exposure apparatus body 10 uses a laser light source that emits ArF excimer laser light (λ = 193 nm) as the exposure light source 11, and an illumination system 21 for illuminating the reticle R arranged in the optical path of the exposure light EL. , A reticle stage RST on which the reticle R is mounted, a projection optical system PL for projecting the exposure light EL emitted from the reticle R onto the wafer W, a wafer stage WST on which the wafer W is mounted, and the overall apparatus And a control device (not shown).

  The exposure light EL from the exposure light source 11 is introduced into the illumination system 21 via a beam matching unit (hereinafter referred to as “BMU”) 12. The BMU 12 is composed of a plurality of optical elements, and optically connects the exposure light source 11 and the illumination system 21. The exposure light source 11 is disposed in a utility room or the like disposed under the floor of the clean room or adjacent to the clean room.

  The illumination system 21 includes optical elements such as a fly-eye lens (which may be a rod integrator) 26, a mirror 27, and a condenser lens 28 that form an optical integrator. Exposure light EL from an exposure light source (not shown) is introduced into the illumination system 21 via the BMU 12. The fly-eye lens 26 forms a large number of secondary light sources that illuminate the reticle R with a uniform illuminance distribution on the rear surface thereof when the exposure light EL is incident from the exposure light source. Behind the fly-eye lens 26, a reticle blind 29 for shaping the shape of the exposure light EL is disposed.

  Plate-shaped parallel flat glass (not shown) is disposed at the entrance and exit of the exposure light EL in the illumination system 21. The parallel flat glass is formed of a material (synthetic quartz, fluorite, etc.) that transmits the exposure light EL.

  The projection optical system PL includes a pair of cover glasses (not shown) provided at the entrance and exit of the exposure light EL, and a plurality of lenses (only two shown in FIG. 11) provided between the pair of cover glasses. An element 31 is included. Further, the projection optical system PL is a wafer in which a projection image obtained by reducing the circuit pattern on the reticle R to, for example, 1/5 or 1/4 is coated on the surface with a photoresist that is sensitive to the exposure light EL. Form on W.

  Reticle stage RST holds reticle R on which a predetermined pattern is formed so as to be movable within a plane orthogonal to the optical axis of exposure light EL. A movable mirror (not shown) that reflects the laser beam from the reticle-side interferometer 33 is fixed to the end of the reticle stage RST. The reticle stage RST is scanned at a predetermined position in the scanning direction by the reticle-side interferometer 33, and is subjected to predetermined scanning under the control of a control device (not shown) that controls the overall operation of the exposure apparatus body 10. It is driven in the direction.

  Wafer stage WST can move wafer W coated with a photoresist having photosensitivity to exposure light EL in a plane perpendicular to the optical axis of exposure light EL, and can move finely along the optical axis. It is held and accommodated inside the wafer chamber 40.

  A movable mirror (not shown) that reflects the laser beam from wafer interferometer 34 is fixed to the end of wafer stage WST, and the position on the plane on which wafer stage WST is movable is on the wafer side. It is always detected by the interferometer 34. Wafer stage WST is configured to be movable not only in the scanning direction but also in a direction perpendicular to the scanning direction under the control of the control device. Thereby, a step-and-scan operation that repeats scanning exposure for each shot area on the wafer W is possible.

  Here, the wafer chamber 40 is partitioned and formed inside the main body column 36 as a support, and blocks the space between the projection optical system PL and the wafer W from the external atmosphere. Inside the wafer chamber 40, in addition to the wafer stage WST, an oblique focus type autofocus sensor 24 for detecting the Z-direction position (focus position) and tilt angle of the surface of the wafer W, an off-axis A type alignment sensor 25 and the like are accommodated. The main body column 36 is supported on a base plate 37 via a plurality of anti-vibration bases 38 and holds a reticle stage RST, projection optical system PL, wafer stage WST, etc., which are constituent elements of the exposure apparatus main body 10, respectively. Yes.

  In the exposure apparatus body 10 configured as described above, when the circuit pattern is scanned and exposed on the shot area on the wafer W by the step-and-scan method, the illumination area on the reticle R is rectangular by the reticle blind 29. Shaped into a (slit) shape. This illumination area has a longitudinal direction in a direction orthogonal to the scanning direction on the reticle R side. Then, by scanning the reticle R at a predetermined speed Vr during exposure, the circuit pattern on the reticle R is sequentially illuminated from one end side to the other end side in the slit-like illumination region. Thereby, the circuit pattern on the reticle R in the illumination area is projected onto the wafer W through the projection optical system PL, thereby forming a projection area.

  At this time, since the wafer W is in an inverted imaging relationship with the reticle R, the wafer W is scanned in a direction opposite to the scanning direction of the reticle R at a predetermined speed Vw in synchronization with the scanning of the reticle R. As a result, the entire shot area of the wafer W can be exposed. The scanning speed ratio Vw / Vr corresponds to the reduction magnification of the projection optical system, and the circuit pattern on the reticle R is accurately reduced and transferred onto each shot area on the wafer W.

  Here, the ArF laser light used in the exposure apparatus body 10 is easily absorbed by oxygen / organic compounds contained in the air. Therefore, in the exposure apparatus body 10, the illumination optical path (the optical path leading to the exposure light source 11 to the reticle R) and the projection optical path (the optical path leading to the reticle R to the wafer W) are blocked from the external atmosphere, and these optical paths are protected from ArF laser light. And filled with a gas with low absorption characteristics.

  Specifically, the optical paths in the BMU 12, the illumination system 21, and the projection optical system PL are blocked from the external environment by the casings 41, 42, and 43. A supply pipe 45 and a discharge pipe 46 are connected to each casing 41, 42, 43, and an inert gas that is an optically inert purge gas is supplied from a tank 47 in a utility plant of a microdevice factory. It has come to be. Further, the gas inside each casing 41, 42, 43 is discharged to the outside of the factory via the discharge pipe 46.

  The inert gas is a single gas selected from nitrogen, helium, neon, argon, krypton, xenon, radon, or the like, or a mixed gas thereof, and is chemically purified. The supply of the purge gas is performed in each casing 41, 42, 43 to reduce the concentration of impurities such as organic compounds that contaminate various optical elements and oxygen that absorbs energy. Moisture and organic compounds are substances that deposit on the surface of various optical elements under irradiation of exposure light EL to cause a clouding phenomenon, and oxygen is a light-absorbing substance that absorbs an ArF excimer laser. Examples of organic compounds include organosilicon compounds, ammonium salts, sulfates, volatilized substances from resists on the wafer W, volatilized substances from slidability improvers used for components having various driving units, and electricity. There are volatilized substances from the coating layer of the wiring for supplying power or signals to the components.

  The purge gas may also contain organic compounds or oxygen as impurities. Therefore, a purge gas filter 48 for removing impurities in the purge gas and a temperature control dryer 49 for adjusting the purge gas to a predetermined temperature and removing moisture in the purge gas are provided in the supply pipe 45. Yes.

  Here, in the exposure apparatus body 10 described above, examples of a temperature-controlled fluid (HFE) supply destination unit (temperature adjustment target unit) include a projection optical system PL (projection lens), a heat sink, and a wafer stage WST (X Stage, Y stage). These HFE supply destination units are merely examples, and units that require temperature management in the exposure apparatus main body 10 are appropriately selected as necessary.

  When the sensors such as the projection optical system PL and the alignment sensor 25 are affected by heat from an electrical component or a light beam, the optical element may be thermally deformed to deteriorate its performance. It is adjusted. The heat sink is provided as a temperature control heat dissipation means. In addition, although the projection optical system PL and sensors have relatively small fluctuations in heat load (heat generation amount), the target temperature stability is severe. Therefore, it is desirable to control the temperature by the “constant temperature system” in the temperature control apparatus 100 of FIG.

  On the other hand, the X stage and the Y stage in wafer stage WST are heated for the purpose of recovering the heat and the like because the driving actuator easily generates heat. Note that if the heat of the actuator is transmitted to the air near the stage WST, the measurement accuracy of the interferometer 34 may be affected by air fluctuation or the like. The thermal load (heat generation amount) of the X stage and Y stage actuators varies greatly depending on the driving state. Therefore, these are preferably temperature-controlled by the “active system” in the temperature control device 100 of FIG.

  The configuration examples of the temperature control apparatus and the exposure apparatus of the present invention have been described above. However, the projection optical system in the exposure apparatus main body is not limited to the refraction type, and may be a catadioptric type or a reflection type. Further, as an exposure apparatus, a contact exposure apparatus that exposes the mask pattern by bringing the mask and the substrate into close contact without using a projection optical system, or a proximity exposure that exposes the mask pattern by bringing the mask and the substrate close to each other. The present invention can be similarly applied to an apparatus.

  The present invention can also be applied to an exposure apparatus using a liquid immersion method disclosed in International Publication No. 99/49504. In the immersion method, the space between the lower surface of the projection optical system and the substrate surface (wafer or the like) is filled with a liquid such as water (pure water) or an organic solvent, and the wavelength of exposure light in the liquid is 1 / The resolution is improved by using n (n is a refractive index of the liquid, usually about 1.2 to 1.6), and the depth of focus is expanded about n times. In this case, for example, the temperature of the liquid supplied between the lower surface of the projection optical system and the wafer may be controlled using the temperature control device of the present invention. Specifically, the second heat exchanger according to the present invention is disposed upstream of a supply nozzle for supplying a liquid between the lower surface of the projection optical system and the wafer. As a result, the liquid supplied between the lower surface of the projection optical system and the wafer can be precisely controlled with high response and high output.

Further, the exposure apparatus is not limited to the reduced exposure type, and may be, for example, the same size exposure type or the enlarged exposure type.
In addition to a micro device such as a semiconductor element, a reticle or mask used for manufacturing a reticle or mask used in an optical exposure apparatus, an EUV exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, etc. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern from a mother reticle to a glass substrate, a silicon wafer, or the like for manufacturing. Here, in an exposure apparatus using DUV light (deep ultraviolet light), VUV light (vacuum ultraviolet light) or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, or fluorite is used. , Magnesium fluoride, or quartz is used. In proximity-type X-ray exposure apparatuses and electron beam exposure apparatuses, a transmission type mask (stencil mask, member mask) is used, and a silicon wafer or the like is used as a mask substrate.

  Further, the present invention can be similarly applied not only to an exposure apparatus used for manufacturing a semiconductor element but also to the following exposure apparatus. For example, the present invention can be applied to an exposure apparatus that is used for manufacturing a display including a liquid crystal display element (LCD) or the like and transfers a device pattern onto a glass plate. The present invention can also be applied to an exposure apparatus that is used for manufacturing a thin film magnetic head or the like and transfers a device pattern to a ceramic wafer or the like. The present invention can also be applied to an exposure apparatus used for manufacturing an image sensor such as a CCD.

  The present invention can also be applied to a step-and-repeat batch exposure apparatus that transfers a mask pattern onto a substrate while the mask and the substrate are stationary, and sequentially moves the substrate stepwise.

  As a light source of the exposure apparatus, for example, g-line (λ = 436 nm), i-line (λ = 365 nm), ArF excimer laser (λ = 193 nm), F 2 laser (λ = 157 nm), Kr 2 laser (λ = 146 nm) Ar 2 laser (λ = 126 nm) or the like may be used. In addition, an infrared or visible single wavelength laser oscillated from a DFB semiconductor laser or fiber laser is amplified by, for example, a fiber amplifier doped with erbium (or both erbium and ytterbium), and a nonlinear optical crystal is used. You may use the harmonic which converted the wavelength into ultraviolet light.

In addition, the exposure apparatus 10 mentioned above is manufactured as follows, for example.
First, a plurality of lens elements 31 and a cover glass that constitute the projection optical system PL are accommodated in a lens barrel (casing 43) of the projection optical system PL. The illumination system 21 including optical members such as the mirror 27 and the lenses 26 and 28 is housed in the casing 42. Then, the illumination system 21 and the projection optical system PL are incorporated in the main body chamber 101 to perform optical adjustment. Next, a wafer stage WST (including a reticle stage RST in the case of a scan type exposure apparatus) made up of a large number of mechanical parts is attached to the main body chamber CH and connected to wiring. Then, the supply pipe 45 and the discharge pipe 46 are connected to the casing 41 of the BMU 12, the casing 42 of the illumination system 21, and the casing 43 of the projection optical system PL, and the temperature control device 100 is connected to each unit. Perform general adjustment (electrical adjustment, operation check, etc.).

  Further, the parts constituting the casings 41, 42, and 43 are assembled after removing impurities such as processing oil and metal substances by ultrasonic cleaning or the like. The exposure apparatus 10 is preferably manufactured in a clean room in which the temperature, humidity, and pressure are controlled and the cleanness is adjusted.

Next, an embodiment of a device manufacturing method using the above-described exposure apparatus in a lithography process will be described.
FIG. 12 is a flowchart illustrating a manufacturing example of a device (a semiconductor element such as an IC or LSI, a liquid crystal display element, an imaging element (CCD or the like), a thin film magnetic head, a micromachine, or the like).

  As shown in FIG. 12, first, in step S101 (design step), function / performance design (for example, circuit design of a semiconductor device) of a device (microdevice) is performed, and pattern design for realizing the function is performed. Do. Subsequently, in step S102 (mask manufacturing step), a mask (reticle R or the like) on which the designed circuit pattern is formed is manufactured. On the other hand, in step S103 (substrate manufacturing step), a substrate (wafer W when silicon material is used) is manufactured using a material such as silicon or glass plate.

  Next, in step S104 (substrate processing step), using the mask and substrate prepared in steps S101 to S103, an actual circuit or the like is formed on the substrate by a lithography technique or the like, as will be described later. Next, in step S105 (device assembly step), device assembly is performed using the substrate processed in step S104. Step S105 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation or the like) as necessary.

  Finally, in step S106 (inspection step), inspections such as an operation confirmation test and a durability test of the device manufactured in step S105 are performed. After these steps, the device is completed and shipped.

  FIG. 13 is a diagram showing an example of a detailed flow of step S104 of FIG. 13 in the case of a semiconductor device. In FIG. 13, in step S111 (oxidation step), the surface of the wafer is oxidized. In step S112 (CVD step), an insulating film is formed on the wafer surface. In step S113 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step S114 (ion implantation step), ions are implanted into the wafer. Each of the above steps S111 to S114 constitutes a pretreatment process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.

  At each stage of the wafer process, when the above pre-process is completed, the post-process is executed as follows. In this post-processing process, first, in step S115 (resist formation step), a photosensitive agent is applied to the wafer. In step S116 (exposure step), the circuit pattern of the mask (reticle) is transferred onto the wafer by the lithography system (exposure apparatus) described above. Next, in step S117 (developing step), the exposed wafer is developed, and in step 118 (etching step), exposed members other than the portions where the resist remains are removed by etching. In step S119 (resist removal step), the resist that has become unnecessary after the etching is removed.

By repeatedly performing these pre-processing steps and post-processing steps, multiple circuit patterns are formed on the wafer.
If the device manufacturing apparatus of this embodiment described above is used, in the exposure step (step S116), the resolution can be improved by the exposure light, and the exposure amount can be controlled with high accuracy. Therefore, the exposure accuracy can be improved, and for example, a highly integrated device having a minimum line width of about 0.1 μm can be manufactured with a high yield.

  As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the examples. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the technical idea described in the claims. It is understood that it belongs to.

It is a figure which shows typically one form example of the characteristic part in the temperature control apparatus which concerns on this invention. It is a figure which shows an example of the characteristic (opening-flow characteristic) of the flow control valve used with a temperature control apparatus. It is a figure which shows an example of the characteristic (opening-flow characteristic) of the flow control valve used with a temperature control apparatus. It is a figure which shows an example of the characteristic (opening-flow characteristic) of the flow control valve used with a temperature control apparatus. It is a figure which shows the modification of the temperature control apparatus shown in FIG. It is a figure which shows the structure of the leak detection system which detects the leak of the flow control valve used for the temperature control apparatus of FIG. 1 or FIG. It is a figure which shows the partial modification of the temperature control apparatus of FIG. It is a figure which shows the partial modification of the temperature control apparatus of FIG. It is a figure which shows the whole structure of the temperature control apparatus with which the example of the characteristic part shown in FIG. 5 was applied. It is a figure which shows the partial modification of the temperature control apparatus of FIG. It is a figure which shows the specific structural example of an exposure apparatus main body. It is a flowchart figure which shows the manufacturing method of a device. It is a flowchart figure which shows the manufacturing method of a semiconductor element.

Explanation of symbols

  R ... reticle (mask), W ... wafer, RST ... reticle stage, PL ... projection optical system (temperature control target unit), WST ... wafer stage, exposure apparatus ... EXP, CH ... chamber, 10 ... exposure apparatus body, 100, DESCRIPTION OF SYMBOLS 100a ... Temperature control apparatus, 101 ... HFE system (fluid flow path), 102 ... Cold water system (refrigerant fluid flow path), 103 ... Hot water system (heat medium fluid flow path), 113a, 113c114a-114d, 124, 136 ... Heat Exchanger, 115a to 115d, 139 ... temperature sensor, 120 ... refrigerator, 125 ... compressor (compressor), 130 ... warm water circulation path, 130a-130d ... branch path, 134, 135a-135d ... flow control valve, 137, 143a, 143b, 157 ... detour, 144a, 144b, 158 ... flow rate detector, 145a, 145b, 159 ... detour amount control 155a, inlet branch pipe, 155b, 155c, auxiliary branch pipe, 156a, 156b, 156c, outlet junction pipe, 170, leak detection system, 170a, first leak detection system, 170b, second leak detection system, 171 ... Box, 177a to 177d, 181 ... Detection wiring, 176, 180 ... Leak detector, 178a to 178d ... Relay, U1 to U4 ... Temperature control target unit.

Claims (10)

A temperature control device for supplying a temperature-controlled fluid to each of a plurality of units of the exposure apparatus body,
A medium fluid flow path through which a medium fluid for cooling or heating the fluid flows;
The medium fluid flow path has a plurality of branch paths corresponding to each of the plurality of units, through which the medium fluid flows,
A heat exchanger for exchanging heat between the fluid and the medium fluid and a flow rate controller for controlling the flow rate of the medium fluid flowing through the heat exchanger are disposed in each of the plurality of branch paths,
The temperature adjusting device, wherein the medium fluid flow path is provided with a flow rate stabilizing means for maintaining a constant amount of the medium fluid flowing into each of the plurality of branch paths.   The flow rate stabilizing means includes a detour that bypasses a part of the medium fluid toward the heat exchanger for at least one branch path of the plurality of branch paths, and an inflow amount of the medium fluid in the branch path or The detector according to claim 1, further comprising: a detector that detects a change in the outflow amount; and a bypass amount controller that controls a flow rate of the medium fluid flowing through the bypass route based on a detection result of the detector. The temperature control apparatus described.   3. The temperature control according to claim 2, wherein the detour is provided for a branch path in which the flow fluctuation of the medium fluid flowing through the heat exchanger is relatively large among the plurality of branch paths. apparatus. The plurality of branch paths are classified into a first system in which the flow rate variation of the heat medium flowing through the heat exchanger is relatively small and a second system in which the flow rate variation of the heat medium flowing through the heat exchanger is relatively large. Has been
2. The temperature control device according to claim 1, wherein the flow rate stabilizing unit keeps an inflow amount of the medium fluid to each of the first system and the second system constant. The medium fluid flow path further has an inlet branch pipe that divides the medium fluid heading toward the plurality of branch paths into the first system and the second system,
The flow rate stabilizing means includes: a detour that bypasses a part of the medium fluid from the inlet branch pipe toward the second system; and an inflow amount or an outflow amount of the medium fluid in the first system or the second system The detector according to claim 4, further comprising: a detector that detects fluctuations in the flow rate; and a bypass amount controller that controls a flow rate of the medium fluid flowing through the bypass route based on a detection result of the detector. Temperature control device.   The system further comprises: a box that collectively accommodates the flow controllers of each of the plurality of branch paths; and a leakage detection system that detects leakage of the plurality of flow controllers. The temperature control apparatus in any one of Claim 1-5.   The liquid leakage detection system detects a first liquid leakage detection system that detects a relatively small amount of liquid leakage from each of the plurality of flow rate controllers, and a relatively large amount of liquid leakage from each of the plurality of flow rate controllers. The temperature control apparatus according to claim 6, further comprising: a second liquid leakage detection system that performs the operation.   The first liquid leakage detection system includes a liquid leakage detector, a plurality of detection wires individually associated with each of the plurality of flow rate controllers, and the liquid leakage detector on any of the plurality of detection wires. The temperature control apparatus according to claim 7, further comprising: a relay for switching the detection target. An exposure apparatus for transferring a mask pattern to a substrate via a projection optical system,
An exposure apparatus comprising the temperature control device according to claim 1. A device manufacturing method, wherein a device is manufactured using the exposure apparatus according to claim 9.

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