JP2006078439A - Semiconductor inspecting apparatus - Google Patents

Semiconductor inspecting apparatus Download PDF

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JP2006078439A
JP2006078439A JP2004265460A JP2004265460A JP2006078439A JP 2006078439 A JP2006078439 A JP 2006078439A JP 2004265460 A JP2004265460 A JP 2004265460A JP 2004265460 A JP2004265460 A JP 2004265460A JP 2006078439 A JP2006078439 A JP 2006078439A
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semiconductor device
signal
inspection
optical signal
probe
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Makoto Saito
誠 齊藤
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To realize a probe inspection via a light signal, and to enable electrical inspection of a semiconductor device (LSI) to be carried out, even when the probe inspection of a type which makes a probe needle to come into contact, cannot be carried out. <P>SOLUTION: A semiconductor inspection apparatus is provided, which inspects the electrical characteristics of the semiconductor device that is optically connectable to the outside via an optical interface, and which is equipped with a measuring device 10 for generating a testing electric signal to be fed to the semiconductor device and carrying out a measurement, based on a testing optical signal from the semiconductor device, in response to the testing electrical signal; a photoelectric converter 11 for converting the testing electrical signal into an optical signal and converting the testing optical signal into an electrical signal; and a probe card 12 for guiding the optical signal from the photoelectric converter 11 to the semiconductor device, and guiding the optical signal from the semiconductor device to the photoelectric converter 11. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は半導体装置の電気的特性を検査する半導体検査装置に関する。   The present invention relates to a semiconductor inspection apparatus for inspecting electrical characteristics of a semiconductor device.

従来の半導体検査装置では、プローブ針(プローブ端子)を検査対象の半導体装置の外部接続端子(接続ピン、パッド、バンプ電極等)に接触させることにより、電気的特性の検査を実施していた(例えば、特許文献1参照)。
特開平11−94910号公報
In the conventional semiconductor inspection apparatus, the electrical characteristics are inspected by bringing the probe needle (probe terminal) into contact with the external connection terminal (connection pin, pad, bump electrode, etc.) of the semiconductor device to be inspected ( For example, see Patent Document 1).
JP 11-94910 A

現状のLSIは、外部接続端子を外部に導出したタイプのパッケージ構造を有するものがほとんどであるが、将来的には、光信号による入出力端子を備えるパッケージ構造を有するものが出現する可能性がある(例えば、光コンピュータを搭載するLSIにおいて入出力インタフェースも光信号を用いて行う等)。このようなタイプの半導体装置(LSI)については、従来の、プローブ針(プローブ端子)を接触させる方式のプローブ検査を行うことができない。   Most of the current LSIs have a type of package structure in which external connection terminals are derived to the outside, but in the future, there is a possibility that those having a package structure with input / output terminals for optical signals will appear. (For example, in an LSI equipped with an optical computer, an input / output interface is also performed using an optical signal). Such a type of semiconductor device (LSI) cannot be subjected to a conventional probe test in which a probe needle (probe terminal) is brought into contact.

また、例えば、必要な外部接続端子の数が足らなくなったり、あるいは、キュービック型等の特殊な立体的構造をもつために、プローブ針の接触が困難になったりする等の事情が生じて、従来の、プローブ針(プローブ端子)を接触させる方式のプローブ検査を実施できなくなるような事態の発生も想定される。上記のようなケースでは、プローブ針(プローブ端子)を接触させて行う方式以外の、プローブ検査方式を採用する必要がある。   In addition, for example, the number of necessary external connection terminals is insufficient, or a special three-dimensional structure such as a cubic type makes it difficult to contact the probe needle. The occurrence of a situation in which the probe inspection of the type in which the probe needle (probe terminal) is brought into contact cannot be performed. In the case as described above, it is necessary to adopt a probe inspection method other than the method in which the probe needle (probe terminal) is brought into contact.

本発明は、光信号を介したプローブ検査を実現し、プローブ針を接触させるタイプのプローブ検査が実施できない場合においても、半導体装置(LSI)の電気的検査を行えるようにすることを目的とする。   An object of the present invention is to realize a probe inspection via an optical signal, and to perform an electrical inspection of a semiconductor device (LSI) even when a probe inspection of a type in which a probe needle is brought into contact cannot be performed. .

本発明の半導体検査装置は、光インターフェースを介して外部と光学的に接続可能な半導体装置の電気的特性を検査する半導体検査装置であって、前記半導体装置に対して供給するテスト用電気信号の生成と、前記テスト用電気信号に対する前記半導体装置からのテスト用光信号に基づく計測とを行う手段と、前記テスト用電気信号の光信号への変換と、前記テスト用光信号の電気信号への変換とを行う手段と、前記光電変換手段から出力される光信号の前記半導体装置への案内と、前記半導体装置から出力される光信号の前記光電変換手段への案内とを行う手段とを備える。   The semiconductor inspection apparatus of the present invention is a semiconductor inspection apparatus that inspects the electrical characteristics of a semiconductor device that can be optically connected to the outside via an optical interface, and that is a test electric signal supplied to the semiconductor device. Means for generating and measuring the test electrical signal based on the test optical signal from the semiconductor device; converting the test electrical signal into an optical signal; and converting the test optical signal into the electrical signal Means for performing conversion, means for guiding the optical signal output from the photoelectric conversion means to the semiconductor device, and means for guiding the optical signal output from the semiconductor device to the photoelectric conversion means. .

検査対象の半導体装置が光学的な入出力インタフェースを備える場合、光ファイバをプローブ針の代わりに使用して、光信号を介した(非接触方式の)プロ−ブ検査を実現することができる。プローブ針の接触が困難な場合も適用でき、また、プローブ針の曲がりや摩耗といった問題も生じない。また、光通信技術(変調、多重等の技術)を利用して、光信号(テスト用の信号や半導体装置からの測定信号)を効率的に多重化して多くの情報を送信し、受信側で復調し、所定の回路に分配する等すれば、従来にない大容量の情報を超高速に処理できる検査システムの実現も可能となる。   When the semiconductor device to be inspected has an optical input / output interface, an optical fiber can be used in place of the probe needle to realize a probe inspection (non-contact type) via an optical signal. It can also be applied to cases where it is difficult to contact the probe needle, and problems such as bending and wear of the probe needle do not occur. Also, using optical communication technology (modulation, multiplexing, etc.), optical signals (test signals and measurement signals from semiconductor devices) are efficiently multiplexed and a large amount of information is transmitted. By demodulating and distributing to a predetermined circuit, it is possible to realize an inspection system that can process a large amount of information that has not been conventionally available at an extremely high speed.

光学的な入出力インタフェースを備える半導体装置の一態様では、パッケージ構造内に光信号を電気信号に変換する受光素子、電気信号を光信号に変換する発光素子を内蔵する。検査対象の半導体装置自体が、受光素子および発光素子を内蔵し、直接的に、光信号による入出力インタフェースが可能な場合を規定したものである。半導体装置が有する機能を活用して、効率的な検査を実施できるというメリットがある。   In one embodiment of a semiconductor device including an optical input / output interface, a light receiving element that converts an optical signal into an electric signal and a light emitting element that converts an electric signal into an optical signal are incorporated in the package structure. The inspection target semiconductor device itself has a built-in light receiving element and light emitting element, and defines a case where an input / output interface using an optical signal is directly possible. There is an advantage that an efficient inspection can be performed by utilizing the function of the semiconductor device.

また、半導体装置の他の態様では、光信号を電気信号に変換する受光素子、電気信号を光信号に変換する発光素子を内蔵する光学的インタフェース手段が外付けされて構成される。検査対象の半導体装置に、光学的インタフェース手段を外付けし、この光学的インタフェース手段を介して光信号の入出力を可能とする場合を規定したものである。光学素子を内蔵しない、あるいは、内蔵できない半導体装置に対しても光信号を介したプローブ検査が可能である。また、光学的インタフェース手段の、半導体装置への装着構造(着脱構造)を工夫することにより、種々の態様のパッケージに対して光学式のプローブ検査を適用できるようになる。   In another aspect of the semiconductor device, a light receiving element that converts an optical signal into an electrical signal and an optical interface unit that incorporates a light emitting element that converts an electrical signal into an optical signal are externally configured. The optical interface unit is externally attached to the semiconductor device to be inspected, and the case where optical signals can be input / output through the optical interface unit is defined. It is possible to perform a probe inspection via an optical signal even for a semiconductor device that does not include or cannot incorporate an optical element. Further, by devising the mounting structure (detachable structure) of the optical interface means to the semiconductor device, optical probe inspection can be applied to various types of packages.

本発明によれば、光ファイバをプローブ針の代わりに使用して、光信号を介した(非接触方式の)プロ−ブ検査を実現することができる。したがって、プローブ針を接触させるタイプのプローブ検査が実施できない場合においても、半導体装置(IC)の電気的検査を行えるようになる。   According to the present invention, an optical fiber can be used in place of a probe needle to realize a probe inspection (non-contact method) via an optical signal. Therefore, even when a probe inspection of a type in which the probe needle is brought into contact cannot be performed, an electrical inspection of the semiconductor device (IC) can be performed.

図1は本発明の半導体検査装置の全体構成の概略を示す図である。図示されるように、本発明の半導体検査装置は、計測器10と、光電変換装置11と、プローブ針(プローブ端子)として機能する光ファイバを備えるプローブカード12と、を含んで構成される(図1では、光ファイバは不図示)。   FIG. 1 is a diagram showing an outline of the entire configuration of a semiconductor inspection apparatus according to the present invention. As illustrated, the semiconductor inspection apparatus of the present invention includes a measuring instrument 10, a photoelectric conversion device 11, and a probe card 12 including an optical fiber that functions as a probe needle (probe terminal) ( In FIG. 1, the optical fiber is not shown).

計測器10と光電変換器11とは、電気信号の入力線(Lin1)、ならびに、電気信号の出力線(Lout1)によって接続されている。また、光電変換器11とプローブカード12は、光信号の入力線(Lin2)、ならびに、光信号の出力線(Lout2)によって接続されている。   The measuring instrument 10 and the photoelectric converter 11 are connected by an electric signal input line (Lin1) and an electric signal output line (Lout1). The photoelectric converter 11 and the probe card 12 are connected by an optical signal input line (Lin2) and an optical signal output line (Lout2).

計測器10は、電気信号の出力線(Lout1)を介して、テスト用の電気信号を出力する。このテスト用の電気信号は、光電変換器11によって光信号に変換される。光電変換によって生成された光信号は、光信号の出力線(Lout2)を介してプローブカード12に送られ、光ファイバ(不図示)を介して、検査対象の半導体装置(IC:不図示)に送られる。   The measuring device 10 outputs an electrical signal for testing via an electrical signal output line (Lout1). The electrical signal for testing is converted into an optical signal by the photoelectric converter 11. The optical signal generated by the photoelectric conversion is sent to the probe card 12 via the optical signal output line (Lout2), and is sent to the semiconductor device (IC: not shown) to be inspected via the optical fiber (not shown). Sent.

検査対象の半導体装置側から送られてくる光信号(所定の電気特性の測定信号等)は、プローブカード12の光ファイバを経由し、さらに、光信号の入力線(Lin2)を介して光電変換器11に到達し、光電変換によって、電気信号に変換される。光電変換によって得られた電気信号は、電気信号の入力線(Lin1)を介して計測器10に入力される。計測器10は、この入力信号に基づいて測定ならびに所定の検査(良品/不良品判定等)を実施する。   An optical signal (a measurement signal having a predetermined electrical characteristic) sent from the semiconductor device to be inspected passes through the optical fiber of the probe card 12 and further undergoes photoelectric conversion via the optical signal input line (Lin2). It reaches the device 11 and is converted into an electric signal by photoelectric conversion. The electric signal obtained by the photoelectric conversion is input to the measuring instrument 10 via the electric signal input line (Lin1). The measuring instrument 10 performs measurement and predetermined inspection (non-defective / defective product determination, etc.) based on this input signal.

図2はプローブカードに備わる光ファイバと検査対象側の装置との間の、光信号の授受の概要を示す図である。図示されるように、プローブ針(プローブ端子)として機能する光ファイバ21a(図1のLout2に相当する)の一端から、光電変換器11から出力された光信号(IN1)が入力され、この光ファイバ21aを伝播した光信号(IN2)は、光ファイバ21aの他端から取り出され、検査対象側の装置(検査対象の半導体装置を含む)40上の受光素子30に導かれる。そして、電気信号に変換され、検査対象の半導体装置(IC)の内部回路に、適宜、供給される。   FIG. 2 is a diagram showing an outline of transmission / reception of an optical signal between an optical fiber provided in the probe card and a device on the inspection object side. As shown in the drawing, an optical signal (IN1) output from the photoelectric converter 11 is input from one end of an optical fiber 21a (corresponding to Lout2 in FIG. 1) that functions as a probe needle (probe terminal). The optical signal (IN2) propagated through the fiber 21a is taken out from the other end of the optical fiber 21a and guided to the light receiving element 30 on the inspection target device (including the inspection target semiconductor device) 40. Then, it is converted into an electric signal and supplied as appropriate to the internal circuit of the semiconductor device (IC) to be inspected.

同様に、検査対象側の装置(検査対象の半導体装置を含む)40上の発光素子31から出射された光(OUT1)は、光ファイバ21b(図1のLin2に相当する)の一端(検査対象側の装置40寄りの一端)から入力され、この光ファイバ21bを伝播した光信号(OUT2)は、光ファイバ21bの他端から取り出され、光電変換装置11に導かれて電気信号に変換され、計測器10に入力される。   Similarly, the light (OUT1) emitted from the light emitting element 31 on the inspection target apparatus (including the inspection target semiconductor device) 40 is one end (inspection target) of the optical fiber 21b (corresponding to Lin2 in FIG. 1). The optical signal (OUT2) that is input from one end near the device 40 on the side and propagates through the optical fiber 21b is taken out from the other end of the optical fiber 21b, led to the photoelectric conversion device 11, and converted into an electrical signal. Input to the measuring instrument 10.

図3は図1および図2に示される半導体検査装置における、信号処理経路の構成例を示す図である。図3では、計測器10から検査対象側の装置(検査対象の半導体装置を含む)40に信号を送信する経路のみが描かれている(逆の経路も、同様の構成である)。図示されるように、計測器11に隣接する光電変換器11は、直列に接続された、抵抗R1および発光ダイオードD1を含んで構成される。また、検査対象側の装置(検査対象の半導体装置を含む)40に接続される受光素子30は、少なくとも1個のフォトダイオード(あるいはフォトトランジスタ)により構成される。   FIG. 3 is a diagram showing a configuration example of a signal processing path in the semiconductor inspection apparatus shown in FIGS. 1 and 2. In FIG. 3, only a path for transmitting a signal from the measuring instrument 10 to the apparatus 40 on the inspection target side (including the semiconductor apparatus to be inspected) is drawn (the reverse path has the same configuration). As illustrated, the photoelectric converter 11 adjacent to the measuring instrument 11 includes a resistor R1 and a light emitting diode D1 connected in series. Further, the light receiving element 30 connected to the inspection-side device (including the inspection-target semiconductor device) 40 is composed of at least one photodiode (or phototransistor).

図3から明らかなように、本実施形態の半導体検査装置では、従来のように導電体の物理的な接触ではなく、光ファイバを介した光通信によって情報の授受を行っており、テスタ側(計測器10側)、ならびに、検査対象側の装置40(検査対象の半導体装置を含む)側の双方において、光学的インタフェース手段を備えるのが構成上の特徴である。   As is apparent from FIG. 3, in the semiconductor inspection apparatus of the present embodiment, information is exchanged by optical communication via an optical fiber instead of physical contact with a conductor as in the prior art. It is a structural feature that both the measuring instrument 10 side) and the device 40 on the inspection object side (including the semiconductor device to be inspected) are provided with optical interface means.

本発明によれば、従来のような、プローブ針(プローブ端子)をICの外部接続端子に接続するタイプとは全く異なる、非接触タイプのプローブ検査が可能となり、プローブ針(プローブ端子)の変形、摩耗等の問題が解消され、検査の信頼性が向上し、また、従来にない高速な検査を実施することが可能となる。   According to the present invention, it is possible to perform a non-contact type probe inspection which is completely different from the conventional type in which the probe needle (probe terminal) is connected to the external connection terminal of the IC, and the probe needle (probe terminal) is deformed. As a result, problems such as wear are solved, the reliability of inspection is improved, and unprecedented high-speed inspection can be performed.

本発明の半導体検査装置は、光ファイバをプローブ針の代わりに使用して、光信号を介した(非接触方式の)プロ−ブ検査を実現することができるため、プローブ針を接触させるタイプのプローブ検査が実施できない場合においても、半導体装置(IC)の電気的検査を行えるようになるという効果を有し、半導体装置の電気的特性を検査する半導体検査装置等として有用である。   Since the semiconductor inspection apparatus of the present invention can realize a probe inspection (non-contact type) via an optical signal by using an optical fiber instead of a probe needle, Even when the probe inspection cannot be performed, the semiconductor device (IC) can be electrically inspected, and is useful as a semiconductor inspection device for inspecting the electrical characteristics of the semiconductor device.

本発明の半導体検査装置の全体構成の概略を示す図The figure which shows the outline of the whole structure of the semiconductor inspection apparatus of this invention プローブカードに備わる光ファイバと検査対象側の装置との間の、光信号の授受の概要を示す図The figure which shows the outline of the transmission and reception of the optical signal between the optical fiber with which the probe card is equipped, and the inspection side device 図1および図2に示される半導体検査装置における、信号処理経路の構成例を示す図The figure which shows the structural example of the signal processing path | route in the semiconductor inspection apparatus shown by FIG. 1 and FIG.

符号の説明Explanation of symbols

10 計測器
11 光電変換器
12 プローブカード
21a,21b プローブ端子として機能する光ファイバ
30 受光素子
31 発光素子
40 検査対象側の装置(検査対象の半導体装置を含む)
DESCRIPTION OF SYMBOLS 10 Measuring instrument 11 Photoelectric converter 12 Probe card 21a, 21b Optical fiber which functions as a probe terminal 30 Light receiving element 31 Light emitting element 40 Apparatus by inspection side (including semiconductor device to be inspected)

Claims (1)

光インターフェースを介して外部と光学的に接続可能な半導体装置の電気的特性を検査する半導体検査装置であって、
前記半導体装置に対して供給するテスト用電気信号の生成と、前記テスト用電気信号に対する前記半導体装置からのテスト用光信号に基づく計測とを行う計測手段と、
前記テスト用電気信号の光信号への変換と前記テスト用光信号の電気信号への変換とを行う変換手段と、
変換した光信号の前記半導体装置への案内と前記半導体装置から出力される光信号の前記変換手段への案内とを行う案内手段と、
を備える半導体検査装置。
A semiconductor inspection apparatus for inspecting electrical characteristics of a semiconductor device optically connectable to the outside through an optical interface,
Measurement means for performing generation of a test electrical signal supplied to the semiconductor device and measurement based on a test optical signal from the semiconductor device for the test electrical signal;
Conversion means for converting the test electrical signal into an optical signal and converting the test optical signal into an electrical signal;
Guiding means for guiding the converted optical signal to the semiconductor device and guiding the optical signal output from the semiconductor device to the converting means;
A semiconductor inspection apparatus.
JP2004265460A 2004-09-13 2004-09-13 Semiconductor inspecting apparatus Pending JP2006078439A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011242216A (en) * 2010-05-17 2011-12-01 Advantest Corp Testing device, testing method, and device interface
US8987599B2 (en) 2009-08-05 2015-03-24 Prysmian S.P.A. Flat energy cable

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8987599B2 (en) 2009-08-05 2015-03-24 Prysmian S.P.A. Flat energy cable
JP2011242216A (en) * 2010-05-17 2011-12-01 Advantest Corp Testing device, testing method, and device interface

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