JP2006063450A - Method for electrolytic deposition of metal - Google Patents
Method for electrolytic deposition of metal Download PDFInfo
- Publication number
- JP2006063450A JP2006063450A JP2005243009A JP2005243009A JP2006063450A JP 2006063450 A JP2006063450 A JP 2006063450A JP 2005243009 A JP2005243009 A JP 2005243009A JP 2005243009 A JP2005243009 A JP 2005243009A JP 2006063450 A JP2006063450 A JP 2006063450A
- Authority
- JP
- Japan
- Prior art keywords
- electrolytic solution
- electrolyte
- copper
- ethoxylate
- copper layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000008021 deposition Effects 0.000 title abstract description 4
- 239000002184 metal Substances 0.000 title 1
- 239000003792 electrolyte Substances 0.000 claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 239000010949 copper Substances 0.000 claims abstract description 21
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 10
- -1 alkyl sulfonic acid Chemical compound 0.000 claims abstract description 8
- 239000007859 condensation product Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 14
- 230000002378 acidificating effect Effects 0.000 claims description 7
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- 150000008052 alkyl sulfonates Chemical class 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- 150000007942 carboxylates Chemical class 0.000 claims description 2
- 239000008151 electrolyte solution Substances 0.000 claims 10
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 229920003023 plastic Polymers 0.000 abstract description 3
- 239000004033 plastic Substances 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 7
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- 229950011260 betanaphthol Drugs 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- BQPBZDSDFCDSAO-UHFFFAOYSA-N 2-naphthalen-2-yloxyethanol Chemical compound C1=CC=CC2=CC(OCCO)=CC=C21 BQPBZDSDFCDSAO-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-M naphthalene-1-sulfonate Chemical compound C1=CC=C2C(S(=O)(=O)[O-])=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-M 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
Abstract
Description
本発明は、酸性電解質からの艶のない又は半光沢の銅層を電解析出する方法に関する。 The present invention relates to a method for electrolytically depositing a dull or semi-glossy copper layer from an acidic electrolyte.
酸性銅電解質は、基材表面に機能的又は装飾的な被膜を形成するために、多種多様の方法で、基材の表面被膜に用いられる。
用いられる金属化方法は用いられる電解質と同様に、金属化される基材のタイプ及び性質による。金属性及び非導電性基材のいずれにも対応する表面層を供給される。
Acidic copper electrolytes are used in the surface coating of substrates in a wide variety of ways to form a functional or decorative coating on the substrate surface.
The metallization method used depends on the type and nature of the substrate to be metallized as well as the electrolyte used. Surface layers corresponding to both metallic and non-conductive substrates are supplied.
特に、ワイヤー、バンド又はチューブといった基材の金属化において、用いる電解質と用いられる方法は、安定性と析出速度について特別な要求を満たさなければならない。こうして、上記に述べた伸張生産物は、例えば高速引抜（pull-through）装置中で金属化されることがある。短い接触時間（高処理速度）にかかわらず、基材表面を十分に金属化するためには、高い電流密度でめっきしなければならない。 In particular, in the metallization of substrates such as wires, bands or tubes, the electrolyte used and the method used must meet special requirements for stability and deposition rate. Thus, the stretch product described above may be metallized, for example, in a high-speed pull-through device. Despite the short contact time (high processing speed), in order to fully metallize the substrate surface, it must be plated at a high current density.
通常、銅を含有する酸性サルフェートは、前述の基材上に銅を沈殿させるのに用いられる。しかしながら、高い電流密度の存在下においては、安定性が十分でないので、そのような電解質は、高速引抜装置中での使用に適さない。 Usually, acidic sulfate containing copper is used to precipitate copper on the aforementioned substrate. However, in the presence of high current densities, such electrolytes are not suitable for use in high speed drawing devices because of insufficient stability.
本発明の目的は、酸性電解質からの艶のない又は半光沢の銅層を基質上に電解析出する方法を提供することであり、その方法は高速引抜（pull-through）装置中で使用されることに適する。さらに、本発明の目的は、前記方法を行なうのに適した電解質を提供することである。 The object of the present invention is to provide a method for electrolytic deposition of a dull or semi-glossy copper layer from an acidic electrolyte onto a substrate, which method is used in a high-speed pull-through apparatus. Suitable for that. Furthermore, the object of the present invention is to provide an electrolyte suitable for carrying out the method.
本発明の目的は酸性電解質からの艶のない又は半光沢の銅層を基質上に電解析出する方法によって達成され、その方法はおおよそ１０以上から１００Ａ／dm2の間、好ましくは２０以上から８０Ａ／dm2の間からなる高い電流密度中で層を析出させることを特徴とする。本発明によると、前記方法は２２から６０℃の間、好ましくは４５から５５℃の間からなる温度で行なわれる。これらの処理条件は、本発明の予備段階で非常に薄くメッキされた金属性プラスチック又はプラスチック上に、高速引抜（pull-through）装置中で十分な厚さと堅固さを有する銅層を析出することに適している。 The object of the present invention is achieved by a method of electrolytically depositing a matte or semi-glossy copper layer from an acidic electrolyte on a substrate, the method being between approximately 10 and 100 A / dm 2 , preferably from 20 and above. It is characterized in that the layer is deposited in a high current density comprised between 80 A / dm 2 . According to the invention, the process is carried out at a temperature comprised between 22 and 60 ° C., preferably between 45 and 55 ° C. These processing conditions are to deposit a copper layer with sufficient thickness and firmness in a high-speed pull-through apparatus on a metallic plastic or plastic that has been plated very thinly in the preliminary stage of the present invention. Suitable for
電解質に関しては、本発明の目的は銅を有する電解質であって、スルホン酸アルキルを含有する電解質によって達成される。スルホン酸アルキルは、好ましくはスルホン酸メタンである、しかし、処理条件下で十分な安定性を示すその他のスルホン酸も全て適する。 With respect to the electrolyte, the object of the present invention is achieved by an electrolyte comprising copper and containing an alkyl sulfonate. The alkyl sulfonate is preferably methane sulfonate, but any other sulfonic acid that is sufficiently stable under the processing conditions is also suitable.
前記電解質は、銅をそのサルフェート、ニトレート、ハロゲン化物、それらのカルボキシレートの形態で有することができる。さらに、前記電解質は十分な量のエトキシレート、好ましくは２−ナフトールエトキシレート[２−（２−ナフチロキシ）−エタノール]を含む。さらに、前記電解質は、一般式Ｉ（右側はスルホン酸ナフタレン、左側はスルホン酸ナフタレンが縮合する分子を示す）で表される十分な量のナフタレン縮合物生成物を含む。 The electrolyte may have copper in the form of its sulfate, nitrate, halide, or their carboxylate. Furthermore, the electrolyte contains a sufficient amount of ethoxylate, preferably 2-naphthol ethoxylate [2- (2-naphthyloxy) -ethanol]. Further, the electrolyte contains a sufficient amount of a naphthalene condensate product represented by the general formula I (the right side represents a naphthalene sulfonate and the left side represents a molecule to which the sulfonic naphthalene is condensed).
式中nは整数である。前記電解質は、さらに公知の緩衝剤、界面活性剤、それらの組み合わせといった典型的な処理材料を含有することができる。 In the formula, n is an integer. The electrolyte may further contain typical processing materials such as known buffers, surfactants, and combinations thereof.
以下に本発明による電解質の例を述べる、本発明は以下の例に限定されない。 Examples of the electrolyte according to the present invention will be described below. The present invention is not limited to the following examples.
引抜（pull-through）装置中で銅を析出するための水性の電解質組成物：
銅：４０から９０g／ｌ、好ましくは７５g／ｌ
スルホン酸メタン：５０から１３０ml／ｌ、好ましくは９０ml／ｌ
ハロゲン化物イオン：４０から１００mg／ｌ、好ましくは5０mg／ｌ
2−ナフトールエトキシレート：５から３０g／ｌ、好ましくは１０g／ｌ
ナフタレン縮合生成物：０．００１から１g／ｌ、好ましくは０．１g／ｌ
好ましくは、電解質はハロゲン化物イオンとして塩化物を含む。
実施例２は本発明による方法の典型的な処理条件を示す。
Aqueous electrolyte composition for depositing copper in a pull-through apparatus:
Copper: 40 to 90 g / l, preferably 75 g / l
Methane sulfonate: 50 to 130 ml / l, preferably 90 ml / l
Halide ion: 40 to 100 mg / l, preferably 50 mg / l
2-Naphthol ethoxylate: 5 to 30 g / l, preferably 10 g / l
Naphthalene condensation product: 0.001 to 1 g / l, preferably 0.1 g / l
Preferably, the electrolyte contains chloride as halide ions.
Example 2 shows typical processing conditions of the method according to the invention.
本発明により酸性電解質からの艶のない又は半光沢の銅層を基質上析出するための処理条件を示す：
基材： 黄銅
温度： ２５℃
電流密度： １０Ａ／ｄｍ２
引抜（pull-through）速度： ５０ｍ／分
析出銅層の層厚： ５μm
Process conditions for depositing a matte or semi-glossy copper layer from an acidic electrolyte on a substrate according to the present invention are shown:
Base material: BrassTemperature: 25 ° C
Current density: 10 A / dm 2
Pull-through speed: 50 m / analyzed copper layer thickness: 5 μm
スルホン酸メタンを基本とする電解質によりメッキされた基質は伸張率の点で、硫酸を基本とする電解質によりメッキされた基質の伸張率に較べ劣ってはいない。 Substrates plated with electrolytes based on sulfonic acid methane are not inferior to elongation rates of substrates plated with electrolytes based on sulfuric acid in terms of elongation.
次の表においては、スルホン酸メタンと硫酸でメッキされた基質の伸張率（％）を示す。 In the following table, the elongation percentage (%) of the substrate plated with sulfonic acid methane and sulfuric acid is shown.
Claims (8)
銅：４０から９０ｇ／ｌ、好ましくは７５ｇ／ｌ
スルホン酸メタン：５０から１３０ml／ｌ、好ましくは９０ml／ｌ
ハロゲン化物イオン：４０から１００mg／ｌ、好ましくは５０mg／ｌ
エトキシレート：５から３０g／ｌ、好ましくは１０g／ｌ
ナフタレン縮合生成物：０．００１から１g／ｌ、好ましくは０．１g／ｌ An electrolytic solution for performing the method according to any one of the preceding claims, wherein the electrolytic solution contains at least the following components:
Copper: 40 to 90 g / l, preferably 75 g / l
Methane sulfonate: 50 to 130 ml / l, preferably 90 ml / l
Halide ion: 40 to 100 mg / l, preferably 50 mg / l
Ethoxylate: 5 to 30 g / l, preferably 10 g / l
Naphthalene condensation product: 0.001 to 1 g / l, preferably 0.1 g / l
The electrolytic solution according to any one of claims 4 to 7, wherein the electrolytic solution contains copper in the form of at least one compound selected from the group consisting of sulfate, nitrate, halide, and carboxylate. liquid.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004041701A DE102004041701A1 (en) | 2004-08-28 | 2004-08-28 | Process for the electrolytic deposition of metals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006063450A true JP2006063450A (en) | 2006-03-09 |
| JP4283256B2 JP4283256B2 (en) | 2009-06-24 |
Family
ID=35395909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005243009A Active JP4283256B2 (en) | 2004-08-28 | 2005-08-24 | Electrodeposition method for metals |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20060049058A1 (en) |
| EP (1) | EP1630258B1 (en) |
| JP (1) | JP4283256B2 (en) |
| CN (1) | CN1740399A (en) |
| DE (1) | DE102004041701A1 (en) |
| ES (1) | ES2402688T3 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009041097A (en) * | 2007-08-10 | 2009-02-26 | Rohm & Haas Electronic Materials Llc | Copper plating method |
| EP2568063A1 (en) | 2011-09-09 | 2013-03-13 | Rohm and Haas Electronic Materials LLC | Low internal stress copper electroplating method |
| US10128022B1 (en) * | 2017-10-24 | 2018-11-13 | Northrop Grumman Systems Corporation | Lightweight carbon nanotube cable comprising a pair of plated twisted wires |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2525942A (en) * | 1945-06-29 | 1950-10-17 | Standard Oil Co | Electrodepositing bath and process |
| US4036711A (en) * | 1975-12-18 | 1977-07-19 | M & T Chemicals Inc. | Electrodeposition of copper |
| US4134803A (en) * | 1977-12-21 | 1979-01-16 | R. O. Hull & Company, Inc. | Nitrogen and sulfur compositions and acid copper plating baths |
| US4347108A (en) * | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
| US5051154A (en) * | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
| US5849171A (en) * | 1990-10-13 | 1998-12-15 | Atotech Deutschland Gmbh | Acid bath for copper plating and process with the use of this combination |
| DE4032864A1 (en) * | 1990-10-13 | 1992-04-16 | Schering Ag | ACIDIC BATH FOR THE GALVANIC DEPOSITION OF COPPER COVERS AND METHODS USING THIS COMBINATION |
| US5385661A (en) * | 1993-09-17 | 1995-01-31 | International Business Machines Corporation | Acid electrolyte solution and process for the electrodeposition of copper-rich alloys exploiting the phenomenon of underpotential deposition |
| DE4338148C2 (en) * | 1993-11-04 | 1997-01-30 | Atotech Deutschland Gmbh | Process for the electrolytic deposition of dull and pimple-free copper layers with high elongation at break on substrate surfaces |
| US6284309B1 (en) * | 1997-12-19 | 2001-09-04 | Atotech Deutschland Gmbh | Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom |
| US6444110B2 (en) * | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| US6605204B1 (en) * | 1999-10-14 | 2003-08-12 | Atofina Chemicals, Inc. | Electroplating of copper from alkanesulfonate electrolytes |
| US6491806B1 (en) * | 2000-04-27 | 2002-12-10 | Intel Corporation | Electroplating bath composition |
| KR100366631B1 (en) * | 2000-09-27 | 2003-01-09 | 삼성전자 주식회사 | Electrolyte for copper plating comprising polyvinylpyrrolidone and electroplating method for copper wiring of semiconductor devices using the same |
| US6776893B1 (en) * | 2000-11-20 | 2004-08-17 | Enthone Inc. | Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect |
| EP1308541A1 (en) * | 2001-10-04 | 2003-05-07 | Shipley Company LLC | Plating bath and method for depositing a metal layer on a substrate |
| US6843852B2 (en) * | 2002-01-16 | 2005-01-18 | Intel Corporation | Apparatus and method for electroless spray deposition |
| US6676823B1 (en) * | 2002-03-18 | 2004-01-13 | Taskem, Inc. | High speed acid copper plating |
| ES2531163T3 (en) * | 2002-10-11 | 2015-03-11 | Enthone | Procedure and electrolyte for galvanic deposition of bronzes |
| US20060260948A2 (en) * | 2005-04-14 | 2006-11-23 | Enthone Inc. | Method for electrodeposition of bronzes |
-
2004
- 2004-08-28 DE DE102004041701A patent/DE102004041701A1/en not_active Withdrawn
-
2005
- 2005-08-23 ES ES05018241T patent/ES2402688T3/en active Active
- 2005-08-23 EP EP05018241A patent/EP1630258B1/en active Active
- 2005-08-24 JP JP2005243009A patent/JP4283256B2/en active Active
- 2005-08-26 CN CN200510092292.7A patent/CN1740399A/en active Pending
- 2005-08-29 US US11/214,421 patent/US20060049058A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP1630258A1 (en) | 2006-03-01 |
| EP1630258B1 (en) | 2013-02-27 |
| DE102004041701A1 (en) | 2006-03-02 |
| US20060049058A1 (en) | 2006-03-09 |
| JP4283256B2 (en) | 2009-06-24 |
| ES2402688T3 (en) | 2013-05-07 |
| CN1740399A (en) | 2006-03-01 |
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