JP2006062016A - Manufacturing method of microstructure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a microstructure having a micro space for displacement of the microstructure, with the space in a clean state. <P>SOLUTION: A peripheral sacrifice layer 105 of a contact electrode 106 is removed by dry etching through a first opening part 108 with a second opening part 109 stopped up with resist pattern, thereby forming a space 110 partly on a lower electrode 103. Subsequently, a substrate is dipped in a predetermined cleaning liquid, whereby the cleaning liquid is put in the state of acting on the interior of the space 110. As the cleaning liquid, a hydrogen fluoride solution can be used. A polymerization film or fine particle-like residue adhering to the surface of the respective electrodes exposed to the interior of the space 110 can be removed by the above cleaning processing. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a microstructure formed on a semiconductor substrate by a micromachine technique, and more particularly to a method for manufacturing a microstructure having a space between two electrode structures.

  A microelectromechanical system (MEMS) technology for producing a fine structure on a semiconductor substrate such as silicon or an insulator substrate such as glass has been developed by a micromachining technique. This MEMS is being used in various fields such as various sensor fields, medical fields, and wireless communication fields. In particular, a fine switch structure manufactured by micromachine technology is called a MEMS switch and has excellent characteristics as a high-frequency switch (see Non-Patent Document 1).

  There are two types of MEMS switches as described above: capacitive switches and contact switches. The capacitive switch includes a fixed electrode formed on a substrate and a movable electrode formed on the top of the fixed electrode, and the distance between the fixed electrode and the fixed electrode can be varied by displacing the movable electrode by electrostatic force. Thus, the capacitance between the fixed electrode and the movable electrode is changed to realize the switch operation. In the case of this switch structure, since the fixed electrode and the movable electrode are not in electrical contact, the surface of each electrode does not need to be a metal surface and may be covered with an insulating film.

  On the other hand, the contact-type switch has a fixed electrode and a movable electrode as in the case of the capacitive switch. For example, the movable electrode is driven (displaced) by electrostatic force, and the contact electrode fixed to the movable electrode and the fixed electrode are in electrical contact. By doing so, the switch operation is realized. In the case of the contact type switch, it is necessary that the contact portion has a good contact, and the surfaces of the fixed electrode and the contact electrode are metal surfaces and the contact resistance is required to be small.

In the conventional manufacturing method of the fine structure having a space between the electrode structures as described above, a planar structure in which a sacrificial layer is sandwiched between two electrode structures is first manufactured, and then the sacrificial layer is removed. A method of forming a space between electrodes is frequently used.
Here, as a method of removing the sacrificial layer, first, a method of removing the sacrificial layer by dry etching (see Non-Patent Document 2), and second, a method of cleaning by wet processing after removing the sacrificial layer by dry etching. Third, there is a method of cleaning by a special treatment after removing the sacrificial layer by dry etching.

  As the method for removing the sacrificial layer by the first dry etching, a method for removing the sacrificial layer by dry etching using oxygen plasma and manufacturing a fine structure is described. However, this method has a problem that the polymer film and fine particles generated by the reaction of the plasma and the sacrificial layer on the surface of the contact electrode become residues, and good contact characteristics cannot be obtained.

  In addition, a method has been proposed in which a sacrificial layer is removed by heating the sacrificial layer and exposing the sacrificial layer to an ozone atmosphere (see Patent Document 1). According to this method, formation of a polymer film is suppressed as compared with the above-described method using oxygen plasma, but depending on the material of the sacrificial layer and the process conditions of the ozone treatment, a polymer film is formed on the electrode surface and the contact characteristics deteriorate. There is a problem of doing.

  In the method of cleaning by wet processing after removing the sacrificial layer by the second dry etching, good contact characteristics can be obtained by cleaning the electrode surface by wet processing. However, in this method, when the electrode structure has a fine size, there is a problem that the electrodes stick to each other in the drying process after the wet treatment or are broken due to the surface tension of the solution used in the wet treatment (non-patent) Reference 3).

  Here, a problem that the electrodes stick to each other by wet cleaning will be described with reference to FIGS. 6 (a) and 6 (b). In order to produce a fine structure having a space between two electrode structures, for example, as shown in FIG. 6A, an insulating layer 302 is formed on a semiconductor substrate 301, and the first electrode is formed. 303 and the support member 304 are formed, and after the sacrificial layer 305 is formed thereon, the upper surface of the support member 304 is exposed on the surface of the sacrificial layer 305.

  Next, the second electrode 306 having a plurality of openings is formed on the sacrificial layer 305. Thereafter, the sacrificial layer 305 is removed by dry etching through the opening of the second electrode 306, whereby a microstructure having a space between the second electrode 306 and the first electrode 303 is obtained. In this state, there are polymerized films and fine particle residues on the surfaces of the second electrode 306 and the first electrode 303. Therefore, a cleaning process is required to remove these residues.

When wet treatment is used as a cleaning method, the residue can be effectively removed. A method of removing the polymer film on the electrode surface by washing by wet treatment has a wide range of technical accumulation in semiconductor manufacturing technology and is widely used as a washing method.
However, when cleaning the microstructure having a space between the electrodes, the stress caused by the surface tension of the treatment solution exceeds the bending strength of the microstructure, and in the drying process after the wet treatment, as shown in FIG. Then, the second electrode 306 and the first electrode 303 are attached. In this state, the switch operation due to the displacement of the second electrode 306 cannot be obtained.

  As a technique for solving the problem of surface tension in liquid processing, for example, a cleaning method using a solid aerosol and a cleaning method using a supercritical fluid have been proposed (see Non-Patent Document 3). However, in the cleaning method using the solid aerosol, the cleaning mechanism is an impact force when the solid particles collide with the substrate, which causes a problem of destruction of a fine pattern.

  On the other hand, in the cleaning method using a supercritical fluid, it is possible to perform liquid processing without destroying the fine pattern. However, processing using supercritical fluids requires special cleaning equipment that can withstand high pressures, and it is necessary to repeat processing such as pressurization, heating, decompression, and replacement multiple times. It takes a lot of time for processing, and it is not easy to reduce the cost of the manufacturing process and cope with mass production (see Patent Document 2).

The applicant has not yet found prior art documents related to the present invention by the time of filing other than the prior art documents specified by the prior art document information described in this specification.
JP 2002-219695 A JP 2001-176837 A GMRebeiz and JBMuldavin, “RF MEMS switches and switch circuits”, IEEE Microwave Magazine, Vol.2, No.4, pp.59-70, Dec.2001. D. Hah, E. Yoon, and S. Hong, "A low-voltage actuated micromachined microwave switch using torsion springs and leverge", IEEE Trans. Microwave Theory and Techniques, Vol. 48, No. 12, pp. 2540-2545 , Dec. 2000. Tsuji, Kuniyasu, Hattori, “Limits of wet cleaning in high-aspect-ratio microstructure and pattern-break-free cleaning technology”, IEICE Tech. 15-20, October 2003.

As described above, conventionally, when a minute structure having a movable part such as a MEMS is manufactured, if a minute space in which the movable part is arranged is to be manufactured in a clean state, a large-scale apparatus is required. It was not easy because it was necessary.
The present invention has been made to solve the above-described problems, and a fine structure having a fine space that enables displacement of the fine structure is obtained in a state where the space is clean. It aims to be able to form.

In the microstructure manufacturing method according to the present invention, the support member is fixed at a predetermined position on the semiconductor substrate, and the first electrode is fixed at a predetermined distance from the support member in the movable space between the support members. A first step in which the sacrificial layer is formed on the semiconductor substrate so as to fill the movable space and cover the first electrode, and an upper portion of the first electrode. A third step in which the second electrode is formed on the sacrificial layer; and a state in which a plate-like upper structure having a plurality of openings in the region of the movable space is formed on the support member; Including a region where the formation region of the first electrode and the formation region of the second electrode overlap, and a part of the sacrifice is made through an opening disposed in the first region separated from the support member by a predetermined distance. The layer was removed, and the space where some of the first electrodes and some of the second electrodes were exposed was And a predetermined cleaning liquid is supplied into the space through the opening disposed in the first region, and a fifth step in which a part of the sacrificial layer remains between the space and the support member. At least a sixth step of cleaning a portion exposed in the space with the cleaning liquid and a seventh step of removing the remaining sacrificial layer through the opening by dry etching after the cleaning liquid is dried are provided. Is.
According to this manufacturing method, the cleaning liquid comes into contact with the portion exposed in the space provided in the sacrificial layer, and the surface tension when the cleaning liquid dries also acts on the portion exposed in the space provided in the sacrificial layer. To do.

In the fine structure manufacturing method, if the sacrificial layer is made of an organic resin, the sacrificial layer can be removed by dry etching using ozone.
In the fine structure manufacturing method, in the fifth step, a mask pattern having an opening is formed on the upper structure at a location corresponding to the first region, and the opening is disposed in the first region. Then, a part of the sacrificial layer may be removed.

  As described above, according to the present invention, the cleaning liquid is brought into contact with the portion exposed in the space provided in the sacrificial layer, and the surface tension when the cleaning liquid dries is increased in the space provided in the sacrificial layer. The fine structure having a fine space that enables displacement of the fine structure can be obtained by acting on the exposed portion of the fine structure and allowing cleaning with the cleaning liquid without deforming the fine structure. An excellent effect that the space can be formed in a clean state is obtained.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a process diagram for explaining a method for manufacturing a microstructure according to an embodiment of the present invention. First, as shown in FIG. 1A, an interlayer insulating layer 102 is formed on a semiconductor substrate 101, a lower electrode (first electrode) 103 and a supporting member 104 are formed, and a supporting member is formed on the interlayer insulating layer 102. A sacrificial layer 105 with the upper surface of 104 exposed is formed, and a contact electrode (second electrode) 106 is formed on the sacrificial layer 105 above the lower electrode 103.

  Subsequently, a flat upper structure 107 is formed on the support member 104, the sacrificial layer 105, and the contact electrode 106. Note that the support member 104 and the upper structure 107 may be made of metal or may be made of an insulator such as silicon oxide or silicon nitride.

  The support member 104 may have a frame shape that is integrally formed, or may be configured by a plurality of structures that are spaced from each other around each electrode. The upper structure 107 may be supported by the support member 104 in a state where the region between the support members 104 is a movable space, and each electrode may be disposed in the movable space.

  Note that the semiconductor substrate 101 may include a semiconductor integrated circuit including a plurality of transistors, resistors, capacitors, wirings, and the like, for example, contact holes for electrical connection with the wirings of the integrated circuit, It may be formed at a predetermined location of the interlayer insulating layer 102.

  Here, the upper structure 107 includes a plurality of first openings 108 arranged around the contact electrode 106 and a plurality of second openings 109 arranged around these. A region where the first opening 108 is formed (first region) is separated from the support member 104 by a predetermined distance, and includes a portion of the lower electrode 103 and the contact electrode 106 disposed opposite thereto. Good. In FIG. 1, the first opening 108 is arranged in a region narrower than the lower electrode 103, but the present invention is not limited to this. For example, when the lower electrode 103 is formed in a region that is sufficiently narrower than the region (movable space) surrounded by the support member 104 together with the contact electrode 106, the first opening is formed in a region wider than the lower electrode 103. 108 may be formed.

  Next, for example, the second opening 109 is blocked by a resist pattern (not shown), and dry etching through the first opening 108 is performed to sacrifice the periphery of the contact electrode 106 as shown in FIG. Layer 105 is removed. It is assumed that a space 110 is formed in part on the lower electrode 103. For example, the dry etching described above may be performed by heating the substrate to a predetermined temperature and exposing the sacrificial layer 105 to an ozone atmosphere in a heated state.

  As described above, since the first opening 108 is arranged in a region separated from the support member 104 by a predetermined distance, the space 110 is formed in a region separated from the support member 104 by a predetermined distance. Accordingly, in the movable space below the upper structure 107 surrounded by the support member 104, the sacrificial layer 105 remains between the space 110 and the support member 104, and the upper structure 107 remains with the support member 104. The layer 105 supports the interlayer insulating layer 102 (semiconductor substrate 101).

  Next, the substrate is immersed in a predetermined cleaning solution, and the cleaning solution is applied to the space 110. As the cleaning liquid, for example, an aqueous hydrogen fluoride solution can be used. By this cleaning treatment, it is possible to remove the polymer film and the particulate residue adhering to the surface of each electrode exposed in the space 110.

  At this time, the space 110 is formed in a narrow range around the contact electrode 106 as compared with the movable space surrounded by the support member 104, and most of the upper structure 107 is supported by the sacrificial layer 105. Therefore, deformation of the upper structure 107 due to the surface tension of the cleaning liquid during drying is suppressed. As a result, problems such as the contact electrode 106 and the lower electrode 103 sticking do not occur.

  After performing the cleaning process and the drying process as described above, the remaining sacrificial layer 105 is removed by dry etching through the second opening 109, and as shown in FIG. A fine structure having a space between the lower electrodes 103 is formed. In the dry etching in this step, the first opening 108 may be provided simultaneously with the second opening 109.

  According to the fine structure manufacturing method described above, a planar structure in which a sacrificial layer is sandwiched between two electrode structures is first produced, and a space is formed between the electrodes by partially removing the sacrificial layer. Since the electrode surface exposed in the space is cleaned by wet treatment, problems such as sticking of electrodes do not occur even when drying is performed after cleaning. Therefore, a contact-type switch is constituted by the two electrode structures, the electrode surface can be sufficiently cleaned, and good contact characteristics can be obtained.

  The above-described manufacturing method is particularly effective when a contact switch having a minute size is configured, but the application range is not limited to the contact switch. For example, the same effect can be obtained in other fine structures having a space between two electrode structures such as a capacitive pressure sensor, an acceleration sensor, a variable capacitance element, a movable mirror structure, a vibrator, and a mechanical filter. .

Hereinafter, the manufacturing method of the microstructure in the embodiment of the present invention will be described in more detail.
As shown in FIG. 2A, first, an interlayer insulating layer 102 made of, for example, silicon oxide is formed on a semiconductor substrate 101 made of, for example, silicon, and a metal pattern is formed thereon by plating. The necessary seed layer 203 is formed. The seed layer 203 may be formed by depositing titanium and depositing gold thereon, for example, by sputtering or vapor deposition. At this time, the thickness of titanium may be about 0.1 μm, and the thickness of gold may be about 0.1 μm.

  Next, a resist material is applied on the seed layer 203 to form a resist film, and exposure is performed using a mask having a desired pattern, so that an opening is formed at a desired location as shown in FIG. It is assumed that a resist pattern 204 provided with is formed. Further, the first metal pattern 205 is formed on the seed layer 203 exposed in the opening of the resist pattern 204 by plating. The thickness of the resist film at this time may be about 1 μm, and the plating thickness of the first metal pattern 205 may be about 0.3 μm. Thereafter, the resist pattern 204 is removed.

  Next, by the same process as the formation of the first metal pattern 205, as shown in FIG. 3C, a resist pattern 206 is formed, and the second metal pattern 207 is formed in the opening. Here, the second metal pattern 207 is formed to be thicker than the first metal pattern 205 by changing the film thickness of the metal pattern formed in the plating process. The resist film thickness at this time may be about 1 μm, and the plating thickness of the second metal pattern 207 may be about 0.6 μm. Thereafter, the resist pattern 206 is removed.

  Next, the seed layer 203 is removed by etching using the first metal pattern 205 and the second metal pattern 207 as a mask, so that the first metal pattern 205 and the second metal pattern 207 are interlayered as shown in FIG. The state is separated on the insulating layer 102. For example, gold on the seed layer 203 can be removed by wet etching using an etching solution composed of iodine, ammonium iodide, water, and ethanol. Further, titanium below the seed layer 203 can be removed by wet etching using a hydrogen fluoride aqueous solution.

  Next, as shown in FIG. 3E, the sacrificial layer 208 is formed in a state in which the space between the second metal patterns 207 is filled and the first metal patterns 205 are covered. For example, first, a photosensitive organic resin composed of PBO (polybenzoxazole) is applied to form a coating film, and the formed coating film is patterned by a known lithography technique, whereby the second metal pattern 207 is formed. The sacrificial layer 208 can be formed with the top surface exposed. In the patterning process of the sacrificial layer 208, as a pre-process, a pre-bake process at 120 ° C. is performed for about 4 minutes on the coating film, and a heat process at about 310 ° C. is performed after the patterning. For example, CRC8300 manufactured by Sumitomo Bakelite may be used as the organic resin.

  Next, as shown in FIG. 3F, a seed layer 209 composed of two layers of chromium and gold is formed on the sacrificial layer 208, and a contact electrode pattern 210 is formed thereon. The seed layer 209 may be formed by, for example, first depositing chromium and depositing gold thereon by sputtering or vapor deposition. At this time, the film thickness of chromium may be about 0.1 μm, and the film thickness of gold may be about 0.1 μm. The contact electrode pattern 210 may be formed by a selective plating method using a predetermined resist pattern, like the first metal pattern 205 and the like. At this time, the thickness of the resist pattern may be about 1 μm, and the plating thickness of the contact electrode pattern 210 may be about 0.3 μm.

  Next, the seed layer is removed by etching using the contact electrode pattern 210 as a mask. The gold on the upper layer of the seed layer 209 can be removed by wet etching using an etching solution composed of iodine, ammonium iodide, water, and ethanol. Further, chromium under the seed layer 209 can be removed by wet etching using an etchant composed of potassium ferricyanide, sodium hydroxide, and water.

  Thereafter, titanium is vapor-deposited and gold is vapor-deposited so that a seed layer 211 composed of two layers of titanium and gold is formed as shown in FIG. Subsequently, a desired resist pattern is formed by resist coating and pattern exposure, a plating film is selectively formed in the opening of the resist pattern, and then the resist pattern is removed, so that an upper portion of the second metal pattern 207 is formed. It is assumed that the third metal pattern 212 is formed on the seed layer 211 corresponding thereto. At this time, the thickness of the resist pattern may be about 1 μm, and the plating thickness of the third metal pattern 212 may be about 0.3 μm.

  Subsequently, the unnecessary seed layer 211 is selectively removed, and the contact electrode pattern 210 and the third metal pattern 212 are separated as shown in FIG. Here, the bottom of the contact electrode pattern 210 is covered with a sacrificial layer 208, and the first metal pattern 205 is not exposed. On the other hand, the third metal pattern 212 and the second metal pattern 207 are connected through the opening of the sacrificial layer 208.

  Next, in the same manner as the formation of the sacrificial layer 208, as shown in FIG. 4I, the space between the contact electrode pattern 210 and the third metal pattern 212 is filled, and the contact electrode pattern 210 and the third metal pattern are filled. The sacrificial layer 213 is formed in a state where the upper surface of 212 is exposed.

  Next, titanium is deposited on the sacrificial layer 213 by sputtering, vapor deposition, or the like, so that the titanium layer 214 is formed as shown in FIG. It is assumed that the inorganic insulating pattern 215 is formed on the upper titanium layer 214. The inorganic insulating pattern 215 can be formed by finely processing a silicon oxide film deposited by, for example, a sputtering method using a known photolithography technique and etching technique. The titanium layer 214 may be formed to a thickness of about 0.1 μm, and the inorganic insulating pattern 215 may be formed to a thickness of about 0.3 μm.

Next, the unnecessary titanium layer 214 is removed by selective etching using the inorganic insulating pattern 215 as a mask. For example, the titanium layer 214 may be selectively removed by wet etching using an aqueous hydrogen fluoride solution.
Next, as shown in FIG. 4K, the seed layer 216 is formed by the same process as the formation of the seed layer 211, and the fourth metal pattern 217 is formed by the same process as the formation of the third metal pattern 212. It is assumed that it is formed. At this time, the plating thickness of the fourth metal pattern 217 may be about 0.3 μm.

  Subsequently, after the unnecessary seed layer 216 is selectively removed, the sacrificial layer 213 is formed in the same manner as shown in FIG. 4L, so that the gap between the inorganic insulating pattern 215 and the fourth metal pattern 217 is increased. The sacrificial layer 218 is formed in a state where the upper surfaces of the inorganic insulating pattern 215 and the fourth metal pattern 217 are exposed.

  Next, a seed layer 219 composed of two layers of titanium and gold is formed on the sacrificial layer 218 by a method similar to the formation of the seed layer 216, and the fifth metal pattern 220 is formed thereon. Then, the unnecessary seed layer 219 is selectively removed (FIG. 4M). The fifth metal pattern 220 includes a plurality of first openings 221 in a region corresponding to the periphery of the contact electrode pattern 210, and includes a plurality of second openings 222 around these. The plating thickness of the fifth metal pattern 220 may be about 0.3 μm.

  Next, as shown in FIG. 4N, a resist pattern 223 having an opening in the region where the first opening 221 is formed is formed on the sacrificial layer 218 including the fifth metal pattern 220. State. For example, the resist pattern 223 can be formed by applying a predetermined resist material to form a resist film, and exposing and developing using a mask having a desired pattern. The second opening 222 is covered with a resist pattern 223. The resist pattern 223 only needs to be formed with a film thickness of about 20 μm.

  Next, ozone is applied to the sacrificial layer 208, the sacrificial layer 213, and the sacrificial layer 218 from the first opening 221 exposed at the opening of the resist pattern 223 using, for example, an ozone asher device, and FIG. As shown, a space 224 in which a part of the first metal pattern 205 is exposed is formed. Due to the space 224, a part of the contact electrode pattern 210 (seed layer 209) is also exposed.

  In this ozone treatment, the chromium constituting the contact electrode pattern 210 (seed layer 209) is also etched, and the gold layer constituting the seed layer 209 is exposed on the lower surface of the contact electrode pattern 210. Moreover, it will be in the state which the polymer film adhered to the surface of the exposed gold layer. On the other hand, the titanium constituting the fifth metal pattern 220 (seed layer 219) is not etched, and the lower surface of the fifth metal pattern 220 is in a state where a polymer film is attached to the titanium surface on the lower surface of the seed layer 219.

  Next, for example, the polymer film attached to the surface of each pattern exposed in the space 224 is removed by wet etching using an aqueous hydrogen fluoride solution. As a result of this etching (cleaning) process, titanium is etched, gold is exposed on the lower surface of the contact electrode pattern 210, and the lower surface of the fifth metal pattern 220 exposed in the space 224 as shown in FIG. The gold surface is exposed.

  Next, the resist pattern 223 is removed, and the remaining sacrificial layer 208, sacrificial layer 213, and sacrificial layer 218 are formed in a state where both the first opening 221 and the second opening 222 are opened, for example, Ozone is applied by the ozone asher device, and the sacrificial layer under the fifth metal pattern 220 is completely removed as shown in FIG. Here, since the gold is exposed on the lower surface of the contact electrode pattern 210 and the upper surface of the first metal pattern 205, the polymer film formed by the reaction between ozone and the sacrificial layer does not adhere, and the surface is formed by ozone treatment. Oxidation is also suppressed.

  By the manufacturing method described above, a space is formed between the upper structure 107 composed of the fifth metal pattern 220 and the lower electrode 103 composed of the first metal pattern 205, and the lower electrode 103 On the surface of the contact electrode 106 constituted by the contact electrode pattern 210, a fine structure which is a clean metal surface from which a polymer film or the like is removed is formed.

It is process drawing explaining the manufacturing method of the fine structure in embodiment of this invention. It is process drawing explaining in more detail about the manufacturing method of the microstructure in embodiment of this invention. It is process drawing explaining in more detail about the manufacturing method of the microstructure in embodiment of this invention. It is process drawing explaining in more detail about the manufacturing method of the microstructure in embodiment of this invention. It is process drawing explaining in more detail about the manufacturing method of the microstructure in embodiment of this invention. It is process drawing which demonstrates easily the manufacturing method of a certain fine structure conventionally.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 ... Semiconductor substrate, 102 ... Interlayer insulating layer, 103 ... Lower electrode (first electrode), 104 ... Support member, 105 ... Sacrificial layer, 106 ... Contact electrode (second electrode), 107 ... Upper structure, 108 ... First Opening 109, second opening 110, space.

Claims (4)

A first step in which a support member is fixed at a predetermined position on the semiconductor substrate, and a first electrode is fixed and formed at a predetermined distance from the support member in a movable space between the support members. When,
A second step in which a sacrificial layer is formed on the semiconductor substrate so as to fill the movable space and cover the first electrode;
A third step in which a second electrode is formed on the sacrificial layer corresponding to the upper portion of the first electrode;
A fourth step in which a plate-like upper structure having a plurality of openings in the region of the movable space is formed on the support member;
A part of the sacrificial layer through the opening disposed in the first region including a region where the first electrode forming region and the second electrode forming region overlap each other and spaced apart from the support member by a predetermined distance. To form a space in which a part of the first electrode and a part of the second electrode are exposed, and a part of the sacrificial layer remains between the space and the support member. Process,
A sixth step of supplying a predetermined cleaning liquid into the space through the opening disposed in the first region, and cleaning a portion exposed in the space with the cleaning liquid;
And a seventh step of removing the sacrificial layer remaining through the opening by dry etching after drying the cleaning solution. In the manufacturing method of the microstructure according to claim 1,
The sacrificial layer is made of an organic resin. In the manufacturing method of the microstructure according to claim 2,
The sacrifice layer is removed by dry etching using ozone. In the manufacturing method of the microstructure according to any one of claims 1 to 3,
In the fifth step,
Forming a mask pattern having an opening at a position corresponding to the first region on the upper structure, and removing a part of the sacrificial layer through the opening disposed in the first region; A method for producing a microstructure characterized by the above.

Images