JP2005322666A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein elements built up with a fine structure and having different configurations such as MEMS elements are monolithically mounted. <P>SOLUTION: The semiconductor device comprises: a semiconductor substrate 101 having an integrated circuit 160; a resonator 112, inductor element 113, varactor element 114, and switching element 115, which are arranged on the semiconductor substrate 101; and a container 120 placed on the semiconductor substrate 101 so as to cover all these components. The resonator 112, varactor element 114, and switching element 115 are micromachines (passive elements) having a variable beam supported on a support. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device used for communication, measurement, and the like, and a method for manufacturing the same, and more particularly, to a semiconductor device in which elements such as inductors and antenna elements, MEMS elements, and the like are monolithically mounted, and a method for manufacturing the same. About.

  Since “KEPeterson,“ Silicon as a Mechanical Material ”, Proceedings of the IEEE, Vol.70, No.5, May, pp420-457,1982”, a micromachine using a silicon substrate was proposed. A lot of research and development has been done. One of the development trends in a technology related to a conventional micromachine is a structure and a manufacturing method of a MEMS element (Micro Electro Mechanical System) which is a micromachine. Further, in consideration of mounting, a technique for adding a bonding technique to the structure and manufacturing method of the MEMS element and sealing and realizing a micromachine has been developed.

  The MEMS element includes a switch element, a variable capacitor, a variable inductor, a filter in which a capacitor and an inductor are combined, and the like. For example, a cantilever arm type switching element such as a micro electromechanical switch of Rockwell International has been proposed. Various proposals have been made regarding the manufacture of cantilever arm type switch elements (see Patent Documents 1 and 2).

  As shown in FIG. 8, this switch element includes an anchor structure 802 on a semiconductor substrate 801, and a cantilever arm 803 whose end is supported by the anchor structure 802 can move up and down with the anchor structure 802 as a fulcrum. It is what is said. A contact 804 is provided on the substrate side of the other end of the cantilever arm 803, and a signal line 805 is disposed on the semiconductor substrate 801 facing the contact 804.

  Further, an upper electrode 806 is provided on the upper portion of the cantilever arm 803, and a predetermined voltage is applied to the lower electrode 807 provided on the semiconductor substrate 801 side to control the operation of the cantilever arm 803. . For example, by applying a voltage between the upper electrode 806 and the lower electrode 807, when the cantilever arm 803 is pulled toward the semiconductor substrate 801, the switching operation in which the contact 804 and the signal wiring 805 come into contact can be controlled.

As a variable capacitor, a variable capacitor has been proposed in which a space is provided in a substrate, a thin metal film is used as a counter electrode, and the capacitance is variable by moving the electrode (see Patent Document 3). In addition, a variable capacitor in which the counter electrode is divided into movable thin film bodies and a drive positive electrode and a signal electrode are provided has been proposed (see Patent Document 4).
There has also been proposed an electrostatic micro relay in which a substrate on which electrodes for control and the like are formed and a substrate on which a movable part is formed are individually manufactured, and these are bonded together to form a movable part by etching. (Refer nonpatent literature 1).

In the conventional MEMS element described above, the movable part is finally formed.
As a method for manufacturing the movable portion of the MEMS element, a sacrificial film is removed after a structure serving as a movable portion is formed on a sacrificial film provided on a substrate, and a space is formed between the movable portion and the substrate. There is a method for forming a formed state. In addition, as a method for manufacturing the movable part, there is a method in which the movable part and a part facing the movable part are individually manufactured and bonded together.

In any case, there is a risk of damage to the movable part due to vibration applied to the movable part in the stage of cutting out the element for mounting after the MEMS element is created or in handling the cut-out element. In other words, in the MEMS element, it is very difficult to mount a minute movable part without damaging it. A problem in mounting a MEMS element having a fine movable part that is easily damaged is not considered in the above-described conventional technology. Therefore, conventionally, the size of parts is large, which has been an obstacle for a thin and compact module.
In addition, it is difficult to produce a plurality of elements monolithically on a single substrate, which makes it difficult to apply them to mass production, resulting in an increase in cost. Invite.

By the way, there is a method in which the movable part of the micromachine is protected with a protective film such as a resist, and after the mounting process and the pasting process, the protective film is removed to prevent breakage of the movable part. However, the use of a protective film makes it possible to suppress damage during mounting or the like, but the movable part is not protected in actual use. At the stage of actual use, the element part including the movable part needs to be sealed.
In response to such a demand, for example, a technique has been proposed in which a space is formed in a glass substrate, a SAW element is built in the formed space, and a new glass substrate is bonded to the SAW chip to form a SAW chip (non-contained) Patent Document 2).

  In addition, after the MEMS structure is fabricated, another substrate (sealing chip) for sealing is prepared, and a BCB film is formed as a frame pattern on the sealing chip so as to surround the periphery of the MEMS element. In addition, a technique for attaching and sealing a MEMS element with a flip-flop has also been proposed (see Non-Patent Document 3). As a similar technique, a method of attaching a cover called a micropackage on a MEMS element has also been proposed (see Non-Patent Document 4).

  However, these methods are techniques that are difficult to apply when integrating a plurality of MEMS elements because the dimensions of the MEMS elements and the number of monolithic elements that can be arranged are limited. Also, with the method described above, it is impossible to monolithically mount different MEMS elements.

  On the other hand, a concept of mounting a plurality of micromachines on the same substrate has been proposed. For example, a proposal has been made regarding a single-chip transceiver for the purpose of reducing the cost, size and performance of a transceiver in wireless technology (see Non-Patent Document 5). There is also a proposal for a single chip using MEMS for low power consumption (see Non-Patent Document 6).

The applicant has not yet found prior art documents related to the present invention by the time of filing other than the prior art documents specified by the prior art document information described in this specification.
JP 2000-188049 A JP 2000-188050 A JP-A-5-074655 Japanese Patent Laid-Open No. 9-082569 M. Sakata, et.al., "Micromachined relay which utilizes single crystal silicon electrostatic actuator", 12th IEEE International Conference on Microelectromechanical Systems, 1999, pp.21-24. D.Ando, "Glass direct bonding technology for hermetic seal package", 10th IEEE International Conference on Microelectromechanical Systems, 1997, pp.186-190. A. Jourdain, "Investigation of the hermeticity of BCB-sealed cavities for housing RF MEMS device", 15th IEEE International Conference on Microelectromechanical Systems, 2002, pp.677-680. L. Lin, "MEMS post-packaging by localized heating and bonding", IEEE Trans. Advanced Packaging, Vol. 23, pp.608-616, 2000. Clark T.-C. Nguyen, "Micromachined Devices for Wireless Communications", IEEE Proceeding, vol.86, No.8, pp.1756-1768, Aug. 1998. K. Najafi, "Low Power Micromachined Microsystem", ISLPED 2003, pp.1-8.

However, each of the above-described technologies has a unique manufacturing process corresponding to each MEMS element, and a plurality of elements composed of different forms of MEMS elements and fine structures such as inductors and antenna elements are monolithically mounted. No proposal has been made for a single chip.
The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor device monolithically mounted with different forms of elements composed of fine structures such as MEMS elements. And

  A semiconductor device according to the present invention includes a container including a ceiling wall formed on a semiconductor substrate and facing the surface of the semiconductor substrate, a side wall that supports the ceiling wall on the semiconductor substrate, and an upper surface of the ceiling wall. At least a first element formed and a second element formed on a semiconductor substrate inside the container are provided, and the second element is sealed inside the container. The second element is, for example, a MEMS element that includes at least a movable movable beam supported on a support portion and an electrode disposed under the movable beam.

  The semiconductor device may include a support structure that supports the ceiling wall on the semiconductor substrate inside the container. The support structure is a partition formed inside the container and is divided by the partition. A plurality of second elements formed on the semiconductor substrate in each space inside the container may be provided.

The semiconductor device may include a semiconductor integrated circuit including an active circuit formed on the semiconductor substrate and connected to the second element. The second element includes an interlayer insulating layer on the semiconductor integrated circuit. It may be arranged via.
Note that the second element is a passive element, for example, at least one of a switch, a variable capacitance element, and a resonator, and the first element is at least one of an inductor and an antenna element.

  The method for manufacturing a semiconductor device according to the present invention includes a first step in which a seed layer is formed on a semiconductor substrate, a plurality of first metal patterns on the seed layer, and a plurality higher than the first metal pattern. A second step in which the second metal pattern is formed, a third step in which the seed layer is selectively etched away using the first metal pattern and the second metal pattern as a mask, and the upper surface of the second metal pattern A fourth step in which the lower sacrificial film is formed in a state where the metal layer is exposed, a plurality of third metal patterns disposed on some of the second metal patterns, and over the other second metal patterns A fifth step in which a fourth metal pattern having the same height as the third metal pattern is formed on the lower sacrificial film; and a fifth metal pattern disposed on the third metal pattern Is formed A sixth step, a seventh step in which the upper sacrificial film is formed on the lower sacrificial film with the upper surface of the fifth metal pattern exposed, and a plurality of openings on the upper sacrificial film. An eighth step in which the provided metal layer is formed; a ninth step in which the upper sacrificial film and the lower sacrificial film are removed through the opening of the metal layer; A tenth step in which a wall is formed and an eleventh step in which a first element is formed on the upper surface of the ceiling wall, and a part of the fifth metal pattern and the third metal pattern below the fifth metal pattern And the second metal pattern forms a side wall for supporting the ceiling wall on the semiconductor substrate, a container is formed on the semiconductor substrate by the side wall and the ceiling wall, and is sealed inside the container, Connect to 1 metal pattern and 4th metal pattern By the second metal pattern is obtained by such a state in which a plurality of second elements are formed.

  As described above, according to the present invention, the second element such as the MEMS element is disposed in the container provided on the semiconductor substrate, and the first element such as the inductor is disposed on the upper surface of the container. Therefore, there is an excellent effect that a semiconductor device in which elements of different forms composed of fine structures are monolithically mounted can be easily obtained.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
1A and 1B are a schematic perspective view (a) and a cross-sectional view (b) showing a configuration example of a semiconductor device according to an embodiment of the present invention. Note that FIG. 1A and FIG. 1B do not completely correspond.
A semiconductor device shown in FIG. 1 includes a semiconductor substrate 101 including an integrated circuit 160, a resonator (second element) 112, an inductor element (first element) 113, a variable capacitance element (on the semiconductor substrate 101). A second element 114, a switch element (second element) 115, and a container 120 disposed on the semiconductor substrate 101 so as to cover them are configured. The resonator 112, the variable capacitance element 114, and the switch element 115 are micromachines (passive elements) including a movable movable beam supported on a support portion.

The container 120 includes a ceiling wall 121 that faces the upper surface of the semiconductor substrate 101, and a side wall 122 that surrounds the container 120. Further, the interior of the container 120 is separated into respective rooms by a partition wall 123, and a resonator 112, a variable capacitance element 114, and a switch element 115 are arranged in each room separated by the partition wall 123.
Each element is disposed on the semiconductor substrate 101 via the interlayer insulating layer 102 and is connected to the integrated circuit 160 by wiring. The integrated circuit 160 includes a drive circuit that drives each element, a signal processing circuit, and the like. Therefore, the semiconductor device of FIG. 1 is a MEMS chip.

  For example, the side wall 122 and the partition wall 123 are made of metal. In this case, each of the above-described elements that are micromachines is surrounded by a metal wall, shielded against electrical noise, and is unlikely to malfunction. In FIG. 1, the container 120 is a rectangular parallelepiped. However, the present invention is not limited to this, and it goes without saying that the side wall may be formed of a curved surface, such as being formed in a cylindrical shape. Further, the ceiling wall 121 may be supported on the semiconductor substrate 101 by a support column or the like inside the side wall 122. In the case of the configuration shown in FIG. 1, the partition wall 123 functions as the support pillar.

  The semiconductor device shown in FIG. 1 includes a pad terminal 106 on a part of a semiconductor substrate 101, like a normal semiconductor integrated circuit device, and has a predetermined function by connecting the pad terminal 106 and an external system. To express. Each MEMS element (second element) is controlled by an active circuit such as a drive circuit constituting the integrated circuit 160, and can simultaneously control each MEMS element to a desired state. Further, since the inductor element 113 is monolithically mounted in the semiconductor device shown in FIG. 1, various filters can be formed.

  Next, each element will be described. First, as shown in FIG. 2, the resonator 112 includes a drive electrode (support portion) 201, a movable beam 202, an input electrode 203, and an output electrode 204. The movable beam 202 is supported at both ends by a drive electrode 201 and is driven by a drive signal output from the drive circuit 161 to move. The input electrode 203 and the output electrode 204 are connected to the signal processing circuit 162.

  As shown in FIG. 3, the inductor element 113 is formed on the upper surface of the ceiling wall 121 and is disposed outside the container. The inductor element 113 is connected to the wiring portions 311 and 312 at the terminals 301 and 302, and is connected to the signal processing circuit 163 via the wiring portions 311 and 312. Since a space due to the container exists below the inductor element 113, a desired electrical specification can be obtained with less dielectric loss.

  As shown in FIG. 4, the variable capacitance element 114 includes a movable beam 401, a support electrode (support portion) 402, a drive electrode 403, and a counter electrode 404. The movable beam 401 includes a capacitive electrode portion 401a above the counter electrode 404 in the center, and a movable electrode portion 401b above two drive electrodes 403 provided with the counter electrode 404 therebetween. The drive electrode 403 is connected to the drive circuit 164. A signal processing circuit 165 is connected to the movable beam 401 through the support electrode 402 and is connected to the counter electrode 404. When the movable beam 401 is displaced (moved) in the direction of the drive electrode 403, the interval between the capacitive electrode portion 401a and the counter electrode 404 is displaced, and the capacitance is changed.

  As shown in FIG. 5, the switch element 115 includes a movable beam 501, an input electrode (support portion) 502, a drive electrode 503, and a connection electrode 504. The central part of the movable beam 501 is supported by the input electrode 502. In addition, the movable beam 501 includes a movable electrode portion 501 a in a portion that hits the upper portion of the drive electrode 503. The movable beam 501 includes output electrode portions 501b at both ends. A contact point 514 is formed on the upper surface of the connection electrode 504.

  When a drive signal is applied to the drive electrode 503 from the drive circuit 166, the movable electrode portion 501a is attracted (moved) in the direction of the drive electrode 503. In conjunction with this, the output electrode portion 501b is also displaced in the direction of the connection electrode 504, and the lower surface of the output electrode portion 501b contacts the contact point 514. The connection electrode 504 and the input electrode 502 are connected to the signal processing circuit 167, and the input electrode 502 is electrically connected to the movable beam 501.

Next, an example of a method for manufacturing the semiconductor device described above will be described with reference to FIGS.
First, an integrated circuit 160 composed of, for example, a plurality of MOS transistors, resistors, wirings, and the like is formed on a semiconductor substrate 101 made of, for example, silicon. Then, as shown in FIG. An interlayer insulating layer 102 is formed, contact holes are formed at predetermined positions of the interlayer insulating layer 102, and a seed layer 601 is formed thereon.

  The seed layer 601 may be formed by first depositing titanium and depositing gold on the seed layer by sputtering or vapor deposition. The seed layer 601 is formed including the inside of the contact hole. Note that the thickness of titanium may be about 0.1 μm, and the thickness of gold may be about 0.1 μm.

  Next, a resist pattern having openings at desired locations is formed on the seed layer 601, and a gold pattern is formed by plating on the seed layer 601 exposed at the openings of the resist pattern. By removing the post-resist pattern, the metal pattern (first metal pattern) 602 and the metal pattern (second metal pattern) 603 are formed as shown in FIG. 6B. The metal pattern 602 and the metal pattern 603 having different heights are formed by performing the resist pattern formation, plating, and resist pattern removal processes twice.

  For example, the film thickness of the first resist pattern is about 1 μm, and the metal pattern 602 having a height of 0.3 μm is formed by forming the plating to a thickness of about 0.3 μm. Similarly, the thickness of the resist pattern for the second time is about 1 μm, and the metal pattern 603 having a height of 0.4 μm is formed by forming the plating to a thickness of about 0.4 μm.

  Next, the seed layer 601 is removed by etching using the metal patterns 602 and 603 as a mask, so that the metal patterns 602 and 603 are separated from each other on the interlayer insulating layer 102 as shown in FIG. For example, the upper gold constituting the seed layer 601 can be removed by wet etching using an etchant composed of iodine, ammonium iodide, water, and ethanol. For example, the etching rate is about 0.05 μm per minute. Further, the lower layer titanium can be etched with an etchant made of HF.

  Next, as shown in FIG. 6D, a resist pattern 604 having an opening is formed on a part of a desired metal pattern 602, and the metal exposed to the opening by electroless plating. A contact point 514 is formed by forming a 0.3 μm Ru film on the upper surface of the pattern 602. The metal pattern 602 provided with the contact 514 becomes the connection electrode 504 shown in FIG. Note that platinum or the like may be used as the contact material.

  Next, after removing the resist pattern 604, as shown in FIG. 6E, the lower sacrificial film 605 is formed with the upper surface of the metal pattern 603 exposed. The metal pattern 602 is covered with a lower sacrificial film 605. For example, the lower sacrificial film 605 can be formed by applying a photosensitive organic resin composed of polybenzoxazole and patterning the applied organic resin film by a known photolithography technique. In the patterning process, pre-baking at 120 ° C. is performed for about 4 minutes as a pre-process. In addition, after patterning, heat treatment at about 310 ° C. is performed. As the organic resin, “CRC8300” manufactured by Sumitomo Bakelite Co., Ltd. can be used.

  Next, a seed layer (not shown) is formed on the lower sacrificial film 605. The seed layer is the same as the seed layer 601 shown in FIG. Next, a resist pattern having an upper portion of a predetermined metal pattern 603 is formed on the seed layer, and a gold pattern is formed on the seed layer exposed at the opening of the resist pattern by a plating method. By removing the pattern, as shown in FIG. 6F, a metal pattern (third metal pattern) 606, a metal pattern (fourth metal pattern) 607, a metal pattern (fourth metal pattern) 608, a metal pattern ( A fourth metal pattern) 609 is formed.

For example, the thickness of the resist pattern is about 1 μm, and the metal pattern 606, 607, 608, 609 having a height of 0.3 μm is formed by forming the plating to a thickness of about 0.3 μm. The formation of these metal patterns is the same as the formation of the metal patterns in FIGS. 6 (a) to 6 (b).
The metal pattern 607 becomes the movable beam 202 shown in FIG. 2, the metal pattern 608 becomes the movable beam 401 shown in FIG. 4, and the metal pattern 609 becomes the movable beam 501 shown in FIG.

  Next, a resist pattern in which the upper part of the metal pattern 606 is opened is formed, a gold pattern is formed on the metal pattern 606 exposed at the opening of the resist pattern by a plating method, and then the resist pattern is removed, As shown in FIG. 6G, a metal pattern (fifth metal pattern) 610 is formed on the metal pattern 606. For example, the thickness of the resist pattern is about 1 μm, and the metal pattern 610 having a height of 0.4 μm is formed by forming the plating to a thickness of about 0.4 μm. Thereafter, using the metal patterns 606, 610 and the metal patterns 607, 608, 609 as masks, a seed layer (not shown) is removed by etching. The removal of the seed layer is the same as the etching removal of the seed layer 601 described above.

  Next, as shown in FIG. 7H, the upper sacrificial film 611 is formed in a state where the upper surface of the metal pattern 610 is exposed. The metal patterns 607, 608, and 609 are covered with the upper sacrificial film 611. For example, the upper sacrificial film 611 can be formed by applying a photosensitive organic resin composed of polybenzoxazole and patterning the applied organic resin film by a known photolithography technique. In the patterning process, pre-baking at 120 ° C. is performed for about 4 minutes as a pre-process. In addition, after patterning, heat treatment at about 310 ° C. is performed. As the organic resin, “CRC8300” manufactured by Sumitomo Bakelite Co., Ltd. can be used.

  Next, a seed layer made of, for example, gold having a thickness of about 0.1 μm is formed on the upper surface of the upper sacrificial film 611 by a sputtering method or the like, and a resist pattern having a lattice-like opening is formed thereon. By forming a gold pattern in the opening of the substrate by a plating method and removing the resist pattern, a mesh-like (lattice-like) metal layer 612 is formed as shown in FIG. For example, the metal layer 612 may have a thickness of about 1 μm.

  Next, for example, ozone is applied to the lower sacrificial film 605 and the upper sacrificial film 611 from the opening of the metal layer 612 using an ozone asher device, and the lower sacrificial film 605 and the upper sacrificial film 611 are removed, thereby removing FIG. As shown in (j), a space is formed below the metal layer 612. In FIG. 7 (j), the side wall 122 and the partition wall 123 shown in FIG. 1 are formed by a part of the metal patterns 610, 606, 603, and the other part of the metal patterns 610, 606, 603 in FIG. The wiring parts 311 and 312 shown are configured.

  In addition, a resonator 112, a variable capacitor 114, and a switch element 115 are formed below the metal layer 612. The distance (distance between the contacts) between the movable beam of these elements and the lower electrode is about 0.1 μm. The interval can be adjusted by the difference in height between the metal pattern 602 and the metal pattern 603 shown in FIG.

  Next, the metal layer was formed by the STP method ("A Sealing Technique for Stacking MEMS on LSI Using Spin-Coating Film Transfer and Hot Pressing", Jpn. J. Appl. Phys. Bol. 42, pp.2462-2467, 2003). An insulating film is attached to the upper surface of 612, and a through hole is formed in a part of the attached insulating film, so that the ceiling wall 121 is formed as shown in FIG. As the insulating film to be attached, for example, a film made of an organic material having a thickness of about 1.0 μm may be used. The ceiling wall 121 may be made of a conductive material. In addition, the film to be the ceiling wall 121 may be formed by other methods without being limited to the STP method.

The ceiling wall 121 can also be formed by applying a resin on the metal layer 612, or may be formed by depositing an insulating film by a chemical vapor deposition method. Moreover, you may comprise the ceiling wall 121 from a metal.
Finally, terminals 301 and 302 are formed in the through holes formed in the ceiling wall 121, and a wiring pattern connected to the terminals 301 and 302 is formed, so that the upper surface of the ceiling wall 121 is formed as shown in FIG. It is assumed that the inductor element 113 is formed at a predetermined location.

  By the manufacturing method described above, the resonator 112, the variable capacitance element 114, and the switch element 115 are sealed in a container including the ceiling wall 121 and a side wall constituted by a part of the metal patterns 610, 606, and 603. State is obtained. Moreover, according to the manufacturing method mentioned above, the state by which each element was isolate | separated into each room by the partition comprised by a part of metal pattern 610,606,603 is obtained.

In the above description, the inductor element 113 is provided on the ceiling wall 121. However, the present invention is not limited to this. An antenna element can be formed on the ceiling wall 121.
In the above description, the MEMS element is provided inside the container formed on the semiconductor substrate. However, the present invention is not limited to this. A passive element composed of a fine structure that does not include a movable part may be sealed inside the container. By disposing inside the container, the element can be shielded from various influences such as electromagnetic waves.

1A is a schematic perspective view illustrating a configuration example of a semiconductor device according to an embodiment of the present invention, and FIG. FIG. 2A is a plan view schematically showing a configuration example of a resonator 112, and FIG. FIG. 2A is a plan view schematically showing a configuration example of an inductor element 113, and FIG. FIG. 2A is a plan view schematically showing a configuration example of a variable capacitance element 114, and FIG. FIG. 2A is a plan view schematically showing a configuration example of a switch element 115, and FIG. It is process drawing explaining the example of the manufacturing method of the semiconductor device in embodiment of this invention. It is process drawing explaining the example of the manufacturing method of the semiconductor device in embodiment of this invention. It is typical sectional drawing which shows the structural example of the switch element which is an example of the conventional micromachine.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 ... Semiconductor substrate, 102 ... Interlayer insulating layer, 106 ... Pad terminal, 112 ... Resonator, 113 ... Inductor element, 114 ... Variable capacitance element, 115 ... Switch element, 120 ... Container, 121 ... Ceiling wall, 122 ... Side wall, 123: partition walls, 160: integrated circuits.

Claims (11)

A container having a ceiling wall formed on a semiconductor substrate and facing a surface of the semiconductor substrate; and a side wall that supports the ceiling wall on the semiconductor substrate;
A first element formed on the top surface of the ceiling wall;
And at least a second element formed on the semiconductor substrate inside the container,
The semiconductor device, wherein the second element is sealed inside the container. The semiconductor device according to claim 1,
The second element includes at least a movable movable beam supported on a support portion and an electrode disposed under the movable beam. The semiconductor device according to claim 1 or 2,
A semiconductor device comprising: a support structure that supports the ceiling wall on the semiconductor substrate inside the container. The semiconductor device according to claim 3.
The support structure is a partition wall formed inside the container,
A semiconductor device comprising a plurality of the second elements formed on the semiconductor substrate in each space inside the container divided by the partition. The semiconductor device according to any one of claims 1 to 4,
A semiconductor device comprising a semiconductor integrated circuit including an active circuit formed on the semiconductor substrate and connected to the second element. The semiconductor device according to claim 5.
The second element is disposed on the semiconductor integrated circuit via an interlayer insulating layer. A semiconductor device, wherein: The semiconductor device according to any one of claims 1 to 6,
The semiconductor device, wherein the first element is at least one of an inductor and an antenna element. The semiconductor device according to any one of claims 1 to 6,
The semiconductor device, wherein the second element is a passive element. The semiconductor device according to claim 8.
The semiconductor device, wherein the second element is at least one of a switch, a variable capacitance element, and a resonator. A first step in which a seed layer is formed on a semiconductor substrate;
A second step in which a plurality of first metal patterns and a plurality of second metal patterns higher than the first metal pattern are formed on the seed layer;
A third step of selectively etching away the seed layer using the first metal pattern and the second metal pattern as a mask;
A fourth step of forming a lower sacrificial film in a state in which the upper surface of the second metal pattern is exposed;
A plurality of third metal patterns disposed on some of the second metal patterns, and a fourth metal pattern disposed on the other second metal patterns and having the same height as the third metal patterns. A fifth step of forming a state formed on the lower sacrificial film;
A sixth step in which a fifth metal pattern disposed on the third metal pattern is formed;
A seventh step in which an upper sacrificial film is formed on the lower sacrificial film with the upper surface of the fifth metal pattern exposed;
An eighth step in which a metal layer having a plurality of openings is formed on the upper sacrificial film;
A ninth step of removing the upper sacrificial film and the lower sacrificial film through the opening of the metal layer;
A tenth step in which a ceiling wall is formed on the metal layer;
And an eleventh step in which a first element is formed on the upper surface of the ceiling wall,
Side walls that support the ceiling wall on the semiconductor substrate are formed by a part of the fifth metal pattern and the third metal pattern and the second metal pattern below the fifth metal pattern,
A container is formed on the semiconductor substrate by the side wall and the ceiling wall,
A plurality of second elements are formed by the first metal pattern, the fourth metal pattern, and the second metal pattern connected to the first metal pattern in a state of being sealed inside the container, A method for manufacturing a semiconductor device. The method of manufacturing a semiconductor device according to claim 10.
The said ceiling wall is formed by bonding together with the said metal layer. The manufacturing method of the semiconductor device characterized by the above-mentioned.

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