JP2006049498A - Method of manufacturing connecting terminal - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a connecting terminal which can improve the working accuracy of the connecting terminal and improve the productivity of the connecting terminal in relation to the method of manufacturing the connecting terminal, which electrically connects between an inspection device for inspecting the electrical characteristic of a semiconductor element and the semiconductor element or between the semiconductor element and a substrate. <P>SOLUTION: The connecting terminal 50 is formed by coating a mold 75 having a plurality of recesses 74 with a resist film 80, exposing the mold 75 by using laser drawing, forming an opening 83 corresponding to the shape of the connecting terminal 50 in the resist film 80, and precipitating a plating film on the mold 75 exposed to the opening 83 by electrocasting. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a connection terminal, and in particular, a connection terminal for electrically connecting an inspection apparatus for inspecting electrical characteristics of a semiconductor element and a semiconductor element, or between a semiconductor element and a substrate. It relates to a manufacturing method.

  Generally, when a semiconductor element is mounted on a substrate, a connection terminal is provided on either the substrate or the semiconductor element, and the substrate and the semiconductor element are electrically connected by the connection terminal. At this time, if there is a difference in thermal expansion coefficient between the substrate and the semiconductor element, and a temperature change occurs, a connection portion between the substrate and the connection terminal and / or between the semiconductor element and the connection terminal. The stress concentrates on the surface, and the reliability of the connection portion decreases.

  For this reason, the connection terminal may have a spring property in order to relieve stress caused by the difference in thermal expansion coefficient. Examples of such connection terminals include S-shaped wire connection terminals and cantilever-shaped cantilever connection terminals. In addition, these spring-connected connection terminals are also provided in an inspection apparatus that inspects the electrical characteristics of a semiconductor element (for example, a probe card that is a tool for an inspection apparatus). With this trend, it is desired to accurately form a connection terminal having a fine shape.

  With reference to FIG.1 and FIG.2, the manufacturing method of the wire-shaped connection terminal 16 is demonstrated. 1 and 2 are diagrams showing a manufacturing process of a conventional wire connection terminal. First, as shown in FIG. 1, S-shaped gold wires 13 are sequentially formed on each pad 12 provided on the substrate 11 using wire bonding 15. Thereafter, as shown in FIG. 2, a wire-like connection terminal 16 is formed by providing a Ni-based plating film 14 so as to cover the gold wire 13. The Ni-based plating film 14 is for making the wire-like connection terminals 16 moderately hard and imparting spring properties to the wire-like connection terminals 16 (see, for example, Patent Document 1).

  By connecting the substrate 11 and the semiconductor element (not shown) by the wire-like connection terminal 16 having such a configuration, the stress generated by the difference in thermal expansion coefficient between the substrate 11 and the semiconductor element is absorbed. be able to.

  Next, a conventional method for manufacturing the cantilever connection terminal 30 will be described with reference to FIGS. 3 to 8 are views showing a manufacturing process of a conventional cantilever connection terminal. First, as shown in FIG. 3, a resist film 23 having an opening 23 </ b> A is formed on a substrate 21 having a pad 22. Next, as shown in FIG. 4, a resist film 24 having an opening 24 </ b> A that exposes the opening 23 </ b> A is formed on the resist film 23.

Subsequently, as shown in FIG. 5, a plating film 26 is provided in the openings 23 </ b> A and 24 </ b> A, and the plating film 26 and the pad 22 are electrically connected. Next, as shown in FIG. 6, a resist film 27 having an opening 27A for exposing a part of the plating film 26 is formed on the structure shown in FIG. Next, as shown in FIG. 7, a plating film 28 is provided in the opening 27A. The plating film 28 is a portion connected to a semiconductor element (not shown). Thereafter, as shown in FIG. 8, the resist films 23, 24, and 27 are removed with a resist stripping solution, thereby forming a cantilever-like cantilever connection terminal 30 having a spring property (for example, Patent Documents). 2).
JP 2001-077250 A Japanese Patent Laid-Open No. 2003-232809

  However, in the case of the wire-like connection terminal 16, since the S-shaped gold wire 13 is sequentially formed on each pad 12 by the wire bonding 15, the shape of each gold wire 13 varies, and the wire-like connection terminal 16. In the case of connecting the substrate 11 and the semiconductor element via the wire or connecting the semiconductor element and the inspection device via the wire-like connection terminal 16, there is a problem that the reliability of the electrical connection is lowered. It was. Further, since the S-shaped gold wire 13 is sequentially formed on each pad 12, there is a problem that the productivity of the wire-like connection terminal 16 is lowered.

  Further, in the case of the cantilever connection terminal 30, a plurality of cantilever connection terminals 30 can be formed with high accuracy at a time. The process of forming the three-layer resist films 23, 24, and 27 having a portion and the plating film forming process of two times are necessary, and there is a problem that the number of processes is increased and productivity is lowered. .

  Then, this invention is made in view of the problem mentioned above, and it aims at providing the manufacturing method of the connecting terminal which can improve the processing precision of a connecting terminal and can improve the productivity of a connecting terminal. To do.

  In order to solve the above-mentioned problems, the present invention is characterized by the following measures.

  According to the first aspect of the present invention, in the method of manufacturing a connection terminal having a step and having a spring property, a resist film is formed by applying a resist film to a mold having a plurality of recesses corresponding to the step of the connection terminal. A step of exposing the mold to the resist film and forming an opening corresponding to the shape of the connection terminal; and a plating film on the mold exposed to the opening by electroforming This can be solved by a method for manufacturing a connection terminal, characterized in that it has a plating film forming step of forming a film.

  According to the above invention, a resist film is applied to a mold having a recess corresponding to the step of the connection terminal, the mold is exposed, and an opening corresponding to the shape of the connection terminal is formed in the resist film. By forming a plating film to be a connection terminal on the mold exposed in the opening by casting, the processing accuracy of the connection terminal can be improved and the number of processes can be reduced compared to the conventional method, thereby improving the productivity of the connection terminal. Can be improved.

  The invention according to claim 2 can be solved by the method of manufacturing the connection terminal according to claim 1, wherein the recess has a plurality of grooves having different depths.

  According to the said invention, a level | step difference can be provided in a connection terminal by setting it as the structure which has the groove part from which several depths differ in a recessed part.

  According to a third aspect of the invention, the opening can be solved by the method for manufacturing a connection terminal according to the first or second aspect, wherein the opening is formed by a laser drawing method.

  According to the said invention, an opening part can be accurately formed with respect to the resist film provided in the recessed part which has the groove part from which several depth differs.

  According to a fourth aspect of the present invention, the opening can be solved by the method for manufacturing a connection terminal according to the first or second aspect, wherein the opening is formed by a photo process by exposure and development.

  According to the above invention, it is possible to form the openings with high accuracy collectively for the resist film provided in the plurality of recesses.

  ADVANTAGE OF THE INVENTION According to this invention, while being able to improve the processing precision of a connection terminal, the manufacturing method of the connection terminal which can improve the productivity of a connection terminal can be provided.

Next, embodiments of the present invention will be described with reference to the drawings.
(First embodiment)
First, the connection terminal 50 according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 9 is a side view of the connection terminal according to the first embodiment of the present invention, and FIG. 10 is a plan view of the connection terminal shown in FIG. In FIG. 9, the X and X directions indicate the surface directions of the connection surfaces 55A and 56A, and the Z and Z directions are directions orthogonal to the X and X directions (extending directions of the support portions 53 and 54). Is shown.

  The connection terminal 50 has steps D1 and D2, and is roughly configured to include a connection terminal main body 51, a substrate terminal portion 55, and a semiconductor element terminal portion 56. The connection terminal main body 51 is formed in a crank shape and includes a plate portion 52 and support portions 53 and 54. The plate part 52 is disposed so as to be parallel to the X and X directions. The plate portion 52 is configured to have a desired length L2.

  The support portion 54 is provided at one end of the plate portion 52 so as to be orthogonal to the plate portion 52. The support portion 54 is for supporting the space between the plate portion 52 and the substrate terminal portion 55. A step D <b> 1 is provided between the plate portion 52 and the substrate terminal portion 55 by the support portion 54. The step D1 can be appropriately selected within a range of 200 μm to 500 μm, for example.

  The support portion 56 is provided at the other end of the plate portion 52 so as to be orthogonal to the plate portion 52. The support portion 56 is for supporting the space between the plate portion 52 and the semiconductor element terminal portion 56. A step D <b> 2 is provided between the plate portion 52 and the semiconductor element terminal portion 56 by the support portion 56. The step D2 can be appropriately selected within a range of 100 μm to 250 μm, for example.

  The board terminal portion 55 has a connection surface 55A to which the board 65 (see FIG. 11) is connected. The board terminal portion 55 is disposed on the support portion 54 so that the connection surface 55A is parallel to the X and X directions. The board terminal portion 55 is set to have a desired length L3.

  The semiconductor element terminal portion 56 has a connection surface 56A to which the semiconductor element 60 (see FIG. 11) is connected. The semiconductor element terminal portion 56 is disposed on the support portion 53 so that the connection surface 56A is parallel to the X and X directions. The semiconductor element terminal portion 56 is set to have a desired length L1.

  The thickness M1 of the connection terminal 50 configured as described above can be appropriately selected within a range of 10 μm to 100 μm, for example. Further, the width W1 of the connection terminal 50 can be appropriately selected within a range of 30 μm to 100 μm, for example. The connection terminal 50 is composed of a plating film formed by electroforming. As a material for the plating film, for example, nickel, copper, gold, silver, a Ni-based alloy, or the like can be used.

  FIG. 11 is a cross-sectional view of the substrate and the semiconductor element connected by the connection terminal of the first embodiment. As shown in FIG. 11, the board terminal portion 55 is connected to the solder ball 69 provided on the connection pad 68 of the board 65, and the semiconductor element 60 is connected to the semiconductor element terminal portion 56. Thus, the connection terminal 50 electrically connects the substrate 65 and the semiconductor element 60.

  Since the connection terminal 50 has a configuration in which the substrate terminal portion 55 and the semiconductor element terminal portion 56 are connected to the crank-shaped connection terminal main body 51, the connection terminal 50 has a spring property. It is possible to absorb the stress generated by the difference in thermal expansion coefficient between the two.

  Next, with reference to FIG.12 and FIG.13, the metal mold | die 75 used when manufacturing the connecting terminal 50 is demonstrated. 12 is a plan view of the mold, and FIG. 13 is a cross-sectional view of the mold shown in FIG. 12 and 13, the X and X directions are the length direction of the recess 74, the Y and Y directions are the width direction of the recess 74, W2 is the width of the recess 74 (hereinafter referred to as width W2), and L4 is X , The distance between the recesses 74 arranged in the X direction (hereinafter referred to as distance L4), L5 is the length of the second groove 77 (hereinafter referred to as length L5), and L6 is the length of the first groove 76. (Hereinafter, referred to as length L6), 75A represents the upper surface of the mold 75 (hereinafter referred to as upper surface 75A). D3 is the depth of the first groove 76 when the upper surface 75A of the mold 75 is used as a reference (hereinafter referred to as depth D3), and D4 is when the bottom surface 76A of the first groove 76 is used as a reference. Depth (hereinafter referred to as depth D4) and 74a to 74d of the second groove portion 77 indicate side surfaces of the mold 75 exposed to the recess 74 (hereinafter referred to as side surfaces 74a to 74d, respectively). .

  The mold 75 is provided with a plurality of recesses 74 corresponding to the steps D1 and D2 of the connection terminal 50. The recess 74 includes a first groove 76 and a second groove 77 having a depth different from that of the first groove 76.

  The first groove 76 is a groove having a width W2, a length L6, and a depth D3. The width W2 is configured to be larger than the width W1 of the connection terminal 50 (W2> W1). The length L6 of the first groove portion 76 is substantially equal to the length L2 of the plate portion 52 of the connection terminal 50 (L2 = L6). Further, the depth D3 is configured to be substantially equal to the size of the step D1 of the connection terminal 50 (D3 = D1).

  The second groove 77 is a groove having a width W2, a length L5, and a depth D4. The length L5 of the second groove portion 77 is configured to be greater than the length L1 of the semiconductor element terminal portion 56 of the connection terminal 50 (L5> L1). Further, the depth D4 is configured to be substantially equal to the size of the step D2 of the connection terminal 50 (D4 = D2).

  Next, a method for manufacturing the connection terminal 50 according to the first embodiment of the present invention using the mold 75 having the above configuration will be described. 14, FIG. 16, and FIG. 18 are plan views showing the manufacturing process of the connection terminal according to the first embodiment of the present invention, and FIG. 15 is an AA view of the manufacturing process of the connection terminal shown in FIG. It is sectional drawing of a line direction, FIG. 17 is sectional drawing of the AA line direction of the manufacturing process of the connecting terminal shown in FIG. FIG. 19 is a cross-sectional view in the AA line direction of the manufacturing process of the connection terminal shown in FIG. 18, and FIG. 20 is a cross-sectional view of the mold after the resist film peeling process in which the connection terminal is formed. FIG. 21 is a cross-sectional view showing a state where the substrate and the connection terminal formed on the mold are connected, and FIG. 22 is a cross-sectional view of the substrate on which the mold and the connection terminal are arranged. . 14, 16, and 18, the X and X directions indicate the length direction of the recess 74, and the Y and Y directions indicate the width direction of the recess 74, respectively.

  As shown in FIGS. 14 and 15, a resist film 80 is applied to the mold 75. The resist film 80 is formed to have a thickness such that the recess 74 is embedded and the upper surface 80A of the resist film 80 is above the upper surface 75A of the mold.

  Subsequently, as shown in FIGS. 16 and 17, an opening 83 corresponding to the shape of the connection terminal 50 is formed in the resist film 80 so as to expose the mold 75. The width of the opening 83 is equal to the width W1 of the connection terminal 50, and the length of the portion where the bottom surface 77A of the second groove 77 is exposed by the opening 83 is L1 (the length L1 of the semiconductor element terminal portion 56). The length of the portion where the bottom surface 76A of the first groove 76 is exposed by the opening 83 is L2 (equal to the length L2 of the plate portion 52), and the upper surface 75A of the mold 75 is exposed by the opening 83. A resist film 80 having an opening 83 is formed so that the length of the portion becomes L3 (equal to the length L3 of the terminal portion 55 for substrate).

  In addition, a resist film 80 is provided on the side surfaces 74 a, 74 b, 75 d of the mold 75 facing the opening 83. The resist film 80 provided on the side surfaces 74a, 74b, and 75d of the mold 75 is for preventing the plating film from being deposited from the side surfaces 74a, 74b, and 75d of the mold 75 when electroforming. .

  When the opening 83 is formed in the resist film 80, laser drawing can be used. By using laser drawing, the opening 83 can be accurately formed in the resist film 80 provided in the first and second grooves 76 and 77 having different depths. In addition, by using a photosensitive material for the resist film 80, a plurality of openings 83 can be accurately formed at a time using a photo process instead of laser drawing.

  Next, as shown in FIGS. 18 and 19, a plating film is deposited from the mold 75 exposed in the opening 83 using electroforming. As a result, the connection terminals 50 having the connection terminal main body 51, the substrate terminal portion 55, and the semiconductor element terminal portion 56 can be formed in a large amount at a time with high accuracy. Electroforming is performed until the plating film has a thickness M1.

  Electroforming is a technique for producing metal products electrochemically. More specifically, in an electrolytic bath, the metal to be electrodeposited is positive, the master (mold) is negative, and direct current is reduced. This is a method of depositing a plating film to be a metal product on the surface of the mother mold and peeling the plating film from the mother mold to produce a metal product. As a material of the plating film constituting the connection terminal 50, nickel, copper, gold, silver, Ni-based alloy, or the like can be used. Further, when nickel is used as the material for the plating film, for example, a nickel sulfamate bath can be used as the electrolytic bath.

  Subsequently, as shown in FIG. 20, the resist film 80 is removed with a resist stripping solution. Next, as shown in FIG. 21, the solder balls 69 provided on the pads 68 of the substrate 65 are melted, and the solder balls 69 and the substrate terminal portions 55 of the connection terminals 50 are brought into contact with each other. The board terminal portion 55 is electrically connected. After that, as shown in FIG. 22, the connection terminal 50 having spring properties can be provided on the substrate 65 by separating the substrate 65 to which the connection terminal 50 is connected from the mold 75.

  As described above, the resist film 80 is applied to the mold 75 provided with a plurality of recesses 74 corresponding to the steps of the connection terminal 50, and the opening 83 corresponding to the shape of the connection terminal 50 is formed by a laser drawing method or a photo process. Forming the resist film 80 and then forming a plating film on the mold 75 exposed to the opening 83 by electroforming can improve the processing accuracy of the connection terminal 50 and can improve the conventional cantilever shape. Compared with the case where the connection terminal 30 is formed, the number of steps can be reduced, and a large amount of the connection terminals 50 can be formed at a time to improve the productivity of the connection terminals 50. Further, by using the connection terminal 50 to connect the semiconductor element 60 and the substrate 65, the reliability of electrical connection between the semiconductor element 60 and the substrate 65 can be improved.

  In this embodiment, the case where the connection terminal 50 is provided on the substrate 65 and the semiconductor element 60 and the substrate 65 are electrically connected via the connection terminal 50 has been described as an example. The terminal 50 may be provided in an inspection apparatus for inspecting the electrical characteristics of the semiconductor element 60, and the same effect as in this embodiment can be obtained. Further, the connection terminal 50 may be provided in the semiconductor element 60, and the semiconductor element 60 and the substrate 65 may be connected via the connection terminal 50.

(Second embodiment)
A connection terminal 90 according to a second embodiment of the present invention will be described with reference to FIGS. 23 is a perspective view of a connection terminal according to the second embodiment of the present invention, and FIG. 24 is a plan view of the connection terminal shown in FIG. FIG. 25 is a cross-sectional view of the substrate and the semiconductor element connected via the connection terminal. In FIG. 23, the Z and Z directions indicate the extending directions of the support portions 94 and 95.

  The connection terminal 90 has steps D5 and D6, and is roughly configured to include a connection terminal main body 92, a substrate terminal portion 91, and a semiconductor element terminal portion 96.

  The connection terminal main body 92 includes a spiral portion 93 and support portions 94 and 95. The spiral portion 93 has a width W3 and is formed in a spiral shape. The width W3 of the spiral portion 93 can be appropriately selected within a range of 30 μm to 100 μm, for example. On the outer peripheral side surface of the spiral portion 93, a support portion 94 extending in the Z and Z directions is provided so as to be positioned above the spiral portion 93. The support portion 94 is for supporting the space between the board terminal portion 91 and the spiral portion 93. Further, a support portion 95 extending in the Z and Z directions is provided on the inner peripheral side surface of the spiral portion 93 so as to be positioned below the spiral portion 93. The support portion 95 is for supporting the space between the spiral portion 93 and the semiconductor element terminal portion 96.

  The board terminal portion 91 has a connection surface 91A and is configured in a plate shape. The board terminal portion 91 is for electrical connection with the board 65 as shown in FIG. The connection surface 91A is a surface to which a solder ball 69 provided on the substrate 65 is connected (see FIG. 25). A step D5 is provided between the board terminal portion 91 and the spiral portion 93. The step D5 can be appropriately selected within a range of 200 μm to 500 μm, for example. When the connection terminal 90 is applied to an inspection apparatus (not shown) that inspects the electrical characteristics of the semiconductor element 60, the board terminal portion 91 is electrically connected to the inspection apparatus.

  The semiconductor element terminal portion 96 has a connection surface 96A and is formed in a cylindrical shape. The semiconductor element terminal portion 96 is for electrically connecting to the semiconductor element 60 as shown in FIG. The connection surface 96A is a surface connected to the semiconductor element 60 (see FIG. 25). A step D <b> 6 is provided between the semiconductor element terminal portion 96 and the spiral portion 93. The step D6 can be appropriately selected within a range of 100 μm to 250 μm, for example. Even when the connection terminal 90 is applied to an inspection apparatus (not shown) for inspecting the electrical characteristics of the semiconductor element 60, the semiconductor element 60 is connected to the semiconductor element terminal portion 96.

  The connection terminal 90 configured as described above has a thickness M2. The thickness M2 can be appropriately selected within a range of 10 μm to 100 μm, for example. The connection terminal 90 is composed of a plating film formed by electroforming. As a material for the plating film, for example, nickel, copper, gold, silver, a Ni-based alloy, or the like can be used.

  Next, with reference to FIG.26 and FIG.27, the metal mold | die 105 used when manufacturing the connecting terminal 90 is demonstrated. FIG. 26 is a plan view of the mold of the second embodiment, and FIG. 27 is a cross-sectional view of the mold shown in FIG. 26 in the BB line direction. 26 and 27, R2 is the diameter of the first cylindrical groove 107 (hereinafter referred to as diameter R2), R3 is the diameter of the second cylindrical groove 108 (hereinafter referred to as diameter R3), and W4. Is the width of the surface 105C of the mold 105 exposed to the first cylindrical groove 107 (hereinafter referred to as width W4), and 105a is the side surface of the mold 105 exposed to the first cylindrical groove 107 (hereinafter referred to as width W4). Reference numerals 105b and 105b denote side surfaces of the mold 105 exposed to the second cylindrical groove 108 (hereinafter referred to as side surfaces 105b), respectively.

  In FIG. 27, D7 is the depth of the first cylindrical groove 107 (hereinafter referred to as depth D7) when the upper surface 105A of the mold 105 is used as a reference, and D8 is the first cylindrical groove. The depth of the second cylindrical groove 108 (hereinafter referred to as depth D8) when the surface 105B of the mold 105 exposed to 107 is used as a reference is shown.

  The mold 105 is provided with a plurality of recesses 106 corresponding to the steps of the connection terminals 90. The recess 106 is constituted by a first cylindrical groove 107 and a second cylindrical groove 108. The first and second cylindrical groove portions 107 and 108 are a plurality of groove portions having different depths.

  The first cylindrical groove 107 is a cylindrical groove having a diameter R2 and a depth D7. The diameter R2 is configured to be larger than the diameter R1 of the semiconductor element terminal portion 96 (R2> R1). Further, the depth D7 is configured to be substantially equal to the size of the step D5 of the connection terminal 90 (D7 = D5).

  The second cylindrical groove 108 is a cylindrical groove having a diameter R3 and a depth D8. The diameter R3 is configured to be smaller than the diameter R2 of the first cylindrical groove 107 (R2> R3). The depth D8 is substantially the same as the step D6 of the connection terminal 90 (D8 = D6).

  Next, a method for manufacturing the connection terminal 90 according to the second embodiment of the present invention performed using the mold 105 will be described. 28, 30 and 33 are plan views showing the manufacturing process of the connection terminal of the second embodiment of the present invention, and FIG. 29 is a BB of the manufacturing process of the connection terminal shown in FIG. 31 is a cross-sectional view in the line direction, FIG. 31 is a cross-sectional view in the BB line direction of the manufacturing process of the connection terminal shown in FIG. 30, and FIG. 32 is C in the manufacturing process of the connection terminal shown in FIG. It is sectional drawing of a -C line direction. 34 is a cross-sectional view in the BB line direction of the connection terminal manufacturing process shown in FIG. 33, and FIG. 35 is a cross-sectional view in the CC line direction of the connection terminal manufacturing process shown in FIG. FIG. 36 is a cross-sectional view of the mold after the resist peeling process, FIG. 37 is a cross-sectional view of the mold and the substrate when the solder balls are in contact with the connection terminals, and FIG. It is sectional drawing of the board | substrate with which the metal mold | die from which the connecting terminal was removed, and the connecting terminal were connected. 36 to 38, only the mold 105 is shown as a cross-sectional view in the BB line direction, and the connection terminal 90 is shown so that the whole image can be seen.

  First, as shown in FIGS. 28 and 29, a resist film 110 is applied to the mold 105. The resist film 110 has a thickness that fills the recess 106 and covers the upper surface 105 </ b> A of the mold 105.

  Subsequently, as shown in FIGS. 30 to 32, a plurality of openings 111 corresponding to the shape of the connection terminals 90 are formed in the resist film 110. The opening 111 includes a cylindrical opening 112 corresponding to the shape of the semiconductor element terminal 96, a spiral opening 113 corresponding to the shape of the connection terminal main body 92, and a terminal corresponding to the shape of the substrate terminal 91. An opening 114 is formed.

  The cylindrical opening 112 has a cylindrical shape, and is formed so that the central axis of the cylindrical opening 112 substantially coincides with the central axis of the second groove 108 and the surface 105C of the mold 105 is exposed. Has been. The diameter R4 of the cylindrical opening 112 is smaller than the diameter R3 of the second groove portion 108 and is substantially equal to the diameter R1 of the semiconductor element terminal portion 96 (R1 = R4 <R3).

  A resist film 110 is provided on the side surface 105 b of the mold 105. By providing the resist film 110 on the side surface 105b of the mold 105, it is possible to suppress the deposition of the plating film from the side surface 105b of the mold 105 when electroforming. The thickness W6 of the resist film 110 can be set to 2 μm or more, for example.

  The spiral opening 113 is formed in a spiral shape and is formed so as to expose part of the surfaces 105B and 105C of the mold 105. The width W5 of the groove corresponding to the spiral portion 93 is configured to be smaller than the width W4 of the surface 105B and substantially equal to the width W3 of the spiral portion 93 (W3 = W5 <W4). The terminal opening 114 is formed so as to expose the upper surface 105 </ b> A of the mold 105.

  When the opening 111 is formed in the resist film 90, laser drawing can be used. By using laser drawing, the opening 111 can be accurately formed in the resist film 110 provided in the first and second grooves 107 and 108 having different depths. In addition, by using a photosensitive material for the resist film 90, a plurality of openings 111 can be accurately formed at a time using a photo process instead of laser drawing.

  Next, as shown in FIGS. 33 to 35, a plating film is deposited from the mold 105 exposed to the opening 111 by electroforming, so that the connection terminal body 92, the substrate terminal 91, and the semiconductor element A connection terminal 90 having a terminal portion 96 is formed. Electroforming is performed until the plating film has a thickness M2. As a material of the plating film constituting the connection terminal 90, nickel, copper, gold, silver, Ni-based alloy, or the like can be used. Further, when nickel is used as the material for the plating film, for example, a nickel sulfamate bath can be used as the electrolytic bath.

  Subsequently, as shown in FIG. 36, the resist film 110 is removed with a resist stripping solution. Next, as shown in FIG. 37, the solder balls 69 (external connection terminals) provided on the pads 68 of the substrate 65 are melted, and the solder balls 69 and the substrate terminal portions 91 of the connection terminals 90 are brought into contact with each other. The solder balls 69 and the board terminal portions 91 are electrically connected. Thereafter, as shown in FIG. 38, the connection terminal 90 can be provided on the substrate 65 by separating the substrate 65 connected to the connection terminal 90 from the mold 105.

  As described above, the resist film 110 is applied to the mold 105 provided with a plurality of recesses 106 corresponding to the steps of the connection terminal 90, and the opening 111 corresponding to the shape of the connection terminal 90 is formed by a laser drawing method or a photo process. By forming a plating film on the mold 105 that is formed on the resist film 110 and then exposed to the opening 111 by electroforming, the processing accuracy of the connection terminal 90 can be improved, and the conventional cantilever shape can be obtained. Compared with the case where the connection terminals 30 are formed, the number of processes can be reduced, and a large number of connection terminals 90 can be formed at one time, thereby improving the productivity of the connection terminals 00. In addition, by using the connection terminal 90 to connect the semiconductor element 60 and the substrate 65, the reliability of electrical connection between the semiconductor element 60 and the substrate 65 can be improved.

  The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to such specific embodiments, and various modifications can be made within the scope of the gist of the present invention described in the claims. Deformation / change is possible. In addition, the connection terminal should just have springiness, and the shape of a connection terminal is not limited to the shape of the connection terminals 50 and 90 shown in the 1st and 2nd Example. Further, in place of the molds 75 and 105 shown in the first and second embodiments, a recess 74 or a recess 106 is provided in the resin base material, and a recess 74 is formed on the surface with a plating seed layer compatible with electroforming. Or the resin base material provided with the recessed part 106 may be covered, and the connection terminals 50 and 90 may be formed by electroforming using this.

  The present invention can be applied to a method of manufacturing a connection terminal that can improve the processing accuracy of the connection terminal and improve the productivity of the connection terminal.

It is the figure (the 1) which showed the manufacturing process of the conventional wire-shaped connection terminal. It is the figure (the 2) which showed the manufacturing process of the conventional wire-shaped connection terminal. It is the figure (the 1) which showed the manufacturing process of the conventional cantilever connection terminal. It is the figure (the 2) which showed the manufacturing process of the conventional cantilever connection terminal. It is the figure (the 3) which showed the manufacturing process of the conventional cantilever connection terminal. It is the figure (the 4) which showed the manufacturing process of the conventional cantilever connection terminal. It is the figure (the 5) which showed the manufacturing process of the conventional cantilever connection terminal. It is FIG. (The 6) which showed the manufacturing process of the conventional cantilever connection terminal. It is a side view of the connection terminal by 1st Example of this invention. FIG. 10 is a plan view of the connection terminal shown in FIG. 9. It is sectional drawing of the board | substrate and semiconductor element which were connected by the connection terminal of 1st Example. It is a top view of a metal mold | die. It is sectional drawing of the AA line direction of the metal mold | die shown in FIG. It is the top view (the 1) which showed the manufacturing process of the connecting terminal of 1st Example of this invention. It is sectional drawing of the AA line direction of the manufacturing process of the connecting terminal shown in FIG. It is the top view (the 2) which showed the manufacturing process of the connecting terminal of 1st Example of this invention. It is sectional drawing of the AA line direction of the manufacturing process of the connecting terminal shown in FIG. It is the top view (the 3) which showed the manufacturing process of the connecting terminal of 1st Example of this invention. It is sectional drawing of the AA line direction of the manufacturing process of the connecting terminal shown in FIG. It is sectional drawing of the metal mold | die after the resist film peeling process in which the connection terminal was formed. It is sectional drawing which showed the state in which the board | substrate and the connection terminal formed in the metal mold | die were connected. It is sectional drawing of the board | substrate with which the metal mold | die and the connection terminal were arrange | positioned. It is a perspective view of the connection terminal by 2nd Example of this invention. FIG. 24 is a plan view of the connection terminal shown in FIG. 23. It is sectional drawing of the board | substrate and semiconductor element which were connected through the connection terminal. It is a top view of the metal mold | die of 2nd Example. It is sectional drawing of the BB line direction of the metal mold | die shown in FIG. It is the top view (the 1) which showed the manufacturing process of the connecting terminal of 2nd Example of this invention. It is sectional drawing of the BB line direction of the manufacturing process of the connecting terminal shown in FIG. It is the top view which showed the manufacturing process of the connection terminal of 2nd Example of this invention (the 2). FIG. 31 is a cross-sectional view in the BB line direction of the manufacturing process of the connection terminal shown in FIG. 30. FIG. 31 is a cross-sectional view in the CC line direction of the manufacturing process of the connection terminal shown in FIG. 30. It is the top view (the 3) which showed the manufacturing process of the connecting terminal of 2nd Example of this invention. FIG. 34 is a cross-sectional view in the BB line direction of the manufacturing process of the connection terminal shown in FIG. 33. It is sectional drawing of the CC line direction of the manufacturing process of the connecting terminal shown in FIG. It is sectional drawing of the metal mold | die after a resist peeling process. It is sectional drawing of a metal mold | die and a board | substrate when a solder ball contacts the connecting terminal. It is sectional drawing of the board | substrate with which the metal mold | die from which the connecting terminal was removed, and the connecting terminal were connected.

Explanation of symbols

11, 21 Substrate 12, 22 Pad 13 Gold wire 14 Ni-based plating film 15 Wire bonding 16 Wire-like connection terminal 23, 24, 27, 80, 110 Resist film 23A, 24A, 27A, 83, 111 Opening 26, 28 Plating film 30 Cantilever connection terminal 50, 90 Connection terminal 51, 92 Connection terminal main body 52 Plate part 53, 54, 94, 95 Support part 55, 91 Substrate terminal part 55A, 56A, 91A, 96A Connection surface 56, 96 Semiconductor Element Terminal Unit 60 Semiconductor Element 68 Connection Pad 69 Solder Ball 74, 106 Recess 74a-74d, 105a, 105b Side 75, 105 Mold 75A, 80A Upper Surface 76 First Groove 76A, 77A Bottom 77 Second Groove 93 spiral part 105B, 105C, 105A surface 107 first circle Groove portion 108 second cylindrical groove portion 112 cylindrical opening portion 113 spiral opening portion 114 terminal opening portion D1, D2, D5, D6 steps D3, D4, D7, D8 depth L1-L6 length M1, M2 thickness R1-R4 Diameter W1-W6 Width

Claims (4)

In the method of manufacturing a connection terminal having a step and having spring properties,
A resist film forming step of applying a resist film to a mold having a plurality of recesses corresponding to the steps of the connection terminals;
An opening forming step of exposing the mold to the resist film and forming an opening corresponding to the shape of the connection terminal;
And a plating film forming step of forming a plating film on the mold exposed in the opening by electroforming. The method of manufacturing a connection terminal according to claim 1, wherein the recess has a plurality of groove portions having different depths. The method for manufacturing a connection terminal according to claim 1, wherein the opening is formed by a laser drawing method. The method for manufacturing a connection terminal according to claim 1, wherein the opening is formed by a photo process by exposure and development.

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