JP2006045364A - Light-emitting device, piezoelectric light-emitting device and display - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device presenting light emission more intense than that of conventional material systems, a piezoelectric light-emitting device having piezoelectric characteristics and a display the surface of which is constituted of the same. <P>SOLUTION: The light-emitting device has a laminated quartz glass membrane 11 comprising a first quartz glass membrane 11a containing an impurity element as a first component, and a second quartz glass membrane 11b containing an impurity element as a second component. The laminated quartz glass membrane 11 emits lights by lights or electron beam luminescence on receiving stimulation of lights or electron beams. Or, the laminated quartz glass membrane 11 emits lights by receiving stimulation of lights or electron beams and has piezoelectric characteristics. The display is constituted by arranging two or more image elements having the piezoelectric emission device in matrix on the display surface. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a light-emitting element, a piezoelectric light-emitting element, and a display device. In particular, the present invention relates to a light-emitting element and a piezoelectric light-emitting element composed of a silica glass doped with a tetravalent element such as germanium, and a laminate thereof. The present invention relates to a display device.

Quartz glass material has excellent light propagation characteristics and is used in optical fibers, integrated optical waveguides, and the like.
On the other hand, quartz glass materials are also attracting attention as light emitting materials by photoluminescence, and various studies have been conducted in recent years.

For example, Non-Patent Document 1 describes that a Si: SiO ₂ film obtained by co-sputtering Si and SiO ₂ emits blue light by irradiation with a 325 nm He—Cd laser beam without annealing.

Non-Patent Document 2 describes that a Ti: SiO ₂ film formed by co-sputtering of Ti and SiO ₂ emits blue light by irradiation with 325 nm He—Cd laser light without annealing.

Non-Patent Document 3 discloses that bulk silica glass synthesized by firing from nano-sized amorphous silica fine particles emits white light over almost the entire visible region by irradiation with a 266 nm Nd: YAG laser at the fourth harmonic. It is described.
Osamu Hanazumi et al., IEICE Transactions C, Vol. J85-C, No. 11, pp. 1036-37 Osamu Hanazumi et al., IEICE Transactions C, Vol. J86-C, no. 11, pp. 1218-19 Takashi Uchino, “Structure and Luminescent Properties of Silica Glass Synthesized from Nano-sized Silica Fine Particles”, [online], September 23, 2003, Nanotechnology Comprehensive Support Project Center, [Search August 4, 2004], Internet <URL: http://www.nanonet.go.jp/japanese/mailmag/2003/035b.html>

  The problem to be solved is that sufficient light emission intensity is not obtained in the above-described conventional material systems.

  The light-emitting element of the present invention includes a first quartz glass film containing an impurity element with a first composition, and an impurity having a second composition different from the first composition, stacked on the first quartz glass film. A laminated quartz glass film including a second quartz glass film containing an element, and the laminated quartz glass film emits light in response to stimulation of light or an electron beam;

  The light emitting device of the present invention is a laminated quartz glass film including a first quartz glass film containing an impurity element with a first composition and a second quartz glass film containing an impurity element with a second composition. Have The laminated quartz glass film emits light by light or electron beam luminescence in response to light or electron beam stimulation.

In the light emitting device of the present invention, preferably, the first quartz glass film and the second quartz glass film each contain a tetravalent element as the impurity element.
More preferably, the laminated quartz glass film contains at least one of germanium, titanium, and tin as the tetravalent element.

The light emitting device of the present invention is preferably a third layer that is stacked on the second quartz glass film and contains an impurity element with a third composition different from the first composition and the second composition. The quartz glass film is further included.
More preferably, the first quartz glass film, the second quartz glass film, and the third quartz glass film are repeatedly laminated in this order.
More preferably, the first quartz glass film, the second quartz glass film, and the third quartz glass film each contain a tetravalent element as the impurity element.
More preferably, the first quartz glass film includes germanium as the tetravalent element, the second quartz glass film includes titanium as the tetravalent element, and the third quartz glass film includes Tin is included as the tetravalent element.

The light-emitting element of the present invention has a quartz glass film containing germanium, and the quartz glass film emits light in response to stimulation of light or an electron beam.
Alternatively, the light-emitting element of the present invention has a quartz glass film containing tin, and the quartz glass film emits light upon being stimulated by light or an electron beam.

  The light emitting device of the present invention is preferably obtained by heat-treating the laminated quartz glass film or the quartz glass film.

  In the light emitting device of the present invention, preferably, when incident light having a predetermined wavelength is incident on the laminated quartz glass film or one end surface of the quartz glass film, the intensity of the incident light is maintained while maintaining the predetermined wavelength. The amplified emitted light is emitted from the laminated quartz glass film or the other end face of the quartz glass film, which is the traveling direction of the incident light, and functions as an optical amplifier.

  In the light emitting device of the present invention, preferably, the laminated quartz glass film or the pair of end surfaces of the quartz glass film is a mirror surface, and light having a wavelength resonated between the pair of mirror surfaces is transmitted from one end surface. Output as laser light.

In the light-emitting element of the present invention, preferably, the wavelength of light to be emitted varies depending on the pressure applied to the laminated quartz glass film or the quartz glass film due to the photoelastic effect.
More preferably, the laminated quartz glass film or a pair of end surfaces of the quartz glass film is a mirror surface, and light having a wavelength resonated between the pair of mirror surfaces is emitted from one end surface as a laser beam, and photoelasticity is obtained. Due to the effect, the wavelength of the laser light to be oscillated changes according to the pressure applied to the laminated quartz glass film or the quartz glass film.

  The piezoelectric light emitting device of the present invention includes a first quartz glass film containing an impurity element with a first composition and a second quartz film laminated on the first quartz glass film and different from the first composition. A laminated quartz glass film including a second quartz glass film containing an impurity element in composition; the laminated quartz glass film emits light upon stimulation of light or an electron beam and has piezoelectric characteristics.

  The piezoelectric light emitting device of the present invention includes a laminated quartz glass including a first quartz glass film containing an impurity element with a first composition and a second quartz glass film containing an impurity element with a second composition. Has a membrane. This laminated quartz glass film emits light by light or electron beam luminescence in response to light or electron beam stimulation, and has piezoelectric properties.

  In addition, the display device of the present invention includes a first quartz glass film containing an impurity element with a first composition, and a second composition different from the first composition, which is laminated on the first quartz glass film. A laminated quartz glass film including a second quartz glass film containing an impurity element, and the laminated quartz glass film emits light in response to stimulation of light or an electron beam and has piezoelectric characteristics Are arranged in a matrix on the display surface.

  The display device according to the present invention includes a plurality of pixels having the piezoelectric light emitting element according to the present invention arranged in a matrix on the display surface.

  The light-emitting element of the present invention is a light-emitting element that can emit light with sufficiently stronger intensity than conventionally known material systems.

  The piezoelectric light-emitting device of the present invention can emit light with strong intensity and also has piezoelectric characteristics at the same time.

  The display device according to the present invention is arranged in a matrix and can emit light with high intensity, and the display surface is constituted by the piezoelectric light-emitting element according to the present invention that also has piezoelectric characteristics.

  Embodiments of a light emitting element and a piezoelectric light emitting element of the present invention will be described below with reference to the drawings.

FIG. 1A is a cross-sectional view showing the configuration of the light emitting device according to this embodiment.
For example, a laminated quartz glass film 11 is formed on a substrate 10 made of silicon or a quartz glass plate.
Here, the laminated quartz glass film 11 includes a first quartz glass (M ₁ ⁴⁺ : SiO ₂ ) film doped with a tetravalent metal ion such as germanium, titanium, or tin with a first composition; And a second quartz glass (M ₂ ⁴⁺ : SiO ₂ ) film doped with a tetravalent metal ion such as germanium, titanium, or tin with a second composition different from the composition.
The laminated quartz glass film 11 emits light by photoluminescence or electron beam luminescence when receiving excitation light PL or electron beam stimulation from the light source 15.

  In the light-emitting element of this embodiment, it is preferable that the first quartz glass film and the second quartz glass film each contain a tetravalent element as an impurity element, and in particular, the laminated quartz glass film has 4 It is preferable to contain at least one of germanium, titanium, and tin as a valent element.

FIG. 1B is a cross-sectional view showing a detailed configuration of an example of the laminated quartz glass film 11.
A first quartz glass film 11a doped with tetravalent metal ions with a first composition on a substrate 10, and a second quartz glass doped with tetravalent metal ions with a second composition different from the first composition. The film 11b and the third quartz glass film 11c doped with tetravalent metal ions with a third composition different from the first composition and the second composition are repeatedly laminated in this order. .
For example, the first quartz glass film 11a is a quartz glass film doped with 10% germanium as a tetravalent element (Ge: SiO ₂ , hereinafter also simply referred to as a germanium doped layer), and the second quartz glass film 11b. Is a quartz glass film doped with 10% titanium as a tetravalent element (Ti: SiO ₂ , hereinafter also referred to simply as a titanium doped layer), and the third quartz glass film 11c is 10% as a tetravalent element. It is a quartz glass film doped with tin (Sn: SiO ₂ , hereinafter also simply referred to as a tin-doped layer).
Each of the first quartz glass film 11a, the second quartz glass film 11b, and the third quartz glass film 11c has an artificial lattice structure with a film thickness of, for example, about 10 to 20 nm. The film thickness is 1 to several μm.

Further, it is preferable to further include a third quartz glass film laminated on the second quartz glass film and containing an impurity element with a first composition and a third composition different from the second composition.
In this case, it is preferable that the first quartz glass film, the second quartz glass film, and the third quartz glass film are repeatedly laminated in this order, and the first quartz glass film, the second quartz glass film, and It is more preferable that the third quartz glass film contains a tetravalent element as an impurity element.
Specifically, the first quartz glass film includes germanium as a tetravalent element, the second quartz glass film includes titanium as a tetravalent element, and the third quartz glass film includes tin as a tetravalent element. It can be set as the structure containing.

FIG. 1C is a cross-sectional view showing a detailed configuration of another example of the laminated quartz glass film 11.
A first quartz glass film 11a doped with tetravalent metal ions with a first composition on a substrate 10 and a second quartz glass film 11a doped with tetravalent metal ions with a second composition different from the first composition The quartz glass films 11b are alternately laminated in multiple layers.
For example, the first quartz glass film 11a is a quartz glass film (germanium doped layer) doped with 10% germanium as a tetravalent element, and the second quartz glass film 11b is 10% as a tetravalent element. It is a quartz glass film (titanium doped layer) doped with titanium.
Each of the first quartz glass film 11a and the second quartz glass film 11b has an artificial lattice structure with a film thickness of about 10 to 20 nm, for example, and the entire laminated quartz glass film 11 has a film thickness of 1 to several μm. It has become.

  A light emitting device having a laminated quartz glass film according to the present embodiment includes a first quartz glass film containing an impurity element with a first composition, and a second quartz glass film containing an impurity element with a second composition; It is a light-emitting element that has a laminated quartz glass film containing, and can emit light having a sufficiently higher intensity than a conventionally known material system.

  The laminated quartz glass film 11 having the above-described configuration is subjected to a heat treatment of, for example, about 600 to 800 ° C., whereby the emission intensity from the laminated quartz glass film 11 by photoluminescence or electron beam luminescence can be increased. .

Next, a method for forming an artificial lattice structure in which a germanium doped layer as the first quartz glass film 11a, a titanium doped layer as the second quartz glass film 11b, and a tin doped layer as the third quartz glass film 11c are stacked. To do.
For example, it can be formed by sequentially stacking layers doped with germanium, titanium, and tin in order using a multi-target sputtering apparatus, and sequentially doping these layers.
Further, even when a single target sputtering apparatus is used, the above laminated structure is formed by configuring the target portion as shown in the side view of FIG. 2A and the plan view of FIG. be able to.
The surface of one circular quartz glass plate target 20 is divided into three portions every 120 °, and appropriate amounts of germanium pellets 21a, titanium pellets 21b, and tin dioxide pellets 21c are arranged on each region.
Further, a disc-shaped rotary mask 22 provided with a 120 ° opening window 22a is provided on the upper portion of the target, and is rotated every predetermined time, thereby sequentially exposing each region of germanium pellets 21a, titanium pellets 21b, and tin dioxide pellets 21c. Then, the above laminated structure can be formed by sputtering.
Further, after forming the laminated quartz glass film as described above, for example, heat treatment at about 600 to 800 ° C. is performed in order to increase the emission intensity.

Example 1
A lower electrode is patterned on a silicon substrate, and a 10% germanium-doped layer and 10% titanium-doped layer are formed thereon by an RF magnetron sputtering apparatus having a target portion shown in FIGS. 2 (a) and 2 (b). A layer and a 10% tin-doped layer were repeatedly laminated in this order to form a light emitting device having a laminated quartz glass film having an artificial superlattice structure of (Ge / Ti / Sn).
Sputtering was performed at a substrate temperature of 200 to 250 ° C. with a gas pressure of 1 to 2 Pa in a mixed gas atmosphere of 80% argon and 20% oxygen.
The film thicknesses of the germanium-doped layer, titanium-doped layer, and tin-doped layer were each about 20 nm, and 50 to 100 layers thereof were laminated to a total thickness of 1 to 2 μm. The sputtering time required for the film thickness of 20 nm is about 4 minutes. In the above-described sputtering apparatus, the mask plate was rotated by 120 ° every about 4 minutes to perform multilayer lamination.
After forming the laminated quartz glass film, heat treatment was performed at 600 to 800 ° C. to increase the emission intensity.

With respect to the light-emitting element having the above-described laminated quartz glass film, a fluorescence spectrum obtained by spectroscopy of light emitted from the laminated quartz glass film when irradiated with excimer laser light having a wavelength of 248 nm was measured.
FIG. 3A is a fluorescence spectrum in a visible light region of a light emitting device having a laminated quartz glass film according to this example.
White fluorescent light having a broad peak in the vicinity of 420 nm and 500 to 700 nm was emitted.

FIG. 3B shows the attenuation of the fluorescence intensity of the light emitting element having the above laminated quartz glass film. This is a plot of results measured with a high-frequency oscilloscope using an O / E converter.
The fluorescence lifetime of the laminated quartz glass film according to the present example is about 20 nsec, and it has been found that the fluorescence lifetime is equivalent to that of conventionally known Si-based light emitting materials such as porous silicon and nanocrystal silicon.

(Example 2)
In the same manner as in Example 1, a 10% germanium-doped layer, a 10% titanium-doped layer, and a 10% titanium-doped layer were repeatedly laminated in this order to form a (Ge / Ti / Ti) artificial superlattice structure. A light emitting element having a quartz glass film was formed.
In the same manner as in Example 1, a fluorescence spectrum obtained by spectroscopically analyzing light emitted from the laminated quartz glass film when irradiated with excimer laser light having a wavelength of 248 nm was measured.
FIG. 4 is a fluorescence spectrum in the visible region of the light emitting device having the laminated quartz glass film according to this example.
Fluorescence having a peak with a structure finer than Ge / Ti / Sn was emitted from around 420 nm and from 500 to 700 nm.

Second Embodiment FIG. 5 is a sectional view showing the structure of a light emitting device according to this embodiment.
For example, a quartz glass film 12 is formed on a substrate 10 made of silicon or a quartz glass plate.
Here, the quartz glass film 12 is a quartz glass film containing germanium (Ge: SiO ₂ ) or a quartz glass film containing tin (Sn: SiO ₂ ).
The quartz glass film 12 emits light by photoluminescence or electron beam luminescence when stimulated by the excitation light PL or electron beam from the light source 15.
By subjecting the quartz glass film 12 having the above-described configuration to a heat treatment of, for example, about 600 to 800 ° C., the emission intensity from the quartz glass film 12 by photoluminescence or electron beam luminescence can be increased.

  The light-emitting element having the quartz glass film according to the present embodiment has a quartz glass film containing germanium or a quartz glass film containing tin, and has a strength sufficiently stronger than a conventionally known material system. A light-emitting element capable of emitting light.

Third Embodiment Using the laminated quartz glass film in the light emitting device of the first embodiment or the quartz glass film in the light emitting device of the second embodiment, an optical amplifier that amplifies and outputs incident light can be configured. .
FIG. 6 is a schematic diagram showing a configuration of a light emitting element that functions as an optical amplifier according to the present embodiment.
When the laminated silica glass film 11 in the light emitting device of the first embodiment or the silica glass film 12 in the light emitting device of the second embodiment is subjected to excitation light PL or electron beam stimulation from the light source 15, photoluminescence or electron beam luminescence. To emit light.
Here, one end surface of the quartz glass film 12 in the light-emitting element of the laminated quartz glass film 11 or the second embodiment of the light emitting device of the first embodiment, when the incident light L ₁ having a predetermined wavelength is incident, by stimulated emission The emitted light L ₂ obtained by amplifying the intensity of the incident light while maintaining a predetermined wavelength is emitted from the laminated quartz glass film or the other end face of the quartz glass film which is the traveling direction of the incident light.
In this way, the light emitting device according to this embodiment can function as an optical amplifier.

Fourth Embodiment A light emitting element (laser element) that emits laser light can be configured using the laminated quartz glass film in the light emitting element of the first embodiment or the quartz glass film in the light emitting element of the second embodiment.
FIG. 7 is a schematic diagram showing a configuration of a light emitting element that emits laser light according to the present embodiment.
In the laminated quartz glass film 11 in the light emitting element of the first embodiment or the quartz glass film 12 in the light emitting element of the second embodiment, the pair of end faces are mirror surfaces M. Upon receiving excitation light PL or electron beam stimulation from the light source 15, light is emitted by photoluminescence or electron beam luminescence. In this embodiment, light having a predetermined wavelength resonates and is amplified between the pair of mirror surfaces M. The laser light LS is emitted from one end face.

Fifth Embodiment In the laminated quartz glass film in the light-emitting element of the first embodiment or the quartz glass film in the light-emitting element of the second embodiment, the wavelength of the emitted light changes according to the applied pressure due to the photoelastic effect. It can be configured.
In particular, when applied to a laser device as in the fourth embodiment, the wavelength of laser light that oscillates in accordance with the applied pressure changes due to the photoelastic effect, and a wavelength selectable laser can be configured.

Sixth Embodiment FIG. 8 is a sectional view showing the structure of a piezoelectric light emitting device according to this embodiment.
For example, a lower electrode 13a is formed on a substrate 10 made of silicon or a quartz glass plate, and a laminated quartz glass film 11 is formed on the upper layer, and an upper electrode 13b is formed on the upper layer. Yes.
Here, the laminated quartz glass film 11 includes a first quartz glass (M ₁ ⁴⁺ : SiO ₂ ) film doped with a tetravalent metal ion such as germanium, titanium, or tin with a first composition; And a second quartz glass (M ₂ ⁴⁺ : SiO ₂ ) film doped with a tetravalent metal ion such as germanium, titanium, or tin with a second composition different from the composition.
The laminated quartz glass film 11 emits light by photoluminescence or electron beam luminescence when receiving excitation light PL or electron beam stimulation from the light source 15. Furthermore, the laminated quartz glass film 11 has piezoelectric characteristics.

In the case of a piezoelectric light emitting element having piezoelectric characteristics, for example, as shown in FIG. 1B, by repeatedly laminating three types of layers, an asymmetric structure can be obtained in the laminating direction. It is possible to secure a condition in which point symmetry is missing.
Piezoelectricity can be imparted to the laminated quartz glass film 11 configured as described above by subjecting it to a piezoelectricity imparting treatment such as a polarization treatment or a heat treatment.

The reason why the piezoelectricity is imparted by the piezoelectricity imparting process as described above and the rapid disappearance of the piezoelectricity is prevented is as follows. That is, when the impurity ions M ⁴⁺ moved by the piezoelectricity application process enter the adjacent layer beyond the layer boundary, the ion radius of the doped metal is different, so that the intruding ions are trapped and the polarization state is maintained. It is thought that stabilization is possible.
Therefore, the layer boundaries are considered to play an important role. The effect at the boundary between the lower first quartz glass film 11a and the upper second quartz glass film 11b is defined as _dab, and similarly, the lower second quartz glass film 11b and the upper third quartz glass film 11c. If the effect at the boundary is d _bc and the effect at the boundary between the lower third quartz glass film 11c and the upper first quartz glass film 11a is d _ca , the overall effect is considered to be the sum of these.

In addition to repeatedly laminating the above three types of layers, as shown in FIG. 1C, even in a configuration in which two types of layers are alternately laminated, piezoelectricity is imparted by the piezoelectricity imparting treatment as described above. .
The piezoelectricity of the entire laminated quartz glass film 11 is determined by the effect d _{ab at} the boundary between the lower first quartz glass film 11a and the upper second quartz glass film 11b, and the lower second quartz glass film 11b and the upper layer. This is the sum of the effects d _{ba at} the boundary of the first quartz glass film 11a. At this time, they cancel each other out (that is, d _ab = −d _ba ), and there is a possibility that the expression of piezoelectricity becomes poor. .
However, for example, by adjusting the film forming conditions, the boundary between the lower first quartz glass film 11a and the upper second quartz glass film 11b, and the lower second quartz glass film 11b and the upper first quartz glass. by different environments the boundary of the glass film 11a, she is possible to vary the absolute value of the effective d _ab and effectiveness d _ba (i.e. d _ab ≠ -d _ba), thereby ensuring a piezoelectric .

  The piezoelectric light-emitting device according to the present embodiment includes a laminated quartz including a first quartz glass film containing an impurity element with a first composition and a second quartz glass film containing an impurity element with a second composition. The light-emitting element has a glass film and can emit light with a sufficiently higher intensity than a conventionally known material system. At the same time, it functions as a piezoelectric element that senses pressure and converts it into voltage.

The present invention is not limited to the above embodiment.
For example, the germanium-doped layer, titanium-doped layer, and tin-doped layer do not necessarily have to be repeatedly laminated, and if a plurality of quartz glass films doped with tetravalent metals with different compositions are laminated, Further, the germanium-doped layer and the tin-doped layer are a single layer within the scope of the present invention.
In the above embodiment, photoluminescence emitted by emitting light is mainly described. However, the present invention is not limited to this, and a light emitting element that emits light by emitting an electron beam by electron beam luminescence can also be used.
In addition, a display device is configured as a configuration in which a plurality of pixels having the piezoelectric light emitting elements according to the present embodiment are arranged in a matrix on the display surface and driven by respective drive circuits in the X direction and the Y direction. be able to. For example, an image can be displayed on the display surface by a method of irradiating a light emitting element with an electron beam in a selected pixel and emitting light by electron beam luminescence.
In addition, various modifications can be made without departing from the scope of the present invention.

The light-emitting element of the present invention can be applied to a light-emitting element that emits light, and can also be applied to an optical amplifier and a laser element.
The piezoelectric light emitting element of the present invention can be applied to an element having both a light emitting element and a piezoelectric element.
The display device of the present invention can be applied to a display device that displays an image on a display surface.

FIG. 1A is a cross-sectional view showing a configuration of the light emitting device according to the first embodiment of the present invention, FIG. 1B is a cross-sectional view showing a detailed configuration of an example of a laminated quartz glass film, FIG.1 (c) is sectional drawing which shows the detailed structure of the other example of a laminated quartz glass film | membrane. FIG. 2A is a side view of a target portion of a sputtering apparatus for forming a laminated quartz glass film according to an embodiment of the present invention, and FIG. 2B is a plan view. FIG. 3A is a fluorescence spectrum of the laminated quartz glass film having an artificial lattice structure according to Example 1, and FIG. 3B shows the decay of the fluorescence intensity. 4 is a fluorescence spectrum of a laminated quartz glass film having an artificial lattice structure according to Example 2. FIG. FIG. 5 is a cross-sectional view showing a configuration of a light emitting device according to the second embodiment of the present invention. FIG. 6 is a cross-sectional view showing a configuration of a light emitting device according to the third embodiment of the present invention. FIG. 7 is a cross-sectional view showing a configuration of a light emitting device according to the fourth embodiment of the present invention. FIG. 8 is a cross-sectional view showing a configuration of a light emitting device according to the sixth embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Board | substrate 11 ... Laminated quartz glass film 11a ... 1st quartz glass film 11b ... 2nd quartz glass film 11c ... 3rd quartz glass film 12 ... Quartz glass film 13a ... Lower electrode 13b ... Upper electrode 15 ... Light source 20 ... a quartz glass plate target 21a ... germanium pellet 21b ... titanium pellets 21c ... oxide Suzuperetto 22 ... rotating mask 22a ... opening window PL ... pumping light L ₁ ... incident light L ₂ ... outgoing light LS ... laser beam M ... mirror

Claims (16)

A first quartz glass film containing an impurity element with a first composition;
A laminated quartz glass film that is laminated on the first quartz glass film and includes a second quartz glass film containing an impurity element with a second composition different from the first composition;
The laminated quartz glass film emits light in response to light or electron beam stimulation. The light emitting element according to claim 1, wherein each of the first quartz glass film and the second quartz glass film contains a tetravalent element as the impurity element. The light emitting device according to claim 2, wherein the laminated quartz glass film contains at least one of germanium, titanium, and tin as the tetravalent element. The third quartz glass film which is laminated on the second quartz glass film and contains an impurity element with a third composition different from the first composition and the second composition. Light emitting element. The light emitting element according to claim 4, wherein the first quartz glass film, the second quartz glass film, and the third quartz glass film are repeatedly laminated in this order. The light emitting element according to claim 5, wherein each of the first quartz glass film, the second quartz glass film, and the third quartz glass film contains a tetravalent element as the impurity element. The first quartz glass film includes germanium as the tetravalent element;
The second quartz glass film contains titanium as the tetravalent element;
The light emitting element according to claim 6, wherein the third quartz glass film contains tin as the tetravalent element. Having a quartz glass film containing germanium,
The quartz glass film is a light emitting element that emits light upon stimulation of light or electron beam. Having a quartz glass film containing tin,
The quartz glass film is a light emitting element that emits light upon stimulation of light or electron beam. The light emitting element according to claim 1, wherein the laminated quartz glass film or the quartz glass film is subjected to a heat treatment. When incident light having a predetermined wavelength is incident on one end surface of the laminated silica glass film or the silica glass film, outgoing light obtained by amplifying the intensity of the incident light while maintaining the predetermined wavelength is transmitted in the traveling direction of the incident light. The light emitting device according to claim 1, wherein the light emitting element emits from the laminated quartz glass film or the other end face of the quartz glass film and functions as an optical amplifier. A pair of end surfaces of the laminated quartz glass film or the quartz glass film is a mirror surface,
The light emitting element according to claim 1, wherein light having a wavelength resonated between the pair of mirror surfaces is emitted as laser light from one end face. The light emitting element according to any one of claims 1 to 10, wherein a wavelength of emitted light changes according to a pressure applied to the laminated quartz glass film or the quartz glass film due to a photoelastic effect. A pair of end surfaces of the laminated quartz glass film or the quartz glass film is a mirror surface,
The light having a wavelength resonated between the pair of mirror surfaces is emitted as laser light from one end face,
The light-emitting element according to claim 13, wherein a wavelength of laser light that oscillates changes according to a pressure applied to the laminated quartz glass film or the quartz glass film due to a photoelastic effect. A first quartz glass film containing an impurity element with a first composition;
A laminated quartz glass film that is laminated on the first quartz glass film and includes a second quartz glass film containing an impurity element with a second composition different from the first composition;
The laminated quartz glass film emits light upon stimulation of light or electron beam, and has a piezoelectric characteristic. A first quartz glass film containing an impurity element with a first composition;
A laminated quartz glass film that is laminated on the first quartz glass film and includes a second quartz glass film containing an impurity element with a second composition different from the first composition;
The laminated quartz glass film emits light in response to light or an electron beam, and includes a plurality of pixels having piezoelectric light emitting elements having piezoelectric characteristics arranged in a matrix on a display surface.

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