JP2006040881A5 - - Google Patents
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- JP2006040881A5 JP2006040881A5 JP2005146313A JP2005146313A JP2006040881A5 JP 2006040881 A5 JP2006040881 A5 JP 2006040881A5 JP 2005146313 A JP2005146313 A JP 2005146313A JP 2005146313 A JP2005146313 A JP 2005146313A JP 2006040881 A5 JP2006040881 A5 JP 2006040881A5
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前記薄膜トランジスタに電気的に接続され且つ透光性を有する第１の電極と、前記第１の電極上に設けられた発光物質を含む層と、前記発光物質を含む層上に設けられた第２の電極と、を有する発光素子と、を有し、A first electrode electrically connected to the thin film transistor and having a light-transmitting property; a layer including a light-emitting substance provided over the first electrode; and a second electrode provided over the layer including the light-emitting substance. A light emitting device having,
前記第１の電極の下には、少なくとも、光学的に１層とみなせる第１の絶縁膜と、前記第１の絶縁膜の上に接し且つ光学的に１層とみなせる第２の絶縁膜と、を有する絶縁膜積層体が設けられており、Under the first electrode, at least a first insulating film that can be optically regarded as one layer, and a second insulating film that is in contact with the first insulating film and optically regarded as one layer. Insulating film laminate having
前記第１の絶縁膜の屈折率は、前記第２の絶縁膜の屈折率と異なり、The refractive index of the first insulating film is different from the refractive index of the second insulating film,
ｍを自然数とし、λを前記発光物質を含む層が発する光の中心波長とした場合、前記第１の絶縁膜の光学的厚さは概略ｍλ／２であることを特徴とする表示装置。A display device, wherein m is a natural number, and λ is a center wavelength of light emitted from the layer containing a light-emitting substance, the optical thickness of the first insulating film is approximately mλ / 2.
前記薄膜トランジスタに電気的に接続され且つ透光性を有する第１の電極と、前記第１の電極上に設けられた発光物質を含む層と、前記発光物質を含む層上に設けられた第２の電極と、を有する発光素子と、を有し、A first electrode electrically connected to the thin film transistor and having a light-transmitting property; a layer including a light-emitting substance provided over the first electrode; and a second electrode provided over the layer including the light-emitting substance. A light emitting device having,
前記第１の電極の下には、少なくとも、光学的に１層とみなせる第１の絶縁膜と、前記第１の絶縁膜の上に接し且つ光学的に１層とみなせる第２の絶縁膜と、前記第２の絶縁膜の上に接し且つ光学的に１層とみなせる第３の絶縁膜と、を有する絶縁膜積層体が設けられており、Under the first electrode, at least a first insulating film that can be optically regarded as one layer, and a second insulating film that is in contact with the first insulating film and optically regarded as one layer. A third insulating film that is in contact with the second insulating film and is optically regarded as a single layer;
前記第２の絶縁膜の屈折率は、前記第１の絶縁膜の屈折率及び第３の絶縁膜の屈折率よりも大きく又は小さく、The refractive index of the second insulating film is larger or smaller than the refractive index of the first insulating film and the refractive index of the third insulating film,
ｍを自然数、λを前記発光物質を含む層が発する光の中心波長、前記第２の絶縁膜の光学的厚さをＬ１、前記第１及び第３の絶縁膜の光学的厚さをそれぞれＬ２とした場合、Ｌ１＋Ｌ２＝（２ｍ−１）λ／４の式を概略満たす関係であることを特徴とする表示装置。m is a natural number, λ is the central wavelength of light emitted from the layer containing the light emitting material, the optical thickness of the second insulating film is L1, and the optical thickness of the first and third insulating films is L2. In this case, the display device is characterized in that the relation of L1 + L2 = (2m−1) λ / 4 is substantially satisfied.
前記第１の下地絶縁膜上に設けられた第２の下地絶縁膜と、A second base insulating film provided on the first base insulating film;
前記第２の下地絶縁膜上に設けられた半導体層と、A semiconductor layer provided on the second base insulating film;
前記半導体層上に設けられたゲート絶縁膜と、A gate insulating film provided on the semiconductor layer;
前記ゲート絶縁膜上に設けられたゲート電極と、A gate electrode provided on the gate insulating film;
前記ゲート絶縁膜上及び前記ゲート電極上に設けられた第１の絶縁膜と、A first insulating film provided on the gate insulating film and the gate electrode;
前記第１の絶縁膜上に設けられた第２の絶縁膜と、A second insulating film provided on the first insulating film;
前記半導体層と電気的に接続され、前記第２の絶縁膜上に設けられた透光性を有する第１の電極と、A first electrode that is electrically connected to the semiconductor layer and has a light-transmitting property provided on the second insulating film;
前記第１の電極上に設けられた発光物質を含む層と、A layer containing a luminescent material provided on the first electrode;
前記発光物質を含む層上に設けられた第２の電極と、を有し、A second electrode provided on the layer containing the luminescent material,
前記第１の電極の下には、前記第１の下地絶縁膜、前記第２の下地絶縁膜、前記ゲート絶縁膜、前記第１の絶縁膜、及び前記第２の絶縁膜が順次積層された絶縁膜積層体が設けられており、The first base insulating film, the second base insulating film, the gate insulating film, the first insulating film, and the second insulating film are sequentially stacked under the first electrode. An insulating film stack is provided;
前記第１の下地絶縁膜及び前記第１の絶縁膜の屈折率は、前記第２の下地絶縁膜、前記ゲート絶縁膜、及び前記第２の絶縁膜のそれぞれの屈折率よりも大きい又は小さく、The refractive indexes of the first base insulating film and the first insulating film are larger or smaller than the refractive indexes of the second base insulating film, the gate insulating film, and the second insulating film,
ｍを自然数とし、λを前記発光物質を含む層が発する光の中心波長とした場合、前記第１の下地絶縁膜及び前記第１の絶縁膜の光学的厚さは概略ｍλ／２であることを特徴とする表示装置。When m is a natural number and λ is the center wavelength of light emitted from the layer containing the light emitting material, the optical thicknesses of the first base insulating film and the first insulating film are approximately mλ / 2. A display device.
前記第１の下地絶縁膜上に設けられた第２の下地絶縁膜と、A second base insulating film provided on the first base insulating film;
前記第２の下地絶縁膜上に設けられた半導体層と、A semiconductor layer provided on the second base insulating film;
前記半導体層上に設けられたゲート絶縁膜と、A gate insulating film provided on the semiconductor layer;
前記ゲート絶縁膜上に設けられたゲート電極と、A gate electrode provided on the gate insulating film;
前記ゲート絶縁膜上及び前記ゲート電極上に設けられた第１の絶縁膜と、A first insulating film provided on the gate insulating film and the gate electrode;
前記第１の絶縁膜上に設けられた第２の絶縁膜と、A second insulating film provided on the first insulating film;
前記半導体層と電気的に接続され、前記第２の絶縁膜上に設けられた透光性を有する第１の電極と、A first electrode that is electrically connected to the semiconductor layer and has a light-transmitting property provided on the second insulating film;
前記第１の電極上に設けられた発光物質を含む層と、A layer containing a luminescent material provided on the first electrode;
前記発光物質を含む層上に設けられた第２の電極と、を有し、A second electrode provided on the layer containing the luminescent material,
前記第１の電極の下には、前記第１の下地絶縁膜、前記第２の下地絶縁膜、前記ゲート絶縁膜、前記第１の絶縁膜、及び前記第２の絶縁膜が順次積層された絶縁膜積層体が設けられており、The first base insulating film, the second base insulating film, the gate insulating film, the first insulating film, and the second insulating film are sequentially stacked under the first electrode. An insulating film stack is provided;
前記第１の下地絶縁膜及び前記第１の絶縁膜の屈折率は、前記第２の下地絶縁膜、前記ゲート絶縁膜、及び前記第２の絶縁膜のそれぞれの屈折率よりも大きい又は小さく、The refractive indexes of the first base insulating film and the first insulating film are larger or smaller than the refractive indexes of the second base insulating film, the gate insulating film, and the second insulating film,
ｍを自然数、λを前記発光物質を含む層が発する光の中心波長、前記第２の下地絶縁膜の光学的厚さと前記ゲート絶縁膜の光学的厚さとの和をＬ１、前記第１の下地絶縁膜及び第１の絶縁膜の光学的厚さをそれぞれＬ２とした場合、Ｌ１＋Ｌ２＝（２ｍ−１）λ／４の式を概略満たす関係であることを特徴とする表示装置。m is a natural number, λ is the center wavelength of light emitted from the layer containing the luminescent material, the sum of the optical thickness of the second base insulating film and the optical thickness of the gate insulating film is L1, and the first base A display device characterized in that when the optical thicknesses of the insulating film and the first insulating film are L2, respectively, the relation of L1 + L2 = (2m−1) λ / 4 is substantially satisfied.
前記第１の下地絶縁膜及び前記第１の絶縁膜は、酸素を含む窒化珪素膜であり、The first base insulating film and the first insulating film are silicon nitride films containing oxygen,
前記第２の下地絶縁膜及び前記ゲート絶縁膜は、窒素を含む酸化珪素膜であり、The second base insulating film and the gate insulating film are silicon oxide films containing nitrogen,
前記第２の絶縁膜は、シロキサン膜であることを特徴とする表示装置。The display device, wherein the second insulating film is a siloxane film.
前記薄膜トランジスタに電気的に接続され且つ透光性を有する第１の電極と、前記第１の電極上に設けられた発光物質を含む層と、前記発光物質を含む層上に設けられた第２の電極と、を有する発光素子と、を有し、A first electrode electrically connected to the thin film transistor and having a light-transmitting property; a layer including a light-emitting substance provided over the first electrode; and a second electrode provided over the layer including the light-emitting substance. A light emitting device having,
前記第１の電極の下には、少なくとも、光学的に１層とみなせる第１の絶縁膜と、前記第１の絶縁膜の上に接し且つ光学的に１層とみなせる第２の絶縁膜と、を有する絶縁膜積層体が設けられており、Under the first electrode, at least a first insulating film that can be optically regarded as one layer, and a second insulating film that is in contact with the first insulating film and optically regarded as one layer. Insulating film laminate having
前記第１の絶縁膜の屈折率が、前記第２の絶縁膜の屈折率と異なる表示装置の作製方法であって、A method for manufacturing a display device, wherein a refractive index of the first insulating film is different from a refractive index of the second insulating film,
ｍを自然数とし、λを前記発光物質を含む層が発する光の中心波長とした場合、前記第１の絶縁膜の光学的厚さが概略ｍλ／２となるように、前記第１の絶縁膜の物理的厚さを調整して、前記第１の絶縁膜を形成することを特徴とする表示装置の作製方法。 When m is a natural number and λ is the center wavelength of light emitted from the layer containing the light emitting material, the first insulating film is set so that the optical thickness of the first insulating film is approximately mλ / 2. A method for manufacturing a display device, comprising adjusting the physical thickness of the first insulating film to form the first insulating film.
前記薄膜トランジスタに電気的に接続され且つ透光性を有する第１の電極と、前記第１の電極上に設けられた発光物質を含む層と、前記発光物質を含む層上に設けられた第２の電極と、を有する発光素子と、を有し、A first electrode electrically connected to the thin film transistor and having a light-transmitting property; a layer including a light-emitting substance provided over the first electrode; and a second electrode provided over the layer including the light-emitting substance. A light emitting device having,
前記第１の電極の下には、少なくとも、光学的に１層とみなせる第１の絶縁膜と、前記第１の絶縁膜の上に接し且つ光学的に１層とみなせる第２の絶縁膜と、前記第２の絶縁膜の上に接し且つ光学的に１層とみなせる第３の絶縁膜と、を有する絶縁膜積層体が設けられており、Under the first electrode, at least a first insulating film that can be optically regarded as one layer, and a second insulating film that is in contact with the first insulating film and optically regarded as one layer. A third insulating film that is in contact with the second insulating film and is optically regarded as a single layer;
前記第２の絶縁膜の屈折率が、前記第１の絶縁膜の屈折率及び第３の絶縁膜の屈折率よりも大きい又は小さい表示装置の作製方法であって、A method for manufacturing a display device, wherein a refractive index of the second insulating film is larger or smaller than a refractive index of the first insulating film and a refractive index of the third insulating film,
ｍを自然数、λを前記発光物質を含む層が発する光の中心波長、前記第２の絶縁膜の光学的厚さをＬ１、前記第１及び第３の絶縁膜の光学的厚さをそれぞれＬ２とした場合、Ｌ１＋Ｌ２＝（２ｍ−１）λ／４の式を概略満たす関係となるように、前記第１乃至第３の絶縁膜の物理的厚さを調整して、前記第１乃至第３の絶縁膜を形成することを特徴とする表示装置の作製方法。m is a natural number, λ is the central wavelength of light emitted from the layer containing the light emitting material, the optical thickness of the second insulating film is L1, and the optical thickness of the first and third insulating films is L2. In this case, the physical thicknesses of the first to third insulating films are adjusted so that the relationship of L1 + L2 = (2m−1) λ / 4 is satisfied, and the first to third are adjusted. A method for manufacturing a display device, comprising forming an insulating film.
前記第１の窒素を含む酸化珪素膜上に設けられた半導体層と、A semiconductor layer provided on the silicon oxide film containing the first nitrogen;
前記半導体層上及び前記第１の窒素を含む酸化珪素膜上に設けられた、第２の窒素を含む酸化珪素膜と、A silicon oxide film containing second nitrogen provided on the semiconductor layer and the silicon oxide film containing first nitrogen;
前記半導体層と重なる位置であって、前記第２の窒素を含む酸化珪素膜上に設けられたゲート電極と、A gate electrode provided on the silicon oxide film containing the second nitrogen at a position overlapping with the semiconductor layer;
前記ゲート電極上及び前記第２の窒素を含む酸化珪素膜上に設けられた第２の酸素を含む窒化珪素膜と、A silicon nitride film containing second oxygen provided on the gate electrode and the silicon oxide film containing second nitrogen;
前記第２の酸素を含む窒化珪素膜上に設けられたシロキサン膜と、A siloxane film provided on the silicon nitride film containing the second oxygen;
前記第１の酸素を含む窒化珪素膜、前記第１の窒素を含む酸化珪素膜、前記第２の酸素を含む窒化珪素膜、前記第２の窒素を含む酸化珪素膜、及び前記シロキサン膜からなる絶縁膜積層体上に設けられ、且つ前記半導体層と電気的に接続する透光性を有する第１の電極と、The silicon nitride film containing the first oxygen, the silicon oxide film containing the first nitrogen, the silicon nitride film containing the second oxygen, the silicon oxide film containing the second nitrogen, and the siloxane film A first electrode having a light-transmitting property and provided on the insulating film stack and electrically connected to the semiconductor layer;
前記第１の電極上に設けられた発光物質を含む層と、A layer containing a luminescent material provided on the first electrode;
前記発光物質を含む層上に設けられた第２の電極と、を有する表示装置の作製方法であって、A second electrode provided on the layer containing the light-emitting substance, and
ｍを自然数、λを前記発光物質を含む層が発する光の中心波長とした場合に、前記第１及び前記第２の酸素を含む窒化珪素膜の光学的厚さが概略ｍλ／２となるように、前記第１及び前記第２の酸素を含む窒化珪素膜の物理的厚さを調整して、前記第１及び前記第２の酸素を含む窒化珪素膜を形成することを特徴とする表示装置の作製方法。When m is a natural number and λ is the central wavelength of light emitted from the layer containing the light emitting material, the optical thickness of the silicon nitride film containing the first and second oxygen is approximately mλ / 2. And adjusting the physical thickness of the silicon nitride film containing the first and second oxygen to form the silicon nitride film containing the first and second oxygen. Manufacturing method.
前記第１の窒素を含む酸化珪素膜上に設けられた半導体層と、A semiconductor layer provided on the silicon oxide film containing the first nitrogen;
前記半導体層上及び前記第１の窒素を含む酸化珪素膜上に設けられた、第２の窒素を含む酸化珪素膜と、A silicon oxide film containing second nitrogen provided on the semiconductor layer and the silicon oxide film containing first nitrogen;
前記半導体層と重なる位置であって、前記第２の窒素を含む酸化珪素膜上に設けられたゲート電極と、A gate electrode provided on the silicon oxide film containing the second nitrogen at a position overlapping with the semiconductor layer;
前記ゲート電極上及び前記第２の窒素を含む酸化珪素膜上に設けられた第２の酸素を含む窒化珪素膜と、A silicon nitride film containing second oxygen provided on the gate electrode and the silicon oxide film containing second nitrogen;
前記第２の酸素を含む窒化珪素膜上に設けられたシロキサン膜と、A siloxane film provided on the silicon nitride film containing the second oxygen;
前記第１の酸素を含む窒化珪素膜、前記第１の窒素を含む酸化珪素膜、前記第２の酸素を含む窒化珪素膜、前記第２の窒素を含む酸化珪素膜、及び前記シロキサン膜からなる絶縁膜積層体上に設けられ、且つ前記半導体層と電気的に接続する透光性を有する第１の電極と、The silicon nitride film containing the first oxygen, the silicon oxide film containing the first nitrogen, the silicon nitride film containing the second oxygen, the silicon oxide film containing the second nitrogen, and the siloxane film A first electrode having a light-transmitting property and provided on the insulating film stack and electrically connected to the semiconductor layer;
前記第１の電極上に設けられた発光物質を含む層と、A layer containing a luminescent material provided on the first electrode;
前記発光物質を含む層上に設けられた第２の電極と、を有する表示装置の作製方法であって、A second electrode provided on the layer containing the light-emitting substance, and
ｍを自然数、λを前記発光物質を含む層が発する光の中心波長、前記第１の窒素を含む酸化珪素膜の光学的厚さと前記第２の窒素を含む酸化珪素膜の光学的厚さとの和をＬ１、前記第１及び第２の酸素を含む窒化珪素膜の光学的厚さをそれぞれＬ２とした場合に、Ｌ１＋Ｌ２＝（２ｍ−１）λ／４の式を概略満たす関係となるように、前記第１及び前記第２の酸素を含む窒化珪素膜、前記第１及び前記第２の窒素を含む酸化珪素膜、並びに前記シロキサン膜のそれぞれの物理的厚さを調整して、前記第１及び前記第２の酸素を含む窒化珪素膜、前記第１及び前記第２の窒素を含む酸化珪素膜、並びに前記シロキサン膜を形成することを特徴とする表示装置の作製方法。 m is a natural number, λ is a central wavelength of light emitted from the layer containing the light emitting substance, an optical thickness of the silicon oxide film containing the first nitrogen, and an optical thickness of the silicon oxide film containing the second nitrogen When the sum is L1, and the optical thickness of the silicon nitride film containing the first and second oxygen is L2, the relation of L1 + L2 = (2m−1) λ / 4 is satisfied. Adjusting the physical thickness of each of the silicon nitride film containing the first and second oxygen, the silicon oxide film containing the first and second nitrogen, and the siloxane film; And forming a silicon nitride film containing the second oxygen, the silicon oxide films containing the first and second nitrogen, and the siloxane film.
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| JP4609044B2 (en) * | 2004-11-18 | 2011-01-12 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
| JP2007220577A (en) * | 2006-02-20 | 2007-08-30 | Nippon Seiki Co Ltd | Organic el element |
| JP4678319B2 (en) * | 2006-03-15 | 2011-04-27 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
| JP5153366B2 (en) * | 2008-01-31 | 2013-02-27 | 株式会社豊田中央研究所 | Light-emitting element evaluation method and evaluation apparatus |
| JP2009272059A (en) * | 2008-04-30 | 2009-11-19 | Toppan Printing Co Ltd | El element, backlight device for liquid-crystal display using the same, lighting device using the element, electronic advertising display device using the element, and display device using the element |
| KR101889748B1 (en) * | 2011-01-10 | 2018-08-21 | 삼성디스플레이 주식회사 | Organic light emitting display and method for manufacturing thereof |
| KR102304724B1 (en) * | 2014-12-19 | 2021-09-27 | 삼성디스플레이 주식회사 | Thin film transistor substrate, display apparatus comprising the same, method for manufacturing thin film transistor substrate, and method for manufacturing display apparatus using the same |
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| JPS6379322A (en) * | 1986-09-24 | 1988-04-09 | Hitachi Ltd | Formation of resist pattern |
| JP2583994B2 (en) * | 1988-08-05 | 1997-02-19 | 松下電器産業株式会社 | Thin-film electroluminescence device |
| JP2834928B2 (en) * | 1991-09-10 | 1998-12-14 | シャープ株式会社 | Semiconductor element |
| JPH05211094A (en) * | 1992-01-31 | 1993-08-20 | Oki Electric Ind Co Ltd | Thin film el element and reflection coefficient optimizing device thereof |
| JPH07130471A (en) * | 1993-11-04 | 1995-05-19 | Nippondenso Co Ltd | Electroluminescent element |
| JP3022443B2 (en) * | 1997-11-05 | 2000-03-21 | 日本電気株式会社 | Semiconductor device and method of manufacturing the same |
| JPH11283745A (en) * | 1998-03-31 | 1999-10-15 | Denso Corp | El display device |
| TW483287B (en) * | 1999-06-21 | 2002-04-11 | Semiconductor Energy Lab | EL display device, driving method thereof, and electronic equipment provided with the EL display device |
| GB2353400B (en) * | 1999-08-20 | 2004-01-14 | Cambridge Display Tech Ltd | Mutiple-wavelength light emitting device and electronic apparatus |
| JP3989666B2 (en) * | 2000-03-09 | 2007-10-10 | セイコーエプソン株式会社 | Active matrix substrate and manufacturing method thereof, and electro-optical device and manufacturing method thereof |
| JP3943901B2 (en) * | 2001-11-08 | 2007-07-11 | 株式会社東芝 | Self-luminous display device |
| JP2003315732A (en) * | 2002-04-25 | 2003-11-06 | Fuji Photo Film Co Ltd | Image display device |
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