JP2006037172A - The sputtering method - Google Patents

The sputtering method Download PDF

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JP2006037172A
JP2006037172A JP2004219727A JP2004219727A JP2006037172A JP 2006037172 A JP2006037172 A JP 2006037172A JP 2004219727 A JP2004219727 A JP 2004219727A JP 2004219727 A JP2004219727 A JP 2004219727A JP 2006037172 A JP2006037172 A JP 2006037172A
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target
substrate
rare gas
sputtering method
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JP4734864B2 (en
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Seiji Nakajima
誠二 中嶋
Hitoshi Yamanishi
斉 山西
Takafumi Okuma
崇文 大熊
Masahiro Yamamoto
昌裕 山本
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering method capable of improving productivity without the need for adjusting a distance between target substrates even if an amount of erosion of the targets and the shape of a work change. <P>SOLUTION: In the sputtering method of arranging the target composed of a part or the whole of the components of a thin film desired to be formed inside a vacuum vessel and performing sputtering deposition by introducing at least either of rare gas or reactive gas into the vacuum vessel, a gaseous mixture composed of at least one or more kind of the rare gas is employed for the rare gas and the mixing ratio of the rare gas is changed according to the amount of erosion of the target. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、スパッタリングにより薄膜を形成するためのスパッタリング方法に関するものである。   The present invention relates to a sputtering method for forming a thin film by sputtering.

半導体集積回路（以下ＩＣ）の製造工程では誘電体の成膜が種々行われる。その目的は、例えば層間絶縁膜、エッチングや選択的なイオン注入や選択的な電極の形成のためのマスク、パッシベーション、キャパシタの誘電体膜等である。目的により材質やプラズマ処理方法が選ばれる。たとえば、ＣＶＤ、ドライエッチング、スパッタリング等種々用いられている。近年ＩＣの小型化のためにキャパシタの誘電体膜にチタン酸バリウムストロンチウム（ＢＳＴ）やチタン酸ストロンチウム（ＳＴＯ）等の高誘電体物質のプラズマ処理を行うことが検討されている。さらにセンサやアクチュエータ、不揮発性メモリデバイス用にチタン酸ジルコン酸鉛（ＰＺＴ）、ストロンチウムビスマスタンタレート（ＳＢＴ）といった強誘電体物質のプラズマ処理も検討されている。   In the manufacturing process of a semiconductor integrated circuit (hereinafter, IC), various dielectric films are formed. The purpose is, for example, an interlayer insulating film, a mask for etching, selective ion implantation and selective electrode formation, passivation, a dielectric film of a capacitor, and the like. The material and plasma processing method are selected according to the purpose. For example, various methods such as CVD, dry etching, and sputtering are used. In recent years, in order to reduce the size of an IC, it has been studied to perform plasma treatment of a high dielectric material such as barium strontium titanate (BST) or strontium titanate (STO) on a dielectric film of a capacitor. Further, plasma processing of ferroelectric materials such as lead zirconate titanate (PZT) and strontium bismastantalate (SBT) has been studied for sensors, actuators, and nonvolatile memory devices.

従来のプラズマ処理装置を、スパッタリング装置を例に図面を参照して以下に説明する。   A conventional plasma processing apparatus will be described below with reference to the drawings by taking a sputtering apparatus as an example.

図１１はそれを概念的に示す縦断面図である。   FIG. 11 is a longitudinal sectional view conceptually showing this.

従来のスパッタリング装置は真空引き可能な真空容器９１でスパッタ室を形成し、スパッタ室の下方にはターゲット９２が下部電極９３に固定保持される。さらにターゲット９２の裏面には内側磁石９４とそれを取り囲むように内側磁石９４とは反対の磁化成分を持つ外側磁石９５が配され、両磁石（９４および９５）はヨーク９６で磁気的に結合されている。この磁石（９４および９５）により、ターゲット９２表面には弧状の磁力線９７が形成される。下部電極９３は真空容器９１とは電気的に絶縁されている。そして下部電極９３はターゲット９２の温度が上昇するのを防ぐために水冷機構を内蔵するが図示を略している。   In a conventional sputtering apparatus, a sputtering chamber is formed by a vacuum chamber 91 that can be evacuated, and a target 92 is fixedly held by a lower electrode 93 below the sputtering chamber. Further, an inner magnet 94 and an outer magnet 95 having a magnetization component opposite to the inner magnet 94 are arranged on the back surface of the target 92 so as to surround the inner magnet 94, and both magnets (94 and 95) are magnetically coupled by a yoke 96. ing. The magnets (94 and 95) form arc-shaped magnetic field lines 97 on the surface of the target 92. The lower electrode 93 is electrically insulated from the vacuum vessel 91. The lower electrode 93 incorporates a water cooling mechanism to prevent the temperature of the target 92 from rising, but is not shown.

そして、スパッタ室の上方には基板保持機構９８が下部電極９３に対向して平行に配置される。そして、この基板保持機構９８は真空容器９１と電気的に絶縁されており、浮遊電位である。そして、基板保持機構９８上に基板例えば半導体基板９９が載置される。そして、基板保持機構９８は基板９９を所定の温度に維持するための加熱機構を内蔵するが図示していない。   A substrate holding mechanism 98 is disposed in parallel with the lower electrode 93 above the sputtering chamber. The substrate holding mechanism 98 is electrically insulated from the vacuum vessel 91 and has a floating potential. Then, a substrate, for example, a semiconductor substrate 99 is placed on the substrate holding mechanism 98. The substrate holding mechanism 98 incorporates a heating mechanism for maintaining the substrate 99 at a predetermined temperature, which is not shown.

そして、下部電極９３と真空容器９１（接地）間に高周波電源９１０により、所定の高周波電力が所定の負のＤＣバイアスのもとに与えられる。   Then, a predetermined high frequency power is applied between the lower electrode 93 and the vacuum vessel 91 (ground) by a high frequency power source 910 under a predetermined negative DC bias.

このスパッタリング装置で成膜処理を行うには、基板保持機構９８上に基板（例えば基板９９）を載置し、図示しない排気口につながる真空ポンプ（図示せず）により真空に引き、次に図示しないガス導入口から所定のガス（例えば、Ａｒガス）を所定流量導入しつつ排気口（図示せず）と真空ポンプ（図示せず）との間に介在する可変コンダクタンスバルブ（図示せず）を調節して所定の圧力に調節する。そして、高周波電力を印加してプラズマを発生させる。発生したプラズマ中の電子はターゲット９２裏面に配置され磁石（９４および９５）が発生する弧状の磁力線９７にトラップされ更に電離を促進しプラズマ密度を向上させる。   In order to perform the film forming process with this sputtering apparatus, a substrate (for example, the substrate 99) is placed on the substrate holding mechanism 98, and is evacuated by a vacuum pump (not shown) connected to an exhaust port (not shown). A variable conductance valve (not shown) interposed between an exhaust port (not shown) and a vacuum pump (not shown) while introducing a predetermined gas (for example, Ar gas) from a gas inlet through a predetermined flow rate. Adjust to a predetermined pressure. Then, plasma is generated by applying high frequency power. Electrons in the generated plasma are trapped by arc-shaped magnetic lines 97 generated on the back surface of the target 92 and generated by magnets (94 and 95), further promoting ionization and improving the plasma density.

また、特許文献１には、希ガスとしてＸｅガスを用いることにより、Ａｌ合金中に取り込まれる希ガスの量が減少し薄膜の緻密性が向上することが記載されている。   Patent Document 1 describes that the use of Xe gas as a rare gas reduces the amount of rare gas taken into the Al alloy and improves the denseness of the thin film.

更に、特許文献２にはＡｒ、Ｘｅ、Ｋｒの混合ガスを用いてスパッタリングによりＰｔ／Ｃｏ多層膜、Ｐｄ／Ｃｏ多層膜を形成することで良好な磁気特性が得られることが記載されている。   Further, Patent Document 2 describes that good magnetic properties can be obtained by forming a Pt / Co multilayer film and a Pd / Co multilayer film by sputtering using a mixed gas of Ar, Xe, and Kr.

また、高い膜厚均一性を必要とする場合、ターゲットが侵食されるにつれ、実効的にターゲット‐基板間距離が離れ、基板上膜厚分布が変化してしまうが、新食糧に応じてターゲット‐基板間距離を離して行き、初期からターゲットエンドまで均一な膜厚分布を得ることも行われている。
特許第２７３５６７７号公報 特許第３００１６３１号公報 Also, when high film thickness uniformity is required, as the target is eroded, the target-to-substrate distance is effectively increased and the film thickness distribution on the substrate changes. In order to obtain a uniform film thickness distribution from the initial stage to the target end, the distance between the substrates is increased.
Japanese Patent No. 2735677 Japanese Patent No. 3001631

しかしながら、従来のスパッタリング方法では、前述のようにターゲットが侵食されるに従い、ターゲット‐基板間距離を調整する必要がある。また、ワーク形状が変わった場合もターゲット‐基板間距離を調整する必要がある。このため生産性が悪いという問題があった。   However, in the conventional sputtering method, it is necessary to adjust the target-substrate distance as the target is eroded as described above. Further, it is necessary to adjust the target-substrate distance even when the workpiece shape changes. For this reason, there was a problem that productivity was bad.

本発明は、上記従来の問題点に鑑み、ターゲット侵食量、ワーク形状が変わってもターゲット−基板間距離を調整する必要がなく生産性が向上できるスパッタリング方法を提供するものである。   In view of the above-described conventional problems, the present invention provides a sputtering method capable of improving productivity without the need to adjust the target-substrate distance even if the target erosion amount and the workpiece shape change.

本願第１の発明のスパッタリング方法は、真空容器中に配置された基板に対向して設けられた形成したい薄膜の成分の一部または全部からなるターゲットに電力を印加することで前記基板を成膜するスパッタリング方法であって、前記真空容器内に前記ターゲットを構成する元素の原子量よりも大きな分子量を持つ希ガスと、前記ターゲットを構成する元素の原子量よりも小さな分子量を持つ希ガスとの混合ガスを導入し、前記ターゲットの侵食量に応じて希ガスの混合比を変化させることを特徴とする。   In the sputtering method of the first invention of the present application, the substrate is formed by applying electric power to a target composed of a part or all of the components of the thin film to be formed provided facing the substrate disposed in the vacuum vessel. A mixed gas of a rare gas having a molecular weight larger than the atomic weight of the element constituting the target and a rare gas having a molecular weight smaller than the atomic weight of the element constituting the target in the vacuum vessel. And the mixing ratio of the rare gas is changed according to the amount of erosion of the target.

また、本願第１のスパッタリング方法において、好適には、ターゲットの侵食量が進むに連れ、前記混合ガスの前記ターゲットを構成する元素の原子量よりも小さな分子量を持つ希ガスの混合比を増やすことが望ましい。   In the first sputtering method of the present application, preferably, as the amount of erosion of the target proceeds, the mixing ratio of the rare gas having a molecular weight smaller than the atomic weight of the element constituting the target of the mixed gas may be increased. desirable.

また、本願第２の発明のスパッタリング方法は、真空容器中に配置された基板に対向して設けられた形成したい薄膜の成分の一部または全部からなるターゲットに電力を印加することで前記基板を成膜するスパッタリング方法であって、前記真空容器内に前記ターゲットを構成する元素の原子量よりも大きな分子量を持つ希ガスと、前記ターゲットを構成する元素の原子量よりも小さな分子量を持つ希ガスとの混合ガスを導入し、前記基板の表面形状に応じて希ガスの混合比を変化させることを特徴とする。   In the sputtering method of the second invention of the present application, the substrate is formed by applying electric power to a target composed of a part or all of the components of the thin film to be formed provided facing the substrate disposed in the vacuum vessel. A sputtering method for forming a film, comprising: a rare gas having a molecular weight larger than an atomic weight of an element constituting the target in the vacuum vessel; and a rare gas having a molecular weight smaller than an atomic weight of an element constituting the target. A mixed gas is introduced, and the mixing ratio of the rare gas is changed according to the surface shape of the substrate.

本願第２のスパッタリング方法において、好適には、基板の表面形状が凸になるに連れ、前記混合ガスの前記ターゲットを構成する元素の原子量よりも小さな分子量を持つ希ガスの混合比を増やすことが望ましい。   In the second sputtering method of the present application, preferably, as the surface shape of the substrate becomes convex, the mixing ratio of the rare gas having a molecular weight smaller than the atomic weight of the element constituting the target of the mixed gas is increased. desirable.

更に、本願第２のスパッタリング方法において、好適には、基板の表面形状が凹になるに連れ、混合ガスうちターゲットを構成する元素の原子量よりも大きな分子量を持つ希ガスの混合比を増やすことが望ましい。   Further, in the second sputtering method of the present application, preferably, as the surface shape of the substrate becomes concave, the mixing ratio of the rare gas having a molecular weight larger than the atomic weight of the element constituting the target in the mixed gas may be increased. desirable.

以上の説明から明らかなように、本願第１発明のスパッタリング方法によれば、真空容器中に、形成したい薄膜の成分の一部または全部からなるターゲットを配し、前記真空容器中に希ガスもしくは反応性ガスの少なくともどちらか一方を導入しスパッタリング成膜を行う、スパッタリング方法において、前記希ガスを１種類以上の希ガスの混合ガスとし、前記ターゲットの侵食量に応じて前記希ガスの混合比を変えるために、ターゲット侵食量が変わってもターゲット‐基板間距離を調整する必要がなく生産性が向上できるスパッタリング方法を提供することができる。   As is apparent from the above description, according to the sputtering method of the first invention of the present application, a target consisting of part or all of the components of the thin film to be formed is placed in the vacuum vessel, and a rare gas or In the sputtering method in which at least one of the reactive gases is introduced to perform sputtering film formation, the rare gas is a mixed gas of one or more kinds of rare gases, and the mixing ratio of the rare gases according to the amount of erosion of the target Therefore, even if the amount of target erosion changes, it is not necessary to adjust the distance between the target and the substrate, and a sputtering method that can improve productivity can be provided.

また、本願第２発明のスパッタリング方法によれば、真空容器中に、形成したい薄膜の成分の一部または全部からなるターゲットを配し、前記真空容器中に希ガスもしくは反応性ガスの少なくともどちらか一方を導入しスパッタリング成膜を行う、スパッタリング方法において、前記希ガスを１種類以上の希ガスの混合ガスとし、ワークの形状に応じて前記希ガスの混合比を変えるためにワーク形状が変わってもターゲットと基板との距離を調整する必要がなく生産性が向上できるスパッタリング方法を提供することができる。   Further, according to the sputtering method of the second invention of the present application, a target consisting of part or all of the components of the thin film to be formed is arranged in a vacuum vessel, and at least one of a rare gas and a reactive gas is placed in the vacuum vessel. In the sputtering method in which one is introduced and sputtering film formation is performed, the work shape is changed in order to change the mixing ratio of the rare gas according to the shape of the work by using the rare gas as a mixed gas of one or more kinds of rare gases. In addition, it is possible to provide a sputtering method that can improve productivity without adjusting the distance between the target and the substrate.

（実施の形態１）
図１に本発明の第１の実施の形態を示す。これは真空容器９１に基板９９（今回はＳｉ基板を用いた）を投入しスパッタリングにより誘電体であるＳｉＯ2薄膜を形成するマグネトロンスパッタリング装置の例である。真空容器９１の下部に外径２００ｍｍのターゲット９２（ターゲット９２としては所望の絶縁膜を構成する元素でできたもの、若しくは反応性ガスと反応して所望の絶縁物を形成することができる材料が好ましいが、今回はＳｉＯ2を用いた）及び下部電極９３を配し、真空容器９１の上部に基板９９を配置可能な基板保持機構９８を設け、ターゲット９２−基板９９間の距離を４０ｍｍとした。この真空容器中にＡｒガスを導入し、真空容器内圧力を１．０Ｐａ（グロー放電が維持できる圧力であれば良い）とした。このとき、真空容器内に反応性ガスを導入しても良い。下部電極９３−真空容器９１間に１ｋＷ高周波電力を、整合機を通して印加した（ターゲット９２が導電性のものであれば直流電力でもよい）。基板９９上に成膜されたＳｉＯ2薄膜膜厚分布を図２に示す。 (Embodiment 1)
FIG. 1 shows a first embodiment of the present invention. This is an example of a magnetron sputtering apparatus that puts a substrate 99 (this time using a Si substrate) into a vacuum vessel 91 and forms a SiO 2 thin film as a dielectric by sputtering. Below the vacuum vessel 91 is a target 92 having an outer diameter of 200 mm (the target 92 is made of an element constituting a desired insulating film, or a material capable of forming a desired insulator by reacting with a reactive gas. (This time, SiO 2 was used) and a lower electrode 93 were disposed, and a substrate holding mechanism 98 capable of disposing the substrate 99 was provided on the upper portion of the vacuum vessel 91, and the distance between the target 92 and the substrate 99 was set to 40 mm. . Ar gas was introduced into this vacuum vessel, and the pressure inside the vacuum vessel was set to 1.0 Pa (any pressure capable of maintaining glow discharge). At this time, a reactive gas may be introduced into the vacuum vessel. A 1 kW high frequency power was applied between the lower electrode 93 and the vacuum vessel 91 through a matching machine (DC power may be used if the target 92 is conductive). The thickness distribution of the SiO 2 thin film formed on the substrate 99 is shown in FIG.

次に、６ｍｍ侵食されたターゲットを用いて同様にＳｉＯ2薄膜を成膜した。このとき基板９９上に成膜されたＳｉＯ2薄膜膜厚分布を図３に示す。基板９９の外周側で膜厚が薄くなっていることが分かる。 Next, a SiO 2 thin film was similarly formed using a target eroded by 6 mm. The SiO 2 thin film thickness distribution formed on the substrate 99 at this time is shown in FIG. It can be seen that the film thickness is thin on the outer peripheral side of the substrate 99.

そこで、新ターゲットを装着してＳｉＯ2の成膜を開始し、生産中に図４に示したようにターゲット侵食量に応じてＨｅガスの比を増やしていった。一例としてターゲットが６ｍｍ侵食されて時の膜厚分布を図５に示す。ターゲット侵食前（図２）と同等の膜厚分布が得られた。これによりターゲット侵食による膜厚分布の変化を吸収することができた。このことから、生産中にターゲットが侵食されても、ターゲット‐基板間距離を調整する必要がなくなり、生産性が向上できた。 Therefore, a new target was attached and deposition of SiO 2 was started, and the ratio of He gas was increased according to the target erosion amount as shown in FIG. 4 during production. As an example, FIG. 5 shows the film thickness distribution when the target is eroded by 6 mm. A film thickness distribution equivalent to that before target erosion (FIG. 2) was obtained. As a result, changes in the film thickness distribution due to target erosion could be absorbed. Therefore, even if the target is eroded during production, it is not necessary to adjust the target-substrate distance, and the productivity can be improved.

（実施の形態２）
図６に本発明の第２の実施の形態を示す。 (Embodiment 2)
FIG. 6 shows a second embodiment of the present invention.

これは真空容器９１に基板９９（今回はＳｉ基板を用いた）を投入しスパッタリングにより誘電体であるＳｉＯ2薄膜を形成するマグネトロンスパッタリング装置の例である。 This is an example of a magnetron sputtering apparatus that puts a substrate 99 (this time using a Si substrate) into a vacuum vessel 91 and forms a SiO 2 thin film as a dielectric by sputtering.

真空容器９１の下部に外径２００ｍｍのターゲット９２（ターゲット９２としては所望の絶縁膜を構成する元素でできたもの、もしくは反応性ガスと反応して所望の絶縁物を形成することができる材料が好ましいが、今回はＳｉＯ2を用いた）および下部電極９３を配し、真空容器９１の上部に平板基板９９を配置可能な基板保持機構９８を設け、ターゲット９２−基板９９間の距離を４０ｍｍとした。この真空容器中にＡｒガスを導入し、真空容器内圧力を１．０Ｐａ（グロー放電が維持できる圧力であれば良い）とした。（あるいは反応性ガスを混合しても良い。下部電極９３−真空容器９１間に１ｋＷ高周波電力を、整合機を通して印加した（ターゲット９２が導電性のものであれば直流電力でもよい）。平板基板９９上に成膜されたＳｉＯ2薄膜膜厚分布を図７に示す。 A target 92 having an outer diameter of 200 mm (a target 92 made of an element constituting a desired insulating film, or a material capable of forming a desired insulator by reacting with a reactive gas is formed under the vacuum vessel 91. (This time, SiO 2 was used) and a lower electrode 93, a substrate holding mechanism 98 capable of disposing a flat substrate 99 on the upper part of the vacuum vessel 91 is provided, and the distance between the target 92 and the substrate 99 is 40 mm. did. Ar gas was introduced into this vacuum vessel, and the pressure inside the vacuum vessel was set to 1.0 Pa (any pressure capable of maintaining glow discharge). (Alternatively, reactive gas may be mixed. 1 kW high-frequency power is applied between the lower electrode 93 and the vacuum vessel 91 through a matching machine (DC power may be used if the target 92 is conductive). FIG. 7 shows the SiO 2 thin film thickness distribution formed on 99.

次に、基板直径１２０ｍｍ、基板中心でのターゲット-基板間距離と最外周でのターゲット-基板間距離との差が６ｍｍである、凸形状球面基板上へ同様にＳｉＯ2薄膜を成膜した。このとき基板９９上に成膜されたＳｉＯ2薄膜膜厚分布を図８に示す。基板９９の外周側で膜厚が薄くなっていることが分かる。 Next, a SiO 2 thin film was similarly formed on a convex spherical substrate having a substrate diameter of 120 mm and a difference between the target-substrate distance at the center of the substrate and the target-substrate distance at the outermost periphery being 6 mm. The SiO 2 thin film thickness distribution formed on the substrate 99 at this time is shown in FIG. It can be seen that the film thickness is thin on the outer peripheral side of the substrate 99.

そこで、基板直径１２０ｍｍ、基板中心でのターゲット-基板間距離と最外周でのターゲット-基板間距離との差が０〜６ｍｍである、凸形状球面基板に対して、図９に示すような混合比でＨｅガスを導入し、ＳｉＯ2薄膜を成膜した。一例として、基板中心でのターゲット-基板間距離と最外周でのターゲット-基板間距離との差が６ｍｍある凸形状球面基板にＨｅガスのみを導入してＳｉＯ2薄膜を成膜して時の膜厚分布を図１０に示す。平板基板上の膜厚分布（図７）と同等の膜厚分布が得られた。これによりワーク形状による膜厚分布の変化を吸収することができた。このことから生産中にワークの形状が変化しても、ターゲット‐基板間距離を調整する必要がなくなり、生産性が向上できた。 Therefore, for a convex spherical substrate having a substrate diameter of 120 mm and a difference between the target-substrate distance at the center of the substrate and the target-substrate distance at the outermost periphery being 0 to 6 mm, the mixing as shown in FIG. He gas was introduced at a ratio to form a SiO 2 thin film. As an example, a SiO 2 thin film is formed by introducing only He gas into a convex spherical substrate having a difference between the target-substrate distance at the center of the substrate and the target-substrate distance at the outermost periphery of 6 mm. The film thickness distribution is shown in FIG. A film thickness distribution equivalent to the film thickness distribution on the flat substrate (FIG. 7) was obtained. As a result, changes in the film thickness distribution due to the workpiece shape could be absorbed. Therefore, even if the shape of the workpiece changes during production, it is not necessary to adjust the distance between the target and the substrate, and productivity can be improved.

本発明の第１の実施例で用いたマグネトロンスパッタ装置の構成を示した断面図Sectional drawing which showed the structure of the magnetron sputtering apparatus used in the 1st Example of this invention 本発明の第１の実施例でＡｒガスを導入して成膜したＳｉＯ2薄膜の膜厚分布を示す図Shows a first embodiment SiO 2 film thickness distribution of the thin film formed by introducing the Ar gas in the present invention 本発明の第１の実施例で３ｍｍ侵食されたターゲットを用いて、Ａｒガスを導入して成膜したＳｉＯ2薄膜の膜厚分布を示す図Shows a first with a 3mm eroded target 1 embodiment, the film thickness distribution of the SiO 2 thin film formed by introducing the Ar gas of the present invention 本発明の第１の実施例でターゲット侵食量に応じたＨｅガスの混合比を示す図The figure which shows the mixing ratio of He gas according to the target erosion amount in 1st Example of this invention. 本発明の第１の実施例でＨｅガスを導入して成膜したＳｉＯ2薄膜の膜厚分布を示す図Shows a first embodiment SiO 2 film thickness distribution of the thin film formed by introducing He gas in the present invention 本発明の第２の実施例で用いたマグネトロンスパッタ装置の構成を示した断面図Sectional drawing which showed the structure of the magnetron sputtering apparatus used in the 2nd Example of this invention 本発明の第２の実施例で平板基板上にＡｒガスを導入して成膜したＳｉＯ2薄膜の膜厚分布を示す図Shows the SiO 2 thin film thickness distribution was deposited by introducing Ar gas into a flat substrate in the second embodiment of the present invention 本発明の第２の実施例で凸形状基板上にＡｒガスを導入して成膜したＳｉＯ2薄膜の膜厚分布を示す図Shows the SiO 2 film thickness distribution of the thin film formed by introducing the Ar gas in a convex shape on the substrate in a second embodiment of the present invention 本発明の第２の実施例で凸形状基板上にＨｅガスを導入して成膜したＳｉＯ2薄膜の膜厚分布を示す図Shows the SiO 2 film thickness distribution of the thin film formed by introducing He gas into a convex shape on the substrate in a second embodiment of the present invention 本発明の第２の実施例でワーク形状に応じたＨｅガスの混合比を示す図The figure which shows the mixing ratio of He gas according to a workpiece | work shape in 2nd Example of this invention. 従来例で用いたマグネトロンスパッタ装置の構成を示した断面図Sectional drawing showing the configuration of the magnetron sputtering device used in the conventional example

符号の説明Explanation of symbols

９１ 真空容器
９２ ターゲット
９３ 下部電極
９４ 内側磁石
９５ 外側磁石
９６ ヨーク
９７ 弧状の磁力線
９８ 基板保持機構
９９ 基板
９１０ 電源 91 Vacuum vessel 92 Target 93 Lower electrode 94 Inner magnet 95 Outer magnet 96 Yoke 97 Arc-shaped magnetic field line 98 Substrate holding mechanism 99 Substrate 910 Power supply

Claims (5)

真空容器中に配置された基板に対向して設けられた形成したい薄膜の成分の一部または全部からなるターゲットに電力を印加することで前記基板を成膜するスパッタリング方法であって、
前記真空容器内に前記ターゲットを構成する元素の原子量よりも大きな分子量を持つ希ガスと、前記ターゲットを構成する元素の原子量よりも小さな分子量を持つ希ガスとの混合ガスを導入し、前記ターゲットの侵食量に応じて希ガスの混合比を変化させること
を特徴とするスパッタリング方法。 A sputtering method for depositing the substrate by applying electric power to a target consisting of a part or all of the components of a thin film to be formed provided facing a substrate disposed in a vacuum vessel,
A mixed gas of a rare gas having a molecular weight larger than the atomic weight of the element constituting the target and a rare gas having a molecular weight smaller than the atomic weight of the element constituting the target is introduced into the vacuum container, A sputtering method, wherein a mixing ratio of a rare gas is changed in accordance with an erosion amount. 前記ターゲットの侵食量が進むに連れ、前記混合ガスの前記ターゲットを構成する元素の原子量よりも小さな分子量を持つ希ガスの混合比を増やすことを特徴とする請求項１に記載のスパッタリング方法。 2. The sputtering method according to claim 1, wherein a mixing ratio of a rare gas having a molecular weight smaller than an atomic weight of an element constituting the target of the mixed gas is increased as the amount of erosion of the target progresses. 真空容器中に配置された基板に対向して設けられた形成したい薄膜の成分の一部または全部からなるターゲットに電力を印加することで前記基板を成膜するスパッタリング方法であって、
前記真空容器内に前記ターゲットを構成する元素の原子量よりも大きな分子量を持つ希ガスと、前記ターゲットを構成する元素の原子量よりも小さな分子量を持つ希ガスとの混合ガスを導入し、前記基板の表面形状に応じて希ガスの混合比を変化させること
を特徴とするスパッタリング方法。 A sputtering method for depositing the substrate by applying electric power to a target consisting of a part or all of the components of a thin film to be formed provided facing a substrate disposed in a vacuum vessel,
Introducing a mixed gas of a rare gas having a molecular weight larger than the atomic weight of the element constituting the target into the vacuum vessel and a rare gas having a molecular weight smaller than the atomic weight of the element constituting the target, A sputtering method characterized by changing a mixing ratio of a rare gas according to a surface shape. 前記基板の表面形状が凸になるに連れ、前記混合ガスの前記ターゲットを構成する元素の原子量よりも小さな分子量を持つ希ガスの混合比を増やすことを特徴とする請求項３に記載のスパッタリング方法。 The sputtering method according to claim 3, wherein as the surface shape of the substrate becomes convex, a mixing ratio of a rare gas having a molecular weight smaller than an atomic weight of an element constituting the target of the mixed gas is increased. . 前記基板の表面形状が凹になるに連れ、混合ガスうちターゲットを構成する元素の原子量よりも大きな分子量を持つ希ガスの混合比を増やすことを特徴とする請求項３に記載のスパッタリング方法。 The sputtering method according to claim 3, wherein as the surface shape of the substrate becomes concave, the mixing ratio of a rare gas having a molecular weight larger than the atomic weight of an element constituting the target in the mixed gas is increased.
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