JP2006024554A5 - - Google Patents

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JP2006024554A5
JP2006024554A5 JP2005145100A JP2005145100A JP2006024554A5 JP 2006024554 A5 JP2006024554 A5 JP 2006024554A5 JP 2005145100 A JP2005145100 A JP 2005145100A JP 2005145100 A JP2005145100 A JP 2005145100A JP 2006024554 A5 JP2006024554 A5 JP 2006024554A5
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electrode
light
light emitting
contact
emitting device
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JP2005145100A
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JP4741286B2 (en
JP2006024554A (en
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Claims (14)

酸化チタンを含むインジウム錫酸化物からなる第１の電極と、
前記第１の電極上に接して設けられ、湿式法によって形成された有機層と、
前記有機層上に接して設けられた発光層と、
前記発光層上に接して設けられた第２の電極と、を有し、
前記第１の電極は、可視光を透過することを特徴とする発光素子。 A first electrode made of indium tin oxide containing titanium oxide;
An organic layer provided on and in contact with the first electrode and formed by a wet method;
A light emitting layer provided on and in contact with the organic layer;
Have a, a second electrode provided in contact with the light-emitting layer,
The first electrode, the light emitting device characterized by transmitting the the visible light. 酸化チタンを含むインジウム錫酸化物からなる第１の電極と、
前記第１の電極上に接して設けられ、ポリ（エチレンジオキシチオフェン）／ポリ（スチレンスルホン酸）水溶液を塗布することによって形成された有機層と、
前記有機層上に接して設けられた発光層と、
前記発光層上に接して設けられた第２の電極と、を有し、
前記第１の電極は、可視光を透過することを特徴とする発光素子。 A first electrode made of indium tin oxide containing titanium oxide;
An organic layer provided on and in contact with the first electrode and formed by applying a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution;
A light emitting layer provided on and in contact with the organic layer;
Have a, a second electrode provided in contact with the light-emitting layer,
The light emitting element is characterized in that the first electrode transmits visible light . 前記酸化チタンは、前記第１の電極に１〜２０ｗｔ％の割合で含まれていることを特徴とする請求項１または請求項２に記載の発光素子。 The titanium oxide, the light emitting device according to claim 1 or claim 2, characterized in that it contains a proportion of 1 to 20 wt% in the first electrode. 請求項１乃至請求項３のいずれか一に記載の発光素子を含む発光装置。 A light emitting device including a light emitting element according to any one of claims 1 to 3. 酸化チタンを含むインジウム錫酸化物からなる第１の電極と、前記第１の電極上に接して設けられ、湿式法によって形成された有機層と、前記有機層上に接して設けられた発光層と、前記発光層上に接して設けられた第２の電極と、を備えた発光素子と、
トランジスタと、
前記トランジスタと前記発光素子とを電気的に接続する配線と、
を有し、
前記配線はアルミニウムと炭素とチタンとを含み、
前記第１の電極は、可視光を透過し、
前記第１の電極と前記配線とは接触していることを特徴とする発光装置。 A first electrode made of indium tin oxide containing titanium oxide; an organic layer provided on and in contact with the first electrode; and a light emitting layer provided on and in contact with the organic layer And a second electrode provided on and in contact with the light emitting layer, and a light emitting element comprising :
A transistor ,
A wiring for electrically connecting the front Symbol transistor and the light emitting element,
Have,
Before Symbol wire comprises aluminum and carbon titanium,
The first electrode transmits visible light;
The light-emitting device, wherein the first electrode and the wiring are in contact with each other. 酸化チタンを含むインジウム錫酸化物からなる第１の電極と、前記第１の電極上に接して設けられ、ポリ（エチレンジオキシチオフェン）／ポリ（スチレンスルホン酸）水溶液を塗布することによって形成された有機層と、前記有機層上に接して設けられた発光層と、前記発光層上に接して設けられた第２の電極と、を備えた発光素子と、
トランジスタと、
前記トランジスタと前記発光素子とを電気的に接続する配線と、
を有し、
前記配線はアルミニウムと炭素とチタンとを含み、
前記第１の電極は、可視光を透過し、
前記第１の電極と前記配線とは接触していることを特徴とする発光装置。 A first electrode made of indium tin oxide containing titanium oxide is provided on and in contact with the first electrode, and is formed by applying a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution. A light emitting device comprising: an organic layer; a light emitting layer provided in contact with the organic layer; and a second electrode provided in contact with the light emitting layer;
A transistor ,
A wiring for electrically connecting the front Symbol transistor and the light emitting element,
Have
The wiring includes aluminum, carbon, and titanium ,
Before SL first electrode transmits visible light,
The light emitting device, wherein the first electrode and the wiring are in contact with each other. 前記配線に含まれる前記チタンは、アルミニウムに対し０．１〜５ｗｔ％の割合で含まれていることを特徴とする請求項５または請求項６に記載の発光装置。 The light emitting device according to claim 5 or 6, wherein the titanium contained in the wiring is contained in a proportion of 0.1 to 5 wt% with respect to aluminum. 前記炭素は、アルミニウムに対し１〜５ｗｔ％の割合で含まれていることを特徴とする請求項５乃至請求項７のいずれか一に記載の発光装置。 The carbon aluminum-emitting device according to any one of claims 5 to 7, characterized in that it contains a proportion of 1-5 wt% with respect to. 酸化チタンを含むインジウム錫酸化物からなる第１の電極を形成し、
前記第１の電極にＵＶ照射し、
ＵＶ照射された前記第１の電極上に湿式法を用いて有機層を形成し、
前記有機層の上に発光層を形成し、
前記発光層の上に第２の電極を形成することを特徴とする発光装置の作製方法。 A first electrode that Do indium tin oxide containing titanium oxide is formed,
Irradiating the first electrode with UV;
An organic layer is formed on the first electrode irradiated with UV using a wet method,
Forming a light emitting layer on the organic layer;
A method for manufacturing a light-emitting device, wherein a second electrode is formed over the light-emitting layer. トランジスタを覆う層間絶縁層を形成し、
前記層間絶縁層の上に、前記層間絶縁層に設けられたコンタクトホールを通る配線によって前記トランジスタと電気的に接続し、酸化チタンを含むインジウム錫酸化物からなる第１の電極を形成し、
前記第１の電極の一部が露出するように開口部が設けられた隔壁層を形成し、
前記第１の電極にＵＶ照射し、
ＵＶ照射された前記第１の電極上に湿式法を用いて有機層を形成し、
前記有機層の上に発光層を形成し、
前記発光層の上に第２の電極を形成することを特徴とする発光装置の作製方法。 Forming an interlayer insulating layer covering the transistor;
On the interlayer insulating layer, wherein the transistor is electrically connected to form a first electrode that Do indium tin oxide containing titanium oxide by the wiring through a contact hole formed in the interlayer insulating layer,
Forming a partition wall layer having an opening so that a part of the first electrode is exposed;
Irradiating the first electrode with UV;
An organic layer is formed on the first electrode irradiated with UV using a wet method,
Forming a light emitting layer on the organic layer;
A method for manufacturing a light-emitting device, wherein a second electrode is formed over the light-emitting layer. 前記有機層は、ポリ（エチレンジオキシチオフェン）／ポリ（スチレンスルホン酸）水溶液を塗布することによって形成されることを特徴とする請求項９または請求項１０に記載の発光装置の作製方法。 The organic layer is poly (ethylene dioxythiophene) / poly method for manufacturing a light-emitting device according to claim 9 or claim 10, characterized in that it is formed by applying a (styrene sulfonic acid) aqueous solution. 前記配線はアルミニウムと炭素とチタンとを含むことを特徴とする請求項９乃至請求項１１のいずれか一に記載の発光装置の作製方法。 The method for manufacturing a light-emitting device according to any one of claims 9 to 11 wherein the wiring is characterized in that it comprises a titanium aluminum and carbon. 前記配線に含まれる前記チタンは、アルミニウムに対し０．１〜５ｗｔ％の割合で含まれていることを特徴とする請求項１２に記載の発光装置の作製方法。 The method for manufacturing a light-emitting device according to claim 12 , wherein the titanium contained in the wiring is contained at a ratio of 0.1 to 5 wt% with respect to aluminum. 前記炭素は、アルミニウムに対し１〜５ｗｔ％の割合で含まれていることを特徴とする請求項１２または請求項１３に記載の発光装置の作製方法。 The carbon is a method for manufacturing a light-emitting device according to claim 12 or claim 13, characterized in that it contains a proportion of 1-5 wt% with respect to aluminum.
JP2005145100A 2004-06-11 2005-05-18 Semiconductor device and manufacturing method thereof Expired - Fee Related JP4741286B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005145100A JP4741286B2 (en) 2004-06-11 2005-05-18 Semiconductor device and manufacturing method thereof

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Application Number Priority Date Filing Date Title
JP2004174852 2004-06-11
JP2004174852 2004-06-11
JP2005145100A JP4741286B2 (en) 2004-06-11 2005-05-18 Semiconductor device and manufacturing method thereof

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JP2006024554A JP2006024554A (en) 2006-01-26
JP2006024554A5 true JP2006024554A5 (en) 2008-06-26
JP4741286B2 JP4741286B2 (en) 2011-08-03

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JP5521848B2 (en) 2010-07-21 2014-06-18 デクセリアルズ株式会社 Anisotropic conductive film, connection structure and manufacturing method thereof

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JPH0843840A (en) * 1994-07-27 1996-02-16 Toppan Printing Co Ltd Electrode plate for display device
JP3028951B1 (en) * 1998-12-16 2000-04-04 日本電気株式会社 Method for manufacturing organic thin film electroluminescent device
JP2001223076A (en) * 1999-11-30 2001-08-17 Sharp Corp Manufacturing method of organic electric field light emitting element
JP2001282139A (en) * 2000-01-27 2001-10-12 Sharp Corp Active matrix substrate and method for manufacturing the same as well as liquid crystal display device
JP4731714B2 (en) * 2000-04-17 2011-07-27 株式会社半導体エネルギー研究所 Light emitting device
JP2002040484A (en) * 2000-07-26 2002-02-06 Hitachi Ltd Active matrix type liquid crystal display device
JP2002231445A (en) * 2001-01-31 2002-08-16 Dainippon Printing Co Ltd El element and method of manufacture
JP2003089864A (en) * 2001-09-18 2003-03-28 Mitsui Mining & Smelting Co Ltd Aluminum alloy thin film, wiring circuit having the same thin film, and target material depositing the thin film
JP4394446B2 (en) * 2001-11-07 2010-01-06 日本電気株式会社 Method for manufacturing electroluminescent body, electroluminescent body, and electroluminescent display device
JP2003297585A (en) * 2002-04-08 2003-10-17 Sharp Corp Organic electroluminescent element, and manufacturing method of the same
JP2004095240A (en) * 2002-08-30 2004-03-25 Mitsui Chemicals Inc Transparent electrode
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