JP2005536958A - 気密のカプセル化部材を備えた共振器および素子 - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
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- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
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-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
Abstract
Description
Claims (16)
- 層構造体(SA)とし実現されているバルク音波によって動作する共振器において、
共振器のための電極として用いられる少なくとも第1および第2の電極層(ES1,ES2)と、
該2つの電極層(ES1,ES2)の間に配置されている少なくとも1つの圧電層(PS)が設けられており、
前記層構造体(SA)はウェハ(SU)の上に配置されており、
該層構造体(SA)は面全体にわたり誘電層(DS)で覆われており、該誘電層(DS)は金属層(MS)で覆われており、
該誘電層(DS)は共振器のための気密封止部材として形成されており、
前記の誘電層(DS)と金属層(MS)の材料および厚さの選定により、それぞれ一方の層が相対的に低い音響インピーダンスをもち、一方の層が相対的に高い音響インピーダンスをもち、共振器内に発生可能なバルク音波に対する音響ミラーが形成されることを特徴とする、
バルク音波によって動作する共振器。 - 請求項1記載の共振器において 前記の誘電層(DS)および金属層(MS)の層厚は、4分の1波長の領域または4分の1波長の奇数倍の領域にあることを特徴とする共振器。
- 請求項1または2記載の共振器において、
前記音響ミラー(AS)は、前記金属層(MS)の上に配置された少なくとも別の層のペアを有しており、該層のペアは相対的に低い音響インピーダンス(LI)をもつ層と相対的に高いインピーダンス(HI)をもつ層から成ることを特徴とする共振器。 - 請求項1から3のいずれか1項記載の複数の共振器を備えた素子において、
複数の共振器(R1,R2)が層構造体(SA)として実現されており、該複数の共振器(R1,R2)は電極層(ES)を介して互いに電気的に結線されていて、回路の少なくとも一部分を形成しており、
誘電層(DS)と金属層(MS)、ならびに設けられているのであれば少なくとも1つの別の層のペア(LI,LH)は、共振器全体を覆っており、該共振器のために音響ミラー(AS)を形成していることを特徴とする素子。 - 請求項4記載の素子において、
前記誘電層(DS)は有機層であることを特徴とする素子。 - 請求項5記載の素子において、
前記誘電層(DS)はベンゾシクロブテンを有することを特徴とする素子。 - 請求項4〜6のいずれか1項記載の素子において、
前記誘電層(DS)は、面全体にわたりウェハ(SU)においてすべての共振器(R1,R2)の上に形成されており、ほぼ平坦化されていて、前記音響ミラー(AS)のために必要とされる層厚は共振器の上でのみ維持されていることを特徴とする素子。 - 請求項4から7のいずれか1項記載の素子において、
ウェハ(SU)の上または中に、異なる構造形式をもつ別の能動的または受動的な回路素子(SE)が配置されていて、前記共振器(R1,R2)とともに回路に集積されており、
前記音響ミラー(SA)を成す層は、該能動的または受動的な回路素子(SE)と共振器(R1,R2)のためのカプセル化部材を成していることを特徴とする素子。 - 請求項4から8のいずれか1項記載の素子において、
すべての共振器(R1,R2)ならびに能動的および受動的な回路素子(SE)は、ウェハ(SU)上で1つの回路に集積されており、該回路は高周波スイッチ、整合回路、アンテナ回路、ダイオードスイッチ、トランジスタスイッチ、ハイパスフィルタ、ローパスフィルタ、バンドパスフィルタ、帯域消去フィルタ、周波数調整可能なフィルタ、出力増幅器、前置増幅器、LNA、ディプレクサ、デュプレクサ、フィルタバンク、結合器、方向性結合器、記憶素子、バラン、ミキサまたは発振器の中から選択されることを特徴とする素子。 - 請求項4から9のいずれか1項記載の素子において、
前記ウェハ(SU)の上に、同じ構造形式をもつ別の素子が配置されていることを特徴とする素子。 - 請求項1から10のいずれか1項記載の素子において、
相対的に低い音響インピーダンスをもつ誘電体材料はlow−k誘電体であることを特徴とする素子。 - 請求項1から11のいずれか1項記載の素子において、
相対的に高い音響インピーダンスをもつ材料はタングステンW、モリブデンMo、金Auまたは窒化アルミニウムAlNであることを特徴とする素子。 - 請求項12記載の素子において、
Low−k誘電体としてエーロゲル、多孔性珪酸塩、オルガノ珪酸塩、縮合されたシルセスキオキサンから誘導されたシロキサン、ポリマの芳香族化合物または架橋されたポリフェニレンが選択されることを特徴とする素子。 - 請求項1から13のいずれか1項記載の素子において、
前記ウェハ(SU)は表面にはんだ付け可能な接触接続部材を有しており、該接触接続部材は前記共振器(R1,R2)と、または該共振器とともに回路に集積されている1つまたは複数の能動素子(SE)および/または受動素子(SE)と導電接続されていることを特徴とする素子。 - 請求項1から13のいずれか1項記載の素子において、
前記ウェハ(SU)は下面にはんだ付け可能な接続部材を有しており、該接続部材はウェハを通るスルーホールを介して前記共振器(R1,R2)と、または該共振器とともに回路に集積されている1つまたは複数の能動素子(SE)および/または受動素子(SE)と導電接続されていることを特徴とする素子。 - 請求項1から14のいずれか1項記載の素子において、
バルク音波共振器、スタック構造型水晶フィルタまたは結合型共振器フィルタとして構成されていることを特徴とする素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE10239317A DE10239317A1 (de) | 2002-08-27 | 2002-08-27 | Resonator und Bauelement mit hermetischer Verkapselung |
PCT/EP2003/006597 WO2004021568A1 (de) | 2002-08-27 | 2003-06-23 | Resonator und bauelement mit hermetischer verkapselung |
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JP2005536958A true JP2005536958A (ja) | 2005-12-02 |
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JP2004531775A Pending JP2005536958A (ja) | 2002-08-27 | 2003-06-23 | 気密のカプセル化部材を備えた共振器および素子 |
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US (1) | US7385467B2 (ja) |
JP (1) | JP2005536958A (ja) |
DE (1) | DE10239317A1 (ja) |
WO (1) | WO2004021568A1 (ja) |
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JP2016123016A (ja) * | 2014-12-25 | 2016-07-07 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
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US9069005B2 (en) * | 2011-06-17 | 2015-06-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Capacitance detector for accelerometer and gyroscope and accelerometer and gyroscope with capacitance detector |
JP2013051397A (ja) * | 2011-08-03 | 2013-03-14 | Ngk Spark Plug Co Ltd | 配線基板の製造方法 |
US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
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KR102324960B1 (ko) | 2015-06-25 | 2021-11-12 | 삼성전자 주식회사 | 통신 장치 및 이를 포함하는 전자 장치 |
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CN113810005A (zh) * | 2021-09-08 | 2021-12-17 | 常州承芯半导体有限公司 | 体声波谐振装置、滤波装置及射频前端装置 |
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-
2002
- 2002-08-27 DE DE10239317A patent/DE10239317A1/de not_active Withdrawn
-
2003
- 2003-06-23 US US10/523,872 patent/US7385467B2/en not_active Expired - Lifetime
- 2003-06-23 JP JP2004531775A patent/JP2005536958A/ja active Pending
- 2003-06-23 WO PCT/EP2003/006597 patent/WO2004021568A1/de active Application Filing
Cited By (4)
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JP2011151553A (ja) * | 2010-01-20 | 2011-08-04 | Murata Mfg Co Ltd | 弾性波デュプレクサ |
JP2011151552A (ja) * | 2010-01-20 | 2011-08-04 | Murata Mfg Co Ltd | 弾性波デュプレクサ |
US8525615B2 (en) | 2010-01-20 | 2013-09-03 | Murata Manufacturing Co., Ltd. | Elastic wave duplexer having a sealing member that includes a recess |
JP2016123016A (ja) * | 2014-12-25 | 2016-07-07 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
Also Published As
Publication number | Publication date |
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US7385467B2 (en) | 2008-06-10 |
US20060164186A1 (en) | 2006-07-27 |
DE10239317A1 (de) | 2004-03-11 |
WO2004021568A1 (de) | 2004-03-11 |
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