JP2005530171A - 画像検知デバイス及び方法 - Google Patents
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Abstract
Description
・変調周波数と同期してスイッチングするそれぞれの電極接点ごとに1つの入力電圧ライン
・信号が読み出され、新しい露光及び電荷蓄積周期が始まった後に、電子的な電荷検出回路をリセットするための1つのリセット信号
・リセット動作の際に、電荷記憶及び蓄積拡散領域を放電する目標電位値を提供する1つのリセット基準電圧ライン
・信号の読み出し及び/又はリセットを要するピクセルの選択を可能にする1つのピクセル選択ライン
・対応する電荷記憶拡散領域と接続されたそれぞれの電荷検出回路ごとの1つの出力信号。ピクセルセレクトラインは、出力信号を、いくつかのピクセルに、典型的には、列全体に共通の1つ又は複数のバスに接続する。或いは、この代わりに、拡散信号よりも少ない数のバスラインを提供することも可能であり、この場合には、デマルチプレクシング回路により、これらの信号を、利用可能なバスに分配することになる。尚、この場合には、それぞれのピクセルに対して、デマルチプレクシング回路を制御するための適切なラインを提供する必要がある。
Claims (22)
- 半導体基板と、前記半導体基板上に形成された放射透明絶縁レイヤと、前記絶縁レイヤ上に透明な抵抗性材料のレイヤとして形成された電極と、前記抵抗性レイヤの一端に隣接する第1接点と、前記第1接点に隣接して配置され、前記第1接点の電位よりも高い電位にバイアスされている前記半導体基板とは反対の導電性の前記半導体基板内の第1拡散領域と、前記第2接点に隣接して配置され、前記第2接点の電位よりも高い電位にバイアスされている前記半導体基板とは反対の導電性の前記半導体基板内の第2拡散領域と、前記第1及び第2接点間に電位を印加する手段と、前記第1及び/又は第2拡散領域の前記電荷を読み出す手段と、を有する画像センサ素子。
- 前記抵抗性レイヤは、矩形である請求項1記載の画像センサ素子。
- 4つの接点を有し、これらのそれぞれが、隣接する拡散領域を具備している請求項2記載の画像センサ素子。
- 前記接点は、それぞれの側部に1つずつ配置されている請求項3記載の画像センサ素子。
- 前記接点は、それぞれのコーナーに1つずつ配置されている請求項3記載の画像センサ素子。
- 2つの接点が、反対側に位置する2つの側部のそれぞれに配置されている請求項3記載の画像センサ素子。
- 前記抵抗性レイヤは、正方形である請求項2から6のいずれか一項記載の画像センサ素子。
- 前記絶縁レイヤの厚さは、1nm〜1μmである請求項1から7のいずれか一項記載の画像センサ素子。
- 前記電極は、10Ω/sq.を上回る面抵抗を具備している請求項1から8のいずれか一項記載の画像センサ素子。
- 前記素子の前記感光部は、前記基板の表面における半導体レイヤとして実装され、前記表面半導体レイヤは、前記基板とは反対の導電性を有しており、前記素子は、前記表面半導体レイヤが完全に空乏状態になるように、前記表面半導体レイヤをバイアスする手段を更に有している請求項1から9のいずれか一項記載の画像センサ素子。
- 前記読み出し手段は、ピクセルセレクトトランジスタを有するソースフォロアとして実装される請求項1から10のいずれか一項記載の画像センサ素子。
- 前記読み出し手段は、ピクセルセレクトトランジスタを有するリセット可能な電荷増幅器として実装される請求項1から10のいずれか一項記載の画像センサ素子。
- 前記読み出し手段は、ピクセルセレクトトランジスタを有する、前記第1又は第2拡散領域における光電流を計測するトランスコンダクタンス増幅器として実装される請求項1から10のいずれか一項記載の画像センサ素子。
- 前記読み出し手段は、前記表面半導体レイヤ内において実装され、前記表面半導体レイヤは、接地電位に接続するべく構成されており、前記半導体基板は、前記半導体基板内に深い空乏レイヤを生成するための電位に接続するべく構成されている請求項10から13のいずれか一項記載の画像センサ素子。
- それぞれの画像センサ素子が請求項1から14のいずれか一項記載の画像センサ素子である画像センサ素子の一次元又は二次元のアレイからなる画像センサと、
前記入射波動場の変調周波数と同期して、それぞれの前記画像センサ素子電極上の前記接点に時間に依存した電圧パターンを供給し、光電荷を蓄積する前記対応する拡散領域に向かって光電荷を横方向に搬送する信号ジェネレータと、
前記入射変調波動場の変調パラメータの算出に使用するべく、前記拡散領域における前記電荷を読み出す手段と、
を有する変調波動場を検出及び復調するデバイス。 - 光電荷は、前記入射波動場の前記変調周波数の複数の周期にわたって蓄積される請求項15記載のデバイス。
- 前記変調周波数のそれぞれの周期は、いくつかの時間インターバルに分割され、それぞれの時間インターバルごとに、別個の接点及び拡散領域が、それぞれの画像センサ素子内において提供される請求項15又は16記載のデバイス。
- 前記拡散領域から読み出された前記電荷から前記波動場の前記変調パラメータを算出する評価ユニット有する請求項15から17のいずれか一項記載のデバイス。
- 変調波動場を検出及び復調する方法であって、
(a)請求項17から20のいずれか一項記載のデバイスの画像検知素子のアレイを前記変調波動場によって照射する段階と、
(b)前記変調周波数のそれぞれの周期をいくつかのインターバルに分割する段階と、
(c)それぞれの時間インターバルごとに、別個の接点及び対応する拡散領域を提供する段階と、
(d)それぞれの時間インターバルにおいて、光励起電荷を対応する拡散領域に搬送し、それらをそこに保存する段階と、
(e)前記拡散領域から前記保存されている電荷を読み出す段階と、
(f)前記拡散領域から読み出された前記電荷から復調パラメータを算出する段階と、
を有する方法。 - 電荷が前記変調周波数の複数の周期にわたって前記拡散領域内に蓄積される請求項19記載の方法。
- 前記波動場は、光学素子によって前記アレイ上に案内される請求項19又は20記載の方法。
- 反射によって物体の三次元形状を判定する方法であって、
(a)前記物体を変調光源によって照射する段階と、
(b)前記物体から反射された光を、請求項17から20のいずれか一項記載のデバイスの画像センサ素子のアレイ上に結像させ、局所位相が前記物体から前記検出装置への局所距離を表している二次元の強度変調波動場を形成する段階と、
(c)前記変調周波数のそれぞれの周期をいくつかの時間インターバルに分割する段階と、
(d)それぞれの時間インターバルごとに、別個の接点及び対応する拡散領域を提供する段階と、
(e)それぞれの時間インターバルにおいて、光励起電荷を前記対応する拡散領域に搬送し、それらをそこに保存する段階と、
(f)前記拡散領域から前記保存されている電荷を読み出す段階と、
(g)前記アレイ上に入射する前記変調波動場の前記局所位相を算出する段階と、
(h)前記局所位相情報を使用して前記物体の三次元形状を判定する段階と、
を有する方法。
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GB0214257A GB2389960A (en) | 2002-06-20 | 2002-06-20 | Four-tap demodulation pixel |
PCT/GB2003/002434 WO2004001354A1 (en) | 2002-06-20 | 2003-06-05 | Image sensing device and method of |
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JP2005530171A true JP2005530171A (ja) | 2005-10-06 |
JP2005530171A5 JP2005530171A5 (ja) | 2006-06-08 |
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US (2) | US7498621B2 (ja) |
EP (1) | EP1516165B1 (ja) |
JP (1) | JP2005530171A (ja) |
AT (1) | ATE438090T1 (ja) |
AU (1) | AU2003241032A1 (ja) |
DE (1) | DE60328605D1 (ja) |
GB (1) | GB2389960A (ja) |
WO (1) | WO2004001354A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011065167A1 (ja) | 2009-11-24 | 2011-06-03 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI289708B (en) | 2002-12-25 | 2007-11-11 | Qualcomm Mems Technologies Inc | Optical interference type color display |
EP1458087B1 (en) * | 2003-03-10 | 2005-10-12 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Electrical circuit, apparatus and method for the demodulation of an intensity-modulated signal |
US7342705B2 (en) * | 2004-02-03 | 2008-03-11 | Idc, Llc | Spatial light modulator with integrated optical compensation structure |
US7855824B2 (en) * | 2004-03-06 | 2010-12-21 | Qualcomm Mems Technologies, Inc. | Method and system for color optimization in a display |
EP1583150A1 (en) | 2004-03-31 | 2005-10-05 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Image sensor with large-area, high-sensitivity and high-speed pixels |
DE102004016624A1 (de) * | 2004-04-05 | 2005-10-13 | Pmdtechnologies Gmbh | Photomischdetektor |
EP1622200A1 (en) * | 2004-07-26 | 2006-02-01 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Solid-state photodetector pixel and photodetecting method |
EP1624490B1 (en) * | 2004-08-04 | 2018-10-03 | Heptagon Micro Optics Pte. Ltd. | Large-area pixel for use in an image sensor |
EP1624491B1 (en) * | 2004-08-04 | 2009-05-27 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Solid-state photosensor with electronic aperture control |
US7813026B2 (en) * | 2004-09-27 | 2010-10-12 | Qualcomm Mems Technologies, Inc. | System and method of reducing color shift in a display |
US20060066586A1 (en) * | 2004-09-27 | 2006-03-30 | Gally Brian J | Touchscreens for displays |
US7508571B2 (en) * | 2004-09-27 | 2009-03-24 | Idc, Llc | Optical films for controlling angular characteristics of displays |
US7630123B2 (en) * | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Method and device for compensating for color shift as a function of angle of view |
US7710636B2 (en) * | 2004-09-27 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Systems and methods using interferometric optical modulators and diffusers |
US8004504B2 (en) * | 2004-09-27 | 2011-08-23 | Qualcomm Mems Technologies, Inc. | Reduced capacitance display element |
EP1659418A1 (en) * | 2004-11-23 | 2006-05-24 | IEE INTERNATIONAL ELECTRONICS & ENGINEERING S.A. | Method for error compensation in a 3D camera |
DE102005011116B4 (de) * | 2005-03-10 | 2012-03-15 | Agtatec Ag | Vorrichtung zur Ansteuerung und/oder Überwachung eines Flügels |
EP1752748B1 (en) | 2005-08-12 | 2008-10-29 | MESA Imaging AG | Highly sensitive, fast pixel for use in an image sensor |
EP1777747B1 (en) * | 2005-10-19 | 2008-03-26 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Device and method for the demodulation of modulated electromagnetic wave fields |
EP1777811B1 (en) | 2005-10-19 | 2018-10-03 | Heptagon Micro Optics Pte. Ltd. | Method and Device for the demodulation of modulated optical signals |
US7603001B2 (en) * | 2006-02-17 | 2009-10-13 | Qualcomm Mems Technologies, Inc. | Method and apparatus for providing back-lighting in an interferometric modulator display device |
EP1943555B1 (en) * | 2006-10-06 | 2012-05-02 | QUALCOMM MEMS Technologies, Inc. | Optical loss structure integrated in an illumination apparatus of a display |
WO2008045207A2 (en) | 2006-10-06 | 2008-04-17 | Qualcomm Mems Technologies, Inc. | Light guide |
WO2008045462A2 (en) * | 2006-10-10 | 2008-04-17 | Qualcomm Mems Technologies, Inc. | Display device with diffractive optics |
US8264673B2 (en) * | 2007-07-03 | 2012-09-11 | Hamamatsu Photonics K.K. | Back-illuminated distance measuring sensor and distance measuring device |
US7586077B2 (en) | 2007-07-18 | 2009-09-08 | Mesa Imaging Ag | Reference pixel array with varying sensitivities for time of flight (TOF) sensor |
US7889257B2 (en) | 2007-07-18 | 2011-02-15 | Mesa Imaging Ag | On-chip time-based digital conversion of pixel outputs |
US8072402B2 (en) * | 2007-08-29 | 2011-12-06 | Qualcomm Mems Technologies, Inc. | Interferometric optical modulator with broadband reflection characteristics |
US8068710B2 (en) * | 2007-12-07 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | Decoupled holographic film and diffuser |
EP2240798B1 (en) | 2008-01-30 | 2016-08-17 | Heptagon Micro Optics Pte. Ltd. | Adaptive neighborhood filtering (anf) system and method for 3d time of flight cameras |
WO2009102733A2 (en) * | 2008-02-12 | 2009-08-20 | Qualcomm Mems Technologies, Inc. | Integrated front light diffuser for reflective displays |
EP2316221A1 (en) | 2008-08-28 | 2011-05-04 | MESA Imaging AG | Demodulation pixel with daisy chain charge storage sites and method of operation therefor |
KR20100054540A (ko) * | 2008-11-14 | 2010-05-25 | 삼성전자주식회사 | 픽셀 회로, 광전 변환장치, 및 이를 포함하는 이미지 센싱 시스템 |
US9076709B2 (en) | 2009-05-05 | 2015-07-07 | Mesa Imaging Ag | 3D CCD-style imaging sensor with rolling readout |
US20100308209A1 (en) * | 2009-06-09 | 2010-12-09 | Mesa Imaging Ag | System for Charge-Domain Electron Subtraction in Demodulation Pixels and Method Therefor |
US9117712B1 (en) | 2009-07-24 | 2015-08-25 | Mesa Imaging Ag | Demodulation pixel with backside illumination and charge barrier |
US9000349B1 (en) | 2009-07-31 | 2015-04-07 | Mesa Imaging Ag | Sense node capacitive structure for time of flight sensor |
EP2284897B1 (en) | 2009-08-14 | 2021-06-30 | Heptagon Micro Optics Pte. Ltd. | Demodulation pixel incorporating majority carrier current, buried channel and high-low junction |
DE102009037596B4 (de) * | 2009-08-14 | 2014-07-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Pixelstruktur, System und Verfahren zur optischen Abstandsmessung sowie Steuerschaltung für die Pixelstruktur |
US8754939B2 (en) | 2009-11-09 | 2014-06-17 | Mesa Imaging Ag | Multistage demodulation pixel and method |
KR101646908B1 (ko) * | 2009-11-27 | 2016-08-09 | 삼성전자주식회사 | 거리 정보를 감지할 수 있는 이미지 센서 |
EP2521926B1 (en) * | 2010-01-06 | 2020-07-29 | Heptagon Micro Optics Pte. Ltd. | Demodulation sensor with separate pixel and storage arrays |
KR20110093212A (ko) * | 2010-02-12 | 2011-08-18 | 삼성전자주식회사 | 이미지 센서의 픽셀 및 픽셀 동작 방법 |
US9410800B1 (en) | 2010-08-02 | 2016-08-09 | Heptagon Micro Optics Pte. Ltd. | 3D TOF camera with masked illumination |
US8670171B2 (en) | 2010-10-18 | 2014-03-11 | Qualcomm Mems Technologies, Inc. | Display having an embedded microlens array |
GB2486208A (en) * | 2010-12-06 | 2012-06-13 | Melexis Tessenderlo Nv | Demodulation sensor and method for detection and demodulation of temporarily modulated electromagnetic fields for use in Time of Flight applications. |
US8902484B2 (en) | 2010-12-15 | 2014-12-02 | Qualcomm Mems Technologies, Inc. | Holographic brightness enhancement film |
WO2013041949A1 (en) | 2011-09-20 | 2013-03-28 | Mesa Imaging Ag | Time of flight sensor with subframe compression and method |
DE102012109129B4 (de) | 2011-09-27 | 2017-06-29 | Heptagon Micro Optics Pte. Ltd. | Sensor-Pixelanordnung und getrennte Anordnung einer Speicherung und Akkumulation mit parallelem Erfassen und Auslesen |
AU2013237141B2 (en) | 2012-03-20 | 2016-05-12 | Ams-Osram Asia Pacific Pte. Ltd. | PN-structured gate demodulation pixel |
FR3021458B1 (fr) * | 2014-05-23 | 2016-07-01 | Commissariat Energie Atomique | Inverseur cmos photonique |
KR20160014418A (ko) | 2014-07-29 | 2016-02-11 | 삼성전자주식회사 | 유저 인터페이스 장치 및 유저 인터페이스 방법 |
GB201421512D0 (en) * | 2014-12-03 | 2015-01-14 | Melexis Technologies Nv | A semiconductor pixel unit for simultaneously sensing visible light and near-infrared light, and a semiconductor sensor comprising same |
US10840282B2 (en) | 2015-10-21 | 2020-11-17 | Ams Sensors Singapore Pte. Ltd. | Demodulation pixel devices, arrays of pixel devices and optoelectronic devices incorporating the same |
DE102016123258B4 (de) | 2016-12-01 | 2018-07-19 | Leica Microsystems Cms Gmbh | Lumineszenzdetektoranordnung, Fluoreszenzmikroskop und Verfahren zum Detektieren eines Lumineszenzsignals |
US10016137B1 (en) | 2017-11-22 | 2018-07-10 | Hi Llc | System and method for simultaneously detecting phase modulated optical signals |
US10335036B2 (en) | 2017-11-22 | 2019-07-02 | Hi Llc | Pulsed ultrasound modulated optical tomography using lock-in camera |
US10219700B1 (en) | 2017-12-15 | 2019-03-05 | Hi Llc | Systems and methods for quasi-ballistic photon optical coherence tomography in diffusive scattering media using a lock-in camera detector |
US10368752B1 (en) | 2018-03-08 | 2019-08-06 | Hi Llc | Devices and methods to convert conventional imagers into lock-in cameras |
KR102624984B1 (ko) | 2018-03-21 | 2024-01-15 | 삼성전자주식회사 | ToF 센서와 이를 이용한 3차원 영상 장치 및 3차원 영상 장치의 구동 방법 |
US11206985B2 (en) | 2018-04-13 | 2021-12-28 | Hi Llc | Non-invasive optical detection systems and methods in highly scattering medium |
US11857316B2 (en) | 2018-05-07 | 2024-01-02 | Hi Llc | Non-invasive optical detection system and method |
US11237687B2 (en) * | 2019-01-25 | 2022-02-01 | Samsung Electronics Co., Ltd. | Systems and methods for touch detection using electric field tomography through resistive sheet |
WO2022122822A1 (en) * | 2020-12-11 | 2022-06-16 | Ams-Osram Ag | Photodiode device with enhanced characteristics |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3714522A (en) * | 1968-11-14 | 1973-01-30 | Kogyo Gijutsuin Agency Of Ind | Semiconductor device having surface electric-field effect |
GB1559312A (en) * | 1976-08-26 | 1980-01-16 | Philips Nv | Photosensitive device arrangements and systems and photosensitive elements therefor |
JPS57136870A (en) | 1981-02-17 | 1982-08-24 | Fujitsu Ltd | Solid image pickup device |
US4388532A (en) * | 1981-04-27 | 1983-06-14 | Eastman Kodak Company | Solid state image sensor with image sensing elements having charge coupled photocapacitors and a floating gate amplifier |
WO1985004986A1 (en) * | 1984-04-25 | 1985-11-07 | Josef Kemmer | Depleted semi-conductor element with a potential minimum for majority carriers |
US5028554A (en) * | 1986-07-03 | 1991-07-02 | Oki Electric Industry Co., Ltd. | Process of fabricating an MIS FET |
US4951106A (en) * | 1988-03-24 | 1990-08-21 | Tektronix, Inc. | Detector device for measuring the intensity of electromagnetic radiation |
US5528643A (en) * | 1989-11-13 | 1996-06-18 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
IL96623A0 (en) | 1989-12-26 | 1991-09-16 | Gen Electric | Low capacitance,large area semiconductor photodetector and photodetector system |
US5208477A (en) * | 1990-12-31 | 1993-05-04 | The United States Of America As Represented By The Secretary Of The Navy | Resistive gate magnetic field sensor |
DE4440613C1 (de) | 1994-11-14 | 1996-07-25 | Leica Ag | Vorrichtung und Verfahren zur Detektion und Demodulation eines intensitätsmodulierten Strahlungsfeldes |
CZ300055B6 (cs) * | 1996-09-05 | 2009-01-21 | Zpusob zjištování fázových a/nebo amplitudových informací o elektromagnetické vlne, fotonový smešovací prvek, usporádání smešovacích prvku a zarízeník provádení tohoto zpusobu | |
DE19821974B4 (de) * | 1998-05-18 | 2008-04-10 | Schwarte, Rudolf, Prof. Dr.-Ing. | Vorrichtung und Verfahren zur Erfassung von Phase und Amplitude elektromagnetischer Wellen |
EP1152261A1 (en) | 2000-04-28 | 2001-11-07 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Device and method for spatially resolved photodetection and demodulation of modulated electromagnetic waves |
US7268815B1 (en) * | 2000-10-06 | 2007-09-11 | Cypress Semiconductor Corporation (Belgium) Bvba | Differential readout of a pixel array with elimination of pixel- and column-wise fixed pattern noise |
US6531331B1 (en) * | 2002-07-16 | 2003-03-11 | Sandia Corporation | Monolithic integration of a MOSFET with a MEMS device |
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2002
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- 2003-06-05 EP EP03730350A patent/EP1516165B1/en not_active Expired - Lifetime
- 2003-06-05 AU AU2003241032A patent/AU2003241032A1/en not_active Abandoned
- 2003-06-05 US US10/518,963 patent/US7498621B2/en not_active Expired - Lifetime
- 2003-06-05 WO PCT/GB2003/002434 patent/WO2004001354A1/en active Application Filing
- 2003-06-05 DE DE60328605T patent/DE60328605D1/de not_active Expired - Lifetime
- 2003-06-05 AT AT03730350T patent/ATE438090T1/de not_active IP Right Cessation
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- 2009-01-19 US US12/355,832 patent/US8299504B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011065167A1 (ja) | 2009-11-24 | 2011-06-03 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
US9134423B2 (en) | 2009-11-24 | 2015-09-15 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
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GB0214257D0 (en) | 2002-07-31 |
US20060108611A1 (en) | 2006-05-25 |
WO2004001354A1 (en) | 2003-12-31 |
DE60328605D1 (de) | 2009-09-10 |
US7498621B2 (en) | 2009-03-03 |
EP1516165B1 (en) | 2009-07-29 |
US20090121308A1 (en) | 2009-05-14 |
GB2389960A (en) | 2003-12-24 |
US8299504B2 (en) | 2012-10-30 |
AU2003241032A1 (en) | 2004-01-06 |
ATE438090T1 (de) | 2009-08-15 |
EP1516165A1 (en) | 2005-03-23 |
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