JP2005518552A - 二次電子顕微鏡法と収束イオンビーム・システムを使用した半導体製造方法のフィードフォワードおよびフィードバック制御 - Google Patents

二次電子顕微鏡法と収束イオンビーム・システムを使用した半導体製造方法のフィードフォワードおよびフィードバック制御 Download PDF

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JP2005518552A
JP2005518552A JP2003572079A JP2003572079A JP2005518552A JP 2005518552 A JP2005518552 A JP 2005518552A JP 2003572079 A JP2003572079 A JP 2003572079A JP 2003572079 A JP2003572079 A JP 2003572079A JP 2005518552 A JP2005518552 A JP 2005518552A
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sample
crystal
ion beam
crystallographic
data
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Japanese (ja)
Inventor
ホック，エリック，シー．
ケンプシャル，ブリアン
シュワルツ，スチーヴ
スチーヴィー，エフ．，エー．
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Agere Systems LLC
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Agere Systems LLC
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • General Factory Administration (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2003572079A 2002-02-22 2003-02-24 二次電子顕微鏡法と収束イオンビーム・システムを使用した半導体製造方法のフィードフォワードおよびフィードバック制御 Pending JP2005518552A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35922202P 2002-02-22 2002-02-22
PCT/US2003/007264 WO2003073481A2 (en) 2002-02-22 2003-02-24 Feedforward and feedback control of semiconductor fabrication process using secondary electron microscopy and a focused ion beam system

Publications (1)

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JP2005518552A true JP2005518552A (ja) 2005-06-23

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JP2003572079A Pending JP2005518552A (ja) 2002-02-22 2003-02-24 二次電子顕微鏡法と収束イオンビーム・システムを使用した半導体製造方法のフィードフォワードおよびフィードバック制御
JP2003572051A Expired - Lifetime JP4737933B2 (ja) 2002-02-22 2003-02-24 加工工程のモニタおよび制御システムおよび制御方法

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JP2003572051A Expired - Lifetime JP4737933B2 (ja) 2002-02-22 2003-02-24 加工工程のモニタおよび制御システムおよび制御方法

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US (1) US7972440B2 (cg-RX-API-DMAC7.html)
JP (2) JP2005518552A (cg-RX-API-DMAC7.html)
KR (3) KR100979071B1 (cg-RX-API-DMAC7.html)
AU (2) AU2003225728A1 (cg-RX-API-DMAC7.html)
GB (2) GB2405745A (cg-RX-API-DMAC7.html)
WO (2) WO2003073448A2 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
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JP2011159483A (ja) * 2010-01-29 2011-08-18 Sii Nanotechnology Inc 電子顕微鏡及び試料分析方法
KR20240122104A (ko) * 2023-02-03 2024-08-12 권용은 표준 시료를 포함하는 xrd 보정 분석 홀더

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JP7472111B2 (ja) * 2018-09-24 2024-04-22 アプライド マテリアルズ インコーポレイテッド Ｃｍｐプロセス制御アルゴリズムへの入力としてのマシンビジョン
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CN110712094B (zh) * 2019-09-06 2021-07-23 中国兵器科学研究院宁波分院 降低离子束抛光光学元件表面污染的方法
JP7188373B2 (ja) * 2019-12-11 2022-12-13 トヨタ自動車株式会社 データ解析システム及びデータ解析方法
CN111421390B (zh) * 2020-02-29 2021-10-12 湖南大学 一种制造微纳米台阶阵列结构的离子束抛光加工方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159483A (ja) * 2010-01-29 2011-08-18 Sii Nanotechnology Inc 電子顕微鏡及び試料分析方法
KR20240122104A (ko) * 2023-02-03 2024-08-12 권용은 표준 시료를 포함하는 xrd 보정 분석 홀더
KR102924593B1 (ko) 2023-02-03 2026-02-06 권용은 표준 시료를 포함하는 xrd 보정 분석 홀더

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Publication number Publication date
JP4737933B2 (ja) 2011-08-03
WO2003073448A3 (en) 2004-07-15
GB0418786D0 (en) 2004-09-22
KR20030069892A (ko) 2003-08-27
WO2003073481A3 (en) 2004-06-03
KR20040088517A (ko) 2004-10-16
KR20050004786A (ko) 2005-01-12
US20060048697A1 (en) 2006-03-09
AU2003217630A1 (en) 2003-09-09
GB2405745A (en) 2005-03-09
US7972440B2 (en) 2011-07-05
AU2003217630A8 (en) 2003-09-09
GB2402809A (en) 2004-12-15
KR100979658B1 (ko) 2010-09-02
WO2003073481A2 (en) 2003-09-04
WO2003073448A2 (en) 2003-09-04
GB2402809B (en) 2006-09-20
AU2003225728A1 (en) 2003-09-09
KR100979071B1 (ko) 2010-08-31
GB0418787D0 (en) 2004-09-22
AU2003225728A8 (en) 2003-09-09
JP2005518614A (ja) 2005-06-23

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