JP2005509180A5 - - Google Patents

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Publication number
JP2005509180A5
JP2005509180A5 JP2002582085A JP2002582085A JP2005509180A5 JP 2005509180 A5 JP2005509180 A5 JP 2005509180A5 JP 2002582085 A JP2002582085 A JP 2002582085A JP 2002582085 A JP2002582085 A JP 2002582085A JP 2005509180 A5 JP2005509180 A5 JP 2005509180A5
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JP
Japan
Prior art keywords
solvent component
solvent
photoresist composition
ethyl
component
Prior art date
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Pending
Application number
JP2002582085A
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Japanese (ja)
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JP2005509180A (en
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Publication date
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Priority claimed from PCT/US2002/008127 external-priority patent/WO2002084401A2/en
Publication of JP2005509180A publication Critical patent/JP2005509180A/en
Publication of JP2005509180A5 publication Critical patent/JP2005509180A5/ja
Pending legal-status Critical Current

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Claims (10)

フッ素化樹脂、光活性成分、および溶媒成分を含んでなり、前記溶媒成分が少なくとも２つの明確に区別できる溶媒の混合物を含んでなり、前記明確に区別できる溶媒の１つはケトン部位を含有せず、メチルエチルケトンとクロロベンゼンからなる溶媒成分は除外されるフォトレジスト組成物。   Comprising a fluorinated resin, a photoactive component, and a solvent component, wherein the solvent component comprises a mixture of at least two distinct solvents, wherein one of the distinct solvents includes a ketone moiety. A photoresist composition that excludes a solvent component composed of methyl ethyl ketone and chlorobenzene. フッ素化樹脂、光活性成分および溶媒成分を含んでなり、前記溶媒成分が３−ヘプタノン；エチル−ｎ−アミル−ケトン；エチレングリコールエチルエーテル；アミルアセテート；メチルイソ−アミルケトン；エチレングリコールメチルエーテルアセテート；メチルアミルアセテート；エチレングリコールメチルエーテルアセテート；エチル−ｎ−ブチルケトン；イソ−ブチルイソブチレート；２−メチル−ｌ−ペンタノール（ヘキサノール）；エチレングリコールプロピルエーテル；プロピレングリコールｔ−ブチルエーテル；メチルカプロエート；エチルカプロエート（エチルヘキサノエート）；クメン（イソプロピルベンゼン）；キシレン；アニソール；エチレングリコールエチルエーテルアセテート；１−トリデカノール；シクロヘキサノール；メシチレン；ヘキシルアセテート；ジエチレングリコールジメチルエーテル（ジグライム）；ジイソブチルケトン；ジ−ｎ−プロピルカーボネート；ジアセトンアルコール；エチレングリコールブチルエーテル；およびプロピレングリコールブチルエーテルからなる群から選ばれる溶媒を含んでなるフォトレジスト組成物。 Comprising a fluorinated resin, a photoactive component and a solvent component, wherein the solvent component is 3-heptanone; ethyl-n-amyl-ketone; ethylene glycol ethyl ether; amyl acetate; methyl iso-amyl ketone; Ethyl glycol methyl ether acetate; ethyl-n-butyl ketone; iso-butyl isobutyrate; 2-methyl-1-pentanol (hexanol); ethylene glycol propyl ether; propylene glycol t-butyl ether ; methyl caproate; Ethyl caproate (ethyl hexanoate); cumene (isopropylbenzene); xylene; anisole; ethylene glycol ethyl ether acetate; 1-tridecanol; Photoresist composition comprising a solvent selected from the group consisting of: sanol; mesitylene; hexyl acetate; diethylene glycol dimethyl ether (diglyme); diisobutyl ketone; di-n-propyl carbonate; diacetone alcohol; ethylene glycol butyl ether; . フッ素化樹脂、光活性成分、および溶媒成分を含んでなり、前記溶媒成分が少なくとも３つの明確に区別できる溶媒の混合物を含んでなるフォトレジスト組成物。   A photoresist composition comprising a fluorinated resin, a photoactive component, and a solvent component, wherein the solvent component comprises a mixture of at least three distinct solvents. フッ素化樹脂、光活性成分、および溶媒成分を含んでなり、前記溶媒成分がハロゲン化溶媒を含んでなり、クロロベンゼンとメチルエチルケトンからなる溶媒成分は除外されるフォトレジスト組成物。   A photoresist composition comprising a fluorinated resin, a photoactive component, and a solvent component, wherein the solvent component comprises a halogenated solvent, and a solvent component comprising chlorobenzene and methyl ethyl ketone is excluded. フッ素化樹脂、光活性成分、および溶媒成分を含んでなり、前記溶媒成分が水を含んでなるフォトレジスト組成物。   A photoresist composition comprising a fluorinated resin, a photoactive component, and a solvent component, wherein the solvent component comprises water. フッ素化樹脂、光活性成分、および溶媒成分を含んでなり、前記溶媒成分がエチルラクテートを含んでなるフォトレジスト組成物。   A photoresist composition comprising a fluorinated resin, a photoactive component, and a solvent component, wherein the solvent component comprises ethyl lactate. フッ素化樹脂、光活性成分、および溶媒成分を含んでなり、前記溶媒成分がフッ素化溶媒を含んでなるフォトレジスト組成物。   A photoresist composition comprising a fluorinated resin, a photoactive component, and a solvent component, wherein the solvent component comprises a fluorinated solvent. フッ素化樹脂、光活性成分、および溶媒成分を含んでなり、前記溶媒成分が室温共沸物を形成することができる少なくとも２つの溶媒を含んでなるフォトレジスト組成物。   A photoresist composition comprising a fluorinated resin, a photoactive component, and a solvent component, wherein the solvent component comprises at least two solvents capable of forming a room temperature azeotrope. 請求項１から８のいずれか１項のフォトレジスト組成物のコーティング層を基板に塗布し；
前記フォトレジストコーティング層を活性化放射線で露光し、そして前記露光されたレジスト層を現像する
ことを含んでなるフォトレジストレリーフ像を形成する方法。 Applying a coating layer of the photoresist composition of any one of claims 1 to 8 to a substrate;
Exposing the photoresist coating layer with activating radiation and developing the exposed resist layer to form a photoresist relief image. 請求項１から８のいずれか１項のフォトレジスト組成物のコーティング層をその上に有する基板を含んでなる製造物品。 An article of manufacture comprising a substrate having thereon a coating layer of the photoresist composition of any one of claims 1-8 .
JP2002582085A 2001-03-22 2002-03-15 Solvent and photoresist composition for short wavelength imaging Pending JP2005509180A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27817001P 2001-03-22 2001-03-22
PCT/US2002/008127 WO2002084401A2 (en) 2001-03-22 2002-03-15 Photoresist compositions comprising solvents for short wavelength imaging

Publications (2)

Publication Number Publication Date
JP2005509180A JP2005509180A (en) 2005-04-07
JP2005509180A5 true JP2005509180A5 (en) 2005-12-22

Family

ID=23063955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002582085A Pending JP2005509180A (en) 2001-03-22 2002-03-15 Solvent and photoresist composition for short wavelength imaging

Country Status (7)

Country Link
EP (1) EP1377879A2 (en)
JP (1) JP2005509180A (en)
KR (1) KR20040062877A (en)
CN (1) CN100378578C (en)
AU (1) AU2002257066A1 (en)
TW (1) TWI308256B (en)
WO (1) WO2002084401A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140345A (en) * 2001-11-02 2003-05-14 Fuji Photo Film Co Ltd Positive resist composition
US7335454B2 (en) 2001-12-13 2008-02-26 Fujifilm Corporation Positive resist composition
CN105334697B (en) * 2015-12-08 2019-10-11 深圳市华星光电技术有限公司 The production method of photoetching compositions and colored filter
CN106444281A (en) * 2016-09-22 2017-02-22 京东方科技集团股份有限公司 Photoresist and etching method
CN113296360B (en) * 2021-05-21 2024-06-14 上海邃铸科技有限公司 Acid inhibitor for photoresist composition, preparation method and photoresist composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229473A (en) * 1989-07-07 1993-07-20 Daikin Industries Ltd. Fluorine-containing copolymer and method of preparing the same
DE4319178C2 (en) * 1992-06-10 1997-07-17 Fujitsu Ltd Resist composition containing a polymer material and an acid generator
JP3804138B2 (en) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 Radiation sensitive resin composition for ArF excimer laser irradiation
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
AU4678100A (en) * 1999-05-04 2000-11-17 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography

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