JP2005353792A - Resin sealing semiconductor device - Google Patents

Resin sealing semiconductor device Download PDF

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Publication number
JP2005353792A
JP2005353792A JP2004172152A JP2004172152A JP2005353792A JP 2005353792 A JP2005353792 A JP 2005353792A JP 2004172152 A JP2004172152 A JP 2004172152A JP 2004172152 A JP2004172152 A JP 2004172152A JP 2005353792 A JP2005353792 A JP 2005353792A
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Prior art keywords
resin
semiconductor device
board
metal plate
substrate
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Japanese (ja)
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Seiji Fujiwara
誠司 藤原
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2004172152A priority Critical patent/JP2005353792A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin sealing semiconductor device preventing the deterioration of heat-dissipating properties and having even excellent shielding characteristics in the semiconductor device coated with a packaging resin having an uneven shape. <P>SOLUTION: In the resin sealing semiconductor device 1 in a form in the operation, a semiconductor bare chip 6 coated with an epoxy resin 9, and a surface mounting part 8 such as a chip capacitor; a chip resistor or the like are mounted on a specified wiring pattern on a glass epoxy board 10, and the packaging resin 12 for an insulation protection is formed on a lead terminal 13 and the board containing these parts. An aluminum plate 2 with an opening section is fitted around the packaging resin 12, and the inwall section of the aluminum plate 2 is coated with a resin 4 having a high elasticity and a high thermal conductivity. The resin 4 is buried between the aluminum plate 2 and the packaging resin 12 when the board 10 sealed with the packaging resin 12 is inserted from the opening section. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体ベアチップもしくは半導体パッケージ品と表面実装部品とを同一基板上に実装してなる樹脂封止型半導体装置に関し、高出力特性を得ることが安価でかつ容易に実現できかつスイッチングによる自己発振もしくは外来雑音からシールドできる半導体装置に関するものである。   The present invention relates to a resin-encapsulated semiconductor device in which a semiconductor bare chip or semiconductor package product and a surface-mounted component are mounted on the same substrate. The present invention relates to a semiconductor device capable of shielding from oscillation or external noise.

半導体ベアチップもしくはパッケージに納められた半導体チップと表面実装部品とを同一基板上に実装してなる樹脂封止型半導体装置において、半導体チップの動作時の発熱によって、半導体チップ自体の特性変動だけでなく、その近傍の部品にも悪影響を与える恐れがある。よって、上記の樹脂封止型半導体装置においてはいかに放熱性をよくするかが重要となっている。   In a resin-encapsulated semiconductor device in which a semiconductor chip housed in a semiconductor bare chip or package and a surface mount component are mounted on the same substrate, not only the characteristic variation of the semiconductor chip itself due to heat generated during operation of the semiconductor chip There is also a risk of adversely affecting nearby components. Therefore, in the above resin-encapsulated semiconductor device, how to improve heat dissipation is important.

従来、熱対策として、その中で熱伝導性の高い基板を使用し半導体チップの熱による影響を軽減している。特に基板材質が金属である場合には放熱性は非常に高いが、上記基板には多数の部品を実装し、かつ各部品間を配線パターンで接続する必要があるため、このような配線パターンを容易に形成できる樹脂基板やセラミック基板などを用いることが多い。   Conventionally, as a countermeasure against heat, a substrate having high thermal conductivity is used to reduce the influence of the heat of the semiconductor chip. Especially when the board material is metal, the heat dissipation is very high, but it is necessary to mount many parts on the board and connect each part with a wiring pattern. Resin substrates and ceramic substrates that can be easily formed are often used.

しかし、これら材料では、金属と比べて放熱性は悪いため、基板表面から裏面側にスルーホールなどを設けて基板裏面側に配置された金属放熱板と熱的に接触させ、放熱性の向上を図る方法もあるが、それにも限界がある。   However, since these materials have poor heat dissipation compared to metals, through holes are provided from the substrate surface to the back side to make thermal contact with the metal heat sink arranged on the back side of the substrate to improve heat dissipation. There are ways to do this, but there are limitations.

そこでさらに放熱性を良くするためには、樹脂封止型半導体装置を保護するための外装樹脂に金属板やヒートシンク等を密着させて設ける方法がある。   Therefore, in order to further improve the heat dissipation, there is a method in which a metal plate, a heat sink or the like is provided in close contact with an exterior resin for protecting the resin-encapsulated semiconductor device.

しかし、上記したように樹脂封止型半導体装置には電子部品を多数実装しているので、外装樹脂を形成するために成型プレス等の機械的ダメージを与える方法は使用できない。よって、粉体塗装やディッピング工法にて樹脂成型が行われるが、このような方法では、樹脂の外形に凹凸が発生しやすい。また、部品を実装した状態での基板の表面形状は段差等が大きく、その間を樹脂で覆うため上記した外形の凹凸はさらに拡大されてしまう。   However, since a large number of electronic components are mounted on the resin-encapsulated semiconductor device as described above, a method of giving mechanical damage such as a molding press to form the exterior resin cannot be used. Therefore, resin molding is performed by powder coating or dipping, but in such a method, irregularities are likely to occur on the outer shape of the resin. Further, the surface shape of the substrate in a state where the components are mounted has a large level difference, and the above-described unevenness of the outer shape is further enlarged because the space is covered with resin.

放熱性を上げるためには、外装樹脂に金属板を密着させなければならないが、上述したように外装樹脂形状に凹凸が発生しやすいため、単純に金属板を密着させたのでは隙間が多く接触面積が大きく取れないため放熱性はさほど向上しない。これを回避するために、金属板との隙間にシリコン樹脂などのグリスを注入する方法もあるが、微細な隙間に全て樹脂を回り込ませることは困難である。   In order to improve heat dissipation, the metal plate must be in close contact with the exterior resin. However, as described above, irregularities are likely to occur in the exterior resin shape, so there are many gaps if the metal plate is simply in close contact. Since the area is not large, the heat dissipation is not so improved. In order to avoid this, there is a method of injecting grease such as silicon resin into the gap with the metal plate, but it is difficult to wrap the resin all around the minute gap.

また、上記の放熱の問題以外に半導体チップから発生する輻射雑音や外来雑音の影響も問題である。   In addition to the above-mentioned problem of heat dissipation, the influence of radiation noise and external noise generated from the semiconductor chip is also a problem.

図5は従来技術における樹脂封止型半導体装置の断面図であり、図6はその透過斜視図である(例えば特許文献1参照)。   FIG. 5 is a cross-sectional view of a conventional resin-encapsulated semiconductor device, and FIG. 6 is a transparent perspective view thereof (see, for example, Patent Document 1).

図5、図6において、回路基板21には樹脂封止された半導体素子22および受動素子23が実装され、そして回路基板21の端子取付部にはリード端子24が接続されている。回路基板21は金属ケース25で覆われ、そして回路基板21の両端に設けたアースパターン21aと金属ケース25がはんだで接続されている。また、半導体素子22の外装樹脂と金属ケース25との間には金属板26が挿入され、樹脂面と金属ケース25のそれぞれに密着している。また、半導体素子22の封止樹脂と金属板26とは熱伝導性のよい樹脂27で接着されている。さらに、金属ケース25の金属板26上の部分には、金属板26より小さな穴25aをあけ、金属ケース25の穴25aと金属板26は、はんだ28により接続されている。   5 and 6, a resin-sealed semiconductor element 22 and a passive element 23 are mounted on a circuit board 21, and a lead terminal 24 is connected to a terminal mounting portion of the circuit board 21. The circuit board 21 is covered with a metal case 25, and the ground pattern 21a provided at both ends of the circuit board 21 and the metal case 25 are connected by solder. Further, a metal plate 26 is inserted between the exterior resin of the semiconductor element 22 and the metal case 25, and is in close contact with each of the resin surface and the metal case 25. Further, the sealing resin of the semiconductor element 22 and the metal plate 26 are bonded with a resin 27 having good thermal conductivity. Further, a hole 25 a smaller than the metal plate 26 is formed in a portion on the metal plate 26 of the metal case 25, and the hole 25 a of the metal case 25 and the metal plate 26 are connected by solder 28.

この従来例によれば、半導体素子22の封止樹脂と金属ケース25との間に金属板26を挿入することにより、半導体素子22より発生される熱が、金属板26から金属ケース25へ伝わり、金属ケース25外の空気中へ放熱される。また金属ケース25により外来雑音をシールドでき、金属板26によって半導体素子22から発生する輻射雑音も抑制できる。このようにして、シールド効果を保ちつつ、半導体素子22の温度を使用温度範囲以下に抑えることが可能となる。
特開平6−97686号公報
According to this conventional example, by inserting the metal plate 26 between the sealing resin of the semiconductor element 22 and the metal case 25, the heat generated from the semiconductor element 22 is transmitted from the metal plate 26 to the metal case 25. The heat is dissipated into the air outside the metal case 25. Further, the external noise can be shielded by the metal case 25, and the radiation noise generated from the semiconductor element 22 by the metal plate 26 can also be suppressed. In this way, it is possible to keep the temperature of the semiconductor element 22 below the operating temperature range while maintaining the shielding effect.
JP-A-6-97686

しかしながら、上記特許文献1に記載された従来技術では、金属ケース25と、金属板26とをはんだで接着させる必要であり、また樹脂27と金属板26に接着剤が必要であり、形成方法が容易でない。さらに樹脂27の形成方法も面接続できるよう配慮しなければ効果を発揮できないため、樹脂27の形状と半導体素子22の形状も制限される。   However, in the prior art described in Patent Document 1, it is necessary to bond the metal case 25 and the metal plate 26 with solder, and an adhesive is required for the resin 27 and the metal plate 26. Not easy. Furthermore, since the effect cannot be exerted unless the formation method of the resin 27 is also considered so that surface connection is possible, the shape of the resin 27 and the shape of the semiconductor element 22 are also limited.

本発明は、上記問題点を解決し、平坦でない形状を有する外装樹脂で覆われた半導体装置においても放熱性を向上させることができ、かつシールド特性も良好な樹脂封止型半導体装置を提供することを目的とする。   The present invention solves the above-described problems and provides a resin-encapsulated semiconductor device that can improve heat dissipation even in a semiconductor device covered with an exterior resin having a non-flat shape and has good shielding characteristics. For the purpose.

上記課題を解決するため、本発明の樹脂封止型半導体装置は、半導体素子および受動部品等が基板上に実装され、前記半導体素子および受動部品等を含む前記基板を樹脂で覆った樹脂型半導体装置であって、前記樹脂で覆われた前記基板のうち前記基板から延びるリード端子の近傍を除く部分が、開口部を有する金属板によってさらに覆われており、前記金属板の内壁部は高弾性かつ高熱伝導性を有する樹脂で覆われていることを特徴とする。   In order to solve the above-described problems, a resin-encapsulated semiconductor device according to the present invention includes a resin-type semiconductor in which a semiconductor element and passive components are mounted on a substrate, and the substrate including the semiconductor elements and passive components is covered with a resin. In the apparatus, a portion of the substrate covered with the resin excluding the vicinity of a lead terminal extending from the substrate is further covered with a metal plate having an opening, and the inner wall portion of the metal plate is highly elastic. And it is covered with resin which has high thermal conductivity.

前記金属板において、前記開口部は外側に折り曲げられており、前記折り曲げ部分は、前記樹脂型半導体装置をボードに実装するときの支持部であることが好ましい。   In the metal plate, it is preferable that the opening is bent outward, and the bent portion is a support portion when the resin-type semiconductor device is mounted on a board.

前記折り曲げ部分の底部とボードのグランドとをはんだ材で接着して接地することが好ましい。   It is preferable that the bottom of the bent portion and the ground of the board are bonded with a solder material to be grounded.

前記金属板の外壁に黒色に染色された金属めっきが施されていることがさらに好ましい。   It is more preferable that the outer wall of the metal plate is subjected to black metal plating.

本発明によれば、回路実装基板を封止する樹脂と、放熱板となる金属板との密着性を上げるために、柔軟に形状を変えられる高弾性高熱伝導性樹脂を内壁に備えた金属板で取り囲むように配置することにより、半導体素子から発した熱を効率よく放熱できるとともに、金属板をボードのグランドに接地することによりシールド効果も備えた半導体回路装置を容易に実現することができる。   According to the present invention, in order to increase the adhesion between a resin for sealing a circuit mounting board and a metal plate serving as a heat sink, a metal plate having a highly elastic and highly thermally conductive resin that can be flexibly changed in shape on the inner wall. By arranging them so as to surround them, it is possible to efficiently dissipate heat generated from the semiconductor elements, and to easily realize a semiconductor circuit device having a shielding effect by grounding the metal plate to the ground of the board.

以下、本発明の具体的な実施の形態について図面を参照しながら説明する。   Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.

図1は本発明の実施の形態における樹脂封止型半導体装置の平面図、図2はその側面図、図3は図1におけるA−A’部での断面図、図4は透過斜視図である。   1 is a plan view of a resin-encapsulated semiconductor device according to an embodiment of the present invention, FIG. 2 is a side view thereof, FIG. 3 is a cross-sectional view taken along line AA ′ in FIG. 1, and FIG. is there.

本実施の形態における樹脂封止型半導体装置1は、以下のように構成されている。   The resin-encapsulated semiconductor device 1 in the present embodiment is configured as follows.

厚さ約600μmのアルミナ96%素材のガラスエポキシ基板10上には、基板内部の銅板上に厚さ約15μmのレジスト層5を形成して選択的に電気配線を施している。厚さ約500μmの半導体ベアチップ6、チップコンデンサやチップ抵抗などの表面実装部品8を基板上の所定の配線パターン上に銀ペーストやはんだで接着し、また、半導体ベアチップ6と基板10とを直径28μmの金ワイヤー7で電気的に結合する。   On a glass epoxy substrate 10 made of 96% alumina having a thickness of about 600 μm, a resist layer 5 having a thickness of about 15 μm is formed on a copper plate inside the substrate, and electrical wiring is selectively applied. A semiconductor bare chip 6 having a thickness of about 500 μm and a surface mount component 8 such as a chip capacitor or a chip resistor are bonded to a predetermined wiring pattern on the substrate with silver paste or solder, and the semiconductor bare chip 6 and the substrate 10 are 28 μm in diameter. Are electrically coupled by the gold wire 7.

設計上、発熱が大きい箇所にはあらかじめ基板の表面から裏面まで貫通する0.3mm径のスルーホール11を設けておく。さらには耐湿性や放熱性などを向上するために半導体ベアチップ6を保護するエポキシ樹脂9、基板10をボード(図示せず)に接続するためのリード端子13、これらの部品を含む基板上に絶縁保護用の外装樹脂12が設けられている。   By design, a 0.3 mm diameter through hole 11 penetrating from the front surface to the back surface of the substrate is provided in advance at a location where heat generation is large. Furthermore, in order to improve moisture resistance, heat dissipation, etc., an epoxy resin 9 that protects the semiconductor bare chip 6, a lead terminal 13 for connecting the substrate 10 to a board (not shown), and insulation on the substrate including these components. A protective exterior resin 12 is provided.

また、外装樹脂12の周りを囲むように開口部を有するアルミ板2が設けられており、開口部を通してリード端子13が外部に延びている。さらにアルミ板2は開口部において外側に曲げられた形状となっている。このような形状は成型プレス等の簡便な方法で加工することができる。   An aluminum plate 2 having an opening is provided so as to surround the exterior resin 12, and the lead terminal 13 extends to the outside through the opening. Further, the aluminum plate 2 has a shape bent outward at the opening. Such a shape can be processed by a simple method such as a molding press.

アルミ板2の内壁部には高弾性かつ高熱伝導性を有する樹脂4が被着されており、外装樹脂12で囲むように封止されたエポキシ基板10を開口部から挿入するとアルミ板2と外装樹脂12との間を樹脂4が埋めるようになっている。さらにアルミ板2の外壁部は黒色に金属めっき3が施されている。金属めっき3の厚みは数十μm程度である。この金属めっきを施すことにより金属部分の体積を増加させ、熱伝導性を上げて放熱性を向上させることができる。   A resin 4 having high elasticity and high thermal conductivity is attached to the inner wall portion of the aluminum plate 2, and when the epoxy substrate 10 sealed so as to be surrounded by the exterior resin 12 is inserted from the opening, the aluminum plate 2 and the exterior The resin 4 is filled with the resin 12. Further, the outer wall portion of the aluminum plate 2 is black and has a metal plating 3 applied thereto. The thickness of the metal plating 3 is about several tens of μm. By applying this metal plating, the volume of the metal portion can be increased, the thermal conductivity can be increased, and the heat dissipation can be improved.

また、図2に示すように、アルミ板2は、その土台部(図2におけるB−B’部)が折り曲げて形成されており、その下部にはんだめっき14がなされている。このような構造にすることで、樹脂封止型半導体装置1をボードに実装する際に転倒しないようすることが可能となる。   As shown in FIG. 2, the aluminum plate 2 is formed by bending a base portion (B-B ′ portion in FIG. 2), and a solder plating 14 is formed on the lower portion thereof. With such a structure, it is possible to prevent the resin-encapsulated semiconductor device 1 from being overturned when mounted on a board.

また、樹脂封止型半導体装置1をボードに実装する際、アルミ板2の底部をボードのグランドに接地配線できるようにはんだペーストを形成しておき、ボードに実装するその他の部品と同時に、はんだリフロー工程で接着する。その後リード端子13とボードとをはんだフロー工程もしくははんだごてを用いて電気的結合させる。   Further, when the resin-encapsulated semiconductor device 1 is mounted on the board, a solder paste is formed so that the bottom of the aluminum plate 2 can be grounded to the board ground, and at the same time as other components mounted on the board, Adhere in the reflow process. Thereafter, the lead terminals 13 and the board are electrically coupled using a solder flow process or a soldering iron.

以上、本実施の形態によれば、樹脂で固めた回路実装基板に放熱板となるアルミ板を取り付ける際、アルミ板の内壁部に高弾性で高熱伝導性の樹脂を設けておくことにより、アルミ板と実装基板との熱的接触が良好に保たれ放熱性が格段に向上する。   As described above, according to the present embodiment, when an aluminum plate serving as a heat radiating plate is attached to a circuit mounting board solidified with a resin, aluminum is provided by providing a highly elastic and high thermal conductive resin on the inner wall portion of the aluminum plate. The thermal contact between the board and the mounting board is maintained well, and the heat dissipation is remarkably improved.

また、リード端子近傍を除いて回路実装基板をアルミ板で取り囲む構造になっているため、シールド効果が高く、特にボードのグランドにアルミ板の底部を接地するように実装する構成を採ることにより、完全なシールドが達成でき雑音が大幅に低減する。   In addition, since it has a structure that surrounds the circuit mounting board with an aluminum plate except for the vicinity of the lead terminal, the shielding effect is high, and by adopting a configuration in which the bottom of the aluminum plate is grounded to the ground of the board, in particular, Complete shielding can be achieved and noise is greatly reduced.

また本実施の形態において、樹脂封止型半導体装置1をボードに実装する際に、半導体装置をボード上で自立する状態に保つことができるため、表面実装部品と同様に機械による自動実装が可能となる。   In the present embodiment, when the resin-encapsulated semiconductor device 1 is mounted on the board, the semiconductor device can be maintained on the board so that it can be automatically mounted by a machine like a surface-mounted component. It becomes.

本発明の樹脂封止型半導体装置は、外装樹脂形状が製造上定まらない製品でも放熱性と輻射及び外来雑音をシールドできる効果を有し、スイッチング電源回路に用いられるAC−DCコンバータなどに有用である。   The resin-encapsulated semiconductor device of the present invention has the effect of shielding heat dissipation and radiation and external noise even in products whose exterior resin shape is not determined in production, and is useful for AC-DC converters used in switching power supply circuits, etc. is there.

本発明の実施の形態における樹脂封止型半導体装置の平面図Plan view of resin-encapsulated semiconductor device in an embodiment of the present invention 本発明の実施の形態における樹脂封止型半導体装置の側面図Side view of resin-encapsulated semiconductor device in an embodiment of the present invention 図1におけるA−A’部での断面図Sectional view taken along line A-A 'in FIG. 本発明の実施の形態における半樹脂封止型半導体装置の透過斜視図Transparent perspective view of semi-resin-sealed semiconductor device in an embodiment of the present invention 従来技術における樹脂封止型半導体装置の断面図Sectional view of resin-encapsulated semiconductor device in the prior art 従来技術における樹脂封止型半導体装置の透過斜視図Transparent perspective view of resin-encapsulated semiconductor device in the prior art

符号の説明Explanation of symbols

1 樹脂封止型半導体装置
2 アルミ板
3 金属めっき
4 高弾性、高熱伝導性樹脂
5 レジスト層
6 半導体ベアチップ
7 金ワイヤー
8 表面実装部品
9 エポキシ樹脂
10 ガラスエポキシ基板
11 スルーホール
12 外装樹脂
13 リード端子
14 はんだめっき
21 回路基板
21a アースパターン
22 半導体素子
23 受動素子
24 リード端子
25 金属ケース
25a 穴
26 金属板
27 樹脂
28 はんだ
DESCRIPTION OF SYMBOLS 1 Resin sealing type semiconductor device 2 Aluminum plate 3 Metal plating 4 High elasticity, high heat conductive resin 5 Resist layer 6 Semiconductor bare chip 7 Gold wire 8 Surface mount component 9 Epoxy resin 10 Glass epoxy board 11 Through hole 12 Exterior resin 13 Lead terminal DESCRIPTION OF SYMBOLS 14 Solder plating 21 Circuit board 21a Ground pattern 22 Semiconductor element 23 Passive element 24 Lead terminal 25 Metal case 25a Hole 26 Metal plate 27 Resin 28 Solder

Claims (4)

半導体素子および受動部品等が基板上に実装され、前記半導体素子および受動部品等を含む前記基板を樹脂で覆った樹脂封止型半導体装置であって、
前記樹脂で覆われた前記基板のうち前記基板から延びるリード端子の近傍を除く部分が、開口部を有する金属板によってさらに覆われており、
前記金属板の内壁部は高弾性かつ高熱伝導性を有する樹脂で覆われていることを特徴とする樹脂封止型半導体装置。
A resin-encapsulated semiconductor device in which a semiconductor element and a passive component are mounted on a substrate, and the substrate including the semiconductor element and the passive component is covered with a resin,
Of the substrate covered with the resin, a portion excluding the vicinity of a lead terminal extending from the substrate is further covered with a metal plate having an opening,
An inner wall portion of the metal plate is covered with a resin having high elasticity and high thermal conductivity.
前記金属板において、前記開口部は外側に折り曲げられており、前記折り曲げ部分は、前記樹脂封止型半導体装置をボードに実装するときの支持部であることを特徴とする請求項1記載の樹脂封止型半導体装置。 2. The resin according to claim 1, wherein in the metal plate, the opening is bent outward, and the bent portion is a support when the resin-encapsulated semiconductor device is mounted on a board. Sealed semiconductor device. 前記折り曲げ部分の底部とボードのグランドとをはんだ材で接着して接地することを特徴とする請求項2記載の樹脂封止型半導体装置。 3. The resin-encapsulated semiconductor device according to claim 2, wherein a bottom portion of the bent portion and a ground of the board are grounded by bonding with a solder material. 前記金属板の外壁に黒色に染色された金属めっきが施されていることを特徴とする請求項1ないし3のいずれかに記載の樹脂封止型半導体装置。 The resin-encapsulated semiconductor device according to any one of claims 1 to 3, wherein the outer wall of the metal plate is subjected to black metal plating.
JP2004172152A 2004-06-10 2004-06-10 Resin sealing semiconductor device Withdrawn JP2005353792A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
JP2004172152A JP2005353792A (en) 2004-06-10 2004-06-10 Resin sealing semiconductor device

Publications (1)

Publication Number Publication Date
JP2005353792A true JP2005353792A (en) 2005-12-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045067A (en) * 2008-08-08 2010-02-25 Panasonic Corp Mounting structure and electronic equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045067A (en) * 2008-08-08 2010-02-25 Panasonic Corp Mounting structure and electronic equipment

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