JP2005349430A - Laser beam machine - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laser beam machine capable of performing a stable resin joining, and being operated by an insulation type switching source. <P>SOLUTION: Working current with high speed intensity modulation applied is output from an E/O transmutation circuit 33 to a photo coupler 32, thus laser light with high speed intensity modulation applied is output from watt class one chip semiconductor laser 13, and further, variation in the output of the light is fed-back by a photodiode 28, and variation in the output of the light in accordance with variation in ambient temperature is compensated. In this way, stable resin joining can be performed to a resin in which the temperature difference between the melting point and the decomposition melting point is narrow. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a laser processing apparatus that is used in, for example, a lens fixing device for fitting a lens into a lens barrel and performs resin bonding or the like, and more particularly to a drive circuit thereof.

A driving circuit for the laser processing apparatus is disclosed in Non-Patent Document 1, for example.
A drive circuit of the disclosed laser processing apparatus is shown in FIG.
As shown in FIG. 9, includes a built-in photodiode (PD) and the semiconductor laser constructed from a laser element (LD), and the variable resistor R _V for adjusting the laser beam output, a monitor from the internal photodiode It is formed by a CW (continuous) operation APC circuit that controls the light output by current, and it is formed so that a constant laser light output can be obtained regardless of the temperature change by the control of this APC circuit.

Under this configuration, the laser light output is adjusted by first adjusting the variable resistor _RV to the maximum value, gradually increasing the output level of the power supply to the specified voltage, and then using a power meter or the like to adjust the light output. While monitoring, the variable resistance _RV is adjusted to a small value to increase the laser light output from the semiconductor laser.
“Toshiba Semiconductor Laser Q & A Manual” published by Toshiba Corporation, 1989, p. 17

  However, according to the configuration of the drive circuit of the conventional laser processing apparatus, the laser beam output is a CW (continuous) output, so that if the intensity of the laser beam fluctuates due to the characteristics of the operating APC circuit or the characteristics of the semiconductor laser, the melting point When a resin having a small temperature difference between the melting point and the melting point is bonded, there is a problem that the resin is decomposed and cannot be bonded.

Further, when an inexpensive isolated switching power supply that is usually marketed as a power supply is used, there is a risk that the semiconductor laser may be damaged due to a lot of noise.
Therefore, an object of the present invention is to provide a laser processing apparatus that can perform stable resin bonding and that can be operated by an insulating switching power supply.

  In order to achieve the above-described object, a laser processing apparatus according to claim 1 of the present invention emits a line-shaped laser beam for dissolving a substance toward a substance having a small temperature difference between a melting point and a decomposition melting point or a boiling point. A laser processing apparatus comprising: a one-chip semiconductor laser light source that emits about an axis center; and a laser driving circuit that controls the intensity of the laser light emitted from the one-chip semiconductor laser light source, wherein the laser driving circuit includes: It is formed of a light conversion element that receives the laser light emitted from the one-chip semiconductor laser light source and converts it into an electrical signal, a light emitting element and a light receiving element, and the light receiving element is connected in series with the light converting element. And an electro-optical conversion element connected in parallel to the one-chip semiconductor laser light source together with the optical conversion element, and supplied to the one-chip semiconductor laser light source The light conversion element connected to a connection point between the driving element of the one-chip semiconductor laser light source for controlling a current to be generated, the light conversion element and the light receiving element of the electro-optical conversion element, and accompanying the change of the laser light An output control circuit for controlling the intensity of the laser beam by driving the drive element according to a change in the voltage at the connection point caused by the change in the electrical signal of the electric signal; An operating current subjected to high-speed intensity modulation is input to the light emitting element of the light conversion element, the voltage at the connection point is changed via the light receiving element, and the drive is performed by the output control circuit according to the change in the voltage at the connection point. The element is driven, and the laser light output from the one-chip semiconductor laser light source is subjected to high-speed intensity modulation based on the command data of the intensity of the laser light.

  According to a second aspect of the present invention, there is provided the laser processing apparatus according to the first aspect, wherein the high-speed intensity is applied to the light-emitting element of the electric-light conversion element in accordance with external command data of the intensity of the laser beam. A command circuit for driving the light emitting element by outputting the modulated operating current is provided.

  The laser processing apparatus according to claim 3 is the invention according to claim 1 or claim 2, wherein the high-speed intensity modulation raises the optical output to the maximum melting point in a short time. Further, the temperature is lowered to the decomposition melting point or less which is the lowest value.

  Furthermore, a laser processing apparatus according to a fourth aspect is the invention according to any one of the first to third aspects, wherein the voltage applied to the one-chip semiconductor laser light source is gradually increased to a predetermined value. This is characterized in that a slow start circuit is provided for outputting the output.

  The laser processing apparatus according to claim 5 is the invention according to any one of claims 1 to 4, comprising a metal main body formed in a cylindrical shape, and the laser in the main body. A drive circuit is provided.

  According to a sixth aspect of the present invention, there is provided the laser processing apparatus according to the fifth aspect, wherein the optical conversion element is disposed within the main body at the optical axis center of the first direction laser light of the one-chip semiconductor laser light source. It is characterized in that it is arranged in the range of 30 ° to 90 ° at the central beam diffusion angle.

  The laser processing apparatus of the present invention includes an insulating electro-optical conversion element, outputs an operating current subjected to high-speed intensity modulation to the light emitting element of the electro-optical conversion element, and is output from a one-chip semiconductor laser light source. By performing high-speed intensity modulation of the laser light, stable resin bonding can be performed on a resin having a small temperature difference between the melting point and the decomposition melting point.

Hereinafter, a laser processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.
The laser processing apparatus 11 includes a watt-class one-chip semiconductor that emits a line-shaped laser beam L that dissolves a substance having a small temperature difference between a melting point and a decomposition melting point or a boiling point around an optical axis center 22. A laser drive circuit 31 that controls the intensity of the laser beam L and the laser beam L emitted from the watt-class one-chip semiconductor laser 13 is provided.

FIG. 1 shows a schematic diagram of a lens fixing device using a laser processing apparatus according to an embodiment of the present invention.
In FIG. 1, reference numeral 1 denotes a lens barrel of a laser processing object. This lens barrel 1 is a fiber-reinforced thermoplastic resin (an example of a material having a small temperature difference between a melting point and a decomposition melting point; for example, a melting point of 250 °). C, a resin having a decomposition melting point or a boiling point of 300 ° C.), a hole 4 into which the camera lens 5 is fitted inward, and an upper portion around the hole 4, and a camera for the inside. A caulking surface 2A that comes into contact with the lens 5 and a caulking portion 2 for caulking the camera lens 5 fitted into the hole 4 are provided. A receiving jig 3 for fixing the lens barrel 1 so that the caulking portion 2 faces upward is provided. The diameter of the hole 4 is slightly larger than the diameter of the camera lens 5, and when the camera lens 5 is disposed at the center, the both side surfaces 5 </ b> A of the camera lens 5 and the hole 4 are formed. A gap 6 (about 20 μm) is formed between the inner wall surface 4A and the inner wall surface 4A.

  Further, the caulking part 2 does not move the camera lens 5 even if the distance K from the upper end position of the side surface 5A of the camera lens 5 to the upper end position of the caulking part 2 melts the caulking part 2 by the laser processing apparatus 1. When the camera lens 5 is caulked, a central portion X between the upper end position of the side portion of the camera lens 5 and the upper end position of the caulking portion 2 is formed. The position (about 0.5 mm from the upper end of the caulking portion) is irradiated with the laser light L.

  In FIG. 1, reference numeral 11 denotes a laser processing apparatus disposed above the receiving jig 3, and the laser processing apparatus 11 includes the lens barrel 1, as shown in FIGS. 1, 2 (a) and 2 (b). A metal main body 12 having an open side and a cylindrical shape, and an insulating film (an example of an insulator) 16 fixed to the main body 12 by two resin screws 21, and the caulked portion of the lens barrel 1 A continuous wave (CW) type watt-class one-chip semiconductor laser (LD) (an example of a one-chip semiconductor laser light source) 13 having an emission portion 23 that emits a laser beam L that dissolves 2 around an optical axis center 22; A laser beam L, which is disposed on the optical axis center 22 in the main body 12 and between the lens barrel 1 and the watt-class one-chip semiconductor laser 13, and condenses the laser light L emitted from the emitting portion 23 of the watt-class one-chip semiconductor laser 13. Non-spherical A lens 14 and a lens holder 15 that holds the aspheric lens 14 in the main body 12 on the opened lens barrel 1 side, and allows the position of the aspheric lens 14 on the optical axis center 22 to be changed by an adjustment tool. , A power transistor 17 {first power transistor 17A (Tr1), second power transistor 17B (driven by a power supply line 24, which is disposed in the main body 12 and fed from the outside, and drives the watt-class one-chip semiconductor laser 13). Tr2), the third power transistor 17C (Tr3), the fourth power transistor 17D (Tr4)}, and the engagement provided in the main body 12 and at the rear end of the main body 12 (the end opposite to the lens barrel 1). A water cooling pipe 26 arranged from the joint portion 25 to the vicinity of the watt-class one-chip semiconductor laser 13 and the main body 12, and supplied by a feeder line 24. One end of the circuit board 27 and the positive power line connected to the watt-class one-chip semiconductor laser 13 are connected to the circuit board 27 and connected to the watt-class one-chip semiconductor laser 13. A photodiode (PD) (an example of a light conversion element) 28 that receives the laser light L is configured.

  As shown in FIG. 3, a laser drive circuit 31 is formed in the main body 12 by a watt-class one-chip semiconductor laser 13, each power transistor 17, a circuit board 27, and a photodiode 28. Is formed of an LED (an example of a light emitting element) 32A and a phototransistor (an example of a light receiving element) 32B. One end of the phototransistor 32B is connected to the other end of the photodiode 28, and the other end of the phototransistor 32B is a resistor 39. The photocoupler (an example of an electro-optical conversion element) 32 connected to one end of the photocoupler 32 and high-speed intensity modulation to the LED 32A of the photocoupler 32 according to external laser beam intensity command data input from the input terminal SIG E / O conversion circuit (an example of a command circuit) that drives the LED 32A by outputting an operating current multiplied by 3 And the other end of the photodiode 28 and one end of the phototransistor 32B of the photocoupler 32, the first power transistor 17A is connected based on the voltage between the point A and the negative power supply line. An APC circuit (an example of an output control circuit) 34 that drives and controls the current of the watt class one-chip semiconductor laser 13, an input terminal is connected to a positive power supply line, and an output terminal is one end of the watt class one-chip semiconductor laser 13. Connected to the slow start circuit 35 that outputs while gradually increasing the voltage applied to the watt class one-chip semiconductor laser 13 to a predetermined value, the base of the fourth power transistor 17D, and the negative power supply line. Is it a thermal overcurrent shutdown 38 that protects the circuit when a current flows? It is formed.

  The first power transistor 17A (an example of a drive element) has a base connected to the APC circuit 34, a collector connected to the other end of the resistor 39 and the other end of the watt-class one-chip semiconductor laser 13, and an emitter negative. Connected to the power line.

  The APC circuit 34 is formed of a transistor having a base connected to the point A, a collector connected to the negative power supply line via the base and resistor of the first power transistor 17A, and an emitter connected to the positive power supply line. Is done.

  The slow start circuit 35 has an output voltage adjusting element (one Darlington-connected second and third power transistors 17B and 17C) having one end connected to the positive power supply line and the other end connected to the watt-class one-chip semiconductor laser 13. ), A resistor 36 having one end connected to the positive power supply line and the other end connected to the base of the third power transistor 17C, and an electrolytic capacitor 37 having a positive terminal connected to the resistor 36 and the base of the third power transistor 17C. And is formed from.

  As shown in FIGS. 2 and 4, the photodiode 28 is 30 ° in the main body 12 at a beam diffusion angle centered on the optical axis center 22 of the first direction laser beam L of the watt class one-chip semiconductor laser 13. The photodiode 28 is disposed within a range of ˜90 °, that is, at a position 30 ° to 90 ° above the optical axis center 22 of the laser beam L in the main body 12, and the photodiode 28 is visible light. A cut filter is provided.

  In this manner, by arranging the photodiode 28 in the laser oscillation region A, that is, the region not in the LED mode, the photodiode 28 is avoided from being affected by the laser light L (return light).

The operation in the above embodiment will be described below.
First, as shown in FIG. 1, the lens barrel 1 to be laser processed is fixed upward on the receiving jig 3, and the lens 5 is fitted into the hole 4 of the lens barrel 1 to perform alignment. As a result of this alignment, the gap 6 becomes several tens of μm to several μm. Then, the laser beam L irradiated from the laser processing apparatus 11 is tilted by α (15 ° to 30 °) upward from the horizontal position, and the condensing part M of the laser beam L is in the center of the caulking surface 2A of the lens barrel 1. The laser processing apparatus 11 is adjusted so that the laser beam L in the slow direction is horizontal so as to match the position of the part X.

  When the camera lens 5 is caulked by the watt class one-chip semiconductor laser 13, the laser beam L is moved upward from the horizontal position in a nitrogen gas atmosphere in which nitrogen gas is sprayed onto the central portion X of the caulking surface 2A. The laser beam L in the slow direction is horizontal with respect to the position of the central portion X of the caulking surface 2A, which is the light condensing part M, in a state where it is tilted by α (15 ° to 30 °) so that the laser light L in the first direction is condensed. Irradiate. The beam width B (about 20 μm) of the laser beam L in the first direction is the width in the height direction of the central portion X that is a condensing portion.

The operation of the laser drive circuit 31 at this time will be described.
When operating the laser drive circuit 31 to emit the laser light L, a watt class of the laser drive circuit 31 is provided via the feeder line 24 using a commercially available inexpensive insulated switching power supply (not shown). A voltage is supplied to the one-chip semiconductor laser 13. Here, since the laser drive circuit 31 includes the slow start circuit 35, the voltage input from the isolated switching power supply is gradually increased to a predetermined value and applied to the watt class one-chip semiconductor laser 13 or the like. . Thereby, the stable operation | movement of the watt class one-chip semiconductor laser 13 by an insulation type switching power supply is attained.

As described above, the watt-class one-chip semiconductor laser 13 outputs the laser light L to the caulking surface 2A and outputs an optical signal to the photodiode 28. The photodiode 28 that receives this optical signal receives the optical signal. Is converted into an electric signal, and a current I ₂ is supplied to the photocoupler 32.

Potential at point A which is the connection point of these photodiodes 28 and photocoupler 32, the operation from the current I _2, and E / O conversion circuit 33 varies with the change in the light output of watt class one-chip semiconductor laser 13 Varies with current.

i. When an operating current subjected to high-speed intensity modulation is output from the E / O conversion circuit 33 to the LED 32A in the photocoupler 32, the operating current is converted into an optical signal by the LED 32A, and the photocoupler 32 is converted according to the optical signal. the current I ₂ by the phototransistor 32B of flows as the current I ₃ is adjusted to the resistor 39, the potential at this time point a is varied at high speed in accordance with the modulation of the operating current. When the effective value of the operating current subjected to the high-speed intensity modulation is increased (decreased) in accordance with the command data input from the input terminal SIG, the potential at the point A increases (decreases).

In this case, APC circuit 34, in response to variations in the potential at point A is varied the currents I ₁ supplies a first transistor 17A is driven to watts one-chip semiconductor laser 13, the optical output of the laser light (intensity ) At a high speed according to the modulation of the operating current, and when the operating current subjected to the high-speed intensity modulation increases (decreases) and the potential at point A increases (decreases), the watt-class one-chip semiconductor laser 13 The supplied current I ₁ is increased (decreased), and an output corresponding to the command data is output from the watt class one-chip semiconductor laser 13. As described above, the APC circuit 34 always responds to the potential determined by the operating current output from the E / O conversion circuit 33 (hereinafter referred to as the reference potential), and the optical output of the watt class one-chip semiconductor laser 13. Is controlling.

  ii. When the optical output of the watt-class one-chip semiconductor laser 13 changes depending on the ambient temperature, the electrical signal of the photodiode 28 changes, and the potential at point A changes accordingly. When the ambient temperature rises (falls) and the light output of the watt-class one-chip semiconductor laser 13 decreases (increases), the potential at point A increases (decreases).

When the light output of the laser beam decreases (increases) and the potential at point A increases (decreases) in this way, the APC circuit 34 performs current control on the base current of the first transistor 17A, and the first transistor 17A. increasing the current I ₁ that flows to the (reduced), increase the light output of watt class one-chip semiconductor laser 13 causes (reduced). Therefore, even if the ambient temperature changes, the light reception output voltage of the photodiode 28, that is, the light output of the laser light is maintained constant.

As described above, the change in the optical output of the watt-class one-chip semiconductor laser 13 (the change in the optical output accompanying the change in ambient temperature fed back by the photodiode 28) and the change in the operating current from the E / O conversion circuit 33. based on the change in the potential of the point a by (change in command data), the current I ₁ first transistor 17A is supplied are driven to watts one-chip semiconductor laser 13 by the APC circuit 34 is controlled, watts one The light output of the chip semiconductor laser 13 is controlled.

An input / output characteristic diagram of the laser beam L emitted from the watt-class one-chip semiconductor laser 13 of the laser processing apparatus 11 is shown in FIG.
By performing the control described above, as shown in FIG. 5, the output of the laser beam output from the watt-class one-chip semiconductor laser 13 is increased in proportion to the increase in the input voltage of the watt-class one-chip semiconductor laser 13. In other words, since a graph with linearity can be obtained in the input voltage-light output characteristic diagram, a stable laser beam L can be emitted from the watt-class one-chip semiconductor laser 13.

FIG. 6 shows an intensity fluctuation diagram of the laser light L emitted from the watt class one-chip semiconductor laser 13 of the laser processing apparatus 11.
As shown in FIG. 6, the operating current is subjected to high-speed intensity modulation by the E / O conversion circuit 33, increasing the optical output to the maximum value in a short time, reaching the melting point at the maximum value, and decomposing at the minimum value. Laser light subjected to high-speed intensity modulation is emitted from the watt-class one-chip semiconductor laser 13 to the laser processing object 1 so as to be below the melting point. Accordingly, the melting point is reached before the heat is transferred to the surroundings of the condensing part M, that is, the heat transfer to the surroundings of the condensing part M can be reduced. Therefore, it can be melted stably and strongly. Therefore, the influence of heat can be reduced and the penetration in the condensing part M can be deepened.

FIG. 7 and FIG. 8 show temperature-light output characteristic diagrams of the laser light L emitted from the watt-class one-chip semiconductor laser 13 of the laser processing apparatus 11.
As shown in FIG. 7, the base current of the first transistor 17A is automatically changed by the APC circuit 34 according to the ambient temperature change so that constant light output can be performed over a wide temperature range, that is, the potential at the point A. Is fed back to control the watt-class one-chip semiconductor laser 13 so that the temperature is raised from around 5 ° C. to around 35 ° C. within a predetermined time and then lowered again to around 5 ° C., that is, in a 40-degree fluctuation environment. However, the error in the output of the laser beam L can be within ± 2%, and as shown in FIG. 8, the output of the laser beam L even if time elapses without temperature adjustment. 1 can be kept within 1%, and the watt-class one-chip semiconductor laser 13 can be stably operated by the insulating switching power supply.

  As described above, according to the embodiment, the operating current subjected to the high-speed intensity modulation is output from the E / O conversion circuit 33 to the photocoupler 32, so that the high-speed intensity modulation is applied from the watt-class one-chip semiconductor laser 13. Since the laser beam is output, and thus the heat transfer to the periphery of the condensing part M can be reduced as described above, the laser processing object 1 can be dissolved stably and strongly without causing burns. In addition, since the fluctuation of the light output is compensated for the fluctuation of the light output due to the fluctuation of the ambient temperature in which the fluctuation of the light output is fed back by the photodiode 28, the resin is stable against the resin having a small temperature difference between the melting point and the decomposition melting point. Bonding can be performed.

  In addition, according to the embodiment, the laser drive circuit 31 can gradually increase the voltage input from the isolated switching power supply to the predetermined value by the slow start circuit 35. Stable operation of the one-chip semiconductor laser 13 is possible.

  Further, according to the embodiment, the position of the beam diffusion angle around the optical axis center 22 in the light emitting portion of the laser beam L in the first direction is located within a range of 30 ° to 90 °, that is, in the main body 12. The photodiode 28 is arranged at a location 30 to 90 ° above the optical axis center 22 of the laser light L, and the arrangement location is set as a laser oscillation region A, that is, a region not in the LED mode. It is possible to avoid being affected by the return light of the laser light L.

  Further, according to the embodiment, the photodiode 28 is shielded from light without being influenced by the laser light L (return light), so that the automatic current control operation (also referred to as ACC operation) by the laser driving circuit 31 is accurately executed. It becomes possible to do.

  In this embodiment, the substance is a thermoplastic resin having a small temperature difference between the melting point and the decomposition point, but is not limited to such a plastic resin, for example, a metal having a small temperature difference between the melting point and the boiling point, for example, Zinc die-casting etc. may be used.

  In this embodiment, the LED 32A is used as the light emitting element of the photocoupler 32 and the phototransistor 32B is used as the light receiving element. However, the present invention is not limited to this. A coupler may be used.

  In the present embodiment, the E / O conversion circuit 33 is provided in the main body 12, but is not limited thereto, and may be provided outside the main body 12.

It is the schematic of the lens fixing device using the laser processing apparatus in embodiment of this invention. It is the same laser processing apparatus, (a) is a plan view, (b) is a side view. It is a block diagram of the laser drive circuit of the laser processing apparatus. It is an intensity distribution figure of the first direction of the laser beam in the light emission part of the laser processing apparatus. It is an input-output characteristic figure of the laser beam radiate | emitted from the watt class one-chip semiconductor laser of the same laser processing apparatus. It is an intensity fluctuation figure of the laser beam radiate | emitted from the watt class one-chip semiconductor laser of the laser processing apparatus. It is a temperature-light output characteristic view of the laser beam radiate | emitted from the watt class one-chip semiconductor laser of the laser processing apparatus. It is a temperature-light output characteristic view of the laser beam radiate | emitted from the watt class one-chip semiconductor laser of the laser processing apparatus. It is a block diagram of the laser drive circuit of the conventional laser processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Laser processing apparatus 12 Main body 13 Watt class one-chip semiconductor laser (one-chip semiconductor laser light source)
17 Power transistor (driving element)
22 Optical axis center 28 Photodiode (light conversion element)
31 Laser Drive Circuit 32 Photocoupler (Electrical-Optical Conversion Element)
32A LED (light emitting device)
32B Phototransistor (light receiving element)
33 E / O conversion circuit (command circuit)
34 APC circuit (output control circuit)
35 Slow start circuit 39 Resistance L Laser beam

Claims (6)

A one-chip semiconductor laser light source that emits a line-shaped laser beam that melts this material toward a material having a small temperature difference between the melting point and the decomposition melting point or boiling point, centered on the optical axis center, and irradiated from the one-chip semiconductor laser light source A laser processing device provided with a laser drive circuit for controlling the intensity of the laser beam,
The laser driving circuit includes:
A light conversion element that receives the laser light laser-oscillated from the one-chip semiconductor laser light source and converts it into an electrical signal;
An electro-optical conversion element formed of a light emitting element and a light receiving element, wherein the light receiving element is connected in series with the light converting element, and connected in parallel to the one-chip semiconductor laser light source together with the light converting element;
A driving element of the one-chip semiconductor laser light source for controlling a current supplied to the one-chip semiconductor laser light source;
Due to a change in voltage at the connection point that is connected to a connection point between the light conversion element and the light-receiving element of the electro-light conversion element, and is caused by a change in an electrical signal of the light conversion element due to a change in the laser light An output control circuit for controlling the intensity of the laser beam by driving the drive element;
As the command data of the intensity of the laser beam, an operating current subjected to high-speed intensity modulation is input to the light emitting element of the electro-optical conversion element, and the voltage at the connection point is changed via the light receiving element. The drive element is driven by the output control circuit according to a change in the voltage of the laser beam, and the laser light output from the one-chip semiconductor laser light source is subjected to high-speed intensity modulation based on the command data of the intensity of the laser light. Laser processing equipment. A command circuit for driving the light-emitting element by outputting the operating current obtained by applying high-speed intensity modulation to the light-emitting element of the electro-optical conversion element in accordance with external command data of the laser beam intensity; The laser processing apparatus according to claim 1, wherein: The fast intensity modulation is
3. The laser processing apparatus according to claim 1, wherein the optical output is raised to a melting point which is a maximum value in a short time and is lowered to a temperature equal to or lower than a decomposition melting point which is a minimum value. . The laser according to any one of claims 1 to 3, further comprising a slow start circuit that outputs the voltage applied to the one-chip semiconductor laser light source while gradually increasing the voltage to a predetermined value. Processing equipment. The laser processing apparatus according to any one of claims 1 to 4, further comprising a metal main body formed in a cylindrical shape, wherein the laser drive circuit is provided in the main body. The light conversion element is arranged in a range of 30 ° to 90 ° in a beam diffusion angle around the optical axis center of the first direction laser light of the one-chip semiconductor laser light source in the main body. The laser processing apparatus according to claim 5.

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