JP2005347670A - Substrate dividing method, its apparatus, and element having joining surface - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for dividing a substrate having a small width of an ineffective portion, its apparatus, and an element having a joining surface excellent in mechanical strength. <P>SOLUTION: As shown in (a), joined substrates, where a first substrate and a second substrate are joined, is prepared, as in (b), a notch 3 is formed, and as in (c), a dicing scribe is formed. Then, as in (d), a surface opposite to the joined surface is etched for the first substrate 1, and applying a pressure as an arrow, the second substrate 2 is divided to divide the joined substrates. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate dividing method and apparatus, and an element having a bonding surface.

  In recent years, an element having a joint surface obtained by joining first and second plate-like parts made of different materials has been developed. For example, a semiconductor mechanical quantity sensor, such as a pressure sensor chip, supports a silicon chip as a first plate portion on which a circuit such as a diaphragm detection circuit is formed on a glass support pedestal as a second plate portion. Composed. In this case, the silicon substrate (silicon wafer) and the glass substrate are bonded to each other, and then the bonded substrate is cut using a dicing blade to be divided into individual chips 1.

  By the way, when performing cutting (dicing) with a blade as described above, it is necessary to use a blade having a blade width (thickness) corresponding to the cutting thickness. On the other hand, a bonded substrate obtained by bonding a silicon substrate and a glass substrate has a larger glass substrate thickness (generally about 1 to 3 mm) than a silicon substrate thickness (generally 300 to 800 μm). In this case, a blade having a large blade width (150 to 300 [mu] m) must be used. For this reason, there is a problem that the width of the scribe line of the silicon substrate, that is, the width of the invalid portion becomes large. When the chip is small, there are cases where the invalid area exceeds 10% of the entire silicon substrate.

  Therefore, in recent years, a technique for reducing the width of the ineffective portion in cutting the bonded substrate has been considered. For example, as shown in FIG. 13, after the silicon substrate 1 and the glass substrate 2 are bonded, the silicon substrate 1 side is cut with a blade 70 having a small blade width, and then the glass substrate 2 side is cut with a blade 71 having a large blade width. (See, for example, Patent Document 1).

  Further, as shown in FIG. 14, a notch 72 is formed in advance at a position corresponding to the scribe line of the glass substrate 2, and then joined to the silicon substrate 1, and then the remaining of the silicon substrate 1 and the glass substrate 2. There is also a method of cutting this part at once (see, for example, Patent Document 2).

  Further, as shown in FIG. 15, a cut 73 is formed in advance on the upper surface side of the glass substrate 2 and joined to the silicon substrate 1, and then the remaining portions of the silicon substrate 1 and the glass substrate 2 are joined. There is a method of cutting (see, for example, Patent Document 3).

  According to these, the blade 70 used for cutting the silicon substrate 1 can be made with a relatively small blade width, and the effective area can be expanded.

In addition, as shown in FIG. 16, the silicon substrate 1 on which the thin diaphragm 74 and the detection circuit are formed, and the bonding substrate in which the upper surface of the glass substrate 2 as the support base is bonded by the anodic bonding method, When cutting (dicing) along the scribe line 75 using a blade (not shown), a non-penetrating cut groove 76 having a wedge shape (V shape) in cross section is formed at a position corresponding to the scribe line 75 of the glass substrate 1. Is formed so as to leave a thickness of about several tens of μm from the surface opposite to the bonding surface (lower surface side in FIG. 16) to the bonding surface side (upper surface side in FIG. 16) of the glass substrate 2 by sandblasting. In addition, there is a method in which the silicon substrate 1 and a part of the glass substrate 2 (the portion constituting the bottom of the cut groove 76) are simultaneously cut with a blade (see, for example, Patent Document 4).
JP-A-6-61346 JP-A-4-10554 JP-A-8-32478 JP 2001-203174 A

  However, in the conventional substrate dividing method, when the scribe lines of the first substrate and the second substrate are shifted, for example, the end portion of the silicon substrate as the first substrate is exposed, and the exposed end is exposed. In the case where it is desired to manufacture an element configured to interface with a terminal provided in a part and an external circuit, there is a problem that it cannot be applied well.

  If the first substrate and the scribe line of the second substrate are separated from each other by the method shown in FIG. 13, when the first substrate is diced, it is different from the scribe line of the second substrate. Some cutting may occur in the portion, and the divided chip may be easily broken. Further, in the method shown in FIGS. 14, 15, and 16, a notch is formed in advance in a glass substrate as the second substrate, and the tip of the blade fits in the notch when dicing the first substrate. Therefore, in the case where the scribe lines of the first substrate and the second substrate are shifted from each other, it cannot be applied in principle.

  Further, in an element having a bonding surface formed by bonding the first plate-like portion and the second plate-like portion on the bonding surface, manufactured by the conventional substrate dividing method, the first plate-like portion and the second plate. Since both ends opposite to the joint surface of the shaped portion have a sharp shape, there is a problem that the mechanical strength is weak.

  In view of the above-mentioned conventional problems, the present invention is a method and an apparatus for dividing a substrate with a small width of an invalid portion, and particularly invalid when the scribe lines of the first substrate and the second substrate are shifted. It is an object of the present invention to provide a method and apparatus for dividing a substrate having a small width and a device having a bonding surface and excellent mechanical strength.

  The substrate dividing method according to the first invention of the present application includes a step of half-cut dicing one side of the substrate, and a step of etching one side of the substrate by irradiating plasma on one side of the substrate. To do.

  With such a configuration, it is possible to realize a substrate dividing method in which the width of the invalid portion is small.

  The substrate dividing method according to the second invention of the present application includes a step of forming a resin layer on one side of the substrate, a step of half-cut dicing through one side of the substrate while penetrating the resin layer, and a plasma on one side of the substrate. And etching one side of the substrate by irradiating the substrate.

  With such a configuration, it is possible to realize a substrate dividing method in which the width of the invalid portion is small.

  In the substrate dividing method according to the third invention of the present application, a step of half-cut dicing one side of the substrate, and plasma is generated in the groove formed by the half-cut dicing to advance the etching in the depth direction of the groove. And a step.

  With such a configuration, it is possible to realize a substrate dividing method in which the width of the invalid portion is small.

  A substrate dividing method according to a fourth invention of the present application is a substrate dividing method for dividing a bonded substrate formed by bonding a first substrate on which a circuit is formed and a second substrate, A step of half-cut dicing the surface opposite to the bonding surface with respect to the substrate, and irradiating the surface opposite to the bonding surface with respect to the first substrate, so that the surface opposite to the bonding surface is irradiated. Etching the surface, forming a cut groove on a surface opposite to the bonding surface with respect to the second substrate, and dividing the second substrate by applying pressure. .

  With such a configuration, a method of dividing a substrate with a small width of the invalid portion, particularly a substrate with a small width of the invalid portion even when the scribe lines of the first substrate and the second substrate are misaligned. A division method can be realized.

  A substrate dividing method according to a fifth aspect of the present invention is a substrate dividing method for dividing a bonded substrate formed by bonding a first substrate on which a circuit is formed and a second substrate. A step of forming a resin layer on a surface opposite to the bonding surface with respect to the substrate; a step of half-cut dicing while penetrating the resin layer with respect to a surface opposite to the bonding surface; On the other hand, a step of etching the surface opposite to the bonding surface by irradiating the surface opposite to the bonding surface with plasma, and a notch groove on the surface opposite to the bonding surface with respect to the second substrate. And a step of applying pressure to divide the second substrate.

  With such a configuration, a method of dividing a substrate with a small width of the invalid portion, particularly a substrate with a small width of the invalid portion even when the scribe lines of the first substrate and the second substrate are misaligned. A division method can be realized.

  A substrate dividing method according to a sixth invention of the present application is a substrate dividing method for dividing a bonded substrate formed by bonding a first substrate on which a circuit is formed and a second substrate, A step of half-cut dicing the surface opposite to the bonding surface with respect to the substrate, and generating plasma in the groove formed by half-cut dicing for the first substrate, in the depth direction of the groove. A step of etching, a step of forming a cut groove on a surface opposite to the bonding surface with respect to the second substrate, and a step of dividing the second substrate by applying pressure. .

  With such a configuration, a method of dividing a substrate with a small width of the invalid portion, particularly a substrate with a small width of the invalid portion even when the scribe lines of the first substrate and the second substrate are misaligned. A division method can be realized.

  A substrate dividing apparatus according to a seventh aspect of the present invention is a dicing unit provided with a substrate stage and a rotary blade, an etching unit provided with a substrate electrode and a plasma generator, and a substrate for transferring the substrate from the dicing unit to the etching unit. It is characterized by comprising a transfer device.

  With such a configuration, a substrate dividing apparatus having a small width of the invalid portion, particularly a substrate having a small width of the invalid portion even when the scribe lines of the first substrate and the second substrate are misaligned. A dividing device can be realized.

  The substrate dividing apparatus according to the eighth invention of the present application is a coating unit provided with a rotating table and a coating nozzle for placing and rotating a substrate, a drying furnace, a dicing unit provided with a substrate table and a rotary blade. And an etching unit provided with a substrate electrode and a plasma generator, and a transport device for transporting the substrate sequentially to a coating unit, a drying furnace, a dicing unit, and an etching unit.

  With such a configuration, a substrate dividing apparatus having a small width of the invalid portion, particularly a substrate having a small width of the invalid portion even when the scribe lines of the first substrate and the second substrate are misaligned. A dividing device can be realized.

  The element having the joint surface of the ninth invention of the present application is an element having a joint surface formed by joining the first plate-like portion and the second plate-like portion at the joint surface, and the joint surface of the first plate-like portion and Is characterized in that the opposite end has a round shape.

  With such a configuration, an element having a bonding surface with excellent mechanical strength can be realized.

  As described above, according to the substrate dividing method and apparatus of the present invention, the substrate dividing method and apparatus having a small ineffective portion width, particularly, the scribe lines of the first substrate and the second substrate are shifted. In this case, it is possible to realize a substrate dividing method and apparatus in which the width of the invalid portion is small. In addition, according to the element having the bonding surface of the present invention, an element having the bonding surface with excellent mechanical strength can be realized.

  Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1)
Hereinafter, Embodiment 1 of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view showing a substrate dividing method according to Embodiment 1 of the present invention.
In FIG. 1A, a bonded substrate is prepared by bonding a first substrate 1 (silicon) on which a circuit is formed and a second substrate 2 (glass). Next, as shown in FIG. 1B, a cut groove 3 is formed in the second substrate 2 on the surface opposite to the bonding surface. Next, as shown in FIG. 1C, half-cut dicing is performed on the surface opposite to the bonding surface with respect to the first substrate 1 to form a dicing groove 4. Then, as shown in FIG. 1D, the surface opposite to the bonding surface is etched by irradiating the surface opposite to the bonding surface with respect to the first substrate 1. At this time, the plate thickness of the first substrate 1 is slightly reduced, the groove width of the dicing groove 4 is slightly widened, and the dicing groove 4 reaches the bonding surface.

  Subsequently, pressure was applied as shown by an arrow in FIG. 1E to divide the second substrate 2, thereby dividing the bonded substrate. That is, even when the scribe lines of the first substrate 1 and the second substrate 2 are misaligned, good division can be performed. For example, it has become possible to manufacture an element configured to expose an end portion of a silicon substrate 1 as a first substrate and to interface an external circuit with a terminal provided at the exposed end portion. . The circuit is formed on the first substrate 1, and the scribe line of the first substrate 1 is accurately defined at the position where the half-cut dicing is performed, and is slightly inclined when the second substrate 2 is divided. Even if it is cracked, there is almost no adverse effect on the circuit of the first substrate 1.

  FIG. 2 is a cross-sectional view of the chip divided by the above method. In FIG. 2, it can be seen that the end 5 on the side opposite to the bonding surface of the first substrate 1 has a round shape. This is formed when the surface opposite to the bonding surface is etched by irradiating the surface opposite to the bonding surface with respect to the first substrate 1. The formation of such a round shape is attributed to the fact that in plasma etching, the etching rate at the edge portion is generally higher than the etching rate at the flat portion. The “element having a joint surface” formed in this manner and having an end opposite to the joint surface of the first plate-like portion in a round shape has an advantage of being resistant to mechanical or thermal shock. . That is, the first substrate 1 is thinner than the second substrate 2 and is a brittle material (silicon), and is likely to be distorted when a mechanical or thermal shock occurs. It is an edge part on the opposite side to the joint surface of a 1st plate-shaped part. If the end has a round shape, mechanical or thermal shock is diffused, and extreme strain concentration that causes cracking can be avoided.

  Next, each step in the above method will be described in detail.

  FIG. 3 is a schematic configuration diagram of the substrate dividing apparatus used in Embodiment 1 of the present invention. In FIG. 3, a substrate cassette 8 that houses a substrate in which a first substrate and a second substrate are bonded is placed on a cassette table 7 provided in the loader unit 6. The loader arm 9 takes out the substrate from the substrate cassette 8 and moves the substrate to the alignment stage 10. The substrate after center alignment and orientation flat or notch alignment on the alignment stage 10 is moved by the transfer arm 13 to the transfer chamber 12 connected to the loader unit 6 through the gate 11.

  Next, the substrate is moved by the transfer arm 13 to the dicing chamber 14 connected to the transfer chamber 12 through the gate 11. The half-cut diced substrate is moved again to the transfer chamber 12 by the transfer arm 13 and further moved to the etching chamber 15 connected to the transfer chamber 12 via the gate 11. The etched substrate is moved again to the transfer chamber 12 by the transfer arm 13, further transferred onto the alignment stage 10, and finally returned to the substrate cassette 8.

  FIG. 4 is a perspective view showing a schematic configuration of a dicing apparatus 17 provided in a dicing chamber as a dicing unit. In FIG. 4, the dicing device 17 has a configuration in which a rotary blade 20 is mounted on a spindle 19 rotatably supported by a spindle housing 18, and cutting water supply nozzles 21 are disposed on both sides thereof. It is comprised so that it can move to a direction and a Z-axis direction. A dicing groove 22 is formed by cutting a predetermined depth into the first substrate 1 that moves in the X-axis direction while the rotary blade 20 rotates at a high speed. Further, by performing the same cutting while indexing and feeding the dicing device 17 in the + Y direction at every scribe line interval, half-cut dicing grooves 22 that do not penetrate to the back surface in all the scribe lines in the same direction are formed.

  FIG. 5 is a cross-sectional view showing a schematic configuration of an etching chamber as an etching unit. In FIG. 5, while introducing a predetermined gas from the gas supply device 24 into the vacuum vessel 23, exhaust is performed by a turbo molecular pump 25 as an exhaust device, and the inside of the vacuum vessel 23 is maintained at a predetermined pressure by a pressure regulating valve 26. However, when high frequency power of 13.56 MHz is supplied to the coil 30 provided along the dielectric plate 29 facing the substrate electrode 28 by the coil high frequency power supply 27, inductively coupled plasma is generated in the vacuum vessel 23. The plasma treatment can be performed on the bonding substrate 31 placed on the substrate electrode 28. These function as a plasma generator.

Further, a high frequency power supply 32 for substrate electrode for supplying high frequency power to the substrate electrode 28 is provided so that ion energy reaching the substrate 31 can be controlled. The turbo molecular pump 25 and the exhaust port 33 are disposed immediately below the substrate electrode 28, and the pressure regulating valve 26 is a lift valve positioned directly below the substrate electrode 28 and directly above the turbo molecular pump 25. . The substrate electrode 28 is fixed to the vacuum vessel 23 by four columns 34. In the present invention, it is necessary to etch silicon at a high speed in order to improve productivity. Therefore, it is preferable to use a gas (a gas containing fluorine) that can generate a large amount of fluorine radicals such as SF ₆ and CF ₄ .

Further, oxygen gas, argon gas, or the like may be added to improve the etching rate. By supplying high-frequency power to the substrate electrode 28, it is possible to add ionicity to the etching reaction and suppress the expansion of the groove width of the dicing groove, while making the etching in the depth direction relatively fast. Further, by etching under the condition that the etching selectivity with glass is high, only the first substrate (silicon) can be etched without almost etching the second substrate (glass). That is, the appearance or function of the element can be improved by leaving no unnecessary traces on the second substrate (glass). In order to perform etching under conditions with a high etching selectivity to glass, it is preferable to use a carbon fluoride-based gas or a mixed gas of SF ₆ and oxygen.

(Embodiment 2)
The second embodiment of the present invention will be described below with reference to FIGS. FIG. 6 is a cross-sectional view showing a substrate dividing method according to Embodiment 2 of the present invention.

  In FIG. 6A, a bonding substrate is prepared by bonding a first substrate 1 (silicon) on which a circuit is formed and a second substrate 2 (glass). Next, as shown in FIG. 6B, the cut groove 3 is formed on the surface opposite to the bonding surface with respect to the second substrate 2. Next, as shown in FIG. 6C, a resin layer 35 is formed on the surface of the first substrate 1 opposite to the bonding surface. Then, as shown in FIG. 6D, half-cut dicing is performed on the surface of the first substrate 1 opposite to the bonding surface while penetrating the resin layer 35 to form the dicing grooves 4. Then, as shown in FIG. 6E, the surface opposite to the bonding surface is etched by irradiating the first substrate 1 with plasma on the surface opposite to the bonding surface. At this time, the thickness of the resin layer 35 slightly decreases and the dicing groove 4 reaches the bonding surface. Next, the resin layer is removed as shown in FIG. For removing the resin layer, wet etching with a solvent or ashing (dry etching) with oxygen plasma can be used.

  Next, it was possible to divide the bonded substrate by applying pressure as shown by an arrow in FIG. 6G to divide the second substrate 2. That is, even when the scribe lines of the first substrate 1 and the second substrate 2 are misaligned, good division can be performed. The circuit is formed on the first substrate 1, the scribe line of the first substrate 1 is accurately defined at the position where the half-cut dicing is performed, and when the second substrate 2 is divided, it is cracked slightly obliquely. Even so, the circuit of the first substrate 1 is hardly adversely affected.

  Next, each step in the above method will be described in detail.

  FIG. 7 is a schematic configuration diagram of the substrate dividing apparatus used in Embodiment 2 of the present invention. In FIG. 7, a substrate cassette 8 that houses a substrate in which a first substrate and a second substrate are bonded is placed on a cassette table 7 provided in the loader unit 6. The loader arm 9 takes out the substrate from the substrate cassette 8 and moves the substrate to the alignment stage 10. The substrate after center alignment and orientation flat or notch alignment on the alignment stage 10 is moved by the transfer arm 13 to the transfer chamber 12 connected to the loader unit 6 through the gate 11. Next, the substrate is moved by the transfer arm 13 to the coating chamber 36 connected to the transfer chamber 12 via the gate 11.

  Next, the substrate is moved again to the transfer chamber 12 by the transfer arm 13, and further moved to the dicing chamber 14 connected to the transfer chamber 12 via the gate 11 by the transfer arm 13. The half-cut diced substrate is moved again to the transfer chamber 12 by the transfer arm 13 and further moved to the etching chamber 15 connected to the transfer chamber 12 via the gate 11. The etched substrate is moved again to the transfer chamber 12 by the transfer arm 13, further transferred onto the alignment stage 10, and finally returned to the substrate cassette 8.

  FIG. 8 is a perspective view showing a schematic configuration in a coating chamber as a coating unit. In FIG. 8, the bonded substrate is placed on the turntable 37 with the first substrate 1 facing upward. The turntable 37 is connected to a first rotation gear 39 via a shaft 38, and the first rotation gear 39 is connected to a second rotation gear 41 via a belt 40. The second rotating gear is connected to the motor 43 via the shaft 42, and the rotating table 37 rotates as the motor 43 rotates. The liquid resin whose flow rate is controlled by the coating flow rate control device 44 is applied from the coating nozzle 45 onto the first substrate 1 from substantially the center thereof, and the first substrate 1 is rotated as the turntable 37 rotates. Spread evenly on top. In this way, after the application of the resin is completed, hot air is blown onto the first substrate 1 from the hot air generating device 46 through a large number of holes provided in the lower portion of the hot air nozzle 47, and the first substrate 1. Allow the top resin to dry. That is, the coating chamber has a resin coating function and a drying furnace. Of course, a drying chamber provided with a drying furnace may be provided separately from the coating chamber.

  Since the configuration of the dicing chamber has been described in detail in the first embodiment of the present invention, description thereof is omitted here.

  For the etching chamber serving as an etching unit, the vacuum plasma method used in Embodiment 1 of the present invention can be used. Here, an example using an atmospheric pressure plasma etching method as another method will be described. FIG. 9 is a cross-sectional view showing a schematic configuration of an atmospheric pressure plasma etching chamber. In FIG. 9, a bonding substrate 31 as an object to be processed is placed on a substrate electrode 48 as a first electrode with the first substrate facing upward. A counter electrode 49 as a second electrode is provided facing the substrate electrode 48, and a shower electrode 50 and a shower plate 51 are provided on the counter electrode 49. The shower electrode 50 and the shower plate 51 are provided with shower holes (through holes) 52 at positions corresponding to each other. A gas is supplied from a gas supply device 53 to a gas reservoir 55 which is a space provided between the counter electrode 49 and the shower electrode 50 via a pipe 54 and is ejected onto the bonding substrate 31 through the shower hole 52. By supplying high frequency power of 13.56 MHz from the high frequency power source 56 to the substrate electrode 48 in this state, a high frequency voltage is generated in the bonding substrate 31, and plasma is generated between the shower plate 52 and the bonding substrate 31. These function as a plasma generator. Each of the above components is in the atmospheric pressure, and a completely sealed and sturdy container such as a vacuum container and a vacuum pump are unnecessary. In addition, as a method for fixing the substrate 2 to the substrate electrode 1, a method using a removable adhesive, a method using an adhesive sheet, a method using a pressing jig, or the like can be selected as appropriate.

In the present invention, it is necessary to etch silicon at a high speed in order to improve productivity. Therefore, it is preferable to use a gas (a gas containing fluorine) that can generate a large amount of fluorine radicals such as SF ₆ and CF ₄ . In order to obtain a stable glow discharge, it is preferable to dilute a fluorine-containing gas with a large amount of helium gas (the helium concentration is about 90% to 99.9%). Further, oxygen gas, argon gas, or the like may be added to improve the etching rate.

  In Embodiment 2 of the present invention, the step of forming a resin layer on the surface opposite to the bonding surface with respect to the first substrate, and the resin layer penetrating through the surface opposite to the bonding surface. However, since the step of half-cut dicing is provided, it is possible to suppress the etching of the portion other than the groove in the etching step by the resin layer. Therefore, the etchant generated in the plasma is mainly consumed in the etching reaction in the groove, which brings about a special effect of improving the etching rate. Further, the spread of the groove is suppressed, and a special effect that the width of the scribe line of the first substrate 1, that is, the width of the invalid portion becomes narrower is brought about.

(Embodiment 3)
Hereinafter, a third embodiment of the present invention will be described with reference to FIG.

  In the present invention, another configuration is also conceivable as a method of performing etching using atmospheric pressure plasma in the etching step. One example will be described below. FIG. 10 is a cross-sectional view showing a schematic configuration of an atmospheric pressure plasma etching chamber. A bonded substrate in which the first substrate 1 and the second substrate 2 are bonded is prepared, and a cut groove 3 is formed on a surface opposite to the bonded surface of the second substrate 2. The surface opposite to the bonding surface with respect to the first substrate 1 is half-cut diced to form a dicing groove 4. A mask composed of a dielectric plate 57 and a metal plate 58 is placed on the first substrate 1. A gas pipe 59 is provided along the scribe line, and a number of gas outlets 60 are provided toward the first substrate 1. These function as a plasma generator. By applying a high voltage between the first substrate 1 and the metal plate 58, a micro hollow cathode discharge is generated in the dicing groove 4 and etching can proceed in the depth direction of the groove.

  The above method can also be applied to the case where the resin layer is formed on the surface opposite to the bonding surface with respect to the first substrate.

(Embodiment 4)
The fourth embodiment of the present invention will be described below with reference to FIG.

  In the present invention, another configuration is also conceivable as a method of performing etching using atmospheric pressure plasma in the etching step. One example will be described below. FIG. 11 is a cross-sectional view showing a schematic configuration of an atmospheric pressure plasma etching chamber. A bonded substrate in which the first substrate 1 and the second substrate 2 are bonded is prepared, and a cut groove 3 is formed on a surface opposite to the bonded surface of the second substrate 2. The surface opposite to the bonding surface with respect to the first substrate 1 is half-cut diced to form a dicing groove 4. The atmospheric pressure plasma source includes an electrode 61, ceramic inner plates 62 and 63, and outer plates 64 and 65. The outer plates 64 and 65 are provided with an outer gas flow channel 66 and an outer gas ejection port 68, and are arranged on the inner side. The plates 62 and 63 are provided with an inner gas passage 67 and an inner gas outlet 69. The lowermost portion of the electrode 61 has a knife edge shape, and a fine linear region can be etched. These function as a plasma generator. According to such a configuration, there is an advantage that only the vicinity of the dicing groove 4 can be etched at high speed without using a mask in which a resin or a dielectric plate and a metal plate are combined.

  The above method can also be applied to the case where the resin layer is formed on the surface opposite to the bonding surface with respect to the first substrate. In this case, the spread of the groove is suppressed, and a special effect that the width of the scribe line of the first substrate 1, that is, the width of the invalid portion becomes narrower is brought about.

(Embodiment 5)
Embodiment 5 of the present invention will be described below with reference to FIG.

  FIG. 12 is a cross-sectional view showing a substrate dividing method according to Embodiment 5 of the present invention. In FIG. 12A, a bonded substrate formed by bonding a first substrate 1 (silicon) on which a circuit is formed and a second substrate 2 (glass) is prepared. Next, as shown in FIG. 12B, a cut groove 3 is formed in the second substrate 2 on the surface opposite to the bonding surface. Next, as shown in FIG. 12C, a resin layer 35 is formed on the surface of the first substrate 1 opposite to the bonding surface. Then, as shown in FIG. 12D, half-cut dicing is performed on the surface of the first substrate 1 opposite to the bonding surface while penetrating the resin layer 35 to form the dicing grooves 4. Then, as shown in FIG. 12E, the surface opposite to the bonding surface is etched by irradiating the first substrate 1 with plasma on the surface opposite to the bonding surface. Here, since the film thickness of the resin layer 35 is very thin, the resin layer is etched away during the etching. When the etching further proceeds, as shown in FIG. 12F, the width of the dicing groove 4 is slightly widened and the thickness of the first substrate 1 is slightly reduced so that the dicing groove 4 reaches the bonding surface.

  Subsequently, pressure was applied as indicated by an arrow in FIG. 12G to divide the second substrate 2, thereby dividing the bonded substrate. That is, even when the scribe lines of the first substrate 1 and the second substrate 2 are misaligned, good division can be performed. The circuit is formed on the first substrate 1, the scribe line of the first substrate 1 is accurately defined at the position where the half-cut dicing is performed, and when the second substrate 2 is divided, it is cracked slightly obliquely. Even so, the circuit of the first substrate 1 is hardly adversely affected.

  A disadvantage of this method is that the groove is widened, so that the width of the scribe line of the first substrate 1, that is, the width of the invalid portion is widened. However, a step of removing the resin after etching is added again. There is an advantage that it is not necessary.

  In the embodiment of the present invention described above, the method in which the resin layer formed on the first substrate 1 is not finally left on the chip is illustrated. However, the element remains with the resin layer remaining on the first substrate 1. It is also possible. In this case, it can be expected that the resin layer functions as a protective film for the chip.

  In the etching step, the case where the dicing groove penetrates through the first substrate has been exemplified. However, even if the etching is stopped just before the penetration (leaving several μm), the bonded substrate can be divided without any problem. I know. With such a configuration, there are cases where the appearance or function of the element can be improved by leaving no unnecessary traces on the second substrate (glass). On the other hand, when etching is performed until it penetrates, the impact applied to the first substrate when the second substrate is divided can be further reduced.

  Moreover, although the case where the processing chamber for performing each step is provided around the transfer chamber is illustrated, each processing chamber may be arranged on a straight line so that the bonded substrate moves on the rail. . In this case, the rail serves as a transport device for transporting the substrate.

  Also, a case where a mask made of a dielectric plate 57 and a metal plate 58 is placed on the first substrate 1 and micro hollow cathode discharge is generated in the dicing groove 4 and etching proceeds in the depth direction of the groove. Although illustrated, such a mask can be combined with the vacuum plasma etching method as used in the first embodiment of the present invention. In this case, it is possible to suppress the portions other than the grooves from being etched by the mask in the etching step. Therefore, the etchant generated in the plasma is mainly consumed in the etching reaction in the groove, which brings about a special effect of improving the etching rate.

  In addition, a mask made of a dielectric plate 57 and a metal plate 58 is placed on the first substrate 1, and a gas pipe 59 is provided along the scribe line, and a gas outlet 60 is directed toward the first substrate 1. When a high voltage is applied between the first substrate 1 and the metal plate 58, a micro hollow cathode discharge is generated in the dicing groove 4 and etching proceeds in the depth direction of the groove. Although illustrated, the bonding substrate and the mask are arranged in a sealed container, and the discharge gas is sealed in the sealed container, or the gas is supplied and exhausted at the same time to keep the pressure in the sealed container substantially constant. It is also possible to apply a high voltage between the substrate 1 and the metal plate 58 to generate a micro hollow cathode discharge in the dicing groove 4 so that etching proceeds in the depth direction of the groove. In this case, there is a disadvantage that an airtight container is required, but there is an advantage that it is possible to save the trouble of accurately arranging the gas pipe having the gas ejection port on the scribe line.

  According to the substrate dividing method and apparatus of the present invention, the substrate dividing method and apparatus having a small ineffective portion width, particularly when the scribe lines of the first substrate and the second substrate are misaligned. Thus, a substrate dividing method and apparatus with a small width can be realized. In addition, according to the element having the bonding surface of the present invention, an element having the bonding surface with excellent mechanical strength can be realized. Therefore, it can be used for the production of semiconductors, display-related elements such as liquid crystals, LCoS devices, FEDs, PDPs, electronic parts, MEMS, and the like.

Sectional drawing which shows the division | segmentation method of the board | substrate in Embodiment 1 of this invention Sectional drawing of the divided | segmented chip | tip in Embodiment 1 of this invention 1 is a schematic configuration diagram of a substrate dividing apparatus used in Embodiment 1 of the present invention. The perspective view which shows schematic structure of the dicing unit used in Embodiment 1 of this invention. Sectional drawing which shows schematic structure of the etching chamber used in Embodiment 1 of this invention Sectional drawing which shows the division | segmentation method of the board | substrate in Embodiment 2 of this invention Schematic configuration diagram of the substrate dividing apparatus used in Embodiment 2 of the present invention. The perspective view which shows schematic structure in the coating chamber used in Embodiment 2 of this invention. Sectional drawing which shows schematic structure of the etching chamber used in Embodiment 2 of this invention Sectional drawing which shows schematic structure of the etching chamber used in Embodiment 3 of this invention Sectional drawing which shows schematic structure of the etching chamber used in Embodiment 4 of this invention Sectional drawing which shows the division | segmentation method of the board | substrate in Embodiment 5 of this invention. Sectional drawing which shows the division | segmentation method of the board | substrate of a prior art example Sectional drawing which shows the division | segmentation method of the board | substrate of a prior art example Sectional drawing which shows the division | segmentation method of the board | substrate of a prior art example Sectional drawing which shows the division | segmentation method of the board | substrate of a prior art example

Explanation of symbols

1 Silicon substrate 2 Glass substrate 3 Cut groove 4 Dicing groove

Claims (9)

A method for dividing a substrate, comprising: half-cut dicing on one side of the substrate; and etching one side of the substrate by irradiating plasma on one side of the substrate. Forming a resin layer on one side of the substrate; performing half-cut dicing on one side of the substrate while penetrating through the resin layer; and etching one side of the substrate by irradiating plasma on one side of the substrate And a substrate dividing method. Dividing the substrate, comprising: half-cut dicing on one side of the substrate; and plasma generation in a groove formed by the half-cut dicing to advance etching in the depth direction of the groove Method. A substrate dividing method for dividing a bonded substrate formed by bonding a first substrate and a second substrate on which a circuit is formed, the surface being opposite to the bonded surface with respect to the first substrate Half-cut dicing, etching the surface opposite to the bonding surface by irradiating the surface opposite to the bonding surface to the first substrate, and etching the second substrate to the second substrate On the other hand, a method for dividing a substrate, comprising: forming a cut groove on a surface opposite to the bonding surface; and dividing the second substrate by applying pressure. A substrate dividing method for dividing a bonded substrate formed by bonding a first substrate and a second substrate on which a circuit is formed, the surface being opposite to the bonded surface with respect to the first substrate Forming a resin layer on the surface, a step of half-cut dicing through the resin layer with respect to the surface opposite to the bonding surface, and a plasma on the surface opposite to the bonding surface with respect to the first substrate. , A step of etching the surface opposite to the bonding surface, a step of forming a cut groove on the surface opposite to the bonding surface with respect to the second substrate, and a second pressure by applying pressure. A substrate dividing method, comprising: dividing the substrate. A substrate dividing method for dividing a bonded substrate formed by bonding a first substrate on which a circuit is formed and a second substrate, the surface being opposite to the bonded surface with respect to the first substrate Half-cut dicing, etching a plasma in a groove formed by half-cut dicing with respect to the first substrate, and advancing etching in the depth direction of the groove; and On the other hand, a method for dividing a substrate, comprising: forming a cut groove on a surface opposite to the bonding surface; and dividing the second substrate by applying pressure. A substrate comprising: a dicing unit provided with a substrate base and a rotary blade; an etching unit provided with a substrate electrode and a plasma generator; and a transfer device for transferring the substrate from the dicing unit to the etching unit. Splitting device. A coating unit provided with a rotating table and a coating nozzle for placing and rotating a substrate, a drying furnace, a dicing unit provided with a substrate table and a rotary blade, a substrate electrode, and a plasma generator were provided. An apparatus for dividing a substrate, comprising: an etching unit; and a conveyance device for sequentially conveying the substrate to a coating unit, a drying furnace, a dicing unit, and an etching unit. It is an element having a joining surface formed by joining the first plate-like portion and the second plate-like portion on the joining surface, and the end opposite to the joining surface of the first plate-like portion is round. An element having a characteristic joining surface.

Images