JP2005337924A - Method for manufacturing pressure gauge, method for manufacturing gas treating apparatus, pressure gauge, and gas treating apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pressure gauge and its manufacturing method allowing to reduce an error in pressure measured values even when foreign substances such as a thin film are attached to a diaphragm. <P>SOLUTION: The method for manufacturing a pressure gauge is a manufacturing method for a pressure gauge comprising the diaphragm and means for detecting the deformation of the diaphragm. The method comprises conditions setting steps S1, S2 which set preconditions reflecting the influence of film formation conditions to the diaphragm on the diaphragm, relationship derivation steps S3, S4 which derive a relationship between an error of an output value detected by the diaphragm in the film formation conditions with respect to an output value detected by the diaphragm in the initial conditions or an amount related thereto and the geometry of the diaphragm by applying the preconditions to a modeled structure of the diaphragm, and a geometry selection step S5 which selects the geometry of the diaphragm on the basis of the relationship. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a pressure gauge manufacturing method, a gas processing apparatus manufacturing method, a pressure gauge, and a gas processing apparatus, and more particularly to a pressure gauge manufacturing technique and configuration suitable for measuring the pressure in a film forming apparatus. .

  In general, a film forming apparatus used in a semiconductor manufacturing process or the like is configured to dispose a substrate in a film forming chamber and form a thin film on the substrate. Usually, the film formation chamber is connected to an exhaust device such as a vacuum pump, and film formation is performed while the inside is maintained at a predetermined reduced pressure state by this exhaust device. Therefore, a pressure gauge for measuring the pressure in the film formation chamber (Vacuum gauge) is connected. As such a pressure gauge, for example, a diaphragm having a deflection characteristic corresponding to the pressure to be measured, and a diaphragm configured to be able to measure the pressure by detecting the deflection amount of the diaphragm. A type pressure gauge is known (see, for example, Patent Documents 1 and 2 below).

As such a diaphragm-type pressure gauge, there are various types such as a piezoelectric method, a thin film piezoresistive method, and a semiconductor piezo method, depending on the method for detecting the amount of deflection of the diaphragm. Among such various diaphragm-type pressure gauges, as a pressure gauge most frequently used in the above-described film forming apparatus, for example, a capacitance between an electrode formed on the diaphragm and a counter electrode facing the electrode. A capacitance manometer is known that detects the amount of deflection of the diaphragm by detecting. This capacitance manometer has an advantage that the absolute value of pressure can be measured with high accuracy without being substantially affected by the type of film forming gas.
Japanese Patent Laid-Open No. 5-203522 JP 2001-50841 A

  However, when the above-described diaphragm type pressure gauge is used in a film forming apparatus, a part of the reaction gas in the film forming chamber reaches the diaphragm, and a thin film is formed on the surface of the diaphragm. There is a problem in that an error occurs in the pressure measurement value due to a change in the deflection characteristics of the diaphragm.

  Specifically, when a thin film is formed on the diaphragm in a state of being bent at a predetermined pressure, a predetermined amount of bending is caused even when no pressure is applied to the diaphragm due to compressive stress (residual stress) received from the thin film. As a result, an origin offset occurs in the pressure gauge output. In addition, when a thin film is formed on the diaphragm, the elastic modulus of the diaphragm also changes substantially, so that the deflection characteristics of the diaphragm with respect to pressure change change, thereby changing the pressure sensitivity of the diaphragm.

  Therefore, the present invention solves the above-mentioned problems, and its object is to provide a pressure gauge capable of reducing an error in a pressure measurement value even if foreign matter such as a thin film adheres to the diaphragm, and a manufacturing method thereof. There is to do.

  In view of such circumstances, the pressure gauge manufacturing method of the present invention is a pressure gauge manufacturing method including a diaphragm and a means for detecting the deflection of the diaphragm, and is based on the state of film formation on the diaphragm. A condition setting step for setting a precondition that reflects the influence, and applying the precondition to the modeled diaphragm structure, the diaphragm in the film formation state with respect to the output value detected by the diaphragm in the initial state A relationship derivation step for deriving a relationship between an error in the output value detected by or an amount related thereto and a shape dimension of the diaphragm; a shape dimension selecting step for selecting a shape dimension of the diaphragm based on the relationship; It is characterized by comprising.

  In general, when a foreign substance adheres to the diaphragm, the deflection characteristics of the diaphragm change. Therefore, an error occurs in the output value with respect to an output value in an initial state where no foreign substance adheres to the diaphragm. Conventionally, measures such as reducing the above-mentioned error from the viewpoint of preventing gas intrusion into the pressure gauge, but the present inventors, on the premise that foreign matter adheres to the diaphragm, In order to minimize the influence of the film formation state of the diaphragm, a new approach of deriving the relationship between the influence and the shape of the diaphragm and determining the shape of the diaphragm based on this relationship was adopted.

  For example, when the diaphragm material and planar shape (outer diameter, etc.) are determined as preconditions, normally, the thicker the diaphragm, the smaller the effect of foreign matter adhering to the diaphragm. Since sufficient sensitivity is required in the measurement range, the thickness of the diaphragm is limited. Therefore, it is necessary to devise a technique for minimizing the influence (error) when foreign matter adheres to the diaphragm while limiting the thickness of the diaphragm to a certain extent. Therefore, in the present invention, the relationship between the error due to the film formation state or the amount related thereto and the shape dimension of the diaphragm is derived, and by selecting the shape dimension of the diaphragm based on this relationship, the film adheres to the diaphragm. Even so, a pressure gauge with few errors can be manufactured. Here, the selected shape dimension is the planar shape or thickness of the diaphragm. Here, in order to easily execute the above method, it is preferable to set one of the planar shape and the thickness of the diaphragm as a precondition and select the other.

  In the present invention, it is preferable that the precondition includes a value reflecting a mechanical property of the diaphragm and a value reflecting a film forming state on the diaphragm. Since the mechanical properties of the diaphragm and the film formation state on the diaphragm can be grasped from these values set as the preconditions, it is possible to derive the influence on the deflection of the diaphragm caused by the film formation state. Here, examples of the value that reflects the mechanical properties of the diaphragm include values that reflect the elastic constants (such as Young's modulus) of the material constituting the diaphragm, the shape dimensions such as diameter and thickness, and the like. The values reflecting the film formation state on the diaphragm include, for example, the amount of film formation on the diaphragm (thickness of the thin film), the film formation range (planar shape of the thin film), and the mechanical properties of the film formation material (thin film material). Examples include values indicating characteristics, stress values applied to the diaphragm according to the film formation state, and values reflecting the amount of deflection of the diaphragm in the film formation state.

  In the present invention, the precondition includes a pressure measurement range of the pressure gauge, and the error or an amount related thereto is an accumulated error amount obtained by integrating the error over the pressure measurement range. Is preferred.

  Further, another pressure gauge manufacturing method of the present invention is a pressure gauge manufacturing method including a diaphragm and a means for detecting the deflection of the diaphragm, and is configured for an output value detected by the diaphragm in an initial state. An integrated error amount is derived by integrating the error of the output value detected by the diaphragm in the membrane state over a predetermined pressure measurement range, and the thickness of the diaphragm is less than a predetermined allowable value. It is characterized in that the thickness is set to be.

  The present inventors use the integrated error amount as an index indicating the influence when a foreign object adheres to the diaphragm. This accumulated error amount is obtained by integrating the error of the output value in the film formation state in which the predetermined thin film is attached to the diaphragm over the predetermined pressure measurement range with respect to the output value in the initial state in which no foreign matter adheres to the diaphragm. And has a meaning as an index representing the magnitude of error of the entire predetermined pressure measurement range of the pressure gauge. And by setting the thickness of the diaphragm to a thickness at which the integrated error amount is not more than a predetermined allowable value by the method of the present invention, the pressure measurement range of the output value even when foreign matter is formed on the diaphragm. Therefore, a pressure gauge with high measurement accuracy can be manufactured.

  Further, a different pressure gauge manufacturing method of the present invention is a pressure gauge manufacturing method including a diaphragm and a means for detecting the deflection of the diaphragm, and forms a film with respect to an output value detected by the diaphragm in an initial state. The accumulated error amount derived by integrating the error of the output value detected by the diaphragm in the state over a predetermined pressure measurement range is expressed as a function with the thickness of the diaphragm as a variable, and the thickness of the diaphragm The thickness within the region where the function is a quadratic function, and the thickness within the range having the integrated error amount equal to or less than the minimum value of the integrated error amount in the region where the function is a linear function. It is characterized by setting.

  When the accumulated error amount is expressed as a function of the diaphragm thickness, the function becomes a quadratic function having a positive quadratic coefficient in a region where the diaphragm thickness is relatively small, as will be described later. In a relatively large area, the linear coefficient is a positive linear function. At this time, the thickness of the diaphragm is a thickness in a region where the function is a quadratic function, and has a stacking error amount equal to or less than a minimum value of an integrated error amount in a region where the function is a linear function. By setting the thickness within the range, the integrated error amount can be suppressed to a value close to the minimum value of the above function.

  In the present invention, it is preferable that the thickness of the diaphragm is equal to or greater than a thickness at which the integrated error amount takes a minimum value. Generally, when foreign matter adheres to the diaphragm, an origin offset occurs in the output value of the pressure gauge. For example, the output value when the pressure is 0 shifts when foreign matter adheres to the diaphragm. In many cases, this is caused by receiving stress from the foreign matter to which the diaphragm is attached. However, the thicker the diaphragm, the smaller the influence of the stress and the smaller the origin offset, so that the accumulated error amount is within a predetermined allowable value or less, or within the region where the function is a quadratic function. Even within the range having the integrated error amount equal to or less than the minimum value, the smaller the origin offset, the more the error in the output value in the region where the pressure is relatively small in the predetermined pressure measurement range. It is more preferable in terms of reduction. Therefore, setting the diaphragm thickness within the above range to suppress the integrated error amount, and further restricting the diaphragm thickness to a thickness at which the integrated error amount takes a minimum value, thereby reducing the origin offset. I did it.

  In addition, a method for manufacturing a gas processing apparatus according to the present invention includes a gas supply unit, a gas processing chamber that performs processing using a gas supplied from the gas supply unit, and an exhaust path of the gas supply unit or the gas processing chamber. A gas processing apparatus manufacturing method comprising a pressure gauge for measuring an internal pressure of the gas processing chamber or the exhaust path, wherein the pressure gauge is manufactured using the pressure gauge manufacturing method according to any one of the above. The pressure gauge is connected to the gas processing chamber or the exhaust path. According to the present invention, the influence of film formation on the diaphragm of the pressure gauge connected to the gas processing chamber or the exhaust path can be reduced, and the pressure detection error can be suppressed.

  Next, the pressure gauge of the present invention is a pressure gauge having a diaphragm and means for detecting the maximum deflection of the diaphragm, and is based on the diaphragm in the film formation state with respect to the output value detected by the diaphragm in the initial state. When the accumulated error amount derived by integrating the error of the detected output value over a predetermined pressure measurement range is expressed as a function with the thickness of the diaphragm as a variable, the thickness of the diaphragm is the function. Is a thickness within a region that is a quadratic function, and the thickness is within a range having the integrated error amount equal to or less than the minimum value of the integrated error amount in a region where the function is a linear function. It is characterized by that. Here, it is preferable that the thickness of the diaphragm is set to be equal to or larger than a value that takes the minimum value of the function.

  In addition, a gas processing apparatus according to the present invention includes a gas supply unit, a gas processing chamber that performs processing using a gas supplied from the gas supply unit, an exhaust path of the gas supply unit or the gas processing chamber, and the gas The pressure gauge according to any one of the above, which measures an internal pressure of a processing chamber or the exhaust path.

  According to the present invention, even when foreign matter (for example, a thin film) adheres to the diaphragm, it is possible to achieve an excellent effect that it is possible to configure a pressure gauge that can obtain an output value with little error in a predetermined pressure measurement range.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Here, the embodiment described below is a pressure gauge for a film forming apparatus for use in a film forming chamber of a film forming apparatus (not shown), but the present invention is not limited to such a pressure gauge, and a diaphragm is used. Any pressure gauge provided can be applied to any pressure gauge, and the same effect as in the present embodiment can be obtained for any application that may cause foreign matter to adhere to the diaphragm. Is something that can be done.

[Pressure gauge structure]
FIG. 1 is a schematic cross-sectional view schematically showing the structure of the pressure gauge 100 of the present embodiment. The pressure gauge 100 of the present embodiment is a diaphragm type pressure gauge, and in particular, is a type of pressure gauge that measures pressure by detecting a deflection amount of the diaphragm by a change in capacitance called a capacitance manometer.

In the pressure gauge 100, a diaphragm 103 is supported on one surface of a substrate 101 via a spacer 102, and a lid member 105 is disposed on the diaphragm 103 via a spacer 104. The lid member 105 is provided with an opening 105 a that opens toward the diaphragm 103. Diaphragm 103 is made of ceramics (sintered materials) such as Al ₂ O ₃ , AlN, SiN, SiC, Y ₂ O ₃ , sapphire, various inorganic materials (inorganic thin films) such as single crystal, polycrystal, and amorphous, stainless steel, Ni-Cr alloy, metal such as Fe, semiconductor such as silicon, Ge and GaAs, and other materials such as synthetic resin can be used. As a material for the diaphragm 103, a material suitable for the use environment (use temperature, pressure measurement range, etc.) is usually selected as appropriate. Examples of the manufacturing method of the diaphragm 103 include a sintering method, PVD (physical vapor deposition), CVD (chemical vapor deposition), and plasma spraying. Here, in the case of a metal material, it processes in order of pressurization (press), welding, and punching.

  The back space S defined between the substrate 101 and the diaphragm 103 is set as a reference pressure. For example, when used in a film forming apparatus or the like, it is set in a high vacuum state (that is, the absolute pressure is almost 0). Further, the front space T configured on the opening 105a side of the diaphragm 103 opens to the target space for pressure measurement through the opening 105a, and is set to the pressure of the target space, that is, the external pressure. The diaphragm 103 is configured to bend according to the pressure difference between the back space S and the front space T.

  Here, the configuration of the pressure detection portion of the pressure gauge 100 is not limited to the illustrated example, and any configuration is possible as long as the diaphragm 103 is configured to bend by a pressure difference between both sides of the diaphragm 103. It does not matter.

  Further, in the pressure gauge 100, the electrode 106X formed on the substrate and the electrode 106Y formed on the diaphragm 103 are disposed to face each other with the back space S interposed therebetween. Then, by measuring the capacitance between the terminal 106Xa of the electrode 106X and the terminal 106Ya of the electrode 106Y by the measurement circuit 106Z, an output Vo corresponding to the amount of deflection (maximum deflection) of the diaphragm 103 can be obtained. It is configured to be able to.

  For example, in the present embodiment, the relationship between the output voltage Vo of the measurement circuit 106Z and the maximum deflection of the diaphragm 103 (the amount of deflection at the center point of the diaphragm) ω is Vo = Vref × Cref × ω × G / εA = d × It is represented by ω × G. Here, a constant d = Vref × Cref / εA. Vref is a reference voltage, Cref is a reference capacitance, G is an amplification factor (gain), ε is a dielectric constant between the electrodes 106X and 106Y (back space S), and A is an opposed area of the electrodes 106X and 106Y.

  In the pressure gauge 100, a measurement adapter 108 can be attached to the opening 105a via a connector 107. In the measurement adapter 108, a shield plate 109 made of metal or the like is disposed. When the connection port 108a is connected to the film formation chamber, the plasma in the film formation chamber can be blocked by the shield plate 109. It is configured.

[Pressure gauge operation]
FIG. 2 is an explanatory view schematically showing a detection structure of the pressure gauge 100. As shown in FIG. FIG. 2A shows a state when the pressure difference between both sides of the diaphragm 103 is 0 (for example, when the back space S is in a high vacuum state, the external pressure is 0). When a predetermined pressure is applied from the outside and the pressure difference between the two sides of the diaphragm 103 becomes Pd (for example, the external pressure becomes Pd if the back space S is in a high vacuum state), it is shown in FIG. Thus, the diaphragm 103 bends to the back space S side. The maximum deflection ω of the diaphragm 103 at this time is ωd.

  Next, it is assumed that the thin film 110 is formed as shown in FIG. 2C by the gas or the like flowing into the surface of the diaphragm 103 through the opening 105a in the state of FIG. After that, when the external pressure decreases and the pressure difference between both sides of the diaphragm 103 becomes 0 again, the maximum deflection ω of the diaphragm 103 also decreases, but the maximum deflection ω becomes 0 as shown in FIG. Rather, a slight maximum deflection ωx resulting from the formation of the thin film 110 remains, which causes an origin offset Vx in the pressure gauge output Vo. This origin offset Vx is formed on the surface of the diaphragm 103 in a state where the thin film 110 is bent at the maximum deflection ωd corresponding to the pressure Pd, so that the pressure difference on both sides of the diaphragm 103 decreases and the maximum deflection ω. Is reduced, the diaphragm 103 receives compressive stress (residual stress) from the thin film 110.

  In addition, when the thin film 110 is formed on the diaphragm 103 as described above, the bending characteristics of the diaphragm 103 with respect to the pressure change also change with respect to the initial state depending on the elastic characteristics of the thin film 110, its formation range, thickness, etc. Sensitivity to pressure also changes.

As for the above matters, the pressure gauge configured to obtain the output value by detecting the maximum deflection (the deflection amount at the center point of the diaphragm) ω as the deflection amount of the diaphragm 103 will be described in detail as follows. Become.
When the maximum deflection of the diaphragm in the initial state (the state where the thin film 110 is not formed) is ω0 (a function of the pressure P),
(1) ω0 = a × P
Is assumed to hold. Here, a is a coefficient determined by the mechanical characteristics of the diaphragm 103 in the initial state. An example of the relationship of the above formula (1) is shown by a solid line (initial characteristic) in FIG. However, the output Vo = d × ω0 × G and Vmax = d × ω0 × Pmax. Here, d is a coefficient determined by a method of detecting the amount of deflection of the diaphragm, and G is an amplification factor (gain). Further, the pressure measurement range of the pressure gauge 100 is set to P = 0 to Pmax.

On the other hand, as described above, when the maximum deflection of the diaphragm when the thin film 110 is formed on the diaphragm 103 (film formation state) is ω1 (function of the pressure P),
(2) ω1 = b × P + c
Is assumed to hold. Here, b is a coefficient determined by the mechanical characteristics of the diaphragm 103 in the film formation state, and c is a constant corresponding to the origin offset Vx, which is equal to the maximum deflection ωx of the diaphragm 103 generated by forming the thin film 110 described above. An example of the relationship of the above formula (2) is shown by a one-dot chain line (post-deposition characteristic A) and a dotted line (post-deposition characteristic B) in FIG. In the above equations (1) and (2), it is assumed that the relationship between the maximum deflection ω of the diaphragm and the pressure P (pressure difference between both sides of the diaphragm) is expressed by a linear equation.

Assuming the above, the error ΔV of the output Vo based on the maximum deflection difference | ω0−ω1 | between the diaphragm in the initial state and the diaphragm in the film formation state is expressed as follows.
(3) ΔV = d × | ω0−ω1 | × G

Here, when Vmax = d × ωmax × G and ωmax = a × Pmax, G = Vo / (d × ω0) = Vo / (d × a × P) = Vmax / (d × a × Pmax). From the above, the integrated error amount X obtained by integrating the error ΔV in the pressure measurement range P = 0 to Pmax is:
(4) X = d × G × ∫ | ω0−ω1 | × dP = d × Vmax / (d × a × Pmax) × ∫ | ω0−ω1 | × dP = Vmax / (a × Pmax) × ∫ | ( a−b) × P−c | × dP
It becomes. An example of the integrated error amount X is indicated by the area Sa or Sb of the hatched area in FIG.

  The integrated error amount X can be used as an index indicating the degree of the error ΔV between the output Vo in the initial state of the diaphragm and the film formation state in the pressure measurement range. By reducing the integrated error amount X, it is possible to obtain a pressure gauge that is less affected by film formation.

  FIG. 4 is a perspective view schematically showing the shape of the diaphragm 103, and FIG. 5 is a cross-sectional view of the minute sector 103p around the center Cx of the diaphragm 103. As shown in FIG. As shown in FIG. 4, it is assumed that the diaphragm 103 (two-dot chain line in the figure) is a disk (solid line in the figure) having a radius r1 of the fixed end Dx and a thickness t1, and a thin film 110 formed on the diaphragm 103 is formed. Assume a disk with a radius r2 and a thickness t2. At this time, assuming a minute sector piece 103p having a minute angle dθ around the center Cx of the diaphragm 103 as a central angle, the minute sector piece 103p can be regarded as a beam that receives stress corresponding to the pressure P.

Here, as shown in FIG. 5, when the thin film 110 is formed, the action point Cz of the small fan-shaped piece 103p (corresponding to the outer edge position of the thin film 110 in the diaphragm 103, r2 from the center Cx toward the outer side in the radial direction). It is assumed that a compressive stress (residual stress) Ff is applied radially inward with respect to a point at a distance. Then, a bending moment Mf centered on the action point Cz is generated in the minute sector 103p. The relationship between the maximum deflection (that is, the amount of deflection at the center Cx) dωx / dθ and the thickness t1 generated by the formation of the thin film 110 with respect to the minute sector piece 103p is the bending moment caused by the stress caused by the pressure P and the above-described relationship. Calculation is performed based on the balance condition with the bending moment Mf caused by the compressive stress Ff generated by the formation of the thin film, and the boundary condition of the center Cx that is the free sliding end and the Dx that is the fixed end in the minute sector 103p. Is expressed as the following approximate expression (5). Here, the contribution of the thin film 110 to the deflection characteristics is represented by the compressive stress Ff, and the contribution of the mechanical characteristics of the thin film 110 and the thickness t2 is the thickness t1 >> t2. Ignored. For example, in a pressure gauge having a maximum measurement pressure Pmax = 1 to 10 torr, the thickness t1 of the diaphragm 103 is about 50 to 200 μm, whereas the thickness t2 of the thin film 110 is about 0.1 to 5 μm at most. There is no problem with this kind of approximation.
(5) dωx / dθ = (6Fflog | r2 | −6Fflog | r1 |) / (E × t1 ² × dθ)
Here, E is an elastic coefficient of the diaphragm 103. Then, by integrating the small fan-shaped piece 103p with respect to the central angle dθ, the maximum deflection ωx of the diaphragm 103 resulting from the formation of the thin film 110 is derived as follows.
(6) ωx = ∫ (dωx / dθ) × dθ = (6Fflog | r2 | −6Fflog | r1 |) / (E × t1 ² )
From this equation (6), it can be seen that the origin offset Vx = d × ωx × G of the diaphragm 103 is inversely proportional to the square of the thickness t 1 of the diaphragm 103.

FIG. 6 shows the relationship between the origin offset amount Vx calculated using the finite element method and the thickness t1 of the diaphragm 103, Vx = 0.438 × t1 ^−1.906 . Here, r1 = 15 mm and r2 = 5 mm, the mass density of the diaphragm 103 is 3.82 × 10 ⁻⁵ [N / mm ³ ], the Young's modulus is 3.5 × 10 ⁵ [N / mm ² ], Poisson A ratio of 0.23 was used. Further, Pmax = 10 [torr] and Vmax = 10 [V]. This result is in good agreement with the above equation (6). For the calculation by the finite element method, a structural analysis computer program Pro / Mechanica 2000i (trademark, trade name: manufactured by PTC (Parametric Technology Corporation)) was used. In this computer program, structural analysis can be performed by the finite element method based on a model structure prepared by shape modeling, material definition, constraint condition setting, load condition setting, analysis set setting, element creation, and the like. That is, in this case, the stress deformation of the diaphragm 103 can be obtained by setting the model structure of the diaphragm 103, the material constants, the values of internal stress and external stress, and the constraint conditions.

Next, the integrated error amount X defined by the above equation (4) will be determined for the disc-shaped diaphragm 103 shown in FIG. In the disk-shaped diaphragm 103, the coefficient a in the above equation (1) indicating the maximum deflection ω0 when the pressure P is applied is generally expressed by [r1 ⁴ / (κ × t1 ³ )]. That is, the above formula (1) is
(7) ω0 = P × r1 ⁴ / (κ × t1 ³ )
It becomes. κ is a constant determined by the mechanical properties of the diaphragm. This equation (7) indicates that the maximum deflection ω 0 is expressed by a linear function of pressure P having a proportional coefficient of [r 1 ⁴ / (κ × t 1 ³ )], but the thin film 110 is formed on the diaphragm 103. Then, since the thickness t1 changes substantially, it can be seen that the proportionality coefficient changes depending on the presence or absence of the thin film 110.

Here, the coefficient of the formula (1) is a = r1 ⁴ / (κ × t1 ³ ) = g / t1 ³ , the coefficient of the formula (2) is b = h / t1 ^3, and the above formula (6) results using the above that the constants of the equation (2) and c = j / t1 ^2, the use the above equation (4) and (7),
(8) X = Vmax × t1 ³ / (g × Pmax) × ∫ | (g−h) × P / t1 ³ −j / t1 ² | × dP = Vmax / (g × Pmax) × ∫ | (g− h) × P−j × t1 | × dP
It becomes.
At this time, when 0 ≦ j × t1 / (g−h) ≦ Pmax,
(9) X = Vmax / (g × Pmax) × {(g−h) × Pmax ² / 2−j × t1 × Pmax + j ² × t1 ² / (g−h)}
And
When Pmax ≦ j × t1 / (g−h),
(10) X = Vmax / (g × Pmax) × {(g−h) × Pmax ² / 2−j × t1 × Pmax}
It becomes.

  The above equation (9) indicates that the accumulated error amount X is a quadratic function of the diaphragm thickness t1. Here, when the thin film 110 is formed on the diaphragm 103, since the rigidity of the diaphragm 103 increases and g> h, the integrated error amount X becomes a quadratic curve opened upward and takes a minimum value. I understand that. On the other hand, Expression (10) indicates that the accumulated error amount X is a linear function of the diaphragm thickness t1. That is, in the region of t1 ≦ (g−h) × Pmax / j, the accumulated error amount X is a quadratic function of the thickness t1, and in the region of t1 ≧ (g−h) × Pmax / j, the accumulated error amount X is It is a linear function of thickness t1. Therefore, the integrated error amount X has different dependency on the diaphragm thickness t1 on both sides of the boundary where the thickness t1 is (g−h) × Pmax / j.

FIG. 7 shows the result of trial calculation of the accumulated error amount X expressed as described above for an actual pressure gauge. The results shown in FIG. 7 show that alumina (Al ₂ O ₃ ) is used as the material of the diaphragm 103, its mass density is 3.82 × 10 ⁻⁵ [N / mm ³ ], and its Young's modulus is 3.5 × 10 ⁵ [ N / mm ² ] and a result calculated using a Poisson's ratio of 0.23. Also, r1 = 15 mm, r2 = 5 mm, Pmax = 10 [torr], and Vmax = 10 [V]. In this calculation, the computer program for structural analysis described above was used.

  In the above calculation, the above-mentioned coefficient g can be obtained from the density, elastic modulus, and shape size of the diaphragm 103, and when the thin film 110 is formed on the diaphragm 103 with a predetermined material to a predetermined thickness. If the maximum deflection ωx of the diaphragm 110 resulting from the film formation of the thin film 110 is measured, the compressive stress Ff exerted on the diaphragm 103 by the thin film 110 can be obtained from the maximum deflection ωx using Equation (6). Then, the coefficients h and j of the above equation (2) can be obtained using this compressive stress Ff. Then, by calculating the above equations (9) and (10) based on these, the integrated error amount X can be obtained as a function of the diaphragm thickness t1.

  Instead of the above method, the coefficients g, h, and j (or a, b, and c) are all determined by experiment, and the accumulated error amount X is calculated using the above equations (9) and (10). You may ask for it. Further, instead of measuring the maximum deflection ωx as described above, the above-described coefficients h and j may be obtained by setting the mechanical properties (such as elastic modulus) and thickness of the thin film 110 and performing the calculation. .

  Here, in the above calculation process, parameters (h and j or b and c described above) indicating the influence of the thin film 110 on the deflection characteristics of the diaphragm 103 are actually used. It is preferably set based on the material and thickness of the thin film formed on the diaphragm 103 by connection to the membrane device. For example, when the number of film formations using the pressure gauge 100 is N, the thickness of the thin film deposited on the diaphragm 103 of the pressure gauge 100 by N film formation processes is measured in advance by experiments or the like. It is preferable to determine the above parameters with reference to the thin film.

  In this calculation example, as shown in FIG. 7, in the region where the diaphragm thickness t1 is equal to or less than the value of the boundary region of about 0.1 mm, the accumulated error amount X is a quadratic function of the thickness t1, and the thickness In a region where the thickness t1 is equal to or greater than the value of the boundary region of about 0.1 mm, the integrated error amount X is a linear function of the thickness t1. Therefore, this result is in good agreement with the characteristics represented by the above equations (9) and (10) when (g−h) × Pmax / j is about 0.1 mm.

  When manufacturing a pressure gauge in the present embodiment, the thickness t1 of the diaphragm 103 is set to a thickness within a range A in which the integrated error amount X shown in FIG. 7 is equal to or less than a predetermined allowable value Xs. That is, the thickness t1 of the diaphragm 103 is set to a thickness within a range A having an accumulated error amount X equal to or less than the above-described allowable value Xs, more specifically, a thickness ta to which the accumulated error amount X is equal to or greater than Xmin and equal to or less than Xs. Set to the value in tb. Here, the allowable value Xs is, for example, preferably 5 times or less of the Xmin with respect to the minimum value Xmin of the integrated error amount X, and particularly preferably 3 times or less of Xmin. By doing so, a pressure gauge with little measurement error can be configured even when the thin film 110 is formed on the diaphragm 103.

  Further, as shown in FIG. 6, the origin offset Vx is smaller when the thickness t1 of the diaphragm 103 is larger. Therefore, in order to make the origin offset Vx as small as possible, the thickness t1 of the diaphragm 103 is set to the integrated error amount X. The minimum value Xmin is preferably set within a range B that is equal to or greater than the diaphragm thickness tmin from which the minimum value Xmin is obtained, and is equal to or less than the diaphragm thickness tb from which the integrated error amount X of the allowable value Xs is obtained. Here, of course, it is more desirable to set the thickness t1 of the diaphragm 103 to a thickness tmin corresponding to the minimum value Xmin of the integrated error amount X.

  On the other hand, the thickness t1 of the diaphragm 103 can be set by another method. As described above, the accumulated error amount X is a quadratic function in a region where the thickness t1 is smaller than the boundary thickness tcu with the thickness tcu = (g−h) × Pmax / j shown in FIG. In a region where the thickness t1 is larger than the boundary thickness tcu, a linear function is obtained. Therefore, the diaphragm thickness t1 is the thickness in the region where the integrated error amount X is a quadratic function, and the minimum value in the region where the integrated error amount X is a linear function, that is, the integrated value at the boundary thickness tcu. The thickness is set in a range C that is equal to or less than the error amount Xt, that is, a thickness not less than tcd and not more than tcu shown in FIG. In this way, a pressure gauge having a smaller accumulated error amount X than in the prior art can be configured.

  Also in this range C, as described above, as shown in FIG. 6, it is preferable that the diaphragm thickness t1 is large in order to reduce the origin offset Vx, so that the diaphragm thickness t1 is equal to the integrated error amount X. It is desirable to set the thickness tmin or more corresponding to the minimum value Xmin, that is, to set the thickness t1 within the range D from tmin to tcu shown in FIG. In this case as well, it is of course more desirable to set the thickness t1 of the diaphragm 103 to a thickness tmin corresponding to the minimum value Xmin of the integrated error amount X.

  In order to clarify the relationship between this embodiment and the prior art, an example of a conventional product of a capacitance manometer of the same type as that of this embodiment will be described. The measurement range is 0 to 10 torr (Pmax = 10 torr above). In a ceramic capacitance manometer (the diaphragm is made of alumina), the thickness of the diaphragm is 0.15 mm or more, and corresponds to, for example, the Y point shown in FIGS. 6 and 7. This Y point is not included in any of the above ranges A to D.

  Next, an example of the manufacturing method according to the present embodiment will be specifically described with reference to FIG. In this embodiment, first, main configuration conditions and usage conditions of the pressure gauge are set in step S1. In this step S1, for example, the pressure measurement range of the pressure gauge, the elastic characteristics of the material constituting the diaphragm (for example, Young's modulus, Poisson's ratio, etc.), a part of the diaphragm shape (for example, the radius r1 described above) The film formation range on the diaphragm (for example, the above-described radius r2), the film formation amount on the diaphragm (for example, the above-described thickness t2), and the like are set. That is, in this step S1, the parameter of the calculation performed based on the pressure gauge modeling set in the next step S2 is set.

  In the next step S2, the pressure gauge is modeled. In step S2, a calculation model using the parameters set in step S1 is configured. This calculation model includes the process of abstracting or simplifying the diaphragm as shown in FIGS. 4 and 5 in the above example. In this example, this step is a stage for setting the configuration of the calculation model represented by the equations (1) to (10). However, one of a plurality of preset calculation models may be selected. If a calculation model has already been set, substantially nothing may be performed in step S2. The above step S1 and this step S2 constitute the above condition setting step.

  In the next step S3, the relationship between the diaphragm shape and the amount of deflection is derived according to the above calculation model. This step S3 corresponds to the step of calculating Equation (6) in the above example and deriving the relationship shown in FIG. 6, for example, the relationship between the thickness of the diaphragm and the origin offset Vx. In step S4, the relationship between the diaphragm shape and the integrated error amount is derived according to the above calculation model. This step S4 corresponds to the step of calculating the equations (9) and (10) in the above example and deriving the relationship between the thickness of the diaphragm and the integrated error amount. These steps S3 and S4 constitute the above relationship deriving step. Here, step S4 may be executed without executing step S3.

  In these steps S3 and S4, the pressure-dependent characteristics of the diaphragm in the film formation state (for example, characteristics corresponding to the above equation (2)) are calculated using the above-described computer program for structural analysis, and based on these characteristics. A calculation result indicating the above relationship (for example, the relationship corresponding to the above formula (6) or (9) and (10)) can be obtained. At this time, in each of the shape modeling step and the constraint condition setting step of the structural analysis computer program, the model structure determined in step S2 is specified, and each step of material definition and load condition setting of the program Then, the values of parameters such as material constants and stress determined in step S1 are input.

  For example, in the above-described structural analysis program, first, as a shape modeling process, coordinate points, surface information, and the like are input to form a three-dimensional structural model of a diaphragm in a film formation state. Next, setting of stress (load) value or origin offset amount received from the thin film, setting of diaphragm material constants (Young's modulus, Poisson's ratio, density, etc.), restraint part of the above structural model (in the above example, the outer edge of the diaphragm) The constraint condition is set by selecting or inputting by selecting. By performing these, analysis of the stress deformation problem, that is, three-dimensional calculation of the deformation state of the structural model when a predetermined stress (load) corresponding to the pressure to be measured is applied to the structural model. become able to. Then, using this result, the pressure dependence of the structural model, that is, the output characteristic of the pressure gauge based on the diaphragm in the film formation state can be obtained.

  In this relationship derivation step, in the above example, the calculation is executed using the thickness of the diaphragm shape as a variable. In the above example, since the planar shape (outer diameter) of the diaphragm is set as one of the preconditions in the condition setting step (steps S1 and S2), the relationship derivation step among the diaphragm shape dimensions is set. This is because the thickness is the only variable. Therefore, for example, when the thickness of the diaphragm is set as one of the preconditions in the condition setting step, the above relationship can be derived using the outer diameter of the diaphragm as a variable in the relationship deriving step.

  In the next step S5, the shape of the diaphragm is selected according to the above relationship. For example, in the above example, the thickness of the diaphragm is selected. This step S5 constitutes the shape dimension selection step. In the case of the above example, this shape dimension selection step corresponds to a stage in which a suitable thickness range of the diaphragm is determined according to the relationship shown in FIGS. 6 and 7 and a thickness within this range is selected. When selection of the shape of the diaphragm is completed, a pressure gauge is manufactured in the next step S6. Then, attachment (connection to a gas processing chamber or an exhaust path) is performed for each gas processing apparatus described below.

  Here, unlike the above example, when considering the mechanical characteristics of the material constituting the thin film, the elastic characteristics (for example, Young's modulus, Poisson's ratio, etc.) of the thin film material are also set in step S1. . In addition, when the influence of the thin film on the diaphragm is incorporated into the calculation with higher accuracy, it is necessary to set the thermal expansion coefficient of the thin film and the diaphragm, the adhesion coefficient between the thin film and the diaphragm, and the like. In this case, it is necessary to make the calculations in steps S3 and S4 more accurate. As a method for executing the calculation with such a more detailed model, for example, there is a method using a finite element method analysis program called “MARC (trademark)” manufactured by Nippon Mark Co., Ltd. (or MSC. Software Corporation). .

Finally, an embodiment of a gas processing apparatus provided with the pressure gauge will be described. A gas processing apparatus 10 shown in FIG. 9 constitutes a plasma etching system. The gas processing apparatus 10 includes a chamber 11, a gas supply unit 10 A that introduces an etching gas (eg, Cl ₂ , C ₄ F ₈ , SF _6, Ar, etc.) into the gas inlet 11 a of the chamber 11, and the chamber 11. And an exhaust device 10 </ b> B that exhausts the inside of the chamber 11. An upper electrode 12 is installed inside the gas inlet 11 a of the chamber 11, and high frequency power is applied to the upper electrode 12 by a power source 13. The etching gas supplied to the gas inlet 11 a is activated by passing through the gas passage hole of the upper electrode 12 and is introduced into the chamber 11. The chamber 11 is provided with a material supply port 11b having a gate valve that can be opened and closed. A susceptor (mounting table) 14 is disposed inside the chamber 11, and high frequency power is applied to the susceptor 14 by a power supply 15. Further, an electrostatic chuck 16 for attracting and holding an object to be processed (semiconductor wafer or the like) W is provided on the susceptor 14, and the electrostatic chuck 16 is configured to operate by feeding power from a DC power source 17. . A gas supply source 18 that supplies a cooling gas for cooling the workpiece W disposed on the susceptor 14 and a suction device 19 for adsorbing and holding the workpiece W are provided. The susceptor 14 is preferably cooled by passing a coolant such as cooling water.

  In the gas processing apparatus 10 of this embodiment, a port (opening) 11d is provided on the wall surface of the chamber 11, and the pressure gauge 100 is connected to the inside of the chamber 11 through the port 11d. The internal pressure of the chamber 11 can be measured. Further, the internal pressure of the chamber 11 can be controlled by operating a flow control valve (not shown) provided between the exhaust port 11c and the exhaust device 10B based on the pressure detection value detected by the pressure gauge 100. Configured. In this gas processing apparatus 10, the workpiece W is etched by the active species of the etching gas. At this time, the material to be etched is formed on the surface of the diaphragm disposed in the pressure gauge 100 through the port 11d. There is a possibility of filming. Accordingly, a maintenance cycle of the gas processing apparatus 10 (that is, a cycle for cleaning or replacing the diaphragm of the pressure gauge 100) is set in advance, and the above condition setting is performed according to the thickness of the thin film formed in this cycle, the pressure measurement range, and the like. A step is executed, the above-described relationship deriving step is executed based on the precondition set in this step, and the shape dimension (for example, thickness) of the diaphragm is selected based on the relationship derived in this step. By doing in this way, the pressure detection error by the pressure gauge 100 can be suppressed to the minimum. It is also possible to control the internal pressure of the chamber 11 with high accuracy.

FIG. 10 shows a schematic structure of another gas processing apparatus 20. The gas processing apparatus 20 can be used as a plasma CVD apparatus or a thermal CVD apparatus. The gas processing apparatus 20 includes a chamber 21, a gas supply unit 20 A that supplies gas to the chamber 21, and an exhaust device 20 B that exhausts the inside of the chamber 21. A gas introduction part (shower head) 22 is formed on a part of the wall surface of the chamber 21. The gas introduction unit 22 is supplied with a gas supplied from the gas supply unit 20A (for example, a metal compound such as TiCl ₄ supplied through the gas supply pipe 20x, an organometallic compound, or other source gas and a gas supply pipe 20y. Reaction gas such as NH ₃ ) is introduced and released into the chamber 21 through a large number of pores provided in the gas introduction part 22. Here, high-frequency power is applied to the gas introduction unit 22 by a power source 22T via a matching unit (matching circuit) 22S. Moreover, the gas introduction part 22 is heated by heating means 22H such as a heater. The heater power supply 22J supplies power to the heating means 22H.

  A susceptor (mounting table) 23 is disposed inside the chamber 21, and the workpiece W is disposed on the susceptor 23. The susceptor 23 is heated by heating means 23H such as a heater. The heater power supply 23J supplies power to the heating means 23H. The susceptor 23 is provided with a lifter pin 23P for lifting the workpiece W conveyed through the gate onto the surface of the susceptor 23. The lifter pin 23P is a drive device such as a motor via the drive member 24. It is configured to move in and out from the mounting surface of the susceptor 23 by being driven by 25. Further, the chamber 21 is provided with a material supply port 21b having an opening / closing mechanism such as a gate valve. The gas processing apparatus 20 can be used as a plasma CVD apparatus when high frequency power is applied to the gas introduction unit 22 by the power source 22T, and can be used as a thermal CVD apparatus when high frequency power is not applied. It is comprised so that it can be used.

  A port 21 d is provided in the chamber 21 of the gas processing apparatus 20, and the pressure gauge 100 is connected to the port 21 d so that the internal pressure of the chamber 21 can be measured by the pressure gauge 100. Further, the internal pressure of the chamber 21 can be controlled by operating a pressure control valve (not shown) provided between the exhaust port 21c and the exhaust device 20B based on the pressure detection value detected by the pressure gauge 100. Configured. In this gas processing apparatus 20, when the film forming process is performed on the workpiece W, the film is also formed inside the pressure gauge 100 via the port 21 d. In order to reduce the influence, the present invention is applied in the same manner as the gas processing apparatus 10 described above. Thereby, the pressure detection error of the pressure gauge 100 can be suppressed. Moreover, favorable film formation control can be performed by controlling the internal pressure of the chamber 21 with high accuracy.

  FIG. 11 shows a schematic configuration of a different gas processing apparatus 30. The gas processing apparatus 30 can be used as an LP-CVD (low pressure CVD) apparatus. The gas processing apparatus 30 includes an outer cylinder 31 made of quartz, SiC, or the like, and an inner cylinder 32 disposed inside the outer cylinder 31, and the workpiece W is placed inside the inner cylinder 32. A carrier 33 having a boat to be placed and a heat insulating cylinder is arranged. A heating means 34 composed of a heater or the like is disposed outside the outer cylinder 31. The gas supplied from the gas supply unit 30 </ b> A is introduced into the inner cylinder 32 through the gas introduction pipe 35. The gas introduced into the inner cylinder 32 is led out to a space between the outer cylinder 31 and the inner cylinder 32 through a number of gas discharge holes provided in the inner cylinder 32, and further discharged to the exhaust pipe 36 from the gas inlet 31c. It is comprised so that. The exhaust pipe 36 is connected to the exhaust device 30B via an exhaust trap 37 and a valve (pressure control valve) 38.

  A port 36 d is formed in the exhaust pipe 36, and the pressure gauge 100 is connected to the exhaust pipe 36 through the port 36 d, whereby the internal pressure of the exhaust pipe 36 can be measured by the pressure gauge 100. In general, the internal pressure of the exhaust pipe 36 or the outer cylinder 31 can be controlled by operating the pressure control valve 38 or the like based on the pressure detection value detected by the pressure gauge 100. Since the thin film is formed on the diaphragm by the exhaust gas flowing in the exhaust pipe 36, the present invention is applied to the pressure gauge 100 in the same manner as the gas processing apparatus 10 in order to reduce the influence of the film formation. To do. Thereby, the pressure detection error of the pressure gauge 100 can be suppressed. Moreover, favorable film formation control can be performed by controlling the internal pressure of the outer cylinder 31 with high accuracy.

  FIG. 12 shows a schematic configuration of a further different gas processing apparatus 40. The gas processing apparatus 40 can constitute an ICP (inductively coupled type) plasma apparatus. In the gas processing apparatus 40, a chamber is constituted by a container 41 and a bell jar 42 made of quartz or the like disposed so as to cover the upper portion of the container 41. An induction coil 42E is formed on the outer periphery of the bell jar 42, and high frequency power is applied to the induction coil 42E through a matching unit (matching circuit) 42S by a power source 42T. The gas supplied from the gas supply part 40A is introduced through a gas introduction part 41x provided in a part of the chamber (a part between the container 41 and the bell jar 42). The container 41 is provided with a material supply port 41b having an opening / closing mechanism such as a gate valve.

  In the chamber, a susceptor (mounting table) 43 for mounting the workpiece W is disposed. The susceptor 43 is configured to be heated by a heating unit 43H such as a heater, and the heating unit 43H is supplied with electric power from a heater power source 43J. Further, a lower electrode is disposed in the susceptor 43, and high frequency power is supplied to the lower electrode through a matching unit (matching circuit) 43S by a power source 43T. Furthermore, a grounded counter electrode 42G is disposed on the outer surface of the wall surface (the upper wall portion of the bell jar 42) facing the lower electrode of the chamber. The counter electrode 42G prevents an adverse effect caused by an oblique electric field formed in the chamber and a poor ignition of plasma. An exhaust device 20B is connected to the exhaust port 41c of the chamber.

  Also in the gas processing apparatus 40, a port 41d is formed on the wall surface of the chamber (container 41), and the pressure gauge 100 is connected to the chamber via the port 41d, so that the internal pressure of the chamber can be measured by the pressure gauge 100. ing. Further, the internal pressure of the chamber can be controlled by operating a pressure control valve (not shown) provided between the exhaust port 41c and the exhaust device 40B based on the pressure detection value detected by the pressure gauge 100. Composed. Since the adherend or the like etched in the chamber adheres to the pressure gauge 100 on the diaphragm, the present invention is applied in the same manner as the gas processing apparatus 10 in order to reduce the influence of the deposit. Thereby, the pressure detection error of the pressure gauge 100 can be suppressed. Also, good etching control can be achieved by controlling the internal pressure of the chamber with high accuracy.

  In addition, the manufacturing method of the pressure gauge of this invention is not limited only to the above-mentioned illustration example, Of course, various changes can be added within the range which does not deviate from the summary of this invention. For example, in the above embodiment, a capacitance manometer is given as an example of a pressure gauge, but the present invention is not limited to a capacitance manometer, and any type of pressure gauge can be used as long as it is a diaphragm type pressure gauge that detects the amount of deflection of the diaphragm and measures the pressure. It can also be applied to things. In addition, the gas processing apparatus and the gas processing apparatus according to the present invention are not limited to those shown in the above-described embodiment, and foreign substances may be attached on the diaphragm of the connected pressure gauge. Any gas processing apparatus may be used as long as it has a property.

The schematic block diagram which shows the structure of the pressure gauge of embodiment. Schematic explanatory drawing (a)-(d) shown in the form which contrasts an initial state and the film-forming state about the operation state of the pressure gauge of embodiment. The graph which shows the output characteristic in the pressure gauge of embodiment. The model figure which shows the shape dimension of the diaphragm of embodiment. Explanatory drawing which shows the relationship between the cross-sectional structure of a micro sector piece assumed with the model of the diaphragm of embodiment, and a parameter. The graph which shows the relationship between origin offset amount (DELTA) V of embodiment computed using the finite element method, and the thickness t1 of a diaphragm. The graph which shows the relationship between the total amount of error X calculated | required by calculation of embodiment, and the thickness t1 of a diaphragm. The schematic flowchart which shows the procedure of embodiment of the manufacturing method of a pressure gauge. The schematic sectional drawing which shows schematic structure of embodiment of a gas processing apparatus. The schematic sectional drawing which shows schematic structure of another embodiment of a gas processing apparatus. The schematic sectional drawing which shows schematic structure of different embodiment of a gas processing apparatus. The schematic sectional drawing which shows schematic structure of further different embodiment of a gas processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Pressure gauge, 101 ... Board | substrate, 103 ... Diaphragm, 103p ... Small fan-shaped piece, 106X, 106Y ... Electrode, 106Z ... Measuring circuit, 110 ... Thin film, P ... Measuring pressure, omega ... Maximum deflection of diaphragm, t1 ... Diaphragm of diaphragm Thickness, t2 ... thickness of thin film, r1 ... effective radius of diaphragm, r2 ... radius of thin film, ωx ... maximum deflection of diaphragm resulting from thin film formation, Vo ... output value, Vx ... offset of origin, G ... amplification factor, Vmax: maximum output value, Pmax: maximum measured pressure, 10-40: gas processing device, 10A, 20A, 30A, 40A ... gas supply unit, 10B, 20B, 30B, 40B ... exhaust device, 11, 21, 31 ... chamber 11d, 21d, 36d, 41d ... port, 36 ... exhaust pipe

Claims (10)

A method for manufacturing a pressure gauge, comprising: a diaphragm; and means for detecting deflection of the diaphragm,
A condition setting step for setting a precondition that reflects the influence on the diaphragm by the film formation state on the diaphragm;
By applying the precondition to the modeled diaphragm configuration, an error in the output value detected by the diaphragm in the film formation state relative to the output value detected by the diaphragm in the initial state or a quantity related thereto And a relationship derivation step for deriving a relationship with the shape of the diaphragm.
A geometric dimension selection step for selecting a geometric dimension of the diaphragm based on the relationship;
The manufacturing method of the pressure gauge characterized by comprising.   2. The pressure gauge manufacturing method according to claim 1, wherein the precondition includes a value reflecting a mechanical property of the diaphragm and a value reflecting a film formation state on the diaphragm. The precondition includes the pressure measurement range of the pressure gauge,
3. The pressure gauge manufacturing method according to claim 1, wherein the error or an amount related thereto is an integrated error amount obtained by integrating the error over the pressure measurement range. A method for manufacturing a pressure gauge, comprising: a diaphragm; and means for detecting deflection of the diaphragm,
An integrated error amount is derived by integrating the error of the output value detected by the diaphragm in the film formation state with respect to the output value detected by the diaphragm in the initial state over a predetermined pressure measurement range, and the thickness of the diaphragm The pressure gauge manufacturing method is characterized in that the thickness is set to a thickness at which the integrated error amount is a predetermined allowable value or less. A method for manufacturing a pressure gauge, comprising: a diaphragm; and means for detecting deflection of the diaphragm,
The accumulated error amount derived by integrating the error of the output value detected by the diaphragm in the film formation state with respect to the output value detected by the diaphragm in the initial state over a predetermined pressure measurement range is the thickness of the diaphragm The thickness of the diaphragm is a thickness in a region where the function is a quadratic function, and the minimum value of the accumulated error amount in a region where the function is a linear function A pressure gauge manufacturing method, wherein the thickness is set within a range having the following integrated error amount.   The pressure gauge manufacturing method according to claim 4 or 5, wherein a thickness of the diaphragm is set to be equal to or greater than a thickness at which the integrated error amount takes a minimum value. A gas supply unit, a gas processing chamber that performs processing using a gas supplied from the gas supply unit, an exhaust path of the gas supply unit or the gas processing chamber, and an internal pressure of the gas processing chamber or the exhaust path are measured. A manufacturing method of a gas processing apparatus comprising a pressure gauge,
The pressure gauge is manufactured using the pressure gauge manufacturing method according to any one of claims 1 to 6,
A method for manufacturing a gas processing apparatus, comprising: connecting the pressure gauge to the gas processing chamber or the exhaust path. A pressure gauge having a diaphragm and means for detecting deflection of the diaphragm;
The accumulated error amount derived by integrating the error of the output value detected by the diaphragm in the film formation state with respect to the output value detected by the diaphragm in the initial state over a predetermined pressure measurement range is the thickness of the diaphragm Is expressed as a function, the thickness of the diaphragm is a thickness in a region where the function is a quadratic function, and the minimum of the accumulated error amount in a region where the function is a linear function The pressure gauge is set to a thickness within a range having the integrated error amount equal to or less than a value.   The pressure gauge according to claim 8, wherein a thickness of the diaphragm is set to be equal to or larger than a value that takes a minimum value of the function. A gas supply unit, a gas processing chamber that performs processing using a gas supplied from the gas supply unit, an exhaust path of the gas supply unit or the gas processing chamber, and an internal pressure of the gas processing chamber or the exhaust path are measured. A gas processing apparatus comprising the pressure gauge according to claim 7.

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