JP2000055757A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JP2000055757A JP2000055757A JP10225798A JP22579898A JP2000055757A JP 2000055757 A JP2000055757 A JP 2000055757A JP 10225798 A JP10225798 A JP 10225798A JP 22579898 A JP22579898 A JP 22579898A JP 2000055757 A JP2000055757 A JP 2000055757A
- Authority
- JP
- Japan
- Prior art keywords
- transmission rod
- diaphragm
- force transmission
- sensor substrate
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、シリコンやゲルマニウ
ム等の半導体からなるピエゾ抵抗素子を用いた半導体圧
力センサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor using a piezoresistive element made of a semiconductor such as silicon or germanium.
【0002】[0002]
【従来の技術】図16に従来の半導体圧力センサを示
す。基台1上に、例えば、n型シリコンからなるセンサ
基板2が設けられ、このセンサ基板2の裏面部の中央付
近に一定深さの溝2aが設けられて基台1との間に隙間
が形成され、この溝2aにより厚みを減少された部位が
ダイヤフラム部2bとされている。ダイヤフラム部2b
の表面部には、例えば、p型シリコンからなる複数のピ
エゾ抵抗素子3が設けられている。この半導体圧力セン
サは、センサ基板2のダイヤフラム部2bの表面に直接
圧力を印加し、ピエゾ抵抗素子3の抵抗値の変化を電気
的に検出することにより、圧力の大きさを検出するもの
である。2. Description of the Related Art FIG. 16 shows a conventional semiconductor pressure sensor. A sensor substrate 2 made of, for example, n-type silicon is provided on the base 1, and a groove 2 a having a certain depth is provided near the center of the back surface of the sensor substrate 2, so that a gap is formed between the sensor substrate 2 and the base 1. The portion formed and reduced in thickness by the groove 2a is a diaphragm portion 2b. Diaphragm part 2b
Are provided with a plurality of piezoresistive elements 3 made of, for example, p-type silicon. This semiconductor pressure sensor detects the magnitude of pressure by directly applying pressure to the surface of the diaphragm portion 2b of the sensor substrate 2 and electrically detecting a change in the resistance value of the piezoresistive element 3. .
【0003】ここで、圧力を印加した際のピエゾ抵抗素
子3の抵抗変化の割合ΔR/Rは、x,y,z方向に作
用している応力を各々σx ,σy ,σz 、各方向の応力
に関係するピエゾ抵抗係数をπx ,πy ,πz とする
と、次式(1)で与えられる。 ΔR/R=πx σx +πy σy +πz σz ……(1) 実際にはセンサ基板2のダイヤフラム部2bの厚さが、
例えば、数100μm以下程度と十分に薄いため、z方
向の応力σz は実質的に存在せず、図16の半導体圧力
センサの場合、抵抗変化の割合ΔR/Rは次式(2)で
表される。 ΔR/R=πx σx +πy σy ……(2)Here, the rate of change in resistance of the piezoresistive element 3 when a pressure is applied, ΔR / R, is defined as σ x , σ y , σ z , the stress acting in the x, y, z directions, respectively. Assuming that the piezoresistive coefficients relating to the stress in the direction are π x , π y , π z , it is given by the following equation (1). The thickness of ΔR / R = π x σ x + π y σ y + π z σ z ...... (1) actually the sensor substrate 2 diaphragm portion 2b,
For example, since it is sufficiently thin, about several hundred μm or less, there is substantially no stress σ z in the z direction. In the case of the semiconductor pressure sensor of FIG. 16, the rate of change in resistance ΔR / R is expressed by the following equation (2). Is done. ΔR / R = π x σ x + π y σ y ...... (2)
【0004】[0004]
【発明が解決しようとする課題】ところで、x方向のピ
エゾ抵抗係数πx とy及びz方向のピエゾ抵抗係数
πy,πz とは互いに逆極性となり、シリコン等の半導
体の結晶の方向に依存するが、例えば、πx が正の値を
取るとき、πy ,πz は負の値を取る。一方、図17に
センサ基板2のダイヤフラム部2bにおけるx,y方向
の応力σx ,σy の分布を示すように、ダイヤフラム部
2bの中央部付近ではσx ,σy が共に負の値を取り、
ダイヤフラム部2bの周辺部付近ではσx ,σy が共に
正の値を取る。By the way, the piezoresistive coefficient π x in the x direction and the piezoresistive coefficients π y and π z in the y and z directions have opposite polarities, and depend on the direction of the crystal of the semiconductor such as silicon. However, for example, when π x takes a positive value, π y and π z take negative values. On the other hand, as shown in FIG. 17, the distribution of the stresses σ x , σ y in the x, y directions in the diaphragm 2 b of the sensor substrate 2, both σ x , σ y have negative values near the center of the diaphragm 2 b. take,
In the vicinity of the periphery of the diaphragm 2b, both σ x and σ y take positive values.
【0005】このように、πx とπy が互いに逆極性と
なるのに対して、σx とσy が互いに同一極性となるの
で、上記式(2)におけるπx σx とπy σy とは互い
に逆極性となる。従って、図16の半導体圧力センサで
は、抵抗変化の割合ΔR/Rの絶対値〔ΔR/R〕は、
下式(3)で表され、x,y方向の成分同士が相殺し合
って抵抗変化率の絶対値〔ΔR/R〕が小さな値となる
結果、ピエゾ抵抗効果を有効に利用できず、半導体圧力
センサの感度が低くなりがちな問題がある。なお、本明
細書では、便宜上〔 〕で絶対値を表す。 〔ΔR/R〕=〔πx σx 〕−〔πy σy 〕 ……(3) また、従来の半導体圧力センサで測定可能な最大圧力
は、例えば、40乃至85MPa程度であるが、測定分
野によっては一層高い圧力の検出が必要となるため、よ
り高圧の測定が可能な半導体圧力センサの開発が求めら
れていた。As described above, since π x and π y have opposite polarities, σ x and σ y have the same polarity, π x σ x and π y σ in the above equation (2) y has opposite polarities to each other. Therefore, in the semiconductor pressure sensor of FIG. 16, the absolute value [ΔR / R] of the rate of resistance change ΔR / R is
As expressed by the following equation (3), the components in the x and y directions cancel each other out and the absolute value [ΔR / R] of the resistance change rate becomes a small value. As a result, the piezoresistance effect cannot be used effectively, There is a problem that the sensitivity of the pressure sensor tends to be low. In this specification, the absolute value is indicated by [] for convenience. [[Delta] R / R] = [[pi] x [sigma] x ]-[[pi] y [sigma] y ] (3) The maximum pressure measurable with a conventional semiconductor pressure sensor is, for example, about 40 to 85 MPa. Since detection of a higher pressure is required in some fields, development of a semiconductor pressure sensor capable of measuring a higher pressure has been demanded.
【0006】[0006]
【課題を解決するための手段】本発明は、上記の課題を
解決して、従来より高圧の測定が可能で且つ感度の良好
な半導体圧力センサを提供することを目的とする。その
ため、本発明の請求項1の半導体圧力センサは、基台上
に設けたセンサ基板の裏面部に所定深さの溝を設けて上
記基台との間に隙間を形成することにより上記センサ基
板の溝を設けた部位をダイヤフラム部とするとともに、
このダイヤフラム部の表面部に半導体ピエゾ抵抗素子を
設けた半導体圧力センサにおいて、上記ダイヤフラム部
を含むセンサ基板の表面にこのセンサ基板表面と略直交
する方向へ延びる力伝達ロッドの平坦な一端部を接合
し、この力伝達ロッドの他端部を受圧部としたことを特
徴とするものである。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems and to provide a semiconductor pressure sensor capable of measuring a high pressure and having high sensitivity as compared with the prior art. Therefore, the semiconductor pressure sensor according to claim 1 of the present invention provides the sensor substrate by forming a groove with a predetermined depth on the back surface of the sensor substrate provided on the base to form a gap with the base. While the part where the groove of was provided is the diaphragm part,
In a semiconductor pressure sensor in which a semiconductor piezoresistive element is provided on the surface of the diaphragm, a flat end of a force transmission rod extending in a direction substantially perpendicular to the surface of the sensor substrate is joined to the surface of the sensor substrate including the diaphragm. The other end of the force transmission rod is used as a pressure receiving portion.
【0007】請求項2の半導体圧力センサは、請求項1
の構成において、上記力伝達ロッドの他端部は略半球状
に形成されていることを特徴とするものである。[0007] The semiconductor pressure sensor according to claim 2 is claim 1.
Wherein the other end of the force transmission rod is formed substantially hemispherically.
【0008】請求項3の半導体圧力センサは、請求項1
または2の構成において、上記力伝達ロッドはセンサ基
板よりもヤング率の小さい材料からなり、この力伝達ロ
ッドの幅寸法が上記ダイヤフラム部の幅寸法以上であ
り、上記力伝達ロッドの長さ寸法が力伝達ロッドの幅寸
法以上であることを特徴とするものである。ここで、力
伝達ロッドの「幅寸法」とは、例えば、力伝達ロッドが
円柱状である場合は直径を意味し、正四角柱状である場
合は、軸方向と直角に切断した正方形断面の一辺の寸法
を意味する。According to a third aspect of the present invention, there is provided a semiconductor pressure sensor.
In the configuration of the second aspect, the force transmission rod is made of a material having a smaller Young's modulus than the sensor substrate, the width of the force transmission rod is equal to or greater than the width of the diaphragm, and the length of the force transmission rod is It is characterized in that it is not less than the width of the force transmission rod. Here, the “width dimension” of the force transmission rod means, for example, a diameter when the force transmission rod is cylindrical, and one side of a square cross section cut at right angles to the axial direction when the force transmission rod is rectangular. Means the dimensions of
【0009】請求項4の半導体圧力センサは、請求項3
の構成において、上記センサ基板のヤング率が略130
GPa以上であるとともに上記力伝達ロッドのヤング率
が略20乃至80GPaの範囲であり、この力伝達ロッ
ドの幅寸法が上記ダイヤフラム部の幅寸法の1.2倍以
上であり、上記力伝達ロッドの長さ寸法が力伝達ロッド
の幅寸法の1.0倍以上であることを特徴とするもので
ある。According to a fourth aspect of the present invention, there is provided a semiconductor pressure sensor.
Wherein the Young's modulus of the sensor substrate is approximately 130
GPa or more and the Young's modulus of the force transmission rod is in the range of approximately 20 to 80 GPa, the width of the force transmission rod is 1.2 times or more the width of the diaphragm, and The length dimension is at least 1.0 times the width dimension of the force transmission rod.
【0010】請求項5の半導体圧力センサは、請求項1
乃至4のいずれかの構成において、上記基台、半導体ピ
エゾ抵抗素子を含むセンサ基板及び力伝達ロッドの外側
を覆うケース部材を設けるとともに、このケース部材の
一端部に設けた受圧ダイヤフラムの内面側を上記力伝達
ロッドの他端部に当接させ、受圧ダイヤフラムの外面側
を被圧力検出媒体に当接させたことを特徴とするもので
ある。[0010] The semiconductor pressure sensor of claim 5 is the first aspect of the present invention.
In any one of the configurations (1) to (4), the base, the sensor substrate including the semiconductor piezoresistive element, and a case member that covers the outside of the force transmitting rod are provided, and the inner surface side of the pressure receiving diaphragm provided at one end of the case member is provided. The force transmitting rod is in contact with the other end, and the outer surface of the pressure receiving diaphragm is in contact with the pressure detection medium.
【0011】請求項6の半導体圧力センサは、請求項5
の構成において、上記基台、半導体ピエゾ抵抗素子を含
むセンサ基板及び力伝達ロッドは上記ケース部材により
力伝達ロッドの長さ方向へ移動自在に支持されているこ
とを特徴としている。According to a sixth aspect of the present invention, there is provided a semiconductor pressure sensor according to the fifth aspect.
In the above structure, the base, the sensor substrate including the semiconductor piezoresistive element, and the force transmission rod are supported by the case member so as to be movable in the length direction of the force transmission rod.
【0012】[0012]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照しながら説明する。この半導体圧力センサ10の
基台及びセンサ基板部分は基本的に図16の従来例と同
様に構成されている。すなわち、図1に示すように、金
属、ガラス、セラミックス等からなる基台11上に、例
えば、厚みが数100μm以下程度のn型シリコンから
なるセンサ基板12が設けられている。このセンサ基板
12の中央付近の裏面部に一定深さ、例えば、100乃
至200μm程度の深さの溝12aが設けられて基台1
1との間に隙間が形成され、センサ基板12における溝
12aにより厚みを減少された部位がダイヤフラム部1
2bとされている。なお、センサ基板12をシリコンで
形成した場合、そのヤング率は130乃至190GPa
程度である。Embodiments of the present invention will be described below with reference to the drawings. The base and sensor substrate of the semiconductor pressure sensor 10 are basically configured in the same manner as the conventional example of FIG. That is, as shown in FIG. 1, a sensor substrate 12 made of, for example, n-type silicon having a thickness of about several hundred μm or less is provided on a base 11 made of metal, glass, ceramics, or the like. A groove 12a having a constant depth, for example, about 100 to 200 μm is provided on the back surface near the center of the sensor substrate 12 so that the base 1
A gap is formed between the diaphragm portion 1 and the portion of the sensor substrate 12 whose thickness is reduced by the groove 12a.
2b. When the sensor substrate 12 is formed of silicon, its Young's modulus is 130 to 190 GPa.
It is about.
【0013】図2にも示すように、センサ基板12は上
方から見て、例えば、一辺の寸法Sが2乃至数mm程度の
正方形状に形成され、溝12a、つまり、ダイヤフラム
部12bの幅寸法Wは数100乃至1000μm程度、
ダイヤフラム部12bの奥行寸法Bが1.5乃至3mm程
度とされる。そして、上記ダイヤフラム部12bの表面
部に、例えば、4つのピエゾ抵抗素子13a乃至13d
が設けられている。各ピエゾ抵抗素子13a乃至13d
はp型シリコンからなるとともに、2つのピエゾ抵抗素
子13a、13dはダイヤフラム部12bの中央部に、
他の2つのピエゾ抵抗素子13b、13cはダイヤフラ
ム部12bの周辺部(幅方向両端部)に設けられてい
る。As shown in FIG. 2, the sensor substrate 12 is formed, for example, in a square shape having a side size S of about 2 to several mm when viewed from above, and has a groove 12a, that is, a width dimension of the diaphragm portion 12b. W is about several hundred to 1,000 μm,
The depth B of the diaphragm portion 12b is set to about 1.5 to 3 mm. Then, for example, four piezoresistive elements 13a to 13d are provided on the surface of the diaphragm 12b.
Is provided. Each piezoresistive element 13a to 13d
Is composed of p-type silicon, and two piezoresistive elements 13a and 13d are provided at the center of the diaphragm 12b.
The other two piezoresistive elements 13b and 13c are provided at the periphery (both ends in the width direction) of the diaphragm 12b.
【0014】図3にピエゾ抵抗素子13bを例示するよ
うに、各ピエゾ抵抗素子13a乃至13dは、例えば、
上方から見て屈曲状に形成され、両端部に各々電極14
が設けられるとともに、これらの電極14から図示しな
い引出配線が引き出されている。各ピエゾ抵抗素子13
a乃至13dは、例えば、図4に示すブリッジ回路を構
成するように上記引出配線同士が接続され、ピエゾ抵抗
素子13a、13c間及び13b、13d間に入力電圧
Vinが印加される一方、ピエゾ抵抗素子13a、13b
間及び13c、13d間から出力電圧Vout が取り出さ
れるようになっている。As shown in FIG. 3, the piezoresistive elements 13a to 13d include, for example, a piezoresistive element 13b.
It is formed in a bent shape when viewed from above, and has electrodes 14 at both ends.
Are provided, and lead wires (not shown) are drawn from these electrodes 14. Each piezoresistive element 13
a to 13d, for example, it is connected to the lead wirings so as to constitute a bridge circuit shown in FIG. 4, while the piezoresistive elements 13a, 13c and between 13b, the input voltage V in across 13d is applied, the piezo Resistance elements 13a, 13b
The output voltage Vout is taken out from between and between 13c and 13d.
【0015】ここで、各ピエゾ抵抗素子13a乃至13
dの抵抗値を各々R1 乃至R4 とし、ダイヤフラム部1
2bの中央部の2つのピエゾ抵抗素子13a、13dの
抵抗値R1 =R4 =RC 、周辺部の2つのピエゾ抵抗素
子13b、13cの抵抗値R 2 =R3 =RS とすると、
図4の回路において下式(4)が成り立つ。 Vout =(ΔRS /RS −ΔRC /RC )Vin/2 ……(4) Here, each of the piezoresistive elements 13a to 13a
The resistance value of d is R1Or RFourAnd the diaphragm part 1
Of the two piezoresistive elements 13a and 13d at the center of
Resistance value R1= RFour= RCTwo peripheral piezoresistors
Resistance value R of child 13b, 13c Two= RThree= RSThen
The following equation (4) holds in the circuit of FIG. Vout= (ΔRS/ RS-ΔRC/ RC) Vin/ 2 (4)
【0016】図1において、ピエゾ抵抗素子13a乃至
13dが設けられたダイヤフラム12bを含むセンサ基
板12の表面上には、円柱状の力伝達ロッド15の平坦
な下端部(一端部)が接着等により接合されている。力
伝達ロッド15はセンサ基板12の表面と直交する方向
へ延び、その平坦な上端部(他端部)上に半球状のヘッ
ド16(受圧部)の平坦な底面が接着等により接合され
ている。ここでは、ヘッド16の直径が力伝達ロッド1
5の直径と等しくされているが、ヘッド16の直径は力
伝達ロッド15の直径より小さくても、或いは大きくて
もよい。なお、ヘッド16は、その頂点付近で圧力を受
けて、これを力伝達ロッド15の横断面内の各部に略均
一に伝達する役割を果たす。In FIG. 1, a flat lower end portion (one end portion) of a cylindrical force transmission rod 15 is adhered to the surface of a sensor substrate 12 including a diaphragm 12b provided with piezoresistive elements 13a to 13d by bonding or the like. Are joined. The force transmitting rod 15 extends in a direction perpendicular to the surface of the sensor substrate 12, and a flat bottom surface of a hemispherical head 16 (pressure receiving portion) is bonded to the flat upper end (other end) by bonding or the like. . Here, the diameter of the head 16 is
5, but the diameter of the head 16 may be smaller or larger than the diameter of the force transmitting rod 15. The head 16 receives a pressure near the apex thereof and plays a role of transmitting the pressure substantially uniformly to each part in the cross section of the force transmission rod 15.
【0017】力伝達ロッド15は、センサ基板12より
ヤング率の小さい材料、具体的にはヤング率が20乃至
80GPaの範囲に含まれる金属、ガラスまたは樹脂材
料等で形成される。なお、力伝達ロッド15の直径D
は、例えば、1乃至2mm程度、長さL(高さ)は、例え
ば、1.5乃至3mm程度とされる。The force transmitting rod 15 is formed of a material having a Young's modulus smaller than that of the sensor substrate 12, specifically, a metal, glass or resin material having a Young's modulus in a range of 20 to 80 GPa. The diameter D of the force transmission rod 15
Is, for example, about 1 to 2 mm, and the length L (height) is, for example, about 1.5 to 3 mm.
【0018】図5に力伝達ロッド15を介してセンサ基
板12に下向きの力を加えた場合のダイヤフラム部12
b周辺の応力分布を模式的に示す。x,y,z方向の応
力σ x ,σy ,σz の極性、つまり、圧縮応力であるか
引張り応力であるかはシリコンの結晶方向に依存する
が、ピエゾ抵抗素子13a、13bの位置するダイヤフ
ラム部12bの中央部付近では、例えば、x方向の応力
σx は負の値を取り、この場合、ダイヤフラム部12b
の周辺部(幅方向両端部)付近ではσx は正の値とな
る。FIG. 5 shows a sensor base via a force transmitting rod 15.
Diaphragm 12 when downward force is applied to plate 12
4 schematically shows a stress distribution around b. Response in x, y, z directions
Force σ x, Σy, ΣzPolarity, that is, whether it is compressive stress
Whether the tensile stress depends on the crystal orientation of silicon
Is a diaphragm in which the piezoresistive elements 13a and 13b are located.
In the vicinity of the center of the ram portion 12b, for example, stress in the x direction
σxTakes a negative value, in this case, the diaphragm portion 12b
Near the periphery (both ends in the width direction)xIs a positive value
You.
【0019】一方、この場合、y及びz方向の応力は、
ダイヤフラム部12bの中央部付近及び周辺部付近共に
負の値となり、且つダイヤフラム部12bの中央部付近
ではσx の絶対値に比べてσy ,σz の絶対値が十分に
小さく、略零と見做すことができる。この図4に表され
た本実施の形態における応力分布を前掲(段落番号00
03参照)の式(1) ΔR/R=πx σx +πy σ
y +πz σz に当てはめると、ダイヤフラム部12bの
中央部付近ではσy ,σz の絶対値を零と近似すること
により、ピエゾ抵抗素子13a、13bの抵抗変化の割
合ΔR/Rの絶対値〔ΔR/R〕は、下式(5)で表さ
れる。 〔ΔR/R〕=〔πx σx 〕 ……(5) この式(5)を従来の半導体圧力センサの式(3)(段
落番号0005)と比較すると、本実施の形態では、X
及びY方向の成分が相殺し合うことがなく、ピエゾ抵抗
効果をより有効に利用して検出感度を向上させることが
可能なことが分かる。On the other hand, in this case, the stress in the y and z directions is
The values near the center and the periphery of the diaphragm portion 12b are negative values, and the absolute values of σ y and σ z are sufficiently smaller than the absolute values of σ x near the center of the diaphragm portion 12b. Can be considered. The stress distribution in the present embodiment shown in FIG.
Formula 03 see) (1) ΔR / R = π x σ x + π y σ
When applied to y + π z σ z , the absolute value of σ y , σ z is approximated to zero near the center of the diaphragm portion 12b, whereby the absolute value of the rate of change in resistance ΔR / R of the piezoresistive elements 13a, 13b is obtained. [ΔR / R] is represented by the following equation (5). [ΔR / R] = [π x σ x ] (5) When this equation (5) is compared with the equation (3) (paragraph number 0005) of the conventional semiconductor pressure sensor, in this embodiment, X
It can be understood that the components in the Y direction and the Y direction do not cancel each other, and the detection sensitivity can be improved by more effectively using the piezoresistance effect.
【0020】また、ダイヤフラム部12bの周辺部付近
においては、σx とσy ,σz が逆極性であり、前述
(段落番号0004)のように、ピエゾ抵抗係数πx と
πy ,πz も逆極性であるから、上記式(1)から、ピ
エゾ抵抗素子13c、13dの抵抗変化の割合ΔR/R
の絶対値〔ΔR/R〕は、下式(6)で表される。 〔ΔR/R〕=〔πx σx 〕+〔πy σy 〕+〔πz σz 〕 ……(6) このように、ダイヤフラム部12bの周辺部付近におい
ては、各方向の成分同士が加算される関係となるので、
従来の半導体圧力センサに比べてピエゾ抵抗効果をより
有効に利用できる。In the vicinity of the periphery of the diaphragm portion 12b, σ x , σ y , and σ z have opposite polarities, and as described above (paragraph number 0004), the piezoresistance coefficients π x , π y , π z Are also of opposite polarity, and from the above equation (1), the rate of change in resistance of the piezoresistive elements 13c and 13d ΔR / R
Is represented by the following equation (6). [[Delta] R / R] = [[pi] x [sigma] x ] + [[pi] y [sigma] y ] + [[pi] z [sigma] z ] (6) As described above, in the vicinity of the periphery of the diaphragm 12b, Is added.
The piezoresistive effect can be used more effectively than a conventional semiconductor pressure sensor.
【0021】なお、図5中の各方向の応力σx ,σy ,
σz の分布を示す曲線の傾きは、力伝達ロッド15を構
成する材料のヤング率や、力伝達ロッド15の直径Dと
長さLとの比、ダイヤフラム部12bの厚み等の条件に
応じて変化し、これらの条件の組合せによっては、図4
におけるダイヤフラム部12bの周辺部付近のσx が負
の値を取り、上記の式(5)及び(6)が成立しない場
合もある。It should be noted that the stresses σ x , σ y ,
The slope of the curve showing the distribution of σ z depends on conditions such as the Young's modulus of the material constituting the force transmission rod 15, the ratio of the diameter D to the length L of the force transmission rod 15, the thickness of the diaphragm portion 12b, and the like. And depending on the combination of these conditions,
The value of σ x near the periphery of the diaphragm portion 12b in (2) takes a negative value, and the above equations (5) and (6) may not be satisfied.
【0022】そこで、本発明者はFEM(Finite Eleme
nt Method:有限要素法)を用いて、 力伝達ロッド1
5のヤング率、 力伝達ロッド15の長さL、 力
伝達ロッド15の直径D、 ダイヤフラム部12bの
厚みの4種類の条件の組合せを種々に変化させながら、
各方向の応力σx ,σy ,σz の分布を数値的に解析す
ることにより、上記ヤング率や各種寸法の好適な範囲を
求めた。ここで、センサ基板12の厚みは300μm、
センサ基板12の一辺の寸法Sは3000μm、ダイヤ
フラム部12bの幅寸法Wは750μm、奥行寸法Bは
2000μmとした。解析条件を以下に示す。Therefore, the present inventor has proposed a FEM (Finite Eleme).
nt Method: Finite Element Method)
While changing various combinations of the four conditions of the Young's modulus of 5, the length L of the force transmission rod 15, the diameter D of the force transmission rod 15, and the thickness of the diaphragm portion 12b,
By analyzing numerically the distribution of the stresses σ x , σ y , and σ z in each direction, the above-described Young's modulus and suitable ranges of various dimensions were obtained. Here, the thickness of the sensor substrate 12 is 300 μm,
The dimension S of one side of the sensor substrate 12 was 3000 μm, the width W of the diaphragm portion 12b was 750 μm, and the depth B was 2000 μm. The analysis conditions are shown below.
【0023】(1) 解析モデル センサ基板12及
び力伝達ロッド15から構成された1/4モデルを用い
た。 (2) 境界条件 センサ基板12の下面のすべて
の節点をx,y,z方向において完全拘束した。1/4
モデルであるため、y軸上の点をx方向に拘束、x軸上
の点をy方向に拘束した。 (3) 荷重条件 荷重条件として37.5Nを力
伝達ロッド15の上面の中心に与えた。 (4) 材料特性 シリコンは解析を容易にするた
め、便宜上、等方性材料として扱い、ヤング率=170
GPa、ポアソン比=0.25とした。(1) Analytical Model A 1/4 model composed of the sensor substrate 12 and the force transmitting rod 15 was used. (2) Boundary conditions All nodes on the lower surface of the sensor substrate 12 were completely constrained in the x, y, and z directions. 1/4
Since this is a model, points on the y-axis are constrained in the x direction, and points on the x-axis are constrained in the y direction. (3) Load Condition As a load condition, 37.5 N was applied to the center of the upper surface of the force transmission rod 15. (4) Material properties Silicon is treated as an isotropic material for ease of analysis, and Young's modulus is 170
GPa and Poisson's ratio = 0.25.
【0024】上記の条件に基づいて解析を行い、力伝達
ロッド15のヤング率=70GPa、力伝達ロッド15
の長さL=2.0mm、直径D=1.5mm、ダイヤフラム
部12bの厚み=200μmを標準モデルとした。この
標準モデルに対して、上記乃至の各項目を以下の表
1に示す範囲内で各々変化させた時のダイヤフラム部1
2b上に作用する応力成分σx ,σy ,σz の変化の様
子を上記FEM解析により求めた。An analysis is performed based on the above conditions, and the Young's modulus of the force transmitting rod 15 is 70 GPa, and the force transmitting rod 15
The length L = 2.0 mm, the diameter D = 1.5 mm, and the thickness of the diaphragm 12b = 200 μm were used as standard models. With respect to this standard model, the diaphragm unit 1 when each of the above items was changed within the range shown in Table 1 below
Changes in the stress components σ x , σ y , σ z acting on 2b were obtained by the FEM analysis.
【0025】[0025]
【表1】 [Table 1]
【0026】図6乃至図8に解析結果の一例として、表
1中の力伝達ロッド15のヤング率を20乃至210
GPaの範囲で変化させ、それ以外の乃至のパラメ
ータを上記標準モデルの値とした場合のx,y,z方向
の応力成分σx ,σy ,σzの分布を各々示す。各図の
横軸はダイヤフラム部12bの幅方向中心位置からの距
離であり、ここではダイヤフラム部12bの幅寸法Wを
750μmとしているので、ダイヤフラム部12bの幅
方向端部における距離は375μmとなる。FIGS. 6 to 8 show an example of the analysis results, where the Young's modulus of the force transmitting rod 15 in Table 1 is 20 to 210.
The distribution of stress components σ x , σ y , and σ z in the x, y, and z directions when the parameters are changed in the range of GPa and other parameters are used as the values of the standard model are shown. The horizontal axis in each drawing is the distance from the center of the diaphragm 12b in the width direction. Since the width W of the diaphragm 12b is 750 μm, the distance at the width direction end of the diaphragm 12b is 375 μm.
【0027】図6乃至図8から明らかなように、ヤング
率が低い程、各応力成分の絶対値が大きくなるため、検
出感度は良好になる(式(5)(6)参照)。必要な検
出感度を得、且つダイヤフラム部12bの周辺部におけ
る応力成分σx を正の極性とするためには、力伝達ロッ
ド15のヤング率は上記のように20乃至80GPaの
範囲が好適である。As is clear from FIGS. 6 to 8, the lower the Young's modulus, the greater the absolute value of each stress component, and the better the detection sensitivity (see equations (5) and (6)). In order to obtain the necessary detection sensitivity and to make the stress component σ x in the peripheral portion of the diaphragm portion 12b have a positive polarity, the Young's modulus of the force transmission rod 15 is preferably in the range of 20 to 80 GPa as described above. .
【0028】次に、ダイヤフラム部12bの中央部のピ
エゾ抵抗素子13a、13d及び周辺部のピエゾ抵抗素
子13b、13cについて、各々表1中の4種類のパラ
メータが変化した場合に中央部のピエゾ抵抗素子13
a、13dの抵抗変化率ΔRC/RC と周辺部のピエゾ
抵抗素子13b、13cの抵抗変化率ΔRS /RS とが
どのように変化するかを計算により求めた結果を図9乃
至図12に示す。Next, regarding the piezoresistive elements 13a and 13d at the center of the diaphragm section 12b and the piezoresistive elements 13b and 13c at the periphery, when the four types of parameters shown in Table 1 are changed, the piezoresistors at the center are changed. Element 13
9 to FIG. 9 to FIG. 9 to FIG. 9 show the calculation results of how the resistance change rate ΔR C / R C of the a and 13d and the resistance change rate ΔR S / R S of the peripheral piezoresistive elements 13b and 13c change. FIG.
【0029】図9は力伝達ロッド15のヤング率と抵抗
変化率との関係を示しており、曲線Iはダイヤフラム部
12bの中央部のピエゾ抵抗素子13a、13dの抵抗
変化率ΔRC /RC であり、曲線IIは周辺部のピエゾ抵
抗素子13b、13cの抵抗変化率ΔRS /RS であ
る。前述のように、ヤング率が20乃至80GPaの範
囲では、抵抗変化率の絶対値が比較的大きく、良好な感
度が得られやすい。FIG. 9 shows the relationship between the Young's modulus of the force transmission rod 15 and the resistance change rate. The curve I represents the resistance change rate ΔR C / R C of the piezoresistive elements 13a and 13d at the center of the diaphragm 12b. And a curve II represents a resistance change rate ΔR S / R S of the piezoresistive elements 13b and 13c at the peripheral portion. As described above, when the Young's modulus is in the range of 20 to 80 GPa, the absolute value of the resistance change rate is relatively large, and good sensitivity is easily obtained.
【0030】図10は力伝達ロッド15の長さL(高
さ)と抵抗変化率との関係を示しており、曲線Iはダイ
ヤフラム部12bの中央部のピエゾ抵抗素子13a、1
3dの抵抗変化率ΔRC /RC であり、曲線IIは周辺部
のピエゾ抵抗素子13b、13cの抵抗変化率ΔRS /
RS である。曲線I、IIから明らかなように、長さLが
1.5mm以上では抵抗変化率が略一定となるが、これは
長さLが1.5mm以上では各方向の応力成分σx ,
σy ,σz の大きさが略一定となるためである。従っ
て、力伝達ロッド15の長さLは1.5mm以上とするの
が好ましい。FIG. 10 shows the relationship between the length L (height) of the force transmitting rod 15 and the rate of change in resistance. The curve I represents the piezoresistive elements 13a, 13a, 1b at the center of the diaphragm 12b.
The resistance change rate ΔR C / RC of 3d, and the curve II shows the resistance change rate ΔR S / R of the peripheral piezoresistive elements 13b and 13c.
R S. As is clear from the curves I and II, when the length L is 1.5 mm or more, the resistance change rate is substantially constant. However, when the length L is 1.5 mm or more, the stress components σ x ,
This is because the magnitudes of σ y and σ z are substantially constant. Therefore, it is preferable that the length L of the force transmission rod 15 be 1.5 mm or more.
【0031】図11は力伝達ロッド15の直径Dと抵抗
変化率との関係を示しており、曲線Iはダイヤフラム部
12bの中央部のピエゾ抵抗素子13a、13dの抵抗
変化率ΔRC /RC であり、曲線IIは周辺部のピエゾ抵
抗素子13b、13cの抵抗変化率ΔRS /RS であ
る。曲線I、IIから明らかなように、直径Dは小さい方
が感度は良好である。しかしながら、直径Dが小さすぎ
ると、力伝達ロッド15の外周部における応力のピーク
位置がダイヤフラム部12bの周辺部のピエゾ抵抗素子
13b、13cが設けられた位置に近くなるので、力伝
達ロッド15をセンサ基板12に取り付ける際のアライ
メント誤差による出力特性のばらつきが大きくなる恐れ
がある。従って、直径Dはダイヤフラム部12bの幅寸
法W(ここでは750μm)の略1.2倍以上、例え
ば、1.0mm以上とすることが好ましい。FIG. 11 shows the relationship between the diameter D of the force transmitting rod 15 and the resistance change rate. The curve I shows the resistance change rate ΔR C / R C of the piezoresistive elements 13a and 13d at the center of the diaphragm 12b. And a curve II represents a resistance change rate ΔR S / R S of the piezoresistive elements 13b and 13c at the peripheral portion. As is clear from the curves I and II, the smaller the diameter D, the better the sensitivity. However, if the diameter D is too small, the peak position of the stress in the outer peripheral portion of the force transmitting rod 15 becomes close to the position where the piezoresistive elements 13b and 13c are provided in the peripheral portion of the diaphragm portion 12b. There is a possibility that the variation in output characteristics due to an alignment error at the time of attachment to the sensor substrate 12 increases. Therefore, it is preferable that the diameter D is approximately 1.2 times or more, for example, 1.0 mm or more, of the width W (750 μm in this case) of the diaphragm portion 12b.
【0032】なお、上記した力伝達ロッド15の長さL
が1.5mm以上、直径Dが1.5mm程度なる値は、上述
のように、センサ基板12の厚みを300μm、一辺の
寸法Sを3000μm、ダイヤフラム部12bの幅寸法
Wを750μmとした場合に対応したサイズであって、
半導体圧力センサ10の用途等に応じて、センサ基板1
2やダイヤフラム部12bのサイズを変更した場合にそ
れに応じて力伝達ロッド15の長さL、直径Dの最適値
も当然に変化する。従って、力伝達ロッド15の長さL
と直径Dとの比がより重要であるが、この比の目安とし
ては、長さLが直径D以上であればよい。The length L of the force transmitting rod 15
Is 1.5 mm or more and the diameter D is about 1.5 mm, as described above, when the thickness of the sensor substrate 12 is 300 μm, the dimension S of one side is 3000 μm, and the width W of the diaphragm 12 b is 750 μm. The corresponding size,
Depending on the application of the semiconductor pressure sensor 10, etc., the sensor substrate 1
When the size of the diaphragm 2 or the size of the diaphragm portion 12b is changed, the optimum values of the length L and the diameter D of the force transmission rod 15 naturally change accordingly. Therefore, the length L of the force transmission rod 15
The ratio of the diameter D to the diameter D is more important, but the ratio may be determined as long as the length L is equal to or larger than the diameter D.
【0033】図12はダイヤフラム部12bの厚みと抵
抗変化率との関係を示しており、曲線Iはダイヤフラム
部12bの中央部のピエゾ抵抗素子13a、13dの抵
抗変化率ΔRC /RC であり、曲線IIは周辺部のピエゾ
抵抗素子13b、13cの抵抗変化率ΔRS /RS であ
る。曲線I、IIから明らかなように、中央部のピエゾ抵
抗素子13a、13dは厚み200μmと150μmで
は余り変化がなく、100μm以下では抵抗変化率ΔR
C /RC は零に近づく。FIG. 12 shows the relationship between the thickness of the diaphragm portion 12b and the resistance change rate. A curve I represents the resistance change rate ΔR C / R C of the piezoresistive elements 13a and 13d at the center of the diaphragm portion 12b. , Curve II represents the resistance change rate ΔR S / R S of the peripheral piezoresistive elements 13b and 13c. As is clear from the curves I and II, the piezoresistive elements 13a and 13d at the center have little change at the thicknesses of 200 μm and 150 μm, and the resistance change rate ΔR at 100 μm or less.
C / RC approaches zero.
【0034】周辺部のピエゾ抵抗素子13b、13cは
厚み100μmの時に最も抵抗変化率ΔRS /RS が大
きい。中央部と周辺部のバランスを考慮すると、厚み1
50μmのものが最も感度は良好である。なお、この最
適感度が得られる150μmなる厚みも、ダイヤフラム
部12bの幅寸法Wを750μmとした場合の値であっ
て、ダイヤフラム12bの幅寸法自体が変化した場合
は、最適感度を得るためのダイヤフラム部12bの厚み
もそれに応じて変化することは言うまでもない。The peripheral piezoresistive elements 13b and 13c have the largest resistance change rate ΔR S / R S when the thickness is 100 μm. Considering the balance between the central part and the peripheral part,
The one with 50 μm has the best sensitivity. The thickness of 150 μm at which the optimum sensitivity is obtained is also a value when the width W of the diaphragm 12b is 750 μm, and when the width itself of the diaphragm 12b changes, the diaphragm for obtaining the optimum sensitivity is obtained. It goes without saying that the thickness of the portion 12b also changes accordingly.
【0035】以上のような解析結果に基づいて、図1に
示した外形と表1の標準モデルに示した寸法とを有する
半導体圧力センサ10を実際に製作した。すなわち、力
伝達ロッド15の材料としてヤング率70GPaのジュ
ラルミンを使用し、長さLを1.8mm、直径Dを1.5
mmとするとともに、ヘッド16の直径を1.0mmとし、
且つ前述の通り、センサ基板12の一辺の寸法Sを30
00μm、センサ基板12の厚みを300μm、ダイヤ
フラム部12bの幅寸法Wを750μm、奥行寸法Bを
2000μmとした。また、基台11としては直径20
mm、厚み1.0mmの円板状のステンレス鋼を用い、各部
の接着にはエポキシ系接着剤を用いた。Based on the above analysis results, a semiconductor pressure sensor 10 having the outer shape shown in FIG. 1 and the dimensions shown in the standard model of Table 1 was actually manufactured. That is, duralumin having a Young's modulus of 70 GPa is used as the material of the force transmission rod 15, the length L is 1.8 mm, and the diameter D is 1.5.
mm and the diameter of the head 16 is 1.0 mm,
Further, as described above, the dimension S of one side of the sensor substrate 12 is set to 30.
The thickness of the sensor substrate 12 was 300 μm, the width W of the diaphragm portion 12b was 750 μm, and the depth B was 2000 μm. The base 11 has a diameter of 20 mm.
A disk-shaped stainless steel having a thickness of 1.0 mm and a thickness of 1.0 mm was used, and an epoxy-based adhesive was used for bonding each part.
【0036】この半導体圧力センサ10に万能試験器
(INSTRON 社のModel 4206)を用いて最大150Nまで
の荷重を印加し、各ピエゾ抵抗素子13a乃至13dの
抵抗変化率を実際に測定した結果を図13に各々曲線I
乃至IVで示す。図13から明らかなように、抵抗変化率
は荷重に略比例して変化している。また、本発明では、
センサ基板12に直接外力を印加する代わりに、力伝達
ロッド15を介して印加しているので、最大150N程
度と、従来の半導体圧力センサの約2倍程度の高圧の測
定が可能である。A load of up to 150 N was applied to the semiconductor pressure sensor 10 using a universal tester (Model 4206 of INSTRON), and the results of actually measuring the resistance change rates of the piezoresistive elements 13a to 13d are shown in FIG. 13 shows each curve I
To IV. As is clear from FIG. 13, the resistance change rate changes substantially in proportion to the load. In the present invention,
Since the external force is applied to the sensor substrate 12 via the force transmission rod 15 instead of directly applied thereto, it is possible to measure a high pressure of up to about 150 N, which is about twice as high as that of a conventional semiconductor pressure sensor.
【0037】上記実際に製作した半導体圧力センサ10
を用いて、荷重と出力電圧Vout (段落番号0015の
式(4)参照)との関係を測定した結果を図14に示
す。なお、入力電圧Vinは5Vとした。図14から明ら
かなように、荷重と出力電圧との略比例関係にある。The semiconductor pressure sensor 10 actually manufactured above
FIG. 14 shows the result of measuring the relationship between the load and the output voltage V out (see the equation (4) in paragraph 0015) by using FIG. It should be noted that the input voltage V in is set to 5V. As is clear from FIG. 14, there is a substantially proportional relationship between the load and the output voltage.
【0038】次に、上記半導体圧力センサ10をケース
部材内に収容した実施の形態を図15に示す。半導体圧
力センサ10の各部は図1と同様の構成を有し、共通す
る部位に同一の参照番号を付している。例えば、ステン
レス鋼等の金属からなるケース部材20は下方が開いた
略円柱状に形成され、その上部には受圧ダイヤフラム2
1を一体的に備えるとともに、この受圧ダイヤフラム2
1の中央部には下方へ膨出する膨出部21aが設けられ
ている。また、ケース部材20の下端部近傍の内周面に
は雌ねじ20aが形成される一方、外周面には被圧力検
出部位への取付用の雄ねじ20bが形成されている。Next, an embodiment in which the semiconductor pressure sensor 10 is housed in a case member is shown in FIG. Each part of the semiconductor pressure sensor 10 has the same configuration as that of FIG. 1, and common parts are denoted by the same reference numerals. For example, the case member 20 made of a metal such as stainless steel is formed in a substantially columnar shape with an open lower part, and the pressure receiving diaphragm 2
1 and the pressure receiving diaphragm 2
A bulging portion 21a that bulges downward is provided at the center of 1. A female screw 20a is formed on the inner peripheral surface near the lower end of the case member 20, and a male screw 20b for attachment to the pressure detection site is formed on the outer peripheral surface.
【0039】ケース部材20内の下部には金属製の調節
部材22が配置され、この調節部材22上に半導体圧力
センサ10が固定されている。調節部材22は外周に設
けた雄ねじ22aが上記雌ねじ20aに螺合することに
より、半導体圧力センサ10とともにケース部材20に
対して上下動自在とされている。半導体圧力センサ10
をケース部材20内に収容する際には、ケース部材20
に対して調節部材22を回転させて半導体圧力センサ1
0をケース部材20内で上下動させ、ヘッド16の膨出
部21aに対する当接具合を調節することにより、半導
体圧力センサ10で適正な感度が得られるように調整す
ればよい。A metal adjustment member 22 is arranged at a lower portion in the case member 20, and the semiconductor pressure sensor 10 is fixed on the adjustment member 22. The adjusting member 22 is vertically movable with respect to the case member 20 together with the semiconductor pressure sensor 10 when a male screw 22a provided on the outer periphery is screwed into the female screw 20a. Semiconductor pressure sensor 10
When accommodating in the case member 20, the case member 20
The adjustment member 22 with respect to the semiconductor pressure sensor 1
The semiconductor pressure sensor 10 may be adjusted so as to obtain an appropriate sensitivity by moving the head 0 up and down in the case member 20 and adjusting the contact state of the head 16 with the bulging portion 21a.
【0040】その後、本半導体圧力センサ10をケース
部材20とともに雄ねじ20b等で被圧力検出部位、例
えば、射出成形機等に取り付けて被圧力検出媒体を受圧
ダイヤフラム21の外面側(上面側)に当接させれば、
上記被圧力検出部位の圧力が受圧ダイヤフラム21を介
してヘッド16に伝達され、半導体圧力センサ10によ
って圧力の検出が行われる。Thereafter, the semiconductor pressure sensor 10 is attached to a pressure detection site, for example, an injection molding machine or the like, together with the case member 20 with a male screw 20b or the like, and the pressure detection medium is applied to the outer surface side (upper surface side) of the pressure receiving diaphragm 21. If you touch
The pressure at the pressure detection site is transmitted to the head 16 via the pressure receiving diaphragm 21, and the pressure is detected by the semiconductor pressure sensor 10.
【0041】上記の実施の形態では、センサ基板12及
びピエゾ抵抗素子13a乃至13dをn型及びp型のシ
リコンで形成したが、センサ基板12及びピエゾ抵抗素
子13a乃至13dをそれぞれp型及びn型のシリコン
で形成してもよい。また、センサ基板12及びピエゾ抵
抗素子13a乃至13dをゲルマニウム等、他の半導体
で形成してもよい。また、ピエゾ抵抗素子13a乃至1
3dの個数は、2個以上の任意の個数とすることができ
る。In the above embodiment, the sensor substrate 12 and the piezoresistive elements 13a to 13d are formed of n-type and p-type silicon. However, the sensor substrate 12 and the piezoresistive elements 13a to 13d are formed of p-type and n-type Of silicon. Further, the sensor substrate 12 and the piezoresistive elements 13a to 13d may be formed of another semiconductor such as germanium. Also, the piezoresistive elements 13a to 13a
The number of 3d can be any number of 2 or more.
【0042】さらに、力伝達ロッド15は円柱状以外に
角柱状等の形状としてもよく、力伝達ロッド15の横断
面内の各部で略均一に力を伝達できる限り、半球状のヘ
ッド16は必ずしも設ける必要はない。なお、力伝達ロ
ッド15は、ヤング率が20乃至80GPa程度の範囲
の材料であれば、上記ジュラルミン以外の金属または合
金やガラス及び合成樹脂等の各種材料で形成することが
できる。Further, the force transmission rod 15 may be formed in a shape other than a cylinder, such as a prism, etc., and the head 16 having a hemispherical shape is not necessarily required as long as the force can be transmitted substantially uniformly in each section in the cross section of the force transmission rod 15. No need to provide. The force transmission rod 15 can be formed of various materials such as metals or alloys other than the above duralumin, glass, and synthetic resin as long as the material has a Young's modulus in a range of about 20 to 80 GPa.
【0043】[0043]
【発明の効果】本発明の請求項1の半導体圧力センサ
は、基台上に設けたセンサ基板の裏面部に所定深さの溝
を設けて上記基台との間に隙間を形成することにより上
記センサ基板の溝を設けた部位をダイヤフラム部とする
とともに、このダイヤフラム部の表面部に半導体ピエゾ
抵抗素子を設けた半導体圧力センサにおいて、上記ダイ
ヤフラム部を含むセンサ基板の表面にこのセンサ基板表
面と略直交する方向へ延びる力伝達ロッドの平坦な一端
部を接合し、この力伝達ロッドの他端部を受圧部とした
ものであり、従来のようにセンサ基板のダイヤフラム部
に直接圧力を加える代わりに、力伝達ロッドを介してダ
イヤフラム部に圧力を印加するようにしたので、力伝達
ロッドの上記他端部に従来より高い圧力が加わっても力
伝達ロッドで緩衝されるため上記圧力がそのままセンサ
基板に伝達されることがなく、結果として従来より高い
圧力の測定が可能となる。According to the semiconductor pressure sensor of the first aspect of the present invention, a groove having a predetermined depth is provided on the back surface of a sensor substrate provided on a base to form a gap between the sensor and the base. A portion of the sensor substrate provided with the groove is a diaphragm portion, and in a semiconductor pressure sensor having a semiconductor piezoresistive element provided on a surface portion of the diaphragm portion, the surface of the sensor substrate including the diaphragm portion is provided with a surface of the sensor substrate. A flat end of a force transmission rod extending in a direction substantially perpendicular to the end is joined, and the other end of the force transmission rod is used as a pressure receiving portion. Instead of applying pressure directly to the diaphragm portion of the sensor substrate as in the related art. Since the pressure is applied to the diaphragm through the force transmission rod, even if a higher pressure is applied to the other end of the force transmission rod than before, the force is absorbed by the force transmission rod. Without because the pressure is transmitted directly to the sensor substrate, it is possible to measure the pressure higher than the conventional as a result.
【0044】請求項2の半導体圧力センサは、請求項1
の構成において、上記力伝達ロッドの他端部は略半球状
に形成されているものであり、この略半球状の中央の頂
点近傍で圧力を受けることにより、力伝達ロッドの横断
面内の各部で略均一に力を伝達することができ、その結
果、力伝達ロッドの上記一端部からセンサ基板表面に略
均一に力が加わるようになるので、半導体ピエゾ抵抗素
子による圧力の検出精度は良好なものとなる。According to a second aspect of the present invention, there is provided a semiconductor pressure sensor.
In the configuration of the above, the other end of the force transmission rod is formed in a substantially hemispherical shape, and by receiving pressure near the top of the center of the substantially hemisphere, each part in the cross section of the force transmission rod is The force can be transmitted substantially uniformly, and as a result, the force is applied substantially uniformly to the sensor substrate surface from the one end of the force transmission rod, so that the pressure detection accuracy of the semiconductor piezoresistive element is good. It will be.
【0045】請求項3の半導体圧力センサは、請求項1
または2の構成において、上記力伝達ロッドをセンサ基
板よりもヤング率の小さい材料から構成し、この力伝達
ロッドの幅寸法を上記ダイヤフラム部の幅寸法以上と
し、上記力伝達ロッドの長さ寸法を力伝達ロッドの幅寸
法以上としたものであり、本発明者は実験を繰り返すこ
とにより、力伝達ロッドのヤング率、幅及び長さ寸法を
上記のように設定することによって、より高圧に耐える
ことができるとともに、圧力の検出感度を向上させるこ
とができることを見い出し、上記設定の半導体圧力セン
サを提供するものである。なお、上記設定により圧力の
検出感度が向上する理由は、圧力印加時のピエゾ抵抗素
子の抵抗変化の割合ΔR/Rを示す前記式ΔR/R=π
x σx +π y σy +πz σz (段落番号0003参照)
において、πy σy 及びπz σz を略零とすることがで
きるか、πy σy 及びπz σz をπx σx と同一極性と
することができ、これにより、ΔR/Rの絶対値を大き
くすることができるためである。According to a third aspect of the present invention, there is provided a semiconductor pressure sensor according to the first aspect.
Or in the configuration of 2, the force transmission rod is connected to a sensor base.
It is made of a material whose Young's modulus is smaller than that of the plate.
Make sure that the rod width is greater than the diaphragm
And the length of the power transmission rod is set to the width of the power transmission rod.
The inventor repeated experiments.
And the Young's modulus, width and length of the force transmission rod
Withstands higher pressure by setting as above
And improve the sensitivity of pressure detection.
And the semiconductor pressure sensor with the above settings
Provide Note that the pressure
The reason that the detection sensitivity is improved is that the piezoresistive element when pressure is applied
The above equation ΔR / R = π indicating the rate of resistance change ΔR / R of the element
xσx+ Π yσy+ Πzσz(See paragraph 0003)
Where πyσyAnd πzσzCan be made substantially zero.
Or πyσyAnd πzσzTo πxσxWith the same polarity as
This makes it possible to increase the absolute value of ΔR / R.
This is because
【0046】請求項4の半導体圧力センサは、請求項3
の構成において、上記センサ基板のヤング率を略130
GPa以上とするとともに上記力伝達ロッドのヤング率
を略20乃至80GPaの範囲とし、この力伝達ロッド
の幅寸法を上記ダイヤフラム部の幅寸法の1.2倍以上
とし、上記力伝達ロッドの長さ寸法を力伝達ロッドの幅
寸法の1.0倍以上としたものであり、本発明者は実験
を繰り返すことにより、上記設定によって半導体圧力セ
ンサが一層高い圧力に耐えることができるとともに、圧
力の検出感度を一層向上させることができることを見い
出したものである。According to a fourth aspect of the present invention, there is provided a semiconductor pressure sensor according to the third aspect.
In the configuration described above, the Young's modulus of the sensor
GPa or more and the Young's modulus of the force transmission rod is in the range of approximately 20 to 80 GPa, the width of the force transmission rod is 1.2 times or more the width of the diaphragm, and the length of the force transmission rod is The dimension is set to be at least 1.0 times the width of the force transmission rod. The inventor repeats the experiment, and the above setting allows the semiconductor pressure sensor to withstand a higher pressure and detects the pressure. It has been found that the sensitivity can be further improved.
【0047】請求項5の半導体圧力センサは、請求項1
乃至4のいずれかの構成において、上記基台、半導体ピ
エゾ抵抗素子を含むセンサ基板及び力伝達ロッドの外側
を覆うケース部材を設けるとともに、このケース部材の
一端部に設けた受圧ダイヤフラムの内面側を上記力伝達
ロッドの他端部に当接させ、受圧ダイヤフラムの外面側
を被圧力検出媒体に当接させたものであり、上記ケース
部材を設けることにより半導体圧力センサの耐久性を向
上させて長寿命化を図ることができるとともに、被圧力
検出部位に対する半導体圧力センサの取付等の作業も容
易に行える利点がある。According to a fifth aspect of the present invention, there is provided a semiconductor pressure sensor.
In any one of the configurations (1) to (4), the base, the sensor substrate including the semiconductor piezoresistive element, and a case member that covers the outside of the force transmitting rod are provided, and the inner surface side of the pressure receiving diaphragm provided at one end of the case member is provided. The pressure transmitting diaphragm is brought into contact with the other end of the force transmitting rod, and the outer surface of the pressure receiving diaphragm is brought into contact with the pressure detection medium. By providing the case member, the durability of the semiconductor pressure sensor is improved. There is an advantage that the service life can be prolonged, and the work of attaching the semiconductor pressure sensor to the pressure detection site can be easily performed.
【0048】請求項6の半導体圧力センサは、請求項5
の構成において、上記基台、半導体ピエゾ抵抗素子を含
むセンサ基板及び力伝達ロッドは上記ケース部材により
力伝達ロッドの長さ方向へ移動自在に支持されているも
のであるから、力伝達ロッド等をケース部材に対して相
対移動させることにより、ケース部材の上記受圧ダイヤ
フラムに対する力伝達ロッドの上記他端部の当接具合を
調整して、半導体ピエゾ抵抗素子による検出感度が最も
良好となるように調整することができる。According to a sixth aspect of the present invention, there is provided a semiconductor pressure sensor according to the fifth aspect.
In the above structure, the base, the sensor substrate including the semiconductor piezoresistive element, and the force transmission rod are supported by the case member so as to be movable in the longitudinal direction of the force transmission rod. By moving the case member relative to the case member, the abutting condition of the other end of the force transmitting rod with respect to the pressure receiving diaphragm of the case member is adjusted, so that the detection sensitivity by the semiconductor piezoresistive element becomes the best. can do.
【図1】本発明の実施の形態に係る半導体圧力センサを
示す概略断面図。FIG. 1 is a schematic sectional view showing a semiconductor pressure sensor according to an embodiment of the present invention.
【図2】上記半導体圧力センサのセンサ基板を示す概略
平面図。FIG. 2 is a schematic plan view showing a sensor substrate of the semiconductor pressure sensor.
【図3】上記半導体圧力センサのピエゾ抵抗素子を示す
拡大説明図。FIG. 3 is an enlarged explanatory view showing a piezoresistive element of the semiconductor pressure sensor.
【図4】上記半導体圧力センサの各ピエゾ抵抗素子から
の引出配線の接続関係を示す回路図。FIG. 4 is a circuit diagram showing a connection relationship of lead wires from each piezoresistive element of the semiconductor pressure sensor.
【図5】上記半導体圧力センサのダイヤフラム部におけ
る応力分布を示す説明図。FIG. 5 is an explanatory diagram showing a stress distribution in a diaphragm portion of the semiconductor pressure sensor.
【図6】上記半導体圧力センサのダイヤフラム部におけ
るx方向の応力成分の分布を解析した結果を示すグラ
フ。FIG. 6 is a graph showing the result of analyzing the distribution of stress components in the x direction in the diaphragm of the semiconductor pressure sensor.
【図7】上記半導体圧力センサのダイヤフラム部におけ
るy方向の応力成分の分布を解析した結果を示すグラ
フ。FIG. 7 is a graph showing a result of analyzing a distribution of a stress component in a y-direction in a diaphragm portion of the semiconductor pressure sensor.
【図8】上記半導体圧力センサのダイヤフラム部におけ
るz方向の応力成分の分布を解析した結果を示すグラ
フ。FIG. 8 is a graph showing a result of analyzing a distribution of a stress component in a z-direction in a diaphragm portion of the semiconductor pressure sensor.
【図9】上記半導体圧力センサの力伝達ロッドのヤング
率とピエゾ抵抗素子の抵抗変化率との関係を計算で求め
た結果を示すグラフ。FIG. 9 is a graph showing a calculation result of a relationship between a Young's modulus of a force transmission rod of the semiconductor pressure sensor and a resistance change rate of a piezoresistive element.
【図10】上記半導体圧力センサの力伝達ロッドの長さ
とピエゾ抵抗素子の抵抗変化率との関係を計算で求めた
結果を示すグラフ。FIG. 10 is a graph showing a calculation result of a relationship between a length of a force transmission rod of the semiconductor pressure sensor and a resistance change rate of a piezoresistive element.
【図11】上記半導体圧力センサの力伝達ロッドの直径
とピエゾ抵抗素子の抵抗変化率との関係を計算で求めた
結果を示すグラフ。FIG. 11 is a graph showing a result obtained by calculating a relationship between a diameter of a force transmission rod of the semiconductor pressure sensor and a resistance change rate of a piezoresistive element.
【図12】上記半導体圧力センサのダイヤフラム部の厚
みとピエゾ抵抗素子の抵抗変化率との関係を計算で求め
た結果を示すグラフ。FIG. 12 is a graph showing a calculation result of a relationship between a thickness of a diaphragm portion of the semiconductor pressure sensor and a resistance change rate of a piezoresistive element.
【図13】実際に製作した本発明の半導体圧力センサに
おける荷重と抵抗変化率との関係を測定した結果を示す
グラフ。FIG. 13 is a graph showing the results of measuring the relationship between the load and the rate of change of resistance in a semiconductor pressure sensor of the present invention actually manufactured.
【図14】実際に製作した本発明の半導体圧力センサに
おける荷重と出力電圧との関係を測定した結果を示すグ
ラフ。FIG. 14 is a graph showing a result of measuring a relationship between a load and an output voltage in an actually manufactured semiconductor pressure sensor of the present invention.
【図15】上記半導体圧力センサをケース部材内に収容
した本発明の実施の形態を示す断面説明図FIG. 15 is an explanatory sectional view showing an embodiment of the present invention in which the semiconductor pressure sensor is housed in a case member.
【図16】従来の半導体圧力センサを示す概略断面図。FIG. 16 is a schematic sectional view showing a conventional semiconductor pressure sensor.
【図17】従来の半導体圧力センサにおけるダイヤフラ
ム部の応力分布を示す説明図。FIG. 17 is an explanatory diagram showing a stress distribution of a diaphragm in a conventional semiconductor pressure sensor.
10 半導体圧力センサ 11 基台 12 センサ基板 12a 溝 12b ダイヤフラム部 13a乃至13d ピエゾ抵抗素子 15 力伝達ロッド 17 ケース部材 21 受圧ダイヤフラム DESCRIPTION OF SYMBOLS 10 Semiconductor pressure sensor 11 Base 12 Sensor board 12a Groove 12b Diaphragm part 13a to 13d Piezoresistive element 15 Force transmission rod 17 Case member 21 Pressure receiving diaphragm
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鳥山 寿之 滋賀県草津市野路東1−1−1 立命館大 学 びわこ・くさつキャンパス 理工学部 内 (72)発明者 大田 康二三 奈良県桜井市大字阿部49番地1 株式会社 理研計器奈良製作所内 Fターム(参考) 2F055 AA40 BB20 CC02 DD04 DD05 EE14 FF07 FF11 FF49 GG11 HH05 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Toshiyama Toshiyama 1-1-1, Nojihigashi, Kusatsu-shi, Shiga Ritsumeikan University Biwako-Kusatsu Campus Science and Engineering Department (72) Inventor Koji Ota Sakurai-shi, Nara Prefecture 49-1 Abe 1 RIKEN Keiki Nara Works F term (reference) 2F055 AA40 BB20 CC02 DD04 DD05 EE14 FF07 FF11 FF49 GG11 HH05
Claims (6)
定深さの溝を設けて上記基台との間に隙間を形成するこ
とにより上記センサ基板の溝を設けた部位をダイヤフラ
ム部とするとともに、このダイヤフラム部の表面部に半
導体ピエゾ抵抗素子を設けた半導体圧力センサにおい
て、 上記ダイヤフラム部を含むセンサ基板の表面にこのセン
サ基板表面と略直交する方向へ延びる力伝達ロッドの平
坦な一端部を接合し、この力伝達ロッドの他端部を受圧
部としたことを特徴とする半導体圧力センサ。1. A groove having a predetermined depth is provided on a back surface of a sensor substrate provided on a base to form a gap between the sensor substrate and the sensor substrate. And a semiconductor pressure sensor having a semiconductor piezoresistive element provided on the surface of the diaphragm, wherein a force transmitting rod extending in a direction substantially orthogonal to the surface of the sensor substrate is provided on the surface of the sensor substrate including the diaphragm. A semiconductor pressure sensor wherein one end is joined and the other end of the force transmission rod is used as a pressure receiving portion.
形成されていることを特徴とする請求項1記載の半導体
圧力センサ。2. The semiconductor pressure sensor according to claim 1, wherein the other end of said force transmission rod is formed in a substantially hemispherical shape.
ング率の小さい材料からなり、この力伝達ロッドの幅寸
法が上記ダイヤフラム部の幅寸法以上であり、上記力伝
達ロッドの長さ寸法が力伝達ロッドの幅寸法以上である
ことを特徴とする請求項1または2記載の半導体圧力セ
ンサ。3. The force transmission rod is made of a material having a Young's modulus smaller than that of the sensor substrate, the width of the force transmission rod is equal to or greater than the width of the diaphragm, and the length of the force transmission rod is a force. 3. The semiconductor pressure sensor according to claim 1, wherein the width of the transmission rod is equal to or larger than the width of the transmission rod.
Pa以上であるとともに上記力伝達ロッドのヤング率が
略20乃至80GPaの範囲であり、この力伝達ロッド
の幅寸法が上記ダイヤフラム部の幅寸法の1.2倍以上
であり、上記力伝達ロッドの長さ寸法が力伝達ロッドの
幅寸法の1.0倍以上であることを特徴とする請求項3
記載の半導体圧力センサ。4. The sensor substrate has a Young's modulus of about 130 G.
Pa or more and the Young's modulus of the force transmission rod is in the range of approximately 20 to 80 GPa, the width of the force transmission rod is 1.2 times or more the width of the diaphragm, and The length dimension is at least 1.0 times the width dimension of the force transmission rod.
A semiconductor pressure sensor according to claim 1.
センサ基板及び力伝達ロッドの外側を覆うケース部材を
設けるとともに、このケース部材の一端部に設けた受圧
ダイヤフラムの内面側を上記力伝達ロッドの他端部に当
接させ、受圧ダイヤフラムの外面側を被圧力検出媒体に
当接させたことを特徴とする請求項1乃至4のいずれか
記載の半導体圧力センサ。5. A base member, a sensor substrate including a semiconductor piezoresistive element, and a case member for covering the outside of a force transmission rod are provided, and an inner surface side of a pressure receiving diaphragm provided at one end of the case member is connected to the force transmission rod. The semiconductor pressure sensor according to any one of claims 1 to 4, wherein the pressure receiving diaphragm is brought into contact with the other end of the pressure receiving diaphragm, and the outer surface of the pressure receiving diaphragm is brought into contact with the pressure detection medium.
センサ基板及び力伝達ロッドは上記ケース部材により力
伝達ロッドの長さ方向へ移動自在に支持されていること
を特徴とする請求項5記載の半導体圧力センサ。6. The force transmitting rod according to claim 5, wherein the base, the sensor substrate including the semiconductor piezoresistive element, and the force transmitting rod are supported by the case member so as to be movable in the longitudinal direction of the force transmitting rod. Semiconductor pressure sensor.
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JP22579898A JP3355341B2 (en) | 1998-08-10 | 1998-08-10 | Semiconductor pressure sensor |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002310813A (en) * | 2001-04-10 | 2002-10-23 | Toyota Central Res & Dev Lab Inc | Load sensor element |
JP2005337924A (en) * | 2004-05-27 | 2005-12-08 | Tokyo Electron Ltd | Method for manufacturing pressure gauge, method for manufacturing gas treating apparatus, pressure gauge, and gas treating apparatus |
JP2007248371A (en) * | 2006-03-17 | 2007-09-27 | Toyota Central Res & Dev Lab Inc | Element for detecting force |
WO2020100384A1 (en) * | 2018-11-16 | 2020-05-22 | 株式会社ジャパンディスプレイ | Display device |
Citations (9)
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JPH0236575A (en) * | 1988-07-26 | 1990-02-06 | Toyota Central Res & Dev Lab Inc | Force conversion device |
JPH0236327A (en) * | 1988-07-26 | 1990-02-06 | Toyota Central Res & Dev Lab Inc | Semiconductor pressure transducer |
JPH04257272A (en) * | 1991-02-12 | 1992-09-11 | Nippondenso Co Ltd | Semiconductor strain sensor and manufacture thereof |
JPH06132543A (en) * | 1992-10-20 | 1994-05-13 | Ishizuka Glass Co Ltd | Transducer |
JPH0719981A (en) * | 1993-06-01 | 1995-01-20 | Nippondenso Co Ltd | High-temperature pressure sensor |
JPH07176766A (en) * | 1993-12-20 | 1995-07-14 | Ishizuka Glass Co Ltd | Orthogonal semiconductor pressure transducer |
JPH07253374A (en) * | 1994-03-14 | 1995-10-03 | Nippondenso Co Ltd | Pressure detection device |
JPH07253364A (en) * | 1994-03-14 | 1995-10-03 | Nippondenso Co Ltd | Stress detector |
JPH09126915A (en) * | 1995-10-27 | 1997-05-16 | Yokogawa Electric Corp | Semiconductor load detector |
-
1998
- 1998-08-10 JP JP22579898A patent/JP3355341B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0236575A (en) * | 1988-07-26 | 1990-02-06 | Toyota Central Res & Dev Lab Inc | Force conversion device |
JPH0236327A (en) * | 1988-07-26 | 1990-02-06 | Toyota Central Res & Dev Lab Inc | Semiconductor pressure transducer |
JPH04257272A (en) * | 1991-02-12 | 1992-09-11 | Nippondenso Co Ltd | Semiconductor strain sensor and manufacture thereof |
JPH06132543A (en) * | 1992-10-20 | 1994-05-13 | Ishizuka Glass Co Ltd | Transducer |
JPH0719981A (en) * | 1993-06-01 | 1995-01-20 | Nippondenso Co Ltd | High-temperature pressure sensor |
JPH07176766A (en) * | 1993-12-20 | 1995-07-14 | Ishizuka Glass Co Ltd | Orthogonal semiconductor pressure transducer |
JPH07253374A (en) * | 1994-03-14 | 1995-10-03 | Nippondenso Co Ltd | Pressure detection device |
JPH07253364A (en) * | 1994-03-14 | 1995-10-03 | Nippondenso Co Ltd | Stress detector |
JPH09126915A (en) * | 1995-10-27 | 1997-05-16 | Yokogawa Electric Corp | Semiconductor load detector |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002310813A (en) * | 2001-04-10 | 2002-10-23 | Toyota Central Res & Dev Lab Inc | Load sensor element |
JP2005337924A (en) * | 2004-05-27 | 2005-12-08 | Tokyo Electron Ltd | Method for manufacturing pressure gauge, method for manufacturing gas treating apparatus, pressure gauge, and gas treating apparatus |
JP4678752B2 (en) * | 2004-05-27 | 2011-04-27 | 東京エレクトロン株式会社 | Pressure gauge manufacturing method and gas processing apparatus manufacturing method |
JP2007248371A (en) * | 2006-03-17 | 2007-09-27 | Toyota Central Res & Dev Lab Inc | Element for detecting force |
WO2020100384A1 (en) * | 2018-11-16 | 2020-05-22 | 株式会社ジャパンディスプレイ | Display device |
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