JP2005337728A - Inspection device for foreign matter on surface of mask and inspection method using it - Google Patents

Inspection device for foreign matter on surface of mask and inspection method using it Download PDF

Info

Publication number
JP2005337728A
JP2005337728A JP2004152978A JP2004152978A JP2005337728A JP 2005337728 A JP2005337728 A JP 2005337728A JP 2004152978 A JP2004152978 A JP 2004152978A JP 2004152978 A JP2004152978 A JP 2004152978A JP 2005337728 A JP2005337728 A JP 2005337728A
Authority
JP
Japan
Prior art keywords
mask
foreign matter
foreign
inspection
coordinate position
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004152978A
Other languages
Japanese (ja)
Inventor
Koujirou Itou
考治郎 伊藤
Takashi Susa
多加志 須佐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP2004152978A priority Critical patent/JP2005337728A/en
Publication of JP2005337728A publication Critical patent/JP2005337728A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inspection device for the foreign matter on the surface of a mask capable of easily inspecting only the foreign matter bonded to the surface of the mask for electron beam exposure. <P>SOLUTION: The inspection device for the foreign matter on the surface of the mask is constituted of a mask stage 10 for placing the mask 11 to move and rotate the same, a laser irradiation unit 20 for irradiating the surface of the mask 11 with a laser beam, a detection part 30 for detecting the scattered beam from the foreign matter and a judging/control unit 40 for taking in the signal from the detection part 30 not only to perform the judgment as the foreign matter but also to detect the coordinate position of the foreign matter and governing the control of the whole of the inspection device. The presence of the foreign matter on the surface of the mask 11 and the coordinate position of the foreign matter can be easily detected by irradiating the surface of the mask 11 with the laser beam. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体製造において使用される電子線露光用マスク表面の異物検査装置及びマスク表面の異物検査方法に関わるものである。   The present invention relates to a foreign matter inspection apparatus and a foreign matter inspection method for a mask surface for electron beam exposure used in semiconductor manufacturing.

電子線露光装置用のマスク上には、電子線が通過して電子線描画が可能なよう数10〜数100nmの各種の微小なパターン、もしくはホールが多数形成されおり、半導体製造においては電子線露光装置用のマスクを用いて、ウエーハ上に等倍、もしくは縮小投影露光される。このような微小なパターンを有する電子線露光用マスクの製作過程においては、表面検査を逐次行い管理することで最終的には異物付着を皆無に近づける必要がある。   On the mask for the electron beam exposure apparatus, a large number of various fine patterns of several tens to several hundreds of nanometers or holes are formed so that the electron beam can pass and the electron beam can be drawn. Using a mask for an exposure apparatus, the wafer is exposed at the same magnification or reduced projection on the wafer. In the manufacturing process of the electron beam exposure mask having such a minute pattern, it is necessary to finally bring the adhesion of foreign matters close to zero by sequentially performing and managing the surface inspection.

従来の半導体用マスクにおいては、製造中に付着した微小異物は、電子線露光時のパターン欠けなどの転写不良原因とされ、また、転写不良とはならない異物であってもマスク上に付着していれば、露光機内あるいはウエーハ上への落下物となるため、製造工程では異物付着がないよう厳重な管理が行われている。   In conventional semiconductor masks, minute foreign matter adhered during manufacture is a cause of transfer failure such as pattern chipping during electron beam exposure, and even foreign matter that does not cause transfer failure adheres to the mask. Then, since it becomes a fallen object in the exposure machine or on the wafer, strict management is performed in the manufacturing process so that no foreign matter adheres.

半導体マスクの中でも、フォトマスクと呼ばれる光透過型のマスクにおいては、製造工程の最終段の洗浄後にペリクルと呼ばれる薄い膜でマスク表面を覆ってしまい、異物がペリクル内に侵入しないような工夫が施されている。この方法によれば、たとえ異物がペリクルに付着していても、マスクの直接の表面上ではないため露光パターンにはほとんど影響することはない。   Among semiconductor masks, a light-transmitting mask called a photomask is designed to prevent foreign matter from entering the pellicle by covering the mask surface with a thin film called a pellicle after cleaning at the final stage of the manufacturing process. Has been. According to this method, even if foreign matter adheres to the pellicle, the exposure pattern is hardly affected because it is not on the direct surface of the mask.

しかし、電子線露光用のマスクにおいては、ペリクルのような薄膜は電子線の通過を遮ってしまい使用することができないため、マスク表面に異物が付着する恐れが常にある。そのため、付着異物を各工程で管理し、状況を把握するために、異物検査装置が用いられる。電子線露光装置用マスクの製作工程においても、パターン形成前の異物検査であれば、ベアウエーハ用の異物検査装置を用いて検査が行われている。   However, in a mask for electron beam exposure, a thin film such as a pellicle blocks the passage of the electron beam and cannot be used. Therefore, there is always a possibility that foreign matter adheres to the mask surface. Therefore, a foreign matter inspection apparatus is used to manage the attached foreign matter in each process and grasp the situation. Even in the manufacturing process of a mask for an electron beam exposure apparatus, if a foreign matter inspection is performed before pattern formation, the inspection is performed using a bare wafer foreign matter inspection device.

従来の異物検査の方式としては、レーザを使用して異物散乱光を検出する方式が提案されている(例えば、特許文献1参照。)。しかし、電子線露光用マスクにおいては、パターンが微細であるため異物とパターンの区別が困難であるという問題を有している。
この場合、異物検出の原理としてはパターンからの反射光を、偏光原理を用いてカットし、異物散乱光のみを検出する方法などが用いられているが、異物形状は様々であるため、完全に異物だけを検出することは困難な状況にある。
特開平05−2262号公報
As a conventional foreign matter inspection method, a method of detecting foreign matter scattered light using a laser has been proposed (see, for example, Patent Document 1). However, the electron beam exposure mask has a problem that it is difficult to distinguish the foreign material from the pattern because the pattern is fine.
In this case, the foreign matter detection principle is such that the reflected light from the pattern is cut using the polarization principle and only the foreign matter scattered light is detected. It is difficult to detect only foreign objects.
JP 05-2262 A

本発明は、上記問題点に鑑みなされたもので、電子線露光用マスクの表面に付着した異物だけを容易に検査可能なマスク表面の異物検査装置及び検査方法を提供することを目的とする。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a foreign matter inspection apparatus and inspection method for a mask surface that can easily inspect only foreign matters attached to the surface of an electron beam exposure mask.

本発明に於いて上記課題を達成するために、まず請求項1においては、少なくともマスクを載置し、移動、回転可能なマスクステージ10と、マスク表面にレーザ光を照射するレーザ照射ユニット20と、異物からの散乱光を検出する検出部30と、検出器からの信
号を取り込み、異物としての判定と異物の座標位置を検出し、検査装置全体の制御を司る判定・制御ユニット40とからなることを特徴とするマスク表面の異物検査装置としたものである。
In order to achieve the above object in the present invention, first, in claim 1, a mask stage 10 on which at least a mask is mounted, which can be moved and rotated, and a laser irradiation unit 20 that irradiates the mask surface with laser light; The detection unit 30 detects scattered light from a foreign object, and includes a determination / control unit 40 that takes in a signal from the detector, detects a foreign object and detects the coordinate position of the foreign object, and controls the entire inspection apparatus. This is a mask surface foreign matter inspection apparatus characterized by the above.

また、請求項2においては、前記マスクステージ10に載置されたマスク面に対し平行にレーザ光を照射し、マスク表面の異物からの散乱光を検出して異物の有無と異物の座標位置を検出することを特徴とするマスク表面の異物検査方法としたものである。   According to a second aspect of the present invention, the laser beam is irradiated in parallel to the mask surface placed on the mask stage 10 to detect the scattered light from the foreign matter on the mask surface, thereby determining the presence or absence of the foreign matter and the coordinate position of the foreign matter. This is a method for inspecting a foreign substance on a mask surface characterized by detecting.

本発明のマスク表面の異物検査装置及び検査方法を用いて電子線露光用のマスク表面の異物検査を行うことにより、従来困難であったEBマスクのパターン付き異物の検査が可能となり、マスク表面の異物検査の検査精度は大幅に向上し、EBマスクの品質向上に寄与できる。   By performing the foreign matter inspection on the mask surface for electron beam exposure using the foreign matter inspection apparatus and inspection method of the mask surface of the present invention, it becomes possible to inspect the foreign matter with a pattern of the EB mask, which has been difficult in the past, and Inspection accuracy of foreign matter inspection is greatly improved, which can contribute to improvement of the quality of the EB mask.

以下、本発明の実施の形態につき説明する。
請求項1に係る本発明のマスク表面の異物検査装置は、図1に示すように、マスク11を載置し、マスクを移動、回転可能なマスクステージ10と、マスク11表面にレーザ光を照射するレーザ照射ユニット20と、異物からの散乱光を検出する検出部30と、検出部からの信号を取り込み、異物としての判定と異物の座標位置を検出し、検査装置全体の制御を司る判定・制御ユニット40とから構成されおり、マスク11表面に略平行にレーザ光を照射することにより、マスク11表面の異物の有無と異物の座標位置を容易に検出できるようにしたものである。
Hereinafter, embodiments of the present invention will be described.
As shown in FIG. 1, the apparatus for inspecting foreign matter on a mask surface according to a first aspect of the present invention mounts a mask 11, moves and rotates the mask, and irradiates the surface of the mask 11 with laser light. A laser irradiation unit 20 that performs detection, a detection unit 30 that detects scattered light from a foreign object, and a signal from the detection unit, and determines the determination as a foreign object and the coordinate position of the foreign object. The control unit 40 is configured to irradiate the surface of the mask 11 with laser light substantially in parallel so that the presence or absence of foreign matter on the surface of the mask 11 and the coordinate position of the foreign matter can be easily detected.

マスクステージ10はX、Y移動、回転機構を有するステージで、移動距離及び回転角度を正確に移動、回転できるコントローラー12を有し、判定・制御ユニット40でプログラム制御される。
レーザ照射ユニット20は、載置台21上に設置されており、コントローラー22にてレーザ照射ユニット20の上下位置、回転が制御される。
検出部30は、ホトマル、固体撮像素子等の検出器31と光学系32とからなり、マスク11の検出エリアは光学系32で調整される。
判定・制御ユニット40は、検出部からの信号を取り込み、異物としての判定と異物の座標位置を検出し、検査装置全体の制御を行っている。
The mask stage 10 is a stage having X, Y movement and rotation mechanisms, has a controller 12 that can accurately move and rotate the movement distance and rotation angle, and is program-controlled by the determination / control unit 40.
The laser irradiation unit 20 is installed on the mounting table 21, and the controller 22 controls the vertical position and rotation of the laser irradiation unit 20.
The detection unit 30 includes a detector 31 such as a photomultiplier or a solid-state imaging device and an optical system 32, and the detection area of the mask 11 is adjusted by the optical system 32.
The determination / control unit 40 takes in a signal from the detection unit, detects the determination as a foreign object and the coordinate position of the foreign object, and controls the entire inspection apparatus.

以下、請求項2に係る本発明のマスク表面の異物検査方法について説明する。
まず、マスクステージ10上に検査用のマスク11を載置し、載置台21上にレーザ照射ユニット20を設置し、レーザ照射ユニット20からレーザー光23がマスク11表面に沿って平行に照射されるように載置台21の上下移動、回転を行ってレーザー光23の光軸を合わせる(図2(a)及び(b)参照)。
ここで、載置台21の位置制御は、コントローラー22にて行われる。
Hereinafter, the foreign matter inspection method for a mask surface according to the second aspect of the present invention will be described.
First, the inspection mask 11 is placed on the mask stage 10, the laser irradiation unit 20 is installed on the mounting table 21, and the laser beam 23 is irradiated in parallel along the surface of the mask 11 from the laser irradiation unit 20. Thus, the mounting table 21 is moved up and down and rotated to align the optical axis of the laser beam 23 (see FIGS. 2A and 2B).
Here, the position control of the mounting table 21 is performed by the controller 22.

次に、レーザ光23を十分にコリメートするよう調整し、マスク11の座標位置をマスクステージ10で再現するためのマスク11の座標原点(図3ではマスク11端部の左下)を設定する(図3参照)。
ここで、マスクステージ10はX、Y移動と回転機構を有しており、座標位置を表示できる測長機能を有するステージである。さらに、マスク11の位置関係が判別し易いようにアライメントマークを入れておくと良い。ここでは、上下左右にマークを入れ、マスクの位置関係が確認できるようにする。
Next, the laser beam 23 is adjusted so as to be sufficiently collimated, and the coordinate origin of the mask 11 for reproducing the coordinate position of the mask 11 on the mask stage 10 (lower left of the end of the mask 11 in FIG. 3) is set (FIG. 3). 3).
Here, the mask stage 10 has an X and Y movement and rotation mechanism, and is a stage having a length measuring function capable of displaying a coordinate position. Furthermore, it is preferable to put an alignment mark so that the positional relationship of the mask 11 can be easily determined. Here, marks are placed on the top, bottom, left, and right so that the positional relationship of the mask can be confirmed.

次に、マスクステージ10を所定のピッチでマスク11の下端から上端まで移動し、レ
ーザ光23をマスク11の下端から上端まで走査する。図4(a)は、マスクステージ10の移動位置がマスク11の上端まで移動して停止した状態を示す。図4(b)は、横軸にレーザー光23の移動位置、縦軸に検出器の信号強度をとった場合の異物a、異物b、異物cからの散乱光の検出部30での検出波形の一例を示す。マスクステージ10の移動ピッチはレーザビーム径よりも小さい値に設定してある。ここでは、マスクステージ10を移動してレーザ光23を走査したが、レーザ照射ユニット20を移動して、レーザ光23を走査しても良い。
Next, the mask stage 10 is moved from the lower end to the upper end of the mask 11 at a predetermined pitch, and the laser beam 23 is scanned from the lower end to the upper end of the mask 11. FIG. 4A shows a state where the movement position of the mask stage 10 has moved to the upper end of the mask 11 and stopped. FIG. 4B shows a detection waveform of the scattered light from the foreign matter a, foreign matter b, and foreign matter c when the horizontal axis represents the moving position of the laser beam 23 and the vertical axis represents the signal intensity of the detector. An example is shown. The moving pitch of the mask stage 10 is set to a value smaller than the laser beam diameter. Here, the mask stage 10 is moved and the laser beam 23 is scanned, but the laser irradiation unit 20 may be moved and the laser beam 23 may be scanned.

ここで、マスク11の表面に異物a、異物b、異物cがあった場合、まず、異物aにレーザ光23が照射されると異物aより散乱光が放射され検出部30にて信号強度I1として取り込まれ、その時の座標位置y1がマスクステージ10より判定・制御ユニット40にて検出され、メモリーに保存される。同様に、異物b、異物cについても、信号強度I2、座標位置y2及び信号強度I3、座標位置y3が検出部30及び判定・制御ユニット40に取り込まれ、順次メモリーに保存され、異物a、異物b、異物cは判定・制御ユニット40にてマスク11表面の異物として判定される。
また、判定・制御ユニット40では、マスク品種毎の検査データの履歴を記録、保管し、任意に過去のマスク表面の異物検査結果及び異物の座標位置データ等を読み出すことができるデータベース機能を有している。これにより、異物で有るかどうかの限界値を品種毎に詳細に設定できる。
さらに、レーザ光23の走査時のマスク11表面は、異物が存在しない状態ではレーザ光は反射することはない。
Here, when there are foreign matter a, foreign matter b, and foreign matter c on the surface of the mask 11, first, when the foreign matter a is irradiated with the laser beam 23, scattered light is emitted from the foreign matter a, and the signal intensity I is detected by the detection unit 30. 1 , the coordinate position y 1 at that time is detected by the determination / control unit 40 from the mask stage 10 and stored in the memory. Similarly, for the foreign matter b and the foreign matter c, the signal intensity I 2 , the coordinate position y 2, the signal intensity I 3 , and the coordinate position y 3 are taken into the detection unit 30 and the determination / control unit 40 and sequentially stored in the memory. Foreign matter a, foreign matter b, and foreign matter c are determined by the determination / control unit 40 as foreign matter on the surface of the mask 11.
The determination / control unit 40 has a database function that records and stores a history of inspection data for each mask type, and can arbitrarily read past inspection results of foreign matter on the mask surface, foreign matter coordinate position data, and the like. ing. Thereby, the limit value of whether or not it is a foreign object can be set in detail for each product type.
Further, the laser beam is not reflected on the surface of the mask 11 when the laser beam 23 is scanned in a state where no foreign matter is present.

マスク11表面の異物a、異物b、異物cと、y軸の座標位置については判明したが、異物a、異物b、異物cのX軸の座標位置についての検出方法について説明する。
まず、マスク11をマスクステージ10に載置した状態で、マスクステージ10を初期位置に移動し、マスクステージ10を90°回転させ、マスクステージ10の移動方向がX軸になるようにする。マスクステージ10を90°回転した状態のマスク11表面の異物a、異物b、異物cの配置状態を図5に示す。
Although the foreign matter a, foreign matter b, foreign matter c on the surface of the mask 11 and the coordinate position of the y-axis have been found, a method of detecting the X-axis coordinate position of the foreign matter a, foreign matter b, and foreign matter c will be described.
First, with the mask 11 placed on the mask stage 10, the mask stage 10 is moved to the initial position, the mask stage 10 is rotated by 90 °, and the moving direction of the mask stage 10 is set to the X axis. FIG. 5 shows an arrangement state of the foreign matter a, foreign matter b, and foreign matter c on the surface of the mask 11 in a state where the mask stage 10 is rotated by 90 °.

再度マスク11の座標位置をマスクステージ10で再現するためのマスク11の座標原点(図5ではマスク11端部の左下)を設定する(図5参照)。   The coordinate origin of the mask 11 for reproducing the coordinate position of the mask 11 again on the mask stage 10 (in FIG. 5, the lower left of the end of the mask 11) is set (see FIG. 5).

次に、マスクステージ10を所定のピッチでマスク11の下端(ここでは右マーク)から上端(ここでは左マーク)まで移動し、レーザ光23をマスク11の下端から上端まで走査する。図6(a)は、マスクステージ10の移動位置がマスク11の上端(右マーク)まで移動して停止した状態を示す。図6(b)は、横軸にレーザー光23の移動位置、縦軸に検出器の信号強度をとった場合の異物b、異物a、異物cからの散乱光の検出部30での検出波形の一例を示す。マスクステージ10の移動ピッチはレーザビーム径よりも小さい値に設定してある。
ここで、上記マスク11の表面の異物検査で、マスク11の表面の異物a、異物b、異物cと、y軸の座標位置については判明しているので、ここでは、異物a、異物b、異物cのx軸の座標位置の検出を行う。
Next, the mask stage 10 is moved from the lower end (here, the right mark) to the upper end (here, the left mark) of the mask 11 at a predetermined pitch, and the laser beam 23 is scanned from the lower end to the upper end of the mask 11. FIG. 6A shows a state where the movement position of the mask stage 10 has moved to the upper end (right mark) of the mask 11 and stopped. FIG. 6B shows a detection waveform of the scattered light from the foreign matter b, foreign matter a, and foreign matter c when the horizontal axis represents the moving position of the laser beam 23 and the vertical axis represents the detector signal intensity. An example is shown. The moving pitch of the mask stage 10 is set to a value smaller than the laser beam diameter.
Here, since the foreign matter inspection on the surface of the mask 11 has revealed the foreign matter a, foreign matter b, foreign matter c on the surface of the mask 11 and the coordinate position of the y axis, the foreign matter a, foreign matter b, The x-axis coordinate position of the foreign object c is detected.

まず、異物bにレーザ光23が照射されると異物bより散乱光が放射され検出部30にて検出された信号強度I2は、判定・制御ユニット40にて事前に検査された異物bであることが確認され、その時の座標位置x1がマスクステージ10より判定・制御ユニット40にて取り込まれ、異物bに座標位置x1が追加、保存される。ここで、異物bの信号強度I2と、座標位置y2及びx1が確定する。同様に、異物a、異物cについても、座標位置x2及び座標位置x3が判定・制御ユニット40に取り込まれ、順次メモリーに保存される。ここで、異物aの信号強度I1と、座標位置y1及びx2と、異物cの信号強度I3
、座標位置y3及びx3とが確定され、異物a、異物b、異物cの有無の再確認と、x、yの座標位置が検出される。
First, when the foreign matter b is irradiated with the laser beam 23, the scattered light is emitted from the foreign matter b and the signal intensity I 2 detected by the detection unit 30 is the foreign matter b inspected in advance by the determination / control unit 40. It is confirmed that the coordinate position x 1 at that time is taken in by the determination / control unit 40 from the mask stage 10, and the coordinate position x 1 is added and stored in the foreign object b. Here, the signal intensity I 2 of the foreign object b and the coordinate positions y 2 and x 1 are determined. Similarly, for the foreign object a and the foreign object c, the coordinate position x 2 and the coordinate position x 3 are taken into the determination / control unit 40 and sequentially stored in the memory. Here, the signal intensity I 1 of the foreign object a, the coordinate positions y 1 and x 2 , the signal intensity I 3 of the foreign object c, and the coordinate positions y 3 and x 3 are determined, and the foreign object a, the foreign object b, and the foreign object c are determined. Reconfirmation of the presence or absence of x and y coordinate positions are detected.

また、検出部30の変わりに、観察用の顕微鏡をセットし、顕微鏡の光学軸とマスク11の座標原点を合わせることにより、観察用の顕微鏡で上記検査装置で検査された異物a、異物b、異物cの確認作業をマスクステージ10を使って自動的に行うことができる。   Further, instead of the detection unit 30, an observation microscope is set, and by aligning the optical axis of the microscope with the coordinate origin of the mask 11, the foreign matter a, foreign matter b, The confirmation operation of the foreign matter c can be automatically performed using the mask stage 10.

上記マスクの異物検査の検査順序等は予め品種毎に判定・制御ユニット40にプログラム化されており、その都度品種を指定することにより、マスクの位置、回転制御、レーザ照射ユニットの位置制御を行って、一連の検査ができるようになっている。
さらに、マスク収納カセット、搬送ユニット等を設けることにより、マスク収納カセットからのマスク11のマスクステージ10への載置、異物検査、異物の座標位置の検出、確認作業、マスク11の収納までの一連の作業を自動化することもできる。
The inspection order for foreign matter inspection of the mask is programmed in advance in the determination / control unit 40 for each product type, and the mask position, rotation control, and laser irradiation unit position control are performed by designating the product type each time. Thus, a series of inspections can be performed.
Furthermore, by providing a mask storage cassette, a transport unit, etc., a series of steps from placing the mask 11 on the mask stage 10 from the mask storage cassette, inspection of foreign matter, detection of the coordinate position of foreign matter, confirmation work, and storage of the mask 11 are performed. Can also be automated.

本発明のマスク表面の異物検査装置の一実施例を示す模式構成図である。It is a schematic block diagram which shows one Example of the foreign material inspection apparatus of the mask surface of this invention. (a)は、マスクステージに載置されたマスクにレーザー照射ユニットよりレーザー光を照射している状態を示す模式平面図である。(b)は、マスクステージに載置されたマスクにレーザー照射ユニットよりレーザー光を照射している状態を示す模式側面図である。(A) is a schematic top view which shows the state which has irradiated the laser beam from the laser irradiation unit to the mask mounted in the mask stage. (B) is a schematic side view which shows the state which has irradiated the laser beam from the laser irradiation unit to the mask mounted in the mask stage. レーザ光の位置調整及びマスクの座標原点設定が終了し、検査開始ができる状態を示す説明図である。It is explanatory drawing which shows the state which the position adjustment of a laser beam and the coordinate origin setting of a mask are complete | finished, and inspection can be started. (a)は、マスクをレーザ光走査した状態を示す説明図である。(b)は、異物a、異物b、異物cからの散乱光の検出部での検出波形の一例を示す説明図である。(A) is explanatory drawing which shows the state which scanned the mask with the laser beam. (B) is explanatory drawing which shows an example of the detection waveform in the detection part of the scattered light from the foreign material a, the foreign material b, and the foreign material c. レーザ光の位置調整及びマスクの座標原点設定が終了し、検査開始ができる状態を示す説明図である。It is explanatory drawing which shows the state which the position adjustment of a laser beam and the coordinate origin setting of a mask are complete | finished, and inspection can be started. (a)は、マスクをレーザ光走査した状態を示す説明図である。(b)は、異物a、異物b、異物cからの散乱光の検出部での検出波形の一例を示す説明図である。(A) is explanatory drawing which shows the state which scanned the mask with the laser beam. (B) is explanatory drawing which shows an example of the detection waveform in the detection part of the scattered light from the foreign material a, the foreign material b, and the foreign material c.

符号の説明Explanation of symbols

10……マスクステージ
11……マスク
12……コントローラ
20……レーザ照射ユニット
21……載置台
22……コントローラ
23……レーザ光
30……検出部
31……検出器
32……光学系
40……判定・制御ユニット
100……検査装置
a、b、c……異物
1、I2、I3……異物の検出部での信号強度
1、x2、x3……異物のx軸での座標位置
1、y2、y3……異物のy軸での座標位置
DESCRIPTION OF SYMBOLS 10 ... Mask stage 11 ... Mask 12 ... Controller 20 ... Laser irradiation unit 21 ... Mounting stage 22 ... Controller 23 ... Laser beam 30 ... Detection part 31 ... Detector 32 ... Optical system 40 ... ... Judgment / control unit 100 ... Inspection devices a, b, c ... Foreign matter I 1 , I 2 , I 3 ... Signal intensity x 1 , x 2 , x 3 at foreign matter detection unit x-axis of foreign matter Coordinate position y 1 , y 2 , y 3 ...... Coordinate position of foreign matter on y-axis

Claims (2)

少なくともマスクを載置し、移動、回転可能なマスクステージ(10)と、マスク表面にレーザ光を照射するレーザ照射ユニット(20)と、異物からの散乱光を検出する検出部(30)と、検出部からの信号を取り込み、異物としての判定と異物の座標位置を検出し、検査装置全体の制御を司る判定・制御ユニット(40)とからなることを特徴とするマスク表面の異物検査装置。   A mask stage (10) on which at least a mask is mounted, movable and rotatable, a laser irradiation unit (20) for irradiating the mask surface with laser light, and a detection unit (30) for detecting scattered light from a foreign substance, A mask surface foreign matter inspection apparatus comprising: a determination / control unit (40) which takes in a signal from a detection unit, detects a foreign matter, detects a coordinate position of the foreign matter, and controls the entire inspection apparatus. 前記マスクステージ(10)に載置されたマスク面に対し平行にレーザ光を照射し、マスク表面の異物からの散乱光を検出して異物の有無と異物の座標位置を検出することを特徴とするマスク表面の異物検査方法。   A laser beam is irradiated in parallel to the mask surface placed on the mask stage (10), and scattered light from foreign matter on the mask surface is detected to detect the presence or absence of foreign matter and the coordinate position of the foreign matter. A foreign matter inspection method for the mask surface.
JP2004152978A 2004-05-24 2004-05-24 Inspection device for foreign matter on surface of mask and inspection method using it Pending JP2005337728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004152978A JP2005337728A (en) 2004-05-24 2004-05-24 Inspection device for foreign matter on surface of mask and inspection method using it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004152978A JP2005337728A (en) 2004-05-24 2004-05-24 Inspection device for foreign matter on surface of mask and inspection method using it

Publications (1)

Publication Number Publication Date
JP2005337728A true JP2005337728A (en) 2005-12-08

Family

ID=35491484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004152978A Pending JP2005337728A (en) 2004-05-24 2004-05-24 Inspection device for foreign matter on surface of mask and inspection method using it

Country Status (1)

Country Link
JP (1) JP2005337728A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014021120A (en) * 2012-07-19 2014-02-03 Samsung Electro-Mechanics Co Ltd Surface foreign matter inspection system and control method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014021120A (en) * 2012-07-19 2014-02-03 Samsung Electro-Mechanics Co Ltd Surface foreign matter inspection system and control method thereof

Similar Documents

Publication Publication Date Title
US9804103B2 (en) Inspection method, template substrate, and focus offset method
KR101149842B1 (en) Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process
TW201723646A (en) Defect inspecting method, sorting method and producing method for photomask blank
JP5192795B2 (en) Electron beam measuring device
JPH061370B2 (en) Mask defect inspection system
JP7007993B2 (en) Dicing tip inspection device
US4365163A (en) Pattern inspection tool - method and apparatus
TWI579558B (en) Inspection method and inspection device
KR20050009137A (en) Method for defect segmentation in features on semiconductor substrates
JP2005337728A (en) Inspection device for foreign matter on surface of mask and inspection method using it
US7035449B2 (en) Method for applying a defect finder mark to a backend photomask making process
JP2009291813A (en) Laser beam machining apparatus
US10504219B2 (en) Inspection apparatus and inspection method
JP3056823B2 (en) Defect inspection equipment
US7314689B2 (en) System and method for processing masks with oblique features
JP2002006479A (en) Method for inspecting mask and apparatus therefor
JPH01248616A (en) Surface defect inspecting device
TW202303127A (en) Defect inspection device, defect inspection method, and method for manufacturing photomask blank
JP2616732B2 (en) Reticle inspection method
TW202339073A (en) Treatment method of workpiece
JP2622714B2 (en) Pattern inspection equipment
JPS59103336A (en) Apparatus for mask inspection and correction thereof
CN113109350A (en) Detection method, system, device and computer readable storage medium
JP2001141416A (en) Inspection device for foreign matter on wafer
KR20090070367A (en) Wafer inspection system for semiconductor manufacturing