JP2005336575A - Plasma film deposition system for hollow vessel - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma film deposition system for a hollow vessel where a matching unit for matching impedance in a plasma CVD (Chemical Vapor Deposition) system using a metallic vessel for sealing microwave energy is miniaturized, and further, impedance matching operation at the time of changing a production line can be simplified as well. <P>SOLUTION: The plasma film deposition system for a hollow vessel is provided with a means where a hollow vessel is held to a metallic vessel, and the metallic vessel is made into a vacuum; and a means where plasma is generated inside the metallic vessel, and a matching unit for matching impedance via a rectangular wave guide between the microwave oscillator for generating plasma and the metallic vessel is a wave guide opening area control type matching unit. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a plasma enhanced chemical vapor deposition (PECVD) method used for forming a thin film on the surface of a hollow body container, such as a plastic bottle or plastic cup or plastic tray, a paper container, a paper cup, or other hollow plastic molded article. It is related with the plasma film-forming apparatus for hollow body containers suitable as an apparatus using this.

  In recent years, it has been desired to form a thin film on the surface of a hollow container such as a plastic container to improve gas barrier properties such as oxygen permeability and water vapor permeability of the hollow container or wettability of the surface. .

  Further, in order to provide gas barrier properties to the hollow container, a thin film is formed on the surface of the hollow container, for example, a high vacuum is generated using plasma generated by exciting electromagnetic waves as shown in FIG. A method and apparatus 100 for supplying a hollow body container 101 such as a bottle or a flask into the chamber 102 and forming a coating of an amorphous carbon material on the supplied hollow body container 101 (for example, see Patent Document 1) is known. It has been.

  As described above, FIG. 7 shows an apparatus for plasma enhanced chemical vapor deposition (PECVD), which is one of the methods for decomposing a source gas in plasma and stacking the decomposed species on the surface of the hollow body container to form a film. A microwave oscillator 115 for generating plasma, a rectangular waveguide 116, a metal container 111 to which an EH tuner type matching unit 117 and a hollow body container 112 for film formation are supplied, and an introduction tube for injecting a source gas are shown. A plasma film-forming apparatus 200 composed of 118, etc. is also known.

  Further, when forming a thin film on the surface of the hollow body container 112 by the plasma film forming apparatus 200, the hollow body container 112 or the like for forming a film is supplied into the metal container 111 and formed on the upper part of the metal container 111. After the lid 110 is sealed, the inside of the metal container 111 is vacuum-sucked to maintain a constant reduced pressure state. Further, after the source gas is injected from the source gas introduction rod 118, the microwave generator 115 generates plasma. The microwave power is introduced into the metal container 111 through the rectangular waveguide 116, and plasma is generated inside the hollow container 112 by the microwave energy.

  Further, in addition to the plasma film forming apparatus 200 shown in FIG. 7, for example, a plasma film forming apparatus 300 shown in FIG. 8 is often used and known. A plasma film forming apparatus 300 shown in FIG. 8 includes a microwave oscillator 125 for generating plasma, a rectangular waveguide 126, an EH tuner matching device 127, a metal container 121, and quartz glass or the like in the metal container 121. A vacuum chamber 123 to which a hollow body container 122 for film formation is supplied, a source gas introduction pipe 128 for injecting source gas, and the like are formed.

  Further, the thin film on the surface of the hollow body container 122 is formed by sealing the lid 120 formed on the upper part of the metal container 121 after supplying the hollow body container 122 to be formed into the vacuum chamber 123, and vacuum chamber 123. The inside of the chamber is evacuated to maintain a constant reduced pressure state, and further, after the source gas is injected from the source gas introduction rod 128, the microwave power is passed through the rectangular waveguide 126 by the microwave oscillator 125 to generate plasma. Then, it is introduced into the metal container 121 and is generated by generating plasma inside the hollow container 122 by microwave energy.

  The microwave energy for generating plasma is impedance-matched by an EH tuner type matching device 127 formed between the metal container 121 and the microwave oscillator 125. Further, since the impedance of the metal container 121 (load side) varies depending on the input power, the type of gas, the gas flow rate, the pressure, the plasma generation conditions of the hollow body container 121, etc., the microwave oscillator 125 (oscillation) The E-H tuner type matching device 127 adjusts the impedance matching with the device side.

  Further, when the matching state is poor, all the microwaves from the microwave oscillator 125 cannot be input to the metal container 121 (load side), and the microwave power in the metal container 121 is insufficient, and the plasma Does not occur or sufficient plasma energy cannot be obtained. In addition, when the matching state deteriorates, some microwaves return to the microwave oscillator 125 (oscillator side) again as reflected waves, and the microwave oscillator 125 does not have a protection function by the reflected waves. In some cases, the internal oscillation element may be destroyed.

  Further, as shown in FIG. 9, the structure of the E-H tuner type matching device for obtaining the impedance matching has a rectangular waveguide 136 at an appropriate position on the substantially central upper surface in the long side direction of the rectangular waveguide 136. A branching waveguide (E-plane waveguide) 131 having the same size as the short side (width) and having an appropriate length is formed perpendicular to the upper surface of the rectangular waveguide 136.

  In addition, a metal plate 134 that is in electrical contact with the inner surface of the branch waveguide (E surface waveguide) 131 is formed inside the branch waveguide (E surface waveguide) 131. Is formed outside the branching waveguide (E-plane waveguide) 131 and has a structure in which the position of the metal plate 134 is adjusted by the operation of the shaft 133 connected to the metal plate 134.

  Further, a branched waveguide having the same size and the same length as the side surface 135 of the rectangular waveguide 136 is also disposed at an appropriate position on the substantially central side surface in the long side direction of the rectangular waveguide 136. (H-plane waveguide) 132 is horizontally formed on the side surface 135 of the rectangular waveguide 136.

  Further, a metal plate 134 that is in electrical contact with the inner surface of the branch waveguide (H-plane waveguide) 132 is formed in the branch waveguide (H-plane waveguide) 132. Is formed outside the branching waveguide (H-plane waveguide) 132 and has a structure in which the position of the metal plate 134 is adjusted by the operation of the shaft 133 connected to the metal plate 134.

  Each of the branch waveguides (H-plane waveguide, H-plane waveguide) 131 and 132 corresponds to an E-plane stub (matching circuit) and an H-plane stub (matching circuit), respectively. By moving the position of the short-circuit plate), the susceptance of the stub is changed variously, and the susceptance of the load admittance is negated.

  In addition to the E-H tuner type matcher formed for impedance matching between the metal container (load side) and the microwave oscillator (oscillation unit side), for example, a rectangular conductor as shown in FIG. In general, a slistab tuner type matching device 500 in which a plurality of impedance variable adjustment elements 141 are inserted in the long-side direction of the wave tube 146 (the direction in which the microwave travels) is also used.

  The impedance-variable adjusting element 141 is formed at the center of the upper surface portion of the rectangular waveguide 146 in the long side direction. The interval between the impedance variable adjustment elements 141 formed on the upper surface portion of the rectangular waveguide 146 is λg / 4 or λg / 8 (λg: wavelength of the microwave in the waveguide). Arranged above.

Further, the impedance varying adjustment element 141 is usually a rod-shaped conductor, and the rectangular waveguide 14
6 Impedance is changed according to the degree of insertion into the interior. When the length inserted into the rectangular waveguide 146 is smaller than ¼ of the wavelength λg in the rectangular waveguide 146, it becomes a capacitive impedance, but when it is longer than λg / 4, it becomes an inductive impedance. Further, when the rod-shaped conductor has a length of λg / 4, it is equivalent to a resonance state that causes the rectangular waveguide to be short-circuited. For this purpose, impedance matching between the metal container (load side) and the microwave oscillator (oscillation unit side) can be obtained by forming the impedance varying adjustment elements 141, which are rod-shaped conductors, at appropriate positions. .

The prior art documents are shown below.
Special table 2002-509845 gazette

  However, the conventional E-H tuner type matching unit shown in FIG. 9 or the slistab tuner type matching unit shown in FIG. 10 for achieving impedance matching described above is relatively large and structurally long. When formed with the wave oscillator, there is a problem that the direction of the microwave oscillator becomes longer and the installation space becomes wider.

  In addition, the conventional alignment method using an E-H tuner type matcher or a sliver tuner type matcher is always a metal container (load side) when the shape of the hollow body container for film formation is changed or when the film formation process is changed. And the microwave oscillator (oscillating unit side) need to be greatly matched, and there is a problem that the loss time at the time of switching becomes great.

  The present invention has been made in view of the above-mentioned conventional problems. The object of the present invention is to provide a metal container (load side) and a microwave oscillator (oscillator side) of a hollow body plasma forming apparatus. Simplified hollow body container plasma deposition that reduces the impedance matching part, reduces installation space, and enables simple and quick impedance matching when switching between film formation processes or film formation processes. Propose the device.

  In order to solve the above problems, first, the invention according to claim 1 of the present invention is a metal container in which microwave energy is contained and a hollow container for film formation is supplied, or quartz glass or the like is used in the metal container. The metal vessel is equipped with a vacuum chamber and a metal vessel or a source gas introduction tube for inserting a source gas into the vacuum chamber, and has means for evacuating the metal vessel or the vacuum chamber, and further made of metal A hollow body in which a microwave oscillator for generating plasma in a metal container or a vacuum chamber outside the container and a matching unit for impedance matching are connected to the metal container via a rectangular waveguide A container plasma film forming apparatus, wherein the matching unit for impedance matching changes the opening area inside the rectangular waveguide to change impedance. It is a hollow body vessel plasma film forming apparatus according to claim in which the waveguide for taking a slip opening area adjusting type matching device is provided.

  Next, the invention according to claim 2 of the present invention is characterized in that a waveguide opening area adjusting type matching device for obtaining the impedance matching is formed vertically inside the rectangular waveguide. 1 is a hollow body container plasma deposition apparatus according to 1;

  The invention according to claim 3 of the present invention is that the waveguide opening area adjustment type matching device for obtaining the impedance matching is formed of an adjustment element holder and one or more adjustment plates. It is a hollow body container plasma film-forming apparatus of Claim 1-2 characterized by the above-mentioned.

  The hollow body container plasma deposition system is compact by using a space-saving waveguide opening area matching type matching device that is small in impedance matching between the metal container (load side) and the oscillation part side (microwave oscillator) This improves the space efficiency during installation.

  In addition, it is easy to prepare a hollow body container to form a film beforehand and an adjustment plate for adjusting the waveguide opening area according to the film forming process, and inserting the adjusting plate into the waveguide opening area adjusting type matching device. Matching conditions can be obtained.

  Furthermore, when the shape of the hollow body container or the like is changed or the film forming process is changed, the waveguide opening area adjusting type matching device according to the present invention is produced by inserting and removing a predetermined adjusting plate. Lines can be switched, and loss time is greatly reduced.

  The hollow body plasma forming apparatus of the present invention will be described in detail along the embodiments with reference to the drawings. 1 to 6 show an embodiment of the present invention. FIG. 1 is a schematic view showing an outline of one embodiment of the hollow body container plasma film forming apparatus of the present invention. The hollow body container plasma film forming apparatus of the present invention is used for manufacturing a hollow body container having a gas barrier property by forming a thin film on the surface of the hollow body container such as a plastic bottle, a plastic cup or a plastic tray or a hollow plastic molded product. Is done. As shown in FIG. 1, the hollow body container plasma deposition apparatus 15 of the present invention includes a metal container 1, a microwave oscillator 5, a rectangular introduction pipe 6, a raw material gas introduction pipe 8, and a metal container 1 and a microwave oscillator 5. A waveguide opening area adjustment type matching unit 4 for obtaining impedance matching therebetween is formed.

  The metal container 1 is formed with an opening in which a hollow body container 2 to be formed can be taken in and out, and a lid 10 for sealing the opening. A support 13 for holding the hollow container 2 is formed in the lower direction inside the metal container 1.

  Furthermore, a raw material gas introduction pipe 8 extending from the lower outer side of the metal container 1 through the hollow body container 2 port plug portion inside the metal container 1 toward the bottom of the hollow body container 2 and a vacuum (not shown) is shown. An exhaust port 14 for exhausting air is formed to evacuate the metal container 1 with a pump or the like.

  The inside of the metal container 1 is formed in a structure that can confine microwaves and maintain a vacuum state. Further, the lid 10 for sealing the opening formed in the upper part of the metal container 1 is made of metal, and is formed in a structure capable of completely shielding microwave power and vacuum-tight in the metal container 1. Yes.

  Next, in the microwave energy injection method for generating plasma in the hollow body container 2, first, an electromagnetic wave serving as a plasma energy source is radiated by the microwave oscillator 5. The frequency of the radiated electromagnetic wave is normally 2.45 GHz, but is not particularly limited to this frequency.

  The radiated electromagnetic wave is sent from the side surface of the metal container 1 into the metal container 1 through the rectangular waveguide 6 from the waveguide opening area adjusting type matcher 4 which is an impedance matching device, and the hollow container 2. Plasma is generated by the raw material gas introduced into the inside and microwave energy, and the inner surface of the hollow container 2 supplied into the metal container 1 is formed.

  The electromagnetic wave sent into the metal container 1 does not necessarily have to be from the side surface of the metal container 1, for example, from the upper part or the lower part of the metal container 1.

  Next, FIG. 2 is a schematic diagram showing an outline of another embodiment of the hollow body container plasma deposition apparatus of the present invention. As shown in FIG. 2, the hollow body plasma forming apparatus 20 includes a metal container 1, a microwave oscillator 5, a rectangular introduction pipe 6, a raw material gas introduction pipe 8, and an impedance between the metal container 1 and the microwave oscillator 5. It is formed from a waveguide opening area adjusting type matching device 4 for obtaining matching.

  Moreover, the metal container 1 is formed with an opening through which a hollow body container 2 to be formed can be taken in and out, and a lid 10 for sealing the opening is formed. In addition, a vacuum chamber 3 for maintaining a vacuum state is formed inside the metal container 1, and a hollow body container 2 for forming a film inside the formed vacuum chamber is formed in the lower part inside the vacuum chamber 3. It is held by the support 13 that is present.

  In addition, a raw material gas introduction pipe 8 extending from the lower outer side of the metal container 1 through the hollow body container 2 port plug portion inside the metal container 1 toward the bottom of the hollow body container 2 and a vacuum (not shown) is shown. An exhaust port 14 for exhausting air in the vacuum chamber 3 is formed in order to evacuate the vacuum chamber 3 with a pump or the like.

  The vacuum chamber 3 is not particularly limited as long as it is a non-metallic material such as a quartz glass tube, which has a low loss of microwave power, is heat resistant to plasma heat, and can withstand mechanically sufficiently in a vacuum state. is not.

  Next, in the microwave energy injection method for generating plasma in the hollow container 2, first, an electromagnetic wave serving as a plasma energy source is emitted by the microwave oscillator 5. The frequency of the radiated electromagnetic wave is usually 2.45 GHz, but is not particularly limited to this frequency.

  The radiated electromagnetic wave is sent from the side of the metallic container 1 into the metallic container 1 through the rectangular waveguide 6 from the waveguide opening area adjusting type matching apparatus 20 which is an impedance matching device, and the hollow container 2. Plasma is generated by the raw material gas introduced into the inside and microwave energy, and the inner surface of the hollow container 2 supplied into the metal container 1 is formed.

  The electromagnetic waves sent into the metal container 1 do not necessarily have to be from the side surface of the metal container 1, for example, from the upper part or the lower part of the metal container 1.

  Next, FIG. 3 is a schematic view showing an outline of an embodiment of the waveguide opening area adjusting type matching device 4 for obtaining impedance matching used in the present invention. As shown in FIG. 3, the waveguide opening area adjustment type matching device 4 includes two adjustment element folders 43, two long side adjustment plates 41, and two short side adjustment plates 42, all of which are provided. It is formed from a metal body having good conductivity.

  Further, a groove is provided on the inner surface side of the adjustment element folder 43 so that the long side adjustment plate 41 and the short side adjustment plate 42 can slide. Further, on the front and back side surfaces of the adjustment element folder 43, mounting screw holes for connecting to the rectangular waveguide 6 are provided.

  Further, by changing the insertion degree of the long side adjustment plate 41 or the short side adjustment plate 42 inserted into the adjustment element folder 43, the impedance between the metal container (load side) and the microwave oscillator (oscillation unit side) is changed. Match can be obtained.

Further, since the slide of the long side adjustment plate 41 or the short side adjustment plate 42 inserted into the adjustment element folder 43 can be slid independently, it is appropriately inserted and driven alone by a signal from the control panel or the like. You can also.

Next, FIG. 6A and FIG. 6B are explanatory views for explaining the operation of the waveguide opening area adjustment type matching device 4. As shown in FIGS. 6A and 6B, thin conductor plates are inserted from above and below or from the left and right in a plane perpendicular to the tube axis of a rectangular waveguide in which TE ₁₀ waves, which are the fundamental modes of microwave propagation, are propagating. The window is formed by narrowing the cross section of the tube. In the case of FIG. 6A, it can be considered that a capacitive susceptance is placed in parallel with an equivalent round-trip line of a rectangular waveguide. The reason is that since the diaphragm is perpendicular to the electric field, a strong electric field appears between the upper and lower diaphragms, electrostatic energy is stored, and acts like a capacitance. For this reason, a capacitive window is formed. In the case of FIG. 6B, since the magnetic field is perpendicular to the diaphragm, current flows along the diaphragm, and magnetic energy is stored between the diaphragms, acting as an inductance. That is, it becomes an inductive window. Using these windows, the distance from the metal container (load side) to the window is set as appropriate, the conductance part of the load admittance is made equal to the characteristic admittance of the rectangular waveguide, and the load is changed by changing the window interval. By canceling the susceptance of the admittance, the reflected wave from the metal container (load side) is eliminated and the alignment is achieved.

  Next, FIG. 4 is a schematic view showing an outline of another embodiment of the waveguide opening area adjusting type matching device 4. In FIG. As shown in FIG. 4, the waveguide opening area adjusting type matcher 4 includes the adjusting element folder 43 and the inductive adjusting element plate 44 having the inductive window shown in FIG. And a capacitive adjustment element plate 45 having a capacitive window. These are formed from a metal body having good conductivity. Inside the adjustment element folder 43, an inductive adjustment element plate 44 and a capacitive adjustment element plate 45 are overlapped, and a groove is formed so as to be inserted from the long side direction of the adjustment element folder 43. Further, the groove formed in the adjustment element folder 43 may be a slide insertion from the long side direction or a slide insertion from the short side direction.

  Similarly to FIG. 3, mounting screw holes for connecting to the rectangular waveguide are provided on the front and back sides of the adjustment element folder 43. Also, a plurality of inductive adjustment element plates 44 and capacitive adjustment element plates 45 having different opening areas are prepared, and a metal container (by changing a combination of opening states of the respective adjustment element plates 44 and 45) Impedance matching between the load side) and the microwave oscillator (oscillator side) can be obtained. Furthermore, the alignment method shown in FIG. 4 can be obtained by using a waveguide opening area adjusting type matching device shown in FIG. 3 in advance when the hollow body container for film formation or the film formation process is changed. Furthermore, impedance matching between the metal container (load side) and the microwave oscillator (oscillation unit side) is taken, and based on the waveguide opening area data at this time, a dedicated inductive adjustment element plate for each film forming condition 44 and the capacitive adjustment element plate 45 can also be prepared.

  Next, FIG. 5 is a schematic view showing an outline of still another embodiment of the waveguide opening area adjusting type matching device 4. The waveguide opening area adjusting type matching device 4 shown in FIG. 5 is an impedance adjusting plate in which a window is formed by combining an inductive window and a capacitive window shown in FIG. 46. The impedance adjusting plate 46 is made of a metal body having good conductivity.

  Further, a groove for inserting the impedance adjustment plate 46 from the long side direction of the adjustment element folder 43 is formed inside the adjustment element folder 43. Further, the groove formed for the impedance adjustment plate 46 to be inserted into the adjustment element folder 43 may be slide insertion from the long side direction, or may be slide insertion from the short side direction. Furthermore, screw holes for attachment for connecting to the rectangular waveguide are provided on the front and back side surfaces of the adjustment element folder 43.

In addition, a plurality of impedance adjustment plates 46 having different waveguide opening areas are prepared corresponding to the hollow container for film formation or the film formation process conditions, and selected according to each film formation process. Thus, impedance matching between the metal container (load side) and the microwave oscillator (oscillation unit side) can be optimized.

  In addition, the impedance matching method takes into consideration the film forming process, and when the hollow body container for film formation or the film forming process is changed, the waveguide opening area adjusting type matching device 4 of FIGS. Use this to match the impedance between the metal container (load side) and the microwave oscillator (oscillation unit side), and to form a hollow body container for each film formation process based on the waveguide opening area data at this time Further, by preparing a dedicated impedance adjustment plate 46 corresponding to the film forming process conditions, it is possible to reduce the loss time when switching the production of the film forming process line.

  The hollow container plasma film forming apparatus of the present invention is not only used in the packaging field in which a thin film is formed on the surface of a plastic hollow body container but also used in a manufacturing apparatus in the electrical / electronic field for manufacturing semiconductor films and insulating films. Is also a great invention that can be used.

It is the schematic which shows the outline of one Example of the hollow body container plasma film-forming apparatus of this invention. It is the schematic which shows the outline of other one Example of the hollow body container plasma film-forming apparatus of this invention. It is the schematic which shows the outline of one Example of the waveguide opening area adjustment type matcher of the hollow body container plasma film-forming apparatus of this invention. It is the schematic which shows the outline of another Example of the waveguide opening area adjustment type matcher of the hollow body container plasma film-forming apparatus of this invention. It is the schematic which shows the outline of another one Example of the waveguide opening area adjustment type matcher of the hollow body container plasma film-forming apparatus of this invention. (A) (b) is explanatory drawing explaining operation | movement of the waveguide opening area adjustment type matcher of a hollow body container plasma film-forming apparatus. It is the schematic which shows the outline of the conventional plasma film-forming apparatus whole. It is the schematic which shows the outline of the conventional plasma film-forming apparatus whole. It is the schematic which shows the outline of the matching device used for all the conventional plasma film-forming apparatuses. It is the schematic which shows the outline of the matching device used for all the conventional plasma film-forming apparatuses. It is the schematic which shows the outline of the conventional plasma film-forming apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Metal container 2 ... Hollow body container 3 ... Vacuum chamber 4 ... Waveguide opening area adjustment type matcher 5 ... Microwave oscillator 6 ... Rectangular waveguide 8 ... Raw material gas introduction pipe 10 ... Cover part 13 ... Support body DESCRIPTION OF SYMBOLS 14 ... Exhaust port 41 ... Long side adjustment plate 42 ... Short side adjustment plate 43 ... Adjustment element holder 44 ... Inductive adjustment element plate 45 ... Capacitance adjustment element plate

Claims (3)

  A vacuum chamber made of quartz glass or the like and a source gas introduction pipe for inserting source gas into the metal chamber or vacuum chamber are provided in a metal vessel or a metal vessel in which a hollow body container for containing microwave energy and containing a film is supplied. A microwave oscillator provided in a metal container, having means for evacuating the metal container or the vacuum chamber, and generating plasma in the metal container or the vacuum chamber outside the metal container And a matching device for impedance matching connected to a metal container via a rectangular waveguide, wherein the matching device for impedance matching is rectangular. A waveguide opening area adjustment type matching device is provided for impedance matching by changing the opening area inside the wave tube. Hollow body container plasma film forming apparatus characterized.   2. The hollow body plasma forming apparatus according to claim 1, wherein the waveguide opening area adjusting type matching device for obtaining impedance matching is formed vertically inside the rectangular waveguide.   3. The hollow according to claim 1, wherein the waveguide opening area adjusting type matching device for obtaining impedance matching is formed of an adjusting element holder and one or more adjusting plates. Body container plasma deposition system.

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