JP2005332840A - Surface-treated al plate for heatsink, heatsink using same, and mounting component made by reflow-soldering heatsink on mounting substrate - Google Patents
Surface-treated al plate for heatsink, heatsink using same, and mounting component made by reflow-soldering heatsink on mounting substrate Download PDFInfo
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本発明はヒートシンク、特に実装基板用のヒートシンクに用いる表面処理を施してなるＡｌ板、およびそれを用いたヒートシンク、特に実装基板用のヒートシンク、ならびにそのヒートシンクを実装基板にリフローハンダ付けしてなる実装部品に関する。 The present invention relates to a heat sink, particularly an Al plate subjected to a surface treatment used for a heat sink for a mounting board, and a heat sink using the same, particularly a heat sink for a mounting board, and a mounting formed by reflow soldering the heat sink to the mounting board. Regarding parts.
電子機器の小型化や多機能化にともなって機器の発熱密度が増大し、機器の誤動作を生じたり、人体に対して低温火傷を生じさせる危険性が高まっており、電子機器の狭い筐体内部や間隙が殆ど無い状態で装填された部品の温度上昇を抑制する必要が生じている。これらの電子機器に用いるプリント基板においては、部品の温度上昇を抑制するために、放熱用のヒートシンクを取り付けた基板が用いられている。ヒートシンクは、従来はスルーホールにより基板に穿設した孔を通してリード線やチップの足などを基板の裏面の回路に導き、溶融ハンダに浸漬して接着させていた。しかし、上記のようにさらなる電子機器の小型化や多機能化を達成するため、近年では基板表面の回路に直接チップなどの部品をハンダ付けした表面実装部品が用いられるようになってきており、充分な放熱が得られるような大きさのヒートシンクを設けることが困難になっている。そのため、図２に示すように、実装基板に表面実装したチップなどの部品上に接着剤を用いてヒートシンクを装着することが行われている（例えば、特許文献１参照）。しかし、接着剤を用いた場合、熱伝導性の低下を極力抑制するために極めて薄い接着層を設けて接着させる必要があり、安定した強固な接着強度が得られにくく、また、接着剤を塗布し硬化させる工程を余分に必要としている。 As electronic devices become smaller and more multifunctional, the heat generation density of the devices increases, increasing the risk of malfunctioning of the devices and causing low-temperature burns to the human body. In addition, there is a need to suppress the temperature rise of parts loaded with almost no gaps. In printed boards used in these electronic devices, a board to which a heat sink for heat dissipation is attached is used in order to suppress the temperature rise of components. Conventionally, a heat sink has led a lead wire, a chip leg, or the like to a circuit on the back surface of the substrate through a hole formed in the substrate by a through hole, and is bonded by being immersed in molten solder. However, in order to achieve further downsizing and multi-functionalization of electronic devices as described above, in recent years, surface-mounted components obtained by soldering components such as chips directly on the circuit on the substrate surface have been used. It has become difficult to provide a heat sink that is large enough to obtain sufficient heat dissipation. Therefore, as shown in FIG. 2, a heat sink is mounted on a component such as a chip surface-mounted on a mounting board using an adhesive (see, for example, Patent Document 1). However, when an adhesive is used, it is necessary to provide an extremely thin adhesive layer for adhesion in order to suppress the decrease in thermal conductivity as much as possible, and it is difficult to obtain a stable and strong adhesive strength. It requires an extra step of curing.
本発明に関する先行技術文献として以下のものがある。 Prior art documents relating to the present invention include the following.
本発明は、実装基板に接着して装着した際の熱伝導性および接着力が大きく、平易かつ安価に実装基板に装着することが可能なヒートシンクに適用する表面処理Ａｌ板、およびその表面処理Ａｌ板を用いてなるヒートシンク、ならびにそのヒートシンクをリフローハンダ付けしてなる実装部品を提供することを目的とする。 The present invention provides a surface-treated Al plate applied to a heat sink that has a large thermal conductivity and adhesive strength when mounted on a mounting substrate and can be mounted on the mounting substrate easily and inexpensively, and the surface-treated Al It is an object of the present invention to provide a heat sink using a plate and a mounting component obtained by reflow soldering the heat sink.
本発明の目的を達成するため、本発明のヒートシンク用の表面処理Ａｌ板は、Ａｌ基板表面に、基板表面側から順にＺｎ層、Ｎｉ層を形成させてなり、ＪＩＳ Ｚ ３２８２：Ｈ６０Ａに基づくハンダ強度が３ｋｇｆ／７ｍｍ以上である、ヒートシンク用の表面処理Ａｌ板（請求項１）、または
Ａｌ基板表面に、基板表面側から順にＺｎ層、Ｎｉ層、Ｓｎを形成させてなり、ＪＩＳ Ｚ ３２８２：Ｈ６０Ａに基づくハンダ強度が３ｋｇｆ／７ｍｍ以上である、ヒートシンク用の表面処理Ａｌ板（請求項２）であり、
上記（請求項１または２）のヒートシンク用の表面処理Ａｌ板において、前記Ｚｎ層が５〜５００ｍｇ／ｍ２の皮膜量で設けられてなること（請求項３）を特徴とし、また
上記（請求項１または請求項３）のヒートシンク用の表面処理Ａｌ板において、Ｎｉ層上にさらに熱放射性を向上させる層を形成させてなること（請求項４）を特徴とし、
上記（請求項２または請求項３）のヒートシンク用の表面処理Ａｌ板において、Ｓｎ層上にさらに熱放射性を向上させる層を形成させてなること（請求項５）を特徴とする。
In order to achieve the object of the present invention, a surface-treated Al plate for a heat sink according to the present invention is formed by forming a Zn layer and a Ni layer on an Al substrate surface in this order from the substrate surface side. A surface-treated Al plate for a heat sink having a strength of 3 kgf / 7 mm or more (Claim 1), or a Zn layer, a Ni layer, and Sn are formed in order from the substrate surface side on the surface of the Al substrate. JIS Z 3282 A surface treatment Al plate for a heat sink having a solder strength based on H60A of 3 kgf / 7 mm or more (Claim 2).
In the surface-treated Al plate for a heat sink according to the above (Claim 1 or 2), the Zn layer is provided in a coating amount of 5 to 500 mg / m 2 (Claim 3), and the (Claim) In the surface-treated Al plate for a heat sink according to item 1 or claim 3, a layer for further improving thermal radiation is formed on the Ni layer (claim 4),
The surface-treated Al plate for a heat sink according to the above (claim 2 or claim 3) is characterized in that a layer for further improving thermal radiation is formed on the Sn layer (claim 5).
また、本発明のヒートシンクは、上記（請求項１〜３）の表面処理Ａｌ板を用いてなるヒ−トシンク（請求項６）であり、
上記（請求項６）のヒートシンクにおいて、熱伝導率が６０Ｗ／ｍ・Ｋ以上であること（請求項７）を特徴とし、またはさらに
本発明のヒートシンクは、上記（請求項４または請求項５）の表面処理Ａｌ板を用いてなるヒ−トシンク（請求項８）であり、
上記（請求項８）のヒートシンクにおいて、熱放射率が０．２〜０．９であること（請求項９）を特徴とする。
Moreover, the heat sink of the present invention is a heat sink (Claim 6) using the surface-treated Al plate of the above (Claims 1 to 3).
In the heat sink of the above (Claim 6), the thermal conductivity is 60 W / m · K or more (Claim 7), or the heat sink of the present invention is the above (Claim 4 or Claim 5). A heat sink (Claim 8) using the surface-treated Al plate of
In the heat sink of the above (claim 8), the thermal emissivity is 0.2 to 0.9 (claim 9).
そして、本発明の実装部品は、上記（請求項６〜９）のヒートシンクを、実装基板にリフローハンダ付けしてなる実装部品（請求項１０）である。 The mounting component of the present invention is a mounting component (Claim 10) obtained by reflow soldering the heat sink described above (Claims 6 to 9) to a mounting substrate.
本発明のヒートシンク用表面処理Ａｌ板は、軽量で熱伝導性が大きいために小型の電子機器用のヒートシンクとして好適に適用できる。また、本発明のヒートシンクはＡｌ基板表面に置換めっきによりＺｎ層を形成させ、その上にＮｉ層、またはＮｉ層とＳｎ層をめっきにより形成させてなる表面処理Ａｌ板を用いているので、ハンダ付けが可能であり、リフローハンダ付け法などを用いて半導体チップなどの実装部品とともに、同時に実装基板の回路上などに接着することができる。また、接着剤を用いず溶融したハンダで接着するので、強固な接着状態が得られ、熱伝導性も殆ど低下することがないので、優れた放熱性を具備することができる。 Since the surface-treated Al plate for heat sink of the present invention is lightweight and has high thermal conductivity, it can be suitably applied as a heat sink for small electronic devices. The heat sink of the present invention uses a surface-treated Al plate in which a Zn layer is formed on the Al substrate surface by displacement plating, and a Ni layer or a Ni layer and a Sn layer are formed thereon by plating. It can be attached, and can be bonded together with a mounting component such as a semiconductor chip on a circuit of a mounting substrate at the same time by using a reflow soldering method or the like. Moreover, since it adhere | attaches with the melt | dissolved solder | pewter without using an adhesive agent, a strong adhesion | attachment state is obtained and thermal conductivity hardly falls, Therefore The outstanding heat dissipation can be comprised.
以下、本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail.
本発明のヒートシンク用表面処理Ａｌ板の基板となるＡｌ板としては、純Ａｌ板およびＪＩＳ規格の１０００系、２０００系、３０００系、５０００系、６０００系、７０００系のいずれのＡｌ合金板も用いることができる。放熱性を向上させるため、プレス加工により表面にフィン状の凹凸部を形成させたり、ローレット加工などにより表面を粗面加工してもよい。これらの純Ａｌ板やＡｌ合金板を脱脂し、次いで酸性エッチングし、次いでスマットを除去した後、Ｚｎを置換めっきする。Ｚｎの置換めっきは、硝酸浸漬処理、第一Ｚｎ置換処理、硝酸亜鉛剥離処理、第二Ｚｎ置換処理の工程を経ておこなう。この場合、各工程の処理後には水洗処理を実施する。この第一Ｚｎ置換処理および第二Ｚｎ置換処理により形成するＺｎ層は、この置換処理後にＮｉめっきを施す際にわずかに溶解するので、Ｚｎ層の皮膜量としてはＮｉめっき後の状態で５〜５００ｍｇ／ｍ２ であることが好ましく、３０〜３００ｍｇ／ｍ２ であることがより好ましい。皮膜量は処理液中のＺｎイオンの濃度および第二Ｚｎ置換処理において処理液中に浸漬する時間を適宜選択して調整する。皮膜量が５ｍｇ／ｍ２ 未満であるとＺｎ層の上に形成させるＮｉめっき層との密着性に乏しくなり、曲げ加工を施した際にめっき層が剥離しやすくなる。一方、皮膜量が５００ｍｇ／ｍ２ を超えるとＮｉめっきが不均一になり、ハンダ強度が低下する。 As the Al plate to be the substrate of the surface-treated Al plate for heat sink of the present invention, a pure Al plate and any JIS standard 1000 series, 2000 series, 3000 series, 5000 series, 6000 series, 7000 series Al alloy board are used. be able to. In order to improve heat dissipation, a fin-shaped uneven portion may be formed on the surface by pressing, or the surface may be roughened by knurling. These pure Al plates and Al alloy plates are degreased, then subjected to acidic etching, and after removing the smut, Zn is substituted. The substitution plating of Zn is performed through the steps of nitric acid immersion treatment, first Zn substitution treatment, zinc nitrate stripping treatment, and second Zn substitution treatment. In this case, the water washing process is implemented after the process of each process. Since the Zn layer formed by the first Zn substitution treatment and the second Zn substitution treatment is slightly dissolved when Ni plating is performed after this substitution treatment, the coating amount of the Zn layer is 5 to 5 in the state after Ni plating. it is preferably 500 mg / m 2, and more preferably 30 to 300 mg / m 2. The coating amount is adjusted by appropriately selecting the concentration of Zn ions in the treatment liquid and the time of immersion in the treatment liquid in the second Zn substitution treatment. When the coating amount is less than 5 mg / m 2 , the adhesion with the Ni plating layer formed on the Zn layer becomes poor, and the plating layer is easily peeled off when bending is performed. On the other hand, when the coating amount exceeds 500 mg / m 2 , the Ni plating becomes non-uniform and the solder strength decreases.
次いで、このようにして形成されたＺｎ層の上にＮｉ層をめっきする。Ｎｉめっき層は、電気めっき法または無電解めっき法のいずれのめっき法を用いて形成させてもよい。無電解めっき法を用いる場合は、還元剤としてＰ化合物やＢ化合物を用いるので、Ｎｉめっき膜はＮｉ−Ｐ合金やＮｉ−Ｂ合金からなる皮膜として形成されるが、電気めっき法による純ニッケルからなる皮膜と同様に、めっき皮膜のＡｌ基板に対する優れた密着性や、優れたハンダ濡れ性およびハンダ強度が得られる。このようにして得られるＮｉ層は、皮膜量として０．２〜５０ｇ／ｍ２ であることが好ましく、１〜１０ｇ／ｍ２ であることがより好ましい。皮膜量が０．２ｇ／ｍ２ 未満であるとＮｉ層がＺｎ層の全面を均一に被覆することができないので十分なハンダ強度が得られない。一方、皮膜量が５０ｇ／ｍ２ を超えるとハンダ濡れ性およびハンダ強度の向上効果が飽和し、コスト的に有利でなくなる。このようにしてＡｌ板にＺｎ層、Ｎｉ層を形成させることにより、本発明の表面処理Ａｌ板が得られる。 Next, a Ni layer is plated on the Zn layer thus formed. The Ni plating layer may be formed using any plating method of electroplating or electroless plating. When the electroless plating method is used, since the P compound or B compound is used as the reducing agent, the Ni plating film is formed as a film made of a Ni—P alloy or a Ni—B alloy. As with the coating film, excellent adhesion of the plating film to the Al substrate, and excellent solder wettability and solder strength can be obtained. Thus Ni layer obtained is preferably 0.2 to 50 g / m 2 as a film weight, and more preferably 1 to 10 g / m 2. If the coating amount is less than 0.2 g / m 2 , the Ni layer cannot uniformly cover the entire surface of the Zn layer, and thus sufficient solder strength cannot be obtained. On the other hand, if the coating amount exceeds 50 g / m 2 , the effect of improving the solder wettability and the solder strength is saturated, which is not advantageous in terms of cost. Thus, the surface-treated Al plate of the present invention is obtained by forming the Zn layer and the Ni layer on the Al plate.
本発明の表面処理Ａｌ板は、上記のようにＡｌ板にＺｎ層、Ｎｉ層を形成させた後、さらにその上にＳｎ層をめっきしたものであってもよい。Ｓｎめっき層は、電気めっき法または無電解めっき法のいずれのめっき法を用いて形成させてもよい。Ｓｎ層は、皮膜量として０．２〜２０ｇ／ｍ２ であることが好ましく、１〜１０ｇ／ｍ２ であることがより好ましい。皮膜量が０．２ｇ／ｍ２ 未満であると非活性のフラックスを用いた場合にハンダが濡れにくくなる。一方、皮膜量が２０ｇ／ｍ２ を超えてもハンダ濡れ性およびハンダ強度の向上効果が飽和し、コスト的に有利でなくなる。このようにしてＡｌ板にＺｎ層、Ｎｉ層、Ｓｎ層を形成させることにより、本発明の表面処理Ａｌ板が得られる。また、これらの表面処理Ａｌ板を加熱して、Ａｌ基板とＺｎ層、Ｚｎ層とＮｉ層を拡散させることにより、Ａｌ基板とめっき層および各めっき層同士の密着強度を向上させることもできる。同様に、表面処理Ａｌ板の最表面のＳｎ層が下層のＮｉ層やＡｌ基板と合金化して全て失われることなく遊離Ｓｎが残存する程度に加熱して、Ａｌ基板とＺｎ層、Ｚｎ層とＮｉ層、およびＮｉ層とＳｎ層、またはＡｌ基板とＺｎ層とＮｉ層、Ｚｎ層とＮｉ層とＳｎ層を拡散させることにより、Ａｌ基板とめっき層および各めっき層同士の密着強度を向上させることもできる。 The surface-treated Al plate of the present invention may be obtained by forming a Zn layer and a Ni layer on the Al plate as described above, and further plating an Sn layer thereon. The Sn plating layer may be formed using any plating method of electroplating or electroless plating. The Sn layer is preferably 0.2 to 20 g / m 2 and more preferably 1 to 10 g / m 2 as a coating amount. When the coating amount is less than 0.2 g / m 2 , solder becomes difficult to wet when an inactive flux is used. On the other hand, even if the coating amount exceeds 20 g / m 2 , the effect of improving the solder wettability and the solder strength is saturated, which is not advantageous in terms of cost. Thus, the surface-treated Al plate of the present invention can be obtained by forming the Zn layer, Ni layer, and Sn layer on the Al plate. Moreover, the adhesion strength of an Al substrate, a plating layer, and each plating layer can also be improved by heating these surface-treated Al plates and diffusing the Al substrate and the Zn layer, and the Zn layer and the Ni layer. Similarly, the Sn layer on the outermost surface of the surface-treated Al plate is alloyed with the underlying Ni layer or Al substrate and heated to such an extent that free Sn remains without being lost, and the Al substrate, Zn layer, Zn layer, The adhesion strength between the Al substrate, the plating layer, and each plating layer is improved by diffusing the Ni layer, the Ni layer and the Sn layer, or the Al substrate, the Zn layer, the Ni layer, and the Zn layer, the Ni layer, and the Sn layer. You can also.
これらの本発明のヒートシンク用表面処理Ａｌ板は６０Ｗ／ｍ・Ｋ以上の熱伝導率を有しており、熱伝導性に優れたヒートシンクとして発熱体から熱を好適に吸収して放熱することができるが、Ｓｎ層上に熱放射性を向上させる層を設けることにより、放熱性をさらに向上させることが可能となる。本発明の表面処理Ａｌ板の熱放射率は０．０５〜０．１前後であるが、熱放射性を向上させる層を設けることにより、熱放射率は０．２〜０．９程度まで向上させることができる。熱放射性を向上させる層は以下のようにしてＮｉ層上またはＳｎ層上に形成させる。すなわち、Ｚｎ層、Ｎｉ層、またはＺｎ層、Ｎｉ層、Ｓｎ層を順に形成させた表面処理Ａｌ板、またはこれらの表面処理Ａｌ板に上記の加熱拡散処理を施した後、黒色顔料と水溶性ロジンを含有させた水系アクリル樹脂や水系ウレタン樹脂などの水系樹脂を塗布し、乾燥させて処理皮膜とする。この処理皮膜はフラックス効果を有しており、ハンダ濡れ性も向上させる。これらの水系樹脂の濃度は１００〜９００ｇ／Ｌであることが好ましく、黒色顔料は樹脂中に樹脂の固形分に対して５０重量％以下で含有させることが好ましい。５０重量％を超えて含有させるとハンダ濡れ性およびハンダ強度が不良となる。乾燥後の処理皮膜の厚さは０．０５〜１０μｍであることが好ましい。０．０５μｍ未満では放熱性の向上効果に乏しく、１０μｍを超えると熱伝導性が損なわれるようになり、放熱性を向上させることが不可能になる。このようにＳｎ層上に熱放射性を向上させる層を設けることにより、ヒートシンクの放熱性を向上させることができる。 These surface-treated Al plates for heat sinks according to the present invention have a thermal conductivity of 60 W / m · K or more, and as heat sinks having excellent thermal conductivity, heat can be suitably absorbed and dissipated from the heating element. However, it is possible to further improve the heat dissipation by providing a layer that improves thermal radiation on the Sn layer. Although the thermal emissivity of the surface-treated Al plate of the present invention is around 0.05 to 0.1, the thermal emissivity is improved to about 0.2 to 0.9 by providing a layer that improves the thermal emissivity. be able to. The layer for improving thermal radiation is formed on the Ni layer or the Sn layer as follows. That is, a Zn layer, a Ni layer, or a surface-treated Al plate in which a Zn layer, a Ni layer, and a Sn layer are formed in this order, or after performing the above heat diffusion treatment on these surface-treated Al plates, A water-based resin such as water-based acrylic resin or water-based urethane resin containing rosin is applied and dried to form a treated film. This treated film has a flux effect and improves solder wettability. The concentration of these aqueous resins is preferably 100 to 900 g / L, and the black pigment is preferably contained in the resin at 50% by weight or less based on the solid content of the resin. If it exceeds 50% by weight, solder wettability and solder strength will be poor. The thickness of the treated film after drying is preferably 0.05 to 10 μm. If it is less than 0.05 μm, the effect of improving the heat dissipation is poor, and if it exceeds 10 μm, the thermal conductivity is impaired, and it becomes impossible to improve the heat dissipation. Thus, by providing the layer which improves a thermal radiation property on Sn layer, the heat dissipation of a heat sink can be improved.
このようにして作成される本発明のヒートシンク用表面処理Ａｌ板を切断、折曲加工などにより、所定寸法の形状として本発明のヒートシンクとする。本発明のヒートシンクは、図２の従来例と同様に接着剤を用いて部品上に接着することもできるが、ハンダ付性に優れたＮｉ層またはＳｎ層や、さらにＮｉ層またはＳｎ層上にフラックス効果を有する層を備えているので、半導体チップなどをクリームハンダを用いて実装基板上にリフローハンダする際に、図１に示すように実装基板の銅箔からなる回路上または実装基板の銅箔部分に特に設けたヒートシンク接着用部分に、クリームハンダを用いて半導体チップなどの電子部品とともに実装基板にリフローハンダ付けすることができる。そのため、ヒートシンク接着専用の工程を削除することが可能となる。また、本発明のヒートシンクはハンダ濡れ性も優れているので、溶融したハンダで接着面全体が濡れ、ハンダ固化後に強力な接着状態が得られる。 The heat treatment surface treatment Al plate for heat sink of the present invention thus prepared is cut, bent, or the like to obtain a heat sink of the present invention having a predetermined size. The heat sink of the present invention can be bonded onto a component using an adhesive as in the conventional example of FIG. 2, but on the Ni layer or Sn layer excellent in solderability, and further on the Ni layer or Sn layer. Since a layer having a flux effect is provided, when reflow soldering a semiconductor chip or the like on a mounting substrate using cream solder, as shown in FIG. 1, the circuit is made of a copper foil of the mounting substrate or the copper of the mounting substrate. Reflow soldering can be performed on the mounting substrate together with electronic components such as a semiconductor chip using cream solder on a heat sink adhesion portion provided particularly on the foil portion. Therefore, it becomes possible to delete a process dedicated to heat sink adhesion. In addition, since the heat sink of the present invention has excellent solder wettability, the entire bonding surface is wetted by molten solder, and a strong bonding state can be obtained after the solder is solidified.
以下、実施例にて本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to examples.
（実施例１）
（供試板の作成）
Ａｌ合金板（ＪＩＳ ５０５２Ｈ１９、板厚０.５ｍｍ）をめっき基板として、アルカリ液で脱脂し、次いで硫酸中でエッチング処理を施し、次いで硝酸中で脱スマット処理を施した後、水酸化ナトリウム：１５０ｇ／Ｌ、ロッシェル塩：５０ｇ／Ｌ、酸化亜鉛：２５ｇ／Ｌ、塩化第一鉄１．５ｇ／Ｌを含む処理液中に浸漬して第一Ｚｎ置換処理を行い、次いで４００ｇ／Ｌの硝酸水溶液中に浸漬して置換析出したＺｎを除去した後、第一Ｚｎ置換処理で用いたのと同一の処理液中に浸漬して第二Ｚｎ置換処理を行った。次いで、この置換Ｚｎめっき上にワット浴を用いて下記の条件でＮｉめっきを施して供試板とした。さらに、一部の供試板は上記のようにしてＮｉめっきを施した後、さらにＮｉめっき上にフェロスタン浴を用いてＳｎめっきを施し、供試板とした。
Example 1
(Create test plate)
An Al alloy plate (JIS 5052H19, plate thickness 0.5 mm) was used as a plating substrate, degreased with an alkaline solution, then etched in sulfuric acid, then desmutted in nitric acid, and then sodium hydroxide: 150 g / L, Rochelle salt: 50 g / L, zinc oxide: 25 g / L, immersed in a treatment solution containing 1.5 g / L of ferrous chloride to perform a first Zn substitution treatment, and then a 400 g / L aqueous nitric acid solution After removing the Zn deposited by immersion by immersion, the second Zn substitution treatment was performed by immersing in the same treatment liquid used in the first Zn substitution treatment. Next, Ni plating was performed on the substituted Zn plating using a Watt bath under the following conditions to obtain a test plate. Further, some of the test plates were subjected to Ni plating as described above, and then Sn plating was performed on the Ni plating using a ferrostan bath to obtain test plates.
<Ｎｉめっき>
浴組成
硫酸ニッケル ３００ｇ／Ｌ
塩化ニッケル ４５ｇ／Ｌ
ホウ酸 ４５ｇ／Ｌ
浴温 ５５℃
ｐＨ ３．０
電流密度 ５Ａ／ｄｍ２
<Ｓｎめっき>
浴組成
硫酸第一錫 ３０ｇ／Ｌ
フェノールスルホン酸 ３０ｇ／Ｌ
エトキシ化−αナフトール ２ｇ／Ｌ
浴温 ４０℃
ｐＨ ２．０
電流密度 ５Ａ／ｄｍ２
<Ni plating>
Bath composition Nickel sulfate 300g / L
Nickel chloride 45g / L
Boric acid 45g / L
Bath temperature 55 ° C
pH 3.0
Current density 5A / dm 2
<Sn plating>
Bath composition Stannous sulfate 30g / L
Phenolsulfonic acid 30g / L
Ethoxylated-α-naphthol 2g / L
Bath temperature 40 ℃
pH 2.0
Current density 5A / dm 2
一部の供試板については、これらのめっきを施した後、２８０℃に加熱し、Ａｌ基板とめっき層およびめっき層同士を拡散させる拡散熱処理を施した。Ｓｎ層を形成させた供試板の場合は、Ｓｎ層を溶融させるとともに、最表面の遊離Ｓｎが失われない程度にＡｌ基板とめっき層およびめっき層同士を拡散させた。また他の一部の供試板については、表２に示す液組成の処理液を用いて熱放射性を向上させる層を形成させた。 About some test plates, after performing these plating, it heated to 280 degreeC and performed the diffusion heat processing which diffuses Al board | substrate, a plating layer, and plating layers. In the case of the test plate on which the Sn layer was formed, the Al layer, the plating layer, and the plating layers were diffused to such an extent that the Sn layer was melted and free Sn on the outermost surface was not lost. Moreover, about the other one part test plate, the layer which improves thermal radiation was formed using the process liquid of the liquid composition shown in Table 2.
また、比較用として、上記のＡｌ合金板にＺｎ置換めっき層を設けずに直接Ｎｉめっき層およびＳｎめっき層を設けた供試板、上記のＡｌ合金板にＺｎ置換めっき層を設けずにＳｎめっき層のみを設けた供試板、低炭素鋼板（板厚０．５ｍｍ）にＳｎめっき層のみを設けた供試板を作成した。 For comparison, a test plate in which a Ni plating layer and a Sn plating layer were directly provided without providing a Zn substitution plating layer on the Al alloy plate, and a Sn substitution plating layer not provided on the Al alloy plate. A test plate provided only with a plating layer and a test plate provided only with a Sn plating layer on a low carbon steel plate (plate thickness 0.5 mm) were prepared.
（供試板の特性評価）
上記のようにして得られた供試板を、下記の特性について評価した。
(Characteristic evaluation of test plate)
The test plates obtained as described above were evaluated for the following characteristics.
[ハンダ濡れ性]
メニスコグラフ法（ＭＩＬ−ＳＴＤ−８８３Ｂ）により、ＳＯＬＤＥＲＣＨＥＣＫＥＲ（ＭＯＤＥＬ ＳＡＴ−５０００、ＲＨＥＳＣＡ製）を使用し、上記の各供試材から切り出した幅７ｍｍの試片をフラックス（ＮＡ−２００、タムラ化研製）に浸漬し、その後２５０℃に保持したハンダ浴（ＪＩＳ Ｚ ３２８２：Ｈ６０Ａ）に前記のフラックスを塗布した試片を浸漬速度：２ｍｍ／秒で２ｍｍ浸漬し、ハンダが濡れるまでの時間ゼロクロスタイムを測定し、下記に示す基準でハンダ濡れ性を評価した。短時間であるほどハンダ濡れ性が良好であることを示す。
◎：５秒未満
○：５〜７秒未満
△：７〜１０未満
×：１０秒以上
[Solder wettability]
Using a SOLDERCHECKER (MODEL SAT-5000, manufactured by RHESCA) by a meniscograph method (MIL-STD-883B), a specimen having a width of 7 mm cut out from each of the above test materials was fluxed (NA-200, manufactured by Tamura Kaken) The specimen coated with the above flux was immersed in a solder bath (JIS Z 3282: H60A) maintained at 250 ° C. and immersed for 2 mm at an immersion speed of 2 mm / second, and the time until the solder was wet was measured. The solder wettability was evaluated according to the following criteria. The shorter the time, the better the solder wettability.
◎: Less than 5 seconds ○: Less than 5-7 seconds △: Less than 7-10 ×: More than 10 seconds
[ハンダ強度]
上記の各供試材から切り出した幅７ｍｍ、長さ５０ｍｍの試片をＬ字型に折り曲げた２つの切り出し片を、評価面を向かい合わせてＴ字状になるように重ね、Ｔ字の縦棒の部分の間に厚さ：０．５ｍｍの鋼板を挟み、Ｔ字の縦棒の下部に０．５ｍｍの空隙部を形成させた試片を作成した。この試片の空隙部に上記のハンダ濡れ性の評価に用いたのと同様のフラックスを塗布した後、ソルダーチェッカー（ＳＡＴ−５０００、レスカ製）を用い、２５０℃に保持したハンダ浴（ＪＩＳ Ｚ ３２８２：Ｈ６０Ａ）に試片の空隙部を１０ｍｍの深さまで浸漬し５秒間保持して空隙部にハンダを充填させた後取り出し、Ｔピール試験片とした。次いでテンシロンを用い、Ｔピール試験片のＴ字の横棒部をチャックで挟んで引張ってＴ字の縦棒部のハンダ充填部を引き剥がし、ハンダ強度を測定し、下記に示す基準でハンダ強度を評価した。
◎：４ｋｇｆ／７ｍｍ以上
○：３〜４ｋｇｆ／７ｍｍ未満
△：１〜３ｋｇｆ／７ｍｍ未満
×：１ｋｇｆ／７ｍｍ未満
[Solder strength]
Two cut pieces obtained by bending a specimen having a width of 7 mm and a length of 50 mm cut out from each of the above-mentioned specimens into an L-shape are stacked so that the evaluation surfaces face each other in a T-shape, A steel sheet having a thickness of 0.5 mm was sandwiched between the bar portions, and a test piece was formed in which a 0.5 mm gap was formed at the bottom of the T-shaped vertical bar. After applying the same flux as that used for the evaluation of the solder wettability to the void portion of the specimen, a solder bath (JIS Z, JIS Z) was used, which was kept at 250 ° C. using a solder checker (SAT-5000, manufactured by Resuka). 3282: H60A), the void portion of the specimen was dipped to a depth of 10 mm, held for 5 seconds, filled with solder in the void portion, and then taken out to obtain a T peel specimen. Next, using Tensilon, the T-shaped horizontal bar part of the T-peel specimen is sandwiched and pulled, the solder filling part of the T-shaped vertical bar part is peeled off, the solder strength is measured, and the solder strength is measured according to the criteria shown below. Evaluated.
◎: 4 kgf / 7 mm or more ○: Less than 3-4 kgf / 7 mm △: Less than 1-3 kgf / 7 mm ×: Less than 1 kgf / 7 mm
[めっき皮膜の密着性]
上記の各供試材から幅１５ｍｍ、長さ５０ｍｍの試片を切り出し、９０°折り曲げ、折り曲げ部にスコッチテープを貼り付け、次いで引き剥がした後、めっき皮膜の剥離の有無を肉眼観察し、下記の基準でめっき皮膜の密着性を評価した。
○：剥離は認められない。
×：剥離が認められる。
[Adhesion of plating film]
A specimen having a width of 15 mm and a length of 50 mm was cut out from each of the above test materials, bent at 90 °, a scotch tape was attached to the bent portion, and then peeled off. The adhesion of the plating film was evaluated based on the above criteria.
○: No peeling is observed.
X: Peeling is recognized.
[放熱性]
上記の各供試材から幅５ｍｍ、長さ１０ｍｍの試片を切り出し、光交流法熱定数測定装置（ＰＩＴ−Ｒ２型、真空理工製）を用いて熱伝導率を測定した。また、放射率計（Ｄ ａｎｄ Ｓ ＡＥＲＤ放射率計、京都電子工業製）を用いて熱放射率を測定し、下記に示す基準で放熱性を評価した。
◎：熱伝導率６０Ｗ／ｍ・Ｋ以上でかつ熱放射率０．２０以上
○：熱伝導率６０Ｗ／ｍ・Ｋ以上でかつ熱放射率０．０５〜０．２０未満
△：熱伝導率４０〜６０Ｗ／ｍ・Ｋ未満
×：熱伝導率４０Ｗ／ｍ・Ｋ未満
[Heat dissipation]
A specimen having a width of 5 mm and a length of 10 mm was cut out from each of the above test materials, and the thermal conductivity was measured using an optical alternating current method thermal constant measuring apparatus (PIT-R2 type, manufactured by Vacuum Riko). Moreover, the thermal emissivity was measured using the emissometer (D and SAERD emissometer, Kyoto Electronics Industry make), and the heat dissipation was evaluated on the basis of the following criteria.
A: Thermal conductivity 60 W / m · K or more and thermal emissivity 0.20 or more ○: Thermal conductivity 60 W / m · K or more and thermal emissivity 0.05 to less than 0.20 Δ: Thermal conductivity 40 ˜less than 60 W / m · K ×: thermal conductivity less than 40 W / m · K
表３に示すように、Ａｌ板にＺｎ層、Ｎｉ層、またはＺｎ層、Ｎｉ層、Ｓｎ層を形成させた本発明のヒートシンク用表面処理Ａｌ板はハンダの濡れ性に優れ、ハンダ強度が高く、かつ熱伝導率が大きく放熱性に優れている。また、この表面処理Ａｌ板のＳｎ層上に熱放射性を向上させる層を設けることにより、放熱性がさらに向上する。そのため、ハンダ付けが可能な放熱性に優れたヒートシンクとして好適に適用できる。 As shown in Table 3, the surface-treated Al plate for heat sink of the present invention in which a Zn layer, Ni layer, Zn layer, Ni layer, or Sn layer is formed on an Al plate has excellent solder wettability and high solder strength. In addition, the thermal conductivity is large and the heat dissipation is excellent. Moreover, heat dissipation is further improved by providing a layer that improves thermal radiation on the Sn layer of the surface-treated Al plate. Therefore, it can be suitably applied as a heat sink with excellent heat dissipation that can be soldered.
（実施例２）
表１に示す試料番号１４の供試板からコの字状のヒートシンク（幅：５ｍｍ、中央平坦部長さ：１０ｍｍ、中央平坦部の両端の垂直部長さ：３ｍｍ）を切出し、実装基板（面積：４０ｍｍ×６０ｍｍ）の銅箔の配線部分（幅：３ｍｍ）に、１０個ずつ、クリームハンダ（千住金属工業（株）製、２２１ＢＭ５−Ｋ）を用いてリフロー付けするか、または銀ペースト（京セラケミカル（株）製、ＣＴ２８４）を用いて接着し、実装基板の裏面に８０ｇの重りを取り付け、携帯電話器とほぼ同重量の落下試験用試験片とした。これらのヒートシンクをクリームハンダでリフロー付けした試験片および銀ペーストで接着した試験片をそれぞれ１５０組作成した。これらの試験片を１．５ｍの高さからコンクリートの床面に落下させ、実装基板から剥離脱落したヒートシンクの個数を計測したところ、クリームハンダでリフロー付けした場合は、１５０組の試験片についてヒートシンクが剥離脱落したものは皆無であった。一方、銀ペーストで接着した場合は、１組の試験片で２個のヒートシンクが剥離脱落し、３組の試験片で１個のヒートシンクが剥離脱落した。このように、本発明の実装基板にヒートシンクをクリームハンダでリフロー付けした実装部品においては、ヒートシンクと実装基板との極めて高い接着力が得られ、小型電子機器などに組み込まれて落下した場合でも、ヒートシンクが実装基板から剥離脱落することがない。
(Example 2)
A U-shaped heat sink (width: 5 mm, central flat part length: 10 mm, vertical part length at both ends of the central flat part: 3 mm) was cut out from the test plate of sample number 14 shown in Table 1, and mounted substrate (area: 10 pieces of copper foil wiring part (width: 3 mm) of 40 mm × 60 mm) is reflowed with cream solder (221BM5-K, manufactured by Senju Metal Industry Co., Ltd.) or silver paste (Kyocera Chemical). Using a CT284 manufactured by Co., Ltd., a weight of 80 g was attached to the back surface of the mounting substrate, and a drop test specimen having almost the same weight as the mobile phone was obtained. 150 sets of test pieces in which these heat sinks were reflowed with cream solder and test pieces bonded with silver paste were prepared. When these test pieces were dropped onto a concrete floor from a height of 1.5 m and the number of heat sinks peeled off from the mounting board was measured, 150 pieces of test pieces were heat sinked when reflowed with cream solder. However, there was nothing that peeled off. On the other hand, in the case of bonding with silver paste, two heat sinks were peeled off by one set of test pieces, and one heat sink was peeled off by three sets of test pieces. In this way, in the mounting component in which the heat sink is reflowed with cream solder on the mounting board of the present invention, an extremely high adhesive force between the heat sink and the mounting board is obtained, even when it is incorporated into a small electronic device and dropped, The heat sink does not peel off from the mounting board.
本発明のヒートシンク用表面処理Ａｌ板は、Ａｌ基板表面に置換めっきによりＺｎ層を形成させ、その上にＮｉ層、またはＮｉ層とＳｎ層をめっきにより形成させてなり、軽量で熱伝導性が大きく、かつハンダ付けが可能であるため、実装基板の銅箔からなる回路上などにクリームハンダを用いてリフロー付けすることにより、小型の電子機器用のヒートシンクとして好適に適用できる。また、クリームハンダを用いてリフロー付けすることができるので、半導体チップなどの実装部品とともに、同時に実装基板の回路上などに接着することが可能であり、工程を節減できる。さらに、接着剤を用いず溶融したハンダで接着するので、強固な接着状態が得られ、小型電子機器などに組み込まれて落下した場合でも、実装基板から剥離脱落することがなく、またさらに、樹脂層が介在しない金属同士による接着であるので、熱伝導性も殆ど低下することがなく、優れた放熱性を具備している。 The surface-treated Al plate for heat sink of the present invention is formed by forming a Zn layer on the surface of the Al substrate by displacement plating, and forming a Ni layer or Ni layer and Sn layer thereon by plating. Since it is large and can be soldered, it can be suitably applied as a heat sink for a small electronic device by reflow soldering on a circuit made of copper foil of a mounting board using a cream solder. In addition, since reflow soldering can be performed using cream solder, it is possible to simultaneously bond onto a mounting substrate circuit together with a mounting component such as a semiconductor chip, and the process can be saved. In addition, since it is bonded with molten solder without using an adhesive, a strong bonded state can be obtained, and even if it is dropped in a small electronic device, it does not peel off from the mounting substrate, and furthermore, it is resin. Since the bonding is performed between metals without intervening layers, the thermal conductivity hardly deteriorates and has excellent heat dissipation.
１ ： ヒートシンク
２ ： 実装基板
２ａ ： 回路部分
３ ： 電子部品
４ ： ハンダ
５ ： 接着剤
1: Heat sink 2: Mounting board 2a: Circuit part 3: Electronic component 4: Solder 5: Adhesive
Claims (10)
A mounting component, wherein the heat sink according to any one of claims 6 to 9 is reflow soldered to a mounting substrate.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100947626B1 (en) | 2008-01-08 | 2010-03-15 | 솅 팡 유안 테크놀로지 컴퍼니., 리미티드 | Method of making a cold plate for a printed circuit board |
| KR101054842B1 (en) | 2011-03-17 | 2011-08-05 | 조인셋 주식회사 | Thermal spread chip heat sink |
| JP2012094594A (en) * | 2010-10-25 | 2012-05-17 | Toshiyuki Arai | Heat dissipation structure |
| WO2017105034A1 (en) * | 2015-12-18 | 2017-06-22 | 주식회사 엘지화학 | Printed circuit board heat dissipation system using highly conductive heat dissipation pad |
-
2004
- 2004-05-18 JP JP2004147184A patent/JP4409356B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100947626B1 (en) | 2008-01-08 | 2010-03-15 | 솅 팡 유안 테크놀로지 컴퍼니., 리미티드 | Method of making a cold plate for a printed circuit board |
| JP2012094594A (en) * | 2010-10-25 | 2012-05-17 | Toshiyuki Arai | Heat dissipation structure |
| KR101054842B1 (en) | 2011-03-17 | 2011-08-05 | 조인셋 주식회사 | Thermal spread chip heat sink |
| WO2017105034A1 (en) * | 2015-12-18 | 2017-06-22 | 주식회사 엘지화학 | Printed circuit board heat dissipation system using highly conductive heat dissipation pad |
| US10314159B2 (en) | 2015-12-18 | 2019-06-04 | Lg Chem, Ltd. | Printed circuit board heat dissipation system using highly conductive heat dissipation pad |
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