JP2005322296A5 - - Google Patents
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- Publication number
- JP2005322296A5 JP2005322296A5 JP2004138417A JP2004138417A JP2005322296A5 JP 2005322296 A5 JP2005322296 A5 JP 2005322296A5 JP 2004138417 A JP2004138417 A JP 2004138417A JP 2004138417 A JP2004138417 A JP 2004138417A JP 2005322296 A5 JP2005322296 A5 JP 2005322296A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004138417A JP4484577B2 (ja) | 2004-05-07 | 2004-05-07 | 半導体記憶装置及びその制御方法 |
| US11/104,602 US7154787B2 (en) | 2004-05-07 | 2005-04-13 | Semiconductor memory and control method thereof allowing high degree of accuracy in verify operation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004138417A JP4484577B2 (ja) | 2004-05-07 | 2004-05-07 | 半導体記憶装置及びその制御方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005322296A JP2005322296A (ja) | 2005-11-17 |
| JP2005322296A5 true JP2005322296A5 (enExample) | 2007-06-14 |
| JP4484577B2 JP4484577B2 (ja) | 2010-06-16 |
Family
ID=35239266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004138417A Expired - Fee Related JP4484577B2 (ja) | 2004-05-07 | 2004-05-07 | 半導体記憶装置及びその制御方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7154787B2 (enExample) |
| JP (1) | JP4484577B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008047189A (ja) | 2006-08-11 | 2008-02-28 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| KR100826653B1 (ko) * | 2007-04-06 | 2008-05-06 | 주식회사 하이닉스반도체 | 낸드 플래시 메모리소자의 소거검증 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2634089B2 (ja) | 1990-10-22 | 1997-07-23 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
| JPH0628875A (ja) * | 1992-07-10 | 1994-02-04 | Sony Corp | フラッシュ型ｅ２ ｐｒｏｍの消去方法 |
| JPH06290591A (ja) * | 1993-03-31 | 1994-10-18 | Sony Corp | 半導体不揮発性記憶装置 |
| KR100248868B1 (ko) * | 1996-12-14 | 2000-03-15 | 윤종용 | 플래시 불휘발성 반도체 메모리 장치 및 그 장치의 동작 모드 제어 방법 |
| JP3990485B2 (ja) | 1997-12-26 | 2007-10-10 | 株式会社ルネサステクノロジ | 半導体不揮発性記憶装置 |
| JP3999900B2 (ja) * | 1998-09-10 | 2007-10-31 | 株式会社東芝 | 不揮発性半導体メモリ |
| JP4434405B2 (ja) * | 2000-01-27 | 2010-03-17 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
| JP4084922B2 (ja) * | 2000-12-22 | 2008-04-30 | 株式会社ルネサステクノロジ | 不揮発性記憶装置の書込み方法 |
| JP2003077282A (ja) * | 2001-08-31 | 2003-03-14 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
| US6989562B2 (en) * | 2003-04-04 | 2006-01-24 | Catalyst Semiconductor, Inc. | Non-volatile memory integrated circuit |
| JP4494820B2 (ja) * | 2004-02-16 | 2010-06-30 | パナソニック株式会社 | 不揮発性半導体記憶装置 |
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2004
- 2004-05-07 JP JP2004138417A patent/JP4484577B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-13 US US11/104,602 patent/US7154787B2/en not_active Expired - Lifetime