JP2005311241A5 - - Google Patents
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- JP2005311241A5 JP2005311241A5 JP2004129648A JP2004129648A JP2005311241A5 JP 2005311241 A5 JP2005311241 A5 JP 2005311241A5 JP 2004129648 A JP2004129648 A JP 2004129648A JP 2004129648 A JP2004129648 A JP 2004129648A JP 2005311241 A5 JP2005311241 A5 JP 2005311241A5
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- JP
- Japan
- Prior art keywords
- thin film
- poly
- composite thin
- alkylthiophene
- carbon nanotube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (6)
- カーボンナノチューブとポリ−3−アルキルチオフェンを有する複合体薄膜であり、該複合体薄膜にX線を一定の入射角で入射し、入射方向と反射方向とを含む面に垂直方向な面内で回折角を変えながらX線回折強度を測定する測定方法を用いて測定したときの、ポリ−3−アルキルチオフェンの(100)結晶面からの回折強度I100と(010)結晶面からの回折強度I010との強度比I100/I010が2.0以下である複合体薄膜。
- 前記複合体薄膜が有するカーボンナノチューブの含有量がポリ−3−アルキルチオフェンの重量に対して、1重量%以下である請求項1記載の複合体薄膜。
- ポリ−3−アルキルチオフェンがポリ−3−ブチルチオフェンまたはポリ−3−ヘキシルチオフェンの少なくとも1種である請求項1記載の複合体薄膜。
- カーボンナノチューブが単層カーボンナノチューブである請求項1記載の複合体薄膜。
- 請求項1〜4のいずれか記載の複合体薄膜を有する半導体素子。
- 請求項1〜4のいずれか記載の複合体薄膜を半導体層として有する電界効果型トランジスタ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004129648A JP4736346B2 (ja) | 2004-04-26 | 2004-04-26 | 複合体薄膜を半導体層として有する電界効果型トランジスタ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004129648A JP4736346B2 (ja) | 2004-04-26 | 2004-04-26 | 複合体薄膜を半導体層として有する電界効果型トランジスタ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005311241A JP2005311241A (ja) | 2005-11-04 |
JP2005311241A5 true JP2005311241A5 (ja) | 2007-06-14 |
JP4736346B2 JP4736346B2 (ja) | 2011-07-27 |
Family
ID=35439618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004129648A Expired - Fee Related JP4736346B2 (ja) | 2004-04-26 | 2004-04-26 | 複合体薄膜を半導体層として有する電界効果型トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4736346B2 (ja) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5061414B2 (ja) * | 2001-09-27 | 2012-10-31 | 東レ株式会社 | 薄膜トランジスタ素子 |
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2004
- 2004-04-26 JP JP2004129648A patent/JP4736346B2/ja not_active Expired - Fee Related
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