JP2005311241A5 - - Google Patents

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Publication number
JP2005311241A5
JP2005311241A5 JP2004129648A JP2004129648A JP2005311241A5 JP 2005311241 A5 JP2005311241 A5 JP 2005311241A5 JP 2004129648 A JP2004129648 A JP 2004129648A JP 2004129648 A JP2004129648 A JP 2004129648A JP 2005311241 A5 JP2005311241 A5 JP 2005311241A5
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JP
Japan
Prior art keywords
thin film
poly
composite thin
alkylthiophene
carbon nanotube
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JP2004129648A
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JP2005311241A (ja
JP4736346B2 (ja
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Priority to JP2004129648A priority Critical patent/JP4736346B2/ja
Priority claimed from JP2004129648A external-priority patent/JP4736346B2/ja
Publication of JP2005311241A publication Critical patent/JP2005311241A/ja
Publication of JP2005311241A5 publication Critical patent/JP2005311241A5/ja
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Publication of JP4736346B2 publication Critical patent/JP4736346B2/ja
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Claims (6)

  1. カーボンナノチューブとポリ−3−アルキルチオフェンを有する複合体薄膜であり、該複合体薄膜にX線を一定の入射角で入射し、入射方向と反射方向とを含む面に垂直方向な面内で回折角を変えながらX線回折強度を測定する測定方法を用いて測定したときの、ポリ−3−アルキルチオフェンの(100)結晶面からの回折強度I100と(010)結晶面からの回折強度I010との強度比I100/I010が2.0以下である複合体薄膜
  2. 前記複合体薄膜が有するカーボンナノチューブの含有量がポリ−3−アルキルチオフェンの重量に対して、1重量%以下である請求項1記載の複合体薄膜
  3. ポリ−3−アルキルチオフェンがポリ−3−ブチルチオフェンまたはポリ−3−ヘキシルチオフェンの少なくとも1種である請求項1記載の複合体薄膜
  4. カーボンナノチューブが単層カーボンナノチューブである請求項1記載の複合体薄膜
  5. 請求項1〜4のいずれか記載の複合体薄膜を有する半導体素子。
  6. 請求項1〜4のいずれか記載の複合体薄膜を半導体層として有する電界効果型トランジスタ。
JP2004129648A 2004-04-26 2004-04-26 複合体薄膜を半導体層として有する電界効果型トランジスタ Expired - Fee Related JP4736346B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004129648A JP4736346B2 (ja) 2004-04-26 2004-04-26 複合体薄膜を半導体層として有する電界効果型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004129648A JP4736346B2 (ja) 2004-04-26 2004-04-26 複合体薄膜を半導体層として有する電界効果型トランジスタ

Publications (3)

Publication Number Publication Date
JP2005311241A JP2005311241A (ja) 2005-11-04
JP2005311241A5 true JP2005311241A5 (ja) 2007-06-14
JP4736346B2 JP4736346B2 (ja) 2011-07-27

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Family Applications (1)

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JP2004129648A Expired - Fee Related JP4736346B2 (ja) 2004-04-26 2004-04-26 複合体薄膜を半導体層として有する電界効果型トランジスタ

Country Status (1)

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JP (1) JP4736346B2 (ja)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5061414B2 (ja) * 2001-09-27 2012-10-31 東レ株式会社 薄膜トランジスタ素子

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