JP2005310928A5 - - Google Patents

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Publication number
JP2005310928A5
JP2005310928A5 JP2004123644A JP2004123644A JP2005310928A5 JP 2005310928 A5 JP2005310928 A5 JP 2005310928A5 JP 2004123644 A JP2004123644 A JP 2004123644A JP 2004123644 A JP2004123644 A JP 2004123644A JP 2005310928 A5 JP2005310928 A5 JP 2005310928A5
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JP
Japan
Prior art keywords
nitride semiconductor
substrate
layer
region
semiconductor laser
Prior art date
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Application number
JP2004123644A
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English (en)
Japanese (ja)
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JP4953559B2 (ja
JP2005310928A (ja
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Priority to JP2004123644A priority Critical patent/JP4953559B2/ja
Priority claimed from JP2004123644A external-priority patent/JP4953559B2/ja
Publication of JP2005310928A publication Critical patent/JP2005310928A/ja
Publication of JP2005310928A5 publication Critical patent/JP2005310928A5/ja
Application granted granted Critical
Publication of JP4953559B2 publication Critical patent/JP4953559B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004123644A 2004-04-20 2004-04-20 窒化物半導体レーザ素子 Expired - Fee Related JP4953559B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004123644A JP4953559B2 (ja) 2004-04-20 2004-04-20 窒化物半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004123644A JP4953559B2 (ja) 2004-04-20 2004-04-20 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2005310928A JP2005310928A (ja) 2005-11-04
JP2005310928A5 true JP2005310928A5 (enExample) 2007-05-24
JP4953559B2 JP4953559B2 (ja) 2012-06-13

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ID=35439367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004123644A Expired - Fee Related JP4953559B2 (ja) 2004-04-20 2004-04-20 窒化物半導体レーザ素子

Country Status (1)

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JP (1) JP4953559B2 (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4388720B2 (ja) * 2001-10-12 2009-12-24 住友電気工業株式会社 半導体発光素子の製造方法

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