JP2005303116A - Optical module and method for manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical module in which all bump electrodes can be freely wired on the backside or surface of a chip even in the case of a compound semiconductor. <P>SOLUTION: As the basic configuration of an optical component 25, the optical component 25 is constituted of coupling a semiconductor chip 2 of a light emitting/receiving element only with a structure 1, and a light emitting/receiving part 5 in the semiconductor chip 2 of the light emitting/receiving element is covered with a plate 11 of the structure 1 so as to be protected. An element electrode pad 22 formed on the semiconductor chip 2 of the light emitting/receiving element is bonded with a metal layer 12 formed on the bottom of the plate 11 of the structure 1 to draw it out, and the semiconductor chip 2 of the light emitting/receiving element is fixed on the plate 11 by the junction point. The optical path 33 of the light emitting/receiving part 5 is transformed into an optical path 33 parallel with the surface of the semiconductor chip 2 of the light emitting/receiving element by a concave mirror 6 formed on the slant surface 15 of the plate 11 to obtain the optical component 25. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention mainly relates to an optical component formed by bonding a structure to a semiconductor chip of a light emitting / receiving element in which light emitting / receiving portions are arranged.

  In the optical module, the alignment accuracy for optically coupling the light emitting / receiving portion of the semiconductor chip of the light emitting / receiving element and the optical transmission path is required to be 1 μm or less when the optical transmission path is a single mode optical waveguide. Yes.

  In order to relax this alignment accuracy, an optical component is formed by combining a semiconductor chip of a light emitting / receiving element and a structure having an optical system, and a large parallel is formed between the optical component and the optical transmission path on the mounting substrate. It is necessary to construct an optical module formed by coupling with light.

  This is because the alignment error between the optical component and the optical transmission path is allowed to be a fraction of the thickness of the parallel light. For this purpose, it is necessary to convert the spread light from the light receiving / emitting part of the semiconductor chip of the light receiving / emitting element into parallel light by the optical system of the structure and to emit it from the optical component.

  On the other hand, the optical path of the light emitting / receiving unit is perpendicular to the chip surface in the photodiode, and the optical path of the surface emitting laser (VCSEL) is also perpendicular to the chip surface. Therefore, in flip chip mounting, in which the semiconductor chip of the light emitting / receiving element is mounted in parallel to the mounting substrate, the direction of the optical path that makes the optical path of the light receiving / emitting section parallel to the mounting substrate as an optical system of the structure and the creation of thick parallel light A concave mirror is required to be performed simultaneously.

  A conventional structure for optically coupling a light emitting / receiving portion of a semiconductor chip of a light emitting / receiving element and an optical transmission path of a mounting substrate using a concave mirror of a structure is disclosed in Patent Document 1 as a first conventional example. Yes.

  In the first conventional example, as shown in FIG. 8, a semiconductor chip 2 of a light receiving and emitting element having only one light emitting and receiving part is formed by injection molding of a thermoplastic resin such as PMMA (methyl methacrylate resin) or polycarbonate, and a concave mirror. 6 is formed in alignment with the structure 1, and the light from the optical transmission path 29 of POF (plastic optical fiber) or PCF (polymer clad optical fiber) having a core diameter of 200 μm to about 1 mm is received by the concave mirror 6. The light is collected and condensed on the light receiving / emitting portion of the semiconductor chip 2 of the light receiving / emitting element.

  The second conventional example is disclosed in Patent Document 2, and as shown in FIG. 9, the structure 1 in which the concave mirror 6 is formed on the surface of the mounting substrate 27 by gold bonding by ultrasonic thermocompression bonding is installed. Then, the semiconductor chip 2 of the light receiving / emitting element is flip-chip mounted above the structure 1, and the optical path 33 of the light receiving / emitting part 5 of the semiconductor chip 2 of the light receiving / emitting element is folded at a right angle by the concave mirror 6. The light is converted into a parallel optical path 33 and is incident on an optical transmission path 29 which is an optical waveguide installed on the mounting substrate.

  A third conventional example is disclosed in Patent Document 3, and as shown in FIG. 10, a semiconductor chip 2 of a light emitting / receiving element such as a VCSEL on a GaAs substrate, an optical waveguide layer thereon, The structure 1 composed of the optical filter on the inclined surface of the optical waveguide layer is formed in a lump, and then the individual optical components 25 composed of the semiconductor chip 2 of the light emitting / receiving element having only one light emitting / receiving section and the structure 1 are formed. Each optical component 25 is formed on a mounting substrate 27, and then an optical transmission path 29 of an optical waveguide that is optically coupled to the optical component 25 is formed on the mounting substrate 27.

  Further, a fourth conventional example is disclosed in Patent Document 4, and as shown in FIG. 11, a semiconductor chip 2 having only one light emitting / receiving unit is disposed on a mounting substrate 27, and an optical path of the light receiving / emitting unit is obtained. Optical structure 25 with a mirror surface is obtained by forming structure 1 in which various curved mirror surfaces are formed on 45-degree inclined surface 6 that converts 33 into a right angle with resin, and it is installed in a sheet-like optical transmission line It is used by optical coupling. The semiconductor chip 2 of the light emitting / receiving element is mounted on the mounting substrate 27 to form a mounting substrate electrode pad 28, and the optical component 25 is electrically connected to another mounting substrate 27 by the mounting substrate electrode pad 28. .

JP 2003-167166 A JP 2002-82244 A JP 2001-274528 A JP 2003-57468 A

  However, these conventional techniques have the following problems.

  In the first conventional example, a POF is used for the optical transmission line 29, and the alignment accuracy of the light receiving / emitting part, the concave mirror 6 of the structure 1 and the optical transmission line 29 is reduced to reduce the manufacturing cost. It is recommended to increase the diameter of the POF core from 200 μm to about 1 mm. However, since the core diameter of the POF is increased, the bending radius of curvature, which is the minimum necessary for the POF to be able to transmit light, becomes large. When the POF is bent sharply, the optical transmission within the POF is reduced. There is a problem that becomes difficult.

  Further, in the second conventional example, there is a problem that the alignment cost is expensive because it is necessary to align and bond the semiconductor chip 2 of the light emitting / receiving element and the structure 1 to the mounting substrate 27 with high accuracy. Further, since it is necessary to bond the structure 1 to the mounting substrate 27 at a high temperature, there is a problem that the mounting substrate 27 is limited to a material that can withstand the high temperature. Further, there is a risk that the light emitting / receiving unit 5 may be damaged when the light receiving / emitting unit 5 of the semiconductor chip 2 of the light receiving / emitting element collides with the structure 1.

  Further, the third conventional example has a problem that the mounting cost is high because the optical component 25 is installed in the optical transmission path 29 of the mounting substrate 27 with high alignment accuracy.

  Further, in the fourth conventional example, since the semiconductor chip of the light receiving and emitting element is integrated with the mounting substrate, the light in the optical path that is converted by the optical system of the structure and is emitted from the optical component is not a parallel light flux, If the optical transmission line is transmitted, the light intensity becomes weaker as the transmission distance becomes longer.

  Further, in this optical component 25, since the mounting substrate electrode pad 28 is formed by installing the semiconductor chip 2 of the light receiving and emitting element on the mounting substrate 27, the optical component 25 becomes larger due to the thickness of the mounting substrate 27, and the optical component 25. There is a problem that a large space is required to install.

  When the optical component 25 is a surface emitting laser formed on a compound semiconductor chip, conventionally, the electrode of the optical component 25 is divided into a light emitting surface side and a back surface side of the semiconductor chip 2 of the light receiving and emitting element. The surface-emitting laser in which all the electrodes are formed on the back surface of the semiconductor chip 2 of the light emitting / receiving element is formed in two ways, i.e., all the electrodes are formed on the light emitting surface side of the semiconductor chip 2 of the light receiving / emitting element. It was not commercialized. This is because it is difficult for a compound semiconductor to open a hole penetrating the front and back of the semiconductor chip 2 of the light emitting / receiving element.

  For this reason, conventionally, in order to increase the degree of freedom of mounting of the compound semiconductor laser, it has been desired that all electrodes can be wired on the back surface of the chip at a low cost.

  Accordingly, the present invention has been made in view of the above-described problems of the prior art, and a first object of the present invention is to connect the front and back surfaces of a semiconductor chip of a light emitting / receiving element in a chip-sized optical component. In other words, all the bump electrodes can be freely wired on the back surface or the front surface of the chip even if it is a compound semiconductor.

  The second object of the present invention is to reduce the light intensity transmitted to the optical transmission line by making the emitted light from the optical component parallel light, and to reduce the manufacturing cost of the optical component and the mounting of the optical component on the mounting substrate. It is to reduce the cost.

  A third object of the present invention is to provide an optical module in which the light receiving / emitting part of the semiconductor chip of the light receiving / emitting element is less likely to be damaged and damaged by foreign matter.

Therefore, the optical module of the present invention has a metal layer formed on at least one surface and a flat plate portion formed flat on the other surface, and an electrode portion is formed on the metal layer on one surface of the flat plate portion, By having a semiconductor chip of a light emitting / receiving element having a light emitting / receiving portion and an element electrode pad on one surface and having an element electrode on the other surface, and connecting the electrode portion to the element electrode pad, An optical component formed by bonding a semiconductor chip of the light emitting / receiving element, an inclined surface having an inclination of a predetermined angle with respect to one surface of the semiconductor chip of the light receiving / emitting element above the light receiving / emitting part of the flat plate portion The inclined surface covers the upper surface of the light emitting / receiving unit, a concave mirror is formed on the metal layer of the inclined surface, and the optical path of the light receiving / emitting unit of the semiconductor chip is bent by the concave mirror into an optical path parallel to the surface of the semiconductor chip Has a structure,
An electrode metal spacer is arranged side by side on the side surface of the semiconductor chip, a first bump electrode is installed on the electrode metal spacer, and an electrode pad drawn from the semiconductor chip surface on the same side as the first bump electrode is provided. Install the second bump electrode,
The optical component is connected to a mounting substrate having an optical transmission line and an electric wiring pattern via the first and second bump electrodes.

  In addition, the electrode portion is formed in a recess formed on one surface of the flat plate portion, and the electrode portion is welded to the element electrode pad with a welding material, thereby bringing the flat plate portion and the semiconductor chip into close contact with each other. Features.

  Further, by dividing the arrangement of the semiconductor chips and the arrangement of the structures composed of the flat plate portions and the electrode metal spacers into a plurality of pieces in a state where the electrode portions are connected to the element electrode pads, An optical component comprising a semiconductor chip and a structure is formed.

  Further, the other flat surface of the flat plate portion covers the entire surface of the semiconductor chip, and a vector projected onto the semiconductor chip surface of the light emitting / receiving element of the normal vector of the inclined surface from the concave mirror on one surface of the flat plate portion. It has the recessed part for cavities which penetrates to the edge part of a flat plate part in this direction.

  In addition, the cavity recess has an end portion of a flat plate portion projecting from the region where the semiconductor chip of the light emitting / receiving element is projected, and the inner diameter of the cavity recess is substantially the same as the outer diameter of the optical transmission line It is characterized by being formed in size.

Furthermore, the manufacturing method of the optical module of the present invention provides a holding substrate on which a plurality of structures are installed,
Welding material is installed on each electrode part of the array of multiple structures installed on the holding substrate,
The position of the welding material is collectively set up on the element electrode pad group of the array of semiconductor chips of the light receiving and emitting elements, and the arrangement of the structures is installed.
The welding material is heated to a temperature higher than the melting point and remelted, the welding material is spread between the electrode portion of the flat plate portion and the element electrode pad of the semiconductor chip, and the surface tension of the molten welding material causes the element electrode pad of the semiconductor chip to Align the position of the electrode part of the flat plate part of the structure to the position of the front and rear, left and right,
By cooling and solidifying the welding material, the array of structures and the array of semiconductor chips are joined, and then the holding substrate is removed from the structure,
Place side by side electrode metal spacers on the side of the semiconductor chip, electrically connect the front and back of the semiconductor chip,
A first bump electrode is disposed on the electrode metal spacer, and a second bump electrode is disposed on an electrode pad drawn from the semiconductor chip surface on the same surface side as the first bump electrode, whereby the first and second bump electrodes are disposed. The second bump electrode is drawn out and installed on the same side of the semiconductor chip,
A plurality of optical components are formed by dividing an array obtained by combining the array of the semiconductor chips and the array of the plurality of structures.
An optical module is manufactured by installing the optical component on a mounting substrate having an optical transmission path.

  Thus, in this invention, the structure comprised by a flat plate part and an electrode metal spacer is used. That is, a plurality of light receiving and emitting element semiconductor chips are arranged in a small area, and at least the flat plate electrode part having the metal layer on the lower surface is aligned with the element electrode pad.

  The flat plate portion has a plurality of concave mirrors at positions corresponding to the light receiving and emitting portions of the semiconductor chip of the light receiving and emitting element. After manufacturing an array in which the array of structures including the flat plate part is joined to the array of semiconductor chips of the light emitting / receiving elements, it is divided into a plurality of optical components, thereby reducing the alignment cost of each light receiving / emitting part and concave mirror Small optical parts manufactured.

  Then, the optical path of the optical component emitted from or incident on the optical component is aligned with the optical transmission path with a loose alignment accuracy, and placed on the mounting substrate, thereby reducing the mounting cost of the optical component on the mounting substrate.

  The present invention has the following effects.

  In the optical component of the present invention, all the electrodes are formed on one side of the semiconductor chip of the light emitting / receiving element by wiring the front and back using electrode metal spacers arranged on the side surface of the semiconductor chip of the light receiving / emitting element. Even if it exists, all the bump electrodes can be wired at low cost on the back surface and the front surface of the semiconductor chip of the light emitting and receiving element.

  And on the opposite side, a flat plate part with a flat upper surface is installed, so the semiconductor chip of the light emitting / receiving element can be easily mounted without damaging the light emitting / receiving surface by holding the flat surface of the upper surface of the flat plate part with a chip holder Can be installed on the board.

  In addition, a flat plate portion having a metal layer is welded and fixed to the element electrode pad of the semiconductor chip of the light emitting / receiving element, the flat plate portion is electrically connected to the bump electrode by the metal layer, and the inclined surface of the flat plate portion is received. Since the upper part of the light receiving / emitting part of the semiconductor chip of the light emitting element is covered and protected, there is no possibility of foreign matter colliding with the light receiving / emitting part and being damaged.

  Further, the semiconductor chip of the light emitting / receiving element formed by arranging and integrating the light emitting / receiving parts and the flat plate part arranged correspondingly, and facing the light receiving / emitting part of the semiconductor chip of the light emitting / receiving element at about 45 degrees. After aligning flat plates with inclined concave mirrors and combining them together, the array is divided into individual optical components, so the optical components reduce the cost of aligning the individual flat plate portions with the light receiving and emitting portions. Can be manufactured.

  Furthermore, the optical path of the light emitting / receiving portion of the semiconductor chip of the light emitting / receiving element is bent at a right angle with a concave mirror and converted into a thick optical path parallel to the surface of the semiconductor chip of the light receiving / emitting element, and the optical component is aligned with the optical transmission path. Since the optical module installed on the mounting substrate having the above is manufactured, the tolerance for alignment between the optical component and the optical transmission path is loose, and the mounting cost of the optical component to the optical module is reduced.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(First embodiment)
1 to 3 show an optical module manufacturing procedure by a method of joining a semiconductor chip of a light emitting / receiving element in which a one-dimensional array of structures according to the first embodiment of the present invention and a light receiving / emitting section are formed in a one-dimensional array. Indicates.

(Step 1)
As shown in FIG. 1A, a resin mold 4 is prepared by press-pressing the shape of a mold onto a thermoplastic resin such as PMMA or polycarbonate. Alternatively, the resin mold 4 is created by filling the glass mold with an ultraviolet curable resin, curing the resin by irradiating the resin with ultraviolet rays through the glass, and transferring the shape of the glass mold.

  Here, in the resin mold 4, a plurality of structures 1 are formed in a one-dimensional array, and a slope 7 having a concave mirror 6 corresponding to the light emitting / receiving portion 5 of the semiconductor chip 2 of the light emitting / receiving element is formed. A one-dimensional array of the structure 1 types obtained is obtained. When the semiconductor chip 2 of the light emitting / receiving element in which the light emitting / receiving portions 5 are formed in a one-dimensional array is a one-dimensional surface emitting laser array, the pitch of the light emitting / receiving portions 5 is 0.25 mm, and the width in the direction perpendicular thereto is about The resin mold 4 is manufactured in which the molds of the structure 1 having a dimension of about 0.25 mm to 0.5 mm and a thickness of about 0.2 mm are arranged one-dimensionally.

  Further, in the resin mold 4, a recess 8 having a depth of 25 μm and a diameter of about 90 μm is formed on the surface below the inclined surface 7 as a mold of the electrode portion 18 of the structure 1. That is, the periphery of the recess 8 is formed with an outer wall 9 having a height from the recess 8 of about 25 μm and a width of several μm to several tens of μm so that the recess 8 has a depth of 25 μm from the outer wall 9. Form. Moreover, the outer wall 9 forms a part whose height is lower than that of the other top at a part of the top.

(Step 2)
Next, a release agent such as a silicone release agent or a fluorine-based release agent is coated on the surface of the resin mold 4.

(Step 3)
Next, as shown in FIG. 1B, the electrode metal spacers 10 made of gold, copper, nickel or the like having the thickness of the semiconductor chip 2 of the light emitting / receiving element are provided by the number of the light emitting / receiving portions 5 arranged. The light emitting / receiving section 5 is formed in a one-dimensional array, and the upper surface of the light receiving / emitting section 5 is parallel to the predetermined position of the resin mold 4 corresponding to the position of the side surface of the semiconductor chip 2. Is set so as to match the lower surface of the slope 7 of the resin mold 4.

  The thickness of the electrode metal spacer 10 is formed by the thickness of the semiconductor chip 2 of the light emitting / receiving element. The thickness is about 0.05 mm to 0.5 mm, and the width of the electrode metal spacer 10 is set to the bump electrode 24 later. It is formed to have a size of 80 μm or more that can be installed. As an example, the electrode metal spacer 10 is provided with a plurality of electrode metal spacers 10 having a length corresponding to one side of a chip that is later divided into the semiconductor chips 2 of the light receiving and emitting elements.

(Step 4)
Next, as shown in FIG.1 (c), metal, such as gold | metal | money and aluminum, is vapor-deposited at the temperature of 50 degrees C or less on the surface of the resin mold 4 and the surface of the electrode metal spacer 10 of the same height, Electroless metal plating such as gold, copper and nickel is formed on the deposited metal with a thickness of 0.5 μm to 2 μm. Of the metal film formed here, the metal film at the highest position on the top of the outer wall 9 is removed by etching or mechanical polishing. On the other hand, there is a part of the top of the outer wall 9 that is lower than the other tops, but a metal film remains on the part, and the metal film in the recess 8 is formed on the metal film outside the outer wall 9 by the metal film. To be concatenated with.

(Step 5)
Next, the position where the flat plate portion 11 to be formed on the metal film is separated is covered with a plating resist, and the previously formed metal film is used as a plating electrode, and about 10 μm to 20 μm by electroplating gold, copper, nickel or the like. A metal layer 12 having a thickness of 5 mm is formed.

(Step 6)
Next, as shown in FIG. 1 (d), a plating mask plate 13 is installed, and as shown in FIG. 1 (e), electrolytic plating is formed on the metal layer 12 by passing an electric current. As a result, the flat plate portion 11 on which the electroplating is formed with the upper surface aligned to a flat surface having the same height without affecting the height of the upper surface is produced. The thickness of the flat plate portion 11 is about 0.1 mm to 0.3 mm.

  With the above manufacturing method, the flat plate portion 11 formed by metal plating forms the structure 1 integrated with the electrode metal spacer 10. The flat plate portion 11 is formed with a flat upper surface, and the upper surface covers the entire surface of the semiconductor chip 2 of the light emitting / receiving element having the light emitting / receiving portion 5. An inclined surface 15 having an inclination of about 45 degrees facing the position of the light emitting / receiving unit 5 of the semiconductor chip 2 is formed. Further, as will be described later, a cavity recess 14 is formed which penetrates from the concave mirror 6 to the end of the flat plate portion 11 in the direction of the vector projected onto the surface of the semiconductor chip 2 of the light emitting / receiving element having the normal vector of the slope 15. To do.

(Step 7)
Next, as shown in FIG. 2A, the plating mask plate 13 and the plating resist are removed, and a material having a glass transition point of 280 ° C. or lower and a melting point of 300 ° C. or higher of AuSn eutectic solder, for example, polyimide A holding substrate 16 made of PTFE (polytetrafluoroethylene resin), PEEK (polyetheretherketone), liquid crystal polymer, or the like is bonded to the flat plate portion 11 of the structure 1 array.

  Thereafter, the structure 1 bonded to the holding substrate 16 is released from the resin mold 4. Static electricity generated during mold release is removed by blowing ion wind. Here, the release of the structure 1 is performed in a state where the semiconductor chip 2 of the light receiving / emitting element is not present, and therefore, there is an effect that static electricity generated at the time of releasing does not damage the semiconductor chip 2 of the light receiving / emitting element. Next, the 1 μm electroless metal plating remaining on the surface of the structure 1 is removed by quick etching to form a plurality of structures 1 held by the holding substrate 16.

  In this manner, the flat plate portion 11 is formed with the inclined surface 15 having a predetermined angle facing the position of the light emitting / receiving portion 5 of the semiconductor chip 2 of the light emitting / receiving device to be coupled later, and the concave mirror 6 formed there. Here, the predetermined angle of the slope 15 is preferably 30 to 60 degrees, and more preferably about 45 degrees. Furthermore, an electrode portion 18 having a diameter of about 90 μm and a surrounding groove 19 are formed in a recess 17 formed in the metal layer 12 corresponding to the position of the recess 8 of the resin molding 1. Thus, the structure 1 which has the flat plate part 11 and the electrode metal spacer 10 connected to the bottom face is manufactured.

  Here, the shape of the concave portion 17 may be as long as the region where the electrode portion 18 is formed is 25 μm lower than the highest position of the nearby flat plate portion 11, and there may be only a region 25 μm higher in the vicinity. That is, if the highest position of the flat plate portion 11 exists in an island shape separated by, for example, about 100 μm in the three directions of the concave portion 17, the concave portion 17 is provided therebetween.

  As shown in FIG. 3, the other method of manufacturing the concave portion 17 is to form the bottom surface of the flat plate portion 11 flat, and a thermoplastic resin film having high heat resistance such as polyimide or liquid crystal polymer in a region other than the region of the concave portion 17 on the bottom surface. By bonding the insulating film 20 made of the material, a portion without the insulating film 20 can be formed as the recess 17.

  Further, the insulating film 20 is bonded to the semiconductor chip 2 of the light emitting / receiving element when the flat plate portion 11 is later bonded to the semiconductor chip 2 of the light emitting / receiving element, and is insulated during the cooling after the heat treatment. The film 20 contracts, and the insulating film 20 has an effect of attracting the flat plate portion 11 to the semiconductor chip 2 of the light emitting / receiving element and strengthening the bonding between the flat plate portion 11 and the semiconductor chip 2 of the light receiving / emitting device.

  Further, as another manufacturing method of the flat plate portion 11, the following manufacturing method may be used. That is, the metal layer 12 is formed by plating on the bottom surface of the flat plate portion 11 of a previously processed metal lump, silicon substrate, or ceramic substrate, or the metal layer 12 is bonded, welded, and bonded to the structure 1. Form. Then, a flat surface is formed on the upper surface.

  The concave mirror 6 is formed on the inclined surface 15 of the flat plate part 11 by applying ultrasonic vibration to a diamond indenter or other hard material or metal indenter, and heating and pressurizing the inclined surface 15 to form a recess in the concave mirror 6. Form. When the indenter is used, there is an advantage that the concave mirror 6 having a smooth surface shape can be formed in a short time. Further, the groove 19 around the electrode portion 18 may be formed by pressing a sharp blade shape against the metal layer 12 on the bottom surface of the flat plate portion 11. In this way, the structure 1 in which the flat plate portion 11 is integrated with the electrode metal spacer 10 is manufactured.

(Step 8)
Next, as shown in FIG. 2B, a resin having a heat resistance of 300 ° C. or higher, for example, a solder resist material such as PTFE, PEEK, liquid crystal polymer, polyimide, silicone varnish, etc. It is installed by pressing into 19 or by coating, electrodeposition method or the like. Alternatively, an oxide film may be formed on the inner wall of the groove 19 to form a solder resist film.

(Step 9)
Next, the electrode member 18 formed with a diameter of about 90 μm (area is about 6360 square μm) in the concave portion 17 having a depth of about 25 μm of the flat plate portion 11 is used as a welding material 21 with a thickness of about 35 μm and a diameter of A foil of AuSn eutectic solder having an area of about 77 μm (area of about 4660 square μm) is installed by press punching, and a foil having an area of about 73% of the electrode pad is about 1.4 times the depth of the recess 17. Install in.

 That is, the value of the area × thickness of the foil is set to substantially the same value as the area of the electrode portion 18 × the depth of the recess 17. Here, in addition to the press punching method, plating, vapor deposition, sputtering, solder paste printing, and transfer bump method may be used, and the welding material 21 may be made of a material other than AuSn eutectic solder. Alternatively, the flat plate portion 11 may be heated to about 220 ° C., and a gold ball bump may be pressed and joined to the bottom surface of the flat plate portion 11 with an indenter by ultrasonic thermocompression bonding. An insulating film is bonded to a region other than the installation position of the gold ball bump on the bottom surface of the flat plate portion 11.

(Step 10)
Next, as shown in FIGS. 2 (b) to 2 (c), a light emitting / receiving unit 5 such as a VCSEL or a photodiode, having a side of about 80 μm and an area of about 6400 square μm, and device electrodes on the back and front surfaces. Is a semiconductor chip 2 of a light receiving / emitting element formed in a one-dimensional array, and the semiconductor chip 2 of the light receiving / emitting element having a surface element electrode pad 22 approximately the same area as the area of the electrode portion 18 is arranged in a corresponding arrangement. Bonded to a one-dimensional array of structures 1.

  That is, first, the welding material 21 installed on the electrode portions 18 of the array of the structures 1 arranged in a one-dimensional manner on the holding substrate 16 is collected in a lump for the light emitting / receiving element in which the light emitting / receiving portions 5 are formed in a one-dimensional arrangement. A one-dimensional array of the structures 1 is installed on the group of element electrode pads 22 of the semiconductor chip 2 in a temporary manner. Here, the positioning accuracy of the welding material 21 and the element electrode pad 22 does not need to be particularly high, and it is sufficient if the accuracy is within 1/4 of the element electrode pad 22.

(Step 11)
Next, the welding material 21 is heated together with the arrangement of the structures 1 and the holding substrate 16 to 300 ° C., which is higher than the melting point of AuSn, 280 ° C., using a heating stage or an infrared heater. 16 is softened at a temperature equal to or higher than the glass transition point so that the structure 1 mounted thereon can freely move left and right. Then, the welding material 21 that has protruded by about 10 μm from the flat plate portion 11 before melting is remelted to wet the entire surface of the electrode portion 18 of the flat plate portion in the welding material 21, and the element electrode of the semiconductor chip 2 of the light receiving and emitting element The entire surface of the pad 22 is wetted, and the distance between the two is pulled to about 26 μm.

  In this way, the welding material 21 becomes thin and does not protrude from the flat plate portion 11, and the electrode portion 18 of the flat plate portion 11 is positioned at the position of the element electrode pad 22 of the semiconductor chip 2 of the light receiving and emitting element due to the surface tension of the molten welding material 21. The front, back, left and right positions of the are automatically adjusted.

(Step 12)
Next, the welding material 21 is cooled and solidified, and the welding material 21 contracts by cooling and solidification, and the semiconductor chip 2 of the light emitting and receiving element and the structure 1 are brought into close contact with each other. Thereafter, the holding substrate 16 is heated to a temperature not lower than the glass transition point and not higher than 280 ° C. to be softened and removed.

  Further, in the steps so far, the flat plate portion 11 and the electrode metal spacer 10 of the structure 1 are separated, and after the flat plate portion 11 is welded to the semiconductor chip 2 of the light receiving and emitting element, the electrode metal spacer 10 is also attached to the flat plate portion 11. It can also be joined by welding.

  Further, when the welding material 21 is formed by bonding a gold ball bump to the metal layer 12 on the bottom surface of the flat plate portion 11, the flat plate portion 11 and the semiconductor chip 2 of the light emitting / receiving element are heated to about 220 ° C. Then, the gold ball bumps of the flat plate portion 11 are joined to the element electrode pads 22 of the semiconductor chip 2 of the light emitting / receiving element by ultrasonic thermocompression bonding.

(Step 13)
Next, as shown in FIG. 2 (d), a solder resist was printed on the back surface of the semiconductor chip 2 of the light emitting / receiving element and the back surface of the electrode metal spacer 10 in a portion other than the electrode installation region and exposed from the solder resist. An optical component 25 in which bump electrodes 24 such as gold-tin solder bumps and solder balls are installed in the area of the electrode pad 23 in the vicinity of the chip is manufactured, and then a semiconductor of a light emitting / receiving element having one or a plurality of light emitting / receiving portions 5 The chip 2 and the structure 1 are divided into a plurality of optical components 25 combined.

  Next, an example in which the optical component 25 is installed on the mounting substrate 27 and used will be described.

4A and 4B show a method for mounting the optical component 25 on the mounting substrate 27 and a side view of the optical component 25. FIG.

  As shown in FIG. 4A, an optical transmission line 29 such as an optical fiber or an optical waveguide having a core diameter of 50 μm is installed on the mounting substrate 27. The optical transmission path 29 is installed on the spacer 34 installed on the mounting substrate 27. The spacer 34 is installed in order to match the height of the optical transmission path 29 with the optical path 33 according to the thickness of the semiconductor chip 2 of the light emitting / receiving element. The optical component 25 is held on the mounting substrate 27 by a chip holder 26 such as a bonding capillary of a chip bonder or a component adsorber of a component mounter, and the bump electrode 24 is welded to the mounting substrate electrode pad 28 of the mounting substrate 27. This optical component 25 is optically coupled by converting the optical path 33 of the light emitting / receiving section 5 into an optical path 33 of a parallel light flux having a diameter of 50 μm passing through the cavity recess 14 by the concave mirror 6.

  Such a method of use is possible because the light emitting / receiving portion 5 of the semiconductor chip 2 of the light receiving / emitting element is protected by being covered with the flat plate portion 11 of the structure 1, and the upper surface of the flat plate portion 11 is formed flat. This is because. Thus, there is an effect that the light receiving / emitting part 5 of the semiconductor chip 2 of the light receiving / emitting element is less likely to be damaged and damaged by the foreign matter.

  Thus, as shown in FIG. 4B, when the optical path 33 of the parallel light flux having a diameter of 50 μm passing through the cavity recess 14 of the optical component 25 is optically coupled to the core of the optical transmission path 29 having the diameter of 50 μm, Since the positional accuracy of the alignment of the transmission path 29 and the optical component 25 is allowed to be about 10 μm, the installation of the optical component 25 is facilitated, and the alignment cost of the semiconductor chip 2 of the light emitting / receiving element to the optical transmission path 29 is reduced. There is an effect that can be reduced.

  In the present embodiment, the basic structure is such that the electrode metal spacers 10 having the same thickness are arranged side by side on the side surface of the semiconductor chip 2 of the light emitting / receiving element, and the upper surfaces of the semiconductor chip 2 of the light receiving / emitting element and the electrode metal spacer 10 are arranged. The flat plate portion 11 having the metal layer 12 on at least the lower surface is installed, the electrode portion 18 made of the metal layer 12 is formed in the concave portion 17 on the lower surface of the flat plate portion 11, and the electrode portion 18 is welded to the semiconductor chip of the light emitting / receiving element. The flat plate portion 11 and the semiconductor chip 2 of the light emitting / receiving element are bonded to each other by welding to the two element electrode pads 22. The element electrode pad 22 of the semiconductor chip 2 of the light emitting / receiving element is pulled out to the outer surface by bonding to the metal layer 12 on the bottom surface of the flat plate part 11 of the structure 1, and the semiconductor chip 2 of the light receiving / emitting element and the flat plate part 11 are bonded together. It has a role of fixing with points.

  In addition, the electrode metal spacer 10 is welded to the metal layer 12 of the flat plate portion 11 and is electrically connected from the element electrode pad 22 to the electrode metal spacer 10. And while forming the flat surface of the flat plate part 11 flatly, the bump electrode 24 is installed in the lower surface of the semiconductor chip 2 and the electrode metal spacer 10 of a light receiving and emitting element.

  On the flat plate portion 11, an inclined surface 15 having an inclination of about 45 degrees facing the light emitting / receiving portion of the semiconductor chip 2 of the light emitting / receiving element is formed, and the concave mirror 6 is formed on the metal layer 12 formed there. In this way, the optical path 33 of the light receiving and emitting part 5 of the semiconductor chip 2 of the light receiving and emitting element is bent by the concave mirror 6 and converted into an optical path 33 parallel to the surface of the semiconductor chip 2 of the light receiving and emitting element, and for the cavity formed in the flat plate part 11 An optical component 25 that allows the recess 14 to pass therethrough is configured.

  That is, the cavity has a cavity recess 14 penetrating from the concave mirror 6 to the end of the flat plate portion 11 in the direction of the vector projected onto the surface of the semiconductor chip 2 of the light emitting / receiving element having the normal vector of the inclined surface 15. The optical component 25 is installed by holding the upper surface of the flat plate portion 11 with a chip holder 26 and bonding the bump electrodes 24 to the mounting substrate electrode pads 28 of the mounting substrate 27.

  In this way, the electrode metal spacer 10 arranged side by side on the side surface of the semiconductor chip 2 of the light receiving / emitting element electrically connected the front and back of the semiconductor chip 2 of the light receiving / emitting element, and the bump electrode 24 was installed on the electrode metal spacer 10.

  The bump electrode 24 is placed on the near-chip electrode pad 23 drawn out from the semiconductor chip 2 of the light emitting / receiving element on the same side as the bump electrode 24, whereby the two bump electrodes 24 are replaced with the semiconductor chip of the light emitting / receiving element. 2 on the same side. In the present embodiment, the electrodes of the optical component 25 are arranged as a bump electrode 24 installed on the chip vicinity electrode pad 23 on the lower surface of the semiconductor chip 2 of the light receiving and emitting element and a bump electrode 24 on the lower surface of the electrode metal spacer 10. It was.

  Thus, in the chip-sized optical component 25, by using the electrode metal spacer 10 that connects the front surface and the back surface of the semiconductor chip 2 of the light emitting / receiving element, all the bump electrodes 24 can be connected to the light emitting / receiving element even in the case of a compound semiconductor. There is an effect that wiring on the back surface of the semiconductor chip 2 can be performed at low cost.

  The surface on the light receiving / emitting part 5 side of the optical module 3 on the opposite surface is a flat flat surface on which the flat plate part 11 covers the entire surface of the semiconductor chip 2 of the light receiving / emitting element. When the plane is held by the chip holder 26, there is an effect that the semiconductor chip 2 of the light emitting / receiving element can be bonded to the mounting board electrode pad 28 of the mounting board 27 without damaging the light emitting / receiving section 5, and the semiconductor chip of the light receiving / emitting element. 2 is easy to install on the mounting board 27.

  In particular, in the case where the semiconductor chip 2 of the light emitting / receiving element is a surface emitting laser, a device in which the element electrodes are formed separately on the surface and the bottom surface of the semiconductor chip 2 of the light emitting / receiving element can be manufactured at low cost. In the optical component 25 of the embodiment, the electrode on the surface side of the semiconductor chip 2 of the light emitting / receiving element of the surface emitting laser having this structure is connected to the flat plate portion 11, the flat plate portion 11 is connected to the electrode metal spacer 10, and the bottom surface is bumped On the other hand, another bump electrode 24 was placed on the bottom electrode of the semiconductor chip 2 of the light receiving and emitting element.

  As described above, in the present embodiment, even when the semiconductor chip 2 of the light emitting / receiving element is a compound semiconductor, both electrodes of the semiconductor chip 2 of the light receiving / emitting element are formed at a low cost with a chip size not via the mounting substrate 27. There is an effect that it is possible to manufacture the optical component 25 having a structure that is aligned on the bottom side.

  In the present embodiment, when the light emitting / receiving unit 5 emits light, the inclined surface 15 and the concave mirror 6 are inclined by about 45 degrees from the surface of the semiconductor chip 2 of the light emitting / receiving element, so that the upper side of the light emitting / receiving unit 5 is the inclined surface 15. The optical path 33 of the light beam emitted from the light receiving / emitting unit 5 is converted by the concave mirror 6 to obtain an optical path 33 parallel to the surface of the semiconductor chip 2 of the light receiving / emitting element.

  When the light emitting / receiving unit 5 receives light, the inclined surface 15 is formed with an inclination of 30 to 60 degrees with respect to the surface of the semiconductor chip 2 of the light emitting / receiving element, and the upper side of the light emitting / receiving unit 5 is covered with the inclined surface 15. The optical path 33 parallel to the surface of the semiconductor chip 2 of the light emitting / receiving element is converted into an optical path 33 inclined by plus or minus 30 degrees from the direction perpendicular to the surface of the semiconductor chip 2 of the light receiving / emitting element. A light-emitting structure is also possible. In particular, tilting from the vertical direction and making the optical path incident on the light emitting / receiving unit 5 has the effect of avoiding the occurrence of optical noise due to the surface reflection from the light receiving / emitting unit 5 returning to the optical path 33.

  In the optical component 25 of the present embodiment, the optical path 33 of the light receiving / emitting part 5 of the semiconductor chip 2 of the light receiving / emitting element is converted by the concave mirror 6 into an optical path 33 of a relatively thick parallel light flux of about several tens μm to 100 μm. Therefore, an optical transmission line such as a glass optical fiber having a diameter of 125 μm and a core diameter of 10 μm to 60 μm, a POF having a diameter of 0.5 to 1 mm and a core diameter of about 100 μm, or a multimode optical waveguide having a core diameter of about 50 μm. 29 has an effect that optical connection can be made with a small coupling loss.

  In the present embodiment, by shortening the focal length of the concave mirror 6, the luminous flux of the light receiving / emitting unit 5 is converted into the luminous flux that is condensed again by the concave mirror 6, so that the diameter of the single mode optical fiber is about 10 μm. It can also be optically coupled to a core of a small-diameter optical transmission line 29 such as a core, a core having a diameter of several μm of a high Δ optical fiber, or a core of 1 μm or less of an optical waveguide formed by a photonic crystal.

(Second Embodiment)
FIG. 5 shows an optical component manufacturing procedure according to the second embodiment of the present invention.

(Step 1)
As shown in FIG. 5A, a plurality of flat plate portions 11 held by a holding plate 30 and two-dimensionally arranged are manufactured. The two-dimensional arrangement of the flat plate portions 11 is made to correspond to each light emitting / receiving portion 5 of the semiconductor chip 2 of the light emitting / receiving element in which the light emitting / receiving portions 5 are formed in a two-dimensional arrangement. The flat plate portion 11 has an inclined surface 15 of about 45 degrees facing the position of the light emitting / receiving portion 5, a concave mirror 6 formed thereon, a cavity concave portion 14 for guiding the optical path 33 to the concave mirror 6, and an opposite surface. A recess 17 and an electrode portion 18 are formed. Then, an AuSn eutectic solder foil is placed on the electrode portion 18 of the flat plate portion 11. In FIG. 5A, for convenience of explanation, only one of the plurality of flat plate portions 11 is shown.

(Step 2)
The semiconductor chip 2 of the light emitting / receiving element having the light emitting / receiving section 5 formed in a two-dimensional array is held by the holding plate 30, and the semiconductor chip 2 of the light receiving / emitting element is diced in a state of being held by the holding plate 30. A notch that is divided into the semiconductor chip 2 of the light receiving and emitting element for each light receiving and emitting unit 5 is formed.

(Step 3)
Next, the arrangement of the flat plate portions 11 is opposed to the arrangement of the semiconductor chips 2 of the light receiving and emitting elements, and both are joined by a welding material 21 as shown in FIG. Each flat plate portion 11 has a portion protruding from the region of the semiconductor chip 2 of each light emitting / receiving element, as shown in the plan view of FIG.

(Step 4)
Next, as shown in FIG. 5C, the semiconductor chip 2 of the light emitting / receiving element having the two-dimensional array of light emitting / receiving portions 5 is placed together with the holding plate 16 for each one-dimensional array in the vertical array in the figure. To divide.

(Step 5)
Next, the flat plate portion 11 protrudes from the region of the semiconductor chip 2 of the light receiving / emitting element in the one-dimensional array of the separated light receiving / emitting portions 5 to the right side of the figure. The semiconductor chip 2 is disposed on the side surface and welded to the flat plate portion 11 for electrical connection.

(Step 6)
Next, a solder resist is printed on the back surface of the semiconductor chip 2 and the back surface of the electrode metal spacer 10 of the light receiving / emitting element in a one-dimensional array of the light receiving / emitting unit 5 and exposed from the solder resist. A bump electrode 24 such as a gold-tin solder bump or a solder ball is installed in the electrode installation area.

(Step 7)
Next, a one-dimensional array obtained by combining the semiconductor chip 2 of the light-emitting / receiving elements in the one-dimensional array of the light-receiving / emitting unit 5 and the one-dimensional array of the structure 1 is further converted into a light-emitting / emitting element for each individual light-emitting / receiving unit 5. The semiconductor chip 2 is divided into individual optical chips 25.

  In the present embodiment, since the two-dimensional array of the flat plate portions 11 is collectively bonded to the semiconductor chip 2 of the light emitting / receiving element in which the light emitting / receiving units 5 are formed in a two-dimensional array, more semiconductor chips of the light receiving / emitting elements. 2 and the flat plate portion 11 can be manufactured in a lump, so that the manufacturing cost of the individual optical component 25 can be further reduced.

(Third embodiment)
FIG. 6 shows a third embodiment of the present invention.

  In the present embodiment, as in the second embodiment, the two-dimensional array of flat plate portions 11 is collectively bonded to the semiconductor chip 2 of the light emitting / receiving element in which the light emitting / receiving units 5 are formed in a two-dimensional array. This embodiment is different from the second embodiment in that first, each flat plate portion 11 exists within the region of the semiconductor chip 2 of the light emitting / receiving element. Second, the second flat plate portion 31 having a bottom surface formed on a flat plane extending over the entire surface of the semiconductor chip 2 of the light emitting / receiving element is joined to the back surface of the semiconductor chip 2 of the light receiving / emitting element. The electrode metal spacer 10 installed on the side surface of the semiconductor chip 2 of the light emitting / receiving element is electrically connected to the second flat plate portion 31.

  Then, a solder resist surrounding the electrode installation region is printed on the upper surface of the flat plate portion 11 and the upper surface of the electrode metal spacer 10. A solder ball bump electrode 24 is placed on the near-chip electrode pad 32 surrounded by the solder resist on the upper surface of the flat plate portion 11.

  Also in the present embodiment, since the inclined surface 15 of the flat plate portion 11 covers the upper surface of the light emitting / receiving portion 5, there is an effect that the light receiving / emitting portion 5 is not damaged when the flat plate portion 11 side is installed on the mounting substrate 27.

  Eventually, the electrode metal spacer 10 arranged side by side on the side surface of the semiconductor chip 2 of the light emitting / receiving element electrically connected the front and back of the semiconductor chip 2 of the light receiving / emitting element, and the first bump electrode 24 was installed on the electrode metal spacer 10. . Then, the second bump electrode 24 is disposed on the chip vicinity electrode pad 32 drawn from the surface of the semiconductor chip 2 of the light emitting / receiving element on the same side as the first bump electrode 24, that is, on the front side. Thus, both the bump electrodes 24 were drawn to the surface side on the same surface side of the light emitting / receiving section 5 side.

  In addition, the two bump electrodes 24 are arranged on the same surface side of the semiconductor chip 2 of the light emitting / receiving element as described above, and the bottom surface of the second flat plate portion 31 on the opposite surface extends over the entire surface of the semiconductor chip 2 of the light receiving / emitting element. Since it is a flat plane, the optical component 25 of the present embodiment has an effect that its bottom surface can be easily held by the chip holder 26.

  Next, as in the second embodiment, the optical component 25 is manufactured by dividing the semiconductor chip 2 of each light emitting / receiving element.

  In the present embodiment, the optical component 25 is turned upside down in FIG. 6A, and the bump electrode 24 on the upper surface side of the flat plate portion 11 is joined to the mounting substrate electrode pad 28. Here, with respect to the optical transmission path 29, as shown in FIG. 6B, the optical transmission path 29 such as an optical fiber is installed and fixed on the surface of the semiconductor chip 2 of the light receiving and emitting element, thereby fixing the optical path of the optical component 25. The optical module 3 is manufactured by aligning the optical axis of the optical transmission path 29 with 33 and coupling the optical transmission path 29 and the optical component 25 together.

  As another application example of the present embodiment, an optical transmission path 29 is installed on the surface of the mounting substrate 27 without using the spacer 34, and a semiconductor chip of a light receiving and emitting element of the optical component 25 is provided on the optical transmission path 29. The optical module 3 is manufactured by matching the heights of the optical paths of the optical path 25 of the optical component 25 and the optical transmission path 29 by abutting the surface of 2.

  In the present embodiment, since the distance from the surface of the bump electrode 24 to the surface of the semiconductor chip 2 of the light emitting / receiving element is about the size of the optical transmission path 29, the optical transmission path 29 is directly mounted without using the spacer 34. The spacer 34 can be omitted by being installed on the surface of the substrate 27.

(Fourth embodiment)
FIG. 7 shows a fourth embodiment of the present invention.

  This embodiment is different from the previous embodiment in that the cavity recess 14 passes through the optical path 33 extending from the concave mirror 6 of the flat plate portion 11 to the end of the flat plate portion 11 in parallel to the surface of the semiconductor chip 2 of the light receiving and emitting element. Is formed to have substantially the same size as the outer diameter of the optical transmission line 29, such as an optical fiber or an optical waveguide having a core wire outer diameter of 125 μm, and the end of the cavity recess 14 is the semiconductor chip 2 of the light receiving and emitting element. That is, the end of the flat plate portion 11 in which the cavity concave portion 14 is formed is protruded so as to protrude from the existing region.

  In FIG. 7, a cavity recess 14 is provided in a portion of the flat plate portion 11 opposite to the position of the electrode metal spacer 10. The position of the cavity recess 14 of the optical component 25 is aligned with the tip of the optical transmission path 29 installed on the mounting substrate 27, and the bump electrode 24 is melted and bonded to the mounting substrate electrode pad 28 of the mounting substrate 27.

  At this time, the cavity concave portion 14 of the optical component 25 sandwiches the tip of the optical transmission path 29, and the optical module 3 is lowered while the optical component 25 is properly positioned in the horizontal plane so that the position of the optical component 25 matches the position of the optical transmission path 29. Then, the bump electrode 24 is cooled and solidified, and is welded to the mounting board electrode pad 28 of the mounting board 27.

  In this embodiment, the optical transmission path 29 is swallowed into the cavity recess 14 as described above, so that the optical transmission path 29 and the optical component 25 can be accurately aligned.

(a)-(e) is a figure which shows the manufacture procedure of the optical module of the 1st Embodiment of this invention. (a)-(d) is a figure which shows the manufacture procedure of the optical module of the 1st Embodiment of this invention. It is a side view which shows the other example of the optical component of the 1st Embodiment of this invention. It is a side view of the optical module of the 1st Embodiment of this invention. (a)-(c) is a figure which shows the manufacture procedure of the optical module of the 2nd Embodiment of this invention. (a)-(c) is a figure which shows the structure of the optical module of the 3rd Embodiment of this invention. (a) And (b) is a figure which shows the structure of the optical module of the 4th Embodiment of this invention. It is sectional drawing of the 1st prior art example. It is sectional drawing of the 2nd prior art example. It is sectional drawing of a 3rd prior art example. It is sectional drawing of the 4th prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Structure 2 Semiconductor chip of light receiving / emitting element 3 Optical module 4 Resin mold 5 Light receiving / emitting part 6 Concave mirror 7 Slope 8 Recess 9 Outer wall 10 Electrode metal spacer 11 Flat plate 12 Metal layer 13 Plating mask plate 14 Cavity recess 15 Slope 16 Holding substrate 17 Recessed portion 18 Electrode portion 19 Groove 20 Insulating film 21 Welding material 22 Element electrode pad 23 Chip electrode pad 24 Bump electrode 25 Optical component 26 Chip holder 27 Mounting substrate 28 Mounting substrate electrode pad 29 Optical transmission path 30 Holding plate 31 Second flat plate portion 32 Chip vicinity electrode pad 33 Optical path 34 Spacer

Claims (6)

A metal layer formed on at least one surface and a flat plate portion formed flat on the other surface; an electrode portion is formed on the metal layer on one surface of the flat plate portion; A semiconductor chip of a light emitting / receiving element having an electrode pad and an element electrode on the other surface is connected, and the electrode part is connected to the element electrode pad to join the flat plate part and the semiconductor chip of the light receiving / emitting element. An inclined surface having a predetermined angle of inclination with respect to one surface of the semiconductor chip of the light emitting / receiving element is disposed above the light emitting / receiving portion of the flat plate portion, and the inclined surface receives and emits light. A concave mirror is formed on the sloped metal layer, and the optical path of the light receiving and emitting part of the semiconductor chip is bent by the concave mirror into an optical path parallel to the surface of the semiconductor chip,
An electrode metal spacer is arranged side by side on the side surface of the semiconductor chip, a first bump electrode is installed on the electrode metal spacer, and an electrode pad drawn from the semiconductor chip surface on the same side as the first bump electrode is provided. Install the second bump electrode,
An optical module, wherein the optical component is connected to a mounting substrate having an optical transmission line and an electric wiring pattern via the first and second bump electrodes.   The electrode portion is formed in a recess formed on one surface of a flat plate portion, and the electrode portion is welded to the element electrode pad with a welding material, thereby bringing the flat plate portion and the semiconductor chip into close contact with each other. The optical module according to claim 1.   By dividing the arrangement of the semiconductor chips and the arrangement of the structures composed of the flat plate portions and the electrode metal spacers into a plurality of pieces with the electrode portions connected to the element electrode pads, 2. The optical module according to claim 1, wherein an optical component comprising a structure is formed.   The other flat surface of the flat plate portion covers the entire surface of the semiconductor chip, and the direction of the vector projected onto the one surface of the flat plate portion from the concave mirror to the semiconductor chip surface of the light emitting / receiving element of the normal vector of the inclined surface 2. The optical module according to claim 1, further comprising a cavity recess penetrating to an end portion of the flat plate portion.   An end of the cavity recess has a flat plate protrusion that protrudes from the region where the semiconductor chip of the light emitting and receiving element is present, and the inner diameter of the cavity recess is substantially the same as the outer diameter of the optical transmission line. The optical module according to claim 4, wherein the optical module is formed. Prepare a holding substrate with multiple structures installed,
Welding material is installed on each electrode part of the array of multiple structures installed on the holding substrate,
The position of the welding material is collectively set up on the element electrode pad group of the array of semiconductor chips of the light receiving and emitting elements, and the arrangement of the structures is installed.
The welding material is heated to a temperature higher than the melting point and remelted, the welding material is spread between the electrode portion of the flat plate portion and the element electrode pad of the semiconductor chip, and the surface tension of the molten welding material causes the element electrode pad of the semiconductor chip to Align the position of the electrode part of the flat plate part of the structure to the position of the front and rear, left and right,
By cooling and solidifying the welding material, the array of structures and the array of semiconductor chips are joined, and then the holding substrate is removed from the structure,
Place side by side electrode metal spacers on the side of the semiconductor chip, electrically connect the front and back of the semiconductor chip,
A first bump electrode is disposed on the electrode metal spacer, and a second bump electrode is disposed on an electrode pad drawn from the semiconductor chip surface on the same surface side as the first bump electrode, whereby the first and second bump electrodes are disposed. The second bump electrode is drawn out and installed on the same side of the semiconductor chip,
A plurality of optical components are formed by dividing an array obtained by combining the array of the semiconductor chips and the array of the plurality of structures.
An optical module manufacturing method comprising manufacturing the optical module by installing the optical component on a mounting substrate having an optical transmission path.

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