JP2005303032A5 - - Google Patents

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Publication number
JP2005303032A5
JP2005303032A5 JP2004117629A JP2004117629A JP2005303032A5 JP 2005303032 A5 JP2005303032 A5 JP 2005303032A5 JP 2004117629 A JP2004117629 A JP 2004117629A JP 2004117629 A JP2004117629 A JP 2004117629A JP 2005303032 A5 JP2005303032 A5 JP 2005303032A5
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JP
Japan
Prior art keywords
insulating film
semiconductor
semiconductor layer
forming
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004117629A
Other languages
English (en)
Japanese (ja)
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JP2005303032A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004117629A priority Critical patent/JP2005303032A/ja
Priority claimed from JP2004117629A external-priority patent/JP2005303032A/ja
Publication of JP2005303032A publication Critical patent/JP2005303032A/ja
Publication of JP2005303032A5 publication Critical patent/JP2005303032A5/ja
Pending legal-status Critical Current

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JP2004117629A 2004-04-13 2004-04-13 半導体装置の製造方法 Pending JP2005303032A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004117629A JP2005303032A (ja) 2004-04-13 2004-04-13 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004117629A JP2005303032A (ja) 2004-04-13 2004-04-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2005303032A JP2005303032A (ja) 2005-10-27
JP2005303032A5 true JP2005303032A5 (cg-RX-API-DMAC10.html) 2007-05-31

Family

ID=35334169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004117629A Pending JP2005303032A (ja) 2004-04-13 2004-04-13 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2005303032A (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8415765B2 (en) 2009-03-31 2013-04-09 Panasonic Corporation Semiconductor device including a guard ring or an inverted region
CN103299425B (zh) * 2011-01-14 2016-02-24 三菱电机株式会社 半导体装置的制造方法
CN114300348B (zh) * 2021-12-31 2025-07-22 北海惠科半导体科技有限公司 掺杂半导体器件的制备方法及半导体器件
CN114300358B (zh) * 2021-12-31 2025-09-12 北海惠科半导体科技有限公司 二极管的制备方法及半导体器件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168270A (ja) * 1985-01-18 1986-07-29 Nec Kansai Ltd 半導体装置の製造方法
JP2879841B2 (ja) * 1993-10-08 1999-04-05 ローム株式会社 プレーナ型ダイオードの製造方法

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