JP2005302944A - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
JP2005302944A
JP2005302944A JP2004115516A JP2004115516A JP2005302944A JP 2005302944 A JP2005302944 A JP 2005302944A JP 2004115516 A JP2004115516 A JP 2004115516A JP 2004115516 A JP2004115516 A JP 2004115516A JP 2005302944 A JP2005302944 A JP 2005302944A
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
light
resin
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004115516A
Other languages
Japanese (ja)
Inventor
Shigeru Yamazaki
繁 山崎
Takeo Kunimi
武伯 国見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OPTO DEVICE KENKYUSHO KK
Tabuchi Electric Co Ltd
Original Assignee
OPTO DEVICE KENKYUSHO KK
Tabuchi Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OPTO DEVICE KENKYUSHO KK, Tabuchi Electric Co Ltd filed Critical OPTO DEVICE KENKYUSHO KK
Priority to JP2004115516A priority Critical patent/JP2005302944A/en
Publication of JP2005302944A publication Critical patent/JP2005302944A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device where irregular colors on a light emitting observation surface is reduced by suppressing occurrence of color shift, and which is excellent in mass productivity is provided. <P>SOLUTION: A light emitting element 11 is fitted to the fitting part 120 of a lead frame 12a, and covered with a fluorescent substance 16 which absorbs irradiation light from the light emitting element 11 and generates light of a longer wave length than this. The fluorescent substance 17 is covered with a protection layer 22. The dimension ratio of the dimension L1 of the fitting part 120 of the lead frame 12a is 1.5 to 3.5 times as large as the maximum dimension L2 in the view of the plane of the light emitting element 11. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、ＬＥＤディスプレイ、バックライト光源、照光式スイッチ及び各種インジケータ、特殊照明などに利用される発光装置に関し、詳しくは、発光素子からの放射光を波長変換して発光する蛍光体を有する発光装置において、色むらを改善したものである。   The present invention relates to a light emitting device used for an LED display, a backlight light source, an illuminated switch and various indicators, special illumination, and the like, and more specifically, a light emission having a phosphor that emits light by converting the wavelength of light emitted from a light emitting element. In the apparatus, uneven color is improved.

発光ダイオードは、小型で効率が良く鮮やかな色の発光をする。また、半導体素子であるため、球切れなどの心配がなく、駆動特性が優れ、振動やON／OFF 点灯の繰り返しにも強いという特徴を有する。そのため各種インジケータや種々の光源として利用されている。しかし、発光ダイオードは単色性ピーク波長を有するために、白色系などの他の波長を発光することができない。   Light emitting diodes are small, efficient, and emit bright colors. In addition, since it is a semiconductor element, it has the characteristics that there is no fear of ball breakage, excellent driving characteristics, and resistance to vibration and repeated ON / OFF lighting. Therefore, it is used as various indicators and various light sources. However, since the light emitting diode has a monochromatic peak wavelength, it cannot emit other wavelengths such as white.

近年、青色発光ダイオードと蛍光物質により青色発光素子からの放射光の一部を色変換して他の色を発光可能とした発光装置が提供されている。この発光装置によって、青色の発光素子を用いて白色系や黄色など他の発光色を発光させることができるようになる（特許文献１，特許文献２) 。   2. Description of the Related Art In recent years, light emitting devices capable of emitting other colors by color-converting part of emitted light from a blue light emitting element using a blue light emitting diode and a fluorescent material have been provided. With this light emitting device, it becomes possible to emit other light emission colors such as white and yellow using a blue light emitting element (Patent Document 1, Patent Document 2).

具体的には、図７に示すように、２本の第１および第２リードフレーム４２ａ，４２ｂを有し、この一方の第１リードフレーム４２ａの先端に、青色を発光するダイオードからなる発光素子４１を、接着用ペースト４４を介して接着し、発光素子４１上に設けられた２つの電極４５ａ，４５ｂと各リードフレーム４２ａ，４２ｂとを導電性ワイヤーである金線４６ａ，４６ｂを介して電気的に接続する。前記発光素子４１の周囲を、この発光素子４１からの光を吸収して波長変換する蛍光体４７を含有する樹脂４８により被覆する。このとき、青色系の発光素子４１と、その発光を吸収して黄色系を発光する蛍光体４７などを選択することにより、これらの発光の混色を利用して白色系を発光させる。このようにリードフレーム４２ａ上に発光素子４１を取り付けたものを透明エポキシ樹脂からなる保護層４９により全体を覆って製品として完成させる。   Specifically, as shown in FIG. 7, the light emitting element has two first and second lead frames 42a and 42b, and is formed of a diode that emits blue light at the tip of the first lead frame 42a. 41 is bonded via an adhesive paste 44, and the two electrodes 45a and 45b provided on the light emitting element 41 and the lead frames 42a and 42b are electrically connected via gold wires 46a and 46b, which are conductive wires. Connect. The periphery of the light emitting element 41 is covered with a resin 48 containing a phosphor 47 that absorbs light from the light emitting element 41 and converts the wavelength. At this time, by selecting the blue light emitting element 41 and the phosphor 47 that absorbs the light emission and emits yellow light, the white light is emitted using the color mixture of these light emission. In this way, the product in which the light emitting element 41 is mounted on the lead frame 42a is entirely covered with a protective layer 49 made of a transparent epoxy resin to complete a product.

この発光装置は、十分な輝度を有する白色系発光手段として利用できる。また、発光装置の色むらの発生を抑制するために、第１リードフレーム４２ａの先端に凹面部４２ｄが形成された反射枠４２ｃを一体に設け、その凹面部４２ｄの底部に発光素子４１を取り付けて、この発光素子４１の全体を被覆するように蛍光体４７を含有する樹脂４８を凹面部４２ｄに充填させることにより、この樹脂４８を一定の形状に保形することも行われている。
特開平５−１５２６０９号公報 特開平７−９９３４５号公報 This light emitting device can be used as a white light emitting means having sufficient luminance. Further, in order to suppress the occurrence of color unevenness in the light emitting device, a reflection frame 42c having a concave surface portion 42d formed at the tip of the first lead frame 42a is integrally provided, and the light emitting element 41 is attached to the bottom portion of the concave surface portion 42d. In addition, the resin 48 containing the phosphor 47 is filled in the concave surface portion 42d so as to cover the entire light emitting element 41, thereby keeping the resin 48 in a certain shape.
JP-A-5-152609 JP-A-7-99345

しかしながら、上記構成の発光装置は、所望通りの色をむら無く発光させにくい傾向がある。特に、上記したような凹面部を有する反射枠を形成できないパッケージ構造のものにおいては、色むらが発生しやすいものとなる。すなわち、高度な光学系を利用した反射型発光装置のように色むら改善のためにリードフレームに反射枠を形成する事が困難な基本構造の発光装置において、特に問題となる。そして、このような反射型発光装置においては樹脂の被覆厚を一定化する事が難しい。つまり、発光素子は３００μｍ角程度と極めて小さく、発光素子からの光を変換する蛍光体を含有する樹脂も少量であるために、この樹脂の被覆作業が難しくなり、その結果、発光素子に対する樹脂の被覆厚が不均一となって、樹脂中の蛍光体の量が発光素子の周りにおいて不均一となり易い。   However, the light-emitting device having the above-described configuration tends to make it difficult to emit light without unevenness in a desired color. In particular, in the case of a package structure in which a reflection frame having a concave portion as described above cannot be formed, uneven color tends to occur. That is, it becomes a particular problem in a light emitting device having a basic structure in which it is difficult to form a reflection frame on a lead frame in order to improve color unevenness, such as a reflective light emitting device using an advanced optical system. In such a reflective light emitting device, it is difficult to make the resin coating thickness constant. That is, the light-emitting element is as small as about 300 μm square, and the resin containing the phosphor that converts light from the light-emitting element is also small, so that the resin coating operation becomes difficult. The coating thickness is non-uniform, and the amount of phosphor in the resin tends to be non-uniform around the light emitting element.

また、樹脂は硬化するときに粘性が低下し、経時的に自重によって拡がる傾向にあるので、たとえ均一に被覆しても樹脂の形状を安定させることが難しく、発光素子の周りにおける蛍光体の均一性を確保することは困難である。このとき、硬化時における粘性が高いシリコン樹脂やチクソ剤入りのエポキシ樹脂などを使用しても、硬化時に発光素子に配線された金線に沿って樹脂が引きずられるなどして、これに含有する蛍光体の分布量が発光素子に対し部分的に異なるものとなる。このような、発光素子の周りにおける蛍光体の不均一性が色ずれの発生原因となる。   Also, since the viscosity of the resin decreases when it cures and tends to expand due to its own weight over time, it is difficult to stabilize the shape of the resin even if it is uniformly coated, and the phosphor is uniform around the light emitting element. It is difficult to ensure the sex. At this time, even if a silicone resin having a high viscosity at the time of curing or an epoxy resin containing a thixotropic agent is used, the resin is dragged along the gold wire wired to the light emitting element at the time of curing, and contained in this. The distribution amount of the phosphor is partially different from that of the light emitting element. Such non-uniformity of the phosphor around the light emitting element causes a color shift.

特に、発光素子からの光と、その光により励起され、発光素子からの光とは異なる光の混色によって発光色を決める発光装置においては、少しの色ずれが発生しても発光色が大きく異なってしまう。発光素子からの青色と、蛍光体が発光する黄色の二色の混色を用いた白色系の発光装置を量産する場合、二色の発光強度バランスを場所的に一定に保つことは難しく、色ずれの範囲が広くなってしまう傾向にある。そのため所望の色度範囲に形成することが難しく、量産時の歩留まりが低下する。   In particular, in a light-emitting device that determines light emission color by mixing light from a light-emitting element and light that is excited by the light and is different from the light from the light-emitting element, the light emission color differs greatly even if a slight color shift occurs. End up. When mass-producing white light-emitting devices using a mixture of two colors, blue from the light-emitting element and yellow that the phosphor emits, it is difficult to keep the intensity balance of the two colors constant due to color shift. Tend to be widened. Therefore, it is difficult to form in a desired chromaticity range, and the yield during mass production is reduced.

また、リードフレーム上の発光素子の周りに蛍光体を含有する樹脂を被覆し、全体をモールド成形して発光装置としたとき、その発光観測面、すなわち、発光装置における出射面において色ずれが原因で色むらを生じることがある。具体的には、発光観測面側から見て発光素子が配置された中心部が青色っぽく、その周方向にリング状に黄、緑、赤などの色が現れる場合がある。特に、人間の色調感覚は白色において敏感である。そのため、わずかな色調差でも赤っぽい白、緑色っぽい白、黄色っぽい白を識別して色むらが激しいと感じる。このような発光観測面を直視することによって生ずる色むらは、品質上好ましくないばかりでなく、特に照明用光源として用いたときの照射面の色むらは、照明された物体が正しい色として識別されないなどの実用上の問題を生ずることにもなる。   In addition, when a phosphor-containing resin is coated around the light emitting element on the lead frame and the whole is molded to form a light emitting device, color emission is caused on the light emission observation surface, that is, the emission surface of the light emitting device. May cause uneven color. Specifically, when viewed from the light emission observation surface side, the central portion where the light emitting element is arranged is blueish, and colors such as yellow, green, and red may appear in a ring shape in the circumferential direction. In particular, the human color sensation is sensitive in white. Therefore, even with a slight color difference, reddish white, greenish white, and yellowish white are identified and color unevenness is felt intensely. Color unevenness caused by direct viewing of such a light emission observation surface is not only unfavorable in terms of quality, but color unevenness of the irradiated surface particularly when used as a light source for illumination does not identify the illuminated object as a correct color. It may also cause practical problems such as.

本発明者らは、反射枠を形成する事が困難な基本構造の発光装置においても、発光観測面での色むらの発生を抑制できるようにするため、種々の研究実験を重ねた結果、リードフレームの発光素子が取り付けられる取付部の大きさを、発光素子に対し所定の大きさに設定すれば、蛍光体を含有する樹脂は、その表面張力により取付部の縁で流れが制限されて、一定の大きさで所定の形状に保形され、これにより、樹脂に含有する蛍光体を発光素子の周りに均一に分散させ得ることを見出し、本発明を完成するに至った。そこで、本発明は、色ずれの発生を抑制して、発光観測面における色むらが少なく、量産性に優れた発光装置を提供することを目的とする。   The present inventors have conducted various research experiments in order to suppress the occurrence of color unevenness on the light emission observation surface even in a light emitting device having a basic structure in which it is difficult to form a reflection frame. If the size of the attachment part to which the light emitting element of the frame is attached is set to a predetermined size with respect to the light emitting element, the flow of the resin containing the phosphor is restricted at the edge of the attachment part by its surface tension, The present invention has been completed by finding that phosphors contained in a resin can be uniformly dispersed around the light-emitting elements by maintaining a predetermined size and a predetermined shape. Therefore, an object of the present invention is to provide a light emitting device that suppresses the occurrence of color misregistration, has little color unevenness on the light emission observation surface, and is excellent in mass productivity.

上記目的を達成するため、本発明の発光装置は、リードフレームと、前記リードフレームの取付部に取り付けられて単色の放射光を発生するた発光素子と、前記発光素子からの放射光を吸収してこれとは異なる波長の光を発生する蛍光体を樹脂中に分散させてなり前期発光素子を覆う蛍光層と、前記蛍光層を覆う保護層とを備え、前記リードフレームの取付部の寸法が、前記発光素子の平面視における最大寸法に対し１．５〜３．５倍の寸法比率に設定されている。   In order to achieve the above object, a light-emitting device of the present invention absorbs radiation emitted from a lead frame, a light-emitting element that is attached to a mounting portion of the lead frame and generates monochromatic radiation, and light emitted from the light-emitting element. A phosphor that generates light of a wavelength different from the above is dispersed in the resin, and includes a phosphor layer that covers the light emitting element in the previous period, and a protective layer that covers the phosphor layer, and the dimension of the mounting portion of the lead frame is The dimensional ratio is set to 1.5 to 3.5 times the maximum dimension of the light emitting element in plan view.

このように、リードフレームにおける発光素子が取り付けられる取付部の寸法を発光素子の平面視における最大寸法に対し１．５〜３．５倍の寸法比率とすることにより、この取付部の発光素子の周りに蛍光層を被覆したとき、蛍光層の樹脂がその表面張力で取付部の縁で流れが制限されることによって、一定の大きさで、取付部の形状に対応した所定の形状に保形される。この結果、蛍光層中の蛍光体の分布量が発光素子の周りにおいて均一となる。このため、蛍光体からの光は均一な光として外部に発光されて、発光素子からの放射光との混色における色ずれの発生が抑制され、発光観測面における色むらが少なくなる。また、品質（色調）が安定するために、量産時の歩留まりが良好となって量産性にも優れたものとなる。前記リードフレームの取付部の寸法が発光素子に対し１．５倍未満の場合、または３．５倍を越える場合は、蛍光層中の蛍光体の発光素子に対する均一性が損なわれて色むらの発生を招く。この点については、後で詳述する。   Thus, by setting the dimension of the mounting portion to which the light emitting element is attached in the lead frame to a size ratio of 1.5 to 3.5 times the maximum dimension in plan view of the light emitting element, When the fluorescent layer is covered around, the flow of resin in the fluorescent layer is restricted by the surface tension at the edge of the mounting part, so that the shape of the resin is constant and has a predetermined shape corresponding to the shape of the mounting part. Is done. As a result, the distribution amount of the phosphor in the phosphor layer becomes uniform around the light emitting element. For this reason, the light from the phosphor is emitted to the outside as uniform light, the occurrence of color misregistration in color mixing with the emitted light from the light emitting element is suppressed, and the color unevenness on the emission observation surface is reduced. In addition, since the quality (color tone) is stable, the yield during mass production is good and the mass productivity is excellent. When the dimension of the mounting portion of the lead frame is less than 1.5 times that of the light emitting element or more than 3.5 times, the uniformity of the phosphor in the phosphor layer with respect to the light emitting element is impaired, resulting in uneven color. Incurs outbreaks. This point will be described in detail later.

本発明の一実施形態では、前記リードフレームにおける取付部の近傍に、前記発光素子の周囲に充填する蛍光体が流出するのを阻止するストッパ用樹脂を付着させている。この構成によれば、蛍光層は、ストッパ用樹脂により外部に流出するのが阻止されるので、取付部上において蛍光層は確実に保形されて、発光素子の周りにおける蛍光層中の蛍光体の分布量が均一となる。   In one embodiment of the present invention, a stopper resin that prevents the phosphor filling around the light emitting element from flowing out is attached in the vicinity of the mounting portion of the lead frame. According to this configuration, since the fluorescent layer is prevented from flowing out by the stopper resin, the fluorescent layer is reliably retained on the mounting portion, and the phosphor in the fluorescent layer around the light emitting element. The distribution amount of becomes uniform.

本発明の他の実施形態では、前記発光素子が、平面視で矩形であり、平面視で矩形の取付部に取り付けられており、平面視における発光素子の対向する二辺と取付部の対向する二辺とがそれぞれ平行であり、取付部の辺の長さが、これと平行な発光素子の辺の長さに対し１．５〜３．５倍とされている。この構成によれば、一般的な形状である平面視矩形の発光素子に対し、発光素子の周りにおける蛍光層中の蛍光体の分布量を均一化できる。   In another embodiment of the present invention, the light emitting element is rectangular in a plan view, and is attached to a rectangular attachment portion in a plan view, and two opposite sides of the light emitting element in a plan view are opposed to the attachment portion. The two sides are parallel to each other, and the length of the side of the attachment portion is 1.5 to 3.5 times the length of the side of the light emitting element parallel to the two sides. According to this configuration, the distribution amount of the phosphor in the fluorescent layer around the light emitting element can be made uniform with respect to the light emitting element having a rectangular shape in plan view.

本発明のさらに他の実施形態では、前記寸法比率が２．０〜３．０倍とされている。この構成によれば、発光素子の周りにおける蛍光体の分布量をより均一化できる。   In still another embodiment of the present invention, the dimensional ratio is 2.0 to 3.0 times. According to this configuration, the distribution amount of the phosphor around the light emitting element can be made more uniform.

前記蛍光層の樹脂は光硬化性である発光装置。
好ましくは、前記蛍光層の樹脂は粘度が ｃｐｓである。この範囲の粘度であれば、前記樹脂の流れが取付部の縁で効果的に制限される。
本発明の好ましい実施形態では、前記リードフレームの取付部の厚さが０．１５ｍｍ以上である。このようにリードフレームを厚くしておけば、蛍光層の樹脂が取付部の側面を超えて裏面まで濡らすことがないので、取付部の発光表示の周りに被覆された蛍光層が安定化し、その厚みが一定に保持されて、発光観測面における色むらがより少なくなる。
本発明の好ましい実施形態では、さらに、反射凹面を有する凹面体を備え、前記反射凹面に対向して前記発光素子が配置されている。この構成によれば、色むらが少なく、量産性にも優れた反射型の発光装置が得られる。 The light emitting device in which the resin of the fluorescent layer is photocurable.
Preferably, the resin of the fluorescent layer has a viscosity of cps. If it is the viscosity of this range, the flow of the said resin is effectively restrict | limited at the edge of an attaching part.
In preferable embodiment of this invention, the thickness of the attaching part of the said lead frame is 0.15 mm or more. If the lead frame is made thick in this way, the fluorescent layer resin will not get wet beyond the side of the mounting part to the back side, so that the fluorescent layer coated around the light emitting display of the mounting part will be stabilized. The thickness is kept constant, and the color unevenness on the emission observation surface is reduced.
In a preferred embodiment of the present invention, a concave body having a reflective concave surface is further provided, and the light emitting element is arranged to face the reflective concave surface. According to this configuration, a reflective light emitting device with less color unevenness and excellent mass productivity can be obtained.

本発明によれば、色ずれの発生を抑制して、発光観測面における色むらが少なく、量産性にも優れた発光装置を提供できる。   According to the present invention, it is possible to provide a light emitting device that suppresses the occurrence of color misregistration, has little color unevenness on the light emission observation surface, and is excellent in mass productivity.

以下、本発明にかかる発光装置の実施形態を図面に基づいて説明する。図１は本発明の一例として示す反射型装置の縦断面図である。この発光装置は、２本の第１および第２リードフレーム１２ａ，１２ｂを有し、この一方の第１リードフレーム１２ａの先端に一体に形成した取付部１２０の下面側に、発光素子１１がダイボンディングペースト( 接着剤) を介して取り付けられている。また、前記取付部１２０の発光素子１１の周りには、粒子状の蛍光体１６が均一に混合分散された樹脂１７からなる蛍光層１８がほぼ半球状にポッティング技術により被覆されている。前記発光素子１１としては、例えば４００ｎｍ〜５３０ｎｍの主発光ピーク（青色）を有するものが用いられ、また、蛍光体１６としては、発光素子１１からの放射光を吸収して、その主発光ピークの波長とは異なる波長の光、例えば、主発光ピークの波長よりも長波長の光（この例では黄色の光）を発生するものが用いられる。前記発光素子１１は、凹面体２１の底面に形成したほぼ半球状の反射凹面２０と対向するように配置され、この反射凹面２０と前記蛍光層１８の周りに透明なエポキシ樹脂からなる保護層２２が充填されて、この保護層２２により発光素子１１の周り全体を覆う構造とされている   Embodiments of a light emitting device according to the present invention will be described below with reference to the drawings. FIG. 1 is a longitudinal sectional view of a reflection type device shown as an example of the present invention. This light-emitting device has two first and second lead frames 12a and 12b, and the light-emitting element 11 is formed on the lower surface side of the mounting portion 120 formed integrally with the tip of the first lead frame 12a. It is attached via bonding paste (adhesive). Further, around the light emitting element 11 of the mounting portion 120, a fluorescent layer 18 made of a resin 17 in which particulate phosphors 16 are uniformly mixed and dispersed is coated in a substantially hemispherical shape by a potting technique. As the light emitting element 11, for example, one having a main emission peak (blue) of 400 nm to 530 nm is used, and as the phosphor 16, the light emitted from the light emitting element 11 is absorbed and the main emission peak of the phosphor 16 is obtained. For example, light that generates light having a wavelength different from the wavelength, for example, light having a wavelength longer than the wavelength of the main emission peak (yellow light in this example) is used. The light emitting element 11 is disposed so as to face a substantially hemispherical reflective concave surface 20 formed on the bottom surface of the concave body 21, and a protective layer 22 made of a transparent epoxy resin around the reflective concave surface 20 and the fluorescent layer 18. The protective layer 22 covers the entire periphery of the light emitting element 11.

保護層２２の上部はリードフレーム１２ａ，１２ｂの先端部の上側にも存在しており、この先端部を保護層２２中に埋入させた形としている。リードフレーム１２ａ，１２ｂにおける先端部を除いた部分は、凹面体２１の側面と下面に接合されて支持されている。リードフレーム１２ａ，１２ｂの基端部１２２は端子となっており、例えば配線基板の配線パターンに接続される。   The upper portion of the protective layer 22 is also present above the tip portions of the lead frames 12a and 12b, and the tip portion is embedded in the protective layer 22. The portions of the lead frames 12a and 12b excluding the tip are joined to and supported by the side and bottom surfaces of the concave body 21. The base ends 122 of the lead frames 12a and 12b serve as terminals and are connected to, for example, a wiring pattern on a wiring board.

前記発光素子１１からの光と前記蛍光体１６から発光する長波長の光は、前記凹面体２１の反射面２０で反射され、前記保護層２２を通って前記反射面２０とは反対側の放射面２３から外部に向かって放射される。   The light from the light emitting element 11 and the long wavelength light emitted from the phosphor 16 are reflected by the reflecting surface 20 of the concave body 21 and pass through the protective layer 22 to emit radiation on the side opposite to the reflecting surface 20. Radiated from the surface 23 toward the outside.

前記発光素子１１としては、例えば青色を発光する炭化珪素または窒化ガリウムを主成分とするものが用いられる。図２は炭化珪素からなる発光素子１１を用いる場合を示しており、同図の（Ａ）は取付部１２０への発光素子１１の取付部分を示す縦断面図、( Ｂ) はその平面図を示している。第１リードフレーム１２ａ先端の平面視矩形の取付部１２０に取り付けられた平面視矩形の発光素子１１に一つの電極１３ｂを設け、この電極１３ｂと発光素子１１が設けられる第１リードフレーム１２ａに対向配置される第２リードフレーム１２ｂとの間を導電性ワイヤーである１本の金線１４ｂを介して電気的に接続させている。図３の (Ａ), (Ｂ) は窒化ガリウムからなる発光素子１１を用いる場合を示しており、この図では、前記発光素子１１に一対の電極１３ａ，１３ｂを設け、これらと各リードフレーム１２ａ，１２ｂとの間を２本の金線１４ａ，１４ｂを介して電気的に接続させている。各リードフレーム１２ａ，１２ｂとしては、主成分が銅からなる金属板の表面に銀メッキを施したものが好適に用いられる。   As the light emitting element 11, for example, an element mainly composed of silicon carbide or gallium nitride emitting blue light is used. FIG. 2 shows a case where the light emitting element 11 made of silicon carbide is used, in which (A) is a longitudinal sectional view showing a mounting portion of the light emitting element 11 to the mounting portion 120, and (B) is a plan view thereof. Show. One electrode 13b is provided on the light emitting element 11 having a rectangular shape in plan view attached to the mounting portion 120 having a rectangular shape in plan view at the tip of the first lead frame 12a, and this electrode 13b and the first lead frame 12a provided with the light emitting element 11 are opposed to each other. The second lead frame 12b is electrically connected to the second lead frame 12b via a single gold wire 14b which is a conductive wire. 3A and 3B show the case where the light emitting element 11 made of gallium nitride is used. In this figure, the light emitting element 11 is provided with a pair of electrodes 13a and 13b, and these lead frames 12a. , 12b are electrically connected via two gold wires 14a, 14b. As each of the lead frames 12a and 12b, a metal plate whose main component is made of copper with silver plating is preferably used.

図２のように、発光素子１１に設けた一つの電極１３ｃと、この発光素子１１が設けられる第１リードフレーム１２ａと対向状に配置される第２リードフレーム１２ｂとの間を、１本の金線１４ｃを介したワイヤーポンディングにより電気的に接続させる場合は、次のような利点がある。つまり、前記取付部１２０の発光素子１１の周りに被覆される蛍光層１８の樹脂１７は硬化するときに粘性が低下し、このとき発光素子１１に配線された金線に沿って樹脂１７が引きずられる傾向にあるが、１本の金線１４ｃを配線する場合には、図３（Ａ），（Ｂ）に示した２本の金線を配線する場合に比べて、樹脂１７の引きずられ量が少なくなる。特に、２本の金線を配線する場合は、発光素子１１が設けられる第１リードフレーム１２ａの取付部１２０から、これに連続する第１リードフレーム１２ａ側に金線１４ａに沿って樹脂１７が引きずられ易いのに対し、図２（Ａ），（Ｂ）に示した第１リードフレーム１２ａに設けられる発光素子１１と、これと対向状に配置される第２リードフレーム１２ｂとの間に１本の金線１４ｃを配線した場合には、前記取付部１２０から第１リードフレーム１２ａ側への樹脂１７の引きずりがなくなる。このため、樹脂１７の保形性が確保し易くなって、発光素子１１の周りにおける樹脂１７中に含有する蛍光体１６の分布量が均一となり易い。   As shown in FIG. 2, a single electrode 13c provided on the light emitting element 11 and a second lead frame 12b disposed opposite to the first lead frame 12a provided with the light emitting element 11 In the case of being electrically connected by wire bonding via the gold wire 14c, there are the following advantages. That is, the resin 17 of the fluorescent layer 18 coated around the light emitting element 11 of the mounting portion 120 has a reduced viscosity when cured, and at this time, the resin 17 is dragged along the gold wire wired to the light emitting element 11. However, when one gold wire 14c is wired, the amount of dragging of the resin 17 is larger than when two gold wires shown in FIGS. 3 (A) and 3 (B) are wired. Less. In particular, when two gold wires are wired, the resin 17 is disposed along the gold wire 14a from the mounting portion 120 of the first lead frame 12a on which the light emitting element 11 is provided to the first lead frame 12a continuous thereto. While being easily dragged, 1 is provided between the light-emitting element 11 provided on the first lead frame 12a shown in FIGS. 2A and 2B and the second lead frame 12b disposed opposite thereto. When the gold wire 14c is wired, the resin 17 is not dragged from the mounting portion 120 to the first lead frame 12a. For this reason, it becomes easy to ensure the shape retention of the resin 17, and the distribution amount of the phosphor 16 contained in the resin 17 around the light emitting element 11 tends to be uniform.

蛍光層１８中の蛍光体１６としては、前記発光素子２１から放射された光で励起されて発光する無機物質が用いられる。ここで、例えばＹＡＧ( イットリウム・アルミニウム・ガーネット) などのアルミン酸系の蛍光体１６を使用すると、前記発光素子１１からの光で励起されて前記蛍光体１６から、青色よりも波長の長い黄色光を発光するので、この黄色光と前記発光素子１１からの青色光とにより混色された白色光を発光する。このとき、前記蛍光体１６やこれを混入させる樹脂１７の層厚及び発光素子１１の主発光波長などを選択することにより、電球色など任意の色を発光させることができる。発光素子１１が発光する光と、蛍光体１６が発光する色とが補色関係にある場合、混色により白色を発光させることができる。   As the phosphor 16 in the phosphor layer 18, an inorganic substance that is excited by the light emitted from the light emitting element 21 and emits light is used. Here, for example, when an aluminate-based phosphor 16 such as YAG (yttrium, aluminum, garnet) is used, the phosphor 16 is excited by light from the light-emitting element 11 to emit yellow light having a wavelength longer than that of blue. Therefore, white light mixed with the yellow light and the blue light from the light emitting element 11 is emitted. At this time, an arbitrary color such as a light bulb color can be emitted by selecting the layer thickness of the phosphor 16 or the resin 17 into which the phosphor 16 is mixed and the main emission wavelength of the light emitting element 11. When the light emitted from the light emitting element 11 and the color emitted from the phosphor 16 are in a complementary color relationship, white light can be emitted by color mixture.

また、前記蛍光体１６を混合分散させる樹脂１７としては、光硬化型樹脂、例えば、粘度が５０〜４００００ｃｐｓ、より好ましくは、１００〜１２００ｃｐｓのＵＶ硬化型の透明エポキシ樹脂が好適に用いられる。このエポキシ樹脂１７は、後述する特定寸法とされたリードフレーム１２ａの取付部１２０に被覆したとき、表面張力により取付部１２０の縁で流れが制限されて、一定の大きさで取付部１２０の形状に対応した所定の形状に保形される。これにより、発光素子１１の周りに蛍光体１６を均一に分散させることができ、また、前記樹脂１７は紫外線を数秒間照射することにより速やかに硬化させられる。   The resin 17 for mixing and dispersing the phosphor 16 is preferably a photocurable resin, for example, a UV curable transparent epoxy resin having a viscosity of 50 to 40000 cps, more preferably 100 to 1200 cps. When the epoxy resin 17 is coated on the mounting portion 120 of the lead frame 12a having a specific size described later, the flow is restricted by the edge of the mounting portion 120 due to the surface tension, and the shape of the mounting portion 120 is constant. The shape is retained in a predetermined shape corresponding to. Thereby, the fluorescent substance 16 can be uniformly disperse | distributed around the light emitting element 11, and the said resin 17 is hardened rapidly by irradiating an ultraviolet-ray for several seconds.

前記蛍光素子１１を取り付ける第１リードフレーム１２ａは、その先端に設ける平面視矩形の取付部１２０の寸法を、前記発光素子１１の最大寸法に対し１．５〜３．５倍の寸法比率、より好ましくは２．０〜３．０倍の寸法比率とする。図４は前記取付部１２０の部分を拡大して示す平面図である。この実施形態では、平面視正方形の発光素子１１を用い、これに対応して、前記取付部１２０を平面視正方形とし、発光素子１１の４辺Ｓ１〜Ｓ４と取付部１２０の４辺Ｔ１〜Ｔ４とがそれぞれ平行となるように発光素子１１を配置し、この取付部１２０の中央部に発光素子１１を取り付けている。ここで、発光素子１１の平面視とは、発光素子１１である発光ダイオードのｐｎ接合の接合面に直交する方向から見ることをいう。前記取付部１２０の一辺（Ｔ１〜Ｔ４）の長さＬ１は、これと平行な発光素子１１の一辺（Ｓ１〜Ｓ４）の長さＬ２に対し、Ｌ１＝１．５〜３．５Ｌ２、より好ましくはＬ１＝２．０〜３．０Ｌ２となるように設定する。   The first lead frame 12a for attaching the fluorescent element 11 has a size ratio of 1.5 to 3.5 times the maximum dimension of the light emitting element 11 with respect to the dimension of the attachment part 120 having a rectangular shape in plan view provided at the tip thereof. Preferably, the dimensional ratio is 2.0 to 3.0 times. FIG. 4 is an enlarged plan view showing the mounting portion 120. As shown in FIG. In this embodiment, the light emitting element 11 having a square shape in plan view is used, and correspondingly, the mounting portion 120 has a square shape in plan view, and the four sides S1 to S4 of the light emitting element 11 and the four sides T1 to T4 of the mounting portion 120 are. The light emitting elements 11 are arranged so as to be parallel to each other, and the light emitting elements 11 are attached to the central portion of the attaching portion 120. Here, the plan view of the light emitting element 11 means that the light emitting element 11 is viewed from a direction orthogonal to the pn junction surface of the light emitting diode that is the light emitting element 11. The length L1 of one side (T1 to T4) of the mounting portion 120 is more preferably L1 = 1.5 to 3.5L2 with respect to the length L2 of one side (S1 to S4) of the light emitting element 11 parallel thereto. Is set so that L1 = 2.0 to 3.0L2.

このように、第１リードフレーム１２ａにおける発光素子１１が取り付けられる取付部１２０の寸法を、発光素子１１の寸法に対し１．５〜３．５倍の寸法比率とすることにより、この取付部１２０の発光素子１１の周りに蛍光層１８を被覆したとき、図２( Ａ) に示すように、蛍光層１８の樹脂１７がその表面張力で取付部１２０の各辺の縁で流れを停止することによって、一定の大きさで所定の形状に保形される。その結果、樹脂１７中に含有する蛍光体１６の分布量が発光素子１１の周りにおいて均一となる。このため、蛍光体１６からの光は均一な光として外部に発光され、その結果、発光装置の出射面である発光観測面における発光素子１１からの光との混色により得られる色の色むらが抑制される。   As described above, the size of the mounting portion 120 to which the light emitting element 11 is attached in the first lead frame 12 a is 1.5 to 3.5 times the size of the light emitting element 11. When the fluorescent layer 18 is coated around the light emitting element 11, the resin 17 of the fluorescent layer 18 stops flowing at the edge of each side of the mounting portion 120 by its surface tension, as shown in FIG. Thus, the shape is maintained in a predetermined shape with a certain size. As a result, the distribution amount of the phosphor 16 contained in the resin 17 becomes uniform around the light emitting element 11. For this reason, the light from the phosphor 16 is emitted to the outside as uniform light, and as a result, the color unevenness of the color obtained by the color mixture with the light from the light emitting element 11 on the light emission observation surface which is the emission surface of the light emitting device. It is suppressed.

また、発光装置ごとの色調のばらつきが少なくなるので、量産時の歩留まりが良好となって量産性にも優れたものとなる。しかも、前記取付部１２０の発光素子１１の周りに被覆される蛍光体１６を含有する蛍光層１８は、取付部１２０上に一定の大きさで所定の形状に保形されるため、被覆時にポッティング技術に利用することが可能となって量産時に好都合となる。このとき、前記リードフレーム１２ａの取付部１２０と発光素子１１の寸法比率が前記範囲を逸脱すると、次の理由により、樹脂１７に含有する蛍光体１６の発光素子１１に対する均一性が損なわれて、色むらやばらつきの発生を招く。   In addition, since variations in color tone between light emitting devices are reduced, the yield during mass production is good and the mass productivity is excellent. In addition, since the fluorescent layer 18 containing the phosphor 16 coated around the light emitting element 11 of the mounting portion 120 is held in a predetermined shape with a certain size on the mounting portion 120, it is potted at the time of coating. It can be used for technology and is convenient for mass production. At this time, if the dimensional ratio between the mounting portion 120 of the lead frame 12a and the light emitting element 11 deviates from the above range, the uniformity of the phosphor 16 contained in the resin 17 with respect to the light emitting element 11 is impaired due to the following reason. Causes uneven color and variation.

図５の( Ａ) は前記寸法比率が１．５倍未満の場合を示す説明図である。この図のように、１．５倍未満の場合には、被覆される蛍光層１８の発光素子１１の側面での厚みが薄くなりすぎ、発光素子１１の上面における蛍光層１８の厚みとの差が大きくなって色むらが発生し、また発光素子１１の周りにおける蛍光体１６の分布量が不均一となって所望の発光色が得られなくなる。図５の( Ｂ) は前記寸法比率が３．５倍を越えた場合を示す説明図である。この場合、蛍光体１６を含有する蛍光層１８は径時的にリードフレーム１２ａ上に大きく広がるので、放置時間のばらつきなどによって発光素子１１の周りにおける蛍光体１６の分布量が不均一となって、所望の発光色が得られなくなる。   (A) of FIG. 5 is explanatory drawing which shows the case where the said dimension ratio is less than 1.5 times. As shown in this figure, when the ratio is less than 1.5 times, the thickness of the fluorescent layer 18 to be coated on the side surface of the light emitting element 11 becomes too thin, and the difference from the thickness of the fluorescent layer 18 on the upper surface of the light emitting element 11 is different. Becomes larger and color unevenness occurs, and the distribution amount of the phosphor 16 around the light emitting element 11 becomes non-uniform so that a desired light emission color cannot be obtained. FIG. 5B is an explanatory diagram showing a case where the dimensional ratio exceeds 3.5 times. In this case, since the fluorescent layer 18 containing the phosphor 16 spreads over the lead frame 12a with time, the distribution amount of the phosphor 16 around the light emitting element 11 becomes non-uniform due to variations in the standing time. As a result, the desired emission color cannot be obtained.

前記発光素子１１が取り付けられる第１リードフレーム１２ａの取付部１２０は、０．１５ｍｍ以上の板厚とすることが好ましい。このようにすれば、樹脂１７が取付部１２０の側面を超えて裏面まで濡らし、取付部１２０の発光表示１１の周りに被覆された蛍光層１８が安定化し、その厚みが一定に保持されて、発光観測面における色むらがより少なくなる。前記取付部１２０の板厚が０．１５ｍｍよりも薄い場合は、樹脂１７が取付部１２０の側面を超えて裏面まで濡らし、その結果、蛍光層１８の厚さに部分的なばらつきが生じて、色むらの原因となる。   The attachment portion 120 of the first lead frame 12a to which the light emitting element 11 is attached preferably has a plate thickness of 0.15 mm or more. In this way, the resin 17 wets the back surface beyond the side surface of the mounting portion 120, the fluorescent layer 18 covered around the light emitting display 11 of the mounting portion 120 is stabilized, and the thickness thereof is kept constant, Color unevenness on the emission observation surface is reduced. When the plate thickness of the mounting portion 120 is thinner than 0.15 mm, the resin 17 wets the back surface beyond the side surface of the mounting portion 120, resulting in partial variation in the thickness of the fluorescent layer 18, It causes uneven color.

図６は本発明の他の実施形態を示しており、（Ａ）はリードフレーム１２ａへの発光素子１１の取付部分を示す縦断面図、（Ｂ）はその平面図を示している。この実施形態では、前記取付部１２０の近傍に、前記発光素子１１の周囲に被覆する蛍光体１６を含有した樹脂１７が流出するのを阻止するストッパ用樹脂１８を付着させている。   6A and 6B show another embodiment of the present invention. FIG. 6A is a longitudinal sectional view showing a portion where the light emitting element 11 is attached to the lead frame 12a, and FIG. 6B is a plan view thereof. In this embodiment, a stopper resin 18 for preventing the resin 17 containing the phosphor 16 covering the light emitting element 11 from flowing out is attached in the vicinity of the mounting portion 120.

この構成によれば、蛍光層１８の樹脂１７は、ストッパ用樹脂１９により外方に流出するのが阻止される。これにより、樹脂１７は取付部１２０上において一定の大きさで所定の形状に確実に保形されて、発光素子１１の周りにおける樹脂１７中に含有する蛍光体１６の分布量を均一化させられる。特に、同図のように、前記発光素子１１と各リードフレーム１２ａ，１２ｂとの間を２本の金線１４ａ，１４ｂにより電気的に接続する場合は、取付部１２０上に被覆した蛍光層１８の樹脂１７が、硬化時の粘性低下により前記第１リードフレーム１２ａ側に配線される金線１４ａに沿って引きずられて、取付部１２０からこれに連続する第1 リードフレーム１２ａ側に流出しようとするが、この樹脂１７の流出が前記ストッパ用樹脂１９により阻止され、樹脂１７はストッパ用樹脂１９と取付部１２０の各辺の縁で流れが制限されることによって、一定の大きさで所定の形状に保形される。   According to this configuration, the resin 17 of the fluorescent layer 18 is prevented from flowing outward by the stopper resin 19. Thereby, the resin 17 is securely held in a predetermined shape with a constant size on the mounting portion 120, and the distribution amount of the phosphor 16 contained in the resin 17 around the light emitting element 11 can be made uniform. . In particular, as shown in the figure, when the light emitting element 11 and each lead frame 12a, 12b are electrically connected by two gold wires 14a, 14b, the fluorescent layer 18 coated on the mounting portion 120 is used. The resin 17 is dragged along the gold wire 14a wired on the first lead frame 12a side due to a decrease in viscosity at the time of curing, and tries to flow out from the mounting portion 120 to the first lead frame 12a side that is continuous therewith. However, the resin 17 is prevented from flowing out by the stopper resin 19, and the flow of the resin 17 is restricted at the edges of the sides of the stopper resin 19 and the mounting portion 120. Retained in shape.

以上の実施形態では、反射型の発光装置について説明したが、本発明は透過型の発光装置に適用することもできる。また、各実施形態では、前記リードフレームにおける発光素子の取付部を矩形状としたが、この取付部は円形状としても同様の効果が得られる。発光素子の平面形は円形の場合もある。さらに、蛍光体を含有する樹脂としては、上記した光硬化型のエポキシ樹脂以外にもシリコン樹脂などの粘性の高い樹脂を使用することもできる。   Although the reflective light emitting device has been described in the above embodiment, the present invention can also be applied to a transmissive light emitting device. Moreover, in each embodiment, although the attachment part of the light emitting element in the said lead frame was made into the rectangular shape, the same effect is acquired even if this attachment part is made circular. The planar shape of the light emitting element may be circular. Furthermore, as the resin containing the phosphor, a highly viscous resin such as a silicone resin can be used in addition to the above-described photo-curable epoxy resin.

本発明にかかる発光装置の一実施形態を示す縦断面図である。It is a longitudinal cross-sectional view which shows one Embodiment of the light-emitting device concerning this invention. リードフレームへの発光素子の取付部分の一例を示しており、（Ａ）は縦断面図、（Ｂ）はその上面図である。An example of the attachment part of the light emitting element to a lead frame is shown, (A) is a longitudinal cross-sectional view, (B) is the top view. リードフレームへの発光素子の取付部分の変形例を示しており、（Ａ）は縦断面図、（Ｂ）はその上面図である。The modification of the attachment part of the light emitting element to a lead frame is shown, (A) is a longitudinal cross-sectional view, (B) is the top view. 発光素子の取付部の部分を拡大して示す平面図である。It is a top view which expands and shows the part of the attaching part of a light emitting element. 本発明で特定する寸法比率を逸脱した場合を示す説明図で、（Ａ）は寸法比率が１．５倍未満の場合を、 (Ｂ) は寸法比率が３．５倍を越えたの場合を示している。It is explanatory drawing which shows the case where it deviates from the dimension ratio specified by this invention, (A) is a case where a dimension ratio is less than 1.5 times, (B) is a case where a dimension ratio exceeds 3.5 times. Show. 本発明の他の実施形態を示しており、（Ａ）はリードフレームの取付部への発光素子の取付部分を示す縦断面図、（Ｂ）はその上面図である。FIGS. 4A and 4B show another embodiment of the present invention, in which FIG. 4A is a longitudinal sectional view showing a mounting portion of a light emitting element to a mounting portion of a lead frame, and FIG. 従来例を説明する縦断面図である。It is a longitudinal cross-sectional view explaining a prior art example.

符号の説明Explanation of symbols

１１…発光素子
１２ａ…リードフレーム
１２０…取付部
１６…蛍光体
１７…樹脂
１８…蛍光層
１９…ストッパ用樹脂
２２…保護層
Ｌ１…取付部の辺の長さ
Ｌ２…発光素子の辺の長さ DESCRIPTION OF SYMBOLS 11 ... Light emitting element 12a ... Lead frame 120 ... Mounting part 16 ... Phosphor 17 ... Resin 18 ... Phosphor layer 19 ... Resin for stoppers 22 ... Protective layer L1 ... Length of side of mounting part L2 ... Length of side of light emitting element

Claims (8)

リードフレームと、前記リードフレームの取付部に取り付けられて単色の放射光を発生するた発光素子と、前記発光素子からの放射光を吸収してこれとは異なる波長の光を発生する蛍光体を樹脂中に分散させてなり前期発光素子を覆う蛍光層と、前記蛍光層を覆う保護層とを備え、
前記リードフレームの取付部の寸法が、前記発光素子の平面視における最大寸法に対し１．５〜３．５倍の寸法比率である発光装置。 A lead frame, a light emitting element that is attached to a mounting portion of the lead frame and generates monochromatic radiation, and a phosphor that absorbs radiation emitted from the light emitting element and generates light of a different wavelength A fluorescent layer dispersed in the resin and covering the light emitting element in the previous period, and a protective layer covering the fluorescent layer,
The light emitting device wherein the dimension of the mounting portion of the lead frame is a dimensional ratio of 1.5 to 3.5 times the maximum dimension in plan view of the light emitting element. 請求項１において、 前記リードフレームにおける取付部の近傍に、前記発光素子の周囲に充填する蛍光層が流出するのを阻止するストッパ用樹脂が付着している発光装置。 The light-emitting device according to claim 1, wherein a stopper resin that prevents the fluorescent layer filling the periphery of the light-emitting element from flowing out is attached in the vicinity of the attachment portion of the lead frame. 請求項１または２において、前記発光素子は、平面視で矩形であり、平面視で矩形の前記取付部に取り付けられており、
平面視における発光素子の対向する二辺と取付部の対向する二辺とがそれぞれ平行であり、
取付部の辺の長さが、これと平行な発光素子の辺の長さに対し１．５〜３．５倍である発光装置。 In Claim 1 or 2, the light emitting element is rectangular in a plan view, and is attached to the rectangular mounting portion in a plan view,
The two opposite sides of the light emitting element in plan view and the two opposite sides of the mounting portion are parallel to each other,
A light emitting device in which the length of the side of the mounting portion is 1.5 to 3.5 times the length of the side of the light emitting element parallel to the mounting portion. 請求項、２または３において、前記寸法比率が２．０〜３．０倍である発光装置。 4. The light emitting device according to claim 2, wherein the dimensional ratio is 2.0 to 3.0 times. 請求項１から４のいずれか一項において、前記蛍光層の樹脂は光硬化性である発光装置。 5. The light-emitting device according to claim 1, wherein the resin of the fluorescent layer is photocurable. 請求項１から５のいずれか一項において、前記蛍光層の樹脂は粘度が１００〜１２００ｃｐｓである発光装置。 6. The light emitting device according to claim 1, wherein the resin of the fluorescent layer has a viscosity of 100 to 1200 cps. 請求項１から５のいずれか一項において、前記リードフレームの取付部の厚さが０．１５ｍｍ以上である発光装置。 The light-emitting device according to claim 1, wherein a thickness of the attachment portion of the lead frame is 0.15 mm or more. 請求項１から７のいずれか一項において、さらに、反射凹面を有する凹面体を備え、前記反射凹面に対向して前記発光素子が配置されている発光装置。
8. The light emitting device according to claim 1, further comprising a concave body having a reflective concave surface, wherein the light emitting element is disposed so as to face the reflective concave surface. 9.
JP2004115516A 2004-04-09 2004-04-09 Light emitting device Pending JP2005302944A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004115516A JP2005302944A (en) 2004-04-09 2004-04-09 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004115516A JP2005302944A (en) 2004-04-09 2004-04-09 Light emitting device

Publications (1)

Publication Number Publication Date
JP2005302944A true JP2005302944A (en) 2005-10-27

Family

ID=35334096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004115516A Pending JP2005302944A (en) 2004-04-09 2004-04-09 Light emitting device

Country Status (1)

Country Link
JP (1) JP2005302944A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015185661A (en) * 2014-03-24 2015-10-22 スタンレー電気株式会社 semiconductor device
JP2018022930A (en) * 2010-11-19 2018-02-08 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Light emitting device and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018022930A (en) * 2010-11-19 2018-02-08 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Light emitting device and manufacturing method of the same
JP2015185661A (en) * 2014-03-24 2015-10-22 スタンレー電気株式会社 semiconductor device

Similar Documents

Publication Publication Date Title
US7129638B2 (en) Light emitting devices with a phosphor coating having evenly dispersed phosphor particles and constant thickness
KR100930171B1 (en) White light emitting device and white light source module using same
US20150207045A1 (en) Light-Emitting Device and Method of Manufacturing the Same
TW201133929A (en) Light-emitting device and surface light source device using the same
JP5810301B2 (en) Lighting device
JP2008235824A5 (en)
JP2000208822A (en) Semiconductor light-emitting device
JP2008235824A (en) Light-mitting device and method of manufacturing the same
JP2005311395A (en) Manufacturing method of semiconductor light-emitting device
JP2015126209A (en) Light emitting device
JP4386789B2 (en) Method for manufacturing light-emitting diode element
US9812495B2 (en) Light emitting device and lighting apparatus
JP3725413B2 (en) Semiconductor light emitting device
JP2017162942A (en) Light-emitting device and illuminating device
JP2017045773A (en) Light-emitting device
US10714460B2 (en) Light emitting device and manufacturing method thereof
JP2001177157A (en) Semiconductor light emitting device
JP6225910B2 (en) Light emitting device
JP2007043074A (en) Luminaire
JP6097040B2 (en) Semiconductor light emitting device and manufacturing method thereof
JP2014075429A (en) Light emitting device and heat sink attachment method to the same
JP2010192762A (en) Semiconductor light emitting device
JP2007324630A (en) Semiconductor light-emitting device
JP2011071349A (en) Light emitting device
KR101195430B1 (en) White light emitting device and white light source module using the same