JP2005294388A - Tape carrier for semiconductor device and semiconductor device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a tape carrier for semiconductor device which may be bent easily and is hardly result in breaking of wires even when it is bent, and also to provide a semiconductor device using the same tape carrier. <P>SOLUTION: The TAB tape 1 is provided with an insulating tape 11 such polyimide, a signal pattern 12 formed on the insulating tape 11, lead wires 13, 13 for connecting the signal patterns 12, 12, and a solder resist 14 covering the signal patterns 12 and lead wires 13. Here, the lead wire 13 is formed in the shape of wave. Formation in the shape of wave makes it difficult in breaking of the lead wire 13 because such shape corresponds to elongation and contraction of the lead wire 13 when the lead wire is bent at the bending portion 2. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

  The present invention relates to a tape carrier for a semiconductor device and a semiconductor device using the same, and more particularly to a tape carrier for a semiconductor device which is easy to bend and a lead wiring is not easily broken even if it is bent, and a semiconductor device using the same.

  2. Description of the Related Art With the recent increase in functionality and miniaturization of mobile terminals and mobile phones, semiconductor devices mounted on these devices store memories and logic ICs in a single TAB tape or package. In particular, a semiconductor device in which semiconductor chips that are three-dimensionally bent and wired using a TAB tape or a substrate are stacked is known in that a high device density can be secured in a semiconductor package (see, for example, Patent Document 1). ).

  FIG. 4 shows a schematic plan view of a conventional TAB tape. The TAB tape 50 includes an insulating tape 51 made of polyimide having excellent heat resistance and chemical resistance, and a signal pattern 52 (hereinafter referred to as “copper foil circuit pattern”) formed on the insulating tape 51. ”) And linear lead wirings 53 and 53 for connecting the signal patterns 52 and 52, and a solder resist layer 54 covering the signal pattern 52 and the lead wiring 53. The TAB tape 50 is bent at the bent portion 80 so that the signal patterns 52 and 52 are inside.

  FIG. 5 shows a cross section taken along line BB of the conventional TAB tape shown in FIG. The TAB tape 50 connects an insulating tape 51 made of polyimide, a signal pattern 52 formed with the insulating tape 51 interposed therebetween, a ground pattern 55 formed on the copper pattern 68, and the signal pattern 52 and the ground pattern 55. Through-hole vias 56, signal pads 52 and ground patterns 55, electrode pads 59 made of a gold plating layer, lead wirings 53 connecting the signal patterns 52, 52, signal patterns 52 and leads Solder resists 63 and 63 for protecting the wiring 53 and the like are provided. The TAB tape 50 is bent at the bent portion 80 so that the signal patterns 52 and 52 are inside.

  FIG. 6 shows a semiconductor device 60 formed by mounting a semiconductor chip on a conventional TAB tape 50 and bending it at a bent portion 80. This semiconductor device 60 has a semiconductor chip 58 mounted on the signal pattern 52 of the conventional TAB tape 50 shown in FIG. 5, and a gold-plated wire 61 that connects the signal pattern 52 and the semiconductor chip 58 via electrode pads 59; A bent portion 80 is provided with a mold resin 57 that covers the gold-plated wire 61, the semiconductor chip 58, and the like, and a solder ball 70 that serves as an external terminal through the electrode pad 59, with the signal pattern 52 on the inside. In this case, the semiconductor chip 58 is bent so as to be encased therein.

According to the conventional semiconductor device 60, since the signal patterns 52 are arranged so as to face each other and are bent at the bent portion 80, the mounting density of the semiconductor chips is improved with respect to a mother board (not shown).
JP 2002-237568 A (FIG. 1)

  However, according to a conventional tape carrier for a semiconductor device and a semiconductor device using the same, (1) the lead wiring in the bent portion is straight and difficult to bend, and (2) the bending curvature is high because of the straight lead wiring. There is a possibility that stress concentrates on a point that is unbalanced and breaks, and (3) the lead wiring may not follow the expansion and contraction of the tape in the T cycle test (temperature cycle test), and the lead wiring may break. There was a problem.

  Accordingly, an object of the present invention is to provide a tape carrier for a semiconductor device that is easy to bend and in which a lead wiring is not easily broken even if it is bent, and a semiconductor device using the same.

  In order to achieve the above object, the present invention provides an insulating tape as a base material, a conductor pattern formed on at least one surface of the insulating tape, and a bent portion capable of bending the insulating tape and the conductor pattern integrally. The tape carrier for a semiconductor device according to claim 1, wherein the conductor pattern of the bent portion is formed in a waveform.

  The waveform preferably has a bending curvature of at least 0.1 mm.

  The bent portion is formed on one surface of the insulating tape, and is disposed on the inner side when bent, and a second solder resist layer formed on the other surface of the insulating tape. It is preferable that the thickness of the first solder resist layer is the same as or thinner than the thickness of the second solder resist.

  In order to achieve the above object, the present invention provides an insulating tape as a base material, a first conductor pattern formed on one surface of the insulating tape, and a second conductor formed on the other surface of the insulating tape. In the tape carrier for a semiconductor device, comprising: a pattern; and a bent portion capable of bending the insulating tape and the first and second conductor patterns integrally with the first conductor pattern inside. Provides a tape carrier for a semiconductor device, wherein the thickness of the first conductor pattern is the same as or thinner than the thickness of the second conductor pattern.

  In order to achieve the above object, the present invention provides an insulating tape as a base material and a conductive pattern formed on at least one surface of the insulating tape, on which a semiconductor element is mounted, together with the insulating tape at a bent portion. In the bent semiconductor device, the conductor pattern in the bent portion is formed in a waveform.

  The waveform preferably has a bending curvature of at least 0.1 mm.

  The bent portion is formed on one surface of the insulating tape, and is disposed on the inner side when bent, and a second solder resist layer formed on the other surface of the insulating tape; It is preferable that the thickness of the first solder resist layer is the same as or thinner than the thickness of the second solder resist layer.

  In order to achieve the above object, the present invention provides an insulating tape as a base material, a first conductor pattern formed on one surface with the insulating tape sandwiched therebetween, on which a semiconductor chip is mounted, and the insulating tape in between. In the semiconductor device in which the second conductor pattern formed on the surface, the insulating tape, and the first and second conductor patterns are bent integrally with the first conductor pattern inside, the bent portion Provides a semiconductor device characterized in that the thickness of the first conductor pattern is the same as or thinner than the thickness of the second conductor pattern.

  According to the tape carrier for a semiconductor device of the present invention, since the conductor pattern in the bent portion is formed in a waveform, it is possible to avoid stress concentration at one point, and the conductor pattern expands and contracts in accordance with the bending. The disconnection of the conductor pattern can be prevented.

  According to the tape carrier for a semiconductor device of the present invention, since the bent portion has a waveform with a bending curvature of at least 0.1 mm, the conductor pattern expands and contracts according to the curvature even if the conductor pattern is bent at the bent portion. It is easy to bend and the conductor pattern can be prevented from being disconnected.

  According to the tape carrier for a semiconductor device of the present invention, the thickness of the first solder resist that becomes the inner side when bent is equal to or thinner than the thickness of the second solder resist that becomes the outer side when bent. Since the first and second solder resists can be expanded and contracted according to the bending, the conductor pattern is expanded and contracted according to the expansion and contraction of the first and second solder resists, thereby preventing the conductor pattern from being disconnected. it can.

  According to the tape carrier for a semiconductor device of the present invention, since the thickness of the second conductor pattern that becomes the outer side when bent at the bent portion is the same as or thicker than the thickness of the first conductor pattern that becomes the inner side, Since it has the intensity | strength according to the expansion-contraction of the 1st and 2nd conductor pattern, the disconnection of a conductor pattern can be prevented.

  According to the semiconductor device of the present invention, since the conductor pattern of the bent portion is formed in a shape that relaxes the expansion and contraction received by the bent conductor pattern, it is possible to avoid stress concentration at one point and the conductor pattern expands and contracts according to the bending. Therefore, it is easy to bend and the disconnection of the conductor pattern can be prevented.

  According to the semiconductor device of the present invention, since the bent portion has a waveform in which the bent portion has a bending curvature of at least 0.1 mm, the conductor pattern expands and contracts even if the lead wiring is bent at the bent portion. It is easy to bend and the conductor pattern can be prevented from being disconnected.

  According to the semiconductor device of the present invention, the thickness of the first solder resist that becomes the inner side when bent is the same as or thinner than the thickness of the second solder resist that becomes the outer side when bent. Since the first and second solder resists can be expanded and contracted accordingly, the conductor pattern is expanded and contracted according to the expansion and contraction of the first and second solder resists, and disconnection of the conductor pattern can be prevented.

  According to the semiconductor device of the present invention, the thickness of the second conductor pattern that becomes the outer side when bent at the bent portion is the same as or thicker than the thickness of the first conductor pattern that becomes the inner side. Since it has the intensity | strength according to expansion / contraction of 2 conductor patterns, the disconnection of a conductor pattern can be prevented.

  FIG. 1 is a schematic plan view of a TAB tape according to an embodiment of the present invention. The TAB tape 1 includes an insulating tape 11 made of polyimide having excellent heat resistance and chemical resistance, a signal pattern 12 formed on the insulating tape 11, and lead wirings connecting the signal patterns 12 and 12. 13 and 13 and a solder resist 14 covering the signal pattern 12 and the lead wiring 13. The TAB tape 1 is bent at the bent portion 2 so that the signal patterns 12 and 12 are inside.

  Here, the lead wiring 13 is formed in a waveform, and is formed in a shape including a curve having a waveform bending curvature of at least 0.1 mm. The reason why the waveform is formed is to cope with the expansion or contraction when the lead wiring 13 is bent.

  FIG. 2 shows a cross section taken along line AA of the TAB tape according to the embodiment of the present invention shown in FIG. The TAB tape 1 is formed on an insulating tape 11 made of polyimide having a thickness of 25 to 50 μm, a signal pattern 12 made of copper foil having a thickness of 9 to 15 μm and the copper foil 40 formed with the insulating tape 11 interposed therebetween. A ground pattern 19 made of copper foil having a thickness of 9 to 30 μm, a through-hole via 15 for connecting the signal pattern 12 and the ground pattern 19, and a gold plating layer formed on the signal pattern 12 and the ground pattern 19. Electrode pads 21, lead wirings 13 for connecting the signal patterns 12, 12, and solder resists 14, 14 for protecting the signal patterns 12, lead wirings 13 and the like.

  The thickness of the solder resist 14 inside the insulating tape 11 is 5 to 35 μm, and the thickness of the solder resist 14 outside the insulating tape 11 is 5 to 40 μm. The TAB tape 1 is bent so that the surface on which the signal pattern 12 is formed in the bent portion 2 is inside.

  FIGS. 3-1 to 3-3 are explanatory diagrams of the method for manufacturing the TAB tape according to the embodiment of the present invention. The TAB tape 1 is manufactured as follows.

  First, a three-layer structure in which a base material is a 12 μm thick copper foil 30 and a 12 μm thick copper foil 40 on both surfaces of an insulating tape 11 made of polyimide (polyimide resin insulating film) having a thickness of 25 μm. Prepare a double-sided copper-clad flexible tape with (FIG. 3-1 (a)).

  Next, the perforation 31 is punched and formed by pressing the flexible tape with a die ((b) in the figure).

  Next, a negative film-like photosensitive resist 32 having a thickness of 15 μm is pasted on the copper foils 30 and 40 by roll lamination (FIG. 3C), and a mask (not shown) is provided on the ground plane G side. The photosensitive resist 32 is exposed, a via pattern having a diameter of 60 μm is baked on the ground surface G, and the photosensitive resist 32 is developed with a sodium carbonate solution to form a via pattern 34 (FIG. 4D).

  Next, a copper pattern 35 was formed by etching the ground surface G on which the via pattern 34 was formed with a ferric chloride solution shower ((e) in the figure).

  Next, the photosensitive resist is removed with a sodium hydroxide solution, the polyimide is removed with a UV laser, and desmear treatment is performed to remove the polyimide residue, thereby forming a through-hole via 15 (FIG. 3-2 (f )).

  Next, a conductive film of palladium is attached to the processed through-hole via 15 so that the signal surface S is attached with a cover film (not shown) so as not to be plated with copper, and a copper plating layer 38 having a thickness of about 10 μm is formed on the ground surface G. And the signal plane S and the ground plane G are electrically connected (FIG. 5G).

  Next, a negative film-like photosensitive resist 32 is pasted on both sides of the tape with a roll laminator (FIG. 11 (h)), and the signal surface S and the ground surface G are masked (not shown) and exposed to a sodium carbonate solution. Development was performed to form a via pattern 34 of a photosensitive resist on the signal surface S and the ground surface G ((i) in the figure). Next, double-sided etching is performed in a shower of ferric chloride solution to form a signal pattern 12 and a ground pattern 19, and then the photosensitive resist is removed with a sodium hydroxide solution ((j) in the figure).

  At this time, when the wiring pattern of the bent portion of the signal surface S is a line L and a space s, L / s = 30/40 μm is set. In addition, a wavy wiring with five bending points and a curvature of 500 μm was used.

  Next, in order to protect and insulate the signal pattern 12 and the ground pattern 19, an insulating polyimide photosensitive solder resist is applied to the signal surface S and the ground surface G, and exposed and developed to form a pattern of the solder resist 14. (FIG. 3-3 (k)).

  Next, an electrode pad 21 made of a gold plating layer was formed on the opened signal pattern 12 and ground pattern 19 (FIG. 3-3 (l)).

The TAB tape according to the embodiment of the present invention has the following effects.
(A) Since the lead wiring 13 is formed in a wave shape, it is possible to avoid a stress concentration at the time of bending at the time of mounting, and thus the disconnection of the lead wiring 13 can be prevented.
(B) Although stress is applied in the direction in which the lead wiring 13 extends in the bent portion 2, the corrugation can secure a length of extension corresponding to the extending direction, and thereby stress applied to the lead wiring 13 is reduced. Alleviated.
(C) It is expected that the lead wiring 13 of the bent portion 2 is not perpendicular to the bending direction, and stress relaxation in the lateral direction can be expected by forming it in a waveform.
(D) Since the lead wiring 13 expands and contracts as the insulating tape 11 expands and contracts, the breakage of the lead wiring 13 can be prevented.
(E) By changing the thickness of the lead wiring 13 of the bent portion 2, the lead wire 13 has strength corresponding to the expansion and contraction received by the bent portion 2, and therefore, disconnection of the lead wiring 13 is prevented. Can do.
(F) Since the thickness of the solder resist 14 arranged on the inner side and the solder resist 14 arranged on the outer side with respect to the insulating tape 11 in the bent portion 2 was changed, according to the expansion and contraction of the solder resists 14 and 14 The lead wiring 13 expands and contracts, and disconnection of the lead wiring 13 can be prevented.

  Note that although the TAB tape according to the embodiment of the present invention has been described with respect to a two-metal TAB tape, it is also applicable to a one-metal TAB tape. Further, although the semiconductor device for bending has been described, it can also be applied to a TAB tape for LCD.

  Moreover, although the negative resist-form thing was used for the photosensitive resist, a positive type may be sufficient and a liquid form may be sufficient.

It is a schematic plan view of the TAB tape which concerns on embodiment of this invention. It is sectional drawing which follows the AA line of FIG. It is explanatory drawing of the manufacturing method of the semiconductor device which concerns on embodiment of this invention. It is explanatory drawing of the manufacturing method of the semiconductor device which concerns on embodiment of this invention. It is explanatory drawing of the manufacturing method of the semiconductor device which concerns on embodiment of this invention. It is a schematic plan view of the conventional TAB tape. It is sectional drawing which follows the BB line of FIG. It is sectional drawing which shows the semiconductor device formed with the conventional TAB tape.

Explanation of symbols

1,50 TAB tape 2 Bent part 11, 51 Insulating tape 12, 52 Signal pattern 13, 53 Lead wiring 14, 54, 63 Solder resist 15, 56 Through-hole via 19, 55 Ground pattern 21, 59 Electrode pads 30, 40 Copper foil 31 Perforation 32 Photosensitive resist 34 Via pattern 35 Copper pattern 38 Copper plating layer 58 Semiconductor chip 57 Mold resin 60 Semiconductor device 61 Gold plating wire 68 Copper pattern 70 Solder ball S Signal surface G Ground surface

Claims (8)

In a tape carrier for a semiconductor device having an insulating tape as a base material, a conductor pattern formed on at least one surface of the insulating tape, and a bent portion capable of bending the insulating tape and the conductor pattern integrally,
The tape carrier for a semiconductor device, wherein the conductor pattern of the bent portion is formed in a waveform.   2. The tape carrier for a semiconductor device according to claim 1, wherein the waveform has a bending curvature of at least 0.1 mm. The bent portion is formed on one surface of the insulating tape, and is disposed on the inner side when bent, and a second solder resist layer formed on the other surface of the insulating tape. And
2. The tape carrier for a semiconductor device according to claim 1, wherein the thickness of the first solder resist layer is the same as or thinner than the thickness of the second solder resist. An insulating tape as a base material; a first conductor pattern formed on one surface of the insulating tape; a second conductor pattern formed on the other surface of the insulating tape; the insulating tape; In the tape carrier for a semiconductor device having a second conductor pattern and a bent portion that can be bent integrally with the first conductor pattern inside.
The tape carrier for a semiconductor device, wherein the bent portion is formed such that a thickness of the first conductor pattern is the same as or thinner than a thickness of the second conductor pattern. In a semiconductor device in which an insulating tape as a base material is formed on at least one surface of the insulating tape and a conductor pattern on which a semiconductor element is mounted is bent together with the insulating tape at a bent portion.
The semiconductor device, wherein the conductor pattern in the bent portion is formed in a waveform.   6. The semiconductor device according to claim 5, wherein the waveform has a bending curvature of at least 0.1 mm. The bent portion is formed on one surface of the insulating tape and is disposed on the inner side when the folded portion is bent; and a second solder resist layer formed on the other surface of the insulating tape; Have
6. The semiconductor device according to claim 5, wherein the thickness of the first solder resist layer is the same as or thinner than the thickness of the second solder resist layer. An insulating tape as a base material, a first conductor pattern formed on one surface sandwiching the insulating tape and mounting a semiconductor chip, and a second conductor pattern formed on the other surface sandwiching the insulating tape In the semiconductor device in which the insulating tape and the first and second conductor patterns are bent integrally with the first conductor pattern inside,
The semiconductor device according to claim 1, wherein the bent portion is formed such that a thickness of the first conductor pattern is equal to or thinner than a thickness of the second conductor pattern.

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