JP2005285193A - Manufacturing method of thin film magnetic head, and manufacturing method of electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film magnetic head, by which thin film magnetic heads can be mass-produced stably by suppressing variation in formation thickness of magnetic pole layers as much as possible. <P>SOLUTION: In the state that a principal magnetic pole layer 10 is formed on an insulator layer 9 and dents 9H are formed in the insulator layer 9, after an insulator layer 11, a stopper layer 53, an insulator layer 12, a stopper layer 54 and an insulator layer 55 are formed in this order so as to cover these insulator layer 9 (dents 9H) and the principal magnetic pole layer 10, the insulator layers 11, 12, 55 are sequentially polished using a CMP (Chemical Mechanical Polishing) method while controlling a degree of progression of polishing processing utilizing the stopper layers 53, 54 of two-stage configuration. Since ruggedness resulting from dents 55H provided in the insulator layer 55 is fully eased in a polishing process, when a plurality of thin film magnetic heads are formed on a wafer in parallel, the formation thickness of principal magnetic pole layers 10 become to be hardly fluctuated among respective thin film magnetic heads. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method of manufacturing a thin film magnetic head provided with at least an inductive magnetic transducer for recording, and a method of manufacturing an electronic component applied to, for example, a method of manufacturing a thin film magnetic head.

  In recent years, for example, improvement in performance of a thin-film magnetic head has been demanded with improvement in surface recording density of a magnetic recording medium such as a hard disk (hereinafter simply referred to as “recording medium”). As a recording method of this thin film magnetic head, for example, a longitudinal recording method in which the direction of the signal magnetic field is set in the in-plane direction (longitudinal direction) of the recording medium, or a direction of the signal magnetic field is set in a direction orthogonal to the surface of the recording medium. A perpendicular recording method is known. At present, the longitudinal recording method is widely used, but considering the market trend accompanying the improvement of surface recording density, it is assumed that the perpendicular recording method will be promising instead of the longitudinal recording method in the future. . This is because, when the vertical recording method is used, a high linear recording density can be ensured and the recorded recording medium is less susceptible to thermal fluctuations.

  A perpendicular recording thin film magnetic head mainly includes a thin film coil that generates a magnetic flux for recording, and a magnetic pole layer that executes a recording process by releasing the magnetic flux generated in the thin film coil toward a recording medium. ing. In this thin film magnetic head manufacturing process, for example, a magnetic pole layer is formed so as to be embedded by an insulating layer, a gap layer is formed so as to cover the insulating layer together with the magnetic pole layer, and then a thin film is formed on the gap layer. The coil is patterned. In this case, in particular, in order to form an extremely thin gap layer so as to have a uniform thickness and to form a thin film coil with high accuracy so as to have a desired pattern shape, for example, the pole layer and its After forming the insulating layer so as to cover the peripheral region, it is necessary to planarize the insulating layer together with the pole layer.

As this planarization method, for example, a polishing process is generally used (see, for example, Patent Documents 1 and 2). As a specific planarization process using the polishing process, for example, after forming a magnetic layer so as to fill a groove provided in the insulating layer, the polishing process proceeds using a stopper layer formed on the insulating layer. The pole layer is formed in the groove by polishing and flattening the magnetic layer while controlling the degree. According to this planarization method, since the progress of the polishing process is controlled using the stopper layer, the planarization process can be easily performed.
Japanese Patent Laid-Open No. 2002-092221 Japanese Patent Laid-Open No. 08-102014

  By the way, in order to stably mass-produce perpendicular recording type thin film magnetic heads, for example, it is necessary to control the formation thickness of the magnetic pole layer responsible for recording processing as accurately as possible. However, in the conventional planarization method that planarizes while controlling the progress of the polishing process using the stopper layer, for example, a CMP (Chemical Mechanical Polishing) method with a physical and chemical polishing action is used as the polishing method. In this case, although the progress of the polishing process is controlled using the stopper layer, the pole layer and the insulating layer are likely to be excessively polished mainly due to the chemical polishing action. When the thin film magnetic heads are formed in parallel, there is a problem that the amount of excessive polishing differs between the thin film magnetic heads, that is, the formation thickness of each magnetic pole layer tends to vary. In particular, the variation in the formation thickness of the magnetic pole layer described above is, for example, when the insulating layer is formed so as to cover the magnetic pole layer and its peripheral region and then flattened by polishing the insulating layer. When the insulating layer has irregularities due to the foundation on which the surface is formed having irregularities, that is, when the insulating layer provided with irregularities (particularly concave portions) is polished to be planarized Become prominent. Therefore, in order to ensure the stable mass productivity of the perpendicular recording type thin film magnetic head, it is urgent to establish a planarization technique capable of suppressing the variation in the formation thickness of the pole layer as much as possible. In this case, in particular, it is possible to establish a flattening technique capable of suppressing as much as possible variations in the formation thickness of the electronic device that constitutes the electronic component for various uses, not limited to the magnetic pole layer constituting the thin film magnetic head. is important.

  The present invention has been made in view of such problems, and a first object thereof is a thin film capable of stably mass-producing thin film magnetic heads by suppressing variations in the formation thickness of the pole layer as much as possible. The object is to provide a method of manufacturing a magnetic head.

  A second object of the present invention is to provide an electronic component manufacturing method capable of stably mass-producing electronic components by suppressing variations in the formation thickness of the electronic device as much as possible.

  A method of manufacturing a thin film magnetic head according to the present invention includes a thin film coil that generates magnetic flux, and a magnetic flux that extends backward from a recording medium facing surface that faces the recording medium moving in the medium traveling direction and is generated in the thin film coil. Is a method of manufacturing a thin film magnetic head having a magnetic pole layer that emits light toward a recording medium, wherein the magnetic pole layer is patterned on the underlayer and a depression is formed along the magnetic pole layer in the underlayer. The first step, the second step of forming the first insulating layer so as to cover the pole layer and the underlying layer in the peripheral region, and the progress of the polishing process on the first insulating layer in the peripheral region of the pole layer A third step of patterning a first stopper layer for controlling the first and a second insulating layer so as to cover the first stopper layer and the first insulating layer in the peripheral region thereof Process and magnetic pole A fifth step of patterning a second stopper layer for controlling the progress of the polishing process on the second insulating layer in the peripheral region of the second stopper layer, and the second insulation in the second stopper layer and the peripheral region A sixth step of forming a third insulating layer so as to cover the layer, a seventh step of polishing at least the third insulating layer until the second stopper layer is exposed, and the exposed second stopper layer An eighth step of removing the first stopper layer; a ninth step of polishing at least the first and second insulating layers until the first stopper layer is exposed; and a tenth step of removing the exposed first stopper layer. Are included.

  In the method for manufacturing a thin film magnetic head according to the present invention, since the magnetic pole layer is formed using the method for manufacturing an electronic component according to the present invention, for example, when a plurality of thin film magnetic heads are formed in parallel on a substrate, The formation thickness of the pole layer is less likely to vary between the thin film magnetic heads.

  The method for manufacturing an electronic component according to the present invention is a method for manufacturing an electronic component including an electronic device. The electronic device is patterned on the underlayer and a depression is formed in the underlayer along the electronic device. The first step, the second step of forming the lowermost insulating layer so as to cover the underlying layer of the electronic device and its peripheral region, and the progress of the polishing process on the lowermost insulating layer in the peripheral region of the electronic device. A third step of patterning the lowermost stopper layer for controlling, and an intermediate covering the lowermost stopper layer and the region corresponding to the lowermost insulating layer on the lowermost insulating layer in the lowermost stopper layer and its peripheral region The combination of the insulating layer and the intermediate stopper layer, which is disposed in a region corresponding to the intermediate insulating layer in the peripheral region of the electronic device and controls the progress of the polishing process, extends over one or more steps. A fourth step of laminating by forming repeatedly, a fifth step of forming the uppermost insulating layer so as to cover the uppermost intermediate stopper layer and the uppermost intermediate insulating layer in the peripheral region, and the intermediate stopper layer A sixth step of sequentially polishing the bottom insulating layer, the intermediate insulating layer, and the top insulating layer until the bottom stopper layer is exposed while sequentially removing the exposed intermediate stopper layer, and exposing the bottom bottom And a seventh step of removing the stopper layer.

  In the method of manufacturing an electronic component according to the present invention, in a state where an electronic device is patterned on the underlayer and a depression is formed along the electronic device in the underlayer, (1) the electronic device and its peripheral region A lowermost insulating layer is formed so as to cover the base layer, and (2) a lowermost stopper layer for controlling the progress of the polishing process is formed on the lowermost insulating layer in the peripheral region of the electronic device by pattern formation. ) An intermediate insulating layer covering a region corresponding to the lowermost stopper layer and the lowermost insulating layer on the lowermost insulating layer in the lowermost stopper layer and its peripheral region, and a region corresponding to the intermediate insulating layer in the peripheral region of the electronic device And a combination with an intermediate stopper layer that controls the degree of progress of the polishing process is repeatedly formed over one stage or two or more stages, and (4) the top layer After the uppermost insulating layer is formed so as to cover the intermediate stopper layer and the uppermost intermediate insulating layer in the peripheral region, (5) the intermediate stopper layer is sequentially exposed and the exposed intermediate stopper layer is removed while being removed. The lowermost insulating layer, the intermediate insulating layer, and the uppermost insulating layer are sequentially polished until the lower stopper layer is exposed. In this case, in the process in which the lowermost insulating layer, the intermediate insulating layer, and the uppermost insulating layer are polished until the lowermost stopper layer is exposed, unevenness caused by the presence of the depression provided in the uppermost insulating layer (specifically As a result, the concave portion is sufficiently relaxed. As a result, the pole layer is not excessively polished when the polishing process is completed by exposing the bottom stopper layer. It becomes difficult to deviate from the formation thickness. Accordingly, for example, when a plurality of electronic components are formed in parallel on the substrate, the formation thickness of the electronic device is less likely to vary among the electronic components.

  In the method of manufacturing a thin film magnetic head according to the present invention, in the first step, the magnetic pole layer is formed so as to include the magnetic pole tip portion that defines the recording track width of the recording medium, and the first step is performed on the underlayer. Forming a precursor magnetic pole layer pattern so that a portion corresponding to the magnetic pole tip portion has a width larger than that of the magnetic pole tip portion, and etching the precursor magnetic pole layer pattern together with the underlayer, of the precursor magnetic pole layer pattern The magnetic pole layer is formed so that the width of the magnetic pole tip portion gradually decreases from the medium traveling direction side toward the opposite side of the medium traveling direction side by gradually narrowing the width of the portion corresponding to the magnetic pole tip portion. May be formed by selectively digging in along the precursor magnetic pole layer pattern to form depressions so as to be disposed on both sides of the magnetic pole layer. In this case, it is possible to form a precursor magnetic pole layer pattern by forming a precursor magnetic pole layer on the underlayer and then etching and patterning the precursor magnetic pole layer.

  In the method of manufacturing a thin film magnetic head according to the present invention, in the third and fifth steps, the first and second steps are performed using a material whose polishing rate is slower than that of the first, second and third insulating layers. The stopper layer is preferably formed. In particular, in the fifth step, it is preferable to form the second stopper layer so as to have a thickness equal to or greater than the thickness of the first stopper layer.

  In the method for manufacturing a thin film magnetic head according to the present invention, the pole layer may be formed in the first step so as to emit a magnetic flux for magnetizing the recording medium in a direction perpendicular to the surface thereof. In particular, it is possible to form a plurality of thin film magnetic heads in parallel by forming a plurality of magnetic pole layers in parallel on the substrate.

  In the electronic component manufacturing method according to the present invention, a plurality of electronic devices can be formed in parallel by forming a plurality of electronic devices on the substrate in parallel.

  According to the method for manufacturing a thin film magnetic head according to the present invention, a plurality of thin film magnetic heads are formed in parallel on a substrate, for example, based on the formation of the pole layer using the method for manufacturing an electronic component according to the present invention. In this case, the formation thickness of the pole layer is less likely to vary between the thin film magnetic heads. Therefore, it is possible to stably mass-produce thin film magnetic heads by suppressing variations in the formation thickness of the pole layer as much as possible. become.

  According to the method of manufacturing an electronic component according to the present invention, the combination of the intermediate insulating layer and the intermediate stopper layer is one or more steps between the lowermost insulating layer and the lowermost stopper layer and the uppermost insulating layer. In this state, the lowermost insulating layer, the intermediate insulating layer, and the uppermost insulating layer are sequentially polished until the lowermost stopper layer is exposed while sequentially removing the exposed intermediate stopper layer while sequentially exposing the intermediate stopper layer. For example, when multiple electronic components are formed in parallel on a substrate, the thickness of the electronic device is less likely to vary between electronic components. By suppressing as much as possible, electronic parts can be stably mass-produced.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  First, a configuration of a thin film magnetic head manufactured using a method of manufacturing a thin film magnetic head according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a cross-sectional configuration of a thin film magnetic head, where (A) shows a cross section parallel to the air bearing surface (cross section parallel to the XZ plane), and (B) shows a cross section perpendicular to the air bearing surface (YZ plane). The cross-section is parallel to FIG. 2 shows a plan configuration of the main part of the thin film magnetic head shown in FIG. 1, and FIG. 3 shows an enlarged plan configuration of the exposed surface of the pole layer. An arrow D shown in FIG. 1 represents a direction (medium traveling direction) in which a recording medium (not shown) travels relative to the thin film magnetic head.

  In the following description, the distance in the X-axis direction shown in FIGS. 1 to 3 is expressed as “width”, the distance in the Y-axis direction is expressed as “length”, and the distance in the Z-axis direction is expressed as “thickness”. Further, the side near the air bearing surface in the Y-axis direction is referred to as “front”, and the opposite side is referred to as “rear”. These notation contents are the same also in FIG.

This thin film magnetic head is mounted on a magnetic recording device such as a hard disk drive in order to perform magnetic processing on a magnetic recording medium such as a hard disk (hereinafter simply referred to as “recording medium”) that moves in the medium traveling direction D. It is what is done. Specifically, the thin film magnetic head is, for example, a composite head capable of performing both recording processing and reproducing processing as magnetic processing. For example, as shown in FIG. 1, for example, AlTiC (Al ₂ O _3. On a substrate 1 made of a ceramic material such as TiC), an insulating layer 2 made of a nonmagnetic insulating material such as aluminum oxide (Al ₂ O ₃ ; hereinafter simply referred to as “alumina”), and a magnetoresistance A reproducing head portion 100A that executes a reproducing process using the (MR; Magneto-resistive) effect, a separation layer 7 made of a nonmagnetic insulating material such as alumina, for example, and a shield that executes a recording process of a perpendicular recording method The recording head portion 100B of the mold and the overcoat layer 18 made of a nonmagnetic insulating material such as alumina are laminated in this order.

  The reproducing head unit 100A has, for example, a configuration in which a lower read shield layer 3, a shield gap film 4, and an upper read shield layer 5 are stacked in this order. An MR element 6 as a reproducing element is embedded in the shield gap film 4 so that one end face is exposed on a recording medium facing surface (air bearing surface) 40 facing the recording medium.

  The lower read shield layer 3 and the upper read shield layer 5 both magnetically isolate the MR element 6 from the surroundings, and extend rearward from the air bearing surface 40. These lower lead shield layer 3 and upper lead shield layer 5 are, for example, both nickel iron alloys (NiFe (for example, Ni: 80 wt%, Fe: 20 wt%); hereinafter simply referred to as “Permalloy (trade name)”. .), And the thickness thereof is about 1.0 μm to 2.0 μm.

  The shield gap film 4 electrically isolates the MR element 6 from the surroundings, and is made of a nonmagnetic insulating material such as alumina.

  The MR element 6 performs a reproducing process by using, for example, a giant magnetoresistive (GMR) effect or a tunneling magnetoresistive (TMR) effect.

  The recording head portion 100B is embedded with, for example, a pole layer 20 embedded in the periphery with insulating layers 9, 11, and 12, a gap layer 13 provided with a connection opening (back gap 13BG), and an insulating layer 15. The thin film coil 14 and the write shield layer 30 are stacked in this order. 2 shows only the magnetic pole layer 20, the thin film coil 14, and the write shield layer 30 in the recording head portion 100B.

  The magnetic pole layer 20 stores magnetic flux generated in the thin film coil 14 and performs recording processing by releasing the magnetic flux toward the recording medium. The magnetic pole layer 20 extends rearward from the air bearing surface 40, Specifically, it extends to a position corresponding to the back gap 13BG provided in the gap layer 13. In particular, the magnetic pole layer 20 has, for example, a laminated structure in which the main magnetic pole layer 10 is disposed on the trailing side of the auxiliary magnetic pole layer 8, that is, the auxiliary magnetic pole layer 8 and the main magnetic pole layer 10 are laminated in this order. This “trailing side” refers to the flow out side (the medium traveling direction D side) when the moving state of the recording medium moving in the medium traveling direction D shown in FIG. In this case, the upper side in the thickness direction (Z-axis direction). On the other hand, the flow inflow side (the side opposite to the medium traveling direction D side) is referred to as the “leading side”, and here refers to the lower side in the thickness direction.

  The auxiliary magnetic pole layer 8 functions as an auxiliary magnetic flux accommodating portion for securing the magnetic flux accommodating amount of the main magnetic pole layer 10, and is made of a magnetic material having a high saturation magnetic flux density, such as an iron-cobalt alloy, for example. It is configured. Examples of the iron-cobalt alloy include iron-cobalt alloy (FeCo) and iron-cobalt nickel alloy (FeCoNi). The auxiliary magnetic pole layer 8 extends rearward from a position retracted from the air bearing surface 40 and is connected to the main magnetic pole layer 10. Note that “connected” means that they are connected in physical contact with each other and are connected in a magnetically conductive manner, and the meaning of “connected” is the same in the following description. It is. The auxiliary magnetic pole layer 8 has, for example, a rectangular planar shape having a width W2 as shown in FIG.

  The main magnetic pole layer 10 functions as a main magnetic flux emitting portion, and is made of a magnetic material having a high saturation magnetic flux density such as an iron-cobalt alloy like the auxiliary magnetic pole layer 8. The main magnetic pole layer 10 extends rearward from the air bearing surface 40, specifically, extends from the air bearing surface 40 to a position corresponding to the back gap 13 BG, and partially extends to the auxiliary magnetic pole layer 8. It is connected to. For example, as shown in FIG. 2, the main magnetic pole layer 10 has a constant width W1 (W1 = about 0.10 μm to 0.30 μm) that defines the recording track width in order from the side closer to the air bearing surface 40. The tip portion 10A as the tip portion of the magnetic pole that emits the magnetic flux generated in the thin film coil 14 toward the recording medium, and the width W2 (W2) connected to the rear of the tip portion 10A and larger than the width W1 of the tip portion 10A. And rear end portion 10B having> W1). The position where the width of the main magnetic pole layer 10 extends from the front end portion 10A (width W1) to the rear end portion 10B (width W2) is one of important factors that determine the recording performance of the thin film magnetic head. Point FP ”.

  The tip portion 10A is a portion that substantially releases the magnetic flux generated in the thin film coil 14 toward the recording medium, and has an exposed surface M exposed to the air bearing surface 40 as shown in FIG. For example, as shown in FIG. 3, the exposed surface M has a planar shape whose width gradually decreases from the trailing side toward the leading side, that is, an upper end edge E1 (so-called so-called edge) located on the trailing side. It has a left and right inverted trapezoidal shape with the trailing edge TE) as the upper base and the lower end edge E2 (so-called leading edge LE) located on the leading side as the lower base. The trailing edge TE of the tip portion 10 </ b> A is a substantial recording location in the pole layer 10. The angle that defines the exposed surface M having the inverted trapezoidal plane shape, that is, the angle θ between the side edge E3 of the exposed surface M and the extending direction of the leading edge LE can be freely set. For example, the tip portion 10A has a cross-sectional shape corresponding to the exposed surface M regardless of the position in the length direction (Y-axis direction). Note that the planar shape of the exposed surface M is not necessarily limited to the left-right inverted trapezoidal shape, but may be a left-right non-target inverted trapezoidal shape.

  The rear end portion 10B is a portion that accommodates a part of the magnetic flux accommodated in the auxiliary magnetic pole layer 8 and supplies it to the front end portion 10A. The width of the rear end portion 10B is, for example, a constant width W2 at the rear, and gradually decreases from the width W2 to the width W1 as it approaches the front end portion 10A at the front.

  The insulating layer 9 mainly electrically isolates the auxiliary magnetic pole layer 8 from the periphery, and is made of, for example, a nonmagnetic insulating material such as alumina. Of this insulating layer 9, the peripheral region of the pole layer 20 (the tip 10A of the main pole layer 10) is selectively dug down along the pole layer 20, as shown in FIG. That is, the depression 9H is provided in the insulating layer 9. Specifically, the recess 9H is provided in the insulating layer 9 so as to be disposed on both sides with the tip portion 10A interposed therebetween, for example. This recess 9H is formed when the main magnetic pole layer 10 is formed by using the etching process so that the cross-sectional shape of the tip portion 10A becomes a left and right inverted trapezoidal shape in the formation process of the magnetic pole layer 20. The insulating layer 9 is formed by being selectively dug down under the influence. The depth of the recess 9H is, for example, about 1.0 μm.

  The insulating layer 11 mainly electrically isolates the main magnetic pole layer 10 from the periphery. For example, like the insulating layer 9, the insulating layer 11 is made of a nonmagnetic insulating material such as alumina. As described above, the insulating layer 11 is disposed so as to embed the periphery of the main magnetic pole layer 10 and to fill the recess 9 </ b> H provided in the insulating layer 9. In the insulating layer 11, a portion corresponding to the depression 9H is provided with a depression 11H having a depth shallower than that of the depression 9H, for example, as shown in FIG.

  The insulating layer 12 mainly separates the main magnetic pole layer 10 from the periphery together with the insulating layer 11 and is made of, for example, a nonmagnetic insulating material such as alumina. For example, the insulating layer 12 is disposed so as to fill a recess 11 </ b> H provided in the insulating layer 11.

  The gap layer 13 constitutes a gap for magnetically separating the pole layer 20 and the write shield layer 30. The gap layer 13 is made of, for example, a nonmagnetic insulating material such as alumina and has a thickness of about 0.2 μm or less.

  The thin film coil 14 generates a magnetic flux for recording, and is made of, for example, a highly conductive material such as copper (Cu). For example, as shown in FIG. 2, the thin film coil 14 has a winding structure in which the thin film coil 14 is wound in a spiral shape around the back gap 13BG. In FIGS. 1 and 2, only a part of the plurality of windings constituting the thin film coil 14 is shown.

  The insulating layer 15 covers the thin film coil 14 and is electrically separated from the surroundings, and is disposed on the gap layer 13 so as not to block the back gap 13BG. The insulating layer 15 is made of, for example, a photoresist (photosensitive resin) or spin-on-glass (SOG) that exhibits fluidity when heated, and a portion near the edge has a rounded slope. doing. The position of the foremost end of the insulating layer 15 is a “throat height zero position TP” which is one of the important factors that determine the recording performance of the thin film magnetic head, and the air bearing surface 40 and the throat height zero position TP. The distance between is “throat height TH”. The throat height TH is, for example, about 0.3 μm or less. 1 and 2 show a case where, for example, the throat height zero position TP coincides with the flare point FP.

  The write shield layer 30 takes in the spreading component of the magnetic flux emitted from the pole layer 20 and prevents the spreading of the magnetic flux. The write shield layer 30 extends rearward from the air bearing surface 40 on the trailing side of the pole layer 20, and is specifically separated from the pole layer 20 by the gap layer 13 on the side close to the air bearing surface 40. In addition, it extends so as to be connected to the pole layer 20 through the back gap 13BG on the side far from the air bearing surface 40. In particular, the write shield layer 30 includes, for example, two constituent elements that are separate from each other, that is, a TH defining layer 16 that functions as a main magnetic flux intake port, and a flow path for magnetic flux that is captured from the TH defining layer 16. And a functioning yoke layer 17.

  The TH defining layer 16 is adjacent to the gap layer 13 and is located between the air bearing surface 40 and the air bearing surface 40 and the back gap 13BG, specifically, between the air bearing surface 40 and the thin film coil 14. It extends to. The TH defining layer 16 is made of a magnetic material having a high saturation magnetic flux density such as permalloy or iron-cobalt alloy, and is larger than the width W2 of the pole layer 20, for example, as shown in FIG. It has a rectangular planar shape having a width W3 (W3> W2). The TH defining layer 16 is adjacent to an insulating layer 15 in which the thin film coil 14 is embedded. That is, the TH defining layer 16 defines the foremost end position (throat height zero position TP) of the insulating layer 15. In particular, it plays the role of defining the throat height TH.

  The yoke layer 17 extends from the air bearing surface 40 to a position corresponding to the back gap 13BG so as to cover the insulating layer 15. The yoke layer 17 rides on and is connected to the TH defining layer 16 in the front and the back gap 13BG in the rear. To the pole layer 20. The yoke layer 17 is made of, for example, the same magnetic material as that of the TH defining layer 16, and has a rectangular planar shape having a width W3 like the TH defining layer 16, as shown in FIG. ing.

  Next, the operation of the thin film magnetic head will be described with reference to FIGS.

  In this thin film magnetic head, when information is recorded, if a current flows from an external circuit (not shown) to the thin film coil 14 of the recording head unit 100B, a magnetic flux is generated in the thin film coil 14. The magnetic flux generated at this time is accommodated in the magnetic pole layer 20 and then flows in the magnetic pole layer 20 toward the tip portion 10 </ b> A of the main magnetic pole layer 10. At this time, the magnetic flux flowing in the magnetic pole layer 20 is concentrated at the flare point FP as the width of the magnetic pole layer 20 decreases, so that the magnetic flux near the trailing edge TE in the exposed surface M of the tip 10A. concentrate. When the magnetic flux concentrated in the vicinity of the trailing edge TE is released to the outside from the exposed surface M of the tip portion 10A, a recording magnetic field (vertical magnetic field) is generated in a direction perpendicular to the surface of the recording medium. Since the recording medium is magnetized in the vertical direction, information is magnetically recorded on the recording medium. When recording information, since the spread component of the magnetic flux emitted from the tip 10A is taken into the write shield layer 30, the spread of the magnetic flux is prevented. The magnetic flux taken into the write shield layer 30 is circulated to the pole layer 20 through the back gap 13BG.

  On the other hand, at the time of reproduction, when a sense current flows through the MR element 6 of the reproducing head unit 100A, the resistance value of the MR element 6 changes according to the reproduction signal magnetic field from the recording medium. Since this resistance change is detected as a change in the sense current, information recorded on the recording medium is magnetically read out.

  Next, a method of manufacturing a thin film magnetic head used for manufacturing the thin film magnetic head shown in FIGS. 1 to 3 will be described with reference to FIGS. 4 to 14 are for explaining the manufacturing process of the thin film magnetic head, and all show the cross-sectional structure corresponding to FIG. FIG. 15 shows a plan configuration of the main part of the thin film magnetic head in the process of manufacture, and corresponds to the cross-sectional configuration shown in FIG. 9 or FIG. FIG. 16 is for explaining the mass production process of the thin film magnetic head. The “electronic component manufacturing method” of the present invention is applied to the thin film magnetic head manufacturing method according to the present embodiment in order to manufacture a thin film magnetic head as the electronic component. The “parts manufacturing method” will be described together below.

  In the following, first, the outline of the manufacturing process of the entire thin film magnetic head will be described with reference to FIGS. 1 and 16, and then the main part (recording head unit 100B) of the thin film magnetic head will be described with reference to FIGS. The formation process will be described in detail. Since the materials, dimensions, structural features, etc. of the series of components of the thin film magnetic head have already been described in detail, the description thereof will be omitted from time to time.

  This thin-film magnetic head mainly uses an existing thin-film process including a film forming technique such as plating or sputtering, a patterning technique such as photolithography, and an etching technique such as dry etching. Manufactured by sequentially forming and laminating. That is, as shown in FIG. 1, first, after forming the insulating layer 2 on the substrate 1, the lower read shield layer 3 and the shield gap film 4 in which the MR element 6 is embedded on the insulating layer 2, The read head portion 100A is formed by laminating the upper read shield layer 5 in this order. Subsequently, after forming the separation layer 7 on the reproducing head portion 100A, the magnetic pole layer 20 (auxiliary magnetic pole layer 8, main magnetic pole layer 10) whose periphery is buried on the separation layer 7 by insulating layers 9, 11, 12 is formed. ), A gap layer 13 provided with a back gap 13BG, an insulating layer 15 in which a thin film coil 14 is embedded, and a write shield layer 30 (TH defining layer 16 and yoke layer 17) are laminated in this order. The head portion 100B is formed. Finally, after the overcoat layer 18 is formed on the recording head portion 100B, the air bearing surface 40 is formed using machining or polishing, thereby completing the thin film magnetic head.

  In particular, a plurality of thin film magnetic heads are formed in parallel on a wafer as a substrate. Specifically, for example, as shown in FIG. 16, the above-described series of thin film magnetic head manufacturing processes are performed in parallel as the electronic component manufacturing process for each of the plurality of formation regions R provided on the wafer 201. That is, by forming a plurality of magnetic pole layers 20 as electronic devices in parallel, thin film magnetic heads 202 as electronic components are formed in parallel. In FIG. 16, the configuration of the thin film magnetic head 202 is schematically shown.

  When forming the main part of the thin film magnetic head, first, as shown in FIG. 4, the auxiliary magnetic pole layer 8 is patterned on the separation layer 7 and then the auxiliary magnetic pole layer 8 and its peripheral region are covered. After the insulating layer 9 is formed, the insulating layer 9 is polished and planarized until the auxiliary magnetic pole layer 8 is exposed by using, for example, a CMP (Chemical Mechanical Polishing) method, so that the insulating layer is formed around the auxiliary magnetic pole layer 8. 9 is buried.

  Subsequently, as shown in FIG. 4, the precursor magnetic pole layer 10 </ b> Z <b> 1 is formed on the polished flat surface including the insulating layer 9 as the underlayer by using, for example, sputtering. The precursor magnetic pole layer 10Z1 is a preparatory layer that becomes the main magnetic pole layer 10 by being etched in a subsequent process. When the precursor magnetic pole layer 10Z1 is formed, for example, the thickness is set to about 0.4 μm.

  Subsequently, as shown in FIG. 4, the precursor mask layer 51Z is formed on the precursor magnetic pole layer 10Z1 by using, for example, sputtering. The precursor mask layer 51Z serves as an etching mask used for etching the mask 51 (see FIG. 5) to be described later, that is, the precursor magnetic pole layer 10Z1 by being etched in a subsequent process. When forming the precursor mask layer 51Z, for example, an inorganic insulating material such as alumina or aluminum nitride (AlN) whose etching rate is slower than that of the precursor magnetic pole layer 10Z1 is used, and the thickness becomes about 0.3 μm. Like that.

  Subsequently, as shown in FIG. 4, a mask 52 is patterned on the precursor mask layer 51Z. This mask 52 is an etching mask used for etching the precursor mask layer 51Z. When forming this mask 52, for example, it has a pattern shape corresponding to the planar shape of the main magnetic pole layer 10 to be finally formed, and specifically includes a tip portion 52A corresponding to the tip portion 10A, The tip 52A has a width W0 (W0> W1) larger than the width W1 of the tip 10A. When forming the mask 52, for example, an interval is provided between the mask 52 and specifically, it corresponds to the formation region of the depression 9H (see FIG. 6) formed in the insulating layer 9 in a later step. A mask 52X is also formed so as to surround the periphery of the region to be provided with a space.

  The formation procedure of this mask 52 is as follows, for example. That is, first, a seed layer (not shown) as an electrode layer is formed on the precursor mask layer 51Z using sputtering. As a material for forming the seed layer, for example, a magnetic material similar to the material for forming the mask 52 is used. Subsequently, after applying a photoresist on the seed layer and applying a photoresist film, the photoresist film is patterned using a photolithography process to form a photoresist pattern (not shown) for forming the mask 52. Z). When this photoresist pattern is formed, an opening corresponding to the planar shape of the mask 52 is provided. As a material for forming the photoresist pattern, for example, either positive type or negative type photoresist can be used. Subsequently, a mask 52 is formed by selectively growing a plating film in the opening of the photoresist pattern using the seed layer as an electrode layer. Finally, only the mask 52 is left by removing the photoresist pattern. Thereby, the mask 52 is formed on the precursor mask layer 51Z. The formation procedure of the mask 52X is the same as the formation procedure of the mask 52 described above.

  Subsequently, as shown in FIG. 4, the masks 52 and 52X are used to perform patterning by etching the precursor mask layer 51Z and the precursor magnetic pole layer 10Z1 using, for example, reactive ion etching (RIE). . By this etching process, both the precursor mask layer 51Z and the precursor magnetic pole layer 10Z1 are patterned so as to correspond to the planar shape of the mask 52. Therefore, as shown in FIG. 5, as the precursor mask layer 51Z after patterning, the mask 51 Are formed, and similarly, the precursor magnetic pole layer pattern 10Z2 is formed as the precursor magnetic pole layer 10Z1 after patterning. This precursor magnetic pole layer pattern 10Z2 is formed so as to include a tip portion 10Z2A (width W0) corresponding to the tip portion 52A of the mask 52. This mask 51 is an etching mask used for etching the precursor magnetic pole layer pattern 10Z2 in a later step. When the mask 51 and the precursor magnetic pole layer pattern 10Z2 are formed, for example, the precursor mask layer 51Z and the precursor magnetic pole layer 10Z1 are patterned together so as to correspond to the planar shape of the mask 52X. A mask 51X is formed as the precursor mask layer 51Z, and a precursor magnetic pole layer pattern 10Z2X is similarly formed as the precursor magnetic pole layer 10Z1 for each patterning. When the precursor mask layer 51Z and the precursor magnetic pole layer 10Z1 are etched to form the masks 51, 51X and the precursor magnetic pole layer patterns 10Z2, 10Z2X, for example, only the precursor mask layer 51Z and the precursor magnetic pole layer 10Z1 are used. Since the masks 52 and 52X themselves are also etched, the thicknesses of the masks 52 and 52X are reduced. In this case, for example, the masks 52 and 52X may remain when the etching process is completed (see FIG. 5), or may disappear without remaining.

  Subsequently, as shown in FIG. 5, using the masks 51 and 52X, the precursor magnetic pole layer pattern 10Z2 is processed by etching using, for example, ion milling. When this precursor magnetic pole layer pattern 10Z2 is etched, for example, the precursor magnetic pole layer pattern 10Z2 is irradiated with an ion beam from an oblique direction, and more specifically, an extended surface (X axis and Y axis) of the precursor magnetic pole layer pattern 10Z2 The angle between the perpendicular (line parallel to the Y axis) to the plane including the axis and the irradiation direction of the ion beam is about 50 ° to 70 °. By this etching process, due to the difference in etching rate between the mask 51 formed of an inorganic insulating material having a low etching rate and the precursor magnetic pole layer pattern 10Z2 formed of a magnetic material having a high etching rate, The amount of etching based on the etching action in the width direction (direction parallel to the X-axis direction) with respect to the tip portion 10Z2A of the precursor magnetic pole layer pattern 10Z2 gradually increases from the upper side (trailing side) toward the lower side (leading side), That is, since the width of the tip portion 10Z2A is gradually narrowed, as shown in FIG. 6, the main magnetic pole layer 10 is formed so as to include the tip portion 10A and the rear end portion 10B as the precursor magnetic pole layer pattern 10Z2 after the etching process. The As described above, the front end portion 10A of the main magnetic pole layer 10 is smaller than the width W0 on the trailing side based on a characteristic etching action in which the etching amount gradually increases from the trailing side toward the leading side. It has a width W1 (W1 <W0) and a width W4 (W4 <W1) smaller than the width W1 on the leading side, that is, an inverted trapezoidal shape that is gradually narrowed from the trailing side toward the leading side. It is formed to have a cross-sectional shape. When the main magnetic pole layer 10 is formed, the etching action based on the difference in etching rate between the mask 51 and the precursor magnetic pole layer pattern 10Z2 is also caused between the mask 51X and the precursor magnetic pole layer pattern 10Z2X. In other words, since the width of the precursor magnetic pole layer pattern 10Z2X is gradually narrowed, the magnetic pole layer pattern 10X is formed as the precursor magnetic pole layer pattern 10Z2X after the etching process. When the main magnetic pole layer 10 and the magnetic pole layer pattern 10X are formed, the main magnetic pole layer 10 (tip portion 10A) and the magnetic pole layer pattern 10X are formed on the basis of the etching action in the vertical direction (the direction parallel to the Y axis). Since the insulating layer 9 is selectively dug along, the depressions 9H are formed so as to be arranged on both sides with the tip portion 10A interposed therebetween as shown in FIG. The depth of the recess 9H is, for example, about 1.0 μm. When the precursor magnetic pole layer patterns 10Z2 and 10Z2X are etched to form the main magnetic pole layer 10 and the magnetic pole layer pattern 10X, for example, not only the precursor magnetic pole layer patterns 10Z2 and 10Z2X but also the masks 52 and 52X themselves are used. Since the etching is performed, the thickness of the masks 52 and 52X is further reduced. For example, if the thickness of the mask 52 becomes about 0.5 μm when the formation of the main magnetic pole layer 10 is completed when the recess 9H is formed, the total thickness of the main magnetic pole layer 10 and the masks 51 and 52 is as follows. Since it is about 1.2 μm, if the depth of the depression 9H (= about 1.0 μm) is added, the gap between the bottom (lowest position) of the depression 9H and the surface of the mask 52 (highest position) A height difference of about 2.2 μm will occur.

  Subsequently, as shown in FIG. 7, the photoresist film is patterned by using a photolithography process so as to selectively cover the main magnetic pole layer 10 and its peripheral region (region corresponding to the recess 9H). A mask 60 is formed.

  Subsequently, using the mask 60, for example, by performing a wet etching process on the entire surface, the masks 51X and 52X and the magnetic pole layer pattern 10X are selectively removed as shown in FIG. Remove.

Subsequently, as shown in FIG. 9, for example, sputtering is used to cover the main magnetic pole layer 10, the masks 51 and 52, and the insulating layer 9 in the peripheral region S, and in particular, the depression provided in the insulating layer 9. An insulating layer 11 (first insulating layer) as a lowermost insulating layer is formed so as to embed 9H. When the insulating layer 11 is formed, for example, a nonmagnetic insulating material such as alumina (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), or aluminum nitride (AlN) is used. When the insulating layer 11 is formed, the insulating layer 11 is formed to have irregularities due to the difference in height between the bottom of the depression 9H and the surface of the mask 52. A recess 11H is formed at a location corresponding to the recess 9H. In particular, when forming the insulating layer 11, for example, the surface position of the insulating layer 11 in the peripheral region S is made higher than the surface position of the main magnetic pole layer 10, specifically, the insulating layer 11 in the peripheral region S. The thickness T1 is about 0.43 μm.

  Subsequently, as shown in FIG. 9, a stopper layer 53 (first stopper layer) as a lowermost stopper layer is patterned on the insulating layer 11 in the peripheral region S by using, for example, sputtering. This stopper layer 53 is used for controlling the progress of the polishing process in a later step. Since the laminated structure including the masks 51X and 52X and the pole layer pattern 10X is formed in the peripheral region S in the previous process (see FIGS. 6 and 7), the insulating layer 9 is etched in the peripheral region S. However, the stopper layer 53 is also formed flat, reflecting the flatness of the insulating layer 9. When forming the stopper layer 53, for example, a material whose polishing rate is slower than that of the insulating layer 11 and insulating layers 12 (see FIG. 10) and 55 (see FIG. 11) to be described later is used. (Ta), chromium (Cr), carbon (C), molybdenum (Mo), tungsten (W) or an alloy thereof is used. In particular, when the stopper layer 53 is formed, for example, as shown in FIG. 15, the stopper layer 53 is arranged with a space along the outer periphery of the main magnetic pole layer 10 so as to surround the main magnetic pole layer 10 from the periphery. The stopper layer 53 has a planar shape and the thickness of the stopper layer 53 is about 100 nm. When forming the stopper layer 53, for example, it may be formed as a single layer as described above, or may be formed as a laminated or mixed layer containing different materials.

  The procedure for forming the stopper layer 53 is, for example, as follows. That is, first, after a photoresist film is formed on the insulating layer 11, the photoresist film is patterned using a photolithography process, so that a region corresponding to the main magnetic pole layer 10 on the insulating layer 11 ( A lift-off photoresist pattern (not shown) is formed in the central region C). When this photoresist pattern is formed, for example, it has a planar shape corresponding to the main magnetic pole layer 10. Subsequently, the stopper layer 53 is formed so as to cover the photoresist pattern and its peripheral region S by using sputtering. When the stopper layer 53 is formed, a part of the stopper layer 53 is disposed on the photoresist pattern in the central region C, and the rest is disposed on the insulating layer 11 in the peripheral region S. . Finally, the photoresist pattern is removed by lifting off. As a result of this lift-off, part of the stopper layer 53 disposed thereon is removed together with the photoresist pattern, so that the stopper layer 53 remains only on the insulating layer 11 in the peripheral region S as shown in FIG. To do.

  Subsequently, as shown in FIG. 10, for example, sputtering is used to cover the stopper layer 53 and the insulating layer 11 in the peripheral region, and in particular, to fill the recess 11 </ b> H provided in the insulating layer 11. An insulating layer 12 (second insulating layer) is formed as an insulating layer. When the insulating layer 12 is formed, the insulating layer 12 is formed so as to have irregularities due to the depression 11H provided in the insulating layer 11, so that the insulating layer 12 has a portion corresponding to the depression 11H. A recess 12H is formed. In particular, when forming the insulating layer 12, for example, the thickness T2 of the insulating layer 12 in the peripheral region S is set to about 0.60 μm. The forming material of the insulating layer 12 is the same as the forming material of the insulating layer 11, for example.

  Subsequently, as shown in FIG. 10, a stopper layer 54 (second stopper layer) as an intermediate stopper layer is patterned on the insulating layer 12 in the peripheral region S using, for example, sputtering. This stopper layer 54 is used to control the progress of the polishing process in the same manner as the stopper layer 53 previously formed. When the stopper layer 54 is formed, for example, as shown in FIG. 15, the stopper layer 54 has a frame-like planar shape like the stopper layer 53, and the thickness of the stopper layer 54 is the thickness of the stopper layer 53. More specifically, the thickness is about 100 nm. The forming material and forming procedure of the stopper layer 54 are the same as the forming material and forming procedure of the stopper layer 53, for example. When the stopper layer 54 is formed, for example, it may be formed as a single layer as described above, or may be formed as a laminated or mixed layer containing different materials.

  Subsequently, as shown in FIG. 11, for example, sputtering is used to cover the stopper layer 54 and the insulating layer 12 in the peripheral region, and in particular, to fill the recess 12 </ b> H provided in the insulating layer 12. An insulating layer 55 (third insulating layer) is formed as an insulating layer. When the insulating layer 55 is formed, the insulating layer 55 is formed so as to have irregularities due to the recess 12H provided in the insulating layer 12, so that the insulating layer 55 has a portion corresponding to the recess 12H. A recess 55H is formed. When the insulating layer 55 is formed, for example, the thickness T3 of the insulating layer 55 in the peripheral region S is set to about 2.00 μm. The forming material of the insulating layer 55 is the same as the forming material of the insulating layer 12, for example. When the insulating layer 55 is formed, the insulating layers 11, 12, 55 are sequentially formed so as to cover the insulating layer 9 provided with the recess 9H. The recesses 11H, 12H, and 55H become deeper in this order because the unevenness that will be provided on the recesses is sequentially emphasized. Specifically, for example, as described above, the depth of the depression 9H provided in the insulating layer 9 is about 1.0 μm, whereas the depth of the depression 55H provided in the insulating layer 55 is about 2.0 μm.

  Subsequently, the entire surface is subjected to polishing using, for example, a CMP method. Specifically, as shown in FIG. 12, at least the insulating layer 55 (here, the insulating layers 12, 55, for example) is polished until reaching the stopper layer 54, that is, until the stopper layer 54 is exposed. In this polishing process, when the polishing process reaches the stopper layer 54 after polishing the insulating layers 12 and 55, the polishing process is caused by a difference (selection ratio) in the polishing rate between the insulating layers 12 and 55 and the stopper layer 54. Since the progress of the polishing process is suppressed, the polishing process does not proceed any further. When these insulating layers 12 and 55 are polished, the amount of polishing in the central region C is relatively higher than the amount of polishing in the peripheral region S because the recess 55H is provided in the insulating layer 55. Therefore, as shown in FIG. 12, when the stopper layer 54 is exposed in the peripheral region S, the insulating layers 12 and 55 are slightly over-polished and dug down in the central region C.

  Subsequently, the exposed stopper layer 54 is selectively removed using, for example, RIE. As a method for removing the stopper layer 54, for example, ion milling may be used instead of RIE. Since the etching rate when ion milling is used is higher in the stopper layer 54 than in the insulating layers 11, 12, and 55, the stopper layer 54 can be selectively removed using the difference in etching rate.

  Subsequently, the entire surface is subjected to polishing using, for example, a CMP method. Specifically, as shown in FIG. 13, at least the insulating layers 11 and 12 (here, for example, the insulating layers 11, 12, and 55) are polished until reaching the stopper layer 53, that is, until the stopper layer 53 is exposed. In this polishing process, when the polishing process reaches the stopper layer 53 after polishing the insulating layers 11, 12, and 55, the insulating layers 11, 12, 55 and the stopper layer 53 are formed in the same manner as the stopper layer 54 described above. Since the progress of the polishing process is suppressed due to the difference in the polishing rate between the two, the polishing process does not proceed any further. When these insulating layers 11, 12, and 55 are polished, the excessive polishing amount of the insulating layers 12 and 55 is suppressed to be small in the previous polishing step (see FIG. 12). Since there is almost no difference between the polishing amount of the peripheral region S and the polishing amount of the central region C, the polished surface after polishing becomes substantially flat, and in particular, the masks 51 and 52 together with the insulating layers 11, 12 and 55 are provided. Since it is removed by polishing together, the main magnetic pole layer 10 is exposed on the polished surface after polishing. When the main magnetic pole layer 10 is exposed to the polished surface, for example, the trailing end surface of the main magnetic pole layer 10 is slightly polished under the influence of the excessive polishing described above. The formation thickness T is substantially determined after polishing, and the trailing edge TE of the main magnetic pole layer 10 shown in FIG. 3 is substantially defined based on the polished surface after polishing.

  In this case, for example, after the polishing process is completed before the formation thickness of the main magnetic pole layer 10 reaches the target thickness T, the main magnetic pole layer 10 is etched by using ion milling instead of the polishing process. The formation thickness of the layer 10 may be adjusted to the target thickness T, and the trailing edge TE of the main magnetic pole layer 10 may be defined based on the etched surface after the etching. In general, the etching rate of ion milling is slower than the polishing rate of CMP method, that is, it is easier to adjust the formation thickness T of the main magnetic pole layer by using ion milling instead of CMP method. The formation thickness T of the main magnetic pole layer 10 can be controlled with higher accuracy. Further, when ion milling is used, the trailing edge TE loses its shape due to defects caused when the CMP method is used, for example, the main magnetic pole layer 10 after polishing is corroded by being exposed to the slurry. You can avoid that.

  For reference, there are several specific examples of the method of detecting that the polishing process has reached the stopper layers 53 and 54, that is, the end point of the polishing process. For example, when the insulating layers 11, 12, 55 are formed using alumina and the stopper layers 53, 54 are formed using tantalum, the insulating layers 11, 12, 55 and the stopper layers 53, 54 are formed. The end point of the polishing process is determined based on the change in the reflected light intensity using the difference in the light reflection characteristics between the first and second layers (the reflected light intensity of the insulating layers 11, 12, 55 <the reflected light intensity of the stopper layers 53, 54). You may make it detect. Further, for example, an end point of the polishing process may be detected based on a change in the ion concentration of the stopper layers 53 and 54 generated during polishing using an ion detector, or ions of the stopper layers 53 and 54 may be detected. The end point of the polishing process may be detected based on a change in color tone caused by the above.

  Subsequently, the exposed stopper layer 53 is selectively removed using, for example, RIE. When removing the stopper layer 53, for example, ion milling may be used instead of RIE, as in the case of removing the stopper layer 54 in the previous step.

  Subsequently, as shown in FIG. 14, the gap layer 13 is formed on the entire surface by using, for example, sputtering. When the gap layer 13 is formed, for example, the back gap 13BG is not covered and the thickness is about 0.2 μm or less.

  Subsequently, as shown in FIG. 14, for example, a plating film is grown on the gap layer 13 in a region in front of the region where the thin film coil 14 is to be formed in a later step, thereby forming the TH defining layer. 16 is formed into a pattern. When forming the TH defining layer 16, for example, the formation position is set in consideration of the fact that the throat height is determined based on the rear end position of the TH defining layer 16.

  Subsequently, as shown in FIG. 14, the thin film coil 14 is patterned by, for example, growing a plating film on the gap layer 13 between the TH defining layer 16 and the back gap 13BG. Subsequently, a photolithography process is used to pattern a photoresist film (not shown) so as to cover between and around each winding of the thin film coil 14, and then the photoresist film is baked to insulate the film. Layer 15 is formed. As a result of the flow of the photoresist film by this baking treatment, the insulating layer 15 is formed such that the front portion is adjacent to the TH defining layer 16 and the rear portion is rounded and inclined. When forming the thin film coil 14 and the TH defining layer 16, it is not always necessary to form the thin film coil 14 after the TH defining layer 16 is formed. For example, after forming the thin film coil 14, the TH defining layer is formed. 16 may be formed.

  Finally, the yoke layer 17 is patterned so as to cover the insulating layer 15 and its periphery by using, for example, plating or sputtering. When the yoke layer 17 is formed, the yoke layer 17 is connected to the TH defining layer 16 at the front and connected to the pole layer 20 through the back gap 13BG at the rear. As a result, the write shield layer 30 is formed so as to include the TH defining layer 16 and the yoke layer 17, and the recording head portion 100B is completed.

  In the method of manufacturing the thin film magnetic head according to the present embodiment, in the state where the main magnetic pole layer 10 is formed on the insulating layer 9 and the recess 9H is formed in the insulating layer 9, the insulating layer 9 (the recess 9H) and After forming the insulating layer 11, the stopper layer 53, the insulating layer 12, the stopper layer 54, and the insulating layer 55 in this order so as to cover the main magnetic pole layer 10, the polishing process is performed using the stopper layers 53, 54 having a two-stage structure. Since the insulating layers 11, 12, 55 are sequentially polished using the CMP method while controlling the degree of progress, the variation in the formation thickness T of the main magnetic pole layer 10 is suppressed as much as possible for the following reason. Thus, the thin film magnetic head can be mass-produced stably.

  17 and 18 are for explaining a method of manufacturing a thin film magnetic head as a comparative example with respect to the method of manufacturing a thin film magnetic head according to the present embodiment, and a method of manufacturing a thin film magnetic head according to the present embodiment. The process corresponding to FIGS. 11-13 in FIG. As shown in FIG. 17, the manufacturing method of the thin film magnetic head of this comparative example does not form the insulating layer 12 and the stopper layer 54 between the stopper layer 53 and the insulating layer 55, that is, the insulating layer 9 and the main pole. After forming the insulating layer 11, the stopper layer 53, and the insulating layer 55 in this order so as to cover the layer 10, as shown in FIG. 18, the progress of the polishing process is controlled by using the stopper layer 53 having a single-stage configuration. However, it has the same procedure as the method of manufacturing the thin film magnetic head according to the present embodiment except that the insulating layers 11 and 55 are sequentially polished using the CMP method.

  Unlike the thin film magnetic head manufacturing method according to the present embodiment, the thin film magnetic head manufacturing method of this comparative example does not have the insulating layer 12 and the stopper layer 54 between the stopper layer 53 and the insulating layer 55. As shown in FIG. 17, the insulating layer 55 provided with the recess 55H is CMP-polished together with the insulating layer 11 while the progress of the polishing process is controlled using only the stopper layer 53 having a single stage structure. In this case, in the process in which the insulating layers 11 and 55 are polished until the stopper layer 53 is exposed, there are some irregularities (specifically, concave portions) due to the presence of the depressions 55H provided in the insulating layer 55. Although the portion is relaxed, the unevenness is not sufficiently relaxed. Therefore, the amount of polishing in the central region C and the peripheral region S are controlled even though the progress of the polishing process is controlled using the stopper layer 53. The difference between the polishing amount becomes large. Specifically, the polishing amount in the central region C corresponding to the depression 55H becomes larger than the polishing amount in the peripheral region S. When the polishing amount in the central region C is larger than the polishing amount in the peripheral region S, as shown in FIG. 18, when the polishing process is completed by exposing the stopper layer 53, the insulating layers 11, 55, the main magnetic pole layer 10 is excessively polished more than necessary, so that the formation thickness T of the main magnetic pole layer 10 tends to deviate from the target formation thickness. Therefore, in the method of manufacturing the thin film magnetic head of the comparative example, when a plurality of thin film magnetic heads 202 are formed in parallel on the wafer 201 as described with reference to FIG. Since the formation thickness T of the layer 10 is likely to vary, it is difficult to stably mass-produce thin film magnetic heads by suppressing the variation in the formation thickness T of the main magnetic pole layer 10 as much as possible. In this case, the variation in the formation thickness T of the main magnetic pole layer 10, that is, the difference between the maximum value and the minimum value of the formation thickness T is, for example, about 120 nm.

  On the other hand, in the method of manufacturing the thin film magnetic head according to the present embodiment, since the insulating layer 12 and the stopper layer 54 exist between the stopper layer 53 and the insulating layer 55, as a first step, FIG. As shown in FIG. 12, the second step is performed after the insulating layer 55 provided with the depression 55H is CMP polished together with the insulating layer 12 while the progress of the polishing process is controlled using the stopper layer 54. As shown in FIGS. 12 and 13, the insulating layers 11, 12, and 55 are subjected to CMP while the progress of the polishing process is controlled again using the stopper layer 53. In this case, in the process in which the insulating layers 12 and 55 are polished until the stopper layer 54 is exposed, unevenness (specifically, recesses) due to the presence of the depression 55H provided in the insulating layer 55 is relaxed. In addition, in the process of polishing the insulating layers 11, 12, and 55 until the stopper layer 53 is exposed, the unevenness caused by the depression 55H is further relaxed. Therefore, the stopper layers 53 and 54 are used. As a result, the progress of the polishing process is controlled in two stages. As a result, there is almost no difference between the polishing amount of the central region C and the polishing amount of the peripheral region S, and specifically, the central region corresponding to the depression 55H. The polishing amount of C and the polishing amount of the peripheral region S are substantially equal to each other. When the polishing amount of the central region C and the polishing amount of the peripheral region S are substantially equal to each other, as shown in FIG. 13, when the polishing process is completed by exposing the stopper layer 53, an insulating layer is formed in the central region C. 11 and 12 and the main magnetic pole layer 10 is not excessively polished more than necessary, that is, the insulating layers 11 and 12 and the main magnetic pole layer 10 are almost flattened, so that the formation thickness T of the main magnetic pole layer 10 is the target formation thickness. It becomes hard to slip off. Therefore, in the method of manufacturing the thin film magnetic head according to the present embodiment, when a plurality of thin film magnetic heads 202 are formed in parallel on the wafer 201 as described with reference to FIG. Since the formation thickness T of the main magnetic pole layer 10 is less likely to vary, the thin film magnetic head can be stably mass-produced by suppressing the variation in the formation thickness T of the main magnetic pole layer 10 as much as possible. . In this case, the variation in the formation thickness T of the main magnetic pole layer 10 (difference between the maximum value and the minimum value of the formation thickness T) is, for example, about 50 nm, that is, about 1 / compared with the comparative example. 3

  Before the confirmation, the significance of the manufacturing method of the thin film magnetic head according to the present embodiment will be supplemented. As described with reference to FIGS. This method is useful when the main magnetic pole layer 10 is formed by etching the layer 10Z1 so that the tip portion 10A has an inverted trapezoidal cross-sectional shape. This is because when the precursor magnetic pole layer 10Z1 is etched to form the main magnetic pole layer 10 so as to include the tip portion 10A having an inverted trapezoidal cross-sectional shape, the precursor magnetic pole layer is formed by patterning the precursor magnetic pole layer 10Z1. After forming the pattern 10Z2, as shown in FIG. 5, in order to process the tip portion 10Z2A of the precursor magnetic pole layer pattern 10Z2, the precursor magnetic pole layer pattern 10Z2 is irradiated with an ion beam from an oblique direction. As a result, ion milling is performed for a relatively long time, and therefore, the insulating layer 9 is dug deeper deeply based on the etching action in the vertical direction during the ion milling (a relatively deep recess 9H is formed in the insulating layer 9). Is). That is, the relationship between the depth of the depression 9H and the surface irregularity state of the insulating layer 55 (a film forming process in which the depression 55H is deeper when the insulating layer 55 is formed as the depression 9H formed in the insulating layer 9 is deeper). Between the structural characteristics before polishing of the object to be polished (here, the insulating layers 11 and 12 together with the insulating layer 55 provided with the recess 55H) and the planarized state after polishing. (Technical technology based on the viewpoint of a polishing process in which the thickness of the object to be polished is larger and the depth of the depression provided in the object to be polished is deeper, and the object to be polished becomes difficult to flatten after polishing) Considering both of these, the method of manufacturing the thin film magnetic head according to the present embodiment is useful when the depth of the recess 9H is relatively deeper than when the depth is relatively shallow.

  For reference, the degree of effect obtained based on the method of manufacturing a thin film magnetic head according to the present embodiment will be described. If this method of manufacturing a thin film magnetic head is used, the depth of the recess 9H will be described. The variation in the formation thickness T of the main magnetic pole layer 10 can be suppressed so as to be approximately the same as that in the case of relatively shallow. The reason is as follows.

  19 to 23 are for explaining a method of manufacturing a thin film magnetic head as a reference example for the method of manufacturing a thin film magnetic head according to the present embodiment. The method of manufacturing a thin film magnetic head according to the present embodiment is illustrated in FIGS. The process corresponding to FIGS. 4-13 in FIG. The manufacturing method of the thin film magnetic head of this reference example is the present embodiment in which the main magnetic pole layer 10 is formed through two steps of etching processes (the etching process of the precursor magnetic pole layer 10Z1 and the etching process of the precursor magnetic pole layer pattern 10Z2). Unlike the thin-film magnetic head manufacturing method according to the first embodiment, the main magnetic pole layer 10 is formed through a one-step etching process. Specifically, (1) a plated film is grown using the photoresist pattern 61. Thus, the precursor magnetic pole layer pattern 100Z is formed so that the tip portion 100ZA has an inverted trapezoidal cross-sectional shape, and the precursor magnetic pole layer pattern 100ZX is also formed (see FIG. 19), and (2) the photoresist pattern 61 Then, the precursor magnetic pole layer patterns 100Z and 100ZX are etched by ion milling to remove the tip. The main magnetic pole layer 10 is formed so as to include the portion 10A, and the magnetic pole layer pattern 10X is formed at the same time, and the depression 9H is formed in the insulating layer 9 (see FIGS. 20 and 21), and (3) the magnetic pole layer pattern 10X Then, the insulating layer 11, the stopper layer 53, and the insulating layer 55 are formed so as to cover the main magnetic pole layer 10 and the surrounding insulating layer 9 (see FIG. 22). (4) The stopper layer 53 is formed. The insulating layers 11 and 55 are polished while controlling the degree of progress of the polishing process by using (see FIG. 23). In this case, in order to process the tip end portion 100ZA of the precursor magnetic pole layer pattern 100Z, the precursor magnetic pole layer pattern 100Z is irradiated with an ion beam from an oblique direction, whereby ions are emitted over a relatively short time. Since the milling is performed, the insulating layer 9 is dug relatively shallowly based on the etching action in the vertical direction during the ion milling (a relatively shallow depression 9H is formed in the insulating layer 9). The depth of the hollow 55H to be made becomes relatively shallow. Specifically, the depth of the recess 9H in this case is, for example, about 0.5 μm. Thus, in the method of manufacturing the thin film magnetic head of the reference example, the insulating layer 11 is not exposed until the stopper layer 53 is exposed without forming the insulating layer 12 and the stopper layer 54 between the stopper layer 53 and the insulating layer 55. , 55 is sufficiently polished, the unevenness caused by the depression 55H (specifically, the concave portion) is sufficiently relaxed, so that the main magnetic pole layer 10 is not excessively polished together with the insulating layers 11 and 55 in the central region C. That is, since the insulating layers 11 and 55 and the main magnetic pole layer 10 are substantially flattened, the formation thickness T of the main magnetic pole layer 10 is difficult to deviate from the target formation thickness. In this case, the variation in the formation thickness T of the main magnetic pole layer 10 is, for example, about 30 to 60 nm. Therefore, when the variation in the formation thickness T in the case of the reference example (= about 30 nm to 60 nm) is compared with the variation in the formation thickness T in the case of the present embodiment (= about 50 nm), the formation thickness T Therefore, by using the method of manufacturing the thin film magnetic head according to the present embodiment, the main magnetic pole layer 10 is made substantially the same as the case where the depth of the recess 9H is relatively shallow. Therefore, it is possible to suppress the variation in the formation thickness T.

  In addition to the above, in this embodiment, since the progress of the polishing process for the insulating layers 11, 12, 55 is controlled using the stopper layers 53, 54, a plurality of thin film magnetic heads are formed on the wafer 201. In the case where 202 are formed in parallel, the amount of polishing of the insulating layers 11, 12, and 55 is almost uniform between the thin film magnetic heads 202. Therefore, as described above, when the insulating layers 11, 12, 55 are polished, the polishing process becomes difficult to proceed further when the stopper layers 53, 54 are reached. Therefore, the polishing process is performed for an extremely long time. Unless the process is performed (unless the polishing process is excessively performed until the stopper layers 53 and 54 disappear), the progress of the polishing process can be appropriately controlled regardless of the processing time.

  In the present embodiment, since the used stopper layers 53 and 54 are removed, the stopper layers 53 and 54 do not remain in the completed thin film magnetic head. In this case, it is possible to prevent the occurrence of problems caused by the remaining unnecessary stopper layers 53 and 54, for example, unintentional energization of the main magnetic pole layer 10 through the stopper layers 53 and 54.

  In the present embodiment, when the stopper layers 53 and 54 having a two-stage structure are used, the upper stopper layer 54 is formed so as to have a thickness equal to or greater than the thickness of the lower stopper layer 53. In the case where the insulating layers 12 and 55 are polished while controlling the progress of the polishing process using the stopper layer 54, it is assumed that the polishing process is excessively performed on the insulating layers 12 and 55 unintentionally. However, the stopper layer 54 is not easily lost due to the influence of the polishing process. In this case, since the stopper layer 54 has a smaller thickness than the stopper layer 53, the stopper layer 54 is used unlike the case where the stopper layer 54 is easily lost due to the influence of the polishing process. Thus, the insulating layers 12 and 55 can be sufficiently polished while controlling the degree of progress of the polishing process, that is, the unevenness caused by the depression 55H provided in the insulating layer 55 through the polishing process can be sufficiently relaxed. Is possible. Accordingly, this aspect can also contribute to suppressing variations in the formation thickness T of the main magnetic pole layer 10.

  In particular, in the method of manufacturing an electronic component according to the present embodiment, in a state where the electronic device (main magnetic pole layer 10) is formed on the base layer (insulating layer 9) and the recess (depression 9H) is formed in the base layer. (1) A lowermost insulating layer (insulating layer 11) and a lowermost stopper layer (stopper layer 53) are formed so as to cover the base layer and the electronic device, and (2) an intermediate insulating layer (insulating layer 12) and an intermediate stopper Laminate by repeatedly forming a combination of layers (stopper layer 54) over one stage or two or more stages, specifically, laminating by forming only one combination of intermediate insulating layer and intermediate stopper layer, (3) After the uppermost insulating layer (insulating layer 55) is formed, (4) the lowermost stopper layer is exposed while the intermediate stopper layer is sequentially exposed and the exposed intermediate stopper layer is sequentially removed. Since the lowermost insulating layer, the intermediate insulating layer, and the uppermost insulating layer are sequentially polished, the uppermost insulating layer is provided in the polishing process based on the same operation as described above with respect to the method of manufacturing the thin film magnetic head. As a result of sufficiently relaxing unevenness (specifically, recesses) due to the presence of the depressions, the formation thickness of the electronic device is less likely to deviate from the target formation thickness at the time of completion of the polishing process. Accordingly, when a plurality of electronic components are formed in parallel on the substrate, the thickness of the electronic devices is less likely to vary between the electronic components, and therefore the variation in the thickness of the electronic devices is suppressed as much as possible. Thus, electronic parts can be mass-produced stably.

  In the present embodiment, as shown in FIG. 4, the mask 52 is formed by growing a plating film, but the present invention is not limited to this. For example, similarly to the method of forming the main magnetic pole layer 10, the mask 52 may be formed by forming a magnetic material layer and then patterning the magnetic material layer by etching. Also in this case, since the mask 52 can be formed to have a desired pattern shape, the same effect as the above embodiment can be obtained.

  In the present embodiment, as shown in FIGS. 9 to 13, the insulating layer 11 (depression 11H), the stopper layer 53, and the insulating layer 12 cover the main magnetic pole layer 10 and the insulating layer 9 (depression 9H). After forming the recess 12H, the stopper layer 54, and the insulating layer 55 (depression 55H), the insulating layers 11, 12, 55 are controlled while controlling the progress of the polishing process using the stopper layers 53, 54 having a two-stage structure. More specifically, the insulating layers 12 and 55 are polished while using the stopper layer 54 in the first stage polishing process, and the insulating layers 11 and 55 are used while using the stopper layer 53 in the second stage polishing process. However, the present invention is not necessarily limited to this. For example, the thickness of each of the insulating layers 11, 12, and 55 and the depth of each of the recesses 11H, 12H, and 55H in the series of steps described above. And conditions including polished to be polished in the polishing process of each stage (which of the insulating layer 11,12,55 is polished) can be freely changed. Regardless of how these conditions are set, the same effects as those of the above embodiment can be obtained as long as the unevenness caused by the recess 55H provided in the insulating layer 55 can be sufficiently relaxed through the polishing process. Can be obtained.

  Further, in the present embodiment, as shown in FIGS. 9 to 13, the stopper layer is provided in two stages, and the polishing process is performed by using the stopper layer (in this case, the stopper layers 53 and 54, for example) having the two-stage structure. The insulating layer (here, for example, the insulating layers 11, 12, and 55) is polished while controlling the degree of progress of the step, but the present invention is not necessarily limited to this. For example, the number of stages of the stopper layer is two or more. The range can be freely changed. Even when the configuration of the number of steps of the stopper layer is changed, the same effect as in the above embodiment can be obtained. In particular, when the number of stopper layers is set to three or more, the number of steps for forming the stopper layer is increased, but the unevenness caused by the deep depression provided in the insulating layer through the polishing process is further alleviated. Therefore, variation in the formation thickness T of the main magnetic pole layer 10 can be further suppressed. The above-described change in the number of stopper layers is not limited to the method of manufacturing the thin film magnetic head, and the same applies to the method of manufacturing the electronic component (the number of steps in the combination of the intermediate insulating layer and the intermediate stopper layer).

  While the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment, and various modifications can be made. Specifically, for example, in the above-described embodiment, the case where the present invention is applied to a method for manufacturing a shield type head has been described. However, the present invention is not necessarily limited to this, and a single pole type head or a ring type head is manufactured. You may apply to the method. In the above-described embodiment, the case where the present invention is applied to the method of manufacturing a composite thin film magnetic head has been described. However, the present invention is not limited to this. For example, a recording having an inductive magnetic transducer for writing. The present invention can also be applied to a method for manufacturing a dedicated thin film magnetic head and a method for manufacturing a thin film magnetic head having an inductive magnetic transducer for both recording and reproduction. Of course, the present invention can also be applied to a method of manufacturing a thin film magnetic head having a structure in which the stacking order of the writing element and the reading element is reversed.

  In the above embodiment, the case where the present invention is applied to a method for manufacturing a perpendicular recording type thin film magnetic head has been described. However, the present invention is not necessarily limited to this, and the present invention is not limited to a longitudinal recording type thin film magnetic head. It is also possible to apply to a manufacturing method.

  In the above embodiment, the method for manufacturing an electronic component of the present invention is applied to a method for manufacturing a thin film magnetic head. However, the method is not necessarily limited to this, and the method for manufacturing an electronic component of the present invention is not limited to a thin film magnetic head. It is also possible to apply to the manufacturing method of other electronic components. Even in this case, since it is possible to suppress the variation in the formation thickness of the electronic device constituting the electronic component as much as possible, the same effect as the above embodiment can be obtained.

It is sectional drawing showing the cross-sectional structure of the thin film magnetic head manufactured by the manufacturing method of the thin film magnetic head which concerns on one embodiment of this invention. FIG. 2 is a plan view illustrating a planar configuration of a main part of the thin film magnetic head illustrated in FIG. 1. It is a top view which expands and represents the plane structure of the exposed surface of a pole layer. It is sectional drawing for demonstrating one manufacturing process regarding the manufacturing method of the thin film magnetic head which concerns on one embodiment of this invention. FIG. 5 is a cross-sectional view for explaining a step following the step in FIG. 4. FIG. 6 is a cross-sectional view for explaining a step following the step in FIG. 5. FIG. 7 is a cross-sectional view for explaining a step following the step in FIG. 6. FIG. 8 is a cross-sectional view for explaining a step following the step in FIG. 7. FIG. 9 is a cross-sectional view for explaining a step following the step in FIG. 8. FIG. 10 is a cross-sectional view for explaining a step following the step in FIG. 9. It is sectional drawing for demonstrating the process following FIG. FIG. 12 is a cross-sectional view for explaining a process following the process in FIG. 11. It is sectional drawing for demonstrating the process following FIG. It is sectional drawing for demonstrating the process following FIG. It is a top view showing the plane structure of the principal part of the thin film magnetic head in the middle of manufacture. It is a top view for demonstrating the mass production process of a thin film magnetic head. It is sectional drawing for demonstrating one manufacturing process regarding the manufacturing method of the thin film magnetic head of the comparative example with respect to the manufacturing method of the thin film magnetic head which concerns on one embodiment of this invention. FIG. 18 is a cross-sectional view for explaining a process following the process in FIG. 17. It is sectional drawing for demonstrating one manufacturing process regarding the manufacturing method of the thin film magnetic head of the reference example with respect to the manufacturing method of the thin film magnetic head which concerns on one embodiment of this invention. FIG. 20 is a cross-sectional view for explaining a process following the process in FIG. 19. FIG. 21 is a cross-sectional view for illustrating a process following the process in FIG. 20. FIG. 22 is a cross-sectional view for illustrating a process following the process in FIG. 21. FIG. 23 is a cross-sectional view for illustrating a process following the process in FIG. 22.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Substrate, 2, 9, 11, 12, 15, 55 ... Insulating layer, 3 ... Lower lead shield layer, 4 ... Shield gap film, 5 ... Upper lead shield layer, 6 ... MR element, 7 ... Separation layer, 8 Auxiliary magnetic pole layer, 9H, 11H, 12H, 55H ... depression, 10 ... main magnetic pole layer, 10A, 10Z2A, 52A ... front end, 10B ... rear end, 10X ... magnetic pole layer pattern, 10Z1 ... precursor magnetic pole layer, 10Z2, 10Z2X: Precursor magnetic pole layer pattern, 13 ... Gap layer, 13BG ... Back gap, 14 ... Thin film coil, 16 ... TH defining layer, 17 ... Yoke layer, 18 ... Overcoat layer, 20 ... Magnetic pole layer, 30 ... Write shield layer, 40 ... Air bearing surface, 51, 51X, 52, 52X, 60 ... Mask, 51Z ... Precursor mask layer, 53, 54 ... Stopper layer, 100A ... Reproducing head section, 100B ... Head part, 201 ... wafer, 202 ... thin film magnetic head, C ... central region, D ... medium traveling direction, E1 ... upper edge, E2 ... lower edge, E3 ... side edge, FP ... flare point, LE ... leading edge, M: exposed surface, R: forming region, S: peripheral region, T: forming thickness, TE: trailing edge, TH: throat height, TP: throat height zero position.

Claims (11)

A thin film coil that generates magnetic flux and a magnetic pole layer that extends rearward from the recording medium facing surface facing the recording medium moving in the medium traveling direction and emits the magnetic flux generated in the thin film coil toward the recording medium A method of manufacturing a thin film magnetic head comprising:
Patterning the pole layer on the underlayer, and forming a recess in the underlayer along the pole layer;
A second step of forming a first insulating layer so as to cover the base layer in the magnetic pole layer and its peripheral region;
A third step of patterning a first stopper layer for controlling the progress of a polishing process on the first insulating layer in the peripheral region of the pole layer;
A fourth step of forming a second insulating layer so as to cover the first stopper layer and the first insulating layer in the peripheral region;
A fifth step of patterning a second stopper layer for controlling the progress of the polishing process on the second insulating layer in the peripheral region of the pole layer;
A sixth step of forming a third insulating layer so as to cover the second stopper layer and the second insulating layer in the peripheral region;
A seventh step of polishing at least the third insulating layer until the second stopper layer is exposed;
An eighth step of removing the exposed second stopper layer;
A ninth step of polishing at least the first and second insulating layers until the first stopper layer is exposed;
And a tenth step of removing the exposed first stopper layer. A method of manufacturing a thin film magnetic head, comprising: In the first step, the magnetic pole layer is formed so as to include a magnetic pole tip portion that defines a recording track width of the recording medium,
The first step is
Forming a precursor magnetic pole layer pattern on the underlayer so that a portion corresponding to the magnetic pole tip portion has a width larger than that of the magnetic pole tip portion;
The precursor magnetic pole layer pattern is etched together with the underlayer, and the width of the portion corresponding to the magnetic pole tip portion of the precursor magnetic pole layer pattern is gradually reduced, so that the width of the magnetic pole tip portion is reduced from the medium traveling direction side. The magnetic pole layer is formed so as to gradually narrow toward the opposite side to the medium traveling direction side, and the underlayer is selectively dug along the precursor magnetic pole layer pattern so that both sides of the magnetic pole layer are sandwiched. The method of manufacturing a thin film magnetic head according to claim 1, further comprising: forming the recess so as to be disposed. 3. The method of manufacturing a thin film magnetic head according to claim 2, wherein the precursor magnetic pole layer is formed on the underlayer, and then the precursor magnetic pole layer is etched and patterned to form the precursor magnetic pole layer pattern. . In the second, fourth and sixth steps, the first, second and third insulations are made using aluminum oxide (Al ₂ O ₃ ), silicon oxide (SiO ₂ ) or aluminum nitride (AlN). The method of manufacturing a thin film magnetic head according to claim 1, wherein a layer is formed. In the third and fifth steps, the first and second stopper layers are formed using a material whose polishing rate is slower than that of the first, second and third insulating layers. The method of manufacturing a thin film magnetic head according to claim 1. The first and second stopper layers are formed using tantalum (Ta), chromium (Cr), carbon (C), molybdenum (Mo), tungsten (W), or an alloy thereof. 6. A method of manufacturing a thin film magnetic head according to claim 5. The said 2nd stopper layer is formed so that it may have the thickness more than the thickness of the said 1st stopper layer in the said 5th process. Any one of Claim 1 thru | or 6 characterized by the above-mentioned. A method for manufacturing the thin film magnetic head according to the item. The magnetic pole layer is formed in the first step so as to emit a magnetic flux for magnetizing the recording medium in a direction perpendicular to the surface thereof. 2. A method for manufacturing a thin film magnetic head according to item 1. 9. The thin film according to claim 1, wherein a plurality of thin film magnetic heads are formed in parallel by forming a plurality of the magnetic pole layers in parallel on the substrate. Manufacturing method of magnetic head. A method of manufacturing an electronic component comprising an electronic device,
Patterning the electronic device on the underlayer, and forming a recess in the underlayer along the electronic device;
A second step of forming a lowermost insulating layer so as to cover the base layer of the electronic device and its peripheral region;
A third step of patterning a lowermost stopper layer for controlling the progress of a polishing process on the lowermost insulating layer in the peripheral region of the electronic device;
On the lowermost insulating layer in the lowermost stopper layer and its peripheral region, an intermediate insulating layer covering the region corresponding to the lowermost stopper layer and the lowermost insulating layer, and the intermediate insulation in the peripheral region of the electronic device A fourth step of laminating by repeatedly forming a combination with an intermediate stopper layer arranged in a corresponding region on the layer and controlling the progress of the polishing process over one step or two or more steps;
A fifth step of forming the uppermost insulating layer so as to cover the uppermost intermediate stopper layer and the uppermost intermediate insulating layer in the peripheral region;
The lower insulating layer, the intermediate insulating layer, and the uppermost insulating layer are sequentially polished until the lowermost stopper layer is exposed while sequentially exposing the intermediate stopper layer and removing the exposed intermediate stopper layer. A sixth step;
And a seventh step of removing the exposed lowermost stopper layer. A method of manufacturing an electronic component, comprising: The method of manufacturing an electronic component according to claim 10, wherein a plurality of electronic components are formed in parallel by forming a plurality of the electronic devices in parallel on the substrate.

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