JP2005272969A - Vacuum vapor deposition system and vacuum vapor deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition system in which the influence of the contamination to a vapor deposition film can be reduced based on the finding on a relation between the contamination and the pressure in a chamber in a vapor deposition process. <P>SOLUTION: The phenomenon that the adsorption of organic materials drastically lowers as compared with the case the gaseous pressure in the chamber is maintained in a viscous flow region and the case the pressure is maintained in a molecular flow region is found and based on the phenomenon, the gaseous pressure is so controlled as to be maintained in the molecular flow region at the time of forming the vapor deposited thin film and to be maintained in the viscous flow region at the time of the non-deposition, and thereby the vapor deposited thin film can be formed with the reduced contamination with the organic materials. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a reduced-pressure deposition apparatus and a reduced-pressure deposition method that are free from organic contamination and form a film under a pressure lower than atmospheric pressure.

  Generally, the vapor deposition apparatus includes an atmospheric pressure vapor deposition apparatus and a vacuum vapor deposition apparatus. Of these, the atmospheric pressure vapor deposition apparatus is an apparatus in which vapor deposition is performed in a chamber maintained at atmospheric pressure, while the low pressure vapor deposition apparatus is a chamber. This is an apparatus for evaporating the raw material filled in the evaporating dish in a state where the internal pressure is much lower than the atmospheric pressure, and forming a vapor deposition film on the substrate. Since the atmospheric pressure vapor deposition apparatus performs vapor deposition in an atmospheric pressure with a lot of gas molecules, it can form a vapor deposition film at a high growth rate, but it has a drawback that it is bad in terms of uniformity of the vapor deposition film.

  On the other hand, the vacuum deposition apparatus has the advantage that the gas concentration is uniform and the thickness of the deposited film is uniform over a wide range as a result of the collision between gas molecules being reduced because the pressure in the chamber is low. doing. In recent years, low-pressure deposition equipment that can form uniform films with high integration and ultra-miniaturization of electronic devices such as semiconductor devices and flat panel display devices manufactured with a film deposition process using a deposition device has attracted attention. Has been.

  Even in such a vacuum deposition apparatus, it has been pointed out that when the device is required to be highly precise, slight contamination of the deposited film and the device becomes a problem. For example, Japanese Patent Application Laid-Open No. 9-186057 (Patent Document 1) points out that there is a serious influence on devices due to molecular contaminants. For this reason, the cause of semiconductor element failures due to molecular contaminants Investigations and methods for facilitating analysis of failure occurrence mechanisms have been proposed. As a technique for this purpose, Patent Document 1 proposes a vapor deposition apparatus for controlling or adhering foreign matter to a wafer in a controllable manner in order to be able to set the level of contamination control and the process influence limit value of the contaminant. That is, the proposed vapor deposition apparatus can analyze the influence of contaminants by actively depositing various impurities generated in the manufacturing process on the wafer by substance and concentration.

  On the other hand, in JP-A-8-32448 (Patent Document 2), when a turbo molecular pump is used in the exhaust system, impurities are mixed into the formed thin film, which adversely affects the characteristics of the semiconductor element. Has been pointed out. For this reason, Patent Document 2 investigated that the cause is that the gas molecules once exhausted and the impurity gas existing on the exhaust side of the turbo molecular pump are diffused back into the chamber. We have proposed a vacuum exhaust system that can prevent this.

Japanese Patent Laid-Open No. 9-186057 JP-A-8-32448

  Patent Document 1 only discloses that the effects of contaminants are analyzed by depositing impurities on a wafer by substance and concentration, and does not point out a method and apparatus for reducing impurity contamination. .

  In Patent Document 2, an auxiliary pump is connected to the exhaust side of the turbo molecular pump and gas is introduced between the turbo molecular pump and the auxiliary pump in order to prevent the backflow of the impurity gas exhausted from the exhaust device. This indicates that the inside of the chamber can be evacuated to prevent back diffusion of impurities from the exhaust side of the turbo molecular pump to the intake side. However, Patent Document 2 only proposes to prevent the backflow of impurities from the exhaust device, and does not point out anything about reducing or preventing contamination caused by impurities, particularly organic substances, during the vapor deposition process. Absent.

  The objective of this invention is providing the vapor deposition apparatus which can reduce the influence of the contamination with respect to a vapor deposition film based on the knowledge about the relationship between the contamination in a vapor deposition process, and the pressure in a chamber.

  Another object of the present invention is to provide a vapor deposition apparatus capable of reducing adhesion of impurities, particularly organic substances.

  Still another object of the present invention is to provide a vapor deposition method that can reduce contamination by organic matter.

  A more specific object of the present invention is to provide a vacuum deposition apparatus, in particular, a vacuum deposition apparatus, which is free from organic contamination and does not cause molecular dissociation / decomposition.

  According to one aspect of the present invention, in a vapor deposition apparatus having a vapor deposition dish in a chamber, the vapor deposition thin film forming atmosphere is set to the gas pressure in the molecular flow region when the vapor deposition thin film is formed, and the atmospheric pressure is maintained for a certain period when the vapor deposition thin film is not formed. A reduced-pressure vapor deposition apparatus characterized by being made to have a gas pressure in a viscous flow region is obtained.

  Here, it is desirable that the gas pressure at which the atmosphere at the time of forming the deposited thin film becomes a molecular flow region is approximately 1 mTorr or less, and the gas pressure at which the atmosphere at the time of forming the deposited film is a viscous flow region is approximately 1 Torr or higher.

  According to a more specific aspect of the present invention, a chamber in which a gas exhaust primary pump and a roughing pump are connected, and a gas supply pipe for supplying a high-purity inert gas such as argon, nitrogen, krypton, or xenon is connected. In a vapor deposition apparatus equipped with a heating mechanism and a vapor deposition pan, the vapor deposition thin film formation atmosphere is set to the gas pressure in the molecular flow region when the vapor deposition thin film is formed, and the atmospheric pressure is the gas pressure in the viscous flow region for a certain period when the vapor deposition thin film is not formed. Thus, a reduced-pressure deposition apparatus characterized in that is obtained.

  According to a more specific aspect of the present invention, in a chamber having a stage on which a substrate is mounted and a vapor deposition dish provided with a heating mechanism for mounting a vapor deposition material, a gas exhaust primary pump and the primary pump are roughly connected in series. A suction pump is connected directly or via another pump such as a screw booster pump, and an inert purge gas is allowed to flow through the outlet-side purge port of the primary pump. A vacuum deposition apparatus in which a connection portion with a pump is set to a pressure at which a viscous flow region is set, and an inert gas supply pipe is connected to the chamber is obtained. The connecting portion between the inert gas supply pipe and the chamber is formed to include an orifice, a valve is provided upstream of the orifice, and a pressure regulator and a pressure gauge are installed upstream of the valve. Are preferable.

  The present invention also includes a chamber for accommodating a substrate on which a deposition film is to be formed, and a gas pressure adjusting means for maintaining the pressure in the chamber in the molecular flow region and changing the molecular flow region to the viscous flow region. Provided is a reduced-pressure deposition apparatus characterized by reducing contamination on the deposited film. The gas pressure adjusting means includes a pipe for introducing gas into the chamber, a gas flow rate control means for adjusting a flow rate of gas supplied from the pipe to the chamber, and a pump means for exhausting the gas in the chamber. By controlling the gas flow rate control means and the pump means, the gas pressure in the molecular flow area and the viscous flow area can be realized. Moreover, it is preferable that the chamber includes a vapor deposition tray on which a raw material to be deposited is placed, a support for holding the substrate, and a means for heating the vapor deposition tray.

  According to the present invention as described above, a vacuum deposition apparatus suitable for depositing an organic EL material sensitive to contamination can be obtained.

  According to another aspect of the present invention, there is provided a vapor deposition method for performing a vapor deposition process in a chamber capable of varying an internal pressure, the first step of maintaining the pressure in the chamber in a molecular flow region, and a viscosity from the molecular flow region. And a second step of changing to a basin, thereby obtaining a reduced pressure deposition method characterized by reducing contamination. It is preferable that vapor deposition is performed during the first step, and the second step is performed during a period when vapor deposition is not performed. In the first step, the gas pressure in the chamber is different between the first step and the second step, and the gas pressure in the second step is higher than the gas pressure in the first step. Is maintained in the molecular flow region by setting the gas pressure in the chamber to 0.1 mTorr to 1 mTorr, and in the second step, the gas pressure in the chamber is set to be 1 Torr or more to be the viscous flow region. The gas pressure in the second step is preferably 10 Torr or more. By allowing an inert gas to be supplied to the chamber and exhausting the chamber, controlling the gas flow rate of the supplied inert gas and controlling the exhaust speed of the exhaust The gas pressure in the molecular flow region and the viscous flow region can be realized.

  Further, according to the present invention, the pressure of the vapor deposition film forming atmosphere is set to the gas pressure of the molecular flow region when forming the vapor deposition film, and the atmospheric pressure is set to the gas pressure of the viscous flow region at least for a certain period when the vapor deposition film is not formed. A vacuum deposition method is obtained. The gas pressure in the molecular flow region when forming the vapor deposition film is about 1 mTorr or less, and the gas pressure in the viscous flow region when the vapor deposition film is not formed is about 1 Torr or more, and the atmosphere when the vapor deposition film is formed and when the vapor deposition film is not formed It is preferable that the main component is at least one inert gas of high purity nitrogen, argon, xenon and krypton.

  An organic EL device comprising: a method of depositing an organic EL film using the above-described reduced-pressure deposition method; and a step of depositing an organic EL film using the above-described reduced-pressure deposition method. The present invention also provides a method for manufacturing an electronic device, further comprising a step of forming a film using the above-described reduced-pressure deposition method.

  According to the present invention, it is found that the amount of adsorption of impurities, in particular, the organic substance on the substrate changes between the molecular flow region and the viscous flow region in the chamber in which the vapor deposition is performed. Decrease the amount of adsorption. More specifically, in the present invention, the vapor deposition is performed at the gas pressure in the molecular flow region, and the gas pressure period in the viscous flow region where the adsorption of the organic matter is small is provided, thereby reducing contamination by the organic adsorbate and the like.

  The present invention can be applied not only when a single layer is formed, but also when a multilayer film such as Al is deposited.

  With reference to FIG. 1, the experiment and the result which become the foundation of this invention are demonstrated. First, a semiconductor to be decompressed or a glass substrate is carried into a deposition chamber where vacuum deposition is performed, and the pressure in the deposition chamber and the organic matter adsorbed on the substrate are changed by changing the pressure in the deposition chamber. The relationship with quantity was investigated. In the experiment, a cluster type vacuum apparatus having a load lock chamber for loading and unloading a substrate such as a semiconductor substrate and a deposition chamber for performing vacuum deposition was used. Here, the vapor deposition chamber is a main component of the vacuum deposition apparatus.

  The horizontal axis of FIG. 1 indicates the exposure time, and the vertical axis indicates the amount of organic matter adsorbed on the substrate. Here, the organic substance adsorption amount shown on the vertical axis is expressed in the form of an amount obtained by converting all organic substances into hexadecane having a molecular weight of 226.45. In FIG. 1, the black dots are the results of measuring the amount of organic matter adsorbed on the substrate in a process chamber maintained at a low pressure of 1 mTorr or less, and the white dots are adsorbed on the substrate in a process chamber maintained at atmospheric pressure. It is the result of measuring the organic matter adsorption amount.

  As is clear from FIG. 1, in the chamber maintained at a low pressure of 1 mTorr or less, the amount of organic matter adsorbed on the substrate is large and increases rapidly with time. On the other hand, in the chamber maintained at atmospheric pressure, it can be seen that even if the substrate is exposed for 1 hour, almost no organic matter is adsorbed. This is presumed that the lower the pressure in the chamber, the larger the amount of organic matter adsorbed to the substrate, and the lower the pressure in the chamber, the lower the amount of organic matter adsorbed.

  FIG. 2 shows experimental results based on the above prediction. Here, the amount obtained by converting the organic carbon adsorbed on the substrate into n-icosane with the pressure in the chamber being 90 Torr, 10 Torr, and 3 Torr is shown as the organic matter adsorption amount. As is clear from FIG. 2, the organic matter adsorption amount is the smallest at 90 Torr, and the organic matter adsorption amount increases in the order of 10 Torr and 3 Torr. Therefore, it was found that the amount of adsorbed organic matter can be reduced by increasing the pressure even in a reduced pressure state lower than the atmospheric pressure.

  With reference to FIG. 3, the vapor deposition apparatus which concerns on the Example of this invention is demonstrated. The illustrated vapor deposition apparatus is connected to a processing chamber (deposition chamber) 21 for performing a vapor deposition process and a substrate such as a semiconductor substrate or a glass substrate between the processing chamber 21 and the processing chamber 21. And a substrate introduction chamber (load lock chamber) 31 for taking in and out 25.

  Further, the substrate introduction chamber 31 is provided with a substrate introduction door 34, and the substrate is introduced into the substrate introduction chamber 31 through the substrate introduction door 34, and is carried out of the substrate introduction chamber 31. A primary pump 32 and a secondary pump 33 are connected to the substrate introduction chamber 31 via a pump gate valve 38, and a pump purge gas is introduced between the primary pump 32 and the secondary pump 33. A mechanism 37 is connected. This pump purge gas introduction mechanism 37 is useful for suppressing back diffusion of impurities from the secondary pump 33.

  On the other hand, a primary pump 22 and a secondary pump 23 are connected to the processing chamber 21 via a pump gate valve 28, and a pump purge gas is introduced between the primary pump 22 and the secondary pump 23. A mechanism 27 is connected, and the pump purge gas introduction mechanism 27 also performs an operation of suppressing the reverse diffusion of impurities from the secondary pump 23. Further, a vapor deposition source chamber 41 is provided below the processing chamber 21 via a shutter mechanism 44, and the vapor deposition source chamber 41 has an evaporation source (for example, organic EL in the case of manufacturing an organic EL display device). In the manufacture of materials and semiconductor devices, a deposition source container (deposition dish) 42 and a heater 43 filled with a material to be deposited by deposition such as Al) are provided, and the heater 43 contains the deposition source container 42. Heat the deposition material. The shutter mechanism 44 is opened at the time of vapor deposition, and is closed at a time when vapor deposition is unnecessary to block vapor deposition. While the shutter mechanism 44 is open, the deposition material in the deposition source container 42 is heated by the heater 43 to evaporate and is deposited on the substrate 25 attached to the substrate holder 26 in the processing chamber 21.

  Furthermore, the illustrated processing chamber 21 is provided with a processing chamber gas introduction mechanism 29 for introducing a gas into the processing chamber 21 as a gas flow rate adjusting device. The processing chamber gas introduction mechanism 29 is provided in the processing chamber 21. As described later, necessary gas is introduced to keep the inside of the processing chamber 21 in the molecular flow region or the viscous flow region. In the illustrated example, gaskets 52, 53, 54, 55, 56, 57, 58, 59, and 60 that are present at the connection portions of the respective parts and are kept airtight are provided. Among these gaskets, gaskets 52 and 56 existing between the substrate introduction door 34 and the substrate introduction chamber 31 and between the vapor deposition source chamber 41 and the shutter mechanism 44 are made of perfluoroelastomer, and the other gaskets 53, 54, 55, 57. , 58, 59, 60 are preferably made of Cu in order to suppress organic substances generated from these gaskets.

  Hereinafter, the operation of the processing chamber (deposition chamber) 21 according to the present invention, that is, the operation of the vacuum deposition apparatus will be mainly described. In this embodiment, the vapor deposition thin film forming atmosphere is set to the gas pressure in the molecular flow region when the vapor deposition thin film is formed, and the atmospheric pressure is set to the gas pressure in the viscous flow region for a certain period when the vapor deposition thin film is not formed. Specifically, in the molecular flow region, the gas pressure in the processing chamber 21 is adjusted to a range of 0.1 mTorr to 1 mTorr, and in the viscous flow region, the gas pressure is adjusted to 1 Torr or more, preferably 10 Torr or more.

  In order to realize the gas pressures in the molecular flow region and the viscous flow region in the processing chamber 21, the flow rate of the introduced gas, particularly in this example, an inert gas such as argon or nitrogen is determined by the processing chamber gas introduction mechanism (gas flow rate). It is controlled by the adjusting device 29, and the exhaust amount of the primary pump 22 and the secondary pump 23 and the gas flow rate flowing to the pump purge gas introduction mechanism 27 are adjusted. A turbo molecular pump can be used as the primary pumps 22 and 32, and an auxiliary pump can be used as the secondary pumps 23 and 33.

Here, when forming a film in the molecular flow region while suppressing the gas pressure in the processing chamber 21 at the time of forming the deposited thin film to about 0.1 × 10 ⁻³ to 1 × 10 ⁻⁵ Torr, the gas introduced into the processing chamber 21. The following equation is established between the flow rate f, the gas pressure P in the processing chamber 21 and the exhaust speed S.

f = 79P (Torr) · S (l / sec)
Here, when the exhaust speed of the primary pump 22 is 1000 l / sec and the gas pressure in the processing chamber 21 is 0.1 to 1 mTorr, the gas flow rate f introduced into the processing chamber 21 is expressed by the following equation. Can do.

f = 79 (1 × 10 ⁻⁴ or 1 × 10 ⁻³ ) 10 ³ (l / sec)
= 7.9 cc / min (0.1 mTorr) or 79 cc / min (1 mTorr).

  That is, in order to set the gas pressure in the processing chamber 21 to the molecular flow region, the flow rate f with respect to the processing chamber 21 may be maintained between 7.9 cc / min and 79 / cc.

On the other hand, when the gas pressure in the processing chamber 21 when the vapor deposition film is not formed is changed from 1 Torr to a viscous flow region of 10 Torr, if the gas flow rate f with respect to the processing chamber 21 is, for example, 10 ³ cc / min, the exhaust speed S is 1 Torr. 12.6 (l / sec) and 1.26 (l / sec) at 10 Torr.

  To this extent, reducing the exhaust speed S means reducing the pump valve 28 between the processing chamber 21 and the primary pump 22 or increasing the gas flow rate flowing to the primary pump 22 and the pump purge gas introduction mechanism 27. Is possible.

  On the other hand, the illustrated processing chamber gas introduction mechanism 29 includes first and second orifices 291 and 292, first to third valves 293 to 295, and a pressure gauge 296. The first and third valves 293 are connected to a generation source for generating an inert gas, here Ar, and in this configuration, the pressure in the processing chamber 21 can be kept constant. For example, the first orifice 291 flows a gas of 1.5 cc / min. At this time, when the second valve 294 is opened, the second orifice 292 flows a gas of 1000 cc / min, thereby keeping the pressure constant. Can be kept in.

  Further, a pressure regulator is provided upstream of the first valve 293 and the third valve 295, and the first and second orifices 291 and 292 are adjusted using the pressure regulator and a pressure gauge. Thus, the pressure of the gas supplied from the first and second orifices 291 and 292 can be kept constant.

  As described above, in the present invention, the pressure in the processing chamber 21 is maintained in the molecular flow region and vapor deposition is performed (first step), while the non-deposition time is changed from the molecular flow region to the viscous flow region (second step). Thus, contamination on the substrate on which the deposited thin film is formed, in particular, contamination with organic substances can be suppressed. In this case, the gas pressure in the processing chamber 21 in the first step can be changed from the molecular flow region to the viscous flow region by making it lower than the gas pressure in the second step.

  As described above, the present invention is widely applied not only to the manufacture of semiconductor devices but also to processes that require film deposition by vapor deposition in the manufacture of electronic devices such as liquid crystal display devices and organic EL devices using glass substrates. It can also be used for film creation.

It is a graph which shows the relationship between organic substance contamination and gas pressure which are the foundations of this invention. It is a graph which shows the relationship between organic substance contamination and gas pressure in the case of actually performing vapor deposition according to the experimental result shown by FIG. It is a block diagram which shows the vacuum apparatus containing the vacuum deposition apparatus which concerns on one Example of this invention.

Explanation of symbols

21 Processing room (deposition chamber)
31 Substrate introduction chamber 22, 32 Primary pump 23, 33 Secondary pump 25 Substrate 26 Substrate holder 28, 38 Pump valve 29 Processing chamber gas introduction mechanism 41 Deposition source chamber 42 Deposition source container (deposition dish)
43 Heater 44 Shutter mechanism 291, 292 Orifice 293-295 Valve 296 Pressure gauge

Claims (25)

  In a vapor deposition apparatus having a vapor deposition dish in a chamber, the pressure of the vapor deposition film forming atmosphere is made the gas pressure in the molecular flow region when the vapor deposition film is formed, and the atmospheric pressure becomes the gas pressure in the viscous flow region at least for a certain period when the vapor deposition film is not formed. A vacuum deposition apparatus characterized by being made.   2. The gas pressure in the molecular flow region at the time of forming the vapor deposition film is about 1 millitorr (mTorr) or less, and the gas pressure in the viscous flow region at the time of forming the vapor deposition film is about 1 Torr or more. A vacuum deposition apparatus characterized by the above.   3. The reduced pressure vapor deposition apparatus according to claim 1, wherein a main component of an atmosphere when the vapor deposition film is formed and when the vapor deposition film is not formed is an inert gas.   4. The vapor deposition apparatus according to claim 3, wherein the vapor deposition apparatus heats the gas exhaust primary pump, a roughing pump connected to the primary pump, a gas supply pipe for supplying the inert gas into the chamber, and the vapor deposition dish. And a vacuum deposition apparatus.   A gas exhaust primary pump is connected to a chamber equipped with a stage for mounting a substrate, a vapor deposition pan for mounting a vapor deposition product, and a heating mechanism for heating the vapor deposition pan, and is connected directly or in series to the primary pump. A vacuum pumping apparatus in which a roughing pump is connected via an inert purge gas flowing through an outlet-side purge port of the primary pump, and the outlet side of the primary pump is set to a pressure that becomes a viscous flow region. A vacuum deposition apparatus, wherein an inert gas supply pipe is connected to the chamber.   6. The vacuum deposition apparatus according to claim 5, wherein the connection portion between the inert gas supply pipe and the chamber is formed including an orifice.   The vacuum deposition apparatus according to claim 6, wherein a valve is provided upstream of the orifice, and a pressure regulator and a pressure gauge are installed upstream of the valve.   8. The vacuum deposition apparatus according to claim 3, wherein the inert gas is at least one of high-purity nitrogen, argon, xenon, and krypton.   A chamber for accommodating a substrate on which a deposited film is to be formed, and a gas pressure adjusting means for maintaining the pressure in the chamber in the molecular flow region and changing the molecular flow region to the viscous flow region, thereby contaminating the deposited film. Reduced pressure evaporation apparatus characterized by reducing   10. The gas pressure adjusting means according to claim 9, wherein the gas pressure adjusting means includes a pipe for introducing a gas into the chamber, a gas flow rate control means for adjusting a flow rate of a gas supplied from the pipe to the chamber, and a gas in the chamber. And a pump means for exhausting the gas, and controlling the gas flow rate control means and the pump means to realize the gas pressure in the molecular flow region and the viscous flow region.   The reduced pressure according to claim 9 or 10, wherein the chamber includes a vapor deposition tray on which a raw material to be deposited is placed, a support for holding the substrate, and means for heating the vapor deposition tray. Vapor deposition equipment.   9. The vacuum evaporation apparatus according to claim 1, wherein an organic EL material is placed on the evaporation dish.   A vapor deposition method for performing a vapor deposition process in a chamber capable of varying an internal pressure, the first step of maintaining the pressure in the chamber in a molecular flow region, and changing the pressure in the chamber from the molecular flow region to a viscous flow region And a second step, thereby reducing contamination of the deposited film.   The vacuum deposition method according to claim 13, wherein vapor deposition is performed during the first step, and the second step is performed during a period when vapor deposition is not performed.   The gas pressure in the chamber is different between the first step and the second step, and the gas pressure in the second step is higher than the gas pressure in the first step. A vacuum deposition method.   The gas pressure in the chamber is maintained in the molecular flow region by setting the gas pressure in the chamber to 0.1 mTorr to 1 mTorr in the first step, and the gas pressure in the chamber is set to 1 Torr in the second step. The reduced-pressure deposition method is characterized in that the viscous flow region is obtained as described above.   The vacuum deposition method according to claim 16, wherein the gas pressure in the second step is 10 Torr or more.   18. The inert gas can be supplied to the chamber and the inside of the chamber can be evacuated to control the flow rate of the supplied inert gas according to claim 13. A vacuum deposition method characterized by realizing the gas pressure in the molecular flow region and the viscous flow region by controlling the exhaust speed of the exhaust gas.   A vacuum deposition method characterized in that when forming a deposited film, the pressure in the atmosphere in which the deposited film is formed is set to the gas pressure in the molecular flow region, and at least for a certain period of time when the deposited film is not formed, the atmospheric pressure is set to the gas pressure in the viscous flow region.   20. The vacuum deposition method according to claim 19, wherein the gas pressure in the molecular flow region when forming the vapor deposition film is about 1 mTorr or less, and the gas pressure in the viscous flow region when not forming the vapor deposition film is about 1 Torr or more.   21. The vacuum deposition method according to claim 19, wherein the main component of the atmosphere when the deposited film is formed and when the deposited film is not formed is an inert gas.   The vacuum deposition method according to claim 18 or 21, wherein the inert gas is at least one of high purity nitrogen, argon, xenon, and krypton.   An organic EL film deposition method, comprising depositing an organic EL film using the vacuum deposition method according to any one of claims 13 to 22.   23. A method of manufacturing an organic EL device, comprising: a step of depositing an organic EL film using the vacuum deposition method described in one of claims 13-22. 23. A method of manufacturing an electronic device, comprising a step of forming a film using the vacuum deposition method according to claim 13.

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