JP2005272207A - Method of manufacturing gallium nitride nanowire coated with gallium oxide layer - Google Patents
Method of manufacturing gallium nitride nanowire coated with gallium oxide layer Download PDFInfo
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- JP2005272207A JP2005272207A JP2004088041A JP2004088041A JP2005272207A JP 2005272207 A JP2005272207 A JP 2005272207A JP 2004088041 A JP2004088041 A JP 2004088041A JP 2004088041 A JP2004088041 A JP 2004088041A JP 2005272207 A JP2005272207 A JP 2005272207A
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- gallium nitride
- oxide layer
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Abstract
Description
この出願の発明は、酸化ガリウム層で被覆された窒化ガリウムナノワイヤーの製造方法に関するものである。さらに詳しくは、この出願の発明は、高温用あるいは高電力用デバイスや青色〜紫外光発光ダイオード等への使用が検討されている酸化ガリウム層で被覆された窒化ガリウムナノワイヤーの製造方法に関するものである。 The invention of this application relates to a method for producing a gallium nitride nanowire covered with a gallium oxide layer. More specifically, the invention of this application relates to a method for producing a gallium nitride nanowire coated with a gallium oxide layer, which is being studied for use in high temperature or high power devices, blue to ultraviolet light emitting diodes, and the like. is there.
バルクおよび薄膜の窒化ガリウムのパッシベーションのための表面酸化は、MOS型電界
効果型トランジスターの作製に必要な技術であり、多くの研究が行われている（たとえば、非特許文献１，２参照。）。また、窒化ガリウムナノワイヤーの電子移動度やp-n接合
に関する研究が、電子デバイスや光学デバイスへの応用を目的として行われている（たとえば、非特許文献３，４参照。）。
この出願の発明は、上記の三次元のバルクや二次元の薄膜ではなく、一次元の窒化ガリウムナノワイヤーの熱酸化によるナノワイヤーの表面が酸化ガリウム層で覆われた窒化ガリウムナノワイヤーの製造方法を提供することを解決すべき課題としている。 The invention of this application is not a three-dimensional bulk or a two-dimensional thin film, but a method for producing a gallium nitride nanowire in which the surface of the nanowire is covered with a gallium oxide layer by thermal oxidation of the one-dimensional gallium nitride nanowire. Providing is an issue to be solved.
この出願の発明は、上記の課題を解決するものとして、直径40〜50ナノメートルの窒化ガリウムナノワイヤーを乾燥空気中で700〜1200℃に12〜24時間加熱することを特徴とす
る酸化ガリウム層で被覆された窒化ガリウムナノワイヤーの製造方法を提供する。
In order to solve the above-mentioned problems, the invention of this application is characterized in that a gallium nitride nanowire having a diameter of 40 to 50 nanometers is heated in a dry air at 700 to 1200 ° C. for 12 to 24 hours. A method for producing a gallium nitride nanowire coated with a metal is provided.
この出願の発明の酸化ガリウム層で被覆された窒化ガリウムナノワイヤーの製造方法によれば、窒化ガリウムのパッシベーション膜の形成に際して、別の材料を使用することなく、表面のみを酸化させることができる。このため、微細構造のエレクトロニクスデバイス用材料として有用である。 According to the method for producing a gallium nitride nanowire covered with a gallium oxide layer of the invention of this application, only the surface can be oxidized without using another material when forming a passivation film of gallium nitride. Therefore, it is useful as a material for an electronic device having a fine structure.
既知の方法で製造した直径40〜50ナノメートルの窒化ガリウムナノワイヤーを乾燥空気中で、700〜1200℃に12〜24時間加熱してナノワイヤーの表面を酸化させる。 A gallium nitride nanowire having a diameter of 40 to 50 nanometers manufactured by a known method is heated in dry air to 700 to 1200 ° C. for 12 to 24 hours to oxidize the surface of the nanowire.
直径40〜50ナノメートルの窒化ガリウムナノワイヤーを用いる理由は、40ナノメートルよりも直径が小さいと、表面だけでなく内部まで酸化されたり、酸化膜が剥離するので好ましくない。直径が50ナノメートル超えると、微小サイズデバイス向きではなくなる。 The reason for using gallium nitride nanowires having a diameter of 40 to 50 nanometers is not preferable if the diameter is smaller than 40 nanometers because not only the surface but also the inside is oxidized or the oxide film is peeled off. When the diameter exceeds 50 nanometers, it is not suitable for micro-sized devices.
加熱温度は700〜1200℃の範囲である。700℃未満の温度では酸化が十分に進行せず、1200℃で酸化が十分に進行するのでこれ以上の温度に上げる必要はない。 The heating temperature is in the range of 700-1200 ° C. Oxidation does not proceed sufficiently at temperatures below 700 ° C, and oxidation proceeds sufficiently at 1200 ° C, so there is no need to raise the temperature further.
加熱時間は、12〜24時間の範囲である。24時間で十分に酸化され、12時間未満では酸化が不十分である。 The heating time is in the range of 12-24 hours. It is fully oxidized in 24 hours, and is insufficiently oxidized in less than 12 hours.
上記の条件で加熱することにより、ナノワイヤーの表面におよそ厚さ10ナノメートルの酸化ガリウム層が形成される。酸化ガリウム層が形成されたことは、X線回折のパターン
を調べることにより確認することができる。
By heating under the above conditions, a gallium oxide layer having a thickness of about 10 nanometers is formed on the surface of the nanowire. The formation of the gallium oxide layer can be confirmed by examining the X-ray diffraction pattern.
次に、実施例を示し、この出願の発明の酸化ガリウム層で被覆された窒化ガリウムナノワイヤーの製造方法についてさらに具体的に説明する。 Next, an example is shown and the manufacturing method of the gallium nitride nanowire covered with the gallium oxide layer of the invention of this application is explained more concretely.
まず、既知の方法（C.C.Tang, et al, Appl.Phys.Lett.77巻、1961頁、2000年に記載）により、ガリウム、二酸化ケイ素、アルミナに担持した酸化鉄の混合物をアンモニア気流中で950℃に加熱して六方晶系の窒化ガリウムナノワイヤーを製造した。
次に、この六方晶系窒化ガリウムナノワイヤーを管状炉に入れ、乾燥空気を200sccmの流
量で流しながら、850℃で24時間加熱した。
First, using a known method (CCTang, et al, Appl. Phys. Lett. 77, 1961, described in 2000), a mixture of gallium, silicon dioxide, and iron oxide supported on alumina was heated to 950 ° C in an ammonia stream. To produce hexagonal gallium nitride nanowires.
Next, this hexagonal gallium nitride nanowire was placed in a tubular furnace and heated at 850 ° C. for 24 hours while flowing dry air at a flow rate of 200 sccm.
図１に、窒化ガリウムナノワイヤーを空気中で850℃、24時間加熱した後のX線回折のパターンを示した。この図１から単斜晶系のβ-型酸化ガリウムの層が形成されていること
が分かる。
FIG. 1 shows an X-ray diffraction pattern after heating gallium nitride nanowires in air at 850 ° C. for 24 hours. It can be seen from FIG. 1 that a monoclinic β-type gallium oxide layer is formed.
図２に、窒化ガリウムナノワイヤーを空気中で850℃、24時間加熱した後の高分解能透
過型電子顕微鏡像の写真を示した。ナノワイヤー全体の直径が50ナノメートルで、酸化ガリウム層の厚さがおよそ10ナノメートルであることが分かる。
FIG. 2 shows a photograph of a high-resolution transmission electron microscope image after heating gallium nitride nanowires in air at 850 ° C. for 24 hours. It can be seen that the overall diameter of the nanowire is 50 nanometers and the thickness of the gallium oxide layer is approximately 10 nanometers.
この出願の発明により、窒化ガリウムナノワイヤーの表面にパッシベーション膜としての酸化ガリウム層を形成させることが可能となったので、MOS型電界効果型トランジスタ
ーへの応用の道が開ける。
The invention of this application makes it possible to form a gallium oxide layer as a passivation film on the surface of a gallium nitride nanowire, thus opening the way to application to a MOS field effect transistor.
Claims (1)
の製造方法。
A method for producing a gallium nitride nanowire covered with a gallium oxide layer, comprising heating a gallium nitride nanowire having a diameter of 40 to 50 nanometers in dry air to 700 to 1200 ° C for 12 to 24 hours.
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| JP2005272207A true JP2005272207A (en) | 2005-10-06 |
| JP4025876B2 JP4025876B2 (en) | 2007-12-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100826308B1 (en) * | 2006-07-25 | 2008-04-30 | 연세대학교 산학협력단 | GaN/Ga2O3 NANO CABLES, FET USING THE NANO CABLES AND METHODES OF PRODUCING THE SAMES |
-
2004
- 2004-03-24 JP JP2004088041A patent/JP4025876B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100826308B1 (en) * | 2006-07-25 | 2008-04-30 | 연세대학교 산학협력단 | GaN/Ga2O3 NANO CABLES, FET USING THE NANO CABLES AND METHODES OF PRODUCING THE SAMES |
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| JP4025876B2 (en) | 2007-12-26 |
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