JP2005268409A - Method for chemically and mechanically polishing slurry for organic film and organic film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for polishing an organic film such as a resist film by low surface defect density. <P>SOLUTION: The method is provided with a process of abutting a semiconductor substrate having the organic film on a polishing cloth pasted onto a turn table, a process of a first polishing process for polishing the organic film by supplying a dispersion solution containing resin particles of ≥0.05 μm and ≤5 μm primary particle diameter onto the polishing cloth, and a second polishing cloth for polishing the organic film by supplying the solution of a surface active agent having a hydrophilic part onto the polishing cloth following the first polishing process. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a chemical mechanical polishing slurry and a polishing method using the same, and more particularly to a chemical mechanical polishing slurry for an organic film such as a resist film and a polishing method using the same.

  In a semiconductor device manufacturing process, a photoresist film is used as a sacrificial film in order to form a desired structure. For example, after forming a trench in a semiconductor substrate or a hole in an insulating film, a sacrificial film is formed by applying a photoresist. A desired structure can be obtained by recessing or peeling the sacrificial film. Such a method is used, for example, to form a buried strap that electrically connects a storage node electrode and a cell transistor diffusion layer in the manufacture of a semiconductor memory device having a trench capacitor.

  In either case, the film thickness of the photoresist film is required to be uniform over the entire wafer. However, when a resist is buried in a trench or hole having a high pattern density, the resist volume on the dense pattern is reduced. For this reason, a variation of the order of several hundred nm occurs between the resist film thickness on the dense pattern and the resist film thickness on the sparse pattern or on the field.

  The film thickness variation of the resist is further enlarged in the recess that is performed thereafter, thereby deteriorating the device shape. In addition, the focal depth is reduced and the yield is deteriorated.

In order to solve the problem caused by the variation in the resist film thickness, a method of planarizing the photoresist by a chemical mechanical polishing method after applying the resist has been proposed (for example, see Patent Document 1). However, since the surface of the photoresist film is hydrophobic, hydrophobic shavings are generated by polishing and stay on the polishing cloth, which causes various problems. For example, the polishing cloth becomes clogged, the polishing rate becomes unstable, and scraps and abrasive particles adhere to the wafer surface, causing surface defects. Further, in the registry access process after CMP, inconvenience such as recess depth variation is caused.
JP 2002-155268 A

  An object of the present invention is to provide a slurry capable of uniformly chemically and mechanically polishing an organic film such as a resist film without causing residue of shavings. Another object of the present invention is to provide a method for polishing an organic film such as a resist film with a low surface defect density.

  The chemical mechanical polishing slurry for an organic film according to one embodiment of the present invention contains resin particles having a primary particle size of 0.05 μm or more and 5 μm or less and a surfactant having a hydrophilic portion.

  A polishing method according to one embodiment of the present invention is a method for chemically and mechanically polishing an organic film deposited on a semiconductor substrate, the organic film being provided on a polishing cloth affixed on a turntable. A step of contacting a semiconductor substrate; and a step of polishing the organic film by supplying the chemical mechanical polishing slurry for an organic film to the polishing cloth.

  A polishing method according to another aspect of the present invention is a method for chemically and mechanically polishing an organic film deposited on a semiconductor substrate, wherein the organic film is applied to a polishing cloth affixed on a turntable. A step of bringing the semiconductor substrate into contact, a first polishing step of polishing the organic film by supplying a dispersion containing resin particles having a primary particle size of 0.05 μm or more and 5 μm or less on the polishing cloth, and Further, following the first polishing step, there is provided a second polishing step of polishing the organic film by supplying a solution of a surfactant having a hydrophilic portion onto the polishing cloth.

  According to one embodiment of the present invention, there is provided a slurry capable of uniformly chemically and mechanically polishing an organic film such as a resist film without retaining shaving residue. According to another aspect of the present invention, a method for polishing an organic film such as a resist film with a low surface defect density is provided.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  The resin particles contained in the chemical mechanical polishing slurry for organic films according to the embodiment of the present invention have a primary particle size limited to 0.05 μm or more and 5 μm or less. The primary particle diameter of the resin particles can be measured by, for example, a dynamic or static light scattering method. When the primary particle size of the resin particles is less than 0.05 μm, the particles easily penetrate into the recesses in which the organic film is embedded, that is, the trenches provided in the semiconductor substrate or the holes provided in the insulating film. Tend to expand. On the other hand, if it exceeds 5 μm, it becomes difficult to control the dispersibility of the particles, and the slurry tends to settle. The primary particle diameter of the resin particles is preferably 0.1 μm or more and 3.0 μm or less.

  The resin particles having such a primary particle diameter are particles selected from the group consisting of methacrylic resins such as PMMA (polymethyl methacrylate), PST (polystyrene) resins, urea resins, melamine resins, polyacetal resins, and polycarbonate resins. Can do. In particular, PMMA or PST resin is preferable because it has hardness and elasticity suitable for CMP.

  In order to improve dispersibility, the resin particles may have a functional group on the surface. The functional group is not particularly limited, and can be selected from anionic, cationic, amphoteric, and nonionic functional groups. Examples of the anionic functional group include a carboxylic acid type, a sulfonic acid type, a sulfate ester type, and a phosphate ester type. Examples of the cationic functional group include an amine salt type and a quaternary ammonium salt type. Is mentioned. Examples of the amphoteric functional group include alkanolamide type, carboxybetaine type, and glycine type, and examples of the nonionic functional group include ether type and ester type. A carboxyl group is particularly preferred because of easy particle production.

  Since the resin particles contained in the slurry according to the embodiment of the present invention have a primary particle diameter larger than the diameter of the concave portion such as the trench as described above, the resin particles enter the trench during polishing of the organic film such as the resist film. No dishing can be performed. Moreover, since it is made of the same resin as the resist, it can be removed by a subsequent dry process (registry process) even if it remains on the wafer surface. Further, the polishing rate of the inorganic insulating film such as SiN in which the resist is embedded is extremely low, and a high selection ratio can be obtained.

  On the other hand, the surfactant has a hydrophilic portion, and this hydrophilic portion has an action of adhering to the polishing cloth and the surface of the wafer, and further to the resist shavings during polishing, and imparting hydrophilicity thereto. For example, the hydrophilic portion may be any of anionic, cationic, amphoteric, and nonionic functional groups, and specific examples include carboxylic acid type, sulfonic acid type, sulfate ester type, and phosphate ester type. It is done. For example, examples of the surfactant having an anionic hydrophilic part include ammonium polycarboxylate and ammonium dodecylbenzenesulfonate, and examples of the surfactant having a cationic hydrophilic part include cetyltrimethylammonium chloride and diallyldimethyl. Examples include ammonium chloride. Examples of the surfactant having a nonionic hydrophilic portion include acetylene diol surfactants and silicone surfactants. Moreover, you may use surfactant which has an amphoteric hydrophilic part.

The chemical mechanical polishing slurry for an organic film according to the embodiment of the present invention can be prepared, for example, by adding resin particles and a surfactant as described above to water. As water, ion exchange water, pure water, or the like can be used. The resin particles are preferably dispersed so as to have a concentration of about 0.01 to 30 wt% in the slurry. If it is less than 0.01 wt%, it becomes difficult to polish the organic film at a sufficiently high rate. On the other hand, if it exceeds 30 wt%, there is a possibility that the selection ratio with the inorganic insulating film such as SiN or SiO _{2 in} which the organic film is embedded cannot be obtained. Moreover, 0.01-10 wt% is preferable in a slurry, and, as for content of surfactant, 0.1-3 wt% is more preferable. If it is less than 0.01 wt%, it cannot adhere sufficiently to the substrate or polishing cloth, and it becomes difficult to discharge scraps. On the other hand, if it exceeds 10 wt%, the viscosity of the slurry becomes high, and there is a risk that handling will be difficult, such as clogging the piping.

  In the slurry, additives such as an oxidizing agent, an organic acid, or a pH adjusting agent may be blended in a conventionally used amount as necessary.

  The resin particles and the surfactant need not be previously mixed in water. The chemical mechanical polishing for organic film according to the embodiment of the present invention is performed on the polishing cloth when CMP of the organic film is performed. A slurry may be prepared. In this case, the dispersion containing the resin particles as described above and the solution containing the surfactant are supplied onto the polishing cloth and mixed. As the resin particle dispersion, for example, a commercially available slurry such as RST-01 manufactured by JSR can be used. It is desirable to supply the dispersion and the solution by controlling the concentration and flow rate so that the content of each component in the chemical mechanical polishing slurry for organic film after mixing is within the above-described range.

  Hereinafter, an embodiment of the present invention will be described by taking as an example a process of forming a buried strap that electrically connects a storage node electrode and a cell transistor diffusion layer.

(Embodiment 1)
1 to 3 show a method for forming a buried strap.

  First, as shown in FIG. 1A, a trench 14 is formed by a photolithography method and a dry etching method on a semiconductor substrate 11 on which a pad oxide film 12 and a pad nitride film 13 are sequentially deposited. A buried plate electrode 15 is formed under the trench peripheral surface by diffusing n-type impurities.

A capacitor dielectric film 16 is deposited on the inner periphery of the buried plate electrode 15 formed in this manner, and an As-doped polysilicon film (hereinafter referred to as a storage node) 17 is deposited on the capacitor dielectric film as a storage node electrode. To do. The storage node 17 fills the trench 14. Next, the storage node 17 is etched back to a desired depth, and the capacitor dielectric film 16 on the side wall of the trench 14 is removed by etching using a solution such as H ₃ PO ₄ to obtain the structure shown in FIG. . Thereafter, a thermal oxide film (not shown) is formed on the semiconductor substrate.

  Further, as shown in FIG. 1C, a collar oxide film 18 is deposited on the upper inner wall of the trench 14 in which the storage node 17 is not embedded. The color oxide film 18 has a function of electrically insulating the buried plate electrode 15 and the diffusion layer (not shown) of the cell transistor. Thereafter, the color oxide film 18 on the storage node 17 is removed by dry etching in order to make contact between a polysilicon film and a storage node 17 which will be described later.

  Next, after forming a resist film 19 on the entire surface as shown in FIG. 2D, the resist film is subjected to CMP, and is planarized as shown in FIG. 2E to expose the surface of the Pad nitride film 13. For polishing the resist film 19, the method according to the embodiment of the present invention is applied, whereby a flat surface can be obtained without retaining resist scraps. The resist CMP here will be described in detail later.

  Further, as shown in FIG. 2F, the resist film 19 is recessed by a CDE (Chemical Dry Etching) method to a depth necessary for making contact with a cell transistor diffusion layer (not shown).

  As shown in FIG. 3G, a part of the color oxide film 18 is removed by wet etching to expose a part of the semiconductor substrate 11 in the trench 14. The surface of the color oxide film 18 exists below the surface of the resist film 19 as shown in the figure, and an opening 20 of a buried strap is formed.

  After removing the resist film 19 as shown in FIG. 3 (h), polysilicon for making contact between the diffusion layer (not shown) of the cell transistor and the storage node 17 as shown in FIG. 3 (i). A film 21 is deposited. The polysilicon strap 21 fills the opening 20 of the buried strap. Thus, an embedded strap is formed.

  By the method of the present embodiment, the surface of the resist film 19 can be flattened without causing resist shavings to stay on the polishing cloth. For this reason, there is no inconvenience caused by resist scraps such as clogging of polishing cloth and adhesion of scraps. Thereafter, a registry process is performed, so that the resist film can be recessed at a uniform depth over the entire wafer. Therefore, it is possible to avoid variations in the thickness of the color oxide film 18 after the etch back.

  The variation in the thickness of the color oxide film causes a variation in the resistance value in the buried strap and causes a decrease in yield. For this reason, it is necessary to suppress the variation to 30 nm or less.

  Conventionally, the surface of the resist film is polished and flattened without removing scraps, and then the color oxide film is etched back after being recessed. Since the resist is buried in the trench with the shavings remaining partially, the resist film thickness over the entire wafer is not constant but non-uniform. For example, when a resist is buried in a trench having an opening diameter of 0.14 μm and a depth of 1.2 μm, a difference of about 200 nm occurs in the resist film thickness between a portion where the shaving residue remains and a portion where the residue remains. As a result, since the registry depth varies, the film thickness after the color oxide film etch back varies. Specifically, the thickness of the color oxide film has a variation of about 50 nm, resulting in a process failure.

  As described above, the polishing in the embodiment of the present invention eliminates resist shaving residue without staying on the resist film, so that the resist film 19 having a clean surface can be secured before the recess. For this reason, the variation in the thickness of the color oxide film 18 can be reduced to 30 nm or less.

  Here, the resist CMP according to the embodiment of the present invention will be described in detail.

In this embodiment, the resist film was polished using EPO-222 manufactured by Ebara Corporation as a CMP apparatus. Specifically, as shown in FIG. 4, the top ring 33 holding the semiconductor wafer 32 is brought into contact with a polishing load of 500 gf / cm ² while rotating the turntable 30 to which the polishing cloth 31 is attached at 50 rpm. It was. As the polishing cloth 31, an IC1000 manufactured by Rodel with an elastic compressibility of 290 MPa was used, and the top ring 33 was rotated at a rotational speed of 52 rpm.

  While supplying the dispersion containing the resin particles from the first supply nozzle 34, the solution containing the surfactant is supplied from the second supply nozzle 35 onto the polishing cloth 31 and mixed on the polishing cloth 31. Thus, a chemical mechanical polishing slurry 37 (slurry sample 1) for an organic film according to the present embodiment was prepared. As a dispersion liquid, a slurry (RST-01 manufactured by JSR) containing 1 wt% of polystyrene particles having a primary particle diameter of 200 nm was supplied at a flow rate of 150 cc / min. On the other hand, as a solution containing a surfactant, a 0.15 wt% polycarboxylic acid aqueous solution was supplied at a flow rate of 100 cc / min. When a chemical mechanical polishing slurry for an organic film in which resin particles and a surfactant are mixed in advance is used, one supply nozzle is sufficient. After polishing, water was supplied from a water supply nozzle (not shown) to perform water polishing. In FIG. 4, the dresser 36 is also shown.

In polishing the resist film, the polishing pressure for bringing the top ring 33 into contact with the polishing pad 31 can be selected within a range of 200 to 600 gf / cm ² . Moreover, what is necessary is just to determine suitably the rotation speed of the turntable 30 and the top ring 33 in the range of 10-50 rpm and 5-60 rpm, respectively.

  In FIG. 5, the structure of the grinding | polishing apparatus used for the method concerning embodiment of this invention is shown typically. The illustrated polishing apparatus has a general configuration, and includes a CMP unit 40 that performs polishing in two systems, and a cleaning unit 41 that cleans a wafer transferred from each. The loaded semiconductor wafer 43 is held by the polishing unit 44 after the organic film is polished on the turntable 42 in the CMP unit 40. In the above-described example, the slurry 43 and the water polishing are performed on the polishing cloth (not shown) attached on the turntable 42, and then the wafer 43 is transferred. In the CMP unit 40, a dressing unit 45 is also shown.

  In the cleaning unit 41, a wafer hanger (not shown) of the wafer transfer robot 46 receives the semiconductor wafer 43 from the polishing unit 44 and transfers it to the double-sided roll cleaner 47. The wafer 43 is cleaned on both sides with pure water by a roll sponge in a double-sided roll cleaning machine 47 and further transferred to a reversing machine 48 by a wafer transfer robot 46. The inverted wafer is cleaned with pure water by a pencil sponge in a pencil cleaner 49, and then spin-dried and accommodated in a cassette 50 (wafer unload).

  As a result of evaluating wafer defects after polishing using KLA2139 manufactured by KLA Tencor, the number of residual defects was 75 counts. Note that the number of defects before resist application as shown in FIG. 1C is 70 counts, and it can be said that the increase in defects was substantially suppressed.

  Furthermore, the following dispersion and surfactant solution were supplied onto the polishing cloth to prepare various slurry samples, and the organic film was polished under the same conditions as described above.

(Slurry sample 2)
Dispersion: 1 wt% of PST particles with a primary particle size of 200 nm
Flow rate 150cc / min
Surfactant solution: 0.2 wt% potassium dodecinebenzenesulfonate aqueous solution
Flow rate 200cc / min
(Slurry sample 3)
Dispersion: 1 wt% of PST particles with a primary particle size of 200 nm
Flow rate 150cc / min
Surfactant solution: 0.2 wt% acetylenic diol nonionic surfactant aqueous solution
Flow rate 200cc / min
(Slurry sample 4)
Dispersion: 1 wt% of PST particles with a primary particle size of 200 nm
Flow rate 150cc / min
Surfactant solution: 0.2 wt% silicone surfactant aqueous solution
Flow rate 200cc / min
The PST particles used here were synthesized by the following method. First, 92 parts by weight of styrene, 4 parts by weight of methacrylic acid, 4 parts by weight of hydroxyethyl acrylate, 0.1 part by weight of ammonium lauryl sulfate, 0.5 part by weight of ammonium persulfate, and 400 parts by weight of ion-exchanged water were added to a flask having a capacity of 2 liters. Housed in. While stirring in a nitrogen gas atmosphere, the temperature was raised to 70 ° C. and polymerized for 6 hours to obtain PST particles having a primary particle diameter of 200 nm. A carboxyl group was bonded to the surface of the particle.

(Slurry sample 5)
Dispersion: 1% by weight of PMMA particles with a primary particle size of 300 nm
Flow rate 150cc / min
Surfactant solution: 0.2 wt% polycarboxylic acid aqueous solution
Flow rate 200cc / min
The PMMA particles used here were synthesized by the following method. First, 94 parts by weight of methyl methacrylate, 1 part by weight of methacrylic acid, 5 parts by weight of hydroxymethyl methacrylate, 0.03 part by weight of ammonium lauryl sulfate, 0.6 part by weight of ammonium persulfate, and 400 parts by weight of ion-exchanged water were added. Housed in a 2 liter flask. While stirring in a nitrogen gas atmosphere, the temperature was raised to 70 ° C. and polymerization was performed for 6 hours to obtain PMMA particles having a primary particle diameter of 300 nm. A carboxyl group was bonded to the surface of the particle.

  When any slurry sample was used, an increase in defects could be suppressed as described above. Particularly, in the slurry samples 4 and 5, it was confirmed that the defect reduction effect was more remarkable. In these samples, a functional group was bonded to the surface of the resin particle, and the dispersibility of the resin particle could be further enhanced by this functional group. Ensuring the dispersibility of the resin particles is a very important factor in terms of polishing characteristics and from the viewpoint of storage stability. If the particles are not well dispersed, coarse particles may be formed and cause scratches. Or a slurry will turn into a hard cake and storage stability will deteriorate. Since the functional groups are present on the surface of the resin particles, such a problem does not occur in the slurry samples 4 and 5.

  For comparison, the resist film was polished under the same conditions except that the surfactant solution was not used (Comparative Example 1). When evaluated in the same manner as described above, the number of residual defects after polishing reached 200 counts.

  As described above, the number of defects in the organic film caused by the resist residue can be greatly reduced by the method according to the present embodiment. This will be described with reference to FIG. In the method according to the present embodiment, the slurry for polishing the organic film contains a surfactant together with the resin particles 52, and the polishing cloth 31 and the wafer 32 are caused by the action of the hydrophilic portion 53 of the surfactant. The surface is hydrophilized.

  Even if hydrophobic resist scraps (not shown) are generated, they are hydrophilized by the action of the hydrophilic portion 53. For this reason, the scraps are discharged without staying on the surface of the polishing pad 31 and are prevented from adhering to the surface of the wafer 32. That is, in the wafer 32 being polished, there is no resist scrap residue on the resist film 19 as shown in FIG. 7, and the surface of the resist film 19 is flattened over the entire wafer 32. Since no resist shaving residue remains, it is possible to obtain such a clean surface. Since the surface of the resist film 19 is flattened and cleaned, the recess process after CMP is not affected, and the registry access can be performed at a certain depth as shown in FIG. As a result, the film thickness after the color oxide film etch-back can be made uniform, and the resistance value variation in the buried strap can be reduced.

  On the other hand, since the surfactant is not used in Comparative Example 1, the surfaces of the polishing pad 31 and the wafer 32 are both hydrophobic as shown in FIG. Since the resist scrap residue 54 is also hydrophobic, the resist scrap residue 54 may adhere to the surface of the wafer 32 in some cases. In the wafer 32 being polished, a region where the shavings 54 are attached as shown in FIG. 10A and a region where no shavings exist as shown in FIG. 10B are mixed. Further, since the pad nitride film 13 provided on the substrate 11 is not inherently hydrophilic, the resist scrap residue 54 is likely to adhere to the pad nitride film 13 as shown in FIG.

  The shavings 54 remaining on the resist film 19 affect the recessing process after the CMP, and the resist film 19 after the registry etching has a variation in the recess depth as shown in FIGS. 11 (a) and 11 (b). Will occur. As a result, registry access cannot be performed with good uniformity, and the film thickness after the color oxide film etch-back becomes non-uniform, which causes variations in resistance values in the buried strap.

  In the method according to the present embodiment, resist shaving residue is removed from the wafer by the action of the surfactant, so that such inconvenience can be avoided. The polishing method according to this embodiment can be widely applied not only to a photoresist film but also to a hydrophobic organic film typified by a low dielectric constant insulating film such as organic SOG.

(Embodiment 2)
In the present embodiment, the same procedure as in the case of using the slurry sample 1 of the first embodiment described above except that the dispersion containing the resin particles and the solution containing the surfactant are sequentially supplied onto the polishing cloth. Then, the resist film was polished.

  The method of this embodiment will be described with reference to FIG. 5. The resist film is polished on the turntable 42 by first polishing using a resin particle dispersion, followed by a second polishing using a surfactant solution. It will be performed in two steps: polishing. When the second polishing is completed, the wafer 42 is transferred to the cleaning unit 41, and pure water cleaning is performed with a roll sponge in a double-sided roll cleaning machine 47. The wafer after the roll sponge cleaning is unloaded through pencil sponge cleaning and spin drying as described above.

  As a result of the first polishing using the resin particle dispersion, resist shavings may adhere to the surface of the polishing pad and the wafer. Such shavings are removed according to the mechanism described above by performing the second polishing using the surfactant solution.

  As a result of evaluating the defects of the wafer after polishing using KLA2139 manufactured by KLA Tencor, the number of residual defects was 70 count. The number of defects before resist application was 70 counts, and it was confirmed that the number of defects did not increase as a result of polishing in this embodiment. Further, there is almost no expansion of resist dishing by polishing with a surfactant, the polishing rate of SiN is 1 nm / min or less, and polishing of the pad nitride film hardly progresses.

  For comparison, the resist film was polished under the same conditions except that the surfactant solution was used not for polishing cloth but for roll sponge cleaning (Comparative Example 2). That is, the wafer is transferred to a double-sided roll cleaning machine after being polished on the polishing cloth only with the resin particle dispersion and washed with pure water. Here, roll sponge cleaning is performed using a surfactant solution, and then unloaded through pencil sponge cleaning and spin drying. When evaluated in the same manner as described above, the number of residual defects after polishing reached 150 counts.

  In this embodiment, immediately after resist polishing with the resin particle dispersion, cleaning is performed by polishing using a surfactant solution while bringing a polishing cloth and a wafer into contact with each other. For this reason, a high cleaning effect can be obtained as compared with cleaning with a roll sponge or the like. When a surfactant solution is used, cleaning with a roll sponge as in Comparative Example 2 cannot reduce the number of defects caused by resist residues. Since the hydrophilic group in the surfactant acts on the polishing cloth and the wafer, and the effect is obtained, the use of the surfactant solution on the polishing cloth significantly reduces defects caused by the resist residue. It became possible for the first time.

(Embodiment 3)
As in the first embodiment, the resin particle dispersion and the surfactant solution are supplied onto the polishing cloth, and the resist film is polished with the chemical mechanical polishing slurry for organic film, and then the resin particle dispersion is supplied. May be stopped and only the surfactant solution may be supplied. In this case, the polishing with the chemical mechanical polishing slurry for organic film and the cleaning with the surfactant solution are performed on the polishing cloth, thereby further enhancing the hydrophilic effect of the polishing cloth surface and the wafer surface. . As a result, the number of defects caused by the resist residue can be further reduced and the resist film can be polished more stably.

1 is a process cross-sectional view illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention. Sectional drawing which shows the process of following FIG. Sectional drawing which shows the process following FIG. Schematic which shows the state of CMP. Schematic which shows the structure of a grinding | polishing apparatus. The schematic diagram which shows the state of the polishing cloth and wafer in grinding | polishing in embodiment. Sectional drawing of the resist film in process of grinding | polishing in embodiment. Sectional drawing of the resist film after registry access in embodiment. The schematic diagram which shows the state of the polishing cloth and wafer in grinding | polishing in a comparative example. Sectional drawing of the resist film under grinding | polishing in a comparative example. Sectional drawing of the resist film after the registry access in a comparative example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Semiconductor substrate; 12 ... Pad oxide film; 13 ... Pad nitride film; 14 ... Trench 15 ... Plate electrode; 16 ... Capacitor dielectric film; 17 ... Storage node 18 ... Color oxide film; 19 ... Resist film; 30 ... Turntable; 31 ... Polishing cloth; 32 ... Semiconductor substrate 33 ... Top ring; 34 ... First supply nozzle; 35 ... Second supply nozzle 36 ... Dresser; 37 ... Slurry; DESCRIPTION OF SYMBOLS 40 ... CMP part; 41 ... Cleaning part 42 ... Turntable; 43 ... Semiconductor wafer; 44 ... Polishing unit 45 ... Dressing unit; 46 ... Wafer transfer robot 47 ... Double-sided roll cleaner; 48 ... Reversing machine; 50 ... cassette; 52 ... resin particles; 53 ... hydrophilic part; 54 ... Strike shavings.

Claims (5)

  A chemical mechanical polishing slurry for an organic film, comprising resin particles having a primary particle size of 0.05 μm or more and 5 μm or less and a surfactant having a hydrophilic portion.   The said resin particle is a particle which consists of at least 1 sort (s) of resin selected from the group which consists of a methacryl resin, a polystyrene resin, a urea resin, a melamine resin, a polyacetal resin, and a polycarbonate resin. Chemical mechanical polishing slurry for organic films.   The chemical mechanical polishing slurry for an organic film according to claim 1 or 2, wherein the hydrophilic part in the surfactant is selected from anionic, cationic and nonionic. A method for chemically and mechanically polishing an organic film deposited on a semiconductor substrate, comprising:
A step of bringing a semiconductor substrate having the organic film into contact with a polishing cloth affixed on a turntable;
An organic film comprising the step of polishing the organic film by supplying the chemical mechanical polishing slurry for an organic film according to any one of claims 1 to 3 onto the polishing cloth. Chemical mechanical polishing method. A method for chemically and mechanically polishing an organic film deposited on a semiconductor substrate, comprising:
A step of bringing a semiconductor substrate having the organic film into contact with a polishing cloth affixed on a turntable;
Following the first polishing step of supplying a dispersion containing resin particles having a primary particle size of 0.05 μm or more and 5 μm or less onto the polishing cloth, and polishing the organic film, and the first polishing step A chemical mechanical polishing method for an organic film, comprising: a second polishing step for polishing the organic film by supplying a solution of a surfactant having a hydrophilic portion onto the polishing cloth.

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