JP2005264261A - Electronic component material - Google Patents
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- JP2005264261A JP2005264261A JP2004080465A JP2004080465A JP2005264261A JP 2005264261 A JP2005264261 A JP 2005264261A JP 2004080465 A JP2004080465 A JP 2004080465A JP 2004080465 A JP2004080465 A JP 2004080465A JP 2005264261 A JP2005264261 A JP 2005264261A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
Abstract
Description
本発明は、銅又は銅系合金を基材とする電子部品材料、及びその作製方法に関する。 The present invention relates to an electronic component material based on copper or a copper-based alloy, and a manufacturing method thereof.
一般に、銅系リードフレームのパラジウムプレーティッドフレームでは、Ｐｄめっき層の下地として、防錆、耐蝕、半田濡れ性などを向上させるために、Ｎｉめっきが施されている。この様な目的では、通常、厚さ０．８〜２μｍ程度のＮｉめっき層を形成し、その上にＰｄめっき層を形成し、更に、必要に応じてＡｕ等のめっき処理が施されている。 In general, in a palladium plated frame of a copper-based lead frame, Ni plating is applied as a base of a Pd plating layer in order to improve rust prevention, corrosion resistance, solder wettability, and the like. For such a purpose, a Ni plating layer having a thickness of about 0.8 to 2 μm is usually formed, a Pd plating layer is formed thereon, and further, a plating treatment such as Au is performed as necessary. .
近年、ＩＣ，ＬＳＩ等の集積度が増加し、アウターリードのピッチは狭くなり、長さは短くなりつつある。そこで、問題となるのが、リード折り曲げ時のクラックの発生である。Ｎｉめっき皮膜は、Ｃｕに比べて硬くクラックが入りやすい傾向があるので、これを回避するには、Ｎｉめっき皮膜のめっき厚を薄くすることや、硬度を下げることが考えられる。しかしながら、Ｎｉめっき皮膜の厚さを薄くしたり、Ｎｉめっき皮膜の硬度を低下させると、Ｎｉめっき皮膜中のピンホールが増加する傾向がある。 In recent years, the degree of integration of ICs, LSIs, etc. has increased, the pitch of outer leads has become narrower, and the length has become shorter. Thus, the problem is the generation of cracks when bending the leads. Since the Ni plating film tends to be harder and more susceptible to cracking than Cu, in order to avoid this, it is conceivable to reduce the plating thickness of the Ni plating film or reduce the hardness. However, when the thickness of the Ni plating film is reduced or the hardness of the Ni plating film is reduced, pinholes in the Ni plating film tend to increase.
上記した銅系リードフレームのＮｉめっき皮膜にピンホールが存在すると、アッセンブリ工程の熱ストレスにより、ピンホールを通じて基材のＣｕがＮｉ層の表面に拡散するおそれがある。この様な表面に拡散したＣｕは、空気中の酸素と結合して酸化物を生成し、これが、アッセンブリにおいて半導体チップとの接合阻害要因となる。 If pin holes are present in the Ni plating film of the copper lead frame described above, there is a risk that Cu of the base material diffuses to the surface of the Ni layer through the pin holes due to thermal stress in the assembly process. Cu diffused to such a surface combines with oxygen in the air to generate an oxide, which becomes a factor for inhibiting the bonding with the semiconductor chip in the assembly.
一方、各種の電子部品では、ＩＣチップ等を基板等に搭載する為に外装めっきとして半田めっきが施されているが、近年、半田に含まれるＰｂの環境への悪影響が問題となっており、その使用が中止される方向にある。このため、半田めっきの代替として、Ｓｎめっきが注目されつつある。しかしながら、Ｓｎめっき皮膜をＣｕ素材上に形成する場合には、ＳｎとＣｕが接触すると、ＳｎとＣｕの金属間化合物（Ｃｕ6Ｓｎ5）が形成されてウイスカが生じ、回路の短絡の原因となる。 On the other hand, in various electronic components, solder plating is applied as exterior plating in order to mount an IC chip or the like on a substrate or the like, but in recent years, the adverse effect on the environment of Pb contained in solder has become a problem. Its use is in the direction of being discontinued. For this reason, Sn plating is attracting attention as an alternative to solder plating. However, when the Sn plating film is formed on the Cu material, when Sn and Cu come into contact, an intermetallic compound of Sn and Cu (Cu 6 Sn 5 ) is formed, causing whisker, which causes a short circuit. Become.
この対策として、Ｓｎめっきの下地として、Ａｇ、Ｎｉ等、Ｃｕと拡散しない金属のめっき皮膜を形成し、その上にＳｎめっきを行うことによって、ＳｎとＣｕの金属間化合物の生成を抑制する方法が知られている（下記特許文献１参照）。しかしながら、この場合にも、Ｓｎの下地めっき層にピンホールが存在すると、Ｃｕの拡散により、Ｃｕ6Ｓｎ5が形成されてウィスカの発生を助長する可能性がある。
本発明は、上記した従来技術の現状に鑑みてなされたものであり、その主な目的は、銅、銅合金などの銅系金属からなる基材上に、Ｓｎめっき皮膜等を形成する際に、下地めっき皮膜を膜厚化することなく、基材である銅系金属の悪影響を抑制することが可能な方法を提供することである。 The present invention has been made in view of the current state of the prior art described above, and its main purpose is to form an Sn plating film or the like on a substrate made of a copper-based metal such as copper or a copper alloy. An object of the present invention is to provide a method capable of suppressing the adverse effect of a copper-based metal as a base material without increasing the thickness of the base plating film.
本発明者は、上記した目的を達成すべく鋭意研究を重ねた結果、銅系基材上に、Ｐｄ置換処理を施した後、Ｎｉめっき皮膜を形成する方法によれば、Ｎｉめっき皮膜の膜厚が薄い場合であっても、基材の銅金属の拡散を防止することが可能となることを見出し、ここに本発明を完成するに至った。 As a result of intensive studies to achieve the above-described object, the present inventor conducted a Pd substitution treatment on a copper base material, and then formed a Ni plating film according to the method of forming a Ni plating film. It has been found that even when the thickness is small, it is possible to prevent the diffusion of the copper metal of the base material, and the present invention has been completed here.
即ち、本発明は、下記の電子部品材料及びその製造方法を提供するものである。
１． 銅又は銅合金からなる基材上に、置換析出によるパラジウム薄膜とニッケルめっき層を順次形成してなる電子部品材料。
２． パラジウム薄膜の厚さが、０．００２〜０．０６μｍであり、ニッケルめっき層の厚さが０．１〜２μｍである上記項１に記載の電子部品用材料。
３． ニッケルめっき層上に、更に、Ｓｎめっき層を形成してなる上記項１又は２に記載の電子部品材料。
４． 銅又は銅合金からなる基材上に、パラジウム置換処理を施した後、ニッケルめっき処理を行うことを特徴とする電子部品材料の作製方法。
５． パラジム置換処理の方法が、浸漬処理であり、ニッケルめっき処理の方法が電解めっき法又は無電解めっき法である上記項４に記載の電子部品材料の作製方法。
That is, this invention provides the following electronic component material and its manufacturing method.
1. An electronic component material obtained by sequentially forming a palladium thin film and a nickel plating layer by substitution deposition on a substrate made of copper or a copper alloy.
2. Item 2. The electronic component material according to Item 1, wherein the palladium thin film has a thickness of 0.002 to 0.06 µm and the nickel plating layer has a thickness of 0.1 to 2 µm.
3. Item 3. The electronic component material according to Item 1 or 2, wherein a Sn plating layer is further formed on the nickel plating layer.
4). A method for producing an electronic component material, comprising performing a palladium substitution process on a base material made of copper or a copper alloy, and then performing a nickel plating process.
5). Item 5. The method for producing an electronic component material according to Item 4, wherein the paradigm substitution treatment method is immersion treatment, and the nickel plating treatment method is an electrolytic plating method or an electroless plating method.
本発明の処理対象物となる基材は、銅、銅合金などの銅系金属を素材とするものである。銅合金の具体例としては、Ｃｕ−Ｆｅ系合金、Ｃｕ−Ｓｎ系合金、Ｃｕ−Ｎｉ−Ｚｎ合金などの各種の多元合金を挙げることができる。 The base material to be treated according to the present invention is made of a copper-based metal such as copper or copper alloy. Specific examples of the copper alloy include various multi-component alloys such as a Cu—Fe alloy, a Cu—Sn alloy, and a Cu—Ni—Zn alloy.
具体的な処理対象物の種類については、特に限定的ではないが、半導体用リードフレーム、コネクターリード、電子材料、回路基板等の電子部品材料が代表的なものである。 Specific types of processing objects are not particularly limited, but typical examples are electronic component materials such as semiconductor lead frames, connector leads, electronic materials, and circuit boards.
本発明方法では、銅系基材上にＰｄ置換処理を施した後、Ｎｉめっき皮膜を形成する。この様な処理を行うことによって、Ｎｉめっき皮膜の膜厚が薄い場合であっても、基材の銅金属が、Ｎｉめっき皮膜中のピンホールを通って、表面に拡散することを防止して、素材の銅金属がＮｉ表面に拡散することによる悪影響を抑制できる。具体的には、Ｎｉめっき表面にＳｎめっき層を形成する場合には、ＳｎとＣｕの金属間化合物の形成を防止でき、ウィスカの発生を防止できる。 In the method of the present invention, the Ni plating film is formed after the Pd substitution treatment is performed on the copper base material. By performing such treatment, even when the Ni plating film is thin, the copper metal of the base material is prevented from diffusing to the surface through the pinholes in the Ni plating film. The adverse effect due to the diffusion of copper metal on the Ni surface can be suppressed. Specifically, when an Sn plating layer is formed on the Ni plating surface, formation of an intermetallic compound of Sn and Cu can be prevented, and generation of whiskers can be prevented.
更に、本発明によれば、Ｎｉめっき皮膜を薄膜化できるので、曲げ加工等を行う場合にも、クラックの発生を防止できる。 Furthermore, according to the present invention, since the Ni plating film can be thinned, the occurrence of cracks can be prevented even when performing bending or the like.
Ｐｄ置換処理の方法については、特に限定的ではないが、通常は、浸漬処理等の方法を適用すればよい。 The method of Pd substitution treatment is not particularly limited, but usually a method such as immersion treatment may be applied.
Ｐｄ置換処理用の処理液としては、Ｐｄ化合物を溶解した酸性水溶液を用いることができる。この場合、Ｐｄ化合物の種類については特に限定はなく、水溶性のＰｄ化合物を使用すればよい。この様なＰｄ化合物を含有する酸性水溶液中に銅系金属からなる基材を浸漬することによって、ＰｄとＣｕの標準電位の差により、銅系金属からなる基材上にＰｄを還元析出させることができる。 As the treatment liquid for the Pd substitution treatment, an acidic aqueous solution in which a Pd compound is dissolved can be used. In this case, the type of Pd compound is not particularly limited, and a water-soluble Pd compound may be used. By dipping a base material made of copper-based metal in an acidic aqueous solution containing such a Pd compound, Pd is reduced and deposited on the base material made of copper-based metal due to the difference in standard potential between Pd and Cu. Can do.
Ｐｄ置換処理液の組成及び処理条件については特に限定的ではないが、その具体例は、下記の通りである。 The composition and treatment conditions of the Pd substitution treatment solution are not particularly limited, but specific examples thereof are as follows.
ＰｄＣｌ2（Ｐｄ2+として） １００〜２０００ｍｇ／ｌ
ＨＣｌ（３６％） １０〜１００ ｍｌ／ｌ
浴温 ３０〜６０℃、 浸漬時間 １０〜３０秒
Ｐｄ置換処理によって形成されるＰｄ薄膜の厚さについては、特に限定的ではないが、通常、０．００２〜０．０６μｍ程度とすることが好ましく、０．００５〜０．０１μｍ程度とすることがより好ましい。本発明によれば、この様な薄い膜厚のＰｄ薄膜を形成するだけで、Ｎｉめっき皮膜のピンホールからの銅の溶出を抑制できる。従って、高価な金属であるＰｄの付着量を低減して、安価な材料を供給できる。
PdCl 2 (as Pd 2+ ) 100-2000 mg / l
HCl (36%) 10-100 ml / l
Bath temperature 30 to 60 ° C., immersion time 10 to 30 seconds The thickness of the Pd thin film formed by the Pd substitution treatment is not particularly limited, but is usually preferably about 0.002 to 0.06 μm. More preferably, the thickness is about 0.005 to 0.01 μm. According to the present invention, elution of copper from the pin hole of the Ni plating film can be suppressed only by forming such a thin Pd thin film. Therefore, the amount of Pd, which is an expensive metal, can be reduced, and an inexpensive material can be supplied.
Ｎｉめっき皮膜の形成方法については、特に限定的ではなく、電解めっき方法及び無電解めっき法の何れの方法を採用しても良い。めっき浴組成、めっき条件等についても特に限定はなく、公知のめっき浴を用い、公知の条件に従ってＮｉめっき皮膜を形成すればよい。 The method for forming the Ni plating film is not particularly limited, and any method of an electrolytic plating method and an electroless plating method may be adopted. There are no particular limitations on the plating bath composition, plating conditions, etc., and a Ni plating film may be formed using a known plating bath according to known conditions.
本発明では、特に、形成されるＮｉめっき皮膜の応力が低く、更に、皮膜物性の制御が可能となる点で、電解めっき法によってＮｉめっき皮膜を形成することが好ましい。 In the present invention, it is particularly preferable to form the Ni plating film by an electrolytic plating method in that the stress of the formed Ni plating film is low and the physical properties of the film can be controlled.
Ｎｉめっき皮膜の厚さについては、特に限定的ではなく、通常、０．１〜２μｍ程度とすればよい。特に、本発明では、０．１〜０．５μｍ程度という比較的薄い膜厚のＮｉめっき皮膜を形成する場合であっても、ピンホールからの銅金属の溶出を抑制できるので、この様な膜厚の薄いＮｉ皮膜を形成する場合には、リード折り曲げ時などにおけるクラックの発生を大きく低減できる点で非常に有利である。 The thickness of the Ni plating film is not particularly limited, and is usually about 0.1 to 2 μm. In particular, in the present invention, even when a Ni plating film having a relatively thin film thickness of about 0.1 to 0.5 μm is formed, elution of copper metal from the pinhole can be suppressed. Forming a thin Ni film is very advantageous in that the occurrence of cracks during bending of the lead can be greatly reduced.
上記した方法によって、Ｐｄ置換処理を行い、Ｎｉめっき皮膜を形成した材料は、その後、使用目的に応じて、Ｓｎ皮膜などの各種の皮膜を形成することができる。これらの皮膜の形成方法については、公知の方法に従えばよい。 By using the above method, the Pd substitution treatment and the material on which the Ni plating film is formed can then form various films such as an Sn film, depending on the purpose of use. About the formation method of these membrane | film | coats, what is necessary is just to follow a well-known method.
例えば、銅系基材上にＰｄ置換処理を施し、次いで、Ｎｉめっき皮膜を形成した後、Ｓｎ皮膜を形成したリードフレーム、コネクターリード等の各電子部品は、Ｎｉめっき皮膜のピンホールからの銅金属の拡散を防止して、ウィスカの形成に伴う短絡の発生を防ぐことができる。しかも、Ｎｉ膜厚が薄い場合であってもウィスカの発生を防止できるので、Ｎｉめっき皮膜を薄膜化することによってリード折り曲げ時などにおいてＮｉめっき皮膜のクラックの発生を防止できる。 For example, after performing Pd substitution treatment on a copper-based substrate and then forming a Ni plating film, each electronic component such as a lead frame and a connector lead on which a Sn film is formed is formed of copper from a pin hole of the Ni plating film. It is possible to prevent the metal from diffusing and prevent the occurrence of a short circuit due to the formation of whiskers. In addition, even when the Ni film thickness is thin, whisker generation can be prevented, so that the Ni plating film can be prevented from cracking when the lead is bent by reducing the thickness of the Ni plating film.
本発明によれば、銅又は銅系合金を基材とする各種の電子部品用材料について、比較的膜厚の薄いＮｉめっき皮膜を形成するだけで、Ｎｉめっき皮膜のピンホールからの銅金属の拡散を抑制できる。 According to the present invention, for various electronic component materials based on copper or a copper-based alloy, it is only necessary to form a relatively thin Ni plating film, and to form copper metal from the pin hole of the Ni plating film. Diffusion can be suppressed.
その結果、リードの折り曲げ等の加工時においてクラックの発生を大きく低減でき、更に、Ｎｉめっき皮膜上に形成されたＳｎ皮膜などに対する銅金属の悪影響を抑制して、信頼性の高い電子部品材料を得ることができる。 As a result, the generation of cracks during processing such as bending of leads can be greatly reduced, and further, the adverse effect of copper metal on the Sn film formed on the Ni plating film can be suppressed, and a highly reliable electronic component material can be obtained. Can be obtained.
以下、実施例を挙げて本発明を更に詳細に説明する。 Hereinafter, the present invention will be described in more detail with reference to examples.
実施例１
銅板（大きさ５０ｍｍ×５０ｍｍ×０．２ｍｍ）を基材として用い、下記条件でＰｄ置換処理を行って、厚さ０．０１μｍのＰｄ皮膜を形成した。
Ｐｄ置換液組成：
ＰｄＣｌ2（Ｐｄ2+として） ５００ｍｇ／ｌ
ＨＣｌ（３６％） ３０ｍｌ／ｌ
Ｐｄ置換処理条件：
浴温 ５０℃、 浸漬時間２０秒
次いで、下記条件で電気めっきを行い、Ｐｄ皮膜上に０．１〜０．８μｍの範囲で４種類の膜厚のＮｉめっき皮膜を形成した。
［Ｎｉめっき液組成］
ＮｉＳＯ4・６Ｈ2Ｏ ３００ｇ／ｌ
ＮｉＣｌ2・６Ｈ2Ｏ ７５ｇ／ｌ
Ｈ3ＢＯ3 ４５ｇ／ｌ
添加剤 適量
［Ｎｉめっき条件］
浴温 ４５℃
陰極電流密度 ３Ａ／ｄｍ2
上記した方法でＮｉめっき皮膜を形成した各試料について、めっき皮膜中のピンホールの発生状況を確認するために、ＮＨ4ＯＨを２０ｍｌ／ｌとＨ2Ｏ2を２０ｍｌ／ｌ含有する銅の溶解液中に浸漬して、銅の溶出量を求めた。
Example 1
A copper plate (size: 50 mm × 50 mm × 0.2 mm) was used as a substrate, and Pd substitution treatment was performed under the following conditions to form a Pd film having a thickness of 0.01 μm.
Pd substitution liquid composition:
PdCl 2 (as Pd 2+ ) 500 mg / l
HCl (36%) 30 ml / l
Pd replacement processing conditions:
Bath temperature 50 ° C, immersion time 20 seconds
Next, electroplating was performed under the following conditions to form four types of Ni plating films with a thickness of 0.1 to 0.8 μm on the Pd film.
[Ni plating solution composition]
NiSO 4 · 6H 2 O 300g / l
NiCl 2 · 6H 2 O 75g / l
H 3 BO 3 45 g / l
Additive appropriate amount [Ni plating condition]
Bath temperature 45 ° C
Cathode current density 3A / dm 2
For each sample on which a Ni plating film was formed by the above method, in order to confirm the occurrence of pinholes in the plating film, dissolution of copper containing 20 ml / l NH 4 OH and 20 ml / l H 2 O 2 It was immersed in the liquid and the amount of copper elution was determined.
銅溶出試験の条件として、条件１（浴温：室温、浸漬時間：６０分）と条件２（浴温：４０℃、浸漬時間１２０分）の二種類の条件を採用した。銅の溶解液中に溶出した銅の量は、溶解液を蒸発濃縮した後、原子吸光分析で定量した。 As conditions for the copper elution test, two conditions, condition 1 (bath temperature: room temperature, immersion time: 60 minutes) and condition 2 (bath temperature: 40 ° C., immersion time 120 minutes) were employed. The amount of copper eluted in the copper solution was quantified by atomic absorption analysis after evaporating and concentrating the solution.
以上の結果を下記表１に示す。
尚、比較試験として、Ｐｄ置換処理を行うことなく、それ以外は上記実施例と同様の条件でＮｉめっき皮膜を形成した試料についても、同様にして銅の溶解量を求めた。この結果も下記表１に併せて示す。
The above results are shown in Table 1 below.
As a comparative test, the amount of copper dissolved was also determined in the same manner for a sample in which a Ni plating film was formed under the same conditions as in the above example without performing Pd substitution treatment. The results are also shown in Table 1 below.
実施例２
リン脱酸銅よりなる基材上に、実施例１と同様の条件でＰｄ置換処理によって厚さ０．０１μｍのＰｄ皮膜を形成した。次いで、実施例１と同様の条件で厚さ０．４μｍのＮｉめっき皮膜を形成した後、下記の条件で厚さ３μｍのＳｎめっき皮膜を形成した。
［Ｓｎめっき液組成］
ＳｎＳＯ4 ６０ｇ／ｌ
Ｈ2ＳＯ4 １００ｇ／ｌ
クレゾールスルフォン酸 １００ｇ／ｌ
無光沢用添加剤 適量
［Ｓｎめっき条件］
浴温 ２０℃
陰極電流密度 ２Ａ／ｄｍ2
この様にしてＳｎめっき皮膜を形成した試料を、約５０℃で約１２ヶ月間保存した後、Ｓｎめっき皮膜の表面を光学顕微鏡により観察した。その結果、１２ヶ月保存後においてもＳｎめっき皮膜の表面にウィスカが全く発生しておらず、Ｎｉめっき層の下層にパラジウム薄膜を形成することにより、ウィスカの発生を長期間防止できることが確認できた。
Example 2
A Pd film having a thickness of 0.01 μm was formed on the substrate made of phosphorous-deoxidized copper by Pd substitution treatment under the same conditions as in Example 1. Next, after forming a 0.4 μm thick Ni plating film under the same conditions as in Example 1, a 3 μm thick Sn plating film was formed under the following conditions.
[Sn plating solution composition]
SnSO 4 60g / l
H 2 SO 4 100 g / l
Cresol sulfonic acid 100g / l
Appropriate amount of additive for matte [Sn plating conditions]
Bath temperature 20 ° C
Cathode current density 2A / dm 2
The sample on which the Sn plating film was formed in this way was stored at about 50 ° C. for about 12 months, and then the surface of the Sn plating film was observed with an optical microscope. As a result, it was confirmed that whisker was not generated at all on the surface of the Sn plating film even after storage for 12 months, and that it was possible to prevent whisker generation for a long time by forming a palladium thin film under the Ni plating layer. .
Claims (5)
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| WO2008012862A1 (en) * | 2006-07-24 | 2008-01-31 | Ebara-Udylite Co., Ltd. | Whisker preventive agent for tin or tin alloy plating, and method of whisker prevention making use of the same |
| JP5679216B2 (en) * | 2009-06-29 | 2015-03-04 | オーエム産業株式会社 | Manufacturing method of electrical parts |
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| JPH11135921A (en) * | 1997-10-28 | 1999-05-21 | Matsushita Electric Works Ltd | Plating method |
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| JPH02276249A (en) * | 1989-04-18 | 1990-11-13 | Seiko Epson Corp | Manufacture of semiconductor circuit bump |
| JPH03237735A (en) * | 1989-12-18 | 1991-10-23 | Shinko Electric Ind Co Ltd | Tab tape |
| JPH0484449A (en) * | 1990-07-27 | 1992-03-17 | Shinko Electric Ind Co Ltd | Tab tape |
| JPH06310835A (en) * | 1993-04-23 | 1994-11-04 | Hitachi Chem Co Ltd | Method of electroless au plating onto copper surface |
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| WO2008012862A1 (en) * | 2006-07-24 | 2008-01-31 | Ebara-Udylite Co., Ltd. | Whisker preventive agent for tin or tin alloy plating, and method of whisker prevention making use of the same |
| KR101126104B1 (en) | 2006-07-24 | 2012-03-29 | 에바라 유지라이토 가부시키가이샤 | Whisker preventive agent for tin or tin alloy plating, and method of whisker prevention making use of the same |
| JP5679216B2 (en) * | 2009-06-29 | 2015-03-04 | オーエム産業株式会社 | Manufacturing method of electrical parts |
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