JP2005259971A5 - - Google Patents

Download PDF

Info

Publication number
JP2005259971A5
JP2005259971A5 JP2004069278A JP2004069278A JP2005259971A5 JP 2005259971 A5 JP2005259971 A5 JP 2005259971A5 JP 2004069278 A JP2004069278 A JP 2004069278A JP 2004069278 A JP2004069278 A JP 2004069278A JP 2005259971 A5 JP2005259971 A5 JP 2005259971A5
Authority
JP
Japan
Prior art keywords
semiconductor
light emitting
emitting element
oxide film
semiconductor oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004069278A
Other languages
Japanese (ja)
Other versions
JP2005259971A (en
JP4635458B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2004069278A priority Critical patent/JP4635458B2/en
Priority claimed from JP2004069278A external-priority patent/JP4635458B2/en
Publication of JP2005259971A publication Critical patent/JP2005259971A/en
Publication of JP2005259971A5 publication Critical patent/JP2005259971A5/ja
Application granted granted Critical
Publication of JP4635458B2 publication Critical patent/JP4635458B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Claims (6)

ｐ型半導体層の上に、ｐ型コンタクト層を介して形成された正電極を備える半導体発光素子であって、
前記正電極は、前記ｐ型コンタクト層と接触している第１の半導体酸化物膜と、その上に順に積層された金属膜及び第２の半導体酸化物膜とを有することを特徴とする半導体発光素子。 A semiconductor light emitting device comprising a positive electrode formed on a p-type semiconductor layer via a p-type contact layer,
The positive electrode includes a first semiconductor oxide film that is in contact with the p-type contact layer, and a metal film and a second semiconductor oxide film that are sequentially stacked on the first semiconductor oxide film. Light emitting element. 正電極は、半導体発光素子の発光波長における光の透過率が８０％以上である請求項１に記載の半導体発光素子。   The semiconductor light emitting element according to claim 1, wherein the positive electrode has a light transmittance of 80% or more at an emission wavelength of the semiconductor light emitting element. 第１及び第２の半導体酸化物膜が、亜鉛、インジウム、スズ及びマグネシウムからなる群から選択される少なくとも１種の元素を含む請求項１又は２に記載の半導体発光素子。   3. The semiconductor light emitting element according to claim 1, wherein the first and second semiconductor oxide films include at least one element selected from the group consisting of zinc, indium, tin, and magnesium. 第１及び第２の半導体酸化物膜がＩＴＯ膜である請求項１〜３に記載の半導体発光素子。   The semiconductor light emitting device according to claim 1, wherein the first and second semiconductor oxide films are ITO films. 第１の半導体酸化物膜は、内部に複数の空隙を有し、第２の半導体酸化物膜は、第１の半導体酸化物膜よりも密度が大きい請求項１〜４のいずれか１つに記載の半導体発光素子。   The first semiconductor oxide film has a plurality of voids therein, and the second semiconductor oxide film has a higher density than the first semiconductor oxide film. The semiconductor light emitting element as described. 金属膜が、銀、銅、金、白金、ルテニウム、ロジウム、パラジウム、オスミウム又はイリジウムの単層膜あるいはこれらの積層膜からなる請求項１〜５のいずれか１つに記載の半導体発光素子。   The semiconductor light-emitting element according to claim 1, wherein the metal film is made of a single layer film of silver, copper, gold, platinum, ruthenium, rhodium, palladium, osmium, or iridium or a laminated film thereof.
JP2004069278A 2004-03-11 2004-03-11 Semiconductor light emitting device Expired - Lifetime JP4635458B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004069278A JP4635458B2 (en) 2004-03-11 2004-03-11 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004069278A JP4635458B2 (en) 2004-03-11 2004-03-11 Semiconductor light emitting device

Publications (3)

Publication Number Publication Date
JP2005259971A JP2005259971A (en) 2005-09-22
JP2005259971A5 true JP2005259971A5 (en) 2007-04-26
JP4635458B2 JP4635458B2 (en) 2011-02-23

Family

ID=35085406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004069278A Expired - Lifetime JP4635458B2 (en) 2004-03-11 2004-03-11 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JP4635458B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5032138B2 (en) * 2007-01-26 2012-09-26 株式会社アルバック Method for manufacturing light-emitting diode element
JP5332882B2 (en) 2009-04-30 2013-11-06 豊田合成株式会社 Semiconductor light emitting device
KR101976450B1 (en) * 2012-10-19 2019-05-09 엘지이노텍 주식회사 Light emitting device and light emitting device package
KR102284597B1 (en) * 2013-03-13 2021-08-04 루미리즈 홀딩 비.브이. Method and apparatus for creating a porous reflective contact
JP7300603B2 (en) * 2020-11-17 2023-06-30 日亜化学工業株式会社 Light-emitting element and method for manufacturing light-emitting element

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685086B2 (en) * 1991-12-09 1997-12-03 沖電気工業株式会社 Method for manufacturing lower substrate of active matrix liquid crystal display
JPH0773738A (en) * 1993-08-31 1995-03-17 Sharp Corp Transparent conductive film and manufacture thereof
JPH07162035A (en) * 1993-12-09 1995-06-23 Ricoh Co Ltd Light emitting diode
JPH1069984A (en) * 1996-06-18 1998-03-10 Mitsui Petrochem Ind Ltd Organic electro-luminescence element
JPH10112337A (en) * 1996-08-09 1998-04-28 Nikon Corp Wet solar cell
JPH10341039A (en) * 1997-04-10 1998-12-22 Toshiba Corp Semiconductor light emitting element and fabrication thereof
JPH11335815A (en) * 1998-05-20 1999-12-07 Nippon Sheet Glass Co Ltd Substrate with transparent conductive film and deposition apparatus
JP3479023B2 (en) * 1999-05-18 2003-12-15 シャープ株式会社 Method for manufacturing electric wiring, wiring board, display device, and image detector
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
JP2003168571A (en) * 2001-11-29 2003-06-13 Ulvac Japan Ltd Organic el element
GB2403597B (en) * 2002-04-02 2005-08-03 Nat Inst Of Advanced Ind Scien Porous electroconductive material having light transmitting property
JP4392741B2 (en) * 2002-04-17 2010-01-06 日揮触媒化成株式会社 Photoelectric cell

Similar Documents

Publication Publication Date Title
JP2005209733A5 (en)
JP2005191326A5 (en)
JP2005123489A5 (en)
JP2006066903A5 (en)
JP2012146641A5 (en)
JP2008218878A5 (en)
JP2005033197A5 (en)
JP2003092191A5 (en)
JP2004006991A5 (en)
TW201836145A (en) Display screen, display device, and manufacturing method of display screen capable of eliminating non-display region and enlarging screen-to-body ratio
JP2009064612A5 (en)
JP2001214159A5 (en) EL element and EL display device
JP2008503055A5 (en)
JP2010531058A5 (en)
JP2005011792A5 (en)
JP2011181961A5 (en)
JP2010529598A5 (en)
JP2013026616A5 (en)
JP2018501650A5 (en)
JP2009518781A5 (en)
JP2005340187A5 (en)
WO2008126267A1 (en) Light emitting device
JP2004207742A5 (en)
JP2007234555A5 (en)
JP2006005340A5 (en)