JP2005248087A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an epoxy resin composition for semiconductor encapsulation which does not contain a halogen flame retardant and an antimony compound, is excellent in filling properties, and can be applied to a device liable to be affected by α-rays radiated by a constituent material; and a semiconductor device using the composition. <P>SOLUTION: The epoxy resin composition for semiconductor encapsulation includes (A) an epoxy resin, (B) a phenol resin, (C) a hardening promotor, (D) an inorganic filler except for aluminum hydroxide, and (E) aluminum hydroxide. The content of the aluminum hydroxide with a particle size of ≥10 μm is less than 5 wt.%. The total amount of uranium and thorium contained in the aluminum hydroxide is less than 10 ppb. The semiconductor device is prepared by encapsulating a semiconductor element with the epoxy resin composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device which does not contain a halogen flame retardant and an antimony compound.

Electronic components such as diodes, transistors, and integrated circuits are mainly sealed with an epoxy resin composition. In these epoxy resin compositions, a halogen-based flame retardant and an antimony compound have been conventionally blended in order to impart flame retardancy. There is a demand for an epoxy resin composition that imparts flammability, and phosphorus compounds, hydrated metal compounds, boron compounds, silicone compounds, and the like have been studied. Several methods of adding aluminum hydroxide have been proposed in order to achieve both flame retardancy and excellent solder resistance and moisture resistance (see, for example, Patent Document 1, Patent Document 2, and Patent Document 3). Conventionally, what satisfies the required level of the market has been obtained.
However, due to downsizing and thinning accompanying recent performance improvements of semiconductor devices, it has been required to reliably fill narrow gaps in semiconductor devices, and the conventional techniques described above are insufficient. It was becoming. As one of the semiconductor devices having the narrowest gap, for example, there is a method (flip chip method) in which a semiconductor element is mounted on a mother board or daughter board on which a circuit is formed with a face-down structure.
Furthermore, in order to prevent malfunctions in devices that are susceptible to α-rays, it is necessary to reduce the α-rays emitted from uranium, thorium, and its destructive substances in the constituent materials of the epoxy resin composition, Development of a resin composition using aluminum hydroxide corresponding to all of these has been desired.

JP 10-152547 A (pages 2 to 4) JP 2002-187999 A (pages 2 to 5) JP 2002-212397 A (pages 2 to 6)

  The present invention is an epoxy for semiconductor encapsulation that does not contain a halogen-based flame retardant and an antimony compound, has excellent flame resistance and filling properties, and can also be applied to devices that are easily affected by α rays emitted from constituent materials. A resin composition and a semiconductor device are provided.

The present invention
[1] An epoxy resin (A), a phenol resin (B), a curing accelerator (C), an inorganic filler (D) excluding aluminum hydroxide, and aluminum hydroxide (E), and particles in the aluminum hydroxide An epoxy resin composition for semiconductor encapsulation, wherein the proportion of particles having a diameter of 10 μm or more is less than 5% by weight, and the total amount of uranium and thorium contained in the aluminum hydroxide is less than 10 ppb;
[2] The epoxy resin composition for semiconductor encapsulation according to item [1], wherein the amount of Na ₂ O contained in the aluminum hydroxide is 0.1% by weight or less,
[3] The epoxy for semiconductor encapsulation according to [1] or [2], wherein the temperature at which the weight reduction rate of the aluminum hydroxide reaches 10%, measured at a temperature increase rate of 10 ° C./min, is 250 ° C. or higher. Resin composition,
[4] The epoxy resin composition for semiconductor encapsulation according to [1], [2] or [3], wherein the total amount of uranium and thorium contained in the inorganic filler is less than 1 ppb,
[5] An epoxy resin composition comprising an epoxy resin (A), a phenol resin (B), a curing accelerator (C), an inorganic filler (D) excluding aluminum hydroxide, and aluminum hydroxide (E). The ratio of particles having a particle diameter of 10 μm or more in the aluminum hydroxide is less than 5% by weight, and the total amount of uranium and thorium contained in the entire epoxy resin composition is less than 1 ppb. Epoxy resin composition for stopping,
[6] A semiconductor device comprising a semiconductor element sealed using the epoxy resin composition according to any one of [1] to [5],
It is.

  According to the present invention, in addition to excellent flame resistance, solder resistance, and moisture resistance, the device is excellent in filling of narrow voids that could not be obtained by the conventional technology, and is easily affected by α rays emitted from the constituent materials. Can also respond.

The present invention provides an epoxy resin, a phenol resin, a curing accelerator, an inorganic filler, a proportion of particles having a particle size of 10 μm or more is less than 5% by weight, and the total amount of uranium and thorium contained is less than 10 ppb. By using an epoxy resin composition containing aluminum, etc., a remarkable effect is obtained that it is excellent in flame resistance and filling properties, and can also be applied to devices that are easily affected by α rays emitted from the constituent materials. It is what
Hereinafter, the present invention will be described in detail.

  Epoxy resins used in the present invention are monomers, oligomers, and polymers in general having two or more epoxy groups in one molecule, and their molecular weight and molecular structure are not particularly limited. For example, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenylene skeleton-containing phenol aralkyl type epoxy resin, stilbene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, naphthol novolak type epoxy resin, triphenolmethane type epoxy resin , Dicyclopentadiene-modified phenol type epoxy resin, terpene-modified phenol type epoxy resin, hydroquinone type epoxy resin, and the like. These may be used alone or in combination. In order to obtain excellent solder resistance, it is preferable to fill more inorganic filler using a crystalline epoxy resin having a very low melt viscosity during molding.

  The phenol resin used in the present invention is a monomer, oligomer, or polymer in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited. For example, phenol novolak resin, cresol Examples thereof include novolak resins, dicyclopentadiene-modified phenol resins, phenol aralkyl resins, phenol aralkyl resins having a biphenylene skeleton, terpene-modified phenol resins, and triphenolmethane type resins. These may be used alone or in combination. In addition, in order to obtain excellent solder resistance, a material having a low viscosity is preferable like the epoxy resin.

  The equivalent ratio of the number of epoxy groups of all epoxy resins and the number of phenolic hydroxyl groups of all phenol resins used in the present invention is preferably 0.5 to 2, and more preferably 0.7 to 1.5. If it is out of the above range, the moisture resistance, curability and the like may be lowered, which is not preferable.

  The curing accelerator used in the present invention is not particularly limited as long as it accelerates the reaction between an epoxy group and a phenolic hydroxyl group. For example, a diastere such as 1,8-diazabicyclo (5,4,0) undecene-7 is used. Zabicycloalkene and its derivatives, organic phosphines such as triphenylphosphine and methyldiphenylphosphine, tetraphenylphosphonium / tetraphenylborate, tetraphenylphosphonium / tetrabenzoic acid borate, tetraphenylphosphonium / tetranaphthoic acid borate, tetraphenylphosphonium -Tetranaphthoyloxyborate, tetrasubstituted phosphonium such as tetraphenylphosphonium, tetranaphthyloxyborate, tetrasubstituted borate, and the like. These may be used alone or in combination of two or more. It may be used in combination.

  As the inorganic filler excluding aluminum hydroxide used in the present invention, those generally used in an epoxy resin composition for semiconductor encapsulation can be used. For example, fused spherical silica, fused crushed silica, crystalline silica, talc, alumina, titanium white, silicon nitride and the like can be mentioned, and the most suitably used is fused spherical silica. These inorganic fillers may be used alone or in combination. These may be surface-treated with a coupling agent. The shape of the inorganic filler is preferably as spherical as possible and the particle size distribution is broad in order to improve fluidity. The content of the total inorganic filler including the aluminum hydroxide used in the present invention is 83 to 93% by weight, preferably 84 to 90% by weight in the total epoxy resin composition. If it is less than the lower limit, low hygroscopicity and low thermal expansion cannot be obtained, and solder resistance may be insufficient. Exceeding the upper limit is not preferable because the fluidity is lowered, and there is a risk of defective filling during molding, or problems such as deformation of the gold wire in the semiconductor device due to increased viscosity.

The aluminum hydroxide used in the present invention is essential in that the proportion of particles having a particle size of 10 μm or more is less than 5% by weight and the total amount of uranium and thorium contained is less than 10 ppb. In general, aluminum hydroxide acts as a flame retardant, and its flame retardant mechanism is known. In order to obtain excellent solder resistance and moisture resistance, techniques for realizing excellent flame resistance with a smaller amount of added aluminum hydroxide have been introduced in the above-mentioned patent documents and the like. When aluminum is used, α rays emitted from uranium, thorium, and its destructive substances can be reduced, and as a result, application to a device that is easily affected by α rays is facilitated. In this case, however, the total amount of uranium and thorium of the inorganic filler excluding aluminum hydroxide needs to be similarly considered. That is, in order to reduce the α dose emitted from the entire resin composition to a level that can be applied to devices that are easily affected by α rays, the total amount of uranium and thorium contained in the inorganic filler is less than 1 ppb. And the total amount of uranium and thorium contained in aluminum hydroxide must be less than 10 ppb, or the total amount of uranium and thorium contained in the entire epoxy resin composition must be less than 1 ppb.
In addition, when the total amount of uranium and thorium contained in aluminum hydroxide is 10 ppb or more, it is necessary to suppress the amount of aluminum hydroxide added to a small amount in order to apply to devices that are easily affected by α rays. In some cases, it becomes difficult to impart flame retardancy with aluminum hydroxide alone.

In order to measure the amount of uranium and thorium in aluminum hydroxide here, after dissolving the acid with nitric acid or the like, uranium and thorium are adsorbed on the ion exchange resin in order to remove the aluminum that interferes with the measurement. . The adsorbed and retained uranium and thorium are eluted with a small amount of eluent and concentrated. The sample prepared here can be measured using an inductively coupled plasma mass spectrometer (ICP-MS) apparatus SPQ-9000 manufactured by Seiko Instruments Inc.
Moreover, in order to measure the amount of uranium and thorium in silica here, after dissolving the main component by volatilizing in hydrogen fluoride, the residue was dissolved in nitric acid and the supernatant treated with a centrifuge The liquid can be measured using an inductively coupled plasma mass spectrometer (ICP-MS) apparatus SPQ-9000 manufactured by Seiko Instruments Inc.
In addition, in order to measure the amount of uranium and thorium in the epoxy resin composition here, the epoxy resin composition was heated and ashed at 700 ° C. for 4 hours, and then dissolved in hydrogen fluoride to form silica. After the main component is volatilized and further dissolved with nitric acid or the like, uranium and thorium are adsorbed on the ion exchange resin in order to remove aluminum which interferes with the measurement. The adsorbed and retained uranium and thorium are eluted with a small amount of eluent and concentrated. The sample prepared here can be measured using an inductively coupled plasma mass spectrometer (ICP-MS) apparatus SPQ-9000 manufactured by Seiko Instruments Inc.

  In order to fill narrow gaps, it is necessary to make the proportion of particles of aluminum hydroxide used in the present invention having a particle size of 10 μm or more less than 5% by weight. When particles having a particle diameter of 10 μm or more are 5% by weight or more, there is a high possibility of causing unfilling in a semiconductor device having a narrow filling region of several tens of μm.

  As for the particle size of aluminum hydroxide, the inorganic filler is sampled according to JIS M8100 powder mixture-sampling method general rule, and according to JIS R 1622-1995 Sample preparation general rule for fine ceramic raw material particle size distribution measurement. In accordance with a particle size distribution measuring method by a laser diffraction / scattering method of JIS R 1629-1997 fine ceramic raw material prepared using aluminum hydroxide as a measurement sample, Microtrack particle size distribution measuring device 9320HRA manufactured by Nikkiso Co., Ltd. This is a value measured after ultrasonic dispersion in a solvent using (X-100) (laser diffraction scattering method) or the like.

The amount of Na ₂ O contained in the aluminum hydroxide is preferably 0.1% by weight or less. If it exceeds 0.1% by weight, the amount of sodium ions liberated as impurities increases, which may reduce the moisture resistance.

  Moreover, it is preferable that the temperature at which the weight loss rate of aluminum hydroxide reaches 10%, measured at a temperature rising rate of 10 ° C./min, is 250 ° C. or higher. If the weight reduction rate of 10% is less than 250 ° C., solder resistance may be lowered depending on the conditions of IR reflow treatment.

  The weight reduction rate of aluminum hydroxide here starts with weighing 10 mg of aluminum hydroxide and using a differential thermothermal gravimetric simultaneous measurement device TG / DTA220 (horizontal differential balance method) manufactured by Seiko Denshi Kogyo Co., Ltd. It is a value measured at a temperature rising rate of 10 ° C./min under an air atmosphere as a temperature of 30 ° C., an end temperature of 450 ° C., and the like.

  In the present invention, it is not necessary to use aluminum hydroxide alone as a flame retardant, and for example, it may be used in combination with a flame retardant such as magnesium hydroxide, zinc borate, zinc molybdate, and phosphazene. The amount of aluminum hydroxide used in the present invention is preferably 1 to 10% by weight, more preferably 2 to 5% by weight in the total epoxy resin composition. If it is less than the lower limit, the intended flame resistance cannot be obtained, and if it exceeds the upper limit, solder resistance, moisture resistance, fluidity, and curability may be impaired.

  In addition to the components (A) to (E), the epoxy resin composition of the present invention includes silane coupling agents such as epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane, vinyl silane, and titanate coupling as necessary. Agents, coupling agents such as aluminum coupling agents, aluminum / zirconium coupling agents, natural waxes such as carnauba wax, synthetic waxes such as polyethylene wax, higher fatty acids such as stearic acid and zinc stearate and metal salts thereof, paraffins, etc. Various additives such as a mold release agent, a colorant such as carbon black and bengara, an inorganic ion exchanger such as bismuth oxide hydrate, and an antioxidant can be appropriately blended.

  In the epoxy resin composition of the present invention, the components (A) to (E) and other additives are mixed at room temperature using a mixer or the like, heated and kneaded with a kneader such as a roll, kneader, or extruder, and cooled. Obtained by post-grinding.

  In order to seal an electronic component such as a semiconductor element and manufacture a semiconductor device using the epoxy resin composition of the present invention, it can be cured by a conventional molding method such as transfer molding, compression molding, injection molding, etc. Good. As other semiconductor device manufacturing methods, known methods can be used.

EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. The blending ratio is parts by weight.
In addition, the amount of uranium and thorium in silica, aluminum hydroxide, and epoxy resin composition, and the average particle diameter, particle size distribution, and 10% weight reduction temperature of aluminum hydroxide were measured as follows.

[Measurement of uranium and thorium in aluminum hydroxide]
After aluminum hydroxide is dissolved with acid, uranium and thorium are adsorbed on the ion exchange resin. The adsorbed and retained uranium and thorium are eluted with a small amount of eluent and concentrated. The sample prepared here was measured using an inductively coupled plasma mass spectrometer (ICP-MS) apparatus SPQ-9000 manufactured by Seiko Instruments Inc.
[Measurement of uranium and thorium in silica]
Silica was dissolved in hydrogen fluoride to volatilize the main component, the residue was dissolved in nitric acid, and the supernatant treated with a centrifuge was subjected to inductively coupled plasma mass spectrometry (ICP-MS) manufactured by Seiko Instruments Inc. ) Measured using apparatus SPQ-9000.
[Measurement of uranium content and thorium content in epoxy resin composition]
After the epoxy resin composition is ashed by heating at 700 ° C. for 4 hours, it is dissolved in hydrogen fluoride to volatilize the silica main component, and further dissolved with an acid, and then aluminum that interferes with the measurement is removed. Therefore, uranium and thorium are adsorbed on the ion exchange resin. The adsorbed and retained uranium and thorium are eluted with a small amount of eluent and concentrated. The sample prepared here was measured using an inductively coupled plasma mass spectrometer (ICP-MS) apparatus SPQ-9000 manufactured by Seiko Instruments Inc.

[Measurement of average particle size and particle size distribution of aluminum hydroxide]
JIS M8100 powder mixture-Collect aluminum hydroxide according to the general rules of sampling, and prepare aluminum hydroxide as a sample for measurement according to JIS R 1622-1995 Sample preparation general rules for fine ceramic raw material particle size distribution measurement According to JIS R 1629-1997 fine ceramic raw material particle size distribution measuring method by laser diffraction / scattering method, Microtrack particle size distribution measuring device 9320HRA (X-100) (laser diffraction scattering method) manufactured by Nikkiso Co., Ltd. ) Etc., and measured after ultrasonic dispersion in a solvent.

[The temperature at which the weight reduction rate of aluminum hydroxide reaches 10%]
Weigh 10 mg of aluminum hydroxide and use a differential thermothermal gravimetric simultaneous measurement device TG / DTA220 (horizontal differential balance method) manufactured by Seiko Denshi Kogyo Co., Ltd. at an initial temperature of 30 ° C. and an end temperature of 450 ° C. The temperature at which the weight loss rate reached 10% was determined when measured at a temperature increase rate of 10 ° C./min.

Example 1
Biphenyl type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., YX4000K, melting point 105 ° C., epoxy equivalent 185) 7.50 parts by weight Phenol novolac resin (softening point 80 ° C., hydroxyl group equivalent 105) 2.80 parts by weight Biphenylene skeleton Phenol aralkyl resin (Maywa Kasei Co., Ltd., MEH-7851SS, softening point 65 ° C., hydroxyl group equivalent 203) 2.80 parts by weight 1,8-diazabicyclo (5,4,0) undecene-7 0.20 parts by weight silica A (average particle size 3.8 μm, specific surface area 4.5 m ² / g, total amount of uranium and thorium less than 1 ppb) 56.00 parts by weight Silica B (average particle size 0.5 μm, specific surface area 5.4 m ² / g The total amount of uranium and thorium is less than 1 ppb) 25.00 parts by weight Aluminum hydroxide A1 (average particle size 3.0 μm, particle size 1 μm or more percentage 3% by weight of the particles, uranium and the total amount less than 1ppb of thorium, Na ₂ O content 0.06%, weight reduction of 10% reached a temperature 260 ° C.) 5.00 parts by weight of γ- mercaptopropyltrimethoxysilane 0.20 parts by weight Carnauba wax 0.20 parts by weight Carbon black 0.30 parts by weight were mixed with a mixer, kneaded using two rolls with surface temperatures of 90 ° C. and 45 ° C., cooled, pulverized, and epoxy A resin composition was obtained. The obtained epoxy resin composition was evaluated by the following methods. The results are shown in Table 1.

Evaluation method Spiral flow: Using a mold for spiral flow measurement according to EMMI-1-66, measurement was performed at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 2 minutes. The unit is cm.

  Deformation rate of wire: Using a transfer molding machine, a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, a curing time of 2 minutes, and a 352-pin BGA (the substrate is a bismaleimide / triazine resin / glass cloth substrate having a thickness of 0.56 mm, The size of the semiconductor device is 30 mm × 30 mm, the thickness is 1.17 mm, the size of the semiconductor element is 10 mm × 10 mm, the thickness is 0.35 mm, and the bonding pads of the semiconductor element and the circuit board are bonded with a gold wire with a diameter of 25 μm.) And the obtained semiconductor device was observed with a soft X-ray fluoroscope, and the deformation rate of the gold wire was expressed as a ratio of (flow rate) / (gold wire length). Units%.

  Simulated mold filling property: A rectangular column of 9 mm × 9 mm × 0.42 mm (thickness) is rectangular in a rectangular channel having a length of 145 mm, a width of 15 mm, and a thickness of 0.5 mm, having a gate at one end in the longitudinal direction. 6 in series in the center of the mold channel (the first square column is 5 mm from the gate, and the interval between each square column and the square column is 6 mm) For evaluation assuming narrow path filling with 80 μm gap A rectangular flow of 9 mm × 9 mm × 0.45 mm (thickness) is flown in a rectangular flow path in a rectangular flow channel having a length of 145 mm, a width of 15 mm, and a thickness of 0.5 mm. 6 molds in series at the center of the road (the first square column is 5mm from the gate, and the interval between each square column and the square column is 6mm) Mold temperature 175 ° C, injection pressure 9.8MPa Curing time and transfer molding at 2 minutes was determined 80μm and 50μm filling of gaps (the unfilled, the presence or absence of voids).

  Solder resistance: 352-pin BGA package molded by evaluation of gold wire deformation rate is post-cured at 175 ° C. for 2 hours, and each of the obtained 10 semiconductor devices is placed in an environment of 85 ° C. and relative humidity 60%. After treatment for 168 hours or 60 hours at 60 ° C. and 60% relative humidity for 120 hours, IR reflow treatment at a peak temperature of 260 ° C. (255 ° C. or more is 10 seconds) was performed. The presence or absence of internal peeling and cracks after the treatment was observed with an ultrasonic flaw detector, and the number of defective semiconductor devices was counted. When the number of defective semiconductor devices was n, it was displayed as n / 10.

Moisture resistance: Using a transfer molding machine, mold temperature of 175 ° C., injection pressure of 9.8 MPa, curing time of 2 minutes, 16 pSOP (mold size 11 mm × 7 mm, thickness 1.95 mm, semiconductor element size 3.5 mm × 3.0 mm The semiconductor element bonding pad and 42 alloy frame are bonded to each other at 12 locations with a 25 μm diameter gold wire. The semiconductor element has an aluminum wiring width of 10 μm, an inter-wiring distance of 10 μm, and an aluminum deposition thickness of 1 μm. A sample was obtained by molding and post-curing at 175 ° C. for 2 hours. After 5 semiconductor devices obtained were cooled to room temperature, 20V was applied in an environment of 140 ° C. and 85% relative humidity (6 out of 12 bonded locations were anodes and 6 locations were cathodes), treated for 500 hours, and then packaged. The resistance value of the circuit was measured by applying a tester to each terminal. When the resistance value exceeded 200% of the initial value, it was regarded as defective, and indicated as n / 15 when there were n defective portions (Anode: 3 locations per package x 5, Cathode: 3 locations per package x 5).

  Flame resistance: Using a transfer molding machine, a test piece (127 mm × 12.7 mm, thickness 3.2 mm) was molded at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 2 minutes, and 175 ° C. for 8 hours. After curing. The obtained test piece was determined according to the UL-94 vertical method.

α Dose: A test piece (140 mm × 120 mm, thickness 0.2 mm) was molded by compression molding at a mold temperature of 175 ° C. and a curing time of 2 minutes. Using the obtained six test pieces (total 1008 cm ² ), the low-level α-ray measuring device LACS-4000M (applied voltage 1.9 KV, PR-10 gas (argon: methane = 9: 1) 100 m / min, effective count) The α dose was measured at time 88 h), and 0.001 c / cm ² · h or less was determined to be OK and 0.001 c / cm ² · h was determined to be NG.

Examples 2-9, Comparative Examples 1-2
According to the composition of Table 1 and Table 2, an epoxy resin composition was obtained in the same manner as in Example 1 and evaluated in the same manner. These evaluation results are shown in Tables 1 and 2.
Aluminum hydroxide used in other than Example 1 is shown below.
Aluminum hydroxide A2 (average particle size 2.8 μm, proportion of particles having a particle size of 10 μm or more 1% by weight, total amount of uranium and thorium less than 1 ppb, Na ₂ O amount 0.06%, weight reduction rate 10% reaching temperature 260 ℃)
Aluminum hydroxide A3 (average particle size 3.1 μm, proportion of particles having a particle size of 10 μm or more 4% by weight, total amount of uranium and thorium less than 1 ppb, Na ₂ O amount 0.06%, weight reduction rate 10% reaching temperature 260 ℃)
Aluminum hydroxide A4 (average particle size 3.0 μm, proportion of particles having a particle size of 10 μm or more 3% by weight, total amount of uranium and thorium less than 1 ppb, Na ₂ O amount 0.04%, weight reduction rate 10% reaching temperature 260 ℃)
Aluminum hydroxide A5 (average particle size 3.0 μm, proportion of particles having a particle size of 10 μm or more 3% by weight, total amount of uranium and thorium less than 1 ppb, Na ₂ O amount 0.08%, weight reduction rate 10% reaching temperature 260 ℃)
Aluminum hydroxide B (average particle size 4.5 μm, proportion of particles having a particle size of 10 μm or more 15% by weight, total amount of uranium and thorium 40 ppb, Na ₂ O amount 0.06%, weight reduction rate 10% ultimate temperature 260 ° C. )
Aluminum hydroxide C (average particle size 8.0 μm, proportion of particles having a particle size of 10 μm or more 35% by weight, uranium and thorium total amount 41 ppb, Na ₂ O amount 0.2%, weight reduction rate 10% ultimate temperature 240 ° C. )

  The epoxy resin composition for semiconductor encapsulation of the present invention does not contain a halogen flame retardant and an antimony compound, and has excellent flame resistance, solder resistance, moisture resistance, and filling properties, and is released from the constituent materials. It is particularly useful for applications in devices that are susceptible to line effects.

Claims (6)

An epoxy resin (A), a phenol resin (B), a curing accelerator (C), an inorganic filler (D) excluding aluminum hydroxide, and aluminum hydroxide (E), and a particle diameter of 10 μm or more in the aluminum hydroxide And a total amount of uranium and thorium contained in the aluminum hydroxide is less than 10 ppb. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the amount of Na ₂ O contained in the aluminum hydroxide is 0.1% by weight or less. The epoxy resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the temperature at which the weight reduction rate of the aluminum hydroxide reaches 10%, measured at a temperature rising rate of 10 ° C / min, is 250 ° C or higher. The epoxy resin composition for semiconductor encapsulation according to claim 1, 2, or 3, wherein the total amount of uranium and thorium contained in the inorganic filler is less than 1 ppb. An epoxy resin composition comprising an epoxy resin (A), a phenol resin (B), a curing accelerator (C), an inorganic filler (D) excluding aluminum hydroxide, and aluminum hydroxide (E), wherein the water An epoxy for semiconductor encapsulation, wherein the proportion of particles having a particle size of 10 μm or more in aluminum oxide is less than 5% by weight, and the total amount of uranium and thorium contained in the entire epoxy resin composition is less than 1 ppb Resin composition. A semiconductor device comprising a semiconductor element sealed with the epoxy resin composition according to claim 1.