JP2005244204A5

JP2005244204A5 -

Info

Publication number: JP2005244204A5
Application number: JP2005018883A
Authority: JP
Filing date: 2005-01-26
Publication date: 2008-03-06

Claims

  A conductive film material including a photosensitive material is discharged by a droplet discharge method over a substrate having an insulating surface to form a first conductive film pattern,
  Exposing the first conductive film pattern by selectively irradiating a laser beam;
  Developing the exposed first conductive film pattern to remove a portion of the first conductive film pattern that has not been irradiated with the laser light to form a second conductive film pattern; A method for manufacturing a semiconductor device.

On a substrate having an insulating surface, a conductive film material including a photosensitive material to form a first conductive film pattern by discharging a droplet discharge method,
And it was selectively irradiated for exposure with laser light to the first conductive film pattern,
Developing the exposed first conductive layer pattern to form a narrower second conductive layer pattern width than the first conductive film pattern,
Forming a insulation Enmaku covering the second conductive film pattern,
The method for manufacturing a semiconductor device comprising the Turkey to form a semiconductor layer on the insulation film.

In 請 Motomeko 2,
The method for manufacturing a semiconductor device, wherein the photosensitive material is a negative type.

In 請 Motomeko 2,
The method for manufacturing a semiconductor device, wherein the photosensitive material is a positive type.

  Forming a semiconductor film over a substrate having an insulating surface;
  A conductive film pattern containing a positive photosensitive material is discharged onto the semiconductor film by a droplet discharge method to form a conductive film pattern,
  The conductive film pattern is selectively irradiated with a laser beam for exposure,
  A method for manufacturing a semiconductor device, comprising developing the exposed conductive film pattern to form a source wiring and a drain wiring.

  Forming a gate electrode over a substrate having an insulating surface;
  Forming a gate insulating film covering the gate electrode;
  Forming a semiconductor film on the gate insulating film;
  A conductive film pattern containing a positive photosensitive material is discharged onto the semiconductor film by a droplet discharge method to form a conductive film pattern,
  The conductive film pattern is selectively irradiated with a laser beam for exposure,
  A method for manufacturing a semiconductor device, comprising developing the exposed conductive film pattern to form a source wiring and a drain wiring.

In claim 5 or claim 6,
An upper layer portion of the semiconductor film is etched using the source wiring and the drain wiring as a mask.

The gate electrode is formed on a base plate having an insulating surface,
Forming a gate insulating film covering the gate electrode;
A first semiconductor film is formed on the gate insulating film,
A second semiconductor film containing an impurity element imparting n-type or p-type is formed on the first semiconductor film,
A conductive film pattern containing a positive photosensitive material is discharged onto the second semiconductor film by a droplet discharge method to form a conductive film pattern.
And it was selectively irradiated for exposure with Les Za light to the conductive film pattern,
Developing the exposed the conductive pattern to form a source wiring and the drain wiring,
Said source wiring and the drain wiring as a mask, a method for manufacturing a semiconductor device comprising the TURMERIC line etching of the upper layer portion and the second semiconductor layer of the first semiconductor film.

In any one of Claim 5 thru | or Claim 8,
A method for manufacturing a semiconductor device, wherein the laser light is irradiated from a surface side of the substrate.

  Forming a gate electrode over a substrate having an insulating surface;
  A conductive film material containing a negative photosensitive material is discharged on the gate electrode by a droplet discharge method to form a first conductive film pattern,
  The first conductive film pattern is exposed by irradiating a laser beam from the back side of the substrate with the gate electrode as a mask,
  The method for manufacturing a semiconductor device, wherein the exposed first conductive film pattern is developed to form a second conductive film pattern.

In claim 10,
A method for manufacturing a semiconductor device, wherein a source wiring and a drain wiring are formed using the second conductive film pattern.

  Forming a gate electrode over a substrate having an insulating surface;
  Forming a gate insulating film covering the gate electrode;
  Forming a semiconductor film on the gate insulating film;
  A conductive film pattern including a negative photosensitive material is discharged on the semiconductor film by a droplet discharge method to form a conductive film pattern,
  The conductive film pattern is exposed by irradiating a laser beam from the back side of the substrate with the gate electrode as a mask,
  A method for manufacturing a semiconductor device, comprising developing the exposed conductive film pattern to form a source wiring and a drain wiring.

In claim 12,
An upper layer portion of the semiconductor film is etched using the source wiring and the drain wiring as a mask.

Forming a Gate electrode on a base plate having an insulating surface,
Forming a gate insulating film covering the gate electrode;
A first semiconductor film is formed on the gate insulating film,
A second semiconductor film containing an impurity element imparting n-type or p-type is formed on the first semiconductor film,
Forming a conductive film pattern by discharging a conductive film material containing a negative photosensitive material on the second semiconductor film by a droplet discharge method;
The conductive film pattern is exposed by irradiating a laser beam from the back side of the substrate with the gate electrode as a mask,
The method for manufacturing a semiconductor device comprising a benzalkonium form a source over scan wiring and a drain wiring by developing the exposed said conductive pattern.

In claim 14,
A method for manufacturing a semiconductor device, comprising etching the upper layers of the first semiconductor film and the second semiconductor film using the source wiring and the drain wiring as a mask.

In any one of Claims 13 thru / or Claim 15,
The method for manufacturing a semiconductor device, wherein the source wiring and the drain wiring are formed in a self-aligned manner by irradiating the laser beam with the gate electrode as a mask for exposure.

In any one of Claims 1 thru | or 16 ,
The method for manufacturing a semiconductor device, wherein the conductive film material containing the photosensitive material contains a compound of Ag, Au, Cu, Ni, Al, Pt or a simple substance.

A Gate electrode on a first substrate having an insulating surface,
And Gate insulating film before Kige over gate electrode on,
A semiconductor film including a channel formation region on the gate insulating film;
Anda source over scan line and a wiring on said semiconductor film,
The channel length of the channel formation region is equal to the width of the gate electrode, and, wherein a is equal to the distance between the source wiring and the drain wiring.

In claim 18,
A semiconductor device having a pixel electrode over the source wiring or the drain wiring.

In claim 18 or claim 19 ,
Said semiconductor film including a channel formation region, wherein a hydrogen or halogen hydrogen is a non single crystal semiconductor film is added or a polycrystalline semiconductor film.

In claim 18 or claim 19,
The semiconductor device including the channel formation region is an amorphous semiconductor film or a semi-amorphous semiconductor film.

In any one of Claims 18 to 21 ,
It said source wiring and the drain wiring, wherein a light-sensitive material including it.

According to any one of claims 18 through claim 22,
A second substrate facing the first substrate;
Wherein a Rukoto to have a, and liquid crystal held between the first substrate and the second substrate.

According to any one of claims 18 through claim 22,
A first electrode electrically connected to the source wiring or the drain wiring; a layer containing an organic compound on the first electrode; and a second electrode on the layer containing the organic compound. wherein a to have a that the light emitting element.