JP2005242264A5 - - Google Patents

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JP2005242264A5
JP2005242264A5 JP2004055546A JP2004055546A JP2005242264A5 JP 2005242264 A5 JP2005242264 A5 JP 2005242264A5 JP 2004055546 A JP2004055546 A JP 2004055546A JP 2004055546 A JP2004055546 A JP 2004055546A JP 2005242264 A5 JP2005242264 A5 JP 2005242264A5
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thin film
less
neodymium
silver
transparent conductive
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また、ITOとAgの組合せからなる透明導電性薄膜、低い面抵抗を実現しようとすると、波長が400〜500nm及び600〜700nmの光の透過率が500〜600nmの透過率に比較して低く、可視光線透過率の面でも不利となる傾向がある。一方、PDP光学フィルター用途に透明導電性薄膜を利用する場合、透明導電性薄膜は可視光全域にわたって、できるだけ均一で高い透過率を示すこと、フィルターとしての光学設計等の自由度を高くすることが出来る。このため、透過スペクトルが可視光領域において、よりフラット、かつ、高透過である透明導電性薄膜積層体の出現が望まれている。
In addition, the transparent conductive thin film made of a combination of ITO and Ag has a lower transmittance of light having wavelengths of 400 to 500 nm and 600 to 700 nm than that of 500 to 600 nm in order to achieve low sheet resistance. , There is a tendency to be disadvantageous in terms of visible light transmittance. On the other hand, when using a transparent conductive thin film on the PDP optical filter applications, transparent conductive thin film over the entire visible light region, by showing possible uniform and high transmittance, increasing the flexibility of such optical design of the filter I can do it. For this reason, the appearance of a transparent conductive thin film laminate having a transmission spectrum that is flatter and more transparent in the visible light region is desired.

本発明の課題を解決するための手段として、高屈折率層としてインジウムとセリウムと酸素からなる薄膜層を採用することにより、高屈折率層に隣接する銀主体の合金金属薄膜層の“やけ”を防止でき、その結果得られたフラットなスペクトル形状かつ高い透過率、さらに高い導電性を維持した透明導電性薄膜積層体を得ることができることを見出した。すなわち、本発明は、
(1)少なくともインジウムとセリウムと酸素からなる高屈折率層(a)と、
銀もしくは銀合金からなる金属薄膜層(b)とが、
両者の合計で5層〜13層繰り返して積層し、該金属薄膜層(b)の内、2つの主表面のそれぞれに最も近い金属薄膜層をそれぞれ(bL)、(bH)として、
金属薄膜層(bL)の膜厚と金属薄膜層(b)の膜厚とが異なることを特徴とする透明導電性薄膜積層体であり、
(2)好ましくは、銀合金が、金、銅、パラジウム、プラチナ、ネオジム、ビスマスから選ばれる少なくとも1種の金属を含む銀合金であることを特徴とする(1)に記載の透明導電性薄膜積層体であり、
(3) 好ましくは、高屈折率層(a)のセリウムの含有率が、0.1wt%以上、30.0wt%以下であることを特徴とする(1)に記載の透明導電性薄膜積層体であり、
(4) 好ましくは、金属薄膜層(b)のパラジウム含有率が0.1wt%以上、3.0wt%以下であり、銅の含有率が0.1wt%以上、3.0wt%以下であることを特徴とする(1)に記載の透明導電性薄膜積層体であり、
(5) 好ましくは、金属薄膜層(b)のネオジム含有率が0.1wt%以上、3.0wt%以下であり、金の含有率が0.1wt%以上、3.0wt%以下であることを特徴とする(1)に記載の透明導電性薄膜積層体であり、
(6) 上記の透明導電性薄膜積層体を用いたプラズマディスプレイパネル用光学フィルターである。
As a means for solving the problems of the present invention, by adopting a thin film layer made of indium, cerium, and oxygen as a high refractive index layer, “burnt” of a silver-based alloy metal thin film layer adjacent to the high refractive index layer. It has been found that a transparent conductive thin film laminate that maintains the flat spectrum shape, high transmittance, and high conductivity obtained as a result can be obtained. That is, the present invention
(1) a high refractive index layer (a) comprising at least indium, cerium and oxygen;
A metal thin film layer (b) made of silver or a silver alloy,
A total of 5 to 13 layers is repeatedly laminated, and among the metal thin film layers (b), the metal thin film layers closest to each of the two main surfaces are (b L ) and (b H ), respectively.
A transparent conductive thin film laminate, wherein the film thickness of the metal thin film layer (b L ) and the film thickness of the metal thin film layer (b H ) are different,
(2) The transparent conductive thin film according to (1) , wherein the silver alloy is preferably a silver alloy containing at least one metal selected from gold, copper, palladium, platinum, neodymium , and bismuth. A laminate,
(3) Preferably, the cerium content of the high refractive index layer (a) is 0.1 wt% or more and 30.0 wt% or less, and the transparent conductive thin film laminate according to (1) And
(4) Preferably, the metal thin film layer (b) has a palladium content of 0.1 wt% or more and 3.0 wt% or less, and a copper content of 0.1 wt% or more and 3.0 wt% or less. The transparent conductive thin film laminate according to (1), characterized in that
(5) Preferably, the neodymium content of the metal thin film layer (b) is 0.1 wt% or more and 3.0 wt% or less, and the gold content is 0.1 wt% or more and 3.0 wt% or less. The transparent conductive thin film laminate according to (1), characterized in that
(6) An optical filter for a plasma display panel using the transparent conductive thin film laminate.

金属薄膜層(b)の材料は、銀もしくは銀を主体とした合金である。銀合金の銀以外の金属としては、公知の物を用いることが出来る。好ましくは金、銅、パラジウム、プラチナ、ネオジム、ビスマスから選ばれる1種類以上の金属を例示できる。特に、銀とパラジウムと銅との合金、銀とネオジムと金との合金、及び、銀とネオジムと銅との合金が好ましい。
The material of the metal thin film layer (b) is silver or an alloy mainly composed of silver. As the metal other than silver of the silver alloy, known materials can be used. Preferably, one or more kinds of metals selected from gold, copper, palladium, platinum, neodymium , and bismuth can be exemplified. In particular, an alloy of silver, palladium, and copper, an alloy of silver, neodymium, and gold, and an alloy of silver, neodymium, and copper are preferable.

銀とネオジムと金を含む合金に関して、ネオジムと金の好ましい含有率は、ネオジムが0.1wt%以上、3.0wt%以下であり、金が0.1wt%以上、3.0wt%以下である。より好ましくは、ネオジムが0.1wt%以上、1.5wt%以下、金が0.1wt%以上、1.5wt%以下である。さらに好ましくは、ネオジムが0.4wt%以上、1.0wt%以下、金が0.1wt%以上、1.0wt%以下である。
Regard alloy containing silver and neodymium gold, preferred content of neodymium gold is neodymium 0.1 wt% or more and less 3.0 wt%, gold 0.1 wt% or more, or less 3.0 wt% . More preferably, neodymium is 0.1 wt% or more and 1.5 wt% or less, and gold is 0.1 wt% or more and 1.5 wt% or less. More preferably, neodymium is 0.4 wt% or more and 1.0 wt% or less, and gold is 0.1 wt% or more and 1.0 wt% or less.

銀とネオジムと銅を含む合金に関して、ネオジムと銅の好ましい含有率は、ネオジムが0.1wt%以上、3.0wt%以下であり、銅が0.1wt%以上、3.0wt%以下である。より好ましくは、ネオジムが0.1wt%以上、1.5wt%以下、銅が0.1wt%以上、1.5wt%以下である。さらに好ましくは、ネオジムが0.4wt%以上、1.0wt%以下、銅が0.1wt%以上、1.0wt%以下である。
Regard alloy containing silver and neodymium and copper, the preferred content of neodymium and copper, neodymium 0.1 wt% or more and less 3.0 wt%, copper 0.1 wt% or more, or less 3.0 wt% . More preferably, neodymium is 0.1 wt% or more and 1.5 wt% or less, and copper is 0.1 wt% or more and 1.5 wt% or less. More preferably, neodymium is 0.4 wt% or more and 1.0 wt% or less, and copper is 0.1 wt% or more and 1.0 wt% or less.

耐環境性に優れる理由としては、厚い層は銀凝集を起こし難く、薄い層の銀凝集は透明性、面抵抗に対する影響が少ないためと推測される。尚、上記の耐環境性は、塩化ナトリウム水溶液浸漬試験および塩化ナトリウム水溶液滴下試験によって評価することができる。上記の試験の評価が好適な理由としては、前述の銀の凝集と言う現象が塩化物イオンにより起こりやすいことがある。また、透明導電性薄膜積層体を各種用途に用いる場合、通常は大気環境と隔離された状態で使用されるが、その製造工程においては大気や人体接触する工程があるため、大気中や人の汗に含まれる塩化物イオンが付着することがあるこのようなことを想定した加速試験として上記の試験は有効である。 The reason for the excellent environmental resistance is presumed that the thick layer hardly causes silver aggregation, and the thin layer has little influence on transparency and surface resistance. The environmental resistance can be evaluated by a sodium chloride aqueous solution immersion test and a sodium chloride aqueous solution dropping test. The reason why the above test is suitable is that the phenomenon of silver aggregation described above is likely to occur due to chloride ions. In the case of using a transparent conductive thin film laminate in various applications, it is usually used in a state of being separated from the atmospheric environment, because in the manufacturing process there is a step of contact with the atmosphere and the human body, in the air and humans Chloride ions contained in sweat may adhere . The above test is effective as an accelerated test assuming such a situation.

Claims (2)

銀合金が、金、銅、パラジウム、プラチナ、ネオジム、ビスマスから選ばれる少なくとも1種の金属を含む銀合金であることを特徴とする請求項1記載の透明導電性薄膜積層体。
2. The transparent conductive thin film laminate according to claim 1, wherein the silver alloy is a silver alloy containing at least one metal selected from gold, copper, palladium, platinum, neodymium , and bismuth.
金属薄膜層(b)のネオジム含有率が0.1wt%以上、3.0wt%以下であり、金の含有率が0.1wt%以上、3.0wt%以下であることを特徴とする請求項1記載の透明導電性薄膜積層体。
The neodymium content of the metal thin film layer (b) is 0.1 wt% or more and 3.0 wt% or less, and the gold content is 0.1 wt% or more and 3.0 wt% or less. 2. The transparent conductive thin film laminate according to 1.
JP2004055546A 2004-02-27 2004-02-27 Transparent conductivity thin film laminated body and optical filter for plasma display panel using it Withdrawn JP2005242264A (en)

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JP4805648B2 (en) * 2005-10-19 2011-11-02 出光興産株式会社 Semiconductor thin film and manufacturing method thereof
JP2008221732A (en) * 2007-03-15 2008-09-25 Kiyoshi Chiba Laminate
EP2463256B1 (en) * 2009-08-05 2017-06-07 Sumitomo Metal Mining Co., Ltd. Oxide sinter, method for producing same, target and transparent conductive film
JP4968318B2 (en) 2009-12-22 2012-07-04 住友金属鉱山株式会社 Oxide deposition material
JP5381744B2 (en) 2010-01-25 2014-01-08 住友金属鉱山株式会社 Oxide evaporation material, evaporation thin film, and solar cell

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