JP2005240029A - Polyamide resin and its positive photosensitive resin composition, semiconductor device and display element using the positive photosensitive resin composition, and methods for producing semiconductor device and display element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a polyamide resin which provides a polybenzoxazole resin or a polyimide resin or their copolymer resin excellent in low stress properties; and a positive photosensitive resin composition using them and excellent in exposure characteristics, to provide a semiconductor device and a display element. <P>SOLUTION: The polyamide resin (A) has a structure represented by formula (1) [wherein Y contains either of structures represented by formulae (2)]. The photosensitive resin composition contains the polyamide resin (A). Both of the semiconductor device and the display element are prepared by using the polyamide resin (A) or the photosensitive resin composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a polyamide resin, a positive photosensitive resin composition thereof, a semiconductor device and a display element using the positive photosensitive resin composition, and a method for manufacturing the semiconductor device and the display element.

Conventionally, polybenzoxazole resins and polyimide resins having excellent heat resistance and excellent electrical characteristics, mechanical characteristics, and the like have been used for surface protection films and interlayer insulating films of semiconductor elements. On the other hand, in order to simplify the process, a positive photosensitive resin obtained by combining the polybenzoxazole resin or polyimide resin with a photosensitive diazoquinone compound is also used (for example, see Patent Document 1). In recent years, since the semiconductor element has been reduced in size, increased in multi-layer wiring by higher integration, and shifted to a chip size package (CSP) or wafer level package (WLP), the damage to the chip is reduced. Benzoxazole resins and polyimide resins are required. When these positive photosensitive resins are used in an actual process, the problem is the exposure characteristics, and among them, the exposure time is particularly important. That is, in order to improve throughput, a positive photosensitive resin that can be exposed in a short time is desired.
Japanese Examined Patent Publication No. 1-46862

  The present invention relates to a polyamide resin intended to provide a polybenzoxazole resin or polyimide resin excellent in low stress properties or a copolymer resin thereof, and a positive photosensitive resin composition excellent in exposure characteristics using them, A semiconductor device and a display element using a positive photosensitive resin composition are provided.

Such an object is achieved by the present invention described in the following [1] to [10].
[1] A polyamide resin having a structure represented by the general formula (1), wherein Y in the general formula (1) includes any one of the structures represented by the following formula (2) .

[2] The polyamide according to item [1], wherein Y in the general formula (1) contains 0.1 mol% to 70 mol% of any of the structures represented by the formula (2) with respect to the total amount of Y. resin.
[3] A positive photosensitive resin composition comprising the polyamide resin (A) described in the item [1] or [2] and a photosensitive diazoquinone compound (B).

[4] The positive photosensitive resin composition according to item [3], wherein the positive photosensitive resin composition further comprises a compound (C) having a phenolic hydroxyl group.
[5] The positive photosensitive resin composition according to item [4], wherein the compound (C) having a phenolic hydroxyl group has a structure represented by the general formula (3).

[6] A step of applying the positive photosensitive resin composition according to any one of items [3] to [5] onto a substrate to form a composition layer, and an active energy in the composition layer. A process for producing a patterned resin film, comprising the steps of forming a pattern by irradiating a line with a developer and heating the approximate composition.

[7] A semiconductor device manufactured using the polyamide resin or the positive photosensitive resin composition according to any one of [1] to [5].

[8] A display element manufactured using the polyamide resin or the positive photosensitive resin composition according to any one of items [1] to [5].

[9] On the semiconductor element so that the film thickness after heating the polyamide resin or the positive photosensitive resin composition according to any one of [1] to [5] is 0.1 to 30 μm. A method for manufacturing a semiconductor device, which is obtained by performing pattern processing in

[10] For display element so that the film thickness after heating the polyamide resin or the positive photosensitive resin composition according to any one of items [1] to [5] is 0.1 to 30 μm. A method for producing a display element, which is obtained by patterning on a substrate.

  According to the present invention, a polybenzoxazole resin excellent in low-stress property, a polyimide resin, a polyamide resin intended to provide a resin that is a copolymer thereof, and a positive photosensitive resin composition excellent in exposure characteristics using them And a semiconductor device and a display element using the same can be obtained.

The polyamide resin of the present invention is a polyamide resin having a structure represented by the general formula (1), wherein X in the general formula (1) represents a divalent to tetravalent organic group, and R ₁ represents a hydroxyl group. Or it is O-R < ₃ > and m is an integer of 0-2. Each R ₁ may be the same or different. Y in the general formula (1) represents a divalent to hexavalent organic group, R ₂ is a hydroxyl group, a carboxyl group, O—R ₃ or COO—R ₃ , and n is an integer of 0 to 4. Each R ₂ may be the same or different. Here, R ₃ is an organic group having 1 to 15 carbon atoms. However, when R ₁ has no hydroxyl group, at least one R ₂ must be a carboxyl group. When R ₂ has no carboxyl group, at least one R ₁ must be a hydroxyl group.

  The polyamide resin containing the structure represented by the general formula (1) is, for example, a tetracarboxylic acid having a Y structure and a compound selected from diamine or bis (aminophenol) having a structure of X, 2,4-diaminophenol, etc. It is obtained by reacting with a compound selected from acid anhydride, trimellitic acid anhydride, dicarboxylic acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative and the like. In the case of dicarboxylic acid, an active ester type dicarboxylic acid derivative obtained by reacting 1-hydroxy-1,2,3-benzotriazole or the like in advance may be used in order to increase the reaction yield or the like.

In the polyamide resin containing the structure represented by the general formula _{(1), O-R 3} , COO-R 3 as a substituent of O-R _3, Y as a substituent of X is a hydroxyl group, an alkaline aqueous solution of the carboxyl group Is a group protected by R ₃ which is an organic group having 1 to 15 carbon atoms, and if necessary, a hydroxyl group or a carboxyl group may be protected. Examples of R ₃ include formyl group, methyl group, ethyl group, propyl group, isopropyl group, tertiary butyl group, tertiary butoxycarbonyl group, phenyl group, benzyl group, tetrahydrofuranyl group, tetrahydropyranyl group and the like. It is done.

  When this polyamide resin is heated at about 250 to 400 ° C., it is dehydrated and closed, and a heat-resistant resin is obtained in the form of polyimide resin, polybenzoxazole resin, or copolymerization of both.

等であるが、これらに限定されるものではない。 As X in the general formula (1), for example,

However, it is not limited to these.

より選ばれるものであり、又２種類以上用いても良い。 Among these, particularly preferred are:

Two or more types may be used.

Further, Y that can be used other than the group represented by the general formula (2) of the polyamide resin containing the structure represented by the general formula (1) is, for example,

However, it is not limited to these. Among these, more preferable are:

より選ばれるものであり、また2種類以上用いても良い。

Two or more types may be used.

  In the present invention, it is desirable to seal the end from the viewpoint of storage stability. For sealing, a derivative having an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group can be introduced as an acid derivative or an amine derivative at the end of the polyamide represented by the general formula (1). Specifically, for example, a compound selected from diamine or bis (aminophenol) having a structure of X, 2,4-diaminophenol, and the like, and a tetracarboxylic acid anhydride, trimellitic acid anhydride, dicarboxylic acid having a structure of Y After synthesizing a polyamide resin having a structure represented by the general formula (1) obtained by reacting with a compound selected from acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative, etc. It is preferable to cap the terminal amino group contained in the polyamide resin as an amide using an acid anhydride or acid derivative containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group. Examples of the group derived from an acid anhydride or acid derivative containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group after reacting with an amino group include:

等が挙げられるが、これらに限定されるものではない。

However, it is not limited to these.

Among these, particularly preferred are:

Two or more types may be used. The method is not limited to this method, and the terminal acid contained in the polyamide resin is capped as an amide using an amine derivative containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group. You can also

The present invention is a positive photosensitive resin composition comprising a polyamide resin (A) containing a structure represented by formula (2) wherein Y in the general formula (1) and a photosensitive diazoquinone compound (B). It is a feature. Furthermore, it is preferable that 0.1 mol% or more and 70 mol% or less of the total amount of Y in the general formula (1) is a structure represented by the formula (2).

  The photosensitive diazoquinone compound (B) used in the present invention is a compound having a 1,2-benzoquinonediazide or 1,2-naphthoquinonediazide structure, and is known from US Pat. Nos. 2,729,975, 2,797,213 and 3,669,658. It is a substance. For example, the following are mentioned.

  Among these, an ester of a phenol compound and 1,2-naphthoquinone-2-diazide-5-sulfonic acid or 1,2-naphthoquinone-2-diazide-4-sulfonic acid is particularly preferable. Examples of these include, but are not limited to, the following. Two or more of these may be used.

  The addition amount of the photosensitive diazoquinone compound (B) used by this invention is 1-50 weight part with respect to 100 weight part of polyamide resins. If the amount is less than 1 part by weight, a good pattern cannot be obtained, and if it exceeds 50 parts by weight, the sensitivity is greatly reduced.

Further, in the present invention, it is preferable to use a compound (C) having a phenolic hydroxyl group in combination so that high sensitivity and patterning can be performed with high resolution without developing residue (scum) during development. As for the compounding quantity of the compound which has a phenolic hydroxyl group, 1-30 weight part is preferable with respect to 100 weight part of polyamide resins. The compound having a phenolic hydroxyl group is represented by the general formula (3). Specific examples of the general formula (3) include the following, but are not limited thereto.

Of these, preferably

It is chosen from.

The polyamide resin of the present invention is dissolved in a solvent and used in the form of a varnish. Solvents include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol Monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropio And the like, and may be used alone or in combination.
If necessary, additives such as a leveling agent, a silane coupling agent, a titanate coupling agent, and their respective reactants can be added to the positive photosensitive resin composition in the present invention.

  In the method of using the positive photosensitive resin composition of the present invention, first, the composition is applied to a suitable support such as a silicon wafer, a ceramic substrate, an aluminum substrate and the like. In the case of a semiconductor device, the coating amount is applied so that the final film thickness after curing is 0.1 to 50 μm. If the film thickness is below the lower limit value, it will be difficult to fully function as a surface protection film of the semiconductor element. If the film thickness exceeds the upper limit value, it will be difficult to obtain a fine processing pattern as well as processing. Takes a long time to reduce throughput. Examples of the coating method include spin coating using a spinner, spray coating using a spray coater, dipping, printing, roll coating, and the like. Next, after prebaking at 60 to 130 ° C. to dry the coating film, actinic radiation is applied to the desired pattern shape. As the actinic radiation, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable.

  Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developer. Developers include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, and di-n. Secondary amines such as propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, quaternary ammonium such as tetramethylammonium hydroxide and tetraethylammonium hydroxide An aqueous solution of an alkali such as a salt and an aqueous solution to which an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant is added can be preferably used. As a developing method, methods such as spraying, paddle, dipping, and ultrasonic waves are possible.

  Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinse liquid. Next, heat treatment is performed to form an oxazole ring and / or an imide ring, thereby obtaining a final pattern rich in heat resistance.

  The photosensitive resin composition according to the present invention is useful not only for semiconductor applications, but also for interlayer insulation of multilayer circuits, flexible copper-clad cover coats, solder resist films, liquid crystal alignment films, and display devices.

Examples of specific uses for semiconductors include a passivation film obtained by forming the above-described photosensitive resin composition film on a semiconductor element, and a photosensitive resin composition described above on a passivation film formed on a semiconductor element. Examples thereof include a buffer coat film formed by forming a physical film, and an interlayer insulating film formed by forming the above-described photosensitive resin composition film on a circuit formed on a semiconductor element.

  Among them, as one application example in which the photosensitive resin composition of the present invention is used in a semiconductor device, application to a semiconductor device having bumps will be described with reference to the drawings. FIG. 1 is an enlarged cross-sectional view of a pad portion of a semiconductor device having a bump according to the present invention. As shown in FIG. 1, a passivation film 3 is formed on an input / output Al pad 2 in a silicon wafer 1, and a via hole is formed in the passivation film 3. Further, a positive photosensitive resin (buffer coating film) 4 is formed thereon, and a metal (Cr, Ti, etc.) film 5 is formed so as to be connected to the Al pad 2, and the metal film 5 is formed of solder bumps. 9 is etched to insulate between the pads. Barrier metal 8 and solder bumps 9 are formed on the insulated pads.

  Examples of display device applications include TFT interlayer insulating films, TFT element flattening films, color filter flattening films, protrusions for MVA liquid crystal display devices, and cathode partitions for organic EL elements. The usage method is based on forming the photosensitive resin composition layer patterned on the board | substrate which formed the display body element and the color filter by said method according to a semiconductor use. High transparency is required for display device applications, especially interlayer insulation films and planarization films, but by introducing a post-exposure process before curing the photosensitive resin composition layer, it is excellent in transparency. A resin layer can be obtained, which is more preferable in practical use.

Example 1
[Synthesis of polyamide resin]
Diphenyl ether-4,4′-dicarboxylic acid 3.31 g (0.0128 mol), diphenyl ether-3,4′-dicarboxylic acid (D-1) 0.83 g (0.0032 mol) and 1-hydroxy- A mixture (0.016 mol) of a dicarboxylic acid derivative obtained by reacting 4.32 g (0.032 mol) of 1,2,3-benzotriazole with hexafluoro-2,2-bis (3-amino-) 4-hydroxyphenyl) propane (7.33 g, 0.020 mol) was placed in a four-necked separable flask equipped with a thermometer, stirrer, raw material inlet, and dry nitrogen gas inlet tube, and N-methyl-2- 57.0 g of pyrrolidone was added and dissolved. Thereafter, the mixture was reacted at 75 ° C. for 12 hours using an oil bath. Next, 1.31 g (0.008 mol) of 5-norbornene-2,3-dicarboxylic anhydride dissolved in 7 g of N-methyl-2-pyrrolidone was added, and the mixture was further stirred for 12 hours to complete the reaction. After filtering the reaction mixture, the reaction mixture was poured into a solution of water / methanol = 3/1 (volume ratio), the precipitate was collected by filtration, washed thoroughly with water, dried under vacuum, and the desired polyamide resin ( A-1) was obtained.

[Preparation of resin composition]
After dissolving in 10 g of the synthesized polyamide resin (A-1), 2 g of photosensitive diazoquinone (B-1) having the following structure and 70 g of γ-butyrolactone, it is filtered through a 0.2 μm fluororesin filter, and positive photosensitive A resin composition was obtained.

[Developability evaluation]
This positive photosensitive resin composition was applied on a silicon wafer using a spin coater and then dried on a hot plate at 120 ° C. for 4 minutes to obtain a coating film having a thickness of about 10 μm. Through this coating film, a mask made by Toppan Printing Co., Ltd. (test chart No. 1: remaining pattern and blank pattern with a width of 0.88 to 50 μm are drawn), Nikon Corporation i-line stepper NSR-4425i The exposure amount was increased by 200 mJ / cm ² to 10 mJ / cm ² steps. Next, the exposed portion was dissolved and removed by immersing in a 2.38% tetramethylammonium hydroxide aqueous solution for 80 seconds, and then rinsed with pure water for 30 seconds. As a result of observing the pattern, it was confirmed that the exposure was 480 mJ / cm ² , and a 7 μm pattern was well opened.
[Evaluation of the physical properties]
This positive photosensitive resin composition is coated on a 6-inch silicon wafer using a spin coater so as to have a thickness of 5 μm after curing, and then dried on a hot plate at 120 ° C. for 4 minutes, and then using a clean oven. Curing was performed at an oxygen concentration of 1000 ppm or less at 150 ° C./30 minutes + 320 ° C./30 minutes. Next, using a surface roughness meter, the warpage when the back surface of the wafer was scanned 100 mm was measured, and the amount of warpage was 35 μm.

Example 2
[Synthesis of polyamide resin]
In the synthesis of the polyamide resin of Example 1, 3.31 g (0.0128 mol) of diphenyl ether-4,4′-dicarboxylic acid, 0.83 g of diphenyl ether-3,4′-dicarboxylic acid (D-1) having the following structure ( 0.0032 mol) is 1.48 g (0.0096 mol) of 1 mol of diphenyl ether-4,4′-dicarboxylic acid, 1.65 g of diphenyl ether-3,4′-dicarboxylic acid (D-1) having the following structure ( A polyamide resin was synthesized (A-2) in the same manner as in Example 1 except that the amount was changed to 0.0064 mol).

[Production of resin composition, developability and evaluation of physical properties]
Using the obtained polyamide resin (A-2), a positive photosensitive resin composition was prepared and evaluated in the same manner as in Example 1. As a result, the warpage was 32 μm. Further, with regard to developability, it was confirmed that a pattern having an exposure amount of 500 mJ / cm ² and a pattern of 7 μm was satisfactorily opened with a development time of 80 seconds.

Example 3
[Synthesis of polyamide resin]
In the synthesis of the polyamide resin in Example 1, 0.83 g (0.0032 mol) of diphenyl ether-3,4′-dicarboxylic acid (D-1) having the following structure was converted to diphenyl ether-3,3′-dicarboxylic acid having the following structure. (D-2) A polyamide resin (A-3) was synthesized in the same manner as in Example 1 except that the amount was changed to 0.83 g (0.0032 mol).

[Production of resin composition, developability and evaluation of physical properties]
After dissolving in 10 g of the synthesized polyamide resin (A-3), 1.5 g of photosensitive diazoquinone (B-2) having the following structure, and 70 g of γ-butyrolactone, it was filtered through a 0.2 μm fluororesin filter, and positive type A photosensitive resin composition was obtained.

When the obtained positive photosensitive resin composition was evaluated in the same manner as in Example 1, the warp was 37 μm. Moreover, also about developability, it has confirmed that it was opening satisfactorily to the pattern of exposure amount 520mJ / cm < ² > and 8 micrometers in 80 second of development time.

Example 4
[Production of resin composition, developability and evaluation of physical properties]
10 g of the polyamide resin (A-1) obtained in Example 1, 2 g of photosensitive diazoquinone (B-1) having the following structure, and 1.5 g of the compound having a phenolic hydroxyl group (C-1) were converted to 70 g of γ-butyrolactone. After dissolution, the mixture was filtered through a 0.2 μm fluororesin filter to obtain a positive photosensitive resin composition. Next, when the evaluation was performed in the same manner as in Example 1, it was confirmed that the warp was 36 μm, the exposure amount was 420 mJ / cm ² , the development time was 50 seconds, and the pattern of 3 μm was well opened.

Example 5
[Production of resin composition, developability and evaluation of physical properties]
10 g of the polyamide resin (A-2) obtained in Example 2, 2 g of photosensitive diazoquinone (B-1) having the following structure, and 0.5 g of a compound having a phenolic hydroxyl group (C-2) were converted to 70 g of γ-butyrolactone. After dissolution, the mixture was filtered through a 0.2 μm fluororesin filter to obtain a positive photosensitive resin composition. Next, evaluation was performed in the same manner as in Example 1. As a result, it was confirmed that the warp was 34 μm, the exposure amount was 390 mJ / cm ² , the development time was 45 seconds, and a pattern of 4 μm was well opened.

Example 6
[Production of resin composition, developability and evaluation of physical properties]
10 g of the polyamide resin (A-3) obtained in Example 3, 1.5 g of photosensitive diazoquinone (B-2) having the following structure, and 1.0 g of a compound (C-3) having a phenolic hydroxyl group were added to γ-butyrolactone. After dissolving in 70 g, the mixture was filtered through a 0.2 μm fluororesin filter to obtain a positive photosensitive resin composition. Next, when the evaluation was performed in the same manner as in Example 1, it was confirmed that the warp was 38 μm, the exposure amount was 420 mJ / cm ² , the development time was 45 seconds, and a 3 μm pattern was satisfactorily opened.

<< Comparative Example 1 >>
[Synthesis of polyamide resin]
Dicarboxylic acid obtained by reacting 4.10 g (0.016 mol) of diphenylmethane-4,4′-dicarboxylic acid with 4.32 g (0.032 mol) of 1-hydroxy-1,2,3-benzotriazole A mixture of derivatives (0.016 mol) and 7.33 g (0.020 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane were thermometer, stirrer, raw material inlet, and dried. Into a four-necked separable flask equipped with a nitrogen gas inlet tube, 57.0 g of N-methyl-2-pyrrolidone was added and dissolved. Thereafter, the mixture was reacted at 75 ° C. for 12 hours using an oil bath. Next, 1.31 g (0.008 mol) of 5-norbornene-2,3-dicarboxylic anhydride dissolved in 7 g of N-methyl-2-pyrrolidone was added, and the mixture was further stirred for 12 hours to complete the reaction. After filtering the reaction mixture, the reaction mixture was poured into a solution of water / methanol = 3/1 (volume ratio), the precipitate was collected by filtration, washed thoroughly with water, dried under vacuum, and the desired polyamide resin ( A-4) was obtained.

[Preparation of resin composition]
10 g of the synthesized polyamide resin (A-4) and 2 g of photosensitive diazoquinone (B-1) having the following structure were dissolved in 50 g of N-methyl-2-pyrrolidone, and then filtered through a 0.2 μm fluororesin filter. Type photosensitive resin composition was obtained.

[Developability and evaluation of physical properties]
Next, evaluation was performed in the same manner as in Example 1. As a result, it was confirmed that the warp was 45 μm, the exposure amount was 600 mJ / cm ² , the development time was 80 seconds, and a 7 μm pattern was well opened.

<< Comparative Example 2 >>
[Production of resin composition, developability and evaluation of physical properties]
10 g of the polyamide resin (A-4) synthesized in Comparative Example 1, 2 g of photosensitive diazoquinone (B-1) having the following structure, and 0.5 g of a compound having a phenolic hydroxyl group (C-2) were added to N-methyl-2-pyrrolidone. After dissolving in 70 g, the mixture was filtered through a 0.2 μm fluororesin filter to obtain a positive photosensitive resin composition. Next, evaluation was performed in the same manner as in Example 1. As a result, it was confirmed that the warp was 47 μm, the exposure amount was 520 mJ / cm ² , the development time was 50 seconds, and a pattern of 4 μm was well opened.

  The present invention is a polyamide resin intended to provide a polybenzoxazole resin or polyimide resin or a copolymer resin thereof excellent in low-stress property, and a positive photosensitive resin composition excellent in exposure characteristics using them. Thus, it is preferably used for a surface protective film of a semiconductor element, an interlayer insulating film, a surface protective film of a display element, an interlayer insulating film, and the like.

The expanded sectional view of the pad part of an example of the semiconductor device which has a bump of the present invention is shown.

Explanation of symbols

1 Silicon wafer 2 Al pad 3 Passivation film 4 Buffer coat film 5 Metal (Cr, Ti, etc.) film 6 Wiring (Al, Cu, etc.)
7 Insulating film 8 Barrier metal 9 Solder bump

Claims (10)

A polyamide resin having a structure represented by the general formula (1), wherein Y in the general formula (1) includes any one of the structures represented by the following formula (2).

The polyamide resin according to claim 1, wherein Y in the general formula (1) contains 0.1 to 70 mol% of any of the structures represented by the formula (2) with respect to the total amount of Y. A positive photosensitive resin composition comprising the polyamide resin (A) according to claim 1 or 2 and a photosensitive diazoquinone compound (B). The positive photosensitive resin composition according to claim 3, wherein the positive photosensitive resin composition further comprises a compound (C) having a phenolic hydroxyl group. The positive photosensitive resin composition according to claim 4, wherein the compound (C) having a phenolic hydroxyl group has a structure represented by the general formula (3).

A step of coating the positive photosensitive resin composition according to any one of claims 3 to 5 on a substrate to form a composition layer, and irradiating active energy rays to the approximate composition layer to develop a developer A method for producing a patterned resin film, comprising: a step of forming a pattern by contacting with a substrate; and a step of heating the approximate composition. A semiconductor device manufactured using the polyamide resin or positive photosensitive resin composition according to claim 1. A display element produced by using the polyamide resin or the positive photosensitive resin composition according to any one of claims 1 to 5. It is obtained by patterning on a semiconductor element so that the film thickness after heating the polyamide resin or the positive photosensitive resin composition according to any one of claims 1 to 5 is 0.1 to 30 µm. A method for manufacturing a semiconductor device. The polyamide resin or the positive photosensitive resin composition according to any one of claims 1 to 5 is patterned on a display element substrate so that a film thickness after heating is 0.1 to 30 µm. A method for producing a display element obtained by the method.

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