JP2005235897A - Apparatus and method for substrate cleaning - Google Patents

Apparatus and method for substrate cleaning Download PDF

Info

Publication number
JP2005235897A
JP2005235897A JP2004041100A JP2004041100A JP2005235897A JP 2005235897 A JP2005235897 A JP 2005235897A JP 2004041100 A JP2004041100 A JP 2004041100A JP 2004041100 A JP2004041100 A JP 2004041100A JP 2005235897 A JP2005235897 A JP 2005235897A
Authority
JP
Japan
Prior art keywords
cleaning
nozzle
ultrasonic
substrate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004041100A
Other languages
Japanese (ja)
Inventor
Mitsuhide Abe
充秀 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2004041100A priority Critical patent/JP2005235897A/en
Publication of JP2005235897A publication Critical patent/JP2005235897A/en
Pending legal-status Critical Current

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To solve such a problem that cleaning performance cannot be ensured without causing any damage to a refined pattern. <P>SOLUTION: The substrate cleaning apparatus and the substrate cleaning method are provided with a means to oscillate an ultrasonic wave in the direction perpendicular to the flow of liquid, and a means to generate air bubbles in a cleaning liquid without transmitting the ultrasonic wave to the surface of the semiconductor substrate. Thus, the following problems can be solved: (1) the ultrasonic wave is transmitted by means of DIW (ultra pure water) or a cleaning liquid flowing on the semiconductor substrate, and the cavitation of ultrasonic wave is generated on the semiconductor substrate; (2) this action causes cracking or peeling of a refined pattern in the substrate and a pattern damage is generated; (3) when the output of ultrasonic wave is lowered to reduce an impulsive force due to cavitation, the capacity for removing particles is reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、主に半導体装置製造における洗浄、特にドライエッチング工程で発生する反応生成物をパターンダメージレスにて除去する事ができる基板洗浄装置及び基板洗浄方法に関するものである。   The present invention relates to a substrate cleaning apparatus and a substrate cleaning method that can remove reaction products generated in a semiconductor device manufacturing process, particularly a dry etching process, without pattern damage.

半導体装置の製造工程において、半導体基板の表面上に種々の反応生成物、パーティクル、汚染物が付着することが知られている。例えば、半導体基板の上にCVD(化学気相成長:Chemical Vapor Deposition)法またはスパッタ法により絶縁膜や金属膜を形成すると、形成した膜の表面にはパーティクル状の汚染物が付着する。また、ドライエッチングによるパターン形成後にはエッチング残渣(レジスト残渣)、反応生成物、パーティクル等が付着する。これらの反応生成物、パーティクル、汚染物を除去する方法として、高速回転している半導体基板面に超音波を付与した超純水を半導体基板面に供給することにより、パーティクル除去をおこなう基板洗浄装置及び基板洗浄方法がある。   In the manufacturing process of a semiconductor device, it is known that various reaction products, particles, and contaminants adhere to the surface of a semiconductor substrate. For example, when an insulating film or a metal film is formed on a semiconductor substrate by a CVD (Chemical Vapor Deposition) method or a sputtering method, particulate contaminants adhere to the surface of the formed film. Further, after forming a pattern by dry etching, etching residues (resist residues), reaction products, particles, and the like adhere. As a method for removing these reaction products, particles, and contaminants, a substrate cleaning apparatus that removes particles by supplying ultrapure water with ultrasonic waves applied to the semiconductor substrate surface rotating at high speed to the semiconductor substrate surface. And a substrate cleaning method.

以下、図面を参照しながら、従来の基板洗浄装置及び基板洗浄方法の一例について説明する。   Hereinafter, an example of a conventional substrate cleaning apparatus and substrate cleaning method will be described with reference to the drawings.

図3は従来の基板洗浄装置の要部を示す図である。   FIG. 3 is a view showing a main part of a conventional substrate cleaning apparatus.

19は洗浄に使用する洗浄液、20は超音波振動子、21は洗浄液吐出口、22は半導体基板、23は半導体基板を回転させるチャックベース、24は洗浄液をリンスする為のサイドノズル、 25は洗浄液吐出ノズル、26は液の飛び散りを防ぐ表面カップ、27は超音波素子20を組み込んだ超音波移動ノズルである。   19 is a cleaning liquid used for cleaning, 20 is an ultrasonic vibrator, 21 is a cleaning liquid discharge port, 22 is a semiconductor substrate, 23 is a chuck base for rotating the semiconductor substrate, 24 is a side nozzle for rinsing the cleaning liquid, and 25 is a cleaning liquid. The discharge nozzle 26 is a surface cup that prevents the liquid from splashing, and 27 is an ultrasonic moving nozzle incorporating the ultrasonic element 20.

半導体基板22をチャックベース23により保持し、毎分2000回転から3000回転までの間で回転させる。次に半導体基板22の表面へ表面カップ26に装着したサイドノズル24よりDIW(超純水)を吐出し、半導体基板22の全面が濡れるようにリンスする。次に、サイドノズル24からのリンス水吐出を止め、洗浄液吐出ノズル25から洗浄液を吐出する。次に超音波移動ノズル27より洗浄水を吐出しながら、半導体基板22のエッジからセンターに向け超音波移動ノズル27をスキャンする。超音波振動子20は洗浄液吐出口21の上部に位置し、超音波振動子20で発生した超音波振動が洗浄液吐出口21から半導体基板22方向へ伝達するよう設定している。この時の超音波周波数は1.5MHz、出力は10Wから15Wの間に設定している。前記超音波は素子の振動方向と同方向に伝播する為、洗浄液19を介して直接半導体基板22へ超音波が伝播する。この時、半導体基板22表面において、超音波振動伝播による洗浄液中でのキャビテーションにより局所的な圧力変動が起こる。   The semiconductor substrate 22 is held by the chuck base 23 and rotated between 2000 and 3000 rotations per minute. Next, DIW (ultra pure water) is discharged from the side nozzle 24 attached to the surface cup 26 onto the surface of the semiconductor substrate 22 to rinse the entire surface of the semiconductor substrate 22. Next, the rinse water discharge from the side nozzle 24 is stopped, and the cleaning liquid is discharged from the cleaning liquid discharge nozzle 25. Next, the ultrasonic moving nozzle 27 is scanned from the edge of the semiconductor substrate 22 toward the center while discharging cleaning water from the ultrasonic moving nozzle 27. The ultrasonic vibrator 20 is positioned above the cleaning liquid discharge port 21 and is set so that ultrasonic vibration generated by the ultrasonic vibrator 20 is transmitted from the cleaning liquid discharge port 21 toward the semiconductor substrate 22. The ultrasonic frequency at this time is set to 1.5 MHz, and the output is set between 10 W and 15 W. Since the ultrasonic wave propagates in the same direction as the vibration direction of the element, the ultrasonic wave propagates directly to the semiconductor substrate 22 through the cleaning liquid 19. At this time, local pressure fluctuations occur on the surface of the semiconductor substrate 22 due to cavitation in the cleaning liquid due to ultrasonic vibration propagation.

その後、サイドノズル24から洗浄水を吐出し半導体基板22をリンスした後、高速回転にすることにより半導体基板22を乾燥させる。
特開平10−309548号公報
Thereafter, cleaning water is discharged from the side nozzle 24 to rinse the semiconductor substrate 22, and then the semiconductor substrate 22 is dried by high speed rotation.
JP-A-10-309548

しかしながら上記のような構成では 半導体基板に流れる洗浄液を介して超音波が伝播し、超音波によるキャビテーションが半導体基板上で発生する。この作用により微細パターンでは亀裂や基板からの剥離が発生しパターンダメージが発生する。また、キャビテーションによる衝撃力を弱める為に超音波の出力を低くするとパーティクル除去性能が低下する。つまり、微細パターンのパターンダメージを発生することなく、洗浄性能を確保する事ができないという問題点を有している。   However, in the configuration as described above, ultrasonic waves propagate through the cleaning liquid flowing in the semiconductor substrate, and cavitation due to the ultrasonic waves occurs on the semiconductor substrate. Due to this action, cracks and peeling from the substrate occur in the fine pattern, resulting in pattern damage. Further, if the output of the ultrasonic wave is lowered in order to weaken the impact force due to cavitation, the particle removal performance is lowered. That is, there is a problem that the cleaning performance cannot be secured without causing pattern damage of the fine pattern.

上記問題点を解決するために本発明の基板洗浄装置及び基板洗浄方法は、超音波を液体の流れと垂直方向に発振させる手段を有し、半導体基板表面に超音波を伝播することなく洗浄液中に気泡を発生させる手段を有する構成を備えたものである。   In order to solve the above problems, the substrate cleaning apparatus and the substrate cleaning method of the present invention have means for oscillating ultrasonic waves in a direction perpendicular to the flow of the liquid, and in the cleaning liquid without propagating the ultrasonic waves to the semiconductor substrate surface. It has a configuration having means for generating bubbles.

本発明は、半導体基板上でのキャビテーションが起こらないことによりパターンダメージがない。また、超音波移動ノズルの超音波振動部分においてキャビテーションによる気泡発生及び崩壊による洗浄液の高速流により、従来の超音波洗浄では難しい半導体基板上のパーティクル除去とパターンダメージレスを維持した状態で洗浄することが可能であるので、半導体基板表面に超音波を伝播することなく、半導体装置の微細パターンに超音波
によるダメージを発生することなく、高いパーティクル除去性能を持つことにより、半導体製造における歩留まり向上、品質向上を実現することができる。
In the present invention, there is no pattern damage because cavitation does not occur on the semiconductor substrate. Also, cleaning is performed while maintaining particle removal and pattern damage-less, which is difficult with conventional ultrasonic cleaning, due to high-speed flow of cleaning liquid due to bubble generation and collapse due to cavitation in the ultrasonic vibration part of the ultrasonic moving nozzle. It is possible to improve the yield and quality in semiconductor manufacturing by having high particle removal performance without propagating ultrasonic waves to the surface of the semiconductor substrate and without causing ultrasonic damage to the fine pattern of the semiconductor device. Improvements can be realized.

以下に本発明の実施形態の一例について、図面を参照しながら説明する。   Hereinafter, an exemplary embodiment of the present invention will be described with reference to the drawings.

(実施形態1)
図1は、本発明の基板洗浄装置に使用する超音波移動ノズルを示す概略図である。
(Embodiment 1)
FIG. 1 is a schematic view showing an ultrasonic moving nozzle used in the substrate cleaning apparatus of the present invention.

1aは洗浄液、1bは洗浄液がノズル内を流れ超音波振動子によりキャビテーションを起こした洗浄液、2は洗浄液の流量調整機構付き調圧バルブ、3は薬液流量計、4は洗浄ノズル本体、5は洗浄液にキャビテーションを起こす為の超音波振動子、6は半導体基板である。   1a is a cleaning liquid, 1b is a cleaning liquid flowing through the nozzle and cavitation is caused by an ultrasonic vibrator, 2 is a pressure adjusting valve with a flow rate adjusting mechanism of the cleaning liquid, 3 is a chemical flow meter, 4 is a main body of the cleaning nozzle, and 5 is a cleaning liquid An ultrasonic vibrator 6 for causing cavitation is shown, and 6 is a semiconductor substrate.

以上のように構成された薬液洗浄装置について、以下図1を用いてその動作を説明する。   About the chemical | medical solution washing | cleaning apparatus comprised as mentioned above, the operation | movement is demonstrated using FIG. 1 below.

まず、洗浄液1aはポンプ等により洗浄ノズル本体4に供給される。洗浄液1aの流量は薬液流量計3の値を流量調圧バルブ2にフィードバックする事によりコントロールしながら吐出させることが出来る。洗浄ノズル先端には超音波振動子5が埋め込まれており、超音波振動子5の振動により洗浄液1bに超音波振動を与えることによりキャビテーションが起こる。この現象は洗浄液1b中に含まれる溶存ガス及び超音波振動周波数に依存する。キャビテーションが発生した洗浄液1b中における気泡の崩壊時に起こる高速流により半導体基板6の表面のパーティクル及び残渣を除去する。   First, the cleaning liquid 1a is supplied to the cleaning nozzle body 4 by a pump or the like. The flow rate of the cleaning liquid 1 a can be discharged while being controlled by feeding back the value of the chemical flow meter 3 to the flow pressure regulating valve 2. An ultrasonic vibrator 5 is embedded at the tip of the cleaning nozzle, and cavitation occurs when the ultrasonic vibration is applied to the cleaning liquid 1b by the vibration of the ultrasonic vibrator 5. This phenomenon depends on the dissolved gas contained in the cleaning liquid 1b and the ultrasonic vibration frequency. Particles and residues on the surface of the semiconductor substrate 6 are removed by a high-speed flow that occurs when bubbles collapse in the cleaning liquid 1b in which cavitation has occurred.

本実施の形態の超音波印加方法は超音波振動子が洗浄液の流れに対して90度(垂直)方向に設置している為、超音波振動が水平方向に伝播する。これにより従来超音波洗浄後に見られた超音波振動が半導体基板上に伝播することによるパターンダメージが起こらない。   In the ultrasonic wave application method according to the present embodiment, since the ultrasonic vibrator is installed in the 90 degree (vertical) direction with respect to the flow of the cleaning liquid, the ultrasonic vibration propagates in the horizontal direction. As a result, pattern damage due to propagation of ultrasonic vibrations conventionally observed after ultrasonic cleaning on the semiconductor substrate does not occur.

本実施の形態では超音波洗浄ノズルの超音波出力を30Wから100Wまで変化させる事により洗浄ノズル内で発生する気泡発生状態を変化させる事ができる。   In the present embodiment, it is possible to change the bubble generation state generated in the cleaning nozzle by changing the ultrasonic output of the ultrasonic cleaning nozzle from 30 W to 100 W.

また、本実施の形態の超音波洗浄ノズルでは超音波周波数は、キャビテーションが比較的起り易い100キロヘルツ以下の低周波を使用する。   In the ultrasonic cleaning nozzle of the present embodiment, the ultrasonic frequency is a low frequency of 100 kilohertz or less where cavitation is relatively likely to occur.

使用した洗浄液はDIW(超純水)の他に、オゾン水、水素水、CO2水(炭酸水)等の機能水及び洗浄薬液(APM:アンモニア過水)を被洗浄基板や被除去異物の用途に応じて使用している。機能水とは、超純水にオゾン、水素、塩素等のガスを溶解して酸化性/還元性を持たせ、或いはこのガス溶解水に微量の酸・アルカリを添加してpH調整した洗浄能力の高い水である。 The cleaning liquid used is DIW (ultra pure water), functional water such as ozone water, hydrogen water, CO 2 water (carbonated water) and cleaning chemical liquid (APM: ammonia water). It is used according to the purpose. Functional water is a cleaning ability that adjusts pH by dissolving gases such as ozone, hydrogen, and chlorine in ultrapure water to make it oxidizing / reducing, or adding a small amount of acid / alkali to this gas-dissolved water. High water.

尚、本実施の形態では超音波振動子の超音波印加方向を洗浄液の流れ方向に対し、超音波振動が水平方向に伝播するよう設置しているが、超音波伝播が直接ウエハ上に到達しないような範囲、(例えば洗浄液の流れ方向に対して45度)に設置しても本発明の効果を達成することができる。また、超音波伝播方向が可変であってもよい。   In this embodiment, the ultrasonic wave application direction of the ultrasonic vibrator is set so that the ultrasonic vibration propagates in the horizontal direction with respect to the flow direction of the cleaning liquid, but the ultrasonic wave propagation does not reach the wafer directly. Even if it is installed in such a range (for example, 45 degrees with respect to the flow direction of the cleaning liquid), the effect of the present invention can be achieved. Moreover, the ultrasonic wave propagation direction may be variable.

(実施形態2)
以下、本発明の基板洗浄装置及び基板洗浄方法の第二の実施の形態について説明する。
(Embodiment 2)
Hereinafter, a second embodiment of the substrate cleaning apparatus and the substrate cleaning method of the present invention will be described.

図2は、本発明の基板洗浄方法の要部を示す図である。   FIG. 2 is a diagram showing a main part of the substrate cleaning method of the present invention.

11は洗浄液吐出用ノズル、12は超音波移動ノズルで第一の実施の形態で説明したように超音波振動子が液流に対し垂直方向に取り付けられ、ウエハに超音波を伝播することなく洗浄液にキャビテーションを発生させる。13は洗浄液をリンスするサイドノズル、14は半導体基板、15は半導体基板を回転させる為のチャックベース、16は本発明の超音波移動ノズルによりキャビテーションを起こした洗浄液、17は液の飛び散りを防ぐ表面カップである。   Reference numeral 11 denotes a cleaning liquid discharge nozzle, and reference numeral 12 denotes an ultrasonic moving nozzle. As described in the first embodiment, the ultrasonic vibrator is attached in a direction perpendicular to the liquid flow, and the cleaning liquid is not propagated to the wafer. Cause cavitation. 13 is a side nozzle for rinsing the cleaning liquid, 14 is a semiconductor substrate, 15 is a chuck base for rotating the semiconductor substrate, 16 is a cleaning liquid cavitation caused by the ultrasonic moving nozzle of the present invention, and 17 is a surface for preventing the liquid from scattering. It is a cup.

以上のように構成された薬液洗浄装置について、以下図2を用いてその動作を説明する。   About the chemical | medical solution washing | cleaning apparatus comprised as mentioned above, the operation | movement is demonstrated below using FIG.

半導体基板14をチャックベース15により高速(2000〜3000rpm)に回転させる。しかる後に半導体基板14を表面カップ回りに装着したサイドノズル13より半導体基板14全面が濡れるようにリンスする。サイドノズル13より吐出したリンスにより半導体基板14全面が濡れた後、サイドノズル13によるリンスを止める。サイドノズル13からのリンス水を止め、洗浄液吐出ノズル11から洗浄液を吐出する。しかる後、本発明の超音波移動ノズル12より洗浄水16を半導体基板14エッジからセンターに向けノズルをスキャンする。超音波移動ノズル12内のキャビテーションによって起こる高速流による半導体基板14へのパターンダメージを考慮してノズル高さを10mmにてスイングする。超音波移動ノズル12を使用時は、洗浄液ノズル周辺より発生する気泡崩壊による高速流とチャックベース15の回転により半導体基板14に生ずる放射流によりパーティクルを除去する。その後、サイドノズル13によるリンス後、高速回転にすることにより半導体基板14を乾燥させる。   The semiconductor substrate 14 is rotated at a high speed (2000 to 3000 rpm) by the chuck base 15. Thereafter, rinsing is performed so that the entire surface of the semiconductor substrate 14 is wet from the side nozzle 13 on which the semiconductor substrate 14 is mounted around the surface cup. After the entire surface of the semiconductor substrate 14 is wetted by the rinsing discharged from the side nozzle 13, the rinsing by the side nozzle 13 is stopped. The rinse water from the side nozzle 13 is stopped, and the cleaning liquid is discharged from the cleaning liquid discharge nozzle 11. Thereafter, the cleaning water 16 is scanned from the edge of the semiconductor substrate 14 toward the center from the ultrasonic moving nozzle 12 of the present invention, and the nozzle is scanned. The nozzle height is swung at 10 mm in consideration of pattern damage to the semiconductor substrate 14 due to high-speed flow caused by cavitation in the ultrasonic moving nozzle 12. When the ultrasonic moving nozzle 12 is used, particles are removed by a high-speed flow caused by bubble collapse generated around the cleaning liquid nozzle and a radiant flow generated on the semiconductor substrate 14 by the rotation of the chuck base 15. Then, after rinsing with the side nozzle 13, the semiconductor substrate 14 is dried by rotating at high speed.

本実施の形態では、ドライエッチ後の残渣物等のパーティクル除去用途として、オゾン水、水素水等第一の実施の形態で説明した機能水のもつ、有機物や金属除去能力の有る洗浄液に超音波振動を加える事により、洗浄液中にラジカルを発生させる事により洗浄液のパーティクルの除去機能性能をさらに向上させることができる。   In this embodiment, ultrasonic cleaning is applied to the cleaning liquid having the ability to remove organic substances and metals with functional water described in the first embodiment such as ozone water and hydrogen water as a particle removal application such as residues after dry etching. By applying vibration, radicals are generated in the cleaning liquid, so that the function of removing particles of the cleaning liquid can be further improved.

本発明は、半導体基板洗浄に関するものでありパターンダメージの少ない洗浄方法として有用である。また液晶等の製品製造にも応用できる。   The present invention relates to semiconductor substrate cleaning, and is useful as a cleaning method with little pattern damage. It can also be applied to the manufacture of products such as liquid crystals.

本発明の基板洗浄装置に使用する超音波移動ノズルを示す概略図Schematic showing an ultrasonic moving nozzle used in the substrate cleaning apparatus of the present invention 本発明の基板洗浄装置の要部を示す図The figure which shows the principal part of the board | substrate cleaning apparatus of this invention 従来の基板洗浄装置の要部を示す図The figure which shows the principal part of the conventional board | substrate cleaning apparatus

符号の説明Explanation of symbols

1a 洗浄液
1b 超音波振動子によりキャビテーションを起こした洗浄液
2 洗浄液の流量調整機構付き調圧バルブ
3 薬液流量計
4 ノズル本体
5 超音波振動子
6 半導体基板
11 洗浄液吐出ノズル
12 超音波移動ノズル
13 サイドノズル
14 半導体基板
15 チャックベース
16 キャビテーションを起こした洗浄液
17 表面カップ
19 洗浄液
20 超音波振動子
21 洗浄液吐出口
22 半導体基板
23 チャックベース
24 サイドノズル
25 洗浄液吐出ノズル(位置移動無)
26 表面カップ
27 超音波移動ノズル
DESCRIPTION OF SYMBOLS 1a Cleaning liquid 1b Cleaning liquid which caused cavitation by ultrasonic vibrator 2 Pressure regulating valve with flow adjustment mechanism of cleaning liquid 3 Chemical liquid flow meter 4 Nozzle body 5 Ultrasonic vibrator 6 Semiconductor substrate 11 Cleaning liquid discharge nozzle 12 Ultrasonic moving nozzle 13 Side nozzle DESCRIPTION OF SYMBOLS 14 Semiconductor substrate 15 Chuck base 16 Cavitation-induced cleaning liquid 17 Surface cup 19 Cleaning liquid 20 Ultrasonic vibrator 21 Cleaning liquid discharge port 22 Semiconductor substrate 23 Chuck base 24 Side nozzle 25 Cleaning liquid discharge nozzle (no position movement)
26 Surface cup 27 Ultrasonic moving nozzle

Claims (5)

ノズル内で超音波を発生する手段と、前記超音波はノズル内の液体を振動させること、かつ、前記超音波が液体吐出方向に伝播しない事とを特徴とする、ノズルを備えた基板洗浄装置。 Means for generating ultrasonic waves in the nozzle, the ultrasonic wave vibrates the liquid in the nozzle, and the ultrasonic waves do not propagate in the liquid discharge direction, and the substrate cleaning apparatus having a nozzle . 超音波の伝播方向が、ノズル吐出方向に対して、ほぼ垂直であることを特徴とする、請求項1に記載の基板洗浄装置。 The substrate cleaning apparatus according to claim 1, wherein the propagation direction of the ultrasonic wave is substantially perpendicular to the nozzle discharge direction. 超音波の伝播方向が、ノズル吐出方向に対して、可変であることを特徴とする、請求項1に記載の基板洗浄装置。 The substrate cleaning apparatus according to claim 1, wherein an ultrasonic wave propagation direction is variable with respect to a nozzle discharge direction. ノズルが被洗浄基板に対して洗浄ノズル位置が可変であることを特徴とした、請求項1から3に記載の基板洗浄装置。 4. The substrate cleaning apparatus according to claim 1, wherein the position of the cleaning nozzle is variable with respect to the substrate to be cleaned. ノズル内で超音波を発生する手段と、前記超音波はノズル内の液体を振動させること、かつ、前記超音波が液体吐出方向に伝播しない事とを特徴とするノズルを用いて超音波振動で発生したキャビテーション効果による気泡を含む液体を、気泡崩壊の圧力変動による高速流を用いて、被洗浄基板を洗浄する基板洗浄方法。 Means for generating ultrasonic waves in the nozzle, and the ultrasonic waves vibrate the liquid in the nozzle, and the ultrasonic waves are ultrasonically vibrated using a nozzle characterized in that the ultrasonic waves do not propagate in the liquid discharge direction. A substrate cleaning method for cleaning a substrate to be cleaned by using a high-speed flow due to pressure fluctuation of bubble collapse for a liquid containing bubbles due to a generated cavitation effect.
JP2004041100A 2004-02-18 2004-02-18 Apparatus and method for substrate cleaning Pending JP2005235897A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004041100A JP2005235897A (en) 2004-02-18 2004-02-18 Apparatus and method for substrate cleaning

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004041100A JP2005235897A (en) 2004-02-18 2004-02-18 Apparatus and method for substrate cleaning

Publications (1)

Publication Number Publication Date
JP2005235897A true JP2005235897A (en) 2005-09-02

Family

ID=35018552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004041100A Pending JP2005235897A (en) 2004-02-18 2004-02-18 Apparatus and method for substrate cleaning

Country Status (1)

Country Link
JP (1) JP2005235897A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010212690A (en) * 2009-03-06 2010-09-24 Imec Method for physical force assisted cleaning with reduced damage
JP2013154315A (en) * 2012-01-31 2013-08-15 Ricoh Co Ltd Thin film forming apparatus, thin film forming method, electro-mechanical transducer element, liquid ejecting head, and inkjet recording apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010212690A (en) * 2009-03-06 2010-09-24 Imec Method for physical force assisted cleaning with reduced damage
JP2013154315A (en) * 2012-01-31 2013-08-15 Ricoh Co Ltd Thin film forming apparatus, thin film forming method, electro-mechanical transducer element, liquid ejecting head, and inkjet recording apparatus

Similar Documents

Publication Publication Date Title
JP4242677B2 (en) Wafer cleaning system
US8083856B2 (en) Ultrasonic cleaning apparatus and ultrasonic cleaning method
KR100598112B1 (en) Megasonic cleaner having double cleaning probe and cleaning method
KR20010021285A (en) Apparatus and method for cleaning semiconductor substrate
JP2008021672A (en) Ultrasonic cleaning method and cleaning device using gas supersaturation solution
JP2007311756A (en) Ultrasonic cleaner and ultrasonic cleaning method
WO2010021405A1 (en) Ultrasonic cleaning apparatus
JP2003332286A (en) Apparatus and method for cleaning semiconductor wafer
JPH0855827A (en) Wafer cassette and cleaning equipment using it
KR20090116708A (en) Ultrasonic cleaning method
KR100952087B1 (en) Method and apparatus for megasonic cleaning of patterned substrates
JP4599323B2 (en) Ultrasonic cleaning apparatus and ultrasonic cleaning method
JP2008288541A (en) Single wafer processing cleaning apparatus
JPH1022246A (en) Cleaning method
JP2005085978A (en) Single-wafer type cleaning method and cleaning device
JP2005235897A (en) Apparatus and method for substrate cleaning
JP2019145672A (en) Cleaning device
JP4533406B2 (en) Ultrasonic cleaning apparatus and ultrasonic cleaning method
KR100683275B1 (en) Vibrating unit and megasonic cleaning apparatus comprising the same
JP2010082621A (en) Ultrasonic cleaning apparatus
JP2006281012A (en) Substrate cleaning device, substrate cleaning method and manufacturing method of substrate
JP4334813B2 (en) Substrate cleaning apparatus and substrate cleaning method
KR100694798B1 (en) Method for cleaning the subsrtrate
JP2007152207A (en) Ultrasonic washing apparatus
KR100242942B1 (en) Washing apparatus for using a multi-oscillation ultrasonic wave

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20050711

A977 Report on retrieval

Effective date: 20061002

Free format text: JAPANESE INTERMEDIATE CODE: A971007

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061010

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070306