JP2005229098A5 - - Google Patents
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- JP2005229098A5 JP2005229098A5 JP2004345436A JP2004345436A JP2005229098A5 JP 2005229098 A5 JP2005229098 A5 JP 2005229098A5 JP 2004345436 A JP2004345436 A JP 2004345436A JP 2004345436 A JP2004345436 A JP 2004345436A JP 2005229098 A5 JP2005229098 A5 JP 2005229098A5
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- JP
- Japan
- Prior art keywords
- antenna
- substrate
- thin film
- integrated circuit
- film integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 18
- 239000010409 thin film Substances 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000010408 film Substances 0.000 claims 3
- 229910052737 gold Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
Claims (10)
前記アンテナは前記基板上に形成されており、
前記薄膜集積回路は、前記アンテナと電気的に接続するように、前記基板に貼り合わされており、
前記基板は、前記薄膜集積回路を間に挟むように折り畳まれていることを特徴とする半導体装置。 A thin film integrated circuit using a thin film transistor, an antenna, and a flexible substrate;
The antenna is formed on the substrate;
The thin film integrated circuit is bonded to the substrate so as to be electrically connected to the antenna,
The semiconductor device, wherein the substrate is folded so as to sandwich the thin film integrated circuit therebetween.
前記アンテナは前記袋状の基板の内部に形成されており、
前記薄膜集積回路は、前記アンテナと電気的に接続するように、前記袋状の基板の内部に貼り合わされていることを特徴とする半導体装置。 A thin film integrated circuit using a thin film transistor, an antenna, and a flexible bag-shaped substrate;
The antenna is formed inside the bag-shaped substrate,
The thin film integrated circuit is bonded to the inside of the bag-shaped substrate so as to be electrically connected to the antenna.
前記アンテナは液滴吐出法を用いて形成されており、なおかつＡｇ、ＡｕまたはＣｕを用いていることを特徴とする半導体装置。 In claim 1 or claim 2 ,
The semiconductor device is characterized in that the antenna is formed by a droplet discharge method and Ag, Au, or Cu is used .
前記基板は、折目と、前記折目に沿って設けられた窪みとを有することを特徴とする半導体装置。The substrate has a fold and a recess provided along the fold.
前記基板は折目を有しており、前記基板の折目が設けられた領域において、前記アンテナの一部は並列に接続された複数の配線であることを特徴とする半導体装置。2. The semiconductor device according to claim 1, wherein the substrate has a fold, and a part of the antenna is a plurality of wirings connected in parallel in a region where the fold of the substrate is provided.
前記基板は折目を有しており、前記基板の折目が設けられた領域において、前記アンテナの一部は他の領域よりも幅が太いことを特徴とする半導体装置。The semiconductor device according to claim 1, wherein the substrate has a fold, and in the region where the fold is formed in the substrate, a part of the antenna is wider than another region.
前記薄膜集積回路は、前記アンテナによって前記薄膜集積回路が有する接続端子に入力された交流の信号から直流の電源電圧を生成する整流回路と、前記交流の信号を復調して第１の信号を形成する復調回路と、前記第１の信号に従って演算処理を行ない、第２の信号を生成するマイクロプロセッサと、前記第２の信号を変調する変調回路と、前記変調された第２の信号に従って、前記アンテナにかかる負荷を変調するスイッチとを有することを特徴とする半導体装置。 In any one of Claims 1 thru | or 6,
The thin film integrated circuit is formed a rectifier circuit for generating a DC supply voltage, a first signal by demodulating the signal of the AC from the AC signal input to the connection terminals of said thin film integrated circuit by the antenna A demodulating circuit that performs arithmetic processing according to the first signal, generates a second signal, a modulation circuit that modulates the second signal, and the modulated second signal, And a switch for modulating a load applied to the antenna.
前記第１のアンテナは前記第１の基板上に形成されており、
前記第２のアンテナは前記第２の基板上に形成されており、
前記薄膜集積回路は、前記第１のアンテナと電気的に接続するように、前記第１の基板に貼り合わされており、
前記第２の基板は、前記第１のアンテナと前記第２のアンテナとが電気的に接続されるように、なおかつ前記第１のアンテナと、前記第２のアンテナと、前記薄膜集積回路とを間に挟むように、前記第１の基板と重なっていることを特徴とする半導体装置。 A thin film integrated circuit using a thin film transistor, first and second antennas, and flexible first and second substrates,
The first antenna is formed on the first substrate;
The second antenna is formed on the second substrate;
The thin film integrated circuit is bonded to the first substrate so as to be electrically connected to the first antenna,
The second substrate includes the first antenna, the second antenna, and the thin film integrated circuit so that the first antenna and the second antenna are electrically connected to each other. A semiconductor device which overlaps with the first substrate so as to be sandwiched therebetween.
前記第１のアンテナまたは前記第２のアンテナは、液滴吐出法を用いて形成されており、なおかつＡｇ、ＡｕまたはＣｕを用いていることを特徴とする半導体装置。 In claim 8 ,
The semiconductor device, wherein the first antenna or the second antenna is formed by a droplet discharge method, and Ag, Au, or Cu is used .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004345436A JP2005229098A (en) | 2003-12-12 | 2004-11-30 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003414848 | 2003-12-12 | ||
| JP2004009529 | 2004-01-16 | ||
| JP2004345436A JP2005229098A (en) | 2003-12-12 | 2004-11-30 | Semiconductor device and manufacturing method thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012125846A Division JP2012212893A (en) | 2003-12-12 | 2012-06-01 | Semiconductor device and wireless tag |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005229098A JP2005229098A (en) | 2005-08-25 |
| JP2005229098A5 true JP2005229098A5 (en) | 2007-12-06 |
Family
ID=35003515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004345436A Withdrawn JP2005229098A (en) | 2003-12-12 | 2004-11-30 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005229098A (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7768405B2 (en) * | 2003-12-12 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
| JP5121183B2 (en) * | 2005-08-31 | 2013-01-16 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
| WO2007063786A1 (en) | 2005-11-29 | 2007-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Antenna and manufacturing method thereof, semiconductor device including antenna and manufacturing method thereof, and radio communication system |
| KR101319468B1 (en) | 2005-12-02 | 2013-10-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Manufacturing method of semiconductor device |
| JP5132135B2 (en) * | 2005-12-02 | 2013-01-30 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| EP2021985B1 (en) * | 2006-04-28 | 2012-04-18 | Ask S.A. | Radio frequency identification device medium and method for making same |
| JP5023640B2 (en) * | 2006-09-27 | 2012-09-12 | 富士ゼロックス株式会社 | Connection structure, image display device and image display system |
| EP1970951A3 (en) * | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP2019425A1 (en) | 2007-07-27 | 2009-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5248240B2 (en) | 2007-08-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| WO2010044312A1 (en) * | 2008-10-17 | 2010-04-22 | コニカミノルタエムジー株式会社 | Array-type ultrasonic vibrator |
| JP5457741B2 (en) | 2009-07-01 | 2014-04-02 | 富士通株式会社 | RFID tag |
| JP2011221006A (en) * | 2010-03-23 | 2011-11-04 | Tokyo Electron Ltd | Wafer type temperature detection sensor and method of manufacturing the same |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4345610B4 (en) * | 1992-06-17 | 2013-01-03 | Micron Technology Inc. | Method for producing a radio-frequency identification device (HFID) |
| JP2970411B2 (en) * | 1993-08-04 | 1999-11-02 | 株式会社日立製作所 | Semiconductor device |
| JPH11167612A (en) * | 1997-12-02 | 1999-06-22 | Hitachi Ltd | Radio ic card |
| JP2000020665A (en) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | Semiconductor device |
| JP4244446B2 (en) * | 1999-06-09 | 2009-03-25 | コニカミノルタホールディングス株式会社 | Information display device and driving method thereof |
| US6478229B1 (en) * | 2000-03-14 | 2002-11-12 | Harvey Epstein | Packaging tape with radio frequency identification technology |
| JP2002366917A (en) * | 2001-06-07 | 2002-12-20 | Hitachi Ltd | Ic card incorporating antenna |
| JP2003142666A (en) * | 2001-07-24 | 2003-05-16 | Seiko Epson Corp | Transfer method for element, method for manufacturing element, integrated circuit, circuit board, electrooptic device, ic card and electronic apparatus |
| JP4682478B2 (en) * | 2001-08-07 | 2011-05-11 | 株式会社デンソー | Non-contact IC card communication system, IC card and IC card reader |
| JP2003123047A (en) * | 2001-10-15 | 2003-04-25 | Sharp Corp | Semiconductor device and manufacturing method therefor |
| JP2003133691A (en) * | 2001-10-22 | 2003-05-09 | Seiko Epson Corp | Method and device for forming film pattern, conductive film wiring, electro-optical device, electronic equipment, and non-contact card medium |
| JP3927829B2 (en) * | 2002-01-30 | 2007-06-13 | トッパン・フォームズ株式会社 | Information concealment sheet having a conductive circuit |
| JP4118706B2 (en) * | 2003-02-25 | 2008-07-16 | 株式会社半導体エネルギー研究所 | Method for manufacturing liquid crystal display device |
-
2004
- 2004-11-30 JP JP2004345436A patent/JP2005229098A/en not_active Withdrawn
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