JP2005223294A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device where high vacuum in an internal space is maintained without the occurrence of out gas by supporting a getter at the opening part of a case material by a projecting part so as to fix the getter without using organic solvent, and to provide a manufacturing method of the semiconductor device. <P>SOLUTION: The semiconductor device 10 consists of a semiconductor element 16, the case material 12, an absorbing material 27, an absorbing material 27, a cap material 14, and en external terminal 18. A supporting substrate 11 is made of metal, and the semiconductor element 16 is placed on its surface. Then, at the peripheral part of an area in which the semiconductor element 16 is placed, a plurality of pads 13 connected with the external terminal 18 are formed. In this case, the supporting substrate 11 is circular, but it can have another shape like a rectangle or the like. In addition, material other than metal such as glass, ceramic or resin material can be used for the material of the supporting substrate 11. The projecting part is formed at the getter. The getter is formed to be larger than a clearance between a getter inner diameter and an opening part side wall. Thus, the projecting part is bent by weighting and becomes a stopper. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor device incorporating a semiconductor element and a method for manufacturing the same.

  A conventional semiconductor device device 100 will be described with reference to FIG. FIG. 8 is a cross-sectional view of the semiconductor device.

  As shown in FIG. 8, in the conventional semiconductor device 100, the support substrate 51 is made of metal, and the semiconductor element 52 is placed on the surface thereof.

  The semiconductor element 52 has a desired electric circuit formed on the surface thereof and is disposed near the center of the support substrate 51. The semiconductor element 52 and the external terminal 57 are electrically connected via the fine metal wire 56.

  The cap material 53 is made of metal and is provided on the surface of the support substrate 51 so as to cover the semiconductor element 52 and the fine metal wires 56, and the internal space of the package is in a vacuum.

Further, in order to maintain the degree of vacuum inside the package, an adsorbent 54 for impurities in the internal space is provided. The adsorbent 54 is wound around a shaft made of a conductive material in a rod shape and connected to the energizing terminal 55. The energization terminal 55 heats and activates the adsorbent by energizing the internal space after evacuating it. (For example, refer to Patent Document 1.)
In a package in which the internal space is evacuated as described above, there is a structure in which a getter is arranged around the chip as a structure that employs a large getter to ensure long-term reliability.

  A semiconductor device 200 in which getters are arranged around the chip will be described with reference to FIGS. FIG. 9A is a plan view and FIG. 9B is a side view of the semiconductor device. In FIG. 9A, the cap material is omitted.

  Referring to the figure, in conventional semiconductor device 100, support substrate 11 is made of metal, and semiconductor element 16 is placed on the surface thereof. A plurality of pads 13 that are continuous with the external terminals 18 are formed in the periphery of the region where the semiconductor element 16 is placed.

  The semiconductor element 16 has a desired electric circuit formed on the surface thereof and is disposed near the center of the support substrate 11. The semiconductor element 16 and the pad 13 are electrically connected via the fine metal wire 15.

  The case material 12 is made of metal and covers the surface of the support substrate 11 so as to cover the semiconductor element 16, the fine metal wire 15, and the pad 13. Specifically, the main body 12a of the case material 12 mainly covers the semiconductor element 16 with its side surface and upper surface. Further, the upper surface of the case material main body 12a has an opening 12b, and the opening 12c has a side wall 12c integrated with the main body 12a.

  An adsorbent 17 for adsorbing impurities in a space for sealing the semiconductor element is placed around the opening 12b. The adsorbent 17 is positioned so that the inside is positioned by the opening side wall 12c and overlaps the upper portion of the main body 12a.

  The cap material 14 covers the case material 12 and the adsorbing material 17, and seals the semiconductor element 16 by being fixed to the support substrate 11. A glass material 20 on which external light is incident is disposed on the upper surface of the cap material 14.

In addition, referring to the cross-sectional view of FIG. 10, when the internal space is set to a high vacuum in the manufacturing process of the semiconductor device described above, at least the adsorbent 17 is sealed with the cap material 14 from the step of placing the adsorbent 17 on the case material 12. The process is continuously performed in a vacuum atmosphere. Specifically, in the vacuum chamber, the support substrate 11 to which the semiconductor element 16 and the case material 12 are fixed is moved to a predetermined position, and the heated adsorbent 17 is supported by a jig (conveying claw) 30 and positioned. They are put together and placed on the case material 12. The shape of the adsorbent 17 substantially matches the shape of the upper portion of the main body 12a and the opening side wall 12c, and is supported by these. Thus, since the adsorbent 17 is attached by the method of mounting on the case material 12 by the jig 30, the case material main body 12a and the opening 12b have a shape that allows the adsorbent 17 to be easily placed and supported. Yes. That is, the adsorbent 17 is substantially supported by and supported by the shapes of the upper part of the main body 12a and the opening side wall 12c. Then, after the cap material 14 is mounted on the support substrate and sealed in the same vacuum chamber, it is carried out to the atmosphere.
JP-A-9-126882

  The internal space consisting of the case material 12, the cap material 14 and the support substrate 11 is at an atmospheric pressure lower than the external atmospheric pressure. Thus, by making the internal space a high vacuum, the heat energy can be efficiently converted to an electric signal from the relationship between the structure, size, and sensitivity of the thermopile.

In particular, in the semiconductor device 100 in which the internal space needs to be maintained at a high vacuum (for example, about 10 ⁻³ Torr), it is necessary to guarantee a predetermined degree of vacuum at the beginning of shipment for a long period of time.

  Therefore, an adsorbent 17 formed of a sintered alloy having a characteristic of adsorbing impurities such as oxygen, nitrogen, carbon dioxide and hydrogen that deteriorates the degree of vacuum is placed in the package to prevent deterioration of the degree of vacuum in the internal space. It is out. Since the adsorbing material 17 has a larger adsorbing effect when it has a larger area, it is formed, for example, in a ring shape so as to overlap the case material 12 as shown in FIG.

  In the semiconductor device manufacturing process as shown in FIG. 10, at least the process of placing the adsorbent 17 on the case material 12 and the process of sealing with the cap material 14 are performed in a vacuum chamber. For this reason, the adsorbent 17 is simply mounted on the upper portion of the main body 12a so that the attachment with a jig in the vacuum chamber is easy. In consideration of mounting misalignment, a predetermined clearance (for example, 0.1 mm to 0.2 mm) is secured between the inner diameter of the adsorbent 17 and the opening side wall 12c.

  As described above, since the adsorbent 17 is not fixed to any of them, the adsorbent 17 vibrates inside the completed semiconductor device 100. The vibration of the adsorbent 17 may cause deterioration of the glass material 20 or the like when the cap material 14 is provided on the top of the cap material 14, for example. Become. Further, when the adsorbent 17 which is a sintered alloy vibrates, ultrafine metal particles (microparticles) are generated and adhere to the surface of the semiconductor element 16 to deteriorate the characteristics of the element.

  On the other hand, adhesion by an organic solvent or the like is conceivable for fixing the adsorbent 17, but the organic solvent is not suitable for fixing because outgas is generated in the internal space with time and the degree of vacuum is deteriorated. Moreover, since the attachment process of the adsorbent 17 is performed in a vacuum chamber, there is a problem that it is difficult to fix the adsorbent 17 and the case material 12 by welding or the like.

  The present invention has been made in view of the above problems. First, a semiconductor element placed on the surface of a support substrate, a case material placed on the support substrate so as to cover the periphery of the semiconductor element, and the case An adsorbent that is mounted superimposed on a material; a cap material that covers the case material and the adsorbent and seals the semiconductor element; and an external terminal that is fixed to the support substrate and electrically connected to the semiconductor element. The case material comprises a main body that covers the semiconductor element on a side surface and an upper surface, and an opening that is provided on the upper surface and has a side wall that is integrated with the upper surface. The problem is solved by fixing by contacting the side wall of the opening.

  Secondly, a semiconductor element placed on the surface of the support substrate, a case material placed on the support substrate so as to cover the periphery of the semiconductor element, and an adsorbent mounted so as to overlap the case material A cap material that covers the case material and the adsorbent material and seals the semiconductor element; and an external terminal that is fixed to the support substrate and electrically connected to the semiconductor element. And a main body covering the semiconductor element on the upper surface, and an opening having a sidewall provided on the upper surface and integrated with the upper surface, and the adsorbent is disposed on an outer periphery or an inner periphery of the opening, The problem is solved by abutting and fixing the protrusion provided on the material to the side wall of the opening.

  Further, the protruding portion protrudes larger than the separation distance between the adsorbent and the opening side wall.

  Further, the adsorbent has an outer periphery that is about the same size or smaller as the outer periphery of the case material body, an inner periphery is slightly larger than the opening, and the protrusion is provided on the inner periphery. It is.

  Further, the protruding portion of the adsorbent is bent and comes into contact with the side wall of the opening.

  Further, the adsorbent is made of an alloy that adsorbs impurities in a space in which the semiconductor element is sealed.

  Further, the space sealed by the support substrate and the cap material has a pressure lower than the atmospheric pressure.

  A part of the cap material above the semiconductor element is made of a material that transmits light of a predetermined wavelength.

  Third, a case material having a step of fixing a semiconductor element to a support substrate, a main body that covers the semiconductor element on a side surface and an upper surface, and an opening having a side wall that is provided on the upper surface and is integrated with the upper surface. A step of placing on the surface of the support substrate, a step of abutting and fixing at least a part of the adsorbent on the side wall of the opening, and a cap material covering the case material and the adsorbent and sealing the semiconductor element And fixing the substrate to the support substrate.

  Further, at least a part of the adsorbent is brought into contact with the opening side wall by applying an external force to the adsorbent.

  Fourth, a case material having a step of fixing a semiconductor element to a support substrate, a main body that covers the semiconductor element on a side surface and an upper surface, and an opening having a side wall that is provided on the upper surface and is integrated with the upper surface. A step of placing on the surface of the support substrate; a step of fixing the adsorbent by bringing a protruding portion provided on the adsorbent into contact with a side wall of the opening; and covering the case material and the adsorbent, And a step of fixing a cap member for sealing the semiconductor element to the support substrate.

  The adsorbing material is placed on the case material and then weighted to bend the protruding portion so that the protruding portion comes into contact with the side wall of the opening.

  Further, the adsorbent is fixed to the case material in an atmosphere whose pressure is lower than atmospheric pressure.

  Further, the adsorbent is made of an alloy that adsorbs impurities in a space in which the semiconductor element is sealed.

  In the present invention, the following effects can be obtained.

  1stly, a getter can be supported by the opening part of a case material with a protrusion part. Since the getter can be fixed without using an organic solvent, no outgas is generated and a high vacuum in the internal space can be maintained.

  Second, since the getter does not vibrate, noise can be prevented. In addition, since the glass material can be prevented from deteriorating due to the contact with the vibrated getter, the degree of vacuum can be maintained for a long time. Moreover, since generation of ultrafine metal particles due to vibration of the getter can be prevented, adhesion to the semiconductor element can be prevented.

  Third, the getter can be fixed and the support substrate and the cap material can be fixed in the same vacuum chamber, and can be sealed in a high vacuum state.

  An embodiment of the present invention will be described with reference to FIGS.

  First, a specific structure of the semiconductor device 10 of the present invention will be described with reference to FIG. 1A is a plan view of the semiconductor device 10, FIG. 1B is a perspective view thereof, and FIG. 1C is a cross-sectional view. In FIGS. 1A and 1B, the cap material is omitted. The same components as those in FIGS. 9 and 10 are denoted by the same reference numerals.

  The semiconductor device 10 of the present invention includes a semiconductor element 16, a case material 12, an adsorbent material 27, a cap material 14, and an external terminal 18.

  Referring to FIGS. 1A and 1B, support substrate 11 is made of metal, and semiconductor element 16 is placed on the surface thereof. A plurality of pads 13 that are continuous with the external terminals 18 are formed in the periphery of the region where the semiconductor element 16 is placed. Here, the support substrate 11 has a circular shape, but may have another shape such as a rectangle. Furthermore, the support substrate 11 can be made of a material other than metal, and glass, ceramic, resin material, or the like can also be adopted.

  The semiconductor element 16 has a desired electric circuit formed on the surface thereof and is disposed near the center of the support substrate 11. The semiconductor element 16 and the pad 13 are electrically connected via the fine metal wire 15. The semiconductor element 16 is fixed by an insulating low-outgas die attach agent such as silicone resin, epoxy resin, or fluorine resin. Although not shown, the semiconductor element 16 may be mechanically fixed to the support substrate 11 with a frame material as a fixing portion.

  The case material 12 is made of, for example, a metal such as Kovar, and is provided on the surface of the support substrate 11 so as to cover the periphery of the semiconductor element 16, the fine metal wire 15, and the pad 13. The case material 12 includes a main body 12a that covers the semiconductor element on the side surface and the upper surface, and an opening 12b that is provided on the upper surface of the main body 12a and has a side wall 12c integrated with the upper surface. The main body 12a is a disc-shaped support substrate. 11 and the peripheral part. Furthermore, materials other than metal can be used as the material of the case material 12, and glass, ceramic, resin material, or the like can also be used. The opening 12 b is located above the semiconductor element 16 fixed to the support substrate 11. In the figure, the support substrate 11 is exposed outside the case material 12, but the case material 12 may be provided with a ridge so as to cover this portion.

  The adsorbent 27 is disposed on the outer periphery of the case material opening 12b so as to overlap the case material 12. As shown in FIG. 1C, the adsorbent 27 has a protruding portion 27a on the inner periphery (inner diameter), and the protruding portion 27a is fixed in contact with the opening side wall 12c. That is, the adsorbing material 27 is fixed to the case material 12 by the protruding portion 27a incliningly contacting the clearance between the inner periphery of the protruding material 27a and the opening side wall 12c. Details of the adsorbent 27 will be described later.

  The external terminal 18 is made of a conductor fixed to the support substrate 11, passes through the support substrate 19, extends continuously from the pad 13, and has a function of performing electrical input / output with the outside. Therefore, the external terminal 18 is electrically connected to the semiconductor element 16 via the pad 13 and the fine metal wire 15. Further, the gap between the external terminal 18 and the support substrate 11 is filled with a filler 19 in order to prevent the outside air from entering the internal space. Furthermore, when the support substrate 11 is made of a metal, an electrical short circuit between the support substrate 11 and the external terminal 18 can be prevented by adopting an insulating material as the filler 19. More preferably, by employing low melting point glass as the filler 19, vaporization of the filler 19 due to high vacuum in the internal space can be suppressed. Further, the low melting point glass is excellent in workability because of its low melting point.

  The cap material 14 is, for example, a Kovar having a plate thickness of 0.2 mm, covers the case material 12 and the adsorbent material 27, is fixed to the support substrate 11 by welding or the like, and seals the semiconductor element 16. The portion of the cap material 14 corresponding to the upper side of the semiconductor element 16 is made of a glass material 20 that transmits light of a predetermined wavelength, and the glass material 20 has an antireflection film such as DLC (Diamond Like Carbon). Is coated.

The space sealed by the support substrate 11 and the cap material 14 has a pressure lower than the atmospheric pressure. Specifically, the atmospheric pressure in this internal space is an extremely low atmospheric pressure (high vacuum) of about 1 × 10 ⁻³ Torr.

  The adsorbent 27 will be described with reference to FIG. The adsorbent 27 is formed by molding a sintered alloy of a metal having a property to occlude impurities in a space in which the semiconductor element 16 is sealed, for example, hydrogen, oxygen, carbon dioxide, nitrogen, and the like. This is called a getter.

  The shape of the getter 27 is, for example, a ring shape that substantially matches the upper portion of the case material main body 12a and the opening side wall 12c, and the inner diameter is slightly larger than the opening side wall 12c, and the inner diameter of the getter 27, the opening side wall, and 12c. The clearance is about 0.2 mm, for example. Since the outer diameter of the getter 27 is covered with the case material 12 by the cap material 14, the outer diameter is equal to or smaller than the side wall of the case material main body 12 a. The thickness is about 1.2 mm or less.

  For example, as shown in FIG. 2A, the getter 27 is formed by forming a sintered alloy of zirconium, titanium, iron, and vanadium (hereinafter referred to as a getter material 271) into a ring shape with a thickness of about 0.1 mm to 0.2 mm. , Iron, copper, aluminum, nichrome iron, and the like fixed to the upper and lower sides of the fixing plate 272. Further, the getter material 271 itself may be formed in a ring shape without using the fixing plate 272 as shown in FIG. 2 (B), and the getter material 271 is not a structure sandwiching the fixing plate 272 as shown in FIG. 2 (C). A two-layer structure in which the fixing plate 272 is fixed by welding or the like may be used. Moreover, a multilayer structure combining these may be used.

  A protrusion 27 a is provided on the lower or upper inner side of the getter 27. In the figure, the three protrusions 27a are provided at the lower portion of the getter 27, but the present invention is not limited to this, and may be one. The protruding portion 27a protrudes from the inner diameter of the getter 27 into a rectangular shape of about 0.3 mm × 0.3 mm, for example. More specifically, the protrusion 27a is made of the getter material 271 in the case of FIG. 2A or 2B, and is made of the fixing plate 272 in the case of FIG.

  The getter 27 having a surface area as large as possible has a higher effect of adsorbing impurities and is effective in maintaining the degree of vacuum. On the other hand, in the case of a semiconductor device that is used by making light incident on the semiconductor element 16, a shape that does not block the opening 12 through which light of a specific wavelength enters is desirable. Therefore, by providing the getter 27, for example, in a ring shape so as to overlap the upper part of the case material body 12a, the package can be reduced in size and the path of incident light is not blocked.

  In the present embodiment, as will be described in detail later, in the step of placing the getter 27, the protrusion 27a is bent by inserting the getter 27 into the case material opening 12b while applying weight. The bent protrusion 27a comes into contact with the clearance between the opening side wall 12c and the inner diameter of the getter 27 to form a stopper. That is, there is substantially no clearance, and thereby the getter 27 is fixed to the case material 12 (see FIG. 1C).

  Thus, in this embodiment, since it can fix without using organic substance, the getter 27 can be fixed without generating the outgas which prevents a high vacuum state. Furthermore, fixing in a vacuum chamber where welding is impossible is possible.

  The numerical values of the protrusions 27a or the getters 27 are examples, and are appropriately selected in consideration of the strength and clearance of the getter material 271 and the fixing material 272 to be employed.

  That is, when the getter 27 is placed, the getter material 271 or the fixing material that constitutes the protruding portion 27a is bent so as not to be lost and is bent so as to contact the inner diameter of the getter 27 and the side wall of the opening 12c. In consideration of the strength and clearance of 272, the size of the protrusion 27a and the thickness of the getter 27 are determined.

  A method of manufacturing the semiconductor device 10 described above will be described with reference to FIG. The manufacturing method of the semiconductor device 10 of the present invention includes a step of fixing a semiconductor element to a support substrate, a main body that covers the semiconductor element on a side surface and an upper surface, and an opening having a side wall provided on the upper surface and integrated with the upper surface. A step of placing a case material on the surface of the support substrate, a step of abutting and fixing at least a portion of the adsorbent material on a side wall of the opening, covering the case material and the adsorbent material, And a step of fixing a cap material for sealing the semiconductor element to the support substrate.

  1st process (refer FIG. 3): The process of adhering a semiconductor element to a support substrate.

  The semiconductor element 16 is fixed to the support substrate 11 with a low outgas die attach agent such as silicone resin, epoxy resin, or fluorine resin. Although not shown, a frame material may be fixed to the support substrate 11 by spot welding or soldering, and the semiconductor element 16 may be mechanically fixed by the frame material.

  A plurality of pads 13 made of a conductive material are formed on the support substrate 11 outside the semiconductor element 16 mounting region. Each pad 13 is electrically connected to an external terminal 18 extending outside the device by a metal thin wire 15 or the like.

  Second step (see FIG. 4): a step of placing on the surface of the support substrate a case material having a main body that covers the semiconductor element on the side surface and the upper surface, and an opening having a sidewall provided on the upper surface and integrated with the upper surface. .

  Next, the case material is placed on the surface of the support substrate and fixed in the air or in an inert gas atmosphere. The case material is composed of a main body and an opening. The main body covers the semiconductor element with its side and upper surfaces, and the opening has a side wall provided on the upper surface of the main body and integrated with the upper surface.

  Connection between the case material 12 and the support substrate 11 can be performed by welding when both are metal. Further, the connection between the two can be performed by a connection using a brazing material such as solder. Thereby, the semiconductor element 16 is covered with the upper surface and side surface of the case material main body.

  Third step (see FIG. 5): a step of abutting and fixing at least a part of the adsorbent on the side wall of the opening.

The adsorbent is fixed around the opening under high vacuum such as in a vacuum chamber. The high vacuum here is, for example, an atmospheric pressure of about 1 × 10 ⁻⁵ Torr, and heat conduction through this space can be extremely reduced. Further, by maintaining a high vacuum, for example, light of a specific wavelength can be converted into a current with high accuracy.

  First, the getter 27 is prepared. As shown in FIG. 2, the getter 27 has, for example, a ring shape that substantially matches the upper portion of the main body 12a and the side wall 12c of the opening. Moreover, the protrusion part 27a is provided in the inner periphery. The protrusion 27a is larger than the clearance between the inner diameter of the getter 27 and the opening side wall 12c, and has a rectangular shape of, for example, about 0.3 mm × 0.3 mm. The figure shows a structure in which a getter 27 sandwiching the upper and lower sides of a metal fixing plate 272 with a getter material 271 has a projecting portion 27a at its lower part.

In order to activate the surface of the getter 27 in the initial state, the getter 27 is preheated at about 500 ° C. to 800 ° C. by a heater or the like. Since this process is performed under high vacuum, the process is performed in the same vacuum chamber as the previous process. When such getter activation (heating) is performed in an atmosphere containing oxygen, the getter burns, and thus it is necessary to carry out in a vacuum of 10 ⁻⁴ Torr or less.

  Although the heating temperature of the getter 27 varies depending on the alloy material constituting the getter 27, oxygen in the atmosphere attached to the surface before assembly can be taken into the getter 27.

  The heated getter 27 is supported by a jig 40 as shown in FIG. The jig 40 is provided with a recess 40a according to the thickness of the getter 27 as shown in the figure, for example, and is supported by sandwiching the outer periphery of the getter 27 with the recess 40a by moving in the horizontal direction in the figure.

  The getter 27 is transported to the upper part of the case material 12 and aligned with the opening 12b. As described above, since the getter 27 is provided with the protruding portion 27a larger than the clearance, the getter 27 is supported by the protruding portion 27a without being inserted into the outer periphery of the opening portion 12b in this state.

  Thereafter, as shown in FIG. 5B, the jig 40 is pushed down while holding the getter 27. The jig 40 is shaped so as to partially cover the upper portion of the getter 27 by the concave portion 40a, whereby the getter 27 is weighted by, for example, about 500 g.

  The protrusion 27a is bent by the load, and remains inclined with respect to the clearance between the inner diameter of the getter 27 and the opening side wall 12c. The getter 27 is fixed to the opening 12b by causing the inclined protrusion 27a to contact the opening side wall 12c.

  Since the protrusion 27a is bent by being weighted in this way, the size of the protrusion 27a and the thickness of the getter material 271 are determined in consideration of the strength and clearance of the protrusion 27a as described above.

  The protruding portion 27a may be provided on the getter 27 as shown in FIG. In this case, the protrusion 27a is caught on the upper part of the opening 12b, so that the alignment becomes easy. However, in this case, since the protruding portion 27a bends upward from the upper surface of the getter 27 due to the load, the opening side wall 12c needs to be higher than the thickness of the getter 27a.

  4th process (refer FIG.1 (C)): The process of fixing the cap material which covers a case material and an adsorbent, and seals a semiconductor element to a support substrate.

Furthermore, the cap material 14 is mounted in the same chamber, and the periphery is fixed by welding. Thereby, the internal space is maintained in a high vacuum state of about 10 ⁻³ Torr.

  6 and 7 show another embodiment of the present invention.

  FIG. 6 shows a case where the protrusion 27 a is provided on the outer periphery of the getter 27. In FIG. 6A, the protrusion 27a of the getter 27 is provided on the outer periphery, and the getter 27 is fixed to the inner periphery of the opening 12b.

  In this case, the outer periphery of the getter 27 is smaller than the opening 12b. In the drawing, the opening side wall 12c is located outside the side surface 12a of the main body. This is because, since the getter 27 is weighted and fixed, it is desirable that the bottom of the getter 27 is supported by the upper surface of the main body as shown in the figure.

  Further, as shown in FIG. 6B, the getter 27 may be fixed to the inner periphery of the opening side wall 12c with the case material 12 having the opening side wall 12c inside the main body side surface 12a. With this structure, it is possible to reduce the size of the apparatus.

  Further, FIG. 7 shows a case where the getter 27 is provided with a discontinuous portion. The discontinuous portion is, for example, a cutout portion 27b as shown in FIG. Although not shown, one end portion of the discontinuous portion may be extended and overlapped with the other end portion, and the size (diameter) of the getter 27 can be expanded by providing the discontinuous portion. Just do it. In this case, the protrusion is not necessary, and the size of the getter 27 is slightly smaller than the opening 12b.

  By applying an external force to the getter 27 and inserting it along the opening side wall 12c, the inner diameter of the getter 27 increases as shown in the perspective view of FIG. 7B, and the inner periphery of the getter 27 becomes the side wall of the opening due to the elasticity of the getter 27. 12c is contacted and fixed.

In the present embodiment, the heater heating type getter 27 has been described as an example of activation using an external heat source. However, the present invention is not limited to this, and an energization heating type getter may be employed. In other words, an electrode is attached to nichrome iron, which is the fixing plate 272 of the getter 27, and is energized for activation. With such a configuration, the getter 27 can be activated again when evacuation is performed again on a product whose degree of vacuum has deteriorated after sealing with a cap material.

4A and 4B are a plan view, a perspective view, and a cross-sectional view, illustrating a semiconductor device of the present invention. It is a schematic diagram (A)-(C) of a getter used for a semiconductor device of the present invention. It is sectional drawing explaining the manufacturing method of the semiconductor device of this invention. It is sectional drawing explaining the manufacturing method of the semiconductor device of this invention. It is sectional drawing (A)-(C) explaining the manufacturing method of the semiconductor device of this invention. It is sectional drawing (A) and (B) which show other embodiment of the semiconductor device of this invention. It is a perspective view (A) and (B) which shows other embodiments of the semiconductor device of the present invention. It is sectional drawing explaining the conventional semiconductor device. It is the top view (A) and sectional drawing (B) explaining the conventional semiconductor device. It is sectional drawing explaining the manufacturing method of the conventional semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Support substrate 12 Case material 12a Case material main body 12b Case material opening part 12c Case material opening side wall 13 Pad 14 Cap material 15 Metal fine wire 16 Semiconductor element 17 Getter 18 External terminal 19 Filler 20 Glass material 27 Getter 27a Projection Part 27b Notch part 271 Getter material 272 Fixing plate 30 Jig 40 Jig 40a Recess 51 Support substrate 52 Semiconductor element 53 Cap material 54 Adsorbent 55 Current terminal 56 Metal wire 57 External terminal

Claims (14)

A semiconductor element placed on the surface of the support substrate;
A case material placed on the support substrate so as to cover the periphery of the semiconductor element;
An adsorbent that is mounted on the case material;
A cap material that covers the case material and the adsorbent material and seals the semiconductor element;
An external terminal fixed to the support substrate and electrically connected to the semiconductor element;
The case material includes a main body that covers the semiconductor element on a side surface and an upper surface, and an opening having a side wall that is provided on the upper surface and is integrated with the upper surface.
2. The semiconductor device according to claim 1, wherein at least a part of the adsorbent is fixed by contacting a side wall of the opening. A semiconductor element placed on the surface of the support substrate;
A case material placed on the support substrate so as to cover the periphery of the semiconductor element;
An adsorbent that is superposed on the case material;
A cap material that covers the case material and the adsorbent material and seals the semiconductor element;
An external terminal fixed to the support substrate and electrically connected to the semiconductor element;
The case material includes a main body that covers the semiconductor element on a side surface and an upper surface, and an opening having a side wall that is provided on the upper surface and is integrated with the upper surface.
The adsorbent is disposed on an outer periphery or an inner periphery of the opening, and is fixed by abutting a protrusion provided on the adsorbent on a side wall of the opening.   The semiconductor device according to claim 2, wherein the protruding portion protrudes larger than a separation distance between the adsorbent and the opening side wall.   The outer periphery of the adsorbent has a size less than or equal to that of the outer periphery of the case material body, the inner periphery is slightly larger than the opening, and the protruding portion is provided on the inner periphery. A semiconductor device according to 1.   The semiconductor device according to claim 2, wherein the protruding portion of the adsorbent is bent and abuts against the side wall of the opening.   The semiconductor device according to claim 1, wherein the adsorbent is made of an alloy that adsorbs impurities in a space in which the semiconductor element is sealed. The semiconductor device according to claim 1, wherein the space sealed by the support substrate and the cap material has a pressure lower than an atmospheric pressure. The semiconductor device according to claim 1, wherein a part of the cap material above the semiconductor element is made of a material that transmits light of a predetermined wavelength. Fixing the semiconductor element to the support substrate;
Placing a case material having a main body covering the semiconductor element on a side surface and an upper surface and an opening having a side wall provided on the upper surface and integrated with the upper surface on the surface of the support substrate;
Fixing at least a part of the adsorbent by contacting the side wall of the opening;
And a step of fixing a cap material covering the case material and the adsorbent material and sealing the semiconductor element to the support substrate.   The method for manufacturing a semiconductor device according to claim 9, wherein an external force is applied to the adsorbent so that at least a part of the adsorbent is brought into contact with the side wall of the opening. Fixing the semiconductor element to the support substrate;
Placing a case material having a main body covering the semiconductor element on the side surface and the upper surface, and an opening having a side wall provided on the upper surface and integrated with the upper surface on the surface of the support substrate;
Fixing the adsorbent by bringing the protruding portion provided on the adsorbent into contact with the side wall of the opening;
And a step of fixing a cap material that covers the case material and the adsorbent material and seals the semiconductor element to the support substrate.   The semiconductor device according to claim 11, wherein after placing the adsorbent on the case material, the protrusion is brought into contact with the side wall of the opening by bending and bending the protrusion. Method.   12. The method of manufacturing a semiconductor device according to claim 9, wherein the adsorbent is fixed to the case material in an atmosphere whose pressure is lower than atmospheric pressure.   The semiconductor device according to claim 9, wherein the adsorbent is made of an alloy that adsorbs impurities in a space in which the semiconductor element is sealed.

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