JP2005217249A - Substrate equipped with land, and its manufacturing method - Google Patents

Substrate equipped with land, and its manufacturing method Download PDF

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Publication number
JP2005217249A
JP2005217249A JP2004023001A JP2004023001A JP2005217249A JP 2005217249 A JP2005217249 A JP 2005217249A JP 2004023001 A JP2004023001 A JP 2004023001A JP 2004023001 A JP2004023001 A JP 2004023001A JP 2005217249 A JP2005217249 A JP 2005217249A
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Japan
Prior art keywords
land
substrate
lands
noble metal
metal film
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JP2004023001A
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Japanese (ja)
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JP4193712B2 (en
Inventor
Yasutomi Asai
康富 浅井
Yuji Otani
祐司 大谷
Takashi Nagasaka
崇 長坂
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • H05K3/247—Finish coating of conductors by using conductive pastes, inks or powders
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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Abstract

<P>PROBLEM TO BE SOLVED: To realize a land wherein defect is further reduced in a substrate having a plurality of lands whereto a bonding wire and a fine component are connected. <P>SOLUTION: In the substrate 100 having a plurality of lands 15a, 15b, 15c whereto the bonding wire and the fine component are connected, a noble metallic film 154 which is formed by applying and setting a nano paste comprising nano order particle of a noble metal consisting of gold or the like is formed in the surface of the lands 15a, 15b, 15c. The noble metallic film 154 is formed before connection is carried out in each of the lands 15a to 15c. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、ボンディングワイヤや微細部品が接続される複数のランドを備える基板およびそのような基板の製造方法に関する。   The present invention relates to a substrate including a plurality of lands to which bonding wires and fine parts are connected, and a method for manufacturing such a substrate.

ボンディングワイヤや微細部品が接続される複数のランドを備える基板においては、基板の製造や、基板に対してさまざまな部品を実装するための長い工程が施される。ここで、微細部品とはＣＳＰ（チップサイズパッケージ）やフリップチップなどである。   In a substrate having a plurality of lands to which bonding wires and fine components are connected, a long process for manufacturing the substrate and mounting various components on the substrate is performed. Here, the fine component is a CSP (chip size package), a flip chip, or the like.

具体的には、基板製造時においては、ランド印刷、積層基板の場合は各層の積層、メッキなどの工程、実装時には、はんだ印刷、リフロー、乾燥などの工程があり、工程が長く、ランドに対してはんだ付着、汚染、ホコリの付着、酸化が生じたり、ランドかけなどの様々なランド欠陥が発生する。   Specifically, when manufacturing a board, there are processes such as land printing, in the case of a multilayer board, lamination of each layer, plating, etc., and during mounting, there are processes such as solder printing, reflow, and drying. This causes solder adhesion, contamination, dust adhesion, oxidation, and various land defects such as lands.

ここで、従来では、プラズマを基板に照射することで、ランドの表面をエッチングし、結果、酸化や薄い有機付着物などを除去する方法、いわゆるプラズマクリーニングが提案されている（たとえば、特許文献１参照）。   Here, conventionally, a method of etching the surface of the land by irradiating the substrate with plasma and, as a result, removing oxidation or thin organic deposits, so-called plasma cleaning has been proposed (for example, Patent Document 1). reference).

このものでは、グランドをクリーニングする際に、はんだ部などプラズマ照射したくない部位にプラズマが照射されないようにシールドを設けることで、グランドのみプラズマ照射することができる。
特開平７−２８３１９９号公報 In this case, when the ground is cleaned, only the ground can be irradiated with plasma by providing a shield so that plasma is not irradiated on a portion such as a solder portion where plasma irradiation is not desired.
JP-A-7-283199

しかしながら、上記したようなプラズマ処理では、ランド表面におけるごく薄い有機物の汚染、酸化のみが除去可能である。実際は、ランドの印刷かけ、めっきかけ、はんだ付着など様々な欠陥があり、プラズマクリーニングでは対応できないものが多い。   However, the plasma treatment as described above can remove only very thin organic matter contamination and oxidation on the land surface. Actually, there are various defects such as land printing, plating, and solder adhesion, and many of them cannot be handled by plasma cleaning.

また、上記プラズマクリーニングでは、プラズマ照射したくない部位にプラズマが照射されないようにシールドを設けてはいるものの、プラズマがＩＣチップなどの実装部品にダメージを与える可能性がある。   Further, in the above-described plasma cleaning, although a shield is provided so as not to irradiate plasma to a portion where plasma is not desired, there is a possibility that the plasma damages a mounted component such as an IC chip.

本発明は、上記問題に鑑み、ボンディングワイヤや微細部品が接続される複数のランドを備える基板において、欠損をより低減したランドを実現することを目的とする。   In view of the above problems, an object of the present invention is to realize a land with reduced defects in a substrate including a plurality of lands to which bonding wires and fine parts are connected.

上記目的を達成するため、請求項１に記載の発明では、ボンディングワイヤ（３０、３１）や微細部品が接続される複数のランド（１５ａ、１５ｂ、１５ｃ）を備える基板において、ランド（１５ａ、１５ｂ、１５ｃ）の表面には、貴金属のナノオーダ粒子を含むペースト状のナノペーストを塗布して硬化してなる貴金属膜（１５４）が形成されていることを特徴としている。   In order to achieve the above object, according to the first aspect of the present invention, in a substrate including a plurality of lands (15a, 15b, 15c) to which bonding wires (30, 31) and fine parts are connected, the lands (15a, 15b) 15c) is characterized in that a noble metal film (154) formed by applying and curing a paste-like nanopaste containing noble metal nano-order particles is formed.

それによれば、ランド（１５ａ、１５ｂ、１５ｃ）に欠損が発生していても、さらに貴金属膜（１５４）でそのランド（１５ａ、１５ｂ、１５ｃ）の表面が覆われるため、結果的に、ランド（１５ａ、１５ｂ、１５ｃ）は欠損の無いものにすることができる。   According to this, even if a defect occurs in the land (15a, 15b, 15c), the surface of the land (15a, 15b, 15c) is further covered with the noble metal film (154). 15a, 15b, 15c) can be free of defects.

よって本発明によれば、ボンディングワイヤ（３０、３１）や微細部品が接続される複数のランド（１５ａ、１５ｂ、１５ｃ）を備える基板において、欠損をより低減したランド（１５ａ、１５ｂ、１５ｃ）を実現することができる。   Therefore, according to the present invention, in the substrate provided with a plurality of lands (15a, 15b, 15c) to which the bonding wires (30, 31) and fine parts are connected, the lands (15a, 15b, 15c) with reduced defects are further provided. Can be realized.

ここで、請求項２に記載の発明のように、請求項１に記載のランドを備える基板において、貴金属膜（１５４）の厚さは、ランド（１５ａ、１５ｂ、１５ｃ）の種類ごとに変えられているものにできる。   Here, as in the invention described in claim 2, in the substrate including the land according to claim 1, the thickness of the noble metal film (154) can be changed for each type of land (15a, 15b, 15c). Can be what you have.

また、請求項３に記載の発明では、請求項２に記載のランドを備える基板において、複数のランド（１５ａ、１５ｂ、１５ｃ）は、金からなるボンディングワイヤ（３０）が接続される金ワイヤ接続ランド（１５ａ）とそれ以外のランド（１５ｂ、１５ｃ）からなり、それ以外のランド（１５ｂ、１５ｃ）は、金ワイヤ接続ランド（１５ａ）よりも貴金属膜（１５４）が薄いか、もしくは貴金属膜（１５４）が形成されていないものであることを特徴としている。   Further, in the invention described in claim 3, in the substrate including the land according to claim 2, the plurality of lands (15a, 15b, 15c) are gold wire connections to which bonding wires (30) made of gold are connected. The land (15a) and the other lands (15b, 15c) are composed of a noble metal film (154) thinner than the gold wire connection land (15a) or the noble metal film ( 154) is not formed.

それによれば、金ワイヤ接続ランド（１５ａ）における金ボンディングワイヤ（３０）の接続信頼性を適切に確保できるとともに、それ以外のランド（１５ｂ、１５ｃ）における接合信頼性を適切に確保できる。   According to this, the connection reliability of the gold bonding wire (30) in the gold wire connection land (15a) can be appropriately ensured, and the bonding reliability in the other lands (15b, 15c) can be appropriately ensured.

ここで、請求項４に記載の発明のように、請求項１〜請求項３に記載のランドを備える基板においては、基板は、セラミック基板であるものにできる。   Here, as in the invention described in claim 4, in the substrate provided with the land described in claims 1-3, the substrate can be a ceramic substrate.

さらに、請求項５に記載の発明のように、請求項４に記載のランドを備える基板においては、セラミック基板はアルミナからなるものにできる。   Further, as in the invention described in claim 5, in the substrate provided with the land described in claim 4, the ceramic substrate can be made of alumina.

また、請求項６に記載の発明のように、請求項４または請求項５に記載のランドを備える基板においては、ランド（１５ａ、１５ｂ、１５ｃ）において貴金属膜（１５４）の下地部分は、タングステンもしくはモリブデンからなる層（１５１）の上に銅メッキもしくはニッケルメッキからなる層（１５２）を施したものにできる。   Further, in the substrate including the land according to claim 4 or 5, as in the invention according to claim 6, the base portion of the noble metal film (154) in the land (15a, 15b, 15c) is tungsten. Alternatively, a layer (152) made of copper plating or nickel plating may be formed on the layer (151) made of molybdenum.

さらに、請求項７に記載の発明のように、請求項６に記載のランドを備える基板においては、貴金属膜（１５４）の下地部分は、銅メッキもしくはニッケルメッキからなる層（１５２）の上に、さらに金メッキからなる層（１５３）を施したものにできる。   Furthermore, as in the invention according to claim 7, in the substrate having the land according to claim 6, the base portion of the noble metal film (154) is formed on the layer (152) made of copper plating or nickel plating. Further, a layer (153) made of gold plating can be applied.

また、請求項８に記載の発明のように、請求項１〜請求項７に記載のランドを備える基板においては、貴金属は、金、銀、白金またはパラジウムであるものにできる。   Moreover, in the board | substrate provided with the land of Claims 1-7 like the invention of Claim 8, a noble metal can be made into gold, silver, platinum, or palladium.

また、請求項９に記載の発明のように、請求項１〜請求項８に記載のランドを備える基板においては、ボンディングワイヤ（３０、３１）は、金、銅またはアルミニウムからなるものにできる。   Moreover, in the board | substrate provided with the land of Claims 1-8 like the invention of Claim 9, a bonding wire (30, 31) can be made from gold | metal | money, copper, or aluminum.

請求項１０に記載の発明では、基板（１００）の表面に複数のランド（１５ａ、１５ｂ、１５ｃ）を形成した後、ランド（１５ａ、１５ｂ、１５ｃ）にボンディングワイヤ（３０、３１）や微細部品を接続してなるランドを備える基板の製造方法において、基板（１００）の表面に複数のランド（１５ａ、１５ｂ、１５ｃ）を形成した後、ランド（１５ａ、１５ｂ、１５ｃ）にボンディングワイヤ（３０、３１）や前記微細部品を接続する前に、ランド（１５ａ、１５ｂ、１５ｃ）の表面に、貴金属のナノオーダ粒子を含むペースト状のナノペーストを塗布して硬化してなる貴金属膜（１５４）を形成することを特徴としている。   In the invention described in claim 10, after a plurality of lands (15a, 15b, 15c) are formed on the surface of the substrate (100), bonding wires (30, 31) and fine parts are formed on the lands (15a, 15b, 15c). In the method of manufacturing a substrate including lands formed by connecting a plurality of lands (15a, 15b, 15c) to the surface of the substrate (100), bonding wires (30, 15b, 15c) are formed on the lands (15a, 15b, 15c). 31) and before connecting the fine parts, a noble metal film (154) is formed by applying and curing a paste-like nanopaste containing noble metal nano-order particles on the surface of the lands (15a, 15b, 15c). It is characterized by doing.

それによれば、上記請求項１に記載の基板を適切に製造することができ、その結果、欠損をより低減したランド（１５ａ、１５ｂ、１５ｃ）を実現することができる。   Accordingly, the substrate according to the first aspect can be appropriately manufactured, and as a result, the lands (15a, 15b, 15c) with reduced defects can be realized.

ここで、請求項１１に記載の発明では、請求項１０に記載のランドを備える基板の製造方法において、ランド（１５ａ、１５ｂ、１５ｃ）にボンディングワイヤ（３０、３１）や微細部品を接続する直前に、貴金属膜（１５４）の形成を行うことを特徴としている。   Here, in the invention described in claim 11, in the method of manufacturing a substrate including the land according to claim 10, immediately before the bonding wire (30, 31) or the fine component is connected to the land (15a, 15b, 15c). In addition, a noble metal film (154) is formed.

それによれば、製造工程中にランド（１５ａ〜１５ｃ）に対して異物が付着したり、汚染が生じたりすることなどを極力防止でき、好ましい。   Accordingly, it is possible to prevent foreign matter from adhering to the lands (15a to 15c) or causing contamination during the manufacturing process, which is preferable.

また、請求項１２に記載の発明では、請求項１０または請求項１１に記載のランドを備える基板の製造方法において、基板（１００）の表面に形成された複数のランド（１５ａ、１５ｂ、１５ｃ）のうちの所望のランドの表面に、選択的に貴金属膜（１５４）を形成することを特徴としている。   According to a twelfth aspect of the present invention, in the method for manufacturing a substrate including the land according to the tenth or eleventh aspect, a plurality of lands (15a, 15b, 15c) formed on the surface of the substrate (100). Of these, a noble metal film (154) is selectively formed on the surface of a desired land.

それによれば、貴金属膜（１５４）を形成する必要のないランドには、貴金属膜（１５４）が形成されないため、コストを低減できるなどの利点がある。   According to this, since the noble metal film (154) is not formed in the land where the noble metal film (154) does not need to be formed, there is an advantage that the cost can be reduced.

ここで、請求項１３に記載の発明のように、請求項１２に記載のランドを備える基板の製造方法においては、複数のランド（１５ａ、１５ｂ、１５ｃ）が、金からなるボンディングワイヤ（３０）が接続される金ワイヤ接続ランド（１５ａ）とそれ以外のランド（１５ｂ、１５ｃ）からなる場合、複数のランド（１５ａ、１５ｂ、１５ｃ）のうちの所望のランドとは、金ワイヤ接続ランド（１５ａ）であるものにできる。   Here, as in the invention of the thirteenth aspect, in the method of manufacturing a substrate having the lands according to the twelfth aspect, the plurality of lands (15a, 15b, 15c) are bonding wires (30) made of gold. Are composed of a gold wire connection land (15a) and other lands (15b, 15c), the desired land of the plurality of lands (15a, 15b, 15c) is the gold wire connection land (15a). ).

また、請求項１４に記載の発明のように、請求項１２に記載のランドを備える基板の製造方法においては、基板（１００）の表面に形成された複数のランド（１５ａ、１５ｂ、１５ｃ）を検査し、欠損が存在すると判断されたランドの表面に、選択的に貴金属膜（１５４）を形成するようにできる。   Further, as in the invention described in claim 14, in the method for manufacturing a substrate including the land according to claim 12, a plurality of lands (15a, 15b, 15c) formed on the surface of the substrate (100) are provided. A noble metal film (154) can be selectively formed on the surface of the land that has been inspected and determined to have a defect.

また、請求項１５に記載の発明では、請求項１０〜請求項１４に記載のランドを備える基板の製造方法において、ナノペースト中の前記貴金属として、金、銀、白金またはパラジウムを用いることを特徴としている。   The invention according to claim 15 is characterized in that, in the method for manufacturing a substrate having lands according to claims 10 to 14, gold, silver, platinum or palladium is used as the noble metal in the nanopaste. It is said.

なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。   In addition, the code | symbol in the bracket | parenthesis of each said means is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同一符号を付してある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

（第１実施形態）
図１は、本発明の第１実施形態に係るランドを備える基板１００の単体状態すなわち実装工程に施される前の状態の概略断面構成を示す図、図２は、この基板１００にボンディングワイヤ３０、３１を接続し、各種部品２０、２１、２２、２３を実装した状態を示す概略断面図である。 (First embodiment)
FIG. 1 is a diagram showing a schematic cross-sectional configuration of a substrate 100 including a land according to the first embodiment of the present invention, that is, a state before being subjected to a mounting process, and FIG. 31 is a schematic cross-sectional view showing a state in which various components 20, 21, 22, and 23 are mounted.

また、図３（ａ）は図１に示される基板１００における各ランド１５ａ、１５ｂ、１５ｃの拡大断面図であり、図３（ｂ）は図３に示される基板１００における各ランド１５ａ、１５ｂ、１５ｃの拡大断面図である。   3A is an enlarged sectional view of each land 15a, 15b, 15c in the substrate 100 shown in FIG. 1, and FIG. 3B is a diagram showing each land 15a, 15b, 15b in the substrate 100 shown in FIG. It is an expanded sectional view of 15c.

［基板の構成等］
基板１００は、本例では積層基板１００であり、この積層基板１００は、個々についてその表面および内部に配線層が形成された複数のセラミック層１１、１２、１３、１４、を積層して形成されたものである。 [Substrate configuration, etc.]
The substrate 100 is a laminated substrate 100 in this example, and this laminated substrate 100 is formed by laminating a plurality of ceramic layers 11, 12, 13, 14 each having a wiring layer formed on the surface and inside thereof. It is a thing.

これらセラミック層１１〜１４の積層体である積層基板１００の表面（図１中の上面）、裏面（図１中の下面）には、それぞれ表面ランド１５、裏面ランド１６が形成されており、これら表面および裏面ランド１５、１６は表層ランド１５、１６を構成している。   A front surface land 15 and a rear surface land 16 are formed on the front surface (upper surface in FIG. 1) and the rear surface (lower surface in FIG. 1) of the multilayer substrate 100 which is a laminate of the ceramic layers 11 to 14, respectively. The front and back lands 15 and 16 constitute the surface lands 15 and 16.

積層基板１００の内部には、各セラミック層に形成されたビアホール１７や各セラミック層の間に形成された内部導体層１８により、内層配線１７、１８が形成されている。そして、上記表面ランド１５と裏面ランド１６とは、内層配線１７、１８を介して電気的に接続されている。   Inner layer wirings 17 and 18 are formed inside the multilayer substrate 100 by via holes 17 formed in the ceramic layers and internal conductor layers 18 formed between the ceramic layers. The front surface land 15 and the back surface land 16 are electrically connected via inner layer wirings 17 and 18.

また、図２に示されるように、積層基板１００の表面、裏面には、各ランド１５、１６に対して各種の部品２０、２１、２２、２３やボンディングワイヤ３０、３１が接続されている。   As shown in FIG. 2, various components 20, 21, 22, 23 and bonding wires 30, 31 are connected to the lands 15, 16 on the front surface and the back surface of the multilayer substrate 100.

図２に示される例では、積層基板１００の表面側において、表面ランド１５には、はんだ４０を介してフリップチップ２０およびコンデンサ２１が接続され、また、導電性接着剤４１を介してＩＣチップ２２が接続されている。なお、フリップチップ２０と基板１００との間にはアンダーフィル材４２が充填されている。   In the example shown in FIG. 2, the flip chip 20 and the capacitor 21 are connected to the surface land 15 via the solder 40 on the surface side of the multilayer substrate 100, and the IC chip 22 is connected via the conductive adhesive 41. Is connected. An underfill material 42 is filled between the flip chip 20 and the substrate 100.

さらに、表面ランド１５には、ＩＣチップ２２から延びる金からなる金ボンディングワイヤ３０が接続されるとともに、外部との接続を行うためのアルミニウムからなるＡｌボンディングワイヤ３１が接続されている。   Furthermore, a gold bonding wire 30 made of gold extending from the IC chip 22 is connected to the surface land 15, and an Al bonding wire 31 made of aluminum for connecting to the outside is connected.

ここで、表面ランド１５のうち、金ボンディングワイヤ３０が接続されるものを金ワイヤ接続ランド１５ａ、Ａｌボンディングワイヤ３１が接続されるものをＡｌワイヤ接続ランド１５ｂ、はんだ４０を介した接続が行われるものをはんだランド１５ｃ、導電性接着剤４１を介した接続が行われるものを導電性接着剤ランド１５ｄとする。   Here, among the surface lands 15, the gold wire connection land 15 a is connected to the gold bonding wire 30, the Al wire connection land 15 b is connected to the Al bonding wire 31, and the solder 40 is connected. A thing to be connected through the solder land 15c and the conductive adhesive 41 is referred to as a conductive adhesive land 15d.

また、図２に示される例では、積層基板１００の裏面側において、裏面ランド１６には、ＬａＢ6、ＳｎＯ2、ＣｕＮｉなどからなる厚膜抵抗体２３が接続されている。そして、この厚膜抵抗体２３は、保護ガラス４３にて被覆され、さらにその上をエポキシ樹脂などからなる保護樹脂４４にて被覆されている。 In the example shown in FIG. 2, a thick film resistor 23 made of LaB 6 , SnO 2 , CuNi or the like is connected to the back surface land 16 on the back surface side of the multilayer substrate 100. The thick film resistor 23 is covered with a protective glass 43 and further covered with a protective resin 44 made of an epoxy resin or the like.

ここにおいて、本実施形態では、図３（ａ）に示されるように、実装前の積層基板１００における金ワイヤ接続ランド１５ａ、Ａｌワイヤ接続ランド１５ｂ、はんだランド１５ｃは、タングステン（Ｗ）もしくはモリブデン（Ｍｏ）からなる層１５１の上に銅メッキもしくはニッケルメッキからなるメッキ層１５２を施し、さらにその上に金メッキ層１５３を施したものである。   In this embodiment, as shown in FIG. 3A, the gold wire connection land 15a, the Al wire connection land 15b, and the solder land 15c in the multilayer substrate 100 before mounting are made of tungsten (W) or molybdenum ( A plating layer 152 made of copper plating or nickel plating is applied on the layer 151 made of Mo), and further a gold plating layer 153 is applied thereon.

本例では、図３（ａ）に示される、これら金ワイヤ接続ランド１５ａ、Ａｌワイヤ接続ランド１５ｂ、はんだランド１５ｃは、タングステン（Ｗ）層１５１の上に銅メッキ層１５２を施し、さらにその上に金メッキ層１５３を施したものである。ここで、金メッキ層１５３は、酸化防止ができる程度に薄く、たとえば０．０５μｍ形成する。   In this example, the gold wire connection land 15a, the Al wire connection land 15b, and the solder land 15c shown in FIG. 3A are obtained by applying a copper plating layer 152 on the tungsten (W) layer 151, and further thereon. Are provided with a gold plating layer 153. Here, the gold plating layer 153 is thin enough to prevent oxidation, for example, 0.05 μm.

なお、図１および図２に示される積層基板１００において、裏面ランド１６は、タングステン（Ｗ）層１５１の上に銅メッキ層１５２を施してなるものである。   In the multilayer substrate 100 shown in FIGS. 1 and 2, the back surface land 16 is formed by applying a copper plating layer 152 on the tungsten (W) layer 151.

一方、本実施形態では、図３（ｂ）に示されるように、部品実装後の積層基板１００における金ワイヤ接続ランド１５ａ、Ａｌワイヤ接続ランド１５ｂ、はんだランド１５ｃの表面には、貴金属のナノオーダ粒子を含むペースト状のナノペーストを塗布して硬化してなる貴金属膜１５４が形成されている。   On the other hand, in the present embodiment, as shown in FIG. 3B, noble metal nano-order particles are formed on the surfaces of the gold wire connection land 15a, the Al wire connection land 15b, and the solder land 15c in the multilayer substrate 100 after component mounting. A noble metal film 154 is formed by applying and curing a paste-like nanopaste containing bismuth.

この貴金属膜１５４は、一般に知られている貴金属のナノオーダ粒子を含むペースト状のナノペーストを用いたものであり、貴金属としては、金、銀、白金またはパラジウムを採用できる。本例では、金を用いている。   The noble metal film 154 uses a generally known paste-like nanopaste containing nanoorder particles of noble metal, and gold, silver, platinum or palladium can be adopted as the noble metal. In this example, gold is used.

また、ナノオーダ粒子とは、平均粒径が５００ｎｍ以下のもので、好ましくは１００ｎｍ以下のものである。そして、ナノペーストとは、このような貴金属のナノオーダ粒子が、有機バインダ、分散剤、この分散剤を捕捉する捕捉剤を混合してなるものであり、たとえば１５０℃〜３００℃程度で硬化可能なものである。   The nano-order particles have an average particle size of 500 nm or less, preferably 100 nm or less. The nanopaste is a mixture of such noble metal nano-order particles with an organic binder, a dispersant, and a trapping agent that traps the dispersant, and can be cured at about 150 ° C. to 300 ° C., for example. Is.

この貴金属膜１５４が形成された積層基板１００は、表面にランド１５ａ、１５ｂ、１５ｃが形成されている積層基板１００を形成した後、当該ランド１５ａ〜１５ｃにボンディングワイヤ３０、３１や部品を接続する前に、上記ナノペーストを塗布して硬化してなるものである。   In the laminated substrate 100 on which the noble metal film 154 is formed, after the laminated substrate 100 having the lands 15a, 15b, and 15c formed on the surface, the bonding wires 30, 31 and components are connected to the lands 15a to 15c. Before, the nanopaste is applied and cured.

ナノペーストを塗布する方法としては、インクジェット方式の印刷機で塗布する方法、あるいは、ボンディングランドの形状をしたスタンプで塗布する方法などを採用することができる。この後、１５０℃〜３００℃で１時間程度熱処理を行い、ナノペーストを硬化する。こうして、貴金属膜１５４ができあがる。   As a method of applying the nano paste, a method of applying with an ink jet printer, a method of applying with a stamp having a bonding land shape, or the like can be employed. Thereafter, heat treatment is performed at 150 ° C. to 300 ° C. for about 1 hour to cure the nanopaste. Thus, the noble metal film 154 is completed.

ここで、ナノペーストの塗布量は、硬化後の貴金属膜１５４の厚さが、０．０５μｍ以上（つまり、金メッキ層１５３と合わせた膜厚が０．１μｍ以上）になるように塗布する。望ましくは、０．２μｍ以上塗布すると、比較的ボンディング性が安定する。   Here, the nano paste is applied so that the thickness of the noble metal film 154 after curing is 0.05 μm or more (that is, the film thickness combined with the gold plating layer 153 is 0.1 μm or more). Desirably, when 0.2 μm or more is applied, the bondability is relatively stable.

このように、本実施形態によれば、図２および図３（ｂ）に示されるように、ボンディングワイヤ３０、３１や微細部品が接続される複数のランド１５ａ、１５ｂ、１５ｃを備える基板１００において、ランド１５ａ、１５ｂ、１５ｃの表面には、貴金属のナノオーダ粒子を含むペースト状のナノペーストを塗布して硬化してなる貴金属膜１５４が形成されていることを特徴とするランドを備える基板１００が提供される。   Thus, according to the present embodiment, as shown in FIGS. 2 and 3B, in the substrate 100 including the plurality of lands 15a, 15b, and 15c to which the bonding wires 30 and 31 and the fine parts are connected. A substrate 100 having lands, characterized in that a noble metal film 154 is formed on a surface of the lands 15a, 15b, 15c by applying a paste-like nanopaste containing noble metal nano-order particles and curing. Provided.

それによれば、図３（ｂ）に示されるように、ランド１５ａ、１５ｂ、１５ｃにメッキかけＫ１などの欠損が発生していても、さらに貴金属膜１５４でそのランド１５ａ、１５ｂ、１５ｃの表面が覆われるため、結果的に、ランド１５ａ、１５ｂ、１５ｃは欠損の無いものにすることができる。   According to this, as shown in FIG. 3B, even if the lands 15a, 15b, and 15c are plated and defects such as K1 are generated, the surfaces of the lands 15a, 15b, and 15c are further covered with the noble metal film 154. As a result, the lands 15a, 15b and 15c can be made free of defects.

よって、本実施形態によれば、ボンディングワイヤ３０、３１や微細部品が接続される複数のランド１５ａ、１５ｂ、１５ｃを備える基板１００において、欠損をより低減したランド１５ａ、１５ｂ、１５ｃを実現することができる。   Therefore, according to the present embodiment, in the substrate 100 including the plurality of lands 15a, 15b, and 15c to which the bonding wires 30 and 31 and the fine parts are connected, the lands 15a, 15b, and 15c with further reduced defects are realized. Can do.

［基板の製造方法等］
次に、限定するものではないが、上記図１に示される積層基板１００の製造方法および上記図２に示される実装構造の組み付け方法の一具体例について説明する。 [Substrate manufacturing method, etc.]
Next, although not limited, a specific example of the method for manufacturing the multilayer substrate 100 shown in FIG. 1 and the method for assembling the mounting structure shown in FIG. 2 will be described.

図４は、本実施形態の積層基板の製造方法および実装構造の組み付け方法の工程フローを示す図であり、図５は、図４に続く工程フローを示す図である。また、図６、図７、図８は、上記各工程における途中状態のワークを示す概略断面図である。   FIG. 4 is a diagram showing a process flow of the manufacturing method of the multilayer substrate and the assembly method of the mounting structure of the present embodiment, and FIG. 5 is a diagram showing a process flow following FIG. FIGS. 6, 7, and 8 are schematic cross-sectional views showing the workpiece in an intermediate state in each of the above steps.

まず、セラミック層１１〜１４となるアルミナなどからなる各グリーンシートを用意し、このグリーンシートの所望の位置にパンチングすることにより、最終的に上記ビアホール１７となる孔をあける。   First, each green sheet made of alumina or the like to be the ceramic layers 11 to 14 is prepared and punched to a desired position of the green sheet to finally make a hole to be the via hole 17.

次に、この孔に対して、主にモリブデンからなる導体ペーストを印刷にて充填し乾燥させる。この導体ペーストは、最終的に上記ビアホール１７における内層配線となるものである。   Next, a conductive paste mainly made of molybdenum is filled in the holes by printing and dried. This conductor paste finally becomes the inner layer wiring in the via hole 17.

次に、各グリーンシートの表面に、主にタングステンからなる導体ペーストを印刷し、乾燥させる。この導体ペーストは、上記孔に充填された導体ペーストと導通するように印刷され、最終的に、上記内部導体層１８や、表面ランド１５および裏面ランド１６のタングステン層１５１となるものである。   Next, a conductor paste mainly made of tungsten is printed on the surface of each green sheet and dried. This conductor paste is printed so as to be electrically connected to the conductor paste filled in the holes, and finally becomes the tungsten layer 151 of the inner conductor layer 18, the front surface land 15 and the back surface land 16.

このようにして加工された各グリーンシートを積層し、焼成する。具体的には、各グリーンシートを重ね合わせ、熱圧着を行い積層する。次に、この積層体を約１６００℃、還元雰囲気にて焼成する。このとき、基板は約２０％収縮する。また、各ペーストは各ランドのタングステン層１５１および内層配線１７、１８となる。こうして、図６（ａ）に示されるような積層基板ができあがる。   The green sheets thus processed are stacked and fired. Specifically, the green sheets are stacked and laminated by thermocompression bonding. Next, the laminate is fired at about 1600 ° C. in a reducing atmosphere. At this time, the substrate shrinks by about 20%. Further, each paste becomes the tungsten layer 151 and the inner layer wirings 17 and 18 of each land. In this way, a laminated substrate as shown in FIG. 6A is completed.

次に、図６（ｂ）に示されるように、上記表面ランド１５（１５ａ、１５ｂ、１５ｃ、１５ｄ）および裏面ランド１６となるタングステン層１５１の表面に、無電解メッキまたは電気メッキなどにより、銅メッキ層１５２を形成する。   Next, as shown in FIG. 6B, the surface of the tungsten layer 151 to be the front surface land 15 (15a, 15b, 15c, 15d) and the back surface land 16 is subjected to copper plating by electroless plating or electroplating. A plating layer 152 is formed.

次に、積層基板の裏面に、厚膜抵抗体２３を構成するペーストを印刷し、乾燥・焼成することにより、厚膜抵抗体２３を形成する。そして、その上に保護ガラス４３を形成し、その上に保護樹脂４４を形成する。また、必要に応じて保護ガラス４３を形成した後、抵抗値の調整のため、レーザトリミングを行ったりする。   Next, the thick film resistor 23 is formed by printing the paste which comprises the thick film resistor 23 on the back surface of a multilayer substrate, and drying and baking. Then, a protective glass 43 is formed thereon, and a protective resin 44 is formed thereon. Moreover, after forming the protective glass 43 as needed, laser trimming is performed for adjusting the resistance value.

続いて、銅メッキ層１５２の表面に、無電解メッキまたは電気メッキなどにより、金メッキ層１５３（図３参照）を形成する。こうして、図６（ｃ）に示されるように、積層基板１００が形成される。   Subsequently, a gold plating layer 153 (see FIG. 3) is formed on the surface of the copper plating layer 152 by electroless plating or electroplating. Thus, as shown in FIG. 6C, the laminated substrate 100 is formed.

この図６（ｃ）に示される積層基板１００は、すなわち上記図１に示される実装前の積層基板１００である。つまり、上記図３（ａ）に示される金メッキ層１５３まで形成された各表面ランド１５ａ、１５ｂ、１５ｃを有する積層基板１００が形成される。   The laminated substrate 100 shown in FIG. 6C is the laminated substrate 100 before mounting shown in FIG. That is, the laminated substrate 100 having the surface lands 15a, 15b, and 15c formed up to the gold plating layer 153 shown in FIG.

このようにして製造された実装前の積層基板１００を受け入れて、部品やボンディングワイヤの実装工程が行われる。   The laminated substrate 100 before mounting manufactured as described above is received, and a mounting process of components and bonding wires is performed.

まず、はんだランド１５ｃの表面に、上記したインクジェット方式の印刷機で塗布する方法、あるいは、スタンプで塗布する方法により、選択的に上記ナノペーストを塗布し、これを硬化させる。それにより、上記図３（ｂ）に示されるように、表面に貴金属膜１５４が形成されたはんだランド１５ｃが形成される。   First, the nano paste is selectively applied to the surface of the solder land 15c by the above-described ink jet printer or the method of applying with a stamp, and is cured. Thereby, as shown in FIG. 3B, a solder land 15c having a noble metal film 154 formed on the surface is formed.

続いて、図７（ａ）に示されるように、はんだランド１５ｃの表面にはんだペースト４０ａを印刷して塗布する。   Subsequently, as shown in FIG. 7A, the solder paste 40a is printed and applied to the surface of the solder land 15c.

次に、図７（ｂ）に示されるように、部品マウントを行う。ここでは、はんだ付けされる部品であるフリップチップ２０およびコンデンサ２１を積層基板１００の表面に搭載する。   Next, as shown in FIG. 7B, component mounting is performed. Here, the flip chip 20 and the capacitor 21 which are components to be soldered are mounted on the surface of the multilayer substrate 100.

続いて、はんだリフローを行い、フリップチップ２０およびコンデンサ２１をはんだ４０を介して積層基板１００に接続する。その後、基板洗浄を行い、フラックスを洗浄し、除去する。   Subsequently, solder reflow is performed, and the flip chip 20 and the capacitor 21 are connected to the multilayer substrate 100 via the solder 40. Thereafter, the substrate is cleaned, and the flux is cleaned and removed.

次に、図７（ｃ）に示されるように、導電性接着剤ランド１５ｄの表面に、導電性接着剤４１を塗布する。   Next, as shown in FIG. 7C, a conductive adhesive 41 is applied to the surface of the conductive adhesive land 15d.

続いて、図８（ａ）に示されるように、ＩＣマウント工程では、導電性接着剤ランド１５ｄの上に、導電性接着剤４１を介してＩＣチップ２２を搭載する。そして、導電性接着剤４１を硬化することにより、ＩＣチップ２２を導電性接着剤４１を介して積層基板１００に接続する。   Subsequently, as shown in FIG. 8A, in the IC mounting process, the IC chip 22 is mounted on the conductive adhesive land 15 d via the conductive adhesive 41. Then, the IC chip 22 is connected to the laminated substrate 100 through the conductive adhesive 41 by curing the conductive adhesive 41.

次に、金ワイヤ接続ランド１５ａの表面に、上記したインクジェット方式の印刷機で塗布する方法、あるいは、スタンプで塗布する方法により、選択的に上記ナノペーストを塗布し、これを硬化させる。それにより、上記図３（ｂ）に示されるように、表面に貴金属膜１５４が形成された金ワイヤ接続ランド１５ａが形成される。   Next, the nano paste is selectively applied on the surface of the gold wire connection land 15a by the above-described ink jet printer or the method of applying with a stamp, and is cured. Thereby, as shown in FIG. 3B, the gold wire connection land 15a having the noble metal film 154 formed on the surface is formed.

続いて、図８（ｂ）に示されるように、金ボンディング工程を行い、金ボンディングワイヤ３０によって、ＩＣチップ２２と金ワイヤ接続ランド１５ａとを結線し、電気的に接続する。   Subsequently, as shown in FIG. 8B, a gold bonding step is performed, and the IC chip 22 and the gold wire connection land 15 a are connected and electrically connected by the gold bonding wire 30.

その後、図８（ｃ）に示されるように、フリップチップ２０と基板１００との間にアンダーフィル材４２を注入して硬化する。これにより、アンダーフィル材４２の充填がなされる。なお、このアンダーフィル材４２の充填は必要に応じて行えばよく、行わなくてもよい。   Thereafter, as shown in FIG. 8C, an underfill material 42 is injected between the flip chip 20 and the substrate 100 and cured. Thereby, the underfill material 42 is filled. The underfill material 42 may be filled as necessary or not.

次に、Ａｌワイヤ接続ランド１５ｂの表面に、上記したインクジェット方式の印刷機で塗布する方法、あるいは、スタンプで塗布する方法により、選択的に上記ナノペーストを塗布し、これを硬化させる。それにより、上記図３（ｂ）に示されるように、表面に貴金属膜１５４が形成されたＡｌワイヤ接続ランド１５ｂが形成される。   Next, the nano paste is selectively applied on the surface of the Al wire connection land 15b by the above-described ink jet printer or by the stamp, and is cured. Thereby, as shown in FIG. 3B, an Al wire connection land 15b having a noble metal film 154 formed on the surface is formed.

続いて、Ａｌボンディング工程を行い、Ａｌボンディングワイヤ３１によって、コネクタ部材などの外部とＡｌワイヤ接続ランド１５ｂとを結線する。これにより、積層基板１００と外部とがＡｌボンディングワイヤ３１を介して電気的に接続され、上記図２に示される実装構造ができあがる。   Subsequently, an Al bonding step is performed, and the outside of the connector member or the like and the Al wire connection land 15 b are connected by the Al bonding wire 31. As a result, the multilayer substrate 100 and the outside are electrically connected via the Al bonding wires 31, and the mounting structure shown in FIG. 2 is completed.

このように、本製造方法によれば、基板１００の表面に複数のランド１５ａ、１５ｂ、１５ｃを形成した後、ランド１５ａ、１５ｂ、１５ｃにボンディングワイヤ３０、３１や微細部品を接続してなるランドを備える基板の製造方法において、基板（１００の表面に複数のランド１５ａ、１５ｂ、１５ｃを形成した後、ランド１５ａ、１５ｂ、１５ｃにボンディングワイヤ３０、３１や微細部品を接続する前に、ランド１５ａ、１５ｂ、１５ｃの表面に、貴金属のナノオーダ粒子を含むペースト状のナノペーストを塗布して硬化してなる貴金属膜１５４を形成することを特徴とするランドを備える基板の製造方法が提供される。   As described above, according to this manufacturing method, after a plurality of lands 15a, 15b, and 15c are formed on the surface of the substrate 100, the bonding wires 30, 31 and fine parts are connected to the lands 15a, 15b, and 15c. In the method of manufacturing a substrate comprising: a substrate (the land 15a after forming a plurality of lands 15a, 15b, 15c on the surface of the substrate 100 and before connecting the bonding wires 30, 31 and fine parts to the lands 15a, 15b, 15c) , 15b, and 15c, a noble metal film 154 formed by applying a paste-like nanopaste containing noble metal nano-order particles and curing is provided.

それによれば、上記図２および図３（ｂ）に示される本実施形態の基板１００を適切に製造することができ、欠損をより低減したランド１５ａ、１５ｂ、１５ｃを実現することができる。   According to this, the substrate 100 of this embodiment shown in FIG. 2 and FIG. 3B can be appropriately manufactured, and the lands 15a, 15b, and 15c with reduced defects can be realized.

なお、本実施形態では、図３（ｂ）に示されるように、部品実装後の積層基板１００における金ワイヤ接続ランド１５ａ、Ａｌワイヤ接続ランド１５ｂ、はんだランド１５ｃの表面に、貴金属膜１５４が形成されている。   In this embodiment, as shown in FIG. 3B, a noble metal film 154 is formed on the surfaces of the gold wire connection land 15a, the Al wire connection land 15b, and the solder land 15c in the laminated substrate 100 after component mounting. Has been.

ここにおいて、これら金ワイヤ接続ランド１５ａ、Ａｌワイヤ接続ランド１５ｂ、はんだランド１５ｃの表面に、貴金属膜１５４を形成する場合、上記図４に示されるフロー図において、はんだペースト塗布工程の前に行うナノペースト塗布工程にて、各ランド１５ａ〜１５ｃに一括して貴金属膜１５４を形成してもよい。   Here, when the noble metal film 154 is formed on the surfaces of the gold wire connection land 15a, the Al wire connection land 15b, and the solder land 15c, in the flow chart shown in FIG. In the paste application process, the noble metal film 154 may be formed collectively on the lands 15a to 15c.

あるいは、金ワイヤ接続ランド１５ａ、Ａｌワイヤ接続ランド１５ｂの表面に、貴金属膜１５４を形成するにあたって、上記図５に示されるフロー図において、導電性接着剤硬化工程とＡｕボンディング工程との間に行われるナノペースト塗布工程にて、これら両ランド１５ａ、１５ｂに同時に貴金属膜１５４を形成してもよい。   Alternatively, when the noble metal film 154 is formed on the surfaces of the gold wire connection land 15a and the Al wire connection land 15b, in the flowchart shown in FIG. 5, the process is performed between the conductive adhesive curing step and the Au bonding step. In the nano paste application process, the noble metal film 154 may be simultaneously formed on both the lands 15a and 15b.

しかし、上記製造方法に示したように、各ランド１５ａ、１５ｂ、１５ｃについてボンディングワイヤ３０、３１や部品２０、２１を接続する直前に、貴金属膜１５４の形成を行うことが好ましい。   However, as shown in the manufacturing method, it is preferable to form the noble metal film 154 immediately before connecting the bonding wires 30 and 31 and the components 20 and 21 to the lands 15a, 15b, and 15c.

それによれば、製造工程中にランド１５ａ〜１５ｃに対して異物が付着したり、汚染が生じたりすることなどを極力防止できるためである。   According to this, it is possible to prevent foreign matters from adhering to the lands 15a to 15c or causing contamination during the manufacturing process as much as possible.

（第２実施形態）
図９は、本発明の第２実施形態に係る基板１００の要部を示す概略断面図であり、（ａ）は図１に示されるような実装前の基板１００における本実施形態の各ランド１５ａ、１５ｂ、１５ｃの拡大断面図、（ｂ）および（ｃ）は図３に示されるような実装後の基板１００における本実施形態の各ランド１５ａ、１５ｂ、１５ｃの拡大断面図である。 (Second Embodiment)
FIG. 9 is a schematic cross-sectional view showing the main part of the substrate 100 according to the second embodiment of the present invention. FIG. 9A shows each land 15a of the present embodiment on the substrate 100 before mounting as shown in FIG. 15b, 15c are enlarged sectional views of the lands 15a, 15b, 15c of the present embodiment on the substrate 100 after mounting as shown in FIG.

本実施形態は、貴金属膜１５４の厚さが、ランド１５ａ、１５ｂ、１５ｃの種類ごとに変えられていることを特徴とする基板１００を提供するものである。上記第１実施形態との相違点を中心に述べる。   The present embodiment provides a substrate 100 characterized in that the thickness of the noble metal film 154 is changed for each type of lands 15a, 15b, and 15c. The difference from the first embodiment will be mainly described.

具体的には、基板１００表面の複数のランド１５ａ、１５ｂ、１５ｃが、金ボンディングワイヤ３０が接続される金ワイヤ接続ランド１５ａとそれ以外のランド１５ｂ、１５ｃからなる場合、図３（ｂ）に示されるように、それ以外のＡｌワイヤ接続ランド１５ｂおよびはんだランド１５ｃは、金ワイヤ接続ランド１５ａよりも貴金属膜１５４が薄いものとする。   Specifically, when the plurality of lands 15a, 15b, and 15c on the surface of the substrate 100 are composed of the gold wire connection land 15a to which the gold bonding wire 30 is connected and the other lands 15b and 15c, FIG. As shown in the figure, the Al wire connection land 15b and the solder land 15c other than that have a noble metal film 154 thinner than the gold wire connection land 15a.

もしくは、図３（ｃ）に示されるように、それ以外のＡｌワイヤ接続ランド１５ｂおよびはんだランド１５ｃは、貴金属膜１５４が形成されていないものとする。   Alternatively, as shown in FIG. 3C, the noble metal film 154 is not formed on the other Al wire connection lands 15b and the solder lands 15c.

Ａｌワイヤ接続ランド１５ｂの表面には、ナノペーストを塗布しても良いが、塗布しない、あるいは、薄く塗布することが、信頼性上望ましい。これは、本例において、貴金属膜１５４を構成するＡｕとＡｌボンディングワイヤ３１を構成するＡｌとの接触部に、電位差による腐食が置きやすいからである。   Nanopaste may be applied to the surface of the Al wire connection land 15b, but it is desirable not to apply or to apply thinly in view of reliability. This is because in this example, corrosion due to a potential difference is easily placed at the contact portion between Au constituting the noble metal film 154 and Al constituting the Al bonding wire 31.

このことから、Ａｌワイヤ接続ランド１５ｂにおいては、金からなる貴金属膜１５４と金メッキ層１５３との合計の厚さ、すなわち金の層厚さを０．６μｍ以下にする必要がある。望ましくは、この金の層厚さは０．４μｍ以下もしくは０であることが好ましい。   For this reason, in the Al wire connection land 15b, the total thickness of the noble metal film 154 made of gold and the gold plating layer 153, that is, the gold layer thickness needs to be 0.6 μm or less. Desirably, the gold layer thickness is preferably 0.4 μm or less or 0.

また、フリップチップ２０やコンデンサ２１などのはんだ付けが行われるはんだランド１５ｃにおいては、一般に、はんだ４０中のＳｎが、Ａｕとの拡散を起こしやすく、この拡散により生成する合金層が脆いため、接合寿命が悪くなる恐れがある。   In addition, in the solder land 15c to which the flip chip 20 or the capacitor 21 is soldered, Sn in the solder 40 is likely to diffuse with Au, and the alloy layer generated by this diffusion is brittle. There is a risk that the service life will deteriorate.

よって、はんだ付けのためのはんだランド１５ｃも、Ａｌワイヤ接続ランド１５ｂと同様に、金の層厚さを薄くするか、０とすることが好ましい。   Therefore, it is preferable that the solder land 15c for soldering also has a gold layer thickness reduced to 0 as in the case of the Al wire connection land 15b.

図９（ｂ）に示されるように、この貴金属膜１５４の厚さを各ランド１５ａ、１５ｂ、１５ｃごとに変えることは、ナノペーストの塗布量を変化させることにより容易に行うことができる。   As shown in FIG. 9B, changing the thickness of the noble metal film 154 for each of the lands 15a, 15b, and 15c can be easily performed by changing the coating amount of the nano paste.

また、図９（ｃ）に示されるように、金ワイヤ接続ランド１５ａ以外のＡｌワイヤ接続ランド１５ｂおよびはんだランド１５ｃに、貴金属膜１５４が形成されていないものとする場合、基板１００の表面に形成された各ランド１５ａ、１５ｂ、１５ｃのうちの所望のランドすなわち金ワイヤ接続ランド１５ａの表面に、選択的に貴金属膜１５４を形成する方法を採用すればよい。   Further, as shown in FIG. 9C, when the noble metal film 154 is not formed on the Al wire connection land 15b and the solder land 15c other than the gold wire connection land 15a, it is formed on the surface of the substrate 100. A method of selectively forming a noble metal film 154 on a desired land among the lands 15a, 15b, 15c, that is, a surface of the gold wire connection land 15a may be employed.

このことは、インクジェット方式の印刷機で塗布する方法などにおいて、選択的な塗布が可能であることから、容易に実現できる。   This can be easily realized because selective coating is possible in a method of coating with an ink jet printer.

たとえば、はんだランド１５ｃに貴金属膜１５４を付けない場合は、上記図５に示されるフロー図において、基板受け入れ工程とはんだペースト塗布工程との間のナノペースト塗布工程は行わないようにすればよい。   For example, when the noble metal film 154 is not attached to the solder land 15c, the nano paste application process between the substrate receiving process and the solder paste application process may not be performed in the flowchart shown in FIG.

また、Ａｌワイヤ接続ランド１５ｂに貴金属膜１５４を付けない場合は、上記図５に示されるフロー図において、アンダーフィル注入・硬化工程とＡｌボンディング工程との間のナノペースト塗布工程は行わないようにすればよい。   Further, when the noble metal film 154 is not attached to the Al wire connection land 15b, the nano paste application process between the underfill injection / curing process and the Al bonding process is not performed in the flow chart shown in FIG. do it.

（第３実施形態）
図１０は、本発明の第３実施形態に係る基板１００の要部を示す概略断面図であり、（ａ）は図１に示されるような実装前の基板１００における本実施形態の各ランド１５ａ、１５ｂ、１５ｃの拡大断面図、（ｂ）、（ｃ）および（ｄ）は図３に示されるような実装後の基板１００における本実施形態の各ランド１５ａ、１５ｂ、１５ｃの拡大断面図である。 (Third embodiment)
FIG. 10 is a schematic cross-sectional view showing the main part of the substrate 100 according to the third embodiment of the present invention. FIG. 10A shows each land 15a of the present embodiment on the substrate 100 before mounting as shown in FIG. , 15b, 15c are enlarged sectional views, (b), (c) and (d) are enlarged sectional views of the lands 15a, 15b, 15c of the present embodiment on the substrate 100 after mounting as shown in FIG. is there.

本実施形態は、上記実施形態における基板１００の表面ランド１５において、金メッキ層１５３を形成しないものである。   In the present embodiment, the gold plating layer 153 is not formed on the surface land 15 of the substrate 100 in the above embodiment.

つまり、図１０に示されるように、本実施形態の各ランド１５ａ〜１５ｃは、タングステンもしくはモリブデンからなる層１５１の上に銅メッキもしくはニッケルメッキからなる層１５２の２層からなり、この層１５２の上に貴金属膜１５４が形成されている。   That is, as shown in FIG. 10, each land 15 a to 15 c of this embodiment is composed of two layers of a layer 152 made of copper or nickel on a layer 151 made of tungsten or molybdenum. A noble metal film 154 is formed thereon.

この場合、Ａｕメッキ層１５３を形成しないため、各パッド１５ａ〜１５ｃにおける金の層厚さは、ナノペーストの塗布量のみで制御される。この場合の金の層厚さの好ましい範囲は、上記実施形態と同様である。   In this case, since the Au plating layer 153 is not formed, the gold layer thickness in each of the pads 15a to 15c is controlled only by the amount of nano paste applied. In this case, the preferable range of the gold layer thickness is the same as in the above embodiment.

図１０（ｂ）では、貴金属膜１５４の厚さが、ランド１５ａ、１５ｂ、１５ｃの種類ごとに同一である場合を示しており、たとえば０．２５μｍとすることができる。   FIG. 10B shows a case where the thickness of the noble metal film 154 is the same for each type of the lands 15a, 15b, and 15c, and can be set to, for example, 0.25 μm.

図１０（ｃ）では、金ワイヤ接続ランド１５ａ以外のＡｌワイヤ接続ランド１５ｂおよびはんだランド１５ｃは、金ワイヤ接続ランド１５ａよりも貴金属膜１５４が薄いものとしている。たとえば、貴金属膜１５４の厚さは、金ワイヤ接続ランド１５ａでは０．４μｍ、それ以外のランド１５ｂ、１５ｃでは０．２５μｍとすることができる。   In FIG. 10C, the Al wire connection land 15b and the solder land 15c other than the gold wire connection land 15a have a noble metal film 154 thinner than the gold wire connection land 15a. For example, the thickness of the noble metal film 154 can be set to 0.4 μm for the gold wire connection land 15a and 0.25 μm for the other lands 15b and 15c.

おり、図１０（ｄ）では、金ワイヤ接続ランド１５ａ以外のＡｌワイヤ接続ランド１５ｂおよびはんだランド１５ｃは、貴金属膜１５４が形成されていないものとしている。たとえば、貴金属膜１５４の厚さは、金ワイヤ接続ランド１５ａでは０．４μｍとすることができる。   In FIG. 10D, it is assumed that the noble metal film 154 is not formed on the Al wire connection land 15b and the solder land 15c other than the gold wire connection land 15a. For example, the thickness of the noble metal film 154 can be set to 0.4 μm in the gold wire connection land 15a.

なお、本実施形態の製造工程においては、上記図４に示される金メッキ工程は無くなることは明らかである。   It is obvious that the gold plating step shown in FIG. 4 is eliminated in the manufacturing process of the present embodiment.

（第４実施形態）
図１１は、本発明の第４実施形態に係る基板１００の要部を示す概略断面図であり、（ａ）は基板１００における本実施形態の接続直前の各ランド１５ａ、１５ｂ、１５ｃの拡大断面図、（ｂ）は図３に示されるような実装後の基板１００における本実施形態の各ランド１５ａ、１５ｂ、１５ｃの拡大断面図である。 (Fourth embodiment)
FIG. 11 is a schematic cross-sectional view showing the main part of the substrate 100 according to the fourth embodiment of the present invention. FIG. 11A is an enlarged cross-sectional view of each land 15a, 15b, 15c immediately before connection of the present embodiment on the substrate 100. FIG. 4B is an enlarged sectional view of each land 15a, 15b, 15c of the present embodiment on the substrate 100 after mounting as shown in FIG.

本実施形態は、上記第２実施形態と同様に、基板１００の表面に形成された各ランド１５ａ、１５ｂ、１５ｃのうちの所望のランドすなわち金ワイヤ接続ランド１５ａの表面に、選択的に貴金属膜１５４を形成する方法を採用するものである。   In the present embodiment, similarly to the second embodiment, a noble metal film is selectively formed on a desired land among the lands 15a, 15b, and 15c formed on the surface of the substrate 100, that is, on the surface of the gold wire connection land 15a. The method of forming 154 is adopted.

特に、本実施形態では、基板１００の表面に形成された複数のランド１５ａ、１５ｂ、１５ｃを検査し、欠損が存在すると判断されたランドの表面に、選択的に貴金属膜１５４を形成する。この検査は、たとえば、各ランド１５ａ〜１５ｃにおける接続の直前に行うようにする。   In particular, in the present embodiment, the plurality of lands 15a, 15b, and 15c formed on the surface of the substrate 100 are inspected, and the noble metal film 154 is selectively formed on the surface of the land that is determined to have a defect. For example, this inspection is performed immediately before connection in each of the lands 15a to 15c.

そのため、本実施形態では、金ワイヤ接続ランド１５ａにおいて、貴金属膜１５４が形成されないランドも存在するため、金ボンディングワイヤ３０との接続性を確保すべく、金メッキ層１５３の厚さだけで、０、１μｍ以上を確保するようにする。望ましくは、０．２５μｍ以上とする。   Therefore, in the present embodiment, since there are lands in which the noble metal film 154 is not formed in the gold wire connection land 15a, the thickness of the gold plating layer 153 is set to 0, in order to ensure the connectivity with the gold bonding wire 30. 1 μm or more should be secured. Desirably, it is 0.25 μm or more.

そして、部品２０〜２２の実装の直前あるいはワイヤ３０、３１のボンディングの直前に、各ランド１５ａ〜１５ｃが汚染、変色、かけなどの欠陥があるかどうかを外観検査を行い、欠陥がある場合に、そのランドのみナノペーストを塗布し、その後硬化、ボンディングを実施する。   Then, immediately before the mounting of the components 20 to 22 or just before the bonding of the wires 30 and 31, the lands 15a to 15c are inspected for defects such as contamination, discoloration, and overburden. The nano paste is applied only to the land, followed by curing and bonding.

たとえば、図１１に示される例では、接続前の状態において、Ａｌワイヤ接続ランド１５ｂとはんだランド１５ｃに、メッキかけＫ１やメッキしみＫ２が存在する。そのため、これらＡｌワイヤ接続ランド１５ｂとはんだランド１５ｃぼ表面に、貴金属膜１５４を選択的に形成している。   For example, in the example shown in FIG. 11, there are plating K1 and plating spots K2 on the Al wire connection land 15b and the solder land 15c in the state before connection. Therefore, a noble metal film 154 is selectively formed on the surfaces of the Al wire connection land 15b and the solder land 15c.

ここで、ランド表面の外観検査は、自動認識機にて行っても良い。この際、メッキかけ、印刷かけ、変色、異物付着など、欠陥の色が様々であるため、たとえば、色の異なる複数の光源により、各々、２値化し、欠陥を認識することができる。   Here, the land surface appearance inspection may be performed by an automatic recognizer. At this time, since the color of the defect is various, such as plating, printing, discoloration, adhesion of foreign matter, etc., for example, it is possible to binarize and recognize the defect using a plurality of light sources having different colors.

そして、自動認識機により欠損があると認識したランドにのみ、インクジェット方式の印刷機でナノペーストを塗布する。あるいは、ランドの形状をしたスタンプでナノペーストを塗布する。   Then, the nano paste is applied only to the land recognized as having a defect by the automatic recognition machine by the ink jet printing machine. Alternatively, the nanopaste is applied with a land-shaped stamp.

このように、基板１００の表面に形成された複数のランド１５ａ、１５ｂ、１５ｃのうちの所望のランドの表面に、選択的に貴金属膜１５４を形成することにより、貴金属膜１５４を形成する必要のないランドには、貴金属膜１５４が形成されないため、コストを低減できるなどの利点がある。   As described above, the noble metal film 154 needs to be formed by selectively forming the noble metal film 154 on the surface of a desired land among the plurality of lands 15a, 15b, and 15c formed on the surface of the substrate 100. Since no noble metal film 154 is not formed on the land where there is no land, there is an advantage that the cost can be reduced.

なお、上記実施形態において、貴金属膜１５４は、ナノペーストを焼結して形成されるため、メタライズのパターン欠けなどの下地に金属がない部分でも、貴金属膜１５４は形成することが可能である。ちなみに、無電解メッキであれば、下地に金属が必要なため、メタライズのパターン欠けの補修は不可能である。   In the above embodiment, since the noble metal film 154 is formed by sintering nano paste, the noble metal film 154 can be formed even in a portion where there is no metal in the base such as a metallized pattern chip. Incidentally, in the case of electroless plating, it is impossible to repair a metallized pattern chip because a metal is required for the base.

また、上記実施形態では、セラミック積層基板を用いることで、本発明を適切に採用することができているが、本発明に用いる基板としては、プリント基板などの基板であってもよい。   Moreover, in the said embodiment, although this invention can be employ | adopted appropriately by using a ceramic laminated substrate, substrates, such as a printed circuit board, may be sufficient as a board | substrate used for this invention.

以上述べてきたように、本発明によれば、接続する前に、貴金属ナノペーストを塗布、硬化することで、ランドを形成する、あるいは、ランドの欠損部分に貴金属ナノペーストを塗布、硬化することで、ランドを補修することができる。以上により、欠陥のないランドに接続が行える。   As described above, according to the present invention, before connection, the land is formed by applying and curing the noble metal nano paste, or the noble metal nano paste is applied and cured to the defective portion of the land. With this, the land can be repaired. As described above, connection can be made to a land having no defect.

本発明の第１実施形態に係るランドを備える基板の概略断面構成を示す図である。It is a figure which shows schematic sectional structure of a board | substrate provided with the land which concerns on 1st Embodiment of this invention. 図１に示される基板にボンディングワイヤを接続し各種部品を実装した状態を示す概略断面図である。It is a schematic sectional drawing which shows the state which connected the bonding wire to the board | substrate shown by FIG. 1, and mounted various components. （ａ）は図１に示される基板における各ランドの拡大断面図であり、（ｂ）は図３に示される基板における各ランドの拡大断面図である。(A) is an expanded sectional view of each land in the board | substrate shown by FIG. 1, (b) is an expanded sectional view of each land in the board | substrate shown by FIG. 上記第１実施形態の積層基板の製造方法および実装構造の組み付け方法の工程フローを示す図である。It is a figure which shows the process flow of the manufacturing method of the laminated substrate of the said 1st Embodiment, and the assembly method of a mounting structure. 図４に続く工程フローを示す図である。It is a figure which shows the process flow following FIG. 上記第１実施形態の積層基板の製造方法および実装構造の組み付け方法の各工程における途中状態のワークを示す概略断面図である。It is a schematic sectional drawing which shows the workpiece | work of the intermediate state in each process of the manufacturing method of the laminated substrate of the said 1st Embodiment, and the assembly method of a mounting structure. 図６に続く各工程における途中状態のワークを示す概略断面図である。It is a schematic sectional drawing which shows the workpiece | work in the middle state in each process following FIG. 図７に続く各工程における途中状態のワークを示す概略断面図である。It is a schematic sectional drawing which shows the workpiece | work in the middle state in each process following FIG. 本発明の第２実施形態に係る基板の要部を示す概略断面図である。It is a schematic sectional drawing which shows the principal part of the board | substrate which concerns on 2nd Embodiment of this invention. 本発明の第３実施形態に係る基板の要部を示す概略断面図である。It is a schematic sectional drawing which shows the principal part of the board | substrate which concerns on 3rd Embodiment of this invention. 本発明の第４実施形態に係る基板の要部を示す概略断面図である。It is a schematic sectional drawing which shows the principal part of the board | substrate which concerns on 4th Embodiment of this invention.

符号の説明Explanation of symbols

１５ａ…金ワイヤ接続ランド、１５ｂ…Ａｌワイヤ接続ランド、
１５ｃ…はんだランド、３０…金ボンディングワイヤ、
３１…Ａｌボンディングワイヤ、１００…基板としての積層基板、
１５１…タングステンもしくはモリブデンからなる層としてのタングステン層、
１５２…銅メッキもしくはニッケルメッキからなるメッキ層としての銅メッキ層、
１５３…金メッキ層、１５４…貴金属膜。 15a ... gold wire connection land, 15b ... Al wire connection land,
15c ... solder land, 30 ... gold bonding wire,
31 ... Al bonding wire, 100 ... Laminated substrate as substrate,
151 ... Tungsten layer as a layer made of tungsten or molybdenum,
152 ... a copper plating layer as a plating layer made of copper plating or nickel plating,
153: Gold plating layer, 154: Noble metal film.

Claims (15)

ボンディングワイヤ（３０、３１）や微細部品が接続される複数のランド（１５ａ、１５ｂ、１５ｃ）を備える基板において、
前記ランド（１５ａ、１５ｂ、１５ｃ）の表面には、貴金属のナノオーダ粒子を含むペースト状のナノペーストを塗布して硬化してなる貴金属膜（１５４）が形成されていることを特徴とするランドを備える基板。 In a substrate provided with a plurality of lands (15a, 15b, 15c) to which bonding wires (30, 31) and fine parts are connected,
On the surface of the land (15a, 15b, 15c), a noble metal film (154) formed by applying a paste-like nanopaste containing noble metal nano-order particles and curing is formed. Substrate provided. 前記貴金属膜（１５４）の厚さは、前記ランド（１５ａ、１５ｂ、１５ｃ）の種類ごとに変えられていることを特徴とする請求項１に記載のランドを備える基板。 The substrate having a land according to claim 1, wherein the thickness of the noble metal film (154) is changed for each type of the land (15a, 15b, 15c). 前記複数のランド（１５ａ、１５ｂ、１５ｃ）は、金からなるボンディングワイヤ（３０）が接続される金ワイヤ接続ランド（１５ａ）とそれ以外のランド（１５ｂ、１５ｃ）からなり、
前記それ以外のランド（１５ｂ、１５ｃ）は、前記金ワイヤ接続ランド（１５ａ）よりも前記貴金属膜（１５４）が薄いか、もしくは前記貴金属膜（１５４）が形成されていないものであることを特徴とする請求項２に記載のランドを備える基板。 The lands (15a, 15b, 15c) include a gold wire connection land (15a) to which a bonding wire (30) made of gold is connected and other lands (15b, 15c),
The other lands (15b, 15c) are characterized in that the noble metal film (154) is thinner than the gold wire connection land (15a) or the noble metal film (154) is not formed. A substrate comprising the land according to claim 2. 前記基板は、セラミック基板であることを特徴とする請求項１ないし３のいずれか１つに記載のランドを備える基板。 The substrate having a land according to any one of claims 1 to 3, wherein the substrate is a ceramic substrate. 前記セラミック基板はアルミナからなることを特徴とする請求項４に記載のランドを備える基板。 5. The substrate having lands according to claim 4, wherein the ceramic substrate is made of alumina. 前記ランド（１５ａ、１５ｂ、１５ｃ）において前記貴金属膜（１５４）の下地部分は、タングステンもしくはモリブデンからなる層（１５１）の上に銅メッキもしくはニッケルメッキからなる層（１５２）を施したものであることを特徴とする請求項４または５に記載のランドを備える基板。 In the land (15a, 15b, 15c), the base portion of the noble metal film (154) is obtained by applying a layer (152) made of copper plating or nickel plating on a layer (151) made of tungsten or molybdenum. The board | substrate provided with the land of Claim 4 or 5 characterized by the above-mentioned. 前記貴金属膜（１５４）の下地部分は、前記銅メッキもしくはニッケルメッキからなる層（１５２）の上に、さらに金メッキからなる層（１５３）を施したものであることを特徴とする請求項６に記載のランドを備える基板。 The base portion of the noble metal film (154) is obtained by further forming a layer (153) made of gold plating on the layer (152) made of copper plating or nickel plating. A substrate comprising the described land. 前記貴金属は、金、銀、白金またはパラジウムであることを特徴とする請求項１ないし７のいずれか１つに記載のランドを備える基板。 The substrate having a land according to claim 1, wherein the noble metal is gold, silver, platinum, or palladium. 前記ボンディングワイヤ（３０、３１）は、金、銅またはアルミニウムからなるものであることを特徴とする請求項１ないし８のいずれか１つに記載のランドを備える基板。 9. The substrate with lands according to claim 1, wherein the bonding wires (30, 31) are made of gold, copper or aluminum. 基板（１００）の表面に複数のランド（１５ａ、１５ｂ、１５ｃ）を形成した後、前記ランド（１５ａ、１５ｂ、１５ｃ）にボンディングワイヤ（３０、３１）や微細部品を接続してなるランドを備える基板の製造方法において、
前記基板（１００）の表面に前記複数のランド（１５ａ、１５ｂ、１５ｃ）を形成した後、前記ランド（１５ａ、１５ｂ、１５ｃ）に前記ボンディングワイヤ（３０、３１）や前記微細部品を接続する前に、
前記ランド（１５ａ、１５ｂ、１５ｃ）の表面に、貴金属のナノオーダ粒子を含むペースト状のナノペーストを塗布して硬化してなる貴金属膜（１５４）を形成することを特徴とするランドを備える基板の製造方法。 A plurality of lands (15a, 15b, 15c) are formed on the surface of the substrate (100), and then the lands (15a, 15b, 15c) are connected to bonding wires (30, 31) and fine parts. In the method for manufacturing a substrate,
After the plurality of lands (15a, 15b, 15c) are formed on the surface of the substrate (100), before the bonding wires (30, 31) and the fine parts are connected to the lands (15a, 15b, 15c). In addition,
A noble metal film (154) formed by applying a paste-like nanopaste containing noble metal nano-order particles to a surface of the land (15a, 15b, 15c) to form a noble metal film (154). Production method. 前記ランド（１５ａ、１５ｂ、１５ｃ）に前記ボンディングワイヤ（３０、３１）や微細部品を接続する直前に、前記貴金属膜（１５４）の形成を行うことを特徴とする請求項１０に記載のランドを備える基板の製造方法。 The land according to claim 10, wherein the noble metal film (154) is formed immediately before connecting the bonding wires (30, 31) and fine parts to the lands (15a, 15b, 15c). A method for manufacturing a substrate. 前記基板（１００）の表面に形成された前記複数のランド（１５ａ、１５ｂ、１５ｃ）のうちの所望のランドの表面に、選択的に前記貴金属膜（１５４）を形成することを特徴とする請求項１０または１１に記載のランドを備える基板の製造方法。 The noble metal film (154) is selectively formed on a surface of a desired land among the plurality of lands (15a, 15b, 15c) formed on the surface of the substrate (100). Item 12. A method for producing a substrate comprising the land according to Item 10 or 11. 前記複数のランド（１５ａ、１５ｂ、１５ｃ）は、金からなるボンディングワイヤ（３０）が接続される金ワイヤ接続ランド（１５ａ）とそれ以外のランド（１５ｂ、１５ｃ）からなり、
前記複数のランド（１５ａ、１５ｂ、１５ｃ）のうちの所望のランドとは、前記金ワイヤ接続ランド（１５ａ）であることを特徴とする請求項１２に記載のランドを備える基板の製造方法。 The lands (15a, 15b, 15c) include a gold wire connection land (15a) to which a bonding wire (30) made of gold is connected and other lands (15b, 15c),
13. The method for manufacturing a substrate having lands according to claim 12, wherein a desired land of the plurality of lands (15a, 15b, 15c) is the gold wire connection land (15a). 前記基板（１００）の表面に形成された前記複数のランド（１５ａ、１５ｂ、１５ｃ）を検査し、欠損が存在すると判断されたランドの表面に、選択的に前記貴金属膜（１５４）を形成することを特徴とする請求項１２に記載のランドを備える基板の製造方法。 The plurality of lands (15a, 15b, 15c) formed on the surface of the substrate (100) are inspected, and the noble metal film (154) is selectively formed on the surface of the land determined to have a defect. A method for manufacturing a substrate comprising the land according to claim 12. 前記ナノペースト中の前記貴金属として、金、銀、白金またはパラジウムを用いることを特徴とする請求項１０ないし１４のいずれか１つに記載のランドを備える基板の製造方法。
The method for manufacturing a substrate having a land according to any one of claims 10 to 14, wherein gold, silver, platinum, or palladium is used as the noble metal in the nano paste.
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