JP2005216913A - Bonding tool and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the deviation of a lead from a terminal as much as possible at a bonding time, and to reduce the dirts of four corners of a bonding tool and its periphery as much as possible at the bonding time. <P>SOLUTION: The bonding tool 10 having a pushing part 63 which has a tip pressing surface 12 made of a hard substance for packaging a semiconductor element 20, includes a chamfered part 14 at least at the corner of the end of the output terminal 24 of the semiconductor element 20 of the tip pressing surface 12. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a bonding tool used as a crimping tool when a semiconductor element such as an IC or LSI is mounted on a substrate or the like, and a semiconductor device bonded by the bonding tool.

  In order to extract the electrical characteristics of a semiconductor device mounted with a semiconductor element, as shown in FIG. 37, a terminal 53 which is an electrode formed on the semiconductor element 52 and a wiring 51 of the package are electrically connected. There is a need.

  Conventionally, such connection has been performed by a bonding method in which a thin metal wire made of gold, copper, or the like is used as a conductive wire (bonding wire) and is connected one by one using a tool called a capillary.

  Further, recently, as shown in FIG. 33 which is a plan view of FIG. 32 and a view taken along the line AA shown in FIG. 32, a film 50 obtained by plating tin or gold on a patterned copper foil is shown. A bonding tool in which a wiring 51 patterned on the film 50 and a terminal 53 of a semiconductor element 52 such as an LSI are heated to a predetermined temperature (for example, about 300 to 400 ° C.) is used. Wireless bonding that uses, presses, and connects together has become mainstream (for example, Patent Documents 1 to 4 below). As the material of the film 50, polyimide is often used, and as the material of the terminal 53, gold is often used.

  As shown in a perspective view of FIG. 34, the bonding tool 60 is provided with a substantially cylindrical mounting portion 61, a joint portion 62 connected to the tip of the mounting portion 61, and a tip of the joint portion 62. The pressing part 63 is provided. And the press part 63 is provided with the front-end | tip press surface 64 at the front-end | tip.

  When performing wireless bonding, as shown in FIG. 35, the film 50 is attached to the semiconductor element 52 by the heated tip pressing surface 64 in a state where each wiring 51 on the film 50 is aligned with the corresponding terminal 53. By pressing, the plurality of wirings 51 patterned on the film 50 are connected so as to be arranged at the centers of the corresponding terminals 53 respectively.

  At the time of bonding, the film 50 is formed so that each wiring 51 on the film 50 does not come into contact with the semiconductor element 52 and short-circuit with the GND potential.

  However, when the wiring 51 and the terminal 53 are bonded using such a bonding tool 60, the difference in expansion due to heat from the tip pressing surface 64 is caused by the difference in thermal expansion coefficient between the film 50 and the semiconductor element 52. Arise. That is, since the thermal expansion coefficient of the film 50 in which polyimide is usually used is larger than the thermal expansion coefficient of the semiconductor element 52, the wiring 51 is aligned with the center of the terminal 53 before bonding as shown in FIG. Deviation from the state. The amount of deviation increases as the amount of heat received from the tip pressing surface 64 increases. Further, since both the film 50 and the semiconductor element 52 expand as a whole at the time of expansion, the amount of deviation increases as it goes to the corner even if it is not so large on the center side.

Conventionally, in order to cope with such a deviation, a deviation amount generated when the wiring 51 is bonded to each terminal 53 is predicted in advance from past results, an empirical formula, and the like. The gaps between adjacent wirings 51 are manufactured in advance so that 51 is arranged at the center of the corresponding terminal 53.
JP-A-9-69544 Japanese Patent Laid-Open No. 11-16953 Japanese Patent Laid-Open No. 11-307580 JP 2000-68334 A

  However, the amount of expansion during bonding increases as it goes to the corners of the film 50 and the semiconductor element 52, as shown in FIG. Therefore, in order to arrange each wiring 51 at the center of the corresponding terminal 53 at the time of bonding, the wiring 51 is arranged so that the distance between the adjacent wirings 51 becomes smaller toward the corner. There is a problem that the manufacturing is complicated.

Further, a carrier tape made of a film 50 using a polyimide resin plated with tin or gold on a patterned copper foil is used, and a wiring 51 patterned on the film 50 and a terminal 53 of a semiconductor element 52 such as an LSI. Are pressed to a predetermined pressure (for example, 5 to 50 g / mm ² ; total contact area) using a bonding tool 60 heated to a predetermined temperature (for example, about 300 to 400 ° C.), and the film 50 is further subjected to forming. Therefore, the film 50 is directly pressed at the four corners of the bonding tool 60 and locations around it, and is heated and pressed. For this reason, when the four corners and the peripheral part of the bonding tool 60 are soiled with polyimide and bonding is performed continuously, the four corners and the peripheral part of the tip pressing surface 64 of the bonding tool 60 are covered with the carbonized residue of polyimide, Deterioration of conductivity and deterioration of heat uniformity, bonding is not possible, a predetermined bonding strength cannot be obtained, or it is necessary to increase the maintenance frequency of the bonding tool 60 in order to maintain bonding quality, resulting in a decrease in production efficiency. There is a problem such as.

  On the other hand, there is a problem that indentations are formed on the film 50 bonded by the bonding tool 60 in which the four corners and the peripheral portion thereof are stained with polyimide, resulting in poor appearance and a decrease in manufacturing yield.

  The present invention has been made in view of such circumstances, and a first object of the present invention is to provide a bonding tool capable of reducing the displacement between a wiring and a terminal during bonding as much as possible.

  A second object of the present invention is to provide a bonding tool capable of reducing the contamination of the four corners of the bonding tool and the periphery thereof as much as possible during bonding.

  A third object of the present invention is to provide a semiconductor device in which no pressure scar is formed on the bonded surface side by bonding with such a bonding tool.

  In order to achieve the above object, the present invention takes the following measures.

  That is, the invention according to claim 1 is a bonding tool for mounting a semiconductor element including a pressing portion having a tip pressing surface made of a hard material. Of the tip pressing surface, at least a corner portion on the output terminal side of the semiconductor element. Chamfering.

  Therefore, in the bonding tool according to the first aspect of the present invention, by taking the above-described means, the amount of heat transferred to the semiconductor element and the film at the time of bonding can be reduced particularly at the corners. As a result, the thermal expansion at the corners of the semiconductor element and the film can be alleviated, so that the deviation between the wiring and the terminal during bonding can be reduced as much as possible.

  Also, if dirt adheres to the four corners and the periphery of the bonding tool, the thermal conductivity decreases, bonding cannot be performed, the prescribed bonding strength cannot be obtained, or the bonding tool maintenance frequency is maintained to maintain bonding quality. While there is a decrease in performance, such as a reduction in production efficiency, the film bonded with the bonding tool having the four corners and the periphery thereof in this way is indented, resulting in poor appearance and reduced manufacturing yield. To do. However, since the bonding tool of the present invention can reduce the contamination of the four corners of the bonding tool and the periphery thereof at the time of bonding by taking the above-described means, the performance deterioration and the manufacturing yield as described above can be reduced. It is possible to suppress the decrease.

  According to a second aspect of the present invention, in the bonding tool according to the first aspect of the invention, the terminal and the wiring are bonded by pressing the wiring against the terminal provided in the semiconductor element while the tip pressing surface is heated.

  Therefore, in the bonding tool according to the second aspect of the present invention, by taking the above-described means, the amount of heat transferred to the semiconductor element and the film at the time of bonding can be reduced particularly at the corners. As a result, the thermal expansion at the corners of the semiconductor element and the film can be alleviated, so that the wiring and the terminal can be bonded while minimizing the deviation between the wiring and the terminal during bonding.

  Further, as in the first aspect of the invention, during the bonding, the dirt at the four corners and the periphery of the bonding tool can be reduced, so that it is possible to suppress the performance deterioration and the manufacturing yield reduction as described above. Become.

  A third aspect of the present invention is a bonding tool for mounting a semiconductor element, comprising a plurality of partial tip pressing surfaces and a pressing force transmission surface. The pressing portion is provided with a plurality of tip pressing surfaces for bonding the terminal and the wiring by pressing the wiring on the terminal provided on the plane of the semiconductor element in a heated state. Then, at least the corners on the output terminal side of the semiconductor element are chamfered among the tip pressing surfaces.

  Therefore, in the bonding tool of the invention of claim 3, by taking the above-described means, the deviation between the wiring and the terminal at the time of bonding can be reduced as much as possible as in the inventions of claim 1 and claim 2. However, it is possible to bond the wiring and the terminal. At this time, since it is possible to pressurize only the wiring corresponding to the terminal area, it is possible to prevent the wiring from coming into contact with a portion where there is no terminal and preventing a short circuit or the generation of bubbles during potting. .

  Further, as in the first aspect of the invention, during the bonding, the dirt at the four corners and the periphery of the bonding tool can be reduced, so that it is possible to suppress the performance deterioration and the manufacturing yield reduction as described above. Become.

  According to a fourth aspect of the present invention, in the bonding tool according to the third aspect of the present invention, the plurality of tip pressing surfaces are arranged in a direction parallel to each other or in a direction orthogonal to each other.

  According to a fifth aspect of the present invention, in the bonding tool of the fourth aspect of the invention, the tip pressing surfaces are arranged in the pressing portion so as to form a plurality of concentric rectangular shapes by arranging the plurality of tip pressing surfaces.

  According to a sixth aspect of the present invention, in the bonding tool according to the third aspect of the present invention, the plurality of front end pressing surfaces are two and are arranged in the pressing portion so as to be parallel to each other.

  A seventh aspect of the present invention is the bonding tool according to any one of the first to sixth aspects, wherein the chamfered surface of the pressing portion is orthogonal to the tip pressing surface.

  According to an eighth aspect of the present invention, in the bonding tool according to any one of the first to sixth aspects, an area of a cross section parallel to the front end pressing surface in the pressing portion is minimized on the front end pressing surface.

  According to a ninth aspect of the present invention, in the bonding tool according to the seventh or eighth aspect of the present invention, the chamfered portion of the tip pressing surface has a curved shape.

  According to a tenth aspect of the present invention, in the bonding tool according to the seventh or eighth aspect, the chamfered portion of the tip pressing surface has a polygonal shape.

  In the bonding tool of the inventions according to the fourth to tenth aspects, the same effects as the bonding tool of the invention of the third aspect can be obtained.

  According to an eleventh aspect of the present invention, in the bonding tool according to any one of the first to tenth aspects, a ridge line portion corresponding to a terminal on the outermost peripheral side of the semiconductor element is chamfered in the tip pressing surface.

  Therefore, in the bonding tool according to the eleventh aspect of the present invention, by taking the above-described means, it is possible to reduce the displacement between the wiring and the terminal at the time of bonding as much as possible, and to reduce the impact applied to the semiconductor element at the time of bonding. It becomes possible.

  Further, as in the first aspect of the invention, during the bonding, the dirt at the four corners and the periphery of the bonding tool can be reduced, so that it is possible to suppress the performance deterioration and the manufacturing yield reduction as described above. Become.

  According to a twelfth aspect of the present invention, there is provided a semiconductor device comprising: a printed wiring board on which a wiring made of a conductive material formed on a bendable organic layer is disposed; and a semiconductor element having a terminal bonded to the wiring. Then, when the wiring and the terminal are bonded using the bonding tool according to any one of claims 1 to 11, a pressure contact mark of the bonding tool is formed on a surface contacting the tip pressing surface of the printed wiring board. This is a semiconductor device which is bonded without being attached.

  Therefore, in the bonding tool according to the twelfth aspect of the present invention, by using the bonding tool according to any one of the first to eleventh aspects, a pressure contact mark is formed on the surface of the printed wiring board that comes into contact with the front pressing surface. A semiconductor device that does not occur can be provided.

  ADVANTAGE OF THE INVENTION According to this invention, the bonding tool which can reduce the shift | offset | difference of the wiring and terminal at the time of bonding as much as possible is realizable.

  In addition, it is possible to realize a bonding tool that can reduce the contamination of the four corners of the bonding tool and the periphery thereof as much as possible during bonding.

  Furthermore, by using such a bonding tool, it is possible to realize a semiconductor device in which no pressure contact mark is formed on the bonded surface side.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  In addition, the code | symbol in the figure used for description of each following embodiment attaches | subjects and shows the same code | symbol about the same part as FIG. 32 thru | or FIG.

(First embodiment)
A first embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 is a perspective view showing an example of a bonding tool according to the first embodiment.

  That is, the bonding tool 10 according to the present embodiment is different from the bonding tool 60 shown in FIG. 34 in the shape of the tip pressing surface 12 of the pressing portion 63. The tip pressing surface 12 of the bonding tool 10 according to the present embodiment includes a chamfered portion 14 with chamfered corners. As shown in the plan view of FIG. 2, the chamfered portion 14 does not reach the position of the terminal 22. This reduces the amount of heat input from the tip pressing surface 12 to the film 50 and the semiconductor element 20 at the time of bonding without causing any trouble in the bonding between the wiring 51 and the terminal 22, and in particular, greatly increases the heat input amount at the corners. To be able to reduce it.

  Although the semiconductor element 20 includes an input terminal 22 (#b) and an output terminal 22 (#a) as terminals 22, the output terminal 22 (#a) is generally more than the input terminal 22 (#b). a lot. For this reason, the input terminal 22 (#b) may be manufactured with a predetermined gap between the adjacent wirings 51 as in the prior art without much difficulty. The chamfered portions 14 are preferably provided at all four corners of the tip pressing surface 12, but considering such circumstances, as shown in the plan view of FIG. 3, at least the output terminal 22 (#a) side is provided. Just do it.

  FIG. 4 is a perspective view showing an example of the pressing portion 63 having such a tip pressing surface 12. FIG. 4 shows an example in which the chamfered portion 14 is provided so as to be orthogonal to the distal end pressing surface 12 and over the entire length H of the pressing portion 63, but the bonding tool 10 according to the present embodiment is It is not limited to such a configuration. For example, as shown in the perspective view of FIG. 5, the chamfered portion 14 may be sufficiently provided at a portion in contact with the tip pressing surface 12, and the degree of chamfering may be reduced as the distance from the tip pressing surface 12 increases. Further, as shown in the perspective view of FIG. 6, the chamfered portion 14 may be configured by a plurality of surfaces. Furthermore, the chamfered portion 14 only needs to be provided at least in a portion in contact with the tip pressing surface 12, and a perspective view of the pressing portion 63 shown in FIG. 7 and an elevation view of the pressing portion 63 shown in FIG. Thus, it may be partial with respect to the depth H direction of the pressing part 63. 8B is an elevation view of the pressing portion 63 provided with the chamfered portion 14 over the entire length of the pressing portion 63 in the depth H direction, and FIG. 8A is a chamfered portion 14 for comparison. The elevation view of the press part 63 by the prior art which does not provide is shown, respectively.

  Further, the boundary B between the tip pressing surface 12 and the chamfered portion 14 may be a ridge line as shown in FIGS. 4 to 6, or may be a C chamfer as shown in FIGS. 9 to 11. That is, as shown in FIG. 12 in which the vicinity of the boundary B is enlarged, the boundary B does not have a corner and has a curvature radius R.

  Further, the outer periphery of the tip pressing surface 12 and the part b other than the boundary B may also be formed of corners as shown in FIG. As shown in 13 (b), it may have a radius of curvature r.

  By using such a tip pressing surface 12 in a heated state, as shown in FIG. 1, each wiring 51 provided on the film 50 is pressed against the corresponding terminal 22 of the semiconductor element 20 and bonded.

  Next, the operation of the bonding tool according to the present embodiment configured as described above will be described.

  When the wiring 51 provided on the film 50 is bonded to the terminal 22 of the semiconductor element 20 by the bonding tool 10 according to the present embodiment, each wiring 51 corresponds to each of the semiconductor elements 20 as shown in FIG. After being aligned so as to be correctly arranged at the position of the terminal 22 to be pressed, it is pressed by the heated tip pressing surface 12.

  In the bonding tool 10 according to the present embodiment, since the chamfered portion 14 is provided on the tip pressing surface 12, the total heat input from the tip pressing surface 12 to the film 50 and the semiconductor element 20 during pressing is reduced. At the same time, the amount of heat input at the corners, which are parts of the film 50 and the semiconductor element 20 that particularly face the chamfered portion 14, is suppressed.

  Thereby, the thermal expansion of the film 50 and the semiconductor element 20 at the time of bonding is suppressed, and as a result, the deviation between the wiring 51 and the terminal 22 is reduced as much as possible. Further, in particular, conventionally, this deviation during bonding has become larger as it goes to the corner rather than the center side, but in the bonding tool 10 according to the present embodiment, it faces the corner of the tip pressing surface 12. By providing the chamfered portion 14 at the site, the amount of heat input to the corner is particularly greatly reduced, so that the displacement between the wiring 51 and the terminal 22 during bonding is extremely effectively reduced.

  Further, in the bonding tool 10 according to the present embodiment, since the chamfered portion 14 is provided on the tip pressing surface 12, adhesion of dirt due to carbon debris of polyimide at the four corners and the peripheral portion of the bonding tool 10 is reduced. The As a result, the thermal conductivity is lowered and bonding cannot be performed, the predetermined bonding strength cannot be obtained, or the maintenance frequency of the bonding tool 10 needs to be increased in order to maintain the bonding quality, and the production efficiency is lowered. Reduction is suppressed.

  On the other hand, indentation is formed on the film 50 bonded by the bonding tool having the four corners and the peripheral portions thereof dirty, and the appearance is deteriorated and the manufacturing yield is reduced. However, the bonding tool 10 according to the present embodiment has the four corners and the peripheral portions thereof. Since the contamination of the part is reduced, such a decrease in manufacturing yield is also reduced.

  As described above, in the bonding tool according to the present embodiment, when the film 50 and the semiconductor element 20 are bonded by the operation as described above, the amount of heat applied to the film 50 and the semiconductor element 20 is reduced particularly at the corners. Can be reduced. As a result, thermal expansion of the film 50 and the semiconductor element 20 at the time of bonding can be suppressed, and the deviation between the wiring 51 and the terminal 22 at the time of bonding can be effectively reduced.

  Furthermore, when the film 50 and the semiconductor element 20 are bonded using a conventional bonding tool, as shown in the plan view of FIG. 14A, depending on the impact at the time of pressing by the tip pressing surface 12 or the forming after bonding. In some cases, the film 50 positioned on the semiconductor element 20 along the ridge line with the portion b of the tip pressing surface 12 may have minute scratches K (pressure contact marks) and linear scratches L (pressure contact marks). FIG. 14B is an elevation view corresponding to FIG. FIG. 14 (a) is a diagram created based on a photograph of the bonded state according to the prior art, and the arrow shown in FIG. 14 (b) is a photograph based on FIG. 14 (a). The shooting direction of shooting is shown. However, as shown in FIG. 13 (b), it is possible to prevent the generation of this scratch K (pressure contact mark) and linear scratch L (pressure contact mark) by chamfering the portion b on the tip pressing surface 12. it can.

  Further, in the bonding tool 10 according to the present embodiment, since the chamfered portion 14 is provided on the tip pressing surface 12, the adhesion of dirt due to carbon debris of polyimide at the four corners and the peripheral portion of the bonding tool 10 is reduced. be able to. As a result, the thermal conductivity is lowered and bonding cannot be performed, the predetermined bonding strength cannot be obtained, or the maintenance frequency of the bonding tool 10 needs to be increased in order to maintain the bonding quality, and the production efficiency is lowered. Can be suppressed. Furthermore, appearance defects can be reduced, and a reduction in manufacturing yield can be reduced.

(Second Embodiment)
A second embodiment of the present invention will be described with reference to FIGS.

  FIG. 15 is a perspective view showing an example of the bonding tool according to the present embodiment. The same parts as those in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted. Only different parts will be described here.

  That is, the bonding tool 11 according to the present embodiment is different only in that the pressing portion 63 of the bonding tool 10 shown in FIG. That is, the tip pressing surface 12 has a flat face shape, and has a minimum width W necessary for bonding the wiring 51 to the terminal 22 as shown in FIG. Further, the tip pressing surface 12 includes a chamfered portion 14 as in the first embodiment. At the time of bonding, the heated tip pressing surface 12 presses the film 50 against the semiconductor element 20 in a state where each wiring 51 on the film 50 is fitted to the corresponding terminal 22, thereby corresponding each wiring 51. Bonding is performed so that each terminal 22 is arranged at the center.

  In addition to being able to achieve the same operational effects as the first embodiment by adopting a configuration including such a partial tip pressing surface 12 as if a plurality of tip pressing surfaces are arranged, The following effects can be achieved.

  That is, at the time of bonding, only the wiring 51 corresponding to the width W of the tip pressing surface 12 is partially pressurized. For this reason, the extension and distortion of the film 50 in the region where the terminals 22 are not present during bonding and the sinking of the leading end of the wiring 51 are prevented.

  If the film 50 is stretched or distorted as described above, when the sealing resin 17 is injected at the time of potting, the fluidity of the resin deteriorates. As a result, as shown in FIG. There is a possibility that the durability of the semiconductor device in which the film 50 is bonded to the semiconductor element 20 is lowered. However, in the present embodiment, since such extension and distortion of the film 50 can be prevented, a semiconductor device without the in-resin bubbles 18 can be manufactured as shown in FIG.

  Further, when the sinking of the tip end portion of the wiring 51 is large, the sinking portion P of the wiring 51 may come into contact with the surface of the semiconductor element 20 as shown in FIG. However, in the present embodiment, as shown in FIG. 20, since the sinking of the portion corresponding to the sinking portion P of the wiring 51 can be prevented, the semiconductor device having a low possibility of occurrence of a short circuit. Can be manufactured. As described above, it is possible to reduce the occurrence of defective semiconductor devices and improve the bonding quality.

  In addition, the shape and arrangement of the tip pressing surface 12 in the bonding tool 11 according to the present embodiment that exhibits the above-described effects are not limited to those shown in FIG. 15, but the semiconductor element 20 to be bonded. Various patterns can be taken according to the shape and the arrangement condition of the terminals 22. Further, the shape and size of the chamfered portion 14 can take various patterns as described in the first embodiment.

  FIG. 21 shows an example of the tip pressing surface 12 having a cross-section in cross section. FIG. 21 (a) is a plan view, and FIG. 21 (b) is an EE line shown in FIG. 21 (a). FIG.

  FIG. 22 shows an example in which a pair of partial tip pressing surfaces 12 ′ are further arranged to face each other in addition to the pattern shown in FIG. 21. FIG. 22 (a) is a plan view, FIG. FIG. 22B is a sectional view taken along line FF shown in FIG. Such a bonding tool is effective for a semiconductor element in which terminals are arranged in two rows.

  Examples of other possible patterns are shown in FIGS. 23 to 31 each show a square cross section and a corresponding rectangular cross section. FIG. 23A is the same as that shown in FIG. In the examples shown in FIGS. 21 to 31, the shape of the chamfered portion 14 of the tip pressing surface 12 is the same, but the shape of the chamfered portion 14 is the same as described in the first embodiment. It goes without saying that it is not limited.

  The best mode for carrying out the present invention has been described above with reference to the accompanying drawings, but the present invention is not limited to such a configuration. Within the scope of the invented technical idea of the claims, those skilled in the art will be able to conceive various changes and modifications, and these changes and modifications are also within the technical scope of the present invention. It is understood that it belongs to.

The perspective view which shows an example of the bonding tool which concerns on the 1st Embodiment of this invention. The top view for demonstrating the state at the time of bonding. The top view which shows an example of a front-end | tip press surface. The perspective view which shows the modification of a press part. The perspective view which shows the modification of a press part. The perspective view which shows the modification of a press part. The perspective view which shows the modification of a press part. The elevation view which shows the modification of a press part. The perspective view which shows the modification of a press part. The perspective view which shows the modification of a press part. The perspective view which shows the modification of a press part. The enlarged view in the boundary vicinity of a front-end | tip press surface and a chamfer part. The enlarged view which shows the outer periphery of a front-end | tip press surface, Comprising: The shape of the site | parts other than the boundary of a front-end | tip press surface and a chamfer part. The top view and elevation which show the state of the semiconductor element with a crack | wound (pressure welding trace) at the time of bonding. The perspective view which shows an example of the bonding tool which concerns on the 2nd Embodiment of this invention. The elevation view which shows the positional relationship of a front-end | tip press surface and a terminal. The elevation view which shows an example of the product which the bubble generate | occur | produced in sealing resin. The elevation view which shows an example of the product into which sealing resin was inject | poured. The elevation which shows an example of the state which the front-end | tip part of wiring contacted the surface of the semiconductor element. The elevation view which shows an example of the state which the front-end | tip part of wiring is not contacting the surface of a semiconductor element. The top view and sectional drawing which show the example of arrangement | positioning of a front-end | tip press surface. The top view and sectional drawing which show the example of arrangement | positioning of a front-end | tip press surface. The top view which shows the example of arrangement | positioning of a front-end | tip press surface. The top view which shows the example of arrangement | positioning of a front-end | tip press surface. The top view which shows the example of arrangement | positioning of a front-end | tip press surface. The top view which shows the example of arrangement | positioning of a front-end | tip press surface. The top view which shows the example of arrangement | positioning of a front-end | tip press surface. The top view which shows the example of arrangement | positioning of a front-end | tip press surface. The top view which shows the example of arrangement | positioning of a front-end | tip press surface. The top view which shows the example of arrangement | positioning of a front-end | tip press surface. The top view which shows the example of arrangement | positioning of a front-end | tip press surface. The top view for demonstrating the state at the time of bonding in a prior art. The figure seen along the AA line shown in FIG. The perspective view of the bonding tool in a prior art. The elevation view for demonstrating the state at the time of bonding in a prior art. The top view for demonstrating the shift | offset | difference at the time of bonding in a prior art. The perspective view which shows the general structure of the semiconductor device by which a terminal and wiring are bonded.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10, 11, 60 ... Bonding tool, 12, 64 ... Tip pressing surface, 14 ... Chamfered part, 17 ... Sealing resin, 18 ... In-resin bubble, 20, 52 ... Semiconductor element, 22 ... Terminal, 22 (#a) ... Output terminal, 22 (#b) ... Input terminal, 50 ... Film, 51 ... Wiring, 53 ... Terminal, 61 ... Mounting part, 62 ... Junction part, 63 ... Pressing part

Claims (12)

In a bonding tool for mounting a semiconductor element having a pressing portion having a tip pressing surface made of a hard substance,
A bonding tool that chamfers at least a corner of the semiconductor element on the output terminal side of the tip pressing surface. The bonding tool according to claim 1,
A bonding tool for bonding the terminal and the wiring by pressing the wiring against the terminal provided in the semiconductor element while the tip pressing surface is heated. In bonding tool for semiconductor device mounting,
In a heated state, the terminal provided on the plane of the semiconductor element includes a pressing portion in which a plurality of tip pressing surfaces for bonding the terminal and the wiring by pressing the wiring are arranged,
A bonding tool that chamfers at least a corner portion on the output terminal side of the semiconductor element among the tip pressing surfaces. The bonding tool according to claim 3,
A bonding tool in which the plurality of tip pressing surfaces are arranged in a direction parallel to each other or in a direction orthogonal to each other. The bonding tool according to claim 4,
A bonding tool in which each of the tip pressing surfaces is arranged in the pressing portion so as to form a plurality of concentric rectangular shapes by arranging the plurality of tip pressing surfaces. The bonding tool according to claim 3,
The bonding tool in which the plurality of tip pressing surfaces are arranged at the pressing portion so as to be parallel to each other. The bonding tool according to any one of claims 1 to 6,
The bonding tool which made the said chamfered surface in the said press part orthogonal to the said front-end | tip press surface. The bonding tool according to any one of claims 1 to 6,
The bonding tool which made the area of the cross section parallel to the said front end press surface in the said press part the smallest in the said front end press surface. In the bonding tool according to claim 7 or claim 8,
A bonding tool in which the chamfered portion of the tip pressing surface has a curved surface shape. In the bonding tool according to claim 7 or claim 8,
A bonding tool in which the chamfered portion of the tip pressing surface has a polygonal shape. In the bonding tool according to any one of claims 1 to 10,
The bonding tool which chamfers the ridgeline part corresponding to the terminal of the outermost periphery side of the said semiconductor element among the said front end pressing surfaces. In a semiconductor device comprising a printed wiring board in which a wiring made of a conductive material formed on a bendable organic layer is disposed, and a semiconductor element having a terminal bonded to the wiring,
When the wiring and the terminal are bonded using the bonding tool according to any one of claims 1 to 11, the surface of the printed wiring board in contact with the tip pressing surface of the bonding tool. A semiconductor device that can be bonded without any pressure marks.

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